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SANKEN ELECTRIC CO.,LTD.

CAUTION / WARNING
The information in this publication has been carefully checked and is believed to be
accurate; however, no responsibility is assumed for inaccuracies.
Sanken reserves the right to make changes without further notice to any products herein
in the interest of improvements in the performance, reliability, or manufacturability of its
products. Before placing an order, Sanken advises its customers to obtain the latest
version of the relevant information to verify that the information being relied upon is
current.
Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property rights
or any other rights of Sanken or any third party which may result from its use.
When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death,
fires or damages to the society due to device failure or malfunction.
Sanken products listed in this catalog are designed and intended for the use as
components in general purpose electronic equipment or apparatus (home appliances,
office equipment, telecommunication equipment, measuring equipment, etc.).
Before placing an order, the users written consent to the specifications is requested.
The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
Anti radioactive ray design is not considered for the products listed herein.
This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.
Gallium arsenide is used in some of the products listed in this publication. These
products are dangerous if they are burned or smashed in the process of disposal. It is
also dangerous to drink the liquid or inhale the gas generated by such products when
chemically disposed.

Contents
Examples of Use of Typical Products by Application

.............. 2

1 ICs
1-1. Regulator ICs
................................................................................ 7

Application Note

Dropper Type Regulator ICs

......................................................... 8

Dropper Type System Regulator ICs


Switching Type Regulator ICs

...................................... 16

................................................... 22

1-2. Power Switch ICs


High-side Power Switch ICs

...................................................... 24

Low-side Switch ICs

...................................................... 50

1-3. Motor Driver ICs


Stepper-motor Driver ICs
DC Motor Driver ICs
1-4. HID Lamp Driver ICs
1-5. Custom ICs

............................................................ 56

...................................................................... 60
..................................................................... 64

....................................................................................... 76

2 Discretes
2-1. Transistors
2-1-1. Transistors

............................................................................ 80

2-1-2. Transistor Arrays

............................................................... 96

2-2. MOS FETs


2-2-1. MOS FETs

......................................................................... 108

2-2-2. MOS FET Arrays

............................................................. 117

2-3. Thyristors
2-3-1. Reverse Conducting Thyristors

.............................. 125

2-4. Diodes
2-4-1. Alternator Diodes

........................................................... 127

2-4-2. High-voltage Diodes for Igniter


2-4-3. Power Zener Diodes

................................ 128

..................................................... 129

2-4-4. General-purpose Diodes

............................................ 130

3 LEDs
3-1. Uni-Color LED Lamps

................................................................ 134

3-2. Bi-Color LED Lamps

.................................................................. 137

3-3. Surface Mount LEDs

.................................................................. 138

3-4. Infrared LEDs .................................................................................. 140


3-5. Ultraviolet LEDs

............................................................................ 141

3-6. Multi-chip Modules

.................................................................... 142

Part Number Index in Alphanumeric Order

......................................... 147

Examples of Use of Typical Products by Application


Throttle System
Motor Driver ICs (p.60 and after)
DC
Control IC and full bridge power stage in a single package.
Surface-mounting type series are also available.

SI-5300 / SPF7301

Driver Transistor Arrays (p.99)


Motor
H-bridge of NPN x 2 and PNP x 2 in a single package.
With integrated back emf. clamp diode.

Alternators

SLA8004

driver power transistors (p.68 and after)


Motor
With integrated back emf. clamp diode.

(p.127)
Diodes
Solder and press fit type as well as Zener type is available.

2SA1568 / 2SC4065

SG-9 / SG-10 / SG-14

ICs
Regulator
Custom-made (contact our sales reps.)

Fuel Injectors
transistors (p.84 and after)
Injector
Transistors and MOS FETs are available in discretes and arrays in
various packages.

2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C /


STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103

Headlamps
lamp driver ICs (p.64 and after)
HID
High-voltage controller IC and 4-circuit power stage in a
single package.
Direct drive from CPU.

SLA2402M / SLA2403M / SMA2409M

for HID lamp ignition (p.125 and after)


Thyristors
Best suited to C-discharge SW element on high-voltage
primary side of an igniter.
Integrates a reverse direction diode.
High di/dt resistance

TFC561D / TFC562D

FET arrays for driving HID lamps (p.122)


MOS
4 circuits of N-ch MOS FETs of 450V/7A in a single package.
SMA5113

stepper-motor driver ICs for AFS (p.58 and after)


2-ph
Low output saturation voltage, integrated recovery diode,
surface-mount.

SPF7211

Ignition System
diodes for ignition (p.128)
High-voltage
Withstand voltage range: 0.5 to 15kV
SHV-01JN / SHV-05J / SHV-06JN

2SD2141 / MN638S
ICs
Ignition
Custom-made (contact our sales reps.)
Ignition transistors (p.89 and after)

Room Lamp

Multi-chip LED modules (p.142)


Car Navigation and Audio
Power Steering

Various LEDs (p.133)

driver MOS FETs (p.108 and after)


Motor
Various packages integrating low ON resistors,
bidirectional Zener diodes, etc.

2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 /


2SK3801 / 2SK3803 / 2SK3851

Tail Lamps
LED
Power
Custom-made
(contact our sales reps.)

O2 sensor heater
driver MOS FETs (p.115)
Heater
Low ON resistor and integral gate protection
diode.

FKV460S

Transmission

ABS and VDC

solenoid drivers (high-side power switch ICs) (p.26 and after)


AT
Integral diagnostic function, surface-mount, 2- and 3-circuit types and other

driver MOS FETs (p.108 and after)


Solenoid/motor
Various packages from discretes to arrays.

diverse models.

SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M


AT linear solenoid driver (high-side power switch ICs) (p.46 and after)

Integral current detection resistor, current monitor output, surface-mount and

2SK3710 / FKV660S / SLA5027 / SDK08

driver ICs (p.54)


Solenoid/motor
Surface-mount 4-circuit type with output voltage monitor.
SPF5012

2-circuit types are also available.

SPF5017 / SPF5018
3

1 ICs
1-1. Regulator ICs
Application Note

1-3. Motor Driver ICs

..............................................

Dropper Type Regulator ICs

....................

7
8

Stepper-motor Driver ICs


SLA4708M (50V, 1.5A)

.........................

56

...................................

56
58

SI-3001S (5V/1A, With Output ON/OFF Control) ... 8

SPF7211 (40V, 0.8A)

.....................................

SI-3003S (5V/0.8A, 3-terminal) ....................... 10

DC Motor Driver ICs

....................................

60

SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12

SI-5300 (40V, 5A)

.....................................

60

SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14

SPF7301 (36V, 7A)

.....................................

62

Dropper Type System Regulator ICs

..

16

SI-3322S (5V, Surface-mount) ........................ 16

1-4. HID Lamp Driver ICs

SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18

SLA2402M (500V, 15A) .................................. 64

SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20

SLA2403M (500V, 7A) .................................... 68

...............

22

............................................

22

Switching Type Regulator ICs


SI-3201S (5V/3A)

SMA2409M (500V, 7A) ................................... 72

1-5. Custom ICs

.....................................

76

1-2. Power Switch ICs


High-side Power Switch ICs

...................

24

SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24


SI-5151S (With Diagnostic Function) .............. 26
SI-5152S (With Diagnostic Function) .............. 28
SI-5153S (With Diagnostic Function, Built-in Zener Diode) 30
SI-5154S (With Diagnostic Function, Built-in Zener Diode) 32
SI-5155S (With Diagnostic Function) .............. 34
SLA2501M (With Diagnostic Function, 3-circuits) 36
SLA2502M (With Diagnostic Function, 4-circuits) 38
SPF5003 (With Diagnostic Function, Surface-mount 2-circuits) 40
SPF5004 (With Diagnostic Function, Surface-mount 2-circuits) 42
SPF5007 (With Diagnostic Function, Surface-mount 3-circuits) 44
SPF5017 (Surface-mount 2-circuit, current monitor output function) 46
SPF5018 (Surface-mount, current monitor output function) 48
Low-side Switch ICs

...................................

50

..........

50

SPF5002A (Surface-mount 4-circuits)

SPF5009 (With Diagnostic Function, Surface-mount 4-circuits) 52


SPF5012 (Surface-mount 4-circuits with Output Monitor) 54

Application Note for Regulator ICs


Temperature and Reliability
Reliability of an IC is generally heavily dependent on
operating temperature. Heat radiation must be fully
considered, and an ample margin should be given
to the radiating area in designing heatsinks. When
mounting ICs on heatsinks, always apply silicone
grease and firmly tighten. Air convection should
actively be used in actual heat dissipation. The
reliability of capacitors and coils, the peripheral
components, is also closely related to temperature.
A high operating temperature may reduce the
service life. Exceeding the allowable temperature
may cause coils to be burned or capacitors to be
damaged. Make sure that output smoothing coils
and input/output capacitors do not exceed their
allowable temperature limit in operation. We
recommend, in particular, to provide an ample
margin for the ratings of coils to minimize heat
generation.

Power Dissipation (PD)


1. Dropper Type
PD = IO [VIN (mean) - VO]
V
PD = VO I O ( 100 - 1) - VF IO (1 - O )
VIN
Efficiency
depends on input/output conditions.
Refer to the efficiency characteristics.

VIN : Input voltage

Setting DC Input Voltage


Observe the following precautions when setting the
DC input voltage:
VIN (min) must be at least the set output voltage
plus dropout voltage for the dropper type. It must
be at least the recommended lowest input
voltage for the switching type.
V IN (max) must not exceed the DC input voltage of
the electrical characteristics.

Screw Torque
Screw torque should be between 0.588 to 0.686
[N m] (6.0 to 7.0 [kgf cm]).

Recommended silicone grease

2. Switching Type

VO : Output voltage

generally used. Moreover, the heat dissipation


capacity of a heatsink is heavily dependent on how
it is mounted. It is therefore important and
recommended to measure the heatsink and case
temperature in actual operating environments.

: Efficiency

Volatile type silicone grease may produce cracks


after elapse of long term, resulting in reducing heat
radiation effect.
Silicone grease with low consistency (hard grease)
may cause cracks in the mold resin when screwing
the product to a heatsink.

VF : Diode forward voltage

IO : Output current

Heatsink Design
The maximum junction temperature Tj (max) and the
maximum case temperature Tc (max) given in the
absolute maximum ratings are specific to each
product type and must be strictly met. Thus,
heatsink design must be performed in consideration
of the condition of use which affects the maximum
power dissipation PD (max) and the maximum
ambient temperature Ta (max). To facilitate heatsink
design, the relationship between these two
parameters is presented in the Ta-PD characteristic
graphs. Heatsink design must be performed in the
following steps:
1. Obtain the maximum ambient temperature Ta
(max) (within the set).
2. Obtain the maximum power dissipation P D
(max).
3. Identify the intersection on the Ta-PD characteristic graph and obtain the size of the
heatsink to be used.
The size of a heatsink has been obtained. In actual
applications, a 10 to 20% derating factor is

Type

Suppliers

G746

Shin-Etsu Chemical Co., Ltd.

YG6260

GE Toshiba Silicones Co., Ltd.

SC102

Dow Corning Toray Silicone Co., Ltd.

Others
This product may not be connected in parallel.
The switching type may not be used for current
boosting and stepping up voltage.

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

External Dimensions (unit: mm)

Features
Output current of 1.0A
5-terminal type <output on/off control, variable output voltage (rise only)>
Voltage accuracy of 2%
Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A
Built-in overcurrent, overvoltage and thermal protection circuits
Withstands external electromagnetic noises
TO220 equivalent full-mold package

3.2 0.2

4.2 0.2
2.8 0.2

(2.0)
0.950.15

(Ta = 25C)

Ratings

Unit

+0.2

Conditions

DC Input Voltage

VIN

35

Output Control Terminal Voltage

VC

VIN

Output Current

IO

1
1.0 *

PD1

18

With infinite heatsink

PD2

1.5

Stand-alone without heatsink

0.85 0.1

(8.0)

Symbol

(4.6)

Absolute Maximum Ratings

5.0 0.6

2.6 0.1

Parameter

(17.9)

16.90.3

4.00.2

7.90.2

0.5

10.00.2

+0.2
0.1

0.45
P1.70.7 4=6.80.7

3.9 0.7

Power Dissipation
1

Junction Temperature

Tj

40 to +125

Operating Temperature

TOP

40 to +100

Storage Temperature

Tstg

40 to +125

Junction to Case Thermal


Resistance

j-c

5.5

C/W

Junction to Ambient-Air Thermal


Resistance

j-a

66.7

C/W

(4.3)

8.2 0.7

1. GND
2. VC (on/off)
3. Vo
4. Vosense
5. VIN

a: Part No.
b: Lot No.

(Forming No. 1101)

Stand-alone without heatsink

Equivalent Circuit Diagram


Tr1

3
VO

VIN
R1

Electrical Characteristics
Symbol
VIN

Input Voltage

VO

Output Voltage

min

typ

R3

6 *2
4.90

max
30 *1

5.00

Unit

Conditions
e
d

5.10

VIN =12 to 16V, IO = 0.4A

0.5

IO 0.4A
IO 1.0A

VDIF
1.0

Line Regulation

VO LINE

30

mV

IO =0.4A, VIN = 6 to 16V

Load Regulation

VO LOAD

100

mV

IO = 0 to 0.4A

Output Voltage Temperature


Coefficient

VO /T

0.5

mV/C
dB

f =100 to 120Hz

mA

IO = 0A

RREJ

54

Iq

Overcurrent Protection Starting


Current

I S1

3
1.2 *

Output ON

VC, IH

2.0 *

Output OFF

VC, IL

0.8

Output ON

I C, IH

20

VC = 2.7V

Output OFF

I C, IL

0.3

mA

VC = 0.4V

Vc Terminal

R2

1
a : Pre-regulator
GND
b : Output ON/OFF control
c : Thermal protection
d : Over-input and overcurrent protection

e : Drive circuit
f : Error amplifier
g : Reference voltage

Standard Circuit Diagram


D1

Control Voltage

Control Current

VIN

SI-3001S

OPEN

DC input +

Notes:
*1. Since PD (max) = ( VIN VO) IO = 18( W ), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the
Ta -PD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to 5%.
*4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus,
LS-TTL direct driving is also possible.

R4

Vc
(on/off)

IO =5mA, Ta = 10 to +100C

Quiescent Circuit Current

10

Dropout Voltage

Ripple Rejection

4
VO sense

( Tj= 25C, VIN =14V unless otherwise specified)

Ratings
Parameter

MIC

C1

C2

4
1

CO

DC output

VO

Co :
Output capacitor (47 to 100F, 50V)
C1, C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F).
These are required for inductive input lines or long wiring.
Tantalum capacitors are recommended for C1 and Co,
especially at low temperatures.
Protection diode. Required as protection against reverse
D1 :
biasing between input and output.
(Recommended diode: Sanken EU2Z.)

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

Electrical Characteristics
Io vs VDIF Characteristicsc

Line Regulation

Load Regulation
5.1

5.1

0.3

0.2

Output voltage VO (V)

IO =
0 (A)
0.4 (A)
1.0 (A)

0.4
Output voltage VO (V)

Dropout voltage VDIF (V)

0.5

5.0

V IN =
30 ( V)
12 to 16 ( V)
5.5 ( V)
5.0

0.1
4.9
0

0.5

1.0

4.9

10

Output current IO (A)

15

20

25

30

0.5

Output Voltage Temperature Characteristics

Rise Characteristics

5.1

1.0

Output current IO (A)

Input voltage VIN (V)

Quiescent Circuit Current


15

Io = 0 (A)

16(V)

VIN =
30(V)

5.0
14(V)
5.5(V)

VIN IOUT condition


5.5 (V) / 1.0 (A)
12 (V) / 0.4 (A)
14 (V) / 0.4 (A)
16 (V) / 0.4 (A)
30 (V) / 0 (A)

4.9
0

--50

50

100

Load resistance

5
4
3

12 ()

150

10

Io = 0 (A)
VIN = 6 (V)

I o = 0 (A)
VIN = 14 (V)
5

2
1

ON

10 (V)
Output voltage VO (V)

Output voltage VO (V)

30 (V)

4
3

5.5 (V)
20 (V)

2
14 (V)

0
0

0.5

1.0

Output ON/OFF control voltage VC (V)

1.5

2.0

2.5

3.0

Ta PD Characteristics
20

Use G746 silicone grease


(Shin-Etsu Chemical) and
aluminum heatsink.

With infinite heatsink

Power Dissipation PD (W)

5
4
3
2

3
2

0
0 125

130

135

140

145

150

155

Ambient temperature Ta (C)

Output current IO (A)

Overvoltage Protection Characteristics

OFF

10

Thermal Protection Characteristics

Input voltage VIN (V)

Overcurrent Protection Characteristics

5
Output voltage VO (V)

Input voltage VIN (V)

ON/OFF Control Characteristics


6

10

5 ()

Ambient temperature Ta (C)

Output voltage VO (V)

Quiescent current lq (mA)

12(V)

Output voltage VO (V)

Output voltage VO (V)

Note on Thermal Protection Characteristics:


The thermal protection circuit is intended for protection
against heat during instantaneous short-circuiting. Its
operation, including reliability, is not guaranteed for
short-circuiting over an extended period of time.

15
2002002mm (2.3C/W)

10 1001002mm (5.2C/W)
75752mm (7.6C/W)

1
Without heatsink

0
10

20

30

40

Input voltage VIN (V)

50

0
--30 20

20

40

60

80

100

Operating temperature Ta (C)

Dropper Type Regulator ICs [3-terminal] SI-3003S

Features

External Dimensions (unit: mm)

3-terminal IC regulator with 0.8A output current


Voltage accuracy of 2%
Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A
Built-in dropping type overcurrent, overvoltage and thermal protection circuits
TO220 equivalent full-mold package

4.2 0.2
3.2 0.2

2.8 0.2

16.9 0.3

7.9 0.2
40.2
0.5

10 0.2

Output current

(Ta =25C)

Symbol

Ratings

Unit

VIN

35

0.8 *

IO

2.6 0.15

Conditions
0.94 0.15

(13.5)

Parameter
DC input voltage

2 max

Absolute Maximum Ratings

PD1

22

With infinite heatsink

PD2

1.8

Stand-alone without heatsink

Tj

40 to +150

Operating temperature

TOP

40 to +100

Storage temperature

Tstg

40 to +150

+0.2

0.85 0.1

Power Dissipation

Junction to case thermal resistance

j-c

5.5

C/W

Junction to ambient-air thermal


resistance

j-a

66.7

C/W

Electrical Characteristics
Parameter

Symbol

Ratings

Input voltage

VIN

6*2

Output voltage

VO

4.90

Dropout voltage

VO LINE

Load regulation

VO LOAD

Ripple rejection

RREJ

Overcurrent protection starting


current

Stand-alone without heatsink

30 * 1

5.00

5.10

Equivalent Circuit Diagram

Conditions

VIN

VO
5

0.5

IO 0.5A

1.0

IO 0.8A

30

mV

VIN =8 to 16V

100

mV

IO =0 to 0.5A

dB

f=100 to 120Hz

mA

IO =0A

OCP

VDIF

Line regulation

Quiescent circuit current

max

54
3

Iq
IS1

0.9 *

10

Terminal connections
1. VIN
a: Part No.
2. (NC)
b: Lot No.
3. GND
4. (NC)
5. VO
(Forming No. 1115)

1 2 3 4 5

Unit

typ

0.45 0.1

(root dimensions)

(Tj=25C, VIN =14V, IO =0.5A unless otherwise specified)

min

+0.2

4P1.7 0.15 = 6.8 0.15

DRIVE

Junction temperature

TSD

DET
ERR
REF

3
GND

Notes:
*1. Since P D (max) = (VIN VO) IO =22 (W), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the
Ta P D curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, I O=0.5A) drops to 5%.

