BC548 / BC548A / BC548B / BC548C

BC548 BC548A BC548B BC548C

TO-92
C

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

Absolute Maximum Ratings*

Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
30 30 5.0 500 -55 to +150

Units
V V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
BC548 / A / B / C 625 5.0 83.3 200

Units
mW mW/C C/W C/W

1997 Fairchild Semiconductor Corporation

548-ABC, Rev B

BC548 / BC548A / BC548B / BC548C

NPN General Purpose Amplifier

(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = +150 C 30 30 30 5.0 15 5.0 V V V V nA A

ON CHARACTERISTICS
hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA 548 548A 548B 548C 110 110 200 420 800 220 450 800 0.25 0.60 0.70 0.77

VCE(sat) VBE(on)

Collector-Emitter Saturation Voltage Base-Emitter On Voltage

IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA VCE = 5.0 V, IC = 2.0 mA VCE = 5.0 V, IC = 10 mA

0.58

V V V V

SMALL SIGNAL CHARACTERISTICS

hfe NF Small-Signal Current Gain Noise Figure IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz VCE = 5.0 V, IC = 200 A, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 125 900 10 dB

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Preliminary

First Production

No Identification Needed

Full Production

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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G