13007 NPN Epitaxial Silicon Transistor

TO-220

HIGH VOLTAGE SWITCH MODE APPLICATION

Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=80W

Absolute Maximum Ratings (TA=25oC)

Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 700 400 9 8 80 150 -55~+150 Unit V V V A W
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C C 1. Base 2. Collector 3. Emitter

Electrical Characteristics (TA=25oC)

Characteristic Collector-Emitter Breakdown Voltage Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Symbol BVCEO IEBO hFE(1) hFE(2) VCE(sat1) VCE(sat2) VCE(sat3) Base-emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time VBE(sat1) VBE(sat2) COB fT tON tSTG Test Conditions IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A IC=2A, IB=0.4A IC=5A, IB=1A IC=8A, IB=2A IC=2A, IB=0.4A IC=5A, IB=1A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=5A 1B1=-1B2=1A RL=50[ 4 1.6 3 0.7 110 8 5 Min 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz S S S Typ Max Unit V mA

Fall Time tf * Pulse Test : PW < 300g s, Duty cycles < 2%

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