Standard Circuit Diagram


D1 *2

1
DC input + *1

VIN

C1

C2

N.C

SI-3003S
3

5
4

N.C +

CO

DC output

VO

Co :
Output capacitor (47 to 100F, 50V)
*1 C1,C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F).
These are required for inductive input lines or long
wiring. Tantalum capacitors are recommended for C1
and Co, especially at low temperatures.
*2 D1 : Protection diode. Required as protection against reverse
biasing between input and output.
(Recommended diode: Sanken EU2Z.)

10

Dropper Type Regulator ICs [3-terminal] SI-3003S

Electrical Characteristics
Io vs VDIF Characteristics

Line Regulation

Load Regulation
5.1

5.1

0.5

0.3

0.2

5.0
IO =0A
=0.2A
=0.5A
=0.8A

4.9

IO=0.5, 0.8A
=0.2A
=0A

VIN =35V
=25V
=14V
=6V

4.9

0
0

0.2

0.4

0.6

0.8

10

15

20

25

30

35

Output Voltage Temperature Characteristics

Ground current lg (mA)

Output voltage VO (V)

200

4
3
2

50

100

10

Input voltage VIN (V)

Ambient temperature Ta (C)

Overcurrent Protection Characteristics

VIN =6V
14V

4
3
2

0
0.5

1.0

1.5

Output current IO (A)

25

30

35

With silicone grease


Heatsink: aluminum

20
200 200 2mm
(2.3C/W)
15
100 100 2mm
(5.2C/W)
10
75 75 2mm
(7.6C/W)
5
Without heatsink

25V

20

With infinite heatsink

35V

15

25

Power Dissipation PD (W)

Output voltage VO (V)

10

Ta PD Characteristics

VIN =6V
IO=5mA

Input voltage VIN (V)

Thermal Protection Characteristics

IO=0.8A
=0.5A
=0.2A
=0A

100

150

150

50

0.8

250
IO =0A
=0.5A
=0.8A

4.9
50

0.6

Circuit Current

VIN / IO:
30V / 0A
14V / 0.5A
6V / 0.8A

0.4

Output current IO (A)

Rise Characteristics

5.1

5.0

0.2

Input voltage VIN (V)

Output current IO (A)

Output voltage VO (V)

5.0

0.1

Output voltage VO (V)

Output voltage VO (V)

Output voltage VO (V)

Dropout voltage VDIF (V)

0.4

2.0

2.5

0
120

140

160

180

200

Ambient temperature Ta (C)

0
40

40

80

100

Operating temperature Ta (C)

Note on Thermal Protection Characteristics:


The thermal protection circuit is intended for protection
against heat during instantaneous short-circuiting. Its
operation, including reliability, is not guaranteed for
short-circuiting over an extended period of time.

11

Dropper Type Regulator ICs [2-output] SI-3101S

External Dimensions (unit: mm)

Features
Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)>
Main output can be externally turned ON/OFF (with ignition switch, etc.)
<most suitable as memory backup power supply>
Low standby current ( 0.8mA)
Low dropout voltage 1V
Built-in dropping type overcurrent, overvoltage and thermal protection circuits
TO220 equivalent 5-terminal full-mold package

3.2 0.2

4.2 0.2
2.8 0.2

16.9 0.3

4.0 0.2

7.9 0.2

0.5

10.0 0.2

2.6 0.1

5.0 0.6

(2.0)

0.95 0.15

(Ta=25C)

Ratings

Unit

DC input voltage

VIN

40

Battery reverse connection

VINB

13 * 6

+0.2

0.85 0.1

Conditions

(8.0)

Symbol

(4.6)

Absolute Maximum Ratings


Parameter

(17.9)

+0.2
0.1

0.45

VC

VIN

CH1

IO1

0.07 *

CH2

IO2

0.4 * 1

PD1

18

With infinite heatsink

PD2

1.5

Stand-alone without heatsink

Tj

40 to +125

Operating temperature

TOP

40 to +115

Storage temperature

Tstg

40 to +125

Output control terminal voltage

P1.7 0.7 4 = 6.80.7

One minute

3.9

(4.3)
8.2 0.7

V
1

1. VIN
2. VC (on/off)
3. GND
4. VO1
5. VO2

Output current
1

a: Part No.
b: Lot No.

Power Dissipation
Junction Temperature

Junction to case thermal resistance

j-c

5.5

C/W

Junction to ambient-air thermal


resistance

j-a

66.7

C/W

(Forming No. 1101)

Equivalent Circuit Diagram


Stand-alone without heatsink

VO1

VIN
1

DRIVE

OCP
TSD

Electrical Characteristics

DET
ERR

(Tj=25C, VIN =14V unless otherwise specified)

REF

Ratings
Parameter

Symbol

min

typ

max

Unit

VO2

Conditions
OCP

6 *2

35 * 1

OVP

CH1

VO1

4.80

5.00

5.20

CH2

VO2

4.80

5.00

5.20

IO =0.3A

0.1

IO1 =0 to 0.05A
IO2 =0 to 0.3A

DRIVE

VIN

Input voltage

IO =0.05A

DET
ERR

Output voltage

Channel-channel voltage difference


(VO1 VO2)
Dropout voltage

Line regulation

VO

0.1

CH1

VDIF1

1.0

IO1 0.05A

CH2

VDIF2

1.0

IO2 0.4A

CH1

VO LINE1

10

30

mV

VIN =6 to 18V, IO =0.05A

CH2

VO LINE2

10

30

mV

VIN =6 to 18V, IO =0.3A

CH1

VO LOAD1

30

70

mV

IO1=0 to 0.05A

CH2

VO LOAD2

40

70

mV

IO2 =0 to 0.3A

2
VC

GND

CONT

Standard Circuit Diagram


D3

Load regulation

D2

VIN

CH1

RREJ1

54

dB

f =100 to 120Hz

CH2

RREJ2

54

dB

f =100 to 120Hz

mA

IO1=0A, VC =0V

SI- 3101S

D1

Ripple rejection

Quiescent circuit current


Overcurrent protection
starting current

0.8

Iq

CH1

I (S1) 1

CIN

3
0.1 *

0.5 * 3

I (S1) 2
VCH

4.2

4.5

4.8

Output OFF

VCL

3.2

3.5

3.8

Output ON

I CH

100

VC =4.8V

Output OFF

I CL

VC =3.2V

Output control voltage

Overvoltage protection starting


voltage

VOVP

35 * 4

Thermal protection starting


temperature

TTSD

130 * 5

Notes:
*1. Since P D (max) = (VIN VO) IO1 + (VIN VO2) IO2 = 18 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on
operating conditions. Refer to the TaPD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to 5%.
*4. Overvoltage protection circuit is built only in CH2 (VO2 side).
*5. The indicated temperatures are junction temperatures.
*6. All terminals, except VIN and GND, are open.

12

4
VO1

GND
CO1

+
CO2

CH2

100

Output ON

Output control current

VC

VO2
5

CO1 :
CO2 :
*1 CIN :

Output capacitor (47 to 100F, 50V)


Output capacitor (47 to 100F, 50V)
Input capacitors (approx. 47F).
Tantalum capacitors are recommended for CO1, CO2
and CIN, especially at low temperatures.
*2 D1, D2, D3 : Protection diode.
Required as protection against reverse biasing
between input and output.
(Recommended diode: Sanken EU2Z.)

Dropper Type Regulator ICs [2-output] SI-3101S

Electrical Characteristics
Line Regulation (2)

5.1

Load Regulation (1)


5.1

5.1

VC = 5 (V)
I O1 = 0 (A)

I O1 =
0mA

Output voltage VO (V)

50mA

5.0
70mA

4.9

I O2 =

0A
0.3A
5.0

0.5A

10

15

20

0
0

25

V IN =
6V 14V

Input voltage V IN (V)

10

15

20

25

10

Rise Characteristics

5.1

20

30

40

50

60

70

Output current IO (mA)

Input voltage V IN (V)

Load Regulation (2)

22V

5.0

4.9

4.9

0
0

Quiescent Circuit Current

VC = 5 (V)
I O1 = 0 (A)

10

V IN =
6V,14V

5.0

I O1 = 0 (A)
Vc = 0 (V)

5
Output voltage VO (V)

Output voltage VO (V)

VC = 5 (V)
I O2 = 0 (A)

22V

Quiescent current lq (mA)

Output voltage VO (V)

VC = 5 (V)
IO2 = 0 (A)

Output voltage VO (V)

Line Regulation (1)

Load resistor
100

3
2

71.4

4.9
0.1

0.2

0.3

0.4

0.5

0.6

Output current IO (A)

5
Output voltage VO1 (V)

Output voltage VO2 (V)

6V

3
2
OFF

ON

10

0
0

IO2 = 0 (A)
VC = 5 (V)

4.5V

VIN =
6V
14V
22V

I O1 = 0 (A)
VC = 5 (V)

3
2
1
0

0.05

0.1

0.15

0.1

0.2 0.3 0.4

TaPD Characteristics

20

VIN = 6 (V)
I O1 = I O2 = 5 (mA)

With silicone grease G746


(Shin-Etsu Chemical)
Heatsink: aluminum

With infinite heatsink

Output voltage VO (V)

4
3
2

VO1

4
IO1 = I O2 = 5 (mA)
VC = 5 (V)

VO2

0.5 0.6 0.7 0.8

Output current IO (A)

Overvoltage Protection Characteristics

20

4.5V

Output current IO (A)

Thermal Protection Characteristics

15

Overcurrent Protection Characteristics (2)

V IN =
6V
14V
22V

10

Output ON/OFF control voltage VC (V)

Input voltage VIN (V)

Output voltage VO1 (V)

Overcurrent Protection Characteristics (1)


6

V IN =
14V, 22V

Input voltage VIN (V)

ON/OFF Control Characteristics

Output voltage VO2 (V)

Power Dissipation PD (W)

15
200 200 2mm (2.3C/W)

10 100 100 2mm (5.2C/W)


75 75 2mm (7.6C/W)

5
Without heatsink

130

140

150

160

Ambient temperature Ta (C)


Note on Thermal Protection Characteristics:
The thermal protection circuit is intended for protection against heat
during instantaneous short-circuiting. Its operation, including reliability,
is not guaranteed for short-circuiting over an extended period of time.

10

20

30

Input voltage VIN (V)

40

0
--30 --20 0

20

40

60

80

100 115

Operating temperature Ta (C)

13

Dropper Type Regulator ICs [2-output] SI-3102S

External Dimensions (unit: mm)

Features
Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)>
Main output can be externally turned ON/OFF (with ignition switch, etc.)
<most suitable as memory backup power supply>
Low standby current ( 0.8mA)
Low dropout voltage 1V
Built-in dropping type overcurrent, overvoltage and thermal protection circuits
TO220 equivalent 5-terminal full-mold miniature package

3.2 0.2

4.2 0.2
2.8 0.2

(17.9)

16.9 0.3

4.0 0.2

7.9 0.2

0.5

10.0 0.2

2.6 0.1

Ratings

Unit

DC input voltage

VIN

35

Battery reverse connection

VINB

13 * 6

Output control terminal voltage

VC

VIN

CH1

IO1

0.04 * 1

CH2

IO2

0.1 * 1

5.0 0.6

0.95 0.15

(Ta=25C)

Symbol

+0.2

Conditions

0.85 0.1

(8.0)

Parameter

(4.6)

Absolute Maximum Ratings

(2.0)

+0.2
0.1

0.45

Output current

One minute

3.9 0.7

P1.7 0.7 4 = 6.8 0.7

PD1

22

With infinite heatsink

PD2

1.8

Stand-alone without heatsink

Junction temperature

Tj

40 to +150

Operating temperature

TOP

40 to +105

Storage temperature

Tstg

1. VIN
2. VC (on/off)
3. GND
4. VO1
5. VO2

Power Dissipation

40 to +150

Junction to case thermal resistance

j-c

5.5

C/W

Junction to ambient-air thermal


resistance

j-a

66.7

C/W

(4.3)

8.2 0.7

a: Part No.
b: Lot No.

(Forming No. 1101)

Equivalent Circuit Diagram


Stand-alone without heatsink

VO1

VIN
1

Parameter

Symbol
VIN

Input voltage

TSD

(Tj = 25C, VIN = 14V unless otherwise specified)

Ratings
min

typ

6 *2

max

Unit

30 * 1

Conditions

REF

VO1

4.80

5.00

5.20

IO = 0.04A

CH2

VO2

4.80

5.00

5.20

IO = 0.1A

0.1

IO1 =0 to 0.04A
IO2 =0 to 0.1A

1.0

IO1 0.04A
IO2 0.1A

OCP

Output voltage

Dropout voltage

CH1

VO

0.1

VDIF1

5
VO2

CH1

Channel-channel voltage difference


(VO1 VO2)

DET
ERR

CH2

VDIF2

1.0

CH1

VO LINE1

10

50

mV

CH2

VO LINE2

10

50

mV

VIN = 6 to 30V, IO = 0.1A

CH1

VO LOAD1

30

70

mV

IO1 = 0 to 0.04A

70

mV

IO2 = 0 to 0.1A

OVP

DRIVE

Electrical Characteristics

DRIVE

OCP

DET
ERR

2
VC

GND

CONT

VIN = 6 to 30V, IO = 0.04A

Line regulation

Load regulation
CH2

VO LOAD2

40

CH1

RREJ1

54

dB

f = 100 to 120Hz

CH2

RREJ2

54

dB

f = 100 to 120Hz

mA

IO1 = 0A, VC = 0V

Ripple rejection
Quiescent circuit current
Overcurrent protection
starting current

0.8

Iq

CH1

I (S1) 1

0.06 *

CH2

I (S1) 2

0.15 *

Output ON

VCH

4.2

Output OFF

VCL

Output ON

I CH

Output OFF

I CL

Standard Circuit Diagram


D3
D2

VIN

4.5

4.8

3.2

3.5

Output control current


100

Overvoltage protection starting


voltage

VOVP

30 *

Thermal protection starting


temperature

TTSD

151 *

3.8

100

VC = 4.8V

VC = 3.2V

CIN

2
VC

Notes:
*1. Since P D (max) = (VIN VO) IO1 + (VIN VO2) IO2 = 22 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on
operating conditions. Refer to the TaPD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to 5%.
*4. Overvoltage protection circuit is built only in CH2 (VO2 side).
*5. The indicated temperatures are junction temperatures.
*6. All terminals, except VIN and GND, are open.

14

SI- 3102S

D1

Output control voltage

CO1 :
CO2 :
*1 CIN :

VO2
5

1
3

4
VO1

GND
CO1

+
CO2

Output capacitor (47 to 100F, 50V)


Output capacitor (47 to 100F, 50V)
Input capacitors (approx. 47F).
Tantalum capacitors are recommended, for CO1,
CO2 and CIN, especially at low temperatures.
*2 D1, D2, D3 : Protection diode.
Required as protection against reverse biasing
between input and output.
(Recommended diode: Sanken EU2Z.)

Dropper Type Regulator ICs [2-output] SI-3102S

Electrical Characteristics
Line Regulation (1)

Line Regulation (2)

5.10

Load Regulation (1)

5.10

5.10

VIN = VC
IO2 = 5mA

VIN = VC
IO1 = 5mA

VIN = VC

5.05
IO1 =
0A
20mA
40mA

5.00

4.95

4.90

5.05
IO2 =
0A
50mA
100mA

5.00

Output voltage VO (V)

Output voltage VO (V)

Output voltage VO (V)

5.05

4.95

4.90

4.85
5

10

15

20

25

30

35

4.95

4.90

4.85
0

VIN =
6V
14V
30V

5.00

4.85
0

Input voltage V IN (V)

10

15

20

25

30

35

10

Load Regulation (2)

Rise Characteristics

5.10

20

30

12

10

VC = 0V
IO1 = 0A

VIN =
6V,14V

5.00

4.95
30V

4.90

4
IO1 = 0A
20mA
40mA

3
2
1

4.85

0
40

60

80

100

OFF
ON

VIN =
6V
14V
30V

3
2

4
VIN =
6V
14V
30V

3
2

0
0

20

Output ON/OFF control voltage VC (V)

40

60

80

100

120

0.1

Output current IO (mA)

VIN = VC
IO2 = 5mA

With infinite heatsink

Power Dissipation PD (W)

Output voltage VO (V)

VO1

4
3
VO2

0
100

0
26

0.4

0.5

25

VIN = 6V
IO1 = IO2 = 5mA

0.3

TaPD Characteristics

0.2

Output current IO2 (A)

Overvoltage Protection Characteristics

35

Thermal Protection Characteristics

30

25

VIN = VC
IO1 = 5mA

20

Output voltage VO2 (V)

Output voltage VO1 (V)

15

Overcurrent Protection Characteristics (2)

10

VIN = VC
IO2 = 5mA

Input voltage VIN (V)

Overcurrent Protection Characteristics (1)

VIN = 14V
IO2 = 5mA
Output voltage VO2 (V)

0
0

Input voltage VIN (V)

ON/OFF Control Characteristics

Output current IO (mA)

Output voltage VO1 (V)

Quiescent current lq (mA)

Output voltage VO (V)

Output voltage VO (V)

5.05

20

50

Quiescent Circuit Current

6
VIN = VC

40

Output current IO (mA)

Input voltage VIN (V)

With silicone grease G746


(Shin-Etsu Chemical)
Heatsink: aluminum

20
200 200 2mm
(2.3C/W)

15
100 100 2mm
(5.2C/W)

10
75 75 2mm
(7.6C/W)

5
Without heatsink

120

140

180

200

220

240

Ambient temperature Ta (C)


Note on Thermal Protection Characteristics:
The thermal protection circuit is intended for protection against heat
during instantaneous short-circuiting. Its operation, including reliability,
is not guaranteed for short-circuiting over an extended period of time.

28

30

32

34

Input voltage VIN (V)

36

38

0
40 20 0

20 40 60 80 100 120 140 160

Operating temperature Ta (C)

15

Dropper Type System Regulator ICs SI-3322S

External Dimensions (unit: mm)

Features
High accuracy output of 5V30mV
Memory backup power supply 4V0.2V
Power on reset function
Supply voltage monitor function
Watch dog timer
CR not required for setting external time constant

Index area

SI-3322S
Lot
SKA

7.40 10.00
7.60 10.65

Lot

3
0.25
45
0.75

Adhesive surface
10.10
10.50

0.23
0.32

2.35
2.65

Absolute Maximum Ratings


Parameter

Symbol

0.33
0.51

Applicable terminals
BAI, VCC, VNMIC

VIN (1)

Ratings

Unit

0.3 to 32

0.3 to 7

0.10
0.30

1.27 BSC

Conditions

0.40
1.27

0 to 8

Coplanarity
(height difference among leads)
0.1mm max.

VS, NMIC, RSTTC, OUTE


Terminal voltage
VSC, NMI, RESET, OUTE

VIN (2)

W/D, STBY

Standard Connection Diagram

Storage temperature

Tstg

40 to +125

Operating temperature

Top

40 to +105

PD

1.4

Power dissipation

+
IG. SW

+
47F

R2

(Ta = 25C unless otherwise specified)

Parameter

Symbol

min

typ

max

Unit

VSC

3.8

4.2

BAI = 4.2 to 16V, ISC = 0.2mA

VS

4.97

5.03

VCC = 5.2 to 16V, IO = 350mA

VS VSC voltage difference

VS

0.3

BAI input current

I BAI

0.6

mA

VCC input current

I CC

mA

VCC = 3 to 16V

VB input current

IB

25

mA

VCC = 3 to 16V

VCC = 5.2V, ISC = 50mA


BAI = 4.9 to 16V, ISC = 0.2mA

20

mA

VCC = BAI = 3 to 16V, ISC = 0mA

NMIC input current

I NMIC

0.04

0.1

0.4

mA

VCC = BAI = 14V

W/D input current

I W/D

0.04

0.1

0.4

mA

VCC = BAI = 14V

RSTTC input current

I RTC

0.04

0.1

0.4

mA

Lo

VNIL

4.9

5.1

Hysteresis

VN

0.12

0.3

NMI judge voltage


Hi

VNOH

Lo

VNOL

Hi

VSOH
VSOL
VROH

Lo

VROL

Hi

VUOH

Lo

VUOL

Hi

VTOH

Lo

VTOL

VNMIC VCC
1
BAI
+

VB

VS

VSC

VS0.5
0.6

SI-3322S

VS0.5
0.6
VS0.5

STBY

R1, R2: NMI judge voltage (5V typ) variable resistor


NMI judge voltage (R1 + R2) 2.5V/R2
R1, R2 2k
Normally, VNMIC terminal is open.

Isource = 1mA
Isink = 0.5mA

Isource = 1mA

Isink = 0.5mA

Isource = 1mA

Isink = 0.5mA

VS0.5

Isource = 1mA

Isink = 0.5mA

STBY

12

RESET

RSTTC: Normally open.


GND connected when TRE
is to be halved.

VNMIC
6

VCC
5

VB

VSC

VS
4

+
Current
limit circuit

Main
regulator
BAI 1

9 NMI

NMI judge
circuit

Backup regulator

Reference
oscillation
circuit

RESET output voltage


0.6

Microcomputer

Circuit Block Diagram

Start
circuit

AVCC

NMI

15

RESET

GND

VCC = BAI = 14V

VCC
9

NMI

Logic circuit

STBY output voltage


Hi

NMIC OUTE OUTE W/D RSTTC


W/D NMI Control GND
13
11
10
16
14
OPEN or GND

NMIC = 0V

NMI output voltage

Lo

Conditions

VSC output voltage

IS

VS output voltage

VS input current

47F

BATT

Ratings

+
68F

120
6

Electrical Characteristics

A/D converter,
I/O circuit, etc.

47F

R1

Ta = 25C

OUTE
control
circuit

GND 8

Counter

Frequency
comparator

STBY
control
circuit

15 STBY

RESET
control
circuit

12 RESET

OUTE output voltage


0.6
VS0.5

Isource = 1mA

0.6

Isink = 0.5mA

13
NMIC

11
OUTE

10
OUTE

16
W/D

14
RSTTC

OUTE output voltage


TST

10

20

ms

Reset release time

TRE

60

75

90

ms

Reset cycle

TRC

40

50

60

ms

Reset period

TRP

20

25

30

ms

W/D signal stop detect period

TWS

10

12.5

15

ms

Standby release time

Reset signal output time

TNR

80

Standby signal output time

TRS

10

W/D fail judge frequency

FFH

Out enable release time

TWE

40

s
s

50

Notes: The direction of current flowing into the IC is positive (+).

kHz

10

ms

Timing Chart
VCC
VS

(BAI=14V)

VSC

0V

0V

NMI
STBY

TRS

TST

TRP

TRE

TNR

RESET
OUTE

TWS

TRC

TWE

OUTE
W/D

HI or Lo
Power on

16

VNIL

VNIL+VN

W/D input stop W/D input start


(microcomputer (microcomputer
resets)
runaway)

Power off

Dropper Type System Regulator ICs SI-3322S

Electrical Characteristics
VS Line Regulation

VS Load Regulation

VS Rise Characteristics

5.03

5.03

5.02

5.02

5.01

VS (V)

VS (V)

IO = 0A

5
4.99

5
4.99

0.4A

4.98
4.97

VS (V)

IO = 0A
5.01

10

15

20

12V

VCC = 5.2V

4.97

25

0.4A
2

4.98

0.2

0.4

VCC (V)

0.6

0.8

1.0

1.2

0
0

1.4

VS Overcurrent Protection Characteristics

VCC Input Current

10

VCC (V)

IO (A)

VB Input Current

20

No load
5

4
15

3
VCC = 7V

I B (mA)

ICC (mA)

VS (V)

10

2
12V

1
0

0.5

1.5

10

IO (A)

15

20

VCC (V)

VS Input Current

VSC Rise Characteristics

15

20

VSC Overcurrent Protection Characteristics

20

10

VCC (V)

No load
5

4
15

10

VSC (V)

VSC (V)

IS (mA)

4
3

3
2

5
1

10

15

20

10

VCC (V)

15

20

BAI (V)

BAI Input Current

10

ISC (A)

VS-VSC Voltage Difference

NMI Judge Voltage Characteristics

500

500

No load
5

400

400

200

300

NMI (V)

VS (mV)

IBAI (A)

4
300

200

3
2

100

100

0
0

10

BAI (V)

15

20

20

40

60

ISC (mA)

80

100

120

0
4.5

4.7

4.9

5.1

5.3

5.5

VCC (V)

17

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004

External Dimensions (unit: mm)

Features
Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A)
Power on reset function
Watchdog timer
Built-in drooping type overcurrent and thermal protection circuits (ch1)

DC input voltage

VIN

Output control terminal voltage

EN

Output current

0.3 to 35
0.4
0.2

W/D/C

TC terminal input voltage

TC

CK terminal input voltage

CK

Vo1-fail terminal output voltage

Vo1-fail

Reset terminal output voltage

RESET

+0.2

2.0 0.8

Reverse connection 1 min max.

8
+0.15

1.270.25

400mS

40

Io2

Remarks

40

Io1

W/D/C terminal input voltage

Unit

13 to 35

CH2

MODE

Fin
thickness

(Ta=25C)

Ratings

CH1

MODE terminal input voltage

1.0 0.05
9

0.4 0.05

2.50.2

Symbol

+0.1

10.50.2
16

7.50.2

Absolute Maximum Ratings


Parameter

12.20.2

400mS

+0.15

0.25 0.05

0.3 to 7

Standard Connection Diagram

Junction temperature

Tj

40 to 150

Storage temperature

Tstg

40 to 150

Thermal resistance
(junction to case)

j-c

4.1

C/W

With infinite heatsink

Thermal resistance
(junction to ambient air)

j-a

38

C/W

With glass epoxy + copper foil board (size 5.0 x 7.4cm;


t: glass epoxy = 1.6mm/copper foil = 18m)

D1
Vo1

Vin
EN

Vo1

SPF3004
Cin

Vo1 fail

MODE

Co1

Vo2

Load

Battery

Parameter

Output voltage

Dropout voltage

Ripple rejection

min

max

5.00

5.10

CH1

Vo1

4.85

5.00

5.15

CH2

Vo2

3.15

3.30

3.45

VIN = Vo1+VDIF1 to 18V,


Io1 = 0 to 0.4A, Tj = 40 to 125C
VIN = Vo1+VDIF1 to 18V,
Io1 = 0 to 0.4A, Tj = 40 to 150C
VIN = Vo2+VDIF1+VDIF2 to 18V,
Io1 = 0 to 0.2A

CH1
CH1
CH2
CH1
CH2

VDIF11
VDIF12
VDIF2
RREJ1
RREJ2

0.5
0.25
0.5

Io1 = 0.4A
Io1 = 0.2A, Tj = 25C
Io2 = 0.2A

Iq

Overcurrent protection CH1


starting current
CH2
CH1
Residual current
at a short
CH2
EN output control voltage

VENth

ON

OFF
Vo1-fail terminal LOW voltage
Vo1-fail terminal HI voltage
Reset terminal LOW voltage
Reset terminal HI voltage
CH1
Reset detect voltage
CH2

0.402
0.201
0.402
0.201
1.0
0.9

50
250
10
100
1.80
0.80
1.80
0.80
3.5
3.5
50
30
1.0
0.5

IENH1
IENH2
1.0
IENL
Vfail L
Vfail H
Vo10.8V * 5
0.5
VRSL
VRSH
Vo10.8V * 5
Vo1thH
Vo1 0.97
Vo1thL
4.05
Vo2thH
Vo2 0.985
Vo2thL
3.00
Vo1th
0.255
Vo2th
0.105
tdly
0.70 Rtc Ctc 0.72 Rtc Ctc 0.74 Rtc Ctc
0.52 Rtc Ctc 0.54 Rtc Ctc 0.56 Rtc Ctc
twd
0.04 Rtc Ctc 0.06 Rtc Ctc 0.08 Rtc Ctc
twdp
Vmodeth
1.0
3.0
ImodeH
200
ImodeL
1.0
1.0
Vw/d/cth
3.0
1.0
Iw/d/cH
200
Iw/d/cL
1.0
1.0
Vckth
3.0
1.0
IckH
200
IckL
1.0
1.0

db

f = 100 to 200Hz

VIN = 16V, EN = 0V
VIN = 35V, EN = 0V

mA
mA
A
A
V
A
V
V
V
V
V
V
V
V
V
V
S
S
S
V

Io1 = Io2 = 0.2A


Vo1 = 4.5V
Vo2 = 2.8V
Vo1 = 0V
Vo2 = 0V
Tj = 40 to 125C

Rtc

Load

+
Co2

Ctc

Cin: Capacitor (39F) for oscillation prevention


CO1: Output capacitor (39F)
CO2: Output capacitor (39F)
Tantalum capacitors are recommended especially for low
temperatures.
D1, D2: Protection diodes.
Required as protection against reverse biasing between input
and output (Recommended diode: SANKEN EU2Z).

Timing Chart

*8
EN = 6.4V, Tj = 40 to 125C
EN = 3.51V, Tj = 40 to 125C
EN = 0V, Tj = 40 to 125C
Isink = 250A, (Pull-up resistance 20k typ)
Isource = 15A
Isink = 250A, (Pull-up resistance 20k typ)
Isource = 15A
Vrs, Vfail 4.5V
Vrs, Vfail 0.8V
Vrs 3.0V
Vrs 0.8V
Vo1th = Vo1thH-Vo1thL
Vo2th = Vo2thH-Vo2thL
Min. set time: 6mS
Min. set time: 4mS
Min. set time: 400S

CH1
CH2
Power on reset delay time
W/D time
W/D pulse time
MODE terminal control voltage
MODE = 5V
ON
MODE terminal
A
control current
MODE = 0V, Tj = 40 to 125C
OFF
V
W/D/C terminal control voltage
*7
W/D/C = 5V
ON
W/D/C terminal
A
control current
W/D/C = 0V, Tj = 40 to 125C
OFF
V
Min. clock pulse time = 5S (Duty 50%)
CK terminal control voltage
CK = 5V
ON
CK terminal control
A
current
CK = 0V, Tj = 40 to 125C
OFF
Notes:
*3: Refer to dropout voltage.
*4: Since PD (max) = {(VINVO1) (IO1+ IO2)} + (VIN Iq) + {(VO1VO2) IO2 } = 30W, VIN (max), IO1(max) and I O2(max) may be limited
depending on operating conditions.
*5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits.
*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155
C (min.) and 165C (typ). These values represent the design warranty.
*7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of
RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur.
*8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150C is 16mS (0.32V/mS) max.

Reset detect voltage


hysteresis width

TC

Conditions

4.90

IGND
Is11
Is21
Is21
Is22

35 * 4

Unit

Vo1+VDIF1 * 3

54
54
10
50
5
70

CK

D2

Ratings
typ

VIN

GND current

18

Symbol

Vo1

Quiescent circuit current

EN output control
current

W/D/C

CH1

Input voltage

RESET

GND

Electrical Characteristics

Vin

EN (ON) operation

EN

EN (OFF) operation

OCP
operation
Vo1thH

Vo1thL

Vo1

Reset
operation

Vo1 fail
(Vo1 pull-up)

OCP
operation
Reset
operation

Vo2

Vo2thL

Vo2thH

MODE
(Vo1 system connection)

Vmodeth
Vo1 pull-up status

Open status

TC
(3.3 pull-up)

RESET
W/D/C

tdly

tdly

twd

(Vo1 system connection)

tdly-twdp
twdp
Open status

CK

W/D
Stop period

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004

Electrical Characteristics
Rise Characteristics of Output Voltage

Line Regulation (V01)

Line Regulation (V02)

IO2=0A
0.2A

3.50
Output voltage VO2 (V)

IO1=0A
0.4A

Output voltage VO1 (V)

Output voltage VO1, VO2 (V)

5.10

5.00

IO1=0A
0.2A
0.4A

10

IO2 =0A
0.1A
0.2A
3.30

4.90
0

3.40

Input voltage V IN (V)

10

20

30

40

10

Load Regulation (V01)

20

30

40

Input voltage VIN (V)

Input voltage VIN (V)

Load Regulation (V02)

Dropout Voltage (V01)


1.0

3.40

VIN =6V
10V
14V
18V

0.5

3.30

4.90
0

Dropout voltage

VIN =6V
10V
14V
18V

Output voltage VO2 (V)

Output voltage VO1 (V)

5.00

Vdif1 (V)

3.50

5.10

0.1

0.2

0.3

0.4

Output current IO1 (A)

0.05

0.10

0.15

0.20

0.2

Output current IO2 (A)

GND Current

0.4

0.6

Output current IO1 (A)

Overcurrent Protection Characteristics (V01)

Overcurrent Protection Characteristics (V02)

IO1=0.4A

20

IO1=0.2A
IO1=0A

10

20

30

VIN =6V
10V
14V
18V
2

40

Output voltage VO2 (V)

4
Output voltage VO1 (V)

GND current IGND (mA)

40

Input voltage VIN (V)

0.5

1.0

0.2

0.4

0.6

Output current IO2 (A)

EN Terminal Output Voltage

TaPD Characteristics

IO1=5mA

0
120

140

160

180

Ambient temperature Ta (C)

200

Power dissipation PD (W)

40
Output voltage VO1 (V)

Output voltage VO1 (V)

Output current IO1 (A)

Thermal Protection Characteristics

100

VIN =6V
10V
14V
18V

EN terminal voltage VEN (V)

30

Infinite heatsink equivalent


(Tc=25C)

20

10

Copper foil area


(5.07.4mm, t=1m)

0
-40

25

50

85

125 150

Operating temperature Ta (C)

19

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006

External Dimensions (unit: mm)

Features
Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A)
Power on reset function
Watchdog timer
Built-in drooping type overcurrent and thermal protection circuits (ch1)

12.20.2

(Ta=25C)

Ratings

Unit

Remarks

13 to 35

Reverse connection 1 min max.

Vo1, Vo2 output control terminal voltage

EN

0.3 to 35

Vo2 output control terminal voltage

VC

0.3 to 35

CH1

Io1

0.4

CH2

Io2

0.2

TC terminal input voltage

8
+0.15

1.270.25

0.4 0.05

2.50.2

VIN2

Output current

+0.2

VIN1

DC input voltage

Fin
thickness

2.0 0.8

Symbol

1.0 0.05
9

7.50.2

Absolute Maximum Ratings


Parameter

+0.1

10.50.2
16

+0.15

0.250.05

TC

CK terminal input voltage

CK
0.3 to 7

W/D/C terminal input voltage

W/D/C

Reset terminal output voltage

RESET

Standard Connection Diagram

P D1

Power dissipation

18.6

P D2

2.97

Tj

40 to 150

Junction temperature

With an infinite heatsink mounted.


D1

*1

Vin1

EN
Vin2

Operating temperature

Top

40 to 105

Storage temperature
Thermal resistance
(junction to case)

Tstg

40 to 150

j-c

6.7

C/W

With an infinite heatsink mounted.

C/W

*1

Thermal resistance
(junction to ambient air)

42

j-a

Battery

Cin

Vc

Vo1
3Pin

4Pin

2Pin

14Pin

6Pin

SFP3006 7Pin

5Pin
1,9,
12,13Pin

GND

RESET

Rtc
Co1

Vo2
8Pin
10Pin 11Pin

Tc
W/D/C

CK

Load

Ctc

D2

Notes: *1: With glass epoxy + copper foil board (size 5.0 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18m)
* The regulator IC may be used only
with Vo1 (single output power
supply) by selecting NC (open) for
5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2.

Load

Co2

Electrical Characteristics
Parameter

Symbol

Input voltage
Output voltage
Dropout voltage
Ripple rejection

max
35

CH1

Vo1

4.85

5.00

5.15

CH2

Vo2

4.85

5.00

5.15

CH1

VDIF1

0.5

CH2

VDIF2

0.5

CH1

RREJ1

54

CH2

RREJ2

54

Iq
IGND

10

mA

70

100

mA

Is21

0.201

0.8

CH1

Is21

0.402

1.8

CH2

Is22

0.201

0.8

VENth

0.9

3.5

IENL

Reset terminal LOW voltage

VRSL

Reset terminal HI voltage

VRSH

Reset detect voltage

CH

50
1.0

1.0
0.5

Vo1-0.8V

Vo1thH

Vo1 0.97

VIN1 = 6 to 18V, Io = 0 to 0.3A

f = 100 to 120Hz
VIN1 = 16V, VEN = 0V
VIN1 = 35V, VEN = 0V

(2 Pin)

A
V

Isink = 250A
(Pull-up resistance 20k typ)

Isource = 15A

Vrs

4.5V
0.8V

0.93 Rtc Ctc 1.03 Rtc Ctc 1.13 Rtc Ctc

Min. set time: 4mS

0.07 Rtc Ctc 0.13 Rtc Ctc 0.19 Rtc Ctc

Min. set time: 400S

IckL

1.0

3.0

V
A

1.0

Min. clock pulse time: 5s (Duty 50%)


VCK = 5V
VCK = 0V

1.0

IcH

Vc output control current


W/D/C terminal control voltage
W/D/C terminal control
current

Vcth

3.5

300

IcL

1.0

1.0

Vw/d/cth

1.0

3.0

200

ON

Iw/d/cH

OFF

Iw/d/cL

1.0

1.0

20

TC

CK

(8 Pin)

(10 Pin)

Timing Chart
Vin1,
Vin2
(+B)
EN

ENthL

ENthH
Vo1thH

Vo1thL

Vo

Vc = 0V

Vo2

VW/D/C = 5V

RESET

VW/D/C = 0V

CK

(Main power supply)

TC

Notes:
*2: Refer to Dropout Voltage.
*3: Since PD (max) = (VINVO1) IO1+ (VIN2VO2) IO2 + (VIN Iq) = 22W, VIN (max), IO1(max) and I O2(max) may be limited
depending on operating conditions.
*4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits.
*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151
C (min.) and 165C (typ). These values represent the design warranty.

(11 Pin)

(1,9,12,13 Pin)

(BACK UP power supply)

Vc = 5V

W/D/C

GND

Vo1

Vc output control voltage

Drive2
OCP2

*4

t wd

200

(7 Pin)

(5 Pin)

EN = 0V

t wdp

OFF

(14 Pin)

Vo2
Vc
(Vo2: EN)

Vc

W/D pulse time

1.0

Err.

D
E
T

RESET

(6 Pin)

EN = 5V

W/D time

IckH

Err.

Vo1
RESET
W/D

Vin2

Min. set time: 6mS

Vckth

Drive1
OCP1

D
E
T

Vo2 = 0V

Vrs

ON

EN
TSD

EN

Vo1 = 0V

CK terminal control
current

(4 Pin)

(3 Pin)

Vo2 = 4.5V

CK terminal control voltage

Vo1

Vin1

Vo1 = 4.5V

1.18 Rtc Ctc 1.26 Rtc Ctc 1.35 Rtc Ctc

4.05

Circuit Block Diagram

Io1 = Io2 = 0.2A

t dly

Vo1thL
Power on reset delay time

Cin: Capacitor (39F) for oscillation prevention


CO1: Output capacitor (39F)
CO2: Output capacitor (39F)
Tantalum capacitors are recommended particularly for low
temperatures (tantalum capacitors of about 0.47 F in parallel).
D1, D2: Protection diodes.
Required for protection against reverse biasing between input
and output (Recommended diode: SANKEN EU2Z).

50

CH2

Conditions

* 2, 3
VIN2 = 6 to 18V, Io = 0 to 0.3A

250

1.8

OFF

50

0.402

IENH

10

Is11

ON

Unit

db

CH1

EN output control voltage


EN output control
current

Ratings
typ

Vo1+VDIF1

GND current

Residual current
at a short

min

VIN1, 2

Quiescent circuit current

Overcurrent protection
starting current

W/D/C

tdly

twd
twdp

W/D OFF
mode

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006

Electrical Characteristics
Rise Characteristics of Output Voltage (V01)

Rise Characteristics of Output Voltage (V02)

IO1=0A
0.2A
0.4A
2

5.10

IO2 =0A
0.2A
0.4A
2

0
0

10

5.05

5.05

5.05

5.00

IO1=0A
0.1A
0.2A
4.95

4.90
15

20

25

5.00

VIN =6V
10V
14V
18V

4.95

4.90

30

Output voltage VO2 (V)

5.10

10

10

0.1

Input voltage VIN (V)

0.2

0.3

0.05

0.10

0.15

0.20

Overcurrent Protection Characteristics (V01)


6

Output voltage VO1 (V)

Vdif2 (V)
Dropout voltage

0.2

30

Output current IO2 (A)

0.6

0.4

25

VIN =6V
10V
14V
18V

4.95

4.90

0.4

Dropout Voltage (V02)

0.6

20

5.00

Output current IO1 (A)

Dropout Voltage (V01)

15

Load Regulation (V02)

5.10

Input voltage VIN (V)

5.10

IO1=0A
0.2A
0.4A

4.95

10

Load Regulation (V01)

Output voltage VO1 (V)

Output voltage VO2 (V)

5.00

Input voltage VIN (V)

Line Regulation (V02)

Vdif1 (V)

5.05

4.90
0

Input voltage V IN (V)

Dropout voltage

Output voltage VO1 (V)

Line Regulation (V01)

Output voltage VO2 (V)

Output voltage VO1 (V)

0.4

Ta=150C
25C
40C

0.2

VIN =6V
10V
14V
18V
2

Ta=150C
25C
40C
0

0.2

0.4

0.1

Output current IO1 (A)

0.2

Output current IO2 (A)

Overcurrent Protection Characteristics (V02)

0
0

0.2

0.4

Output current IO2 (A)

0.6

Power dissipation PD (W)

Output voltage VO1 (V)

Output voltage VO2 (V)

16

0.8

20

IO1=5mA

VIN =6V
10V
14V
18V

0.6

TaPD Characteristics

0.4

Output current IO1 (A)

Thermal Protection Characteristics

0.2

0
100

125

150

175

Ambient temperature Ta (C)

200

Infinite heatsink
equivalent
(Tc=25C)

12

0
-50

Copper foil area


(5.07.4mm, t=18m)

50

100

150

Operating temperature Ta (C)

21

Switching Type Regulator ICs SI-3201S

External Dimensions (unit: mm)

Features
Output current of 3A (Ta = 25C, VIN = 8 to 18V)
High efficiency of 82% (VIN = 14V, I O = 2A)
Requires 5 external components only
Built-in reference oscillator (60kHz)
Phase internally corrected
Output voltage internally corrected
Built-in overcurrent and thermal protection circuits
Built-in soft start circuit

3.2 0.2

4.2 0.2
2.8 0.2

(17.9)

16.9 0.3

7.9 0.2

4.0 0.2

0.5

10.0 0.2

2.6 0.1

5.0 0.6

(2.0)

0.95 0.15

Symbol

Ratings

Unit

+0.2

Input voltage

VIN

35

Output voltage

IO

0.85 0.1

Conditions

(8.0)

Parameter

(Ta=25C)

(4.6)

Absolute Maximum Ratings

+0.2
0.1

0.45

SWOUT terminal voltage

VSWOUT

PD1

22

1.8

Tj

40 to +150

Storage temperature

Tstg

40 to +125

Junction to case thermal resistance

j-c

5.5

C/W

Junction to ambient-air thermal


resistance

j-a

66.7

C/W

Output current
Operating temperature

a: Part No.
b: Lot No.

(Forming No. 1101)

Standard Circuit Diagram

VIN

SI-3201S

VIN

VIN

typ

max
18

Unit

Conditions

IO

0.5

Top

40

+85

C1

D1

5 SS
h

C3

TaPD characteristics

VO

SWOUT

b
d

L1

SW Tr

a
c

Ratings

Symbol
min

Input voltage

Stand-alone

Recommended Operating Conditions


Parameter

1. VIN
2. SWOUT
3. GND
4. VS
5. SS

With infinite heatsink


1

PD2

(4.3)

8.2 0.7

Power Dissipation
Junction temperature

3.9 0.7

P1.7 0.7 4 = 6.8 0.7

GND

VS

C2

3
GND

Electrical Characteristics
Parameter
Output voltage

(VIN = 14V, I OUT = 2A, Tj = 25C unless otherwise specified)

Ratings

Symbol
min

typ

max

4.80

5.00

Unit

Conditions

5.20

Line regulation

VO LINE

100

mV

VIN = 8 to 18V

Load regulation

VO LOAD

50

mV

IO = 0.5 to 3A

VO

Efficiency *1
Oscillation frequency

82
f OSC

Quiescent circuit current

Iq

Overcurrent protection starting


current

IS

Soft *3
start
terminal

Low level voltage

VSSL

Source current when low

I SSL

Discharge resistance

RDIS

50

60

70

kHz

10

mA

3.1

15

25
200

IO = 0A

*2

0.2

35

VSSL = 0.2V

VIN = 0V

Notes:
*1. Efficiency is calculated by the following equation:
VO I O
=
100 (%)
VIN I IN
*2. A dropping-type overcurrent protection circuit is built in the IC.
*3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the
soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open
when not using it since it is already pulled up in the IC.

GND

C1: 1000F
C2: 1000F

L 1: 250H
D1: RK46 (Sanken)

a: Internal power supply


b: Thermal protection
c: Reference oscillator
d: Reset
e: Latch & driver

f : Comparator
g: Overcurrent protection
h: Error amplifier
i : Reference voltage

Cautions:
(1) A high-ripple current flows through C1 and C2. Use high-ripple
type 1000F or higher capacitors with low internal resistance.
Refer to the respective data books for more information on
reliability and electrical characteristics of the capacitor.
(2) C3 is a capacitor used for soft start.
(3) L1 should be a choke coil with a low core loss for switching
power supplies.
(4) Use a Schottky barrier diode for D1 and make sure that the
reverse voltage applied to the 2nd terminal (SWOUT terminal) is
within the maximum ratings (1V). If you use a fast-recovery
diode, the recovery voltage and the ON forward voltage may
cause a reversed-bias voltage exceeding the maximum ratings
to be applied to the 2nd terminal (SWOUT terminal). Applying a
reversed-bias voltage exceeding the maximum rating to the
2nd terminal (SWOUT terminal) may damage the IC.
(5) The 4th terminal (VS) is an output voltage detection terminal.
Since this terminal has a high impedance, connect it to the
positive (+) terminal of C2 via the shortest possible route.
(6) Leave the 5th terminal (soft start terminal) open when not
using it. It is pulled up internally.
(7) To ensure optimum operating environment, connect the highfrequency current line with minimum wiring length.

SI-3201S
5

SS
C3

22

SI-3201S
5

SS

SI-3201S
5

SS
C3

Switching Type Regulator ICs SI-3201S

Electrical Characteristics
Load Regulation

5.10

5.00

Output voltage VO (V)

Io = 0A
= 1A
= 2A
= 3A

4.95

4.90

5.10

5.05
5.00

VIN =18V
= 10V
= 7V

4.95
4.90
4.85

4.85
0

10

15

20

25

30

35

0.5

Input voltage VIN (V)

80

5
Output voltage VO (V)

(%)
Efficiency

1.0

1.5

2.0

2.5

V IN = 18V
= 10V
= 7V

60

50

40
1.5

2.0

2.5

3.0

Output current IO (A)

10

Overcurrent Protection Temperature Characteristics


6
5

VIN =18V
= 10V
= 7V

4
3
2

TC = +100, 25, --20C

3
2
1
0

0
1.0

Input voltage VIN (V)

0.5

3.0

Overcurrent Protection Characteristics

90

Output current IO (A)

Efficiency Curve

70

Io = 0A
= 1A
= 2A
= 3A

Output voltage VO (V)

Output voltage VO (V)

5.05

Rise Characteristics

5.15

Output voltage VO (V)

Line Regulation

1.0

2.0

3.0

Output current IO (A)

4.0

5.0

1.0

2.0

3.0

4.0

5.0

Output current IO (A)

Ta PD Characteristics
25

With silicone grease


Heatsink: aluminum

Power Dissipation PD (W)

With infinite heatsink

20

15

10

0
40

40

80

120

160

Operating temperature Ta (C)

23

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04

External Dimensions (unit: mm)

Features

1.0 0.3

Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
Low saturation PNP transistor use
Allows direct driving using LS-TTL and C-MOS logic levels
Built-in overcurrent protection circuits
Built-in protection against reverse connection of power supply
Tj = 150C guaranteed
Surface-mount full-mold package

0.89 0.15 2.54 0.25

0.25

+0.15

0.75 0.05

+0.15

a
b
Pin 1

Power supply voltage

VB

13 to +40

Drive terminal applied voltage

VD

0.3 to VB

Input terminal voltage

VIN

0.3 to +7.0

DIAG output applied voltage

VDIAG

0.3 to +7.0

DIAG output source current

IDIAG

mA

Voltage across power supply


and drive terminal

VBD

VB 0.4

Output current

IO

1.5

Power dissipation

PD

2.6

Junction temperature

Tj

40 to +150

Operating temperature

TOP

40 to +100

Storage temperature

Tstg

40 to +150

19.56 0.2

Conditions
3.6 0.2

Unit

1.4 0.2

Ratings

20.0max

(Ta=25C)

Symbol

4.0max

Parameter

6.8max

6.3 0.2
8.0 0.5
0 to 0.15

9.8 0.3

3.0 0.2

16

0.3 0.05

Absolute Maximum Ratings

SMD-16A

a: Part No.
b: Lot No.

Equivalent Circuit Diagram


Without heatsink, all circuits operating

The MIC is bound by the dotted lines.

9,12,16

IN1

Drive

CONT.
11k typ.

DIAG1

O.C.P

DIAG DET.

Electrical Characteristics

VB 2

Pre. Reg.

(VBopr =14V, Ta=25C unless otherwise specified)

1,15
14

T.S.D

Out1 2

D1 1

Ratings
Parameter

Symbol

Operating power supply voltage

VBopr

min

typ

max
16

6.0

Unit

Conditions
IN2
DIAG2

Quiescent circuit current

Iq

Threshold input voltage

VINth

5
0.8

I IN

Hi output

12

mA

3.0

1.0

mA

Input current

A
V

Output terminal sink current

IO (off)

2.0

mA

Saturation voltage of DIAG output

VDL

0.3

IDIAG = 3mA

100

VDIAG = 5V

30

IDGH

Open load detection resistor

Ropen

IS

1.6

Overcurrent protection starting


current

VIN = 0V
IO 1.0A, VBopr = 6 to 16V
VO = 0V, VIN = 0V

VO = VBopr 1.9V

TON

30

IO = 1A

TOFF

15

30

IO = 1A

TPLH

10

30

IO = 1A

TPHL

15

30

IO = 1A

Output transfer time

DIAG output transfer time

Out2

*2

D2 1

*2

VIN = 5V

0.5

Leak current of DIAG output

8,10
11

100

O.C.P

DIAG DET.

4,5,13

VCE (sat)

I IN

Drive

CONT.

Lo output

Saturation voltage of output


transistor

Lo output

11k typ.

GND

[Abbreviations]
Drive: Drive circuit
CONT: ON/OFF circuit
Pre.Reg: Pre-regulator

DIAG.DET.: Diagnostic circuit


O.C.P.: Overcurrent protection
T.S.D.: Thermal protection

*1. The base terminal (D terminal) is connected to the output


transistor base. It is also connected to the control monolithic
IC. Do not, therefore, apply an external voltage in operation.
*2. SDH04 have two or three terminals of the same function (VB,
Out1, Out 2, GND). The terminals of the same function must be
shorted at a pattern near the product.

Standard Circuit Diagram


VB
PZ

Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute
(all terminals except, VB and GND, are open).

D1
Out

SDH04
IN

Diagnostic Function

VCC
DIAG

GND

Load

5.1k
VB
3.0V

GND

GND

VIN

0.8V

Truth table
VIN
VO

VOUT
SHORT
Is

OPEN OPEN

OVER
VOLTAGE

GND

TSD

Note 1: A pull-down resistor (11 k typ.) is connected to the IN terminal.


VOUT turns "L" when a high impedance is connected to the IN terminal in
series.

IO

GND VDIAG
Normal

24

Shorted load

Open load

Overvoltage

Overheat

ERROR SIGNAL for CPU

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04

Electrical Characteristics
Quiescent Circuit Current (dual circuit)

Circuit Current (single circuit)

VIN = 0V

20

50

20

IB (mA)

30
125C
20
VIN = 0V

10

VO shorted
VO open
10

Ta =
40C

60

25C

40

125C

20
VIN = 0V

30

40

0
0

46

10

20

VB (V)

Saturation Voltage of Output Transistor

30

40

0
0

46

20

30

40

46

VB (V)

Overcurrent Protection Characteristics (Ta=40C)

Overcurrent Protection Characteristics (Ta=25C)


20

20
Ta =
125C

VB = 16V
VB = 6V

10

VB (V)

1.5

VB =
18V

15

VB =
18V

15

25C

VO (V)

1.0

VO (V)

VCE (sat) (V)

80
25C

10

0
0

VIN = 5V

100

Ta =
40C

40

IB (mA)

Iq (mA)

Ta = 40C
25C
125C

Circuit Current (dual circuit)


VIN = 5V

14V

10

14V

10

0.5
40C

6V

6V
0

IO (A)

IO (A)

Overcurrent Protection Characteristics (Ta=125C)

Threshold Characteristics of Input Voltage


Ta = 125C

Input Terminal Source Current

VB = 14V IO = 1A

15

20

IO (A)

25C

VB = 14V

1.0

40C

VB =
18V

0.8

15

IIN (mA)

VO (V)

VO (V)

10
14V
10

0.6
Ta = 125C
25C
40C

0.4

5
5

0.2

6V

IO (A)

VIN (V)

Input Terminal Sink Current

10

VIN (V)

Saturation Voltage of DIAG Output

VB = 14V VIN= 0V

1.0

0.3
VB = 14V
IDIAG = 3mA

VDL (V)

IINL (A)

0.2
0.5

0.1

0
50

50

Ta (C)

100

150

0
50

50

100

150

Ta (C)

25

High-side Power Switch ICs [With Diagnostic Function] SI-5151S

External Dimensions (unit: mm)

Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
Low saturation PNP transistor use
Allows direct driving using LS-TTL and C-MOS logic levels
Built-in overcurrent and thermal protection circuits
Built-in protection against reverse connection of power supply
TO220 equivalent full-mold package not require insulation mica

4.2 0.2

3.2 0.2
10 0.2

16.9 0.3

4 0.2

7.9 0.2

2.8 0.2

20 max

Features

2.6 0.1

Symbol

0.94 0.15

(Ta=25C)

Ratings

Unit

Power supply voltage

VB

40

Input terminal voltage

VIN

0.3 to VB

DIAG terminal voltage

VDIAG

R-end

Conditions

+0.2

+0.2

0.45 0.1

0.85 0.1

P1.7 0.1 4 = 6.8

VCE

40

IO

1.8

PD1

18

With infinite heatsink (Tc = 25C)

PD2

1.5

Stand-alone without heatsink


(Tc = 25C)

Junction temperature

Tj

40 to +125

Operating temperature

TOP

40 to +100

Storage temperature

Tstg

40 to +125

Collector-emitter voltage
Output current

Power Dissipation

3.6 0.5

Parameter

2.9 0.3

Absolute Maximum Ratings

+0.2

4 0.6

1. GND
2. VIN
3. VO
4. DIAG
5. VB

a: Part No.
b: Lot No.

(Forming No. 1123)

Standard Circuit Diagram


VB
5

Electrical Characteristics
Symbol

Operating power supply voltage

VBopr

Quiescent circuit current

min

VCE (sat)

Output leak current

IO, leak

typ

6.0

Iq

Saturation voltage of output


transistor

VO

(Ta=25C unless otherwise specified)

Ratings

max

Unit

SI-5151S

Conditions
VIN 2

30

12

mA

0.5

1.0

mA
V

VBopr = 6 to 16V
VBopr = 6 to 16V

LS-TTL
or
CMOS

IO 1.0A, VBopr = 6 to 16V

VCC

DIAG
4

VBopr = 14V, VIN = 0V

PZ

5.1k

Load

Parameter

IO 1.8A, VBopr = 6 to 16V


VCEO = 16V

Output ON

VIH

2.0

VB

Output OFF

VIL

0.3

0.8

Output ON

I IH

mA

VIN = 5V
VIN = 0V

GND

Truth table
VIN
VO

Input voltage

Input current
Output OFF

I IL

0.1

mA

Overcurrent protection starting


current

IS

1.9

Thermal protection starting


temperature

TTSD

125

Open load detection resistor

Ropen

VBopr = 14V, VO = VBopr 1.5V

Diagnostic Function
C

145
30

VBopr = 6 to 16V

TON

30

VBopr = 14V, IO = 1A

TOFF

15

30

VBopr = 14V, IO = 1A

Output transfer time


6

VCC = 6V

VDL

0.3

VCC = 6V, IDD = 2mA

TPLH

30

VBopr = 14V, IO = 1A

TPHL

30

VBopr = 14V, IO = 1A

VDH

4.5

DIAG output voltage

DIAG output transfer time


Minimum load inductance

Normal

Shorted load

Overheat

Normal

VIN
VO
DIAG

mH
VO
VIN
DIAG
L
L
L
H
H
H
L
H
H
Open load
H
H
H
L
L
L
Shorted load
H
L
L
L
L
L
Overheat
H
L
L
DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.

Mode

Note:
* The rule of protection against reverse connection of power supply is VB = 13V, one minute
(all terminals except, VB and GND, are open).

26

Open load

Normal

High-side Power Switch ICs [With Diagnostic Function] SI-5151S

Electrical Characteristics
Quiescent Circuit Current

Circuit Current

10

Saturation Voltage of Output Transistor


1.0

40
Ta = --40C

30

25C

--40C

20

VCE (sat) (V)

95C

IB (mA)

Iq (mA)

Ta = 25C
Ta = 95C

V B=
6 to 16V
95C

0.5

--40C

10
25C

0
0

10

20

30

40

0
0

10

20

VB (V)

50

14

14
VB =
14V

12

10

VO (V)

VO (V)

0
0

IO (A)

IO (A)

Input Current (Output ON)

20

Input Current (Output OFF)


2

1.0

15

IO (A)

Threshold input voltage


Ta =
95C

VB =
14V

12

10

10

16

14
VB =
14V

Overcurrent Protection Characteristics (Ta=100C)

16

12

IO (A)

Overcurrent Protection Characteristics (Ta=25C)

16

VO (V)

40

VB (V)

Overcurrent Protection Characteristics (Ta= 40C)

VIN = 0V
VB = 14V

VIN = 5V
VB = 14V

25C 40C

10

IIL (A)

VB = 16V
I O = 1A

IIH (mA)

VO (V)

30

0.5

0
40

0
0

2.2

50

VIN (V)

Ta (C)

Saturation Voltage of DIAG Output

50

100

Ta (C)

16
VB = 14V

Vo

14

0.1

12

10

DIAG (V)

VO (V)

VDG (sat) (V)

0
40

Thermal Protection Characteristics

0.2

8
6

0
40

100

DIAG
VB = 14V
IO = 10mA

4
3

0
0

50

Ta (C)

100

50

100

150

Ta (C)

27

High-side Power Switch ICs [With Diagnostic Function] SI-5152S

External Dimensions (unit: mm)

Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
Low saturation PNP transistor use
Allows direct driving using LS-TTL and C-MOS logic levels
Built-in overcurrent and thermal protection circuits
Built-in protection against reverse connection of power supply
Tj = 150C guaranteed
TO220 equivalent full-mold package not require insulation mica

4.2 0.2

3.2 0.2
10 0.2

16.9 0.3

4 0.2

7.9 0.2

2.8 0.2

20 max

Features

2.6 0.1

a
2.9 0.3

+0.2

0.94 0.15

Parameter

R-end

(Ta = 25C)

Symbol

Ratings

Unit

Power supply voltage

VB

40

Input terminal voltage

VIN

0.3 to VB

DIAG terminal voltage

VDIAG

VCE

40

Conditions

+0.2

+0.2

0.45 0.1

0.85 0.1

Collector-emitter voltage
Output current

P1.7 0.1 4 = 6.8

4 0.6

1. GND
2. VIN
3. VO
4. DIAG
5. VB

IO

1.8

PD1

22

With infinite heatsink (Tc=25C)

PD2

1.8

Stand-alone without heatsink

Junction temperature

Tj

40 to +150

Operating temperature

TOP

40 to +100

Storage temperature

Tstg

40 to +150

3.6 0.5

Absolute Maximum Ratings

a: Part No.
b: Lot No.

(Forming No. 1123)

Power Dissipation

Standard Circuit Diagram


VB
5
VO

(Ta=25C unless otherwise specified)

SI-5152S

Ratings
Parameter

Symbol

Operating power supply voltage

VBopr

Quiescent circuit current

min
6.0

Iq

Saturation voltage of output


transistor

VCE (sat)

Output leak current

IO, leak

typ

max

Unit

30

12

mA

0.5

1.0

mA

Conditions

VIN 2

VCC

DIAG
4

VBopr = 14V, VIN = 0V

PZ

LS-TTL
or
CMOS

5.1k

Load

Electrical Characteristics

IO 1.0A, VBopr = 6 to 16V


IO 1.8A, VBopr = 6 to 16V

Output ON

VIH

2.0

VB

VBopr = 6 to 16V

Output OFF

VIL

0.3

0.8

VBopr = 6 to 16V

Output ON

I IH

mA

VIN = 5V
VIN = 0V

GND

Truth table
VO

VCEO = 16V, VIN = 0V

VIN

Input voltage

Input current
Output OFF

I IL

0.1

mA

Overcurrent protection starting


current

IS

1.9

VBopr = 14V, VO = VBopr 1.5V

Thermal protection starting


temperature

TTSD

150

VBopr 6V

VBopr = 6 to 16V

Open load detection resistor

Normal

Ropen

30

TON

30

VBopr = 14V, IO = 1A

TOFF

15

30

VBopr = 14V, IO = 1A

IDIAG

100

VCC = 6V, VBopr = 6 to 16V

VDL

0.3

VCC = 6V, VBopr = 6 to 16V, IDO = 2mA

TPLH

30

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

Output transfer time


DIAG output leak current
Saturation voltage of DIAG output
DIAG output transfer time
TPHL
Minimum load inductance

Diagnostic Function

30
1

mH

Open load

Overheat

Normal

VO
DIAG

Mode
Normal

Note:
* The rule of protection against reverse connection of power supply is VB = 13V, one minute
(all terminals except, VB and GND, are open).

Shorted load

VIN

Open load
Shorted load
Overheat

VIN
L
H
L
H
L
H
L
H

VO
L
H
H
H
L
L
L
L

DIAG
L
H
H
H
L
L
L
L

DIAG output will be undetermined when a voltage


exceeding 25V is applied to VB terminal.

28

High-side Power Switch ICs [With Diagnostic Function] SI-5152S

Electrical Characteristics
Quiescent Circuit Current

Circuit Current

10

Saturation Voltage of Output Transistor


1.0

40
Ta = 40C

30
40C
95C

25C

20

VCE (sat) (V)

IB (mA)

Iq (mA)

Ta = 25C
Ta = 95C

VB =
6 to 16V
95C

0.5

40C

10
25C

0
0

10

20

30

40

0
0

10

20

VB (V)

Overcurrent Protection Characteristics (Ta = 40C)

16

16

14

14
VB =
14V

12

VO (V)

VO (V)

10

0
0

0
0

IO (A)

Input Current (Output OFF)


2

1.0

15

IO (A)

Input Current (Output ON)

20

Ta =
95C

IO (A)

Threshold input voltage

VB =
14V

12

10

Overcurrent Protection Characteristics (Ta=100C)

VB =
14V

Overcurrent Protection Characteristics (Ta=25C)

10
VO (V)

50

IO (A)

14

VIN = 0V
VB = 14V

VIN = 5V
VB = 14V

25C 40C

10

IIL (A)

VB = 16V
IO = 1A

IIH (mA)

VO (V)

40

VB (V)

16

12

30

0.5

0
0

2.2

VIN (V)

0
40

50

Ta (C)

100

0
40

50

100

Ta (C)

Saturation Voltage of DIAG Output


0.2

VDL (V)

VB = 14V

0.1

0
40

50

100

Ta (C)

29

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S

External Dimensions (unit: mm)

Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
Low saturation PNP transistor use
Allows direct driving using LS-TTL and C-MOS logic levels
Built-in overcurrent and thermal protection circuits
Built-in protection against reverse connection of power supply
Tj = 150C guaranteed
Built-in Zener diode
TO220 equivalent full-mold package not require insulation mica

4.2 0.2

3.2 0.2
10 0.2

16.9 0.3

4 0.2

7.9 0.2

2.8 0.2

2.6 0.1

a
2.9 0.3

+0.2

20 max

Features

0.94 0.15

R-end

Parameter

(Ta=25C)

Symbol

Ratings

Unit

VB

13 to +40

Input terminal voltage

VIN

0.3 to VB

DIAG terminal voltage

VDIAG

VCE

VB VZ

IO

2.04

PD1

22

With infinite heatsink (Tc=25C)

PD2

1.8

Stand-alone without heatsink

Tj

40 to +150

Operating temperature

TOP

40 to +100

Storage temperature

Tstg

40 to +150

Power supply voltage

Collector-emitter voltage
Output current

+0.2

+0.2

0.45 0.1

0.85 0.1

Conditions

P1.7 0.1 4 = 6.8

4 0.6

1. GND
2. VIN
3. VO
4. DIAG
5. VB

Refer to "Surge clamp voltage"


in Electrical Characteristics

3.6 0.5

Absolute Maximum Ratings

a: Part No.
b: Lot No.

(Forming No. 1123)

Power Dissipation
Junction temperature

Standard Circuit Diagram


VB
5
VO

SI-5153S
(Ta=25C unless otherwise specified)

VIN 2

Ratings
Parameter

Symbol

Operating power supply voltage

VBopr

min
6.0

Iq

Quiescent circuit current

typ

max

Unit

30

12

mA
V

Saturation voltage of output


transistor

VCE (sat)

0.47

Output leak current

IO, leak

mA

Conditions
LS-TTL
or
CMOS

5.1k

VBopr = 14V, VIN = 0V


IO 2.05A, VBopr = 6 to 16V

Output ON

VIH

2.0

VB

VBopr = 6 to 16V

Output OFF

VIL

0.3

0.8

VBopr = 6 to 16V

Output ON

I IH

mA

VIN = 5V

Output OFF

I IL

0.1

mA

VIN = 0V

Overcurrent protection starting


current

IS

2.05

VBopr = 14V, VO = VBopr 1.5V

Thermal protection starting


temperature

TTSD

150

VBopr 6V

30

VBopr = 6 to 16V

GND

Truth table
VIN
VO

VCEO = 16V, VIN = 0V

Input voltage
1

VCC

DIAG

Load

Electrical Characteristics

Input current

Open load detection resistor

Diagnostic Function
Normal

Open load

Shorted load

Overheat

Normal

VIN
Ropen
TON

30

VBopr = 14V, IO = 1A

TOFF

15

30

VBopr = 14V, IO = 1A

VCC = 6V, VBopr = 6 to 16V


VCC = 6V, VBopr = 6 to 16V, IDO = 2mA

Output transfer time


VDH

4.5

VO
DIAG

DIAG output voltage


VDL

0.3

TPLH

30

VBopr = 14V, IO = 1A

TPHL

30

VBopr = 14V, IO = 1A

DIAG output transfer time


Minimum load inductance
Surge clamp voltage

*1

VZ

28

mH
34

40

IC = 5mA

Note:
*1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse).
* The rule of protection against reverse connection of power supply is VB = 13V, one minute.
* This driver is exclusively used for ON/OFF control.

30

VO
VIN
DIAG
L
L
L
H
H
H
L
H
H
Open load
H
H
H
L
L
L
Shorted load
H
L
L
L
L
L
Overheat
H
L
L
DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.

Mode

Normal

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S

Electrical Characteristics
Quiescent Circuit Current

Circuit Current

10

Saturation Voltage of Output Transistor


2

50

40

Ta = 40C

25C

VCE (sat) (V)

IB (mA)

Iq (mA)

Ta =
40C
30
25C
20

150C

Ta =
125C

VB = 6 to 16V

150C

25C

10

0
0

10

20

0
0

40

30

40C

10

20

30

40

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta=40C)

Overcurrent Protection Characteristics (Ta =25C)

Overcurrent Protection Characteristics (Ta=125C)

20

20

20

VB =
18V

VB =
18V

VB =
18V
15

15

15

10

14V
10

8V

IO (A)

0.8

0.6

I IL (A)

I IH (mA)

10

VB = 14V
VIN = 0V

VB = 14V
VIN = 5V

VB = 16V
IO = 1A

Input Current (Output OFF)

1.0
Ta = 150C 25C 40C

IO (A)

Input Current (Output ON)

20

IO (A)

Threshold Characteristics of Input Voltage

15

10

8V

8V
5

VO (V)

VO (V)

VO (V)

VO (V)

14V
14V

0.4

5
0.2

0
50

VIN (th) (V)

50

100

0
50

150

Output Terminal Leak Current

VB = 14V
VDIAG = 5V
IO = 10mA
15

0.3

VO (V)

VDL (V)

IO leak (mA)

0.4

0.2

Ta (C)

100

150

0
50

VO

10

VDIAG

0.1

50

150

20

VB = 14V
IDIAG = 2mA

100

Thermal Protection Characteristics

0.5

VB = 14V

50

Ta (C)

Saturation Voltage of DIAG Output

0
50

Ta (C)

0
0

50

Ta (C)

100

150

50

100

150

200

Ta (C)

31

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S

External Dimensions (unit: mm)

Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
Low saturation PNP transistor use
Allows direct driving using LS-TTL and C-MOS logic levels
Built-in overcurrent and thermal protection circuits
Built-in protection against reverse connection of power supply
Tj = 150C guaranteed
Built-in Zener diode
TO220 equivalent full-mold package not require insulation mica

4.2 0.2

3.2 0.2
10 0.2

16.9 0.3

4 0.2

7.9 0.2

2.8 0.2

20 max

Features

2.6 0.1

a
2.9 0.3

+0.2

0.94 0.15

R-end

Absolute Maximum Ratings


Symbol

Ratings

Unit

VB

13 to +40

Input terminal voltage

VIN

0.3 to VB

DIAG terminal voltage

VDIAG

VCE

VB VZ

IO

2.5

PD1

22

With infinite heatsink (Tc =25C)


Stand-alone without heatsink

Power supply voltage

Collector-emitter voltage
Output current

+0.2

+0.2

Conditions

0.45 0.1

0.85 0.1

P1.7 0.1 4 = 6.8

4 0.6

1. GND
2. VIN
3. VO
4. DIAG
5. VB

Refer to "Surge clamp voltage" in


Electrical Characteristics

3.6 0.5

Parameter

(Ta=25C)

a: Part No.
b: Lot No.

(Forming No. 1123)

Power Dissipation
PD2

1.8

Junction temperature

Tj

40 to +150

Operating temperature

TOP

40 to +100

Storage temperature

Tstg

40 to +150

Standard Circuit Diagram


VB
5
VO

Electrical Characteristics

SI-5154S

(Ta=25C unless otherwise specified)


VIN 2

Ratings
Symbol

Operating power supply voltage

VBopr

min
6.0

Iq

Quiescent circuit current


Saturation voltage of output
transistor

VCE (sat)

Output leak current

IO, leak

Output ON

VIH

typ

2.0

max

Unit

Conditions

30

12

mA

0.3

IO 1.0A, VBopr = 6 to 16V

0.72

IO 2.5A, VBopr = 6 to 16V

mA

VB

LS-TTL
or
CMOS

VBopr = 14V, VIN = 0V

0.8

VBopr = 6 to 16V

GND

VBopr = 6 to 16V

Output OFF

VIL

Output ON

I IH

mA

VIN = 5V

Output OFF

I IL

0.1

mA

VIN = 0V

Overcurrent protection starting


current

IS

2.6

VBopr = 14V, VO = VBopr 1.5V

Thermal protection starting


temperature

TTSD

150

VBopr 6V

30

VBopr = 6 to 16V

5.1k

Truth table
VIN
VO

VCEO = 16V, VIN = 0V

Input voltage
0.3

VCC

DIAG

Load

Parameter

Input current

Open load detection resistor

Ropen
TON

30

VBopr = 14V, IO = 1A

TOFF

15

30

VBopr = 14V, IO = 1A

Output transfer time


6

VCC = 6V, VBopr = 6 to 16V

VDL

0.3

VCC = 6V, VBopr = 6 to 16V, IDO = 2mA

TPLH

30

VBopr = 14V, IO = 1A

TPHL

30

VBopr = 14V, IO = 1A

VDH

4.5

DIAG output voltage

DIAG output transfer time


Minimum load inductance
Surge clamp voltage

*1

VZ

28

mH
34

40

Normal

Open load

IC = 5mA

Shorted load

Overheat

VIN
VO
DIAG

Mode
Normal

Note:
*1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse).
* The rule of protection against reverse connection of power supply is VB = 13V, one minute.
* This driver is exclusively used for ON/OFF control.

32

Diagnostic Function

Open load
Shorted load
Overheat

VIN
L
H
L
H
L
H
L
H

VO
L
H
H
H
L
L
L
L

DIAG
L
H
H
H
L
L
L
L

DIAG output will be undetermined when a voltage


exceeding 25V is applied to VB terminal.

Normal

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S

Electrical Characteristics
Quiescent Circuit Current

Circuit Current

Ta= 40C
25C
150C

40

Ta =
40C

30

25C

20

VCE (sat) (V)

50

IB (mA)

Iq (mA)

10

Saturation Voltage of Output Transistor

150C

Ta =
125C

25C

VB = 6 to 16V
10

0
0

10

20

30

40C

0
0

40

10

20

30

40

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta= 40C)

Overcurrent Protection Characteristics (Ta=25C)

Overcurrent Protection Characteristics (Ta=125C)

20

20

20

VB =
18V
16

16

8V
4

8V

6V

IO (A)

6V

IO (A)

Threshold input voltage

I IH (mA)

10

VB = 14V
VIN = 0V

0.8

0.6

I IL (A)

15

VB = 14V
VIN = 5V

Ta = 125C 25C 40C

Input Current (Output OFF)

1.0

VB = 16V
IO = 1A

IO (A)

Input Current (Output ON)

20

VO (V)

12

8V
6V

14V

14V

12

VO (V)

14V

12

VO (V)

VO (V)

16

VB =
18V

VB =
18V

0.4

5
0.2

0
50

VIN (th) (V)

50

100

0
50

150

Output Terminal Leak Current

0.3

0.2

Ta (C)

150

0
50

VO

10

VDIAG

0.1

100

VB = 14V
VDIAG = 5V
IO = 10mA

15

VO (V)

VDL (V)

IO leak (mA)

0.4

50

150

20

VB = 14V
IDIAG = 2mA

100

Thermal Protection Characteristics

0.5

VB = 14V

50

Ta (C)

Saturation Voltage of DIAG Output

0
50

Ta (C)

0
0

50

Ta (C)

100

150

50

100

150

200

Ta (C)

33

High-side Power Switch ICs [With Diagnostic Function] SI-5155S

External Dimensions (unit: mm)

Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
Low saturation PNP transistor use
Allows direct driving using LS-TTL and C-MOS logic levels
Built-in overcurrent and thermal protection circuits
Built-in protection against reverse connection of power supply
Tj = 150C guaranteed
TO220 equivalent full-mold package not require insulation mica

4.2 0.2

3.2 0.2
10 0.2

16.9 0.3

4 0.2

7.9 0.2

2.8 0.2

20 max

Features

2.6 0.1

a
2.9 0.3

+0.2

0.94 0.15

Parameter

R-end

(Ta=25C)

Symbol

Ratings

Unit

Power supply voltage

VB

13 to +40

Input terminal voltage

VIN

0.3 to VB

DIAG terminal voltage

VDIAG

VCE

40

Conditions

+0.2

+0.2

0.45 0.1

0.85 0.1

Collector-emitter voltage
Output current

P1.7 0.1 4 = 6.8

4 0.6

1. GND
2. VIN
3. VO
4. DIAG
5. VB

IO

2.5

PD1

22

With infinite heatsink (Tc=25C)

PD2

1.8

Stand-alone without heatsink

Junction temperature

Tj

40 to +150

Operating temperature

TOP

40 to +100

Storage temperature

Tstg

40 to +150

3.6 0.5

Absolute Maximum Ratings

a: Part No.
b: Lot No.

(Forming No. 1123)

Power dissipation

Standard Circuit Diagram


VB
5
VO

(Ta=25C unless otherwise specified)

SI-5155S

Ratings
Parameter

Symbol

Operating power supply voltage

VBopr

Quiescent circuit current

min
6.0

Iq

Saturation voltage of output


transistor

VCE (sat)

Output leak current

IO, leak

typ

max

Unit

30

12

mA

0.3

0.72

mA

VIN 2

Conditions

LS-TTL
or
CMOS

VCC

DIAG
4

VBopr = 14V, VIN = 0V

PZ

5.1k

Load

Electrical Characteristics

IO 1.0A, VBopr = 6 to 16V


IO 2.5A, VBopr = 6 to 16V

Output ON

VIH

2.0

VB

VBopr = 6 to 16V

Output OFF

VIL

0.3

0.8

VBopr = 6 to 16V

Output ON

I IH

mA

VIN = 5V

Output OFF

I IL

0.1

mA

VIN = 0V

IS

2.6

VBopr = 14V, VO = VBopr 1.5V

TTSD

150

VBopr 6V

VBopr = 6 to 16V

GND

Truth table
VIN
VO

VCEO = 16V, VIN = 0V

Input voltage

Input current
Overcurrent protection starting
current
Thermal protection starting
temperature
Open load detection resistor

Ropen

30

TON

30

VBopr = 14V, IO = 1A

TOFF

15

30

VBopr = 14V, IO = 1A

VCC = 6V, VBopr = 6 to 16V

Output transfer time


VDH

4.5

Diagnostic Function
Normal

Open load

Shorted load

Overheat

VO
L
H
H
H
L
L
L
L

DIAG

Normal

VIN
VO

DIAG output voltage


VDL

0.3

VCC = 6V, VBopr = 6 to 16V, IDO = 2mA

TPLH

30

VBopr = 14V, IO = 1A

VBopr = 14V, IO = 1A

DIAG output transfer time


TPHL
Minimum load inductance

30
1

mH

Note:
* The rule of protection against reverse connection of power supply is VB = 13V, one minute
(all terminals except, VB and GND, are open).

DIAG

Mode
Normal
Open load
Shorted load
Overheat

VIN
L
H
L
H
L
H
L
H

L
H
H
H
L
L
L
L

DIAG output will be undetermined when a voltage


exceeding 25V is applied to VB terminal.

34

High-side Power Switch ICs [With Diagnostic Function] SI-5155S

Electrical Characteristics
Quiescent Circuit Current

Circuit Current

Ta= 40C
25C
150C

40

Ta =
40C

30

25C

20

VCE (sat) (V)

50

IB (mA)

Iq (mA)

10

Saturation Voltage of Output Transistor

150C

Ta =
125C

25C

VB = 6 to 16V
10

0
0

10

20

0
0

40

30

40C

10

20

30

40

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta= 40C)

Overcurrent Protection Characteristics (Ta=25C)

Overcurrent Protection Characteristics (Ta =125C)

20

20

20

VB =
18V
16

16

8V
4

8V

6V

6V

IO (A)

IO (A)

Threshold input voltage

10

0.8

0.6

I IL (A)

I IH (mA)

VB = 16V
IO = 1A

VB = 14V
VIN = 0V

VB = 14V
VIN = 5V

15

Input Current (Output OFF)

1.0
Ta = 125C 25C 40C

IO (A)

Input Current (Output ON)

20

VO (V)

12

8V
6V

14V

14V

12

VO (V)

14V

12

VO (V)

VO (V)

16

VB =
18V

VB =
18V

0.4

5
0.2

0
50

VIN (th) (V)

50

100

0
50

150

Output Terminal Leak Current

0.3

0.2

Ta (C)

150

0
50

VO

10

VDIAG

0.1

100

VB = 14V
VDIAG = 5V
IO = 10mA

15

VO (V)

VDL (V)

IO leak (mA)

0.4

50

150

20

VB = 14V
IDIAG = 2mA

100

Thermal Protection Characteristics

0.5

VB = 14V

50

Ta (C)

Saturation Voltage of DIAG Output

0
50

Ta (C)

0
0

50

Ta (C)

100

150

50

100

150

200

Ta (C)

35

High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M

External Dimensions (unit: mm)


31 0.2

Ellipse 3.2 0.15 3.8

4.8 0.2

24.4 0.2

1.7 0.1

16 0.2
9.9 0.2

3.2 0.15

12.9 0.2

Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
Low saturation PNP transistor use (VCE (sat) 0.2V)
Allows direct driving using LS-TTL and C-MOS logic levels
Built-in Zener diode in transistor eliminates the need of (or simplifies) external
surge absorption circuit
Built-in independent overcurrent and thermal protection circuit in each circuit
Built-in protection against reverse connection of power supply
Tj = 150C guaranteed

a
b

2.45 0.2

6.4 0.5

Features

+0.2

+0.2

+0.2

1.15 0.1

0.55 0.1

0.65 0.1

14 P2.03 0.1 = (28.42)

Absolute Maximum Ratings


Parameter
Power supply voltage

(Ta=25C)

Symbol

Ratings

Unit

VB

13 to +40

Drive terminal applied voltage

VD

0.3 to VB

Input terminal voltage

VIN

0.3 to +7.0

DIAG output applied voltage

VDIAG

0.3 to +7.0

DIAG output source current

IDIAG

mA

Voltage across power supply


and output terminal

VBO

VB 34

Voltage across power supply


and drive terminal

VBD

0.4

Conditions

31.3 0.2

a: Part No.
b: Lot No.

1 23

Output current

IO

1.5

Output reverse current

IO

1.8

15

Equivalent Circuit Diagram


VB

Electrostatic resistance

250

ES/A

C = 200pF, R = 0
Stand-alone without heatsink,
all circuits operating

Power Dissipation

PD

4.8

Junction temperature

Tj

40 to +150

Operating temperature

TOP

40 to +115

Storage temperature

Tstg

50 to +150

Electrical Characteristics
Symbol

Operating power supply voltage

VBopr

Quiescent circuit current (per circuit)


Circuit current (per circuit)

MIC

GND

Unit

16

Iq

0.8

1.6

mA

Lo output

IB

19.3

mA

Tj = 25C

VINth

0.8

VIN

3.7

Lo output

VIN

3.0

VB

VCC

V
1.5

I IN

1.0

Input current
Lo output

I IN
VCE (sat)

mA

VCE (sat)

1.0

Output terminal sink current

IO (off)

2.5

Surge clamp voltage

VBO

VIN = 5V

mA

Tj = 25C, VCEO = 14V

34

39

Tj = 25C, IC = 10mA

34

40

IC = 5mA
IDGH = 2mA, VBopr = 6 to 16V

Saturation voltage of DIAG output

VDL

0.4

Leak current of DIAG output

IDGH

100

Open load detection resistor

Ropen

5.5

Overcurrent protection starting


current

IS

1.6

VO = VBopr 1.5V

VBopr 6V

30

IO = 1A

100

IO = 1A

TPLH

30

IO = 1A

IO = 1A

Maximum ON duty

100

Lo

1.0

D(ON)

mH
60

SLA2501M

FLT2 8

Diagnostic Function

TON

TPHL
Minimum load inductance

FLT1
IN2

VCC = 7V

TOFF
DIAG output transfer time

3
9 14
D1 D2 D3

FLT3 13
GND1 GND2 OUT1 OUT2 OUT3
6
11 2
10
15

IO 1.5A, VBopr = 6 to 16V

28

1
VB
IN1

12 IN3

IO 1.2A, VBopr = 6 to 16V

29

TTSD

VIN = 0V

0.2

Output transfer time

36

100

Saturation voltage of output


transistor

Thermal protection starting


temperature

e: Overcurrent protection circuit


f: Diagnostic circuit
g: Thermal protection circuit

Standard Circuit Diagram

Input voltage
Hi output

FLT

a: Pre-regulator
b: Overvoltage protection circuit
c: Control circuit
d: Driver circuit

Conditions

max

Hi output

Threshold input voltage

OUT
D

typ

6.0

e
g

(VBopr =14V, Tj= 40 to +150C unless otherwise specified)

min

d
c

Ratings
Parameter

VIN

Note:
* The Zener diode has an energy capability of 200 mJ (single pulse).
* A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.

Normal

VIN
VO
VDIAG

Open load

Shorted load

Overheat

Normal

High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M

Electrical Characteristics
Quiescent Circuit Current (single circuit)

Circuit Current (single circuit)

Saturation Voltage of Output Transistor

40

1.0

VIN = 5V

VIN = 0V

V IN = 5V
V B = 6 to 16V

Ta = 40C

Ta = 25C

Ta =125C
VCE (sat) (V)

Ta =150C

30

Ta = 40C
Ta = 25C
Ta = 125C

IB (mA)

Iq (mA)

20

Ta = 125C

Ta = 40C
0.5

Ta = 25 C
10

0
0

10

20

30

40

10

20

30

40

3.5

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta= 40C)

Overcurrent Protection Characteristics (Ta=25C)

Overcurrent Protection Characteristics (Ta=125C)


20

20

20

0
1

VO (V)

10

10

I OUT = 1A

Input Current (Output OFF)


20

V B = 14V

V IN = 0V

V IN = 0V

IIL (A)

25C 40C

0.5

0
--50

50

100

10

0
50

125

Ta (C)

VIN (V)

Saturation Voltage of DIAG Output

Output Reverse Current

V B = 14V
VIN = 5V
I FLT = 3 (mA)

50

100

125

Ta (C)

Thermal Protection

1.4

0.3

IO (A)

VB = 14V

0
1

1.0

10

Input Current (Output ON)

IIH (mA)

VO (V)

Ta = 125C

IO (A)

Threshold Input Voltage


VB = 16V

10

IO (A)

20

VB = 14V

V B = 14V

VO (V)

VO (V)

VB = 14V

20

10

V B = 16V IO = 10mA

1.2

VO

1.0

0.1

Ta = 25C
0.6

Ta = 125C

10

VFLT (V)

Ta = --40C

0.8

VO (V)

VF (V)

VDL (V)

0.2

V FLT
5

0.4
0.2

0
50

50

Ta (C)

100

125

IF (A)

0
0

60

100

160

180

Ta (C)

37

High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M

External Dimensions (unit: mm)

Features
Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
Low saturation PNP transistor use (VCE (sat) 0.5V)
Allows direct driving using LS-TTL and C-MOS logic levels
Built-in overcurrent protection circuits
Built-in protection against reverse connection of power supply
Tj = 150C guaranteed

310.2

Ellipse 3.2 0.15 3.8

4.8 0.2

24.4 0.2

1.7 0.1

16 0.2
9.9 0.2

12.9 0.2

3.2 0.15

2.45 0.2

6.4 0.5

Absolute Maximum Ratings


Parameter

+0.2

(Ta=25C)

Symbol

Ratings

Unit

Power supply voltage

VB

13 to +40

Input terminal voltage

VIN

0.3 to +7.0

DIAG output applied voltage

VDIAG

0.3 to +7.0

DIAG output source current

IDIAG

mA

Output current

IO

1.2

Power Dissipation

PD

4.8

Junction temperature

Tj

40 to +150

Operating temperature

TOP

40 to +100

Storage temperature

Tstg

50 to +150

+0.2

1.15 0.1

+0.2

0.55 0.1

0.65 0.1

14 P2.03 0.1 = (28.42)

Conditions

31.3 0.2

a: Part No.
b: Lot No.

1 23

15

Stand-alone operation without


heatsink; all circuits operating

Equivalent Circuit Diagram


SLA2502M
The MIC is bound by the dotted lines.

VB

Pre. Reg.

Electrical Characteristics

NI1

(VBopr =14V, Ta=25C unless otherwise specified)

DIAG1

Drive

CONT.
11k typ.

O.C.P

DIAG DET

Parameter

Symbol

Operating power supply voltage

VBopr

min

typ

max
16

6.0

Unit

Conditions
NI2

Iq
VINth

Hi output

I IN

Lo output

I IN

5
0.8

12

mA

3.0

1.0

mA

VIN = 5V

100

VIN = 0V

Input current
0

VIN = 0V

Drive

CONT.
11k typ.

O.C.P

DIAG DET

GND1

10

Drive

CONT.
11k typ.

11

O.C.P

DIAG DET

VCE (sat)

Output terminal sink current


Saturation voltage of DIAG output

0.5

IO (off)

2.0

mA

VDL

0.3

IO 1.0A, VBopr = 6 to 16V


VO = 0V, VIN = 0V

NI4

100

Open load detection resistor

Ropen

30

Overcurrent protection starting


current

IS

1.6

VO = VBopr 1.9V

TON

30

IO = 1A

15

30

IO = 1A

TPLH

10

30

IO = 1A

TPHL

15

30

IO = 1A

DIAG output transfer time

Out3

Drive

CONT.
11k typ.

13

O.C.P

15

12

Out4

VDIAG = 5V

TOFF

Output transfer time

14

DIAG DET

I DIAG = 3mA
GND4

IDGH

9
T.S.D

DIAG4

Leak current of DIAG output

Out2

Pre. Reg.
NI3
DIAG3

Saturation voltage of output


transistor

Out1

T.S.D

DIAG2

Quiescent circuit current (per circuit)


Threshold input voltage

Ratings

[Abbreviations]
Drive: Drive circuit
CONT: ON/OFF circuit
Pre.Reg: Pre-regulator

DIAG.DET.: Diagnostic circuit


O.C.P.: Overcurrent protection
T.S.D.: Thermal protection

Standard Circuit Diagram

Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute
(all terminals except VB and GND should be open).

VB
PZ
D1
Out

Diagnostic Function

SLA2502M
IN

VCC
DIAG
5.1k

VB

Load

GND

3.0V

GND

GND

VIN

0.8V

Truth table
VIN
VO
VOUT
SHORT
Is

OPEN OPEN

OVER
VOLTAGE

GND

TSD

Note 1: A pull-down resistor (11k typ.) is connected to the IN


terminal. VOUT turns "L" when a high impedance is
connected to the IN terminal in series.
Note 2: Grounds GND1 and GND2 are not wired internally. They
must be shorted at a pattern near the product.

IO

GND VDIAG
Normal

Shorted load

Open load

Overvoltage

Overheat

ERROR SIGNAL for CPU

38

High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M

Electrical Characteristics
Circuit Current (single circuit)

Circuit Current (4 circuits)

60

(VB = 14V)

1.0

200
Ta =
40C

50

VB
150

Ta =
40C

125C

VCE (sat) (V)

30

IB (mA)

25C

40

IB (mA)

Saturation Voltage of Output Transistor

25C
100
125C

20
VIN = 0V

Ta =

25C

125C
0.5

40C

50

10
VIN = 0V
0
0

10

20

30

40

0
0

46

10

20

VB (V)

0
0

46

IO (A)

Threshold Input Voltage

Input Current (Output OFF)

20

20

VB =
18V
15

125C

25C 40C

I IL (A)

VO (V)

10

VB = 14V
VIN = 0V

Ta =

15
14V

VB (V)

Overcurrent Protection Characteristics (Ta=40C)

VO (V)

40

30

10

1
5

6V

0
0

0
0

50

VIN = 0V

20

VB = 14V

VB = 14V
IDIAG = 3mA

Ta =
40C
25C

Ta = 40V
25V
125V

Iq (mA)

0.2

VDL (V)

0.3

125C
0.2

150

Quiescent Circuit Current (dual circuit)

0.3

0.5

100

Ta (C)

Saturation Voltage of DIAG Output

Input Current (Output Hi)

0.4

VIN (V)

IO (A)

I IH (mA)

0
50

10

0.1
0.1

0
0

VO shorted
VO open
1

0
50

50

100

0
0

150

Thermal Protection Characteristics

20

15

25C

0.9

ROPEN (k)

IOLEAK (mA)

46

Ta =
40C

1.0

TSD
VB = 14V
RL = 1.3k

40

Open Load Detection Resistor

1.1

10

30

VB (V)

Output Terminal Leak Current (VO = 0V)

15

VO1 (V)

10

Ta (C)

VIN (V)

125C

0.8
0.7

10
Ta =
125C
25C
5

40C

0.6
0

0.5
0

50

100

Ta (C)

150

200

0
5

10

15

VB (V)

20

25

10

15

20

VB (V)

39

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003

External Dimensions (unit: mm)

Features
Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
DMOS 2ch output
Allows ON/OFF using C-MOS logic level
Built-in overcurrent and thermal protection circuits

12.2 0.2
+0.1

10.5 0.2

1.0 0.05

16

Fin
thickness

(Ta=25C)

Symbol

Ratings

Unit

8
+0.15

1.27 0.25

Power supply voltage

VB

35

Input terminal voltage

VIN

0.3 to 7

V
mA

I IN

DG terminal voltage

VDG

0.3 to 7

DG terminal current

I DG

mA

Drain to source voltage

Input terminal current

Conditions

VDS

VB 45

Output current

IO

1.8

Power dissipation

PD

Source to drain Di forward current

IF

0.8

Channel temperature

Tch

150

Operating temperature

TOP

40 to +105

Storage temperature

Tstg

40 to +150

0.4 0.05

2.50.2

Parameter

2.0 0.8

Absolute Maximum Ratings

+0.2

7.5 0.2

+0.15

0.250.05

Block Diagram (for one channel)


VB

Ta=25C
Thermal
Protect

Bias

Clamp
Input
Logic

IN

Lavel
Shifting

Charge
Pump

Current
Limit

Chopper

DG

Electrical Characteristics
Symbol
VB (opr)

min

typ

Unit

max

Open/Short
Sense

Conditions
GND

35

Iq

Quiescent circuit current


Output ON resistance

mA

VIN=0V, VOUT=0V

200

IO=1A

300

IO=1A, Ta=80C
VOUT=0V

RDS (ON)
50

100

VIHth

1.4

2.0

3.0

Ta= 40 to +105C

VILth

1.0

1.8

Ta= 40 to +105C

IO, leak

Output leak current


Input threshold Output ON
voltage
Output OFF
Output ON

70

I IH
I IL

Overcurrent protection starting current

IS

12
1.9

Standard Connection Diagram

7,8

OUT1

15,16

200

Inpup current
Output OFF

OUT

VIN=5V

VB

VIN=0V

(2, 3)
9

VOUT =VO 1.5V

(10,11)

OUT2
5V

SPF5003

DG1

5V

Load

5.5

DG2

Load

Parameter
Operating power supply voltage

DG
Logic

(VB=14V, Ta=25C unless otherwise specified)

Ratings

14

Load open detection threshold voltage

*1

TTSD

155

165
3

4.5

70

140

RL=14, VO= 5V

TOFF

35

90

RL=14, VO 10%

20

VDG= 5.5V

VDGL

0.15

0.5

IDG=1.6mA

TPLH

70

140

TPHL

45

120

1.5

I DG

Low level DG output voltage


DG output transfer time
Note:

*1

Vin 2
(7V max)

13

12
GND

RIN

C
P
U

TON

Vopen

Output transfer time


DG leak current

Vin 1
(7V max)

VOUT=0V

RIN

IN and RDG are needed to protect CPU and SPF5003 in case of reverse
* Rconnection
of VB terminal.
* Make VB of 1Pin and 9Pin short from the fin to be plated by solder.

Timing Chart
VIN OFF

VIN ON

Normal

VB

1. Transient time is showed Wave Form below.

VO open

Normal

Open load

OCP

Normal

Normal
Shorted load

VIN

VOUT

Recommended Operating Conditions (for one channel)

Wave Form

Internal current limit

min

TSDON

IOUT

Ratings
Parameter

max

Unit

TSDOFF

VIN
DG

Power supply voltage

5.5

16

VIH

5.5

VIL

0.3

0.9

High inpidance

VOUT 5V
Output transfer time

IO

VOUT 10%

VOUT
TON
VDG 90%

VDG 10%

VDG

40

RIN

10

20

RDG

10

20

Mode

TOFF

Normal
DG output transfer time

TPLH

RDG

Thermal shutdown operating temperature

RDG

ILim

Internal current limit

TPHL

Open load
Shorted load
Overheat

VIN
H
L
H
L
H
L
H
L

DG
H
L
H
H
L
L
L
L

VO
H
L
H
H
L (Limiting)
L
L
L

Normal

TSD
Overheat

41

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5004

External Dimensions (unit: mm)

Features
Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
DMOS 2ch output
Allows ON/OFF using C-MOS logic level
Built-in overcurrent and thermal protection circuits

17.280.2
+0.1

15.580.2

1.0 0.05
13

7.50.2

Symbol

Ratings

Unit

Power supply voltage

VB

35

Input terminal voltage

VIN

0.3 to 7

I IN

mA

VDG

0.3 to 7

V
mA

Input terminal current


DG terminal voltage

2.00.8

(Ta=25C)

DG terminal current

I DG

Drain to source voltage

VDS

VB 45

Output current

IO

2.5

Power dissipation

PD

2.7

Source to drain Di forward current

IF

0.8

Channel temperature

Tch

150

Operating temperature

TOP

40 to +105

Storage temperature

Tstg

40 to +150

Conditions

12
+0.15

1.270.25

0.4 0.05

2.50.2

Parameter

+0.2

Absolute Maximum Ratings

10.50.3

24

Fin
thickness

+0.15

0.250.05

a: Part No.
b: Lot No.

Block Diagram (for one channel)


VB

Ta=25C
Thermal
Protect

Bias

Clamp
Input
Logic

IN

Lavel
Shifting

Charge
Pump

Current
Limit

Chopper

DG

Parameter

Symbol

Operating power supply voltage

VB (opr)

DG
Logic

(VB=14V, Ta=25C unless otherwise specified)

Ratings
min

typ

max

Unit

Open/Short
Sense

Conditions
GND

35

Iq

Quiescent circuit current

mA

150

IO =2A

250

IO =1A, Ta=80C

VOUT =0V

VIN=0V, VOUT=0V

RDS (ON)

Output ON resistance

50

IO, leak

Output leak current


Output ON

VIH

Output OFF

VIL

Output ON

I IH

3.0

2.0

OUT

Standard Connection Diagram

Ta= 40 to +105C

Input voltage
Inpup current

Overcurrent protection starting current

IS

1.0

70

2.6

ILim

Internal current limit

1.8

10

2,3

Ta= 40 to +105C

VOUT =VO 1.5V

VOUT =0V

OUT1

14,15

VIN =5V

VB

(4,5,6)
13

OUT2
5V

SPF5004

DG1

24

5V

Load

5.5

DG2

(16,17,18)

Load

Electrical Characteristics

12

Vopen

155

165

TON

165

TOFF

60

I DG

Low level DG output voltage

20

VDGL

0.15

TPLH

70

TPHL

45

DG output transfer time

(7V max)

GND

RIN

C
P
U

Output transfer time


DG leak current

Vin 1
(7V max)

21

RIN

VB of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin
* Make
to be plated by solder.

VDG =5.5V
IDG =1.6mA

Timing Chart
VIN OFF

VIN ON

Normal

VB

VO open

Normal

Open load

OCP

Normal

Normal
Shorted load

VIN

Recommended Operating Conditions (for one channel)


Unit

min

max

5.5

16

VIH

5.5

VIL

0.3

0.9

1.15

Power supply voltage

IO

VOUT
Internal current limit

Ratings

Parameter

TSDON

IOUT

TSDOFF

DG

High inpidance

Mode
Normal

RIN

10

20

Open load

RDG

10

20

Shorted load
Overheat

42

RDG

TTSD

Load open detection threshold voltage

11

RDG

Thermal shutdown operating temperature

23 Vin 2

VIN
H
L
H
L
H
L
H
L

DG
H
L
H
H
L
L
L
L

VO
H
L
H
H
L (Limiting)
L
L
L

Normal

TSD
Overheat

43

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 3-circuits] SPF5007

External Dimensions (unit: mm)

Features

17.280.2
+0.1

15.580.2

1.0 0.05

24

Fin
thickness

13

7.50.2

Parameter

Symbol

(Ta=25C)

Ratings

Unit

Power supply voltage

VB

35

Input terminal voltage

VIN

0.3 to 7

I IN

mA

VDG

0.3 to 7

V
mA

Input terminal current


DG terminal voltage
DG terminal current

I DG

Drain to source voltage

VDS

VB 45

Output current

IO

1.8

Power dissipation

PD

2.7

Source to drain Di forward current

IF

0.8

Channel temperature

Tch

150

Operating temperature

TOP

40 to +105

Storage temperature

Tstg

40 to +150

2.00.8

Conditions

12
+0.15

1.270.25

0.4 0.05

2.50.2

Absolute Maximum Ratings

+0.2

10.50.3

Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
DMOS 3ch output
Allows ON/OFF using C-MOS logic level
Built-in overcurrent and thermal protection circuits

+0.15

0.250.05

a: Part No.
b: Lot No.

Block Diagram (for one channel)


VB

Ta=25C, all circuit operating


Thermal
Protect

Bias

Clamp
Input
Logic

IN

Lavel
Shifting

Charge
Pump

Current
Limit

Chopper

DG

Electrical Characteristics
Symbol
min

typ

Unit

Open/Short
Sense

Conditions

max
GND

35

Output ON resistance

mA

200

IO =1A

350

IO =1A, Ta=80C
VOUT =0V

RDS (ON)

VIN =0V, VOUT =0V

50

100

Output ON

VIHth

1.4

2.0

3.0

Ta= 40 to +105C

Output OFF

VILth

1.0

1.8

Ta= 40 to +105C

Output ON

I IH

IO, leak

Output leak current

70

200

Inpup current
Output OFF
Overcurrent protection starting current
Internal current limit

ILim

Thermal shutdown operating temperature

TTSD

Load open detection threshold voltage

Vopen

155
1.5

OUT1

13 VB

OUT2

5,6
10,11
20,21

OUT3

VIN =5V

SPF5007

5V
4

DG1

VIN =0V

VOUT =VO 1.5V

VOUT =0V

165

RDG

4.5

RIN

70

140

12
1.9

Standard Connection Diagram

I IL
IS

OUT

DG2
GND1 GND2
2
7

IN1
3

GND3
17

IN2
8

IN3
18

19

DG3

Load

5.5

Iq

Quiescent circuit current

Input threshold
voltage

VB (opr)

Load

Operating power supply voltage

Load

Parameter

DG
Logic

(VB=14V, Ta=25C unless otherwise specified)

Ratings

RDG
RDG

RIN

C
P
U

RIN

TON
Output transfer time
TOFF

35

I DG

DG leak current
Low level DG output voltage

RL=14, VOUT =VB 5V

90

RL=14, VB 10%

20

VDG =5.5V

VDGL

0.15

0.5

TPLH

70

140

TPHL

45

120

DG output transfer time

IDG =1.6mA

IN and RDG are needed to protect CPU and SPF5007 in case of reverse
* Rconnection
of VB terminal.
* Make VB of 1Pin and 13Pin short from the fin to be plated by solder.

Timing Chart
VIN OFF

VIN ON

Normal

VB

VO open

Normal

Open load

OCP

Normal

Normal
Shorted load

VIN

VOUT

Recommended Operating Conditions (for one channel)


Parameter

max

Unit

TSDOFF

DG

High inpidance

Power supply voltage

5.5

16

VIH

5.5

VIL

0.3

0.9

Normal

Open load

RIN

10

20

Shorted load

RDG

10

20

Overheat

IO

44

IOUT

Ratings
min

Internal current limit


TSDON

Mode

VIN
H
L
H
L
H
L
H
L

DG
H
L
H
H
L
L
L
L

VO
H
L
H
H
L (Limiting)
L
L
L

Normal

TSD
Overheat

45

High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017

External Dimensions (unit: mm)

Features
Internal current sense resistor
High accuracy current monitor output (sample & hold function)
Built-in overcurrent and thermal protection circuits

14.740.2
+0.1

13.040.2

1.0 0.05
11

Ratings

Unit

Power supply voltage 1

VB

0 to 32

Power supply voltage 2

Vcc

0.5 to 7.0

Power supply voltage 3

VB

0 to 40

Current sensing voltage


Output terminal voltage
Input terminal voltage

(Ta=25C)

Symbol

Vsense+

0.8 to 6

Vsense

Vsense+Io Rsense

VOUT

2 to 32

0.5 to 7.0

VPWM

Conditions

10
+0.15

1.270.25

0.4 0.05

2.50.2

Parameter

2.00.2

Absolute Maximum Ratings

7.50.2

10.50.3

20

Fin
thickness

VB terminal, t = 1 min

+0.15

0.250.05

a) Part No.
b) Lot No.

VHold
Output current

IOUT

2.0

Power dissipation

PD

2.4 to 5.0

Storage temperature

Tstg

40 to +150

Channel temperature

Tch

150

Block Diagram (for one channel)


Vcc

Depends on surface-mount board pattern

VB
17
clamp

Parameter

Symbol

(VB=14V, Ta=25C unless otherwise specified) One circuit equivalent

typ

TSD

OCP

Operating power supply voltage 1

VB min
VB

Sense+

70k

max

Unit

Conditions

18

CMOS Logic

Hold

Operating power supply voltage 2

VCC

Quiescent circuit current 1

Iqvb

Quiescent circuit current 2


PWM terminal input voltage

14

lamp

Hold terminal input voltage

Output ON resistance

Current sensing resistance

70

Vcc = 5V, VPWM = 0V, One circuit equivalent

0.2

mA

Vcc = 5V, VPWM = 0V

110

Ttsd

150

Io

0.2

Vcc = 5V, VPWM = 5V, Active H * 3

IOUT = 1A

0.21

IOUT = 1A, Ta = 125C

0.21

IOUT = 1A

0.25

IOUT = 1A, Ta = 125C

*4

*1
Io = 0A, Vcc = 5V

0.2

0.500

0.512

Io = 0.2A, Vcc = 5V

1.219

1.250

1.281

Io = 0.5A, Vcc = 5V, Ta = 40 to 140C

2.925

3.000

3.075

mA

Io = 1A, Vcc = 5V, VSH = 0V

mA

Io = 1A, Vcc = 5V, VSH = 5V

15

t off

15

tr

100

tf

t shd

Hold time after inputting hold

t shh

S/H settling time

VCC

500

Controlling
microcomputer
CPU

2
3
5

1k
0.01
F

VB

17

Sense+

Hold

Sense

50

650

s
s

VB = 11V, Vcc = 5V, Io = 1.2A,


C1 = 0.033F

80

VB = 11V, Vcc = 5V, Io = 1.2A,


C1 = 0.033F, Ta = 125C

t stt

20

D1

5.1
k

LG

D2

Timing Chart
Ordinary operation
(auto hold)

Thermal
protection

Ordinary operation
(external hold)

VPWM

Icoil

*1
500 to 650
usec

Io = 0.5A, Vcc = 5V,

70

18

* Use a Schottky Di for D2 when the Sense+ terminal


is lower than the abs. max. rated voltage (0.8V)

VS/H

C1 = 0.033F

19

S/H

Vout

Io = 0.5A, Vcc = 5V

OUT

SFP5017

PWM

C1

Io = 1.2A, Vcc = 5V, Ta = 40 to 140C

Note:
* 1: Accuracy warranty range for current monitor output
* 2: Equivalent errors are not included in current monitor output accuracy.
* 3: With built-in pull-down resistance (70k typ)
* 4: Self-excitation and oscillation type
* 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1).
The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.

46

LG

Standard Connection Diagram

C
1.2

Current monitor output delay time

Vcc = 5V

t on

t sh

Vcc = 5V, VPWM = 5V, Active H * 3

0.488

ISH

Current monitor output hold time

Vcc = 5V

110

Rsense

Operation circuit for current monitor output

Output fall time

*2

0.14
RDSon

Thermal shutdown operating temperature

Output rise time

Sense

S/H

70

3.0

Output transfer time

20

1.5

IHoldH

VSH

A
V

Is

Current monitor output current

mA

S/H

3.5

Overcurrent protection starting current

Current monitor output voltage

7.2

VHoldL
Hold terminal input current

1.5

IPWMH
VHoldH

16

*1

70k

Sense
R

3.5

VPWML
PWM terminal input current

Minimum operation of OUT terminal.

5.0

Iqvcc
VPWMH

6
10

OUT
19

PWM

Min. operating power supply voltage

Sense
MOS

Ratings
min

Charge
Pump

OSC

Electrical Characteristics

SFP5017

*2

*1
500 to 650
usec

VHold

Truth table
VPWM

VOUT

Overcurrent
protection

Ordinary operation
(auto hold)

47

High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018

External Dimensions (unit: mm)

Features
Internal current sense resistor
High accuracy current monitor output (sample & hold function)
Built-in overcurrent and thermal protection circuits

12.20.2

+0.2

Conditions

VB

0 to 32

Vcc

0.5 to 7.0

1.270.25

Power supply voltage 3

VB

0 to 40

Input terminal voltage

Vsense+

0.8 to 6

Vsense

Vsense+Io Rsense

VOUT

2 to 32

0.5 to 7.0

VPWM

2.0 0.8

Unit

Power supply voltage 2

Output terminal voltage

(Ta=25C)

Ratings

Power supply voltage 1

Current sensing voltage

Fin
thickness

8
+0.15

0.4 0.05

2.50.2

Symbol

1.0 0.05

7.50.2

Absolute Maximum Ratings


Parameter

+0.1

10.50.2
16

VB terminal, t = 1 min

+0.15

0.250.05

VHold
Output current

IOUT

2.0

Power dissipation

PD

2.0

Storage temperature

Tstg

40 to +150

Channel temperature

Tch

150

Block Diagram (for one channel)


Vcc

Depends on surface-mount board pattern

VB
11
clamp

Electrical Characteristics

Charge
Pump

OSC

TSD

(VB=14V, Ta=25C unless otherwise specified)

Sense
MOS

OCP

OUT
14

PWM
3

Parameter

Symbol

70k

Ratings
min

typ

Sense+

max

Unit

13

CMOS Logic

Conditions

Hold

lamp

4
70k

Min. operating power supply voltage


Operating power supply voltage 1

VB min
VB

Operating power supply voltage 2

VCC

Quiescent circuit current 1

Iqvb

Quiescent circuit current 2


PWM terminal input voltage

10

14

Hold terminal input voltage

Output ON resistance

Current sensing resistance

70

Vcc = 5V, VPWM = 0V

0.2

mA

Vcc = 5V, VPWM = 0V

110

Ttsd

150

Io

0.2

Vcc = 5V, VPWM = 5V, Active H * 3

IOUT = 1A

0.21

IOUT = 1A, Ta = 125C

0.21

IOUT = 1A

0.25

IOUT = 1A, Ta = 125C

*4

*1
Io = 0A, Vcc = 5V

0.2

0.500

0.512

Io = 0.2A, Vcc = 5V

1.219

1.250

1.281

Io = 0.5A, Vcc = 5V, Ta = 40 to 140C

2.925

3.000

3.075

mA

Io = 1A, Vcc = 5V, VSH = 0V

mA

Io = 1A, Vcc = 5V, VSH = 5V

6
15

t off

15

tr

100

tf

Current monitor output delay time

t shd

Hold time after inputting hold

t shh

S/H settling time

500

3
4
6

1k
0.01
F

11

VB

Sense+

Hold

Sense

50

650

s
s

VB = 11V, Vcc = 5V, Io = 1.2A,


C1 = 0.033F

80

VB = 11V, Vcc = 5V, Io = 1.2A,


C1 = 0.033F, Ta = 125C

t stt

D1

5.1
k

LG

C
5

D2

Timing Chart
Ordinary operation
(auto hold)

Thermal
protection

Ordinary operation
(external hold)

VPWM

Icoil

*1
500 to 650
usec

Io = 0.5A, Vcc = 5V,

70

15

* Use a Schottky Di for D2 when the Sense+ terminal


is lower than the abs. max. rated voltage (0.8V)

VS/H

C1 = 0.033F

14
13

S/H

Vout

Io = 0.5A, Vcc = 5V

OUT

SFP5018

PWM

C1

Io = 1.2A, Vcc = 5V, Ta = 40 to 140C

Note:
* 1: Accuracy warranty range for current monitor output
* 2: Equivalent errors are not included in current monitor output accuracy.
* 3: With built-in pull-down resistance (70k typ)
* 4: Self-excitation and oscillation type
* 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1).
The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.

48

Controlling
microcomputer
CPU

C
1.2

t on

t sh

Vcc = 5V

0.488

ISH

Current monitor output hold time

*3

110

Rsense

Operation circuit for current monitor output

Output fall time

LG

Standard Connection Diagram

Vcc = 5V
Vcc = 5V, VPWM = 5V, Active H

0.14
RDSon

Thermal shutdown operating temperature

Output rise time

VCC

70

3.0

Output transfer time

*2

1.5

IHoldH

VSH

A
V

Is

Current monitor output current

mA

Sense

S/H

3.5

Overcurrent protection starting current

Current monitor output voltage

7.2

VHoldL
Hold terminal input current

15

S/H

1.5

IPWMH
VHoldH

16

*1

3.5

VPWML
PWM terminal input current

Minimum operation of OUT terminal.

5.0

Iqvcc
VPWMH

Sense
R

*2

*1
500 to 650
usec

VHold

Truth table
VPWM

VOUT

Overcurrent
protection

Ordinary operation
(auto hold)

49

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A

External Dimensions (unit: mm)

Features
DMOS 4ch output
Allows ON/OFF using C-MOS logic level
Built-in overcurrent, overvoltage and thermal protection circuits

12.2 0.2

(Ta=25C)

VB

40
37

VIN

0.5 to +7.5

Output current

IO

1.8

Power Dissipation

PD

Storage temperature

Tstg

40 to +150

Channel temperature

Tch

150

Output avalanche capability

EAV

50

mJ

Output terminal voltage


Input terminal voltage

Conditions

+0.2

Unit

2.0 0.8

Ratings

8
+0.15

1.270.25

0.4 0.05

2.5 0.2

Symbol

VOUT

Power supply voltage

1.0 0.05
Fin
thickness

7.5 0.2

Absolute Maximum Ratings


Parameter

+0.1

10.5 0.2
16

+0.15

0.25 0.05

Single pulse

Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics.

Equivalent Circuit Diagram


VB

VOUT 1

Gate Protction

Electrical Characteristics
Parameter
Power supply voltage

Symbol
VBopr

Reg. REF

(VB =14V, Ta=25C unless otherwise specified)


OVP

Ratings
min

typ

5.5

max
25

Unit

Conditions

Gate Driver

TSD
OCP

P-GND
VIN 1

Quiescent circuit current

Iq

mA

VIN = 0V (all inputs)

Operating circuit current

ICC

12

mA

VIN = 5V (all inputs)

250 k typ

Hi output

VIN

3.5

5.5

Lo output

VIN

0.5

1.5

IO = 1A

Input voltage

VIN 2

VOUT 2

VIN 3

VOUT 3

VOUT 4

Hi output

I IN

50

VIN = 5V

Lo output

I IN

30

VIN = 0V

0.6

VIN 4

0.5

0.7

VB = 5.5V

L-GND

50

55

IO = 1A

Input current
0.4
Output ON resistance

RDS (ON)

Output clamp voltage

VOUT (clamp)

41

Output leak current

I OH

10

VO = 37V

Forward voltage of output stage


diode

VF

1.6

I F = 0.5A

Overvoltage protection starting


voltage

VB (ovp)

25

40

Thermal protection starting


temperature

TTSD

151

Overcurrent protection starting


current

IS

1.1

165

Circuit Example

VCC

TON

12

12

RL = 14, I O = 1A

14

Output transfer time


TOFF

RL = 14, I O = 1A

Output rise time

Tr

RL = 14, I O = 1A

Output fall time

Tf

10

RL = 14, I O = 1A

IN2
IN3

L
H

15

5
VB

SPF5002A

IN4
L-GND
13

P-GND
1,9

Use L-GND and P-GND being connected.

Truth table
VIN
VO
L

OUT2 OUT4

IN1

CONTROL
UNIT

10

OUT1 OUT3

Timing Chart
OVP

VB
VOUT

VIN
Normal

50

Overvoltage

Overheat

Overcurrent

* Self-excited frequency is used in the overcurrent protection.

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A

Electrical Characteristics
Quiescent Circuit Current

Circuit Current (single circuit)

10

10

Id (mA)

Iq (mA)

Ta = 40C

Ta = 120C
2

Ta = 40C

Ta = 125C

10

20

30

40

Ta = 125C
4

Ta = 25C
Ta = 40C

Ta = 25C

Ta = 25C

Id (mA)

Circuit Current (4 circuits)

10

10

VB (V)

20

30

40

10

20

Output ON Voltage

Threshold Input Voltage


15

30

40

VB (V)

VB (V)

Forward Voltage of Output Stage Diode


1.5

1.0

VB = 14V

Ta = 125C
Ta = 25C

0.4
0.5
0.2

VO = 14V
IO = 0.1A
0

0.6

I F (A)

VDS (ON) (V)

1.0

VO (V)

10

Ta = 125C
Ta = 25C
Ta = 40C

0.8

Ta = 40C
Ta = 25C
Ta = 125C

Ta = 40C
1

0.5

VIN (th) (V)

1.0

1.5

2.0

IO (A)

Overcurrent Protection Characteristics

0.5

1.0

1.5

VF (V)

Overvoltage Protection Starting Voltage

15

15
IO = 0.1A

VB =14V

10

Ta = 40C
Ta = 25C
Ta = 125C

VO (V)

VO (V)

10

Ta = 120C
Ta = 25C
Ta = 40C
0

1.0

IO (A)

2.0

10

20

30

40

VB (V)

51

Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development)

External Dimensions (unit: mm)


17.28 0.2
+0.1

15.58 0.2

1.0 0.05

24

Fin
thickness

13

Symbol

Ratings

Unit

VB

40

Output terminal voltage (DC)

VOUT

50

Output terminal voltage (pulse)

VOUT

Output clamping (max 70V)

Output current (DC)

IOUT

2.9

Output current (pulse)

IOUT

Over current protection starting current

Input terminal voltage

V( IN, SEL, B/U)

0.5 to +6.5

Diag output source current

VDIAG

6.5

Diag output voltage

I DIAG

mA

Power Dissipation

2.00.8

(Ta=25C)

PD

2.8

Storage temperature

Tstg

40 to +150

Channel temperature

Tch

150

Conditions

12
+0.15

1.27 0.25

0.4 0.05

2.5 0.2

Parameter
Power supply voltage

+0.2

Absolute Maximum Ratings

+0.15

0.250.05

a : Part No.
b: Lot No.

Equivalent Circuit Diagram


VB
(7)

Gate Protection
Ref

VOUT1
(4)

Reg
Gate driver

VIN B/U
(17)
TSD

Output avalanche capability

80

EAV

mJ

VOUT
SENSE

VIN SEL
(5)
Set
OUT OCP
Latch Reset

Single pulse
VIN 1
(6)

P-GND1
(1, 2)

OSC
Monitor

Symbol
VB (opr)

(VB =14V, Ta = 25C unless otherwise specified)

Ratings
min

typ

5.5

max

Unit

40

12

mA

VB =14V, VIN=0V

Operating circuit current

Id

12

15

mA

VB =14V, VIN=5V (all inputs)

Input voltage
(1 to 4, SEL, B/U)

VIN (H)

3.5

6.5

VB =14V, VO=1A

VIN (L)

0.5

1.5

VB =14V

Input current (single circuit)


(1 to 4, SEL, B/U)

I IN (H)

200

VB =14V, VIN=5V

I IN (L)

30

VB =14V, VIN=0V

Output ON resistance

RDS (ON)

0.18

VB =14V, IO=1A

Output clamp voltage

VOUT (clamp)

VB =14V, IO=1A

70

Output leak current

I OH

50

Forward voltage of output stage diode

VF

1.5

I F =1A

Output moniter threshold voltage

65

P-GND2
(11, 12)
VDIAG2
(10)
VOUT3
(16)

Iq

60

VIN 2
(8)

Conditions

Quiescent circuit current

Power supply voltage

VB =14V, VO=50V

VIN 3
(18)

P-GND3
(13, 14)
VDIAG3
(15)
VOUT4
(21)

VIN 4
(20)

P-GND4
(23, 24)
VDIAG4
(22)

L-GND
(19)

Circuit Example

VB =14V

6.5

VB =14V, VDIAG=6.5V

VDIAG (L)

0.5

VB =14V, IDIAG=5mA

I DH

10

VB =14V, VDIAG=6.5V

18

Vt hM
VDIAG (H)

6.4

DIAG output voltage


DIAG output leak current

VDIAG1
(3)

VOUT2
(9)

Electrical Characteristics
Parameter

Thermal shutdown operating temperature

TTSD

151

Overcurrent protection starting current

IS

3.0

165

VB =14V

VB =14V

12

VB =14V, RL=14, I O=1A

TOFF

VB =14V, RL=14, I O=1A

Output rise time

Tr

VB =14V, RL=14, I O=1A

Output fall time

Tf

10

VB =14V, RL=14, I O=1A

t DON

12

VB =14V, RL=14, I O=1A

t DOFF

VB =14V, RL=14, I O=1A

DIAG output transfer time

20
17
5

VB

OUT1

OUT2

16

OUT3

21

OUT4

VIN1
VIN2
VIN3
VIN4

DIAG1
DIAG2

SPF5009

DIAG3
DIAG4

VINB/U
VINSEL
LG

TON
Output transfer time

19

PG1
1, 2

PG2
11, 12

PG3
13, 14

3
10
15
22

PG4
23, 24

Timing Chart
Main input signal 1
VIN1
Main input signal 2
VIN2
Backup input signal
VINB/U
Input select signal
VINSEL
Power supply voltage
VB
Output voltage 1
VOUT1

OCP

OCP

Output current 1
IOUT1
DIAG output 1
VDIAG1
DIAG output 2
VDIAG2
Nomal

52

10.5 0.3

DMOS 4ch output


Allows ON/OFF using C-MOS logic level
Built-in over current and thermal protection circuit and diagnostic function to
detect open load
Built-in output status signals (over current, over heat and open load)

7.5 0.2

Features

Output 1
Output 1
Output 1
Overheat Over current Open load
Main mode

Nomal

Output 1
Output 1
Output 1
Overheat Over current Open load
Backup mode

53

Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012

External Dimensions (unit: mm)

Features

17.28 0.2
+0.1

15.58 0.2

1.0 0.05

24

Fin
thickness

13

(Ta=25C)

Symbol

Ratings

Unit

Power supply voltage 1

VB

40

Power supply voltage 2

VCC

7.5

Output voltage

VO

40 (DC)

Logic input voltage

VIN

0.5 to +7.5

Output current

IO

Self Limited

VDIAG

0 to VCC

PD

2.8 to 5

Storage temperature

Tstg

40 to +150

Channel temperature

Tch

150

Output avalanche capability

EAV

100

mJ

Diag output voltage


Power Dissipation

Conditions

12
+0.15

1.27 0.25

0.4 0.05

2.5 0.2

Parameter

2 0.2

Absolute Maximum Ratings

7.5 0.2

10.5 0.3

Output monitor circuit (DIAG)


DMOS 4ch output
Allows ON/OFF using C-MOS logic level
Built-in overcurrent, overvoltage and thermal protection circuits

+0.15

0.250.05

*1
a : Part No.
b: Lot No.

Equivalent Circuit Diagram

*2

VCC1-2
(7)
Diag1
(5)

Single pulse
VB
(19)

* 1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics
* 2. Changes by the patern of mounted substrate

Gate Protection
VOUT1
(3)

Reg
OVP
Gate driver

TSD
VIN1
(4)

OCP

P. GND1
(1, 2)

Ch1

Electrical Characteristics

(VB =14V, Ta = 25C unless otherwise specified)

Ratings

Parameter

Symbol

Operating power supply voltage 1

VB (opr)

5.5

40

Operating power supply voltage 2

VCC (opr)

4.5

5.5

min

typ

max

Unit

Conditions

Ch2

VCC3-4
(18)

Quiescent circuit current

Iq

mA

VB =14V, VIN=0V

Operating circuit current

Id

12

mA

VB =14V, VIN=5V

Hi output

VIN

3.5

5.5

VB =14V, VO=1A

Lo output

VIN

0.5

1.5

VB =14V

Input voltage
Hi output

I IN

50

VB =14V, VIN=5V

Lo output

I IN

30

VB =14V, IO 1A

0.3

VB =14V, IO=1A, Ta=125C

0.2

VB =14V, IO=1A, Ta=25C

55

2.8

mA

VB =14V, VCC=5V, VIN=0V,


VO =40V, Ta=25C

900

VB =14V, VCC =5V, VIN=0V,


VO =14V, Ta=25C

1.6

40

Input current

Output ON resistance
Output clamp voltage

Output leak current

RDS (ON)
VOUT (clamp)

45

50

I OH

Forward voltage of output stage diode

VF

Overvoltage protection starting voltage

VB (ovp)

VB =14V, IO=1A

Overvoltage protection hysteresis voltage VB (ovphys)


Thermal shutdown operating temperature
Overcurrent protection
operating current

TTSD

IS

151

165

L. GND
(6)

Circuit Example

VB =14V, Ta=40C
VB =14V, Ta=25C

VB =14V, Ta=125C

TOFF

Tr

10

Output transfer time


Output rise time
Output fall time
Output-diag voltage ratio
Diag output clamping voltage

Tf
ra (DIAG)
VDIAG (clamp)

0.195

0.2

0.205
4.85

19

VIN1
VIN2
VIN3
VIN4

4
9
16
21

10

15

22

VOUT1 VOUT2 VOUT3 VOUT4


Diag1
Diag2
Diag3
Diag4

SPF5012

5
8
17
20

Diag
output

P-GND1 P-GND2 P-GND3 P-GND4

1, 2

11,12

13,14

23,24

Truth table
VIN
VO
H

Short L-GND and P-GND


in a pattern near the product.

VB=14V, RL=14, I O=1A

VB =14V, VO =1 to 14V, Rdiag=500k


V

Input
signal

L-GND

18

VCC1-2 VCC3-4 VB

VB =14V

12

Ch4

Diag4
(20)
VOUT4
(22)
P. GND4
(23, 24)

VIN4
(21)

I F=1A

TON

Ch3

Diag3
(17)
VOUT3
(15)
P. GND3
(13, 14)

VIN3
(16)

VCC

25

Diag2
(8)
VOUT2
(10)
P. GND2
(11, 12)

VIN2
(9)

Timing Chart

VB=14V, VCC=5V, VO =40V

OVP

VB
VOUT

VIN
Normal

54

Overvoltage

Overheat

Overcurrent

* Self-excited frequency is used in the overcurrent protection.

55

Stepper-motor Driver ICs SLA4708M

External Dimensions (unit: mm)

Features
High output breakdown voltage of 50V
Affluent output current of 1.5A
Built-in overcurrent, overvoltage and thermal protection circuits
Low standby current of 50A

31.00.2
3.20.15

Input voltage

VS

35

50

VO
VIN

0.3 to +7

1.5

Diagnostic output sink current

IDIAG

10

mA

Diagnostic output withstand voltage

IDIAG. H

Operating temperature

Top

40 to +85

Storage temperature

Tstg

40 to +150

PD

3.5 (Ta=25C)

Power Dissipation

Lead plate thickness


resins 0.8 max

9.90.2

8.5max

12

Pin 1
+0.2

0.85 0.1

1.20.15

IO, AVE

Output current

Conditions

2.7

16.00.2

Breakdown voltage

Unit

9.5min (10.4)

Power supply voltage

Ratings

13.00.2

16.4

(Ta=25C)

Symbol

4.80.2
1.70.7

0.2

Absolute Maximum Ratings


Parameter

Ellipse 3.20.15 3.8

24.40.2

+0.2

0.55 0.1

0.15

2.20.7

1.45
0.7

11P2.54

1.0

=27.94

31.5 max

a: Part No.
b: Lot No.

1 2 3 4 5 6 7 8 9 10 11 12

Without heatsink

Standard Circuit Diagram


Electrical Characteristics
Parameter
Input voltage
(I A/A, I B/B standby)
Input current

Symbol

(VS =12V, Ta=25C)

min

typ

max
0.8

VIL
VIH

Ratings

2.4

Unit

Output leak current


Overcurrent detection

4
OUTA

I IL

0.8

mA

VIN = 0.4V

I IH

50

VIN = 2.4V

Overvoltage detection
Saturation voltage of diagnostic
output
Standby current

56

VO.STA

1.3

I O = 1A, Ta = 25C

VO.STA

1.5

I O = 1.5A, Ta = 25C

100

I O.LEAK
I SD

1.8

VSD

27.5

I STB

VO = 16V

A
V

VDIAG.L

0.3
50

ZD

V
A

I DIAG = 5mA
VS = 12V

5
OUT A

9
OUT B

SLA4708M

8
1
OUT B VS
12
DIAG
3
I
A /A

I B/B 10
5V

Output saturation voltage

Conditions

STBY

4.7 k

P-GND
6

L-GND
11

L-GND
7
N.C.

CPU

ZD: VS <35V
C 100F
(Reference)

Stepper
motor

Stepper-motor Driver ICs SLA4708M

Electrical Characteristics
Overvoltage Protection Characteristics

20

200

14

Ta = 25C
Vcc=12V

Constant (ST = 5V)

Output voltage VO (V)

100

At Constant IS (mA)

At standby IS (A)

Power supply current

12

10

Common for
all phases

10
8
6
4

At standby (ST = 0V)


2
0

0
0

10

20

30

Power supply voltage VS (V)

0
0

10

20

Power supply voltage VS (V)

Saturation Voltage of Output Transistor Characteristics


Saturation voltage of output transistor Vsat (V)

Power Supply Current Characteristics

30

35

2.0

Vcc (Vs) =16V


Ta =25C

Common for
all phases

1.5

1.0

0.5
0

1.0

2.0

3.0

Output current IO (A)

Thermal Protection Characteristics


14

Vcc (Vs) =12V


VST = 5V

Output voltage VO (V)

12
10
8

T j2

T j1

6
4
2
0
0

110

120

130

140

150

160

Junction temperature Tj (C)

57

2-ph Stepper-motor Driver ICs SPF7211

External Dimensions (unit: mm)

Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.)
Built-in recovery diode
Built-in standby function
Built-in overcurrent and thermal protection circuits and low voltage input shutoff function
Built-in overload and disconnection detection function

17.280.2

Flag terminal withstand voltage


Flag terminal current
Detect voltage
Power dissipation
Junction temperature
Operating temperature
Storage temperature

Ratings
40
0.3 to 15
0.8
1.0
7
3
2 to 2
4.1
39
150
40 to 110
40 to 150

PD
Tj
Top
Tstg

Unit
V
V
A
V
mA
V
W

Remarks
VIN

20.2

Symbol
VBB
VIN
Io
IoPeak
VFlag
IFlag
VRs

10.50.3

Fin
thickness

12
+0.15

1.270.25

VBB

0.4 0.05

2.50.2

Output current

1.0 0.05
13

Absolute Maximum Ratings


Parameter
Main power supply voltage
Input voltage

+0.1

15.580.2
24

7.50.2

Features

Tw 1mS
VFlag VBB

+0.15

0.25 0.05

a) Part No.
b) Lot No.

For Ta = 25C * 1
For Tc (Ttab) = 25C

C
C
C

Note: *1: With glass epoxy + copper foil board (size 5.07.4cm; t: glass epoxy = 1.6mm /copper foil = 18m)

Standard Circuit Diagram

Recommended Operation Range


Unit
V
V
A
V
mA
V
C

Rs

Remarks
VIN VBB
Continuous
VFlag VBB

I20 24
I21
Ph2
FL1
GND
GND
GND
GND
Out2A
Rs2
FL2
Out2B 13

Ratings
6 to 18
0.3 to 7.0
0.5
0 to 7.0
0 to 1.0
1 to 1
40 to 110

PC
(ECU)

SPM

Electrical Characteristics
Parameter
Main power supply current
Low voltage protection operation voltage
UVLO hysteresis voltage
Output leak current

Symbol
IBB
IBBS
VUVLO
VUVLOhys
IoleakL
IoleakH

min

Ratings
typ

3.5
100

100
0.5
0.8
1.2
1.5
1.2
1.3

Output saturation voltage


VsatH
Recovery diode forward voltage

Input terminal

Input voltage
Hysteresis voltage

Ph terminal

Input current

Ixx, Set terminals Input current


Detect voltage

VRs

Oscillation frequency
PWM frequency
Ct terminal threshold voltage
Ct terminal current

Overcurrent detection voltage


Open detection voltage
Flag terminal leak current
Flag terminal saturation voltage
Flag terminal current
Response pulse
width
Set terminal
Pulse rate
Pulse number
Flag response
time

OCP operation
Open operation

I/O propagation time

Thermal protection temperature


Thermal protection hysteresis
Thermal alarm temperature
Thermal alarm hysteresis

58

V FL
V FH
VFGO
VIL
VIH
VIhys
IIL
IIH
IIL
IIH

Fosc
FPWM
VctL
VctH
Ictsink
Ictsouce
VocpL
VocpH
VocpL
VocpH
Vopen
IleakFlag
VFlagL
IFlag
Tpw
Tpws
Fclock
Pulse
tocp1
tocp2
tocp3
topen1
topen2
tonH1
toffH1
tonH2
toffH2
tonL1
toffL1
tonL2
toffL2
Tj
Tj
Talarm
Talarm

Rs

max
50
50
4.5

0.5

VsatL

1.2
0.8
2.0
0.5
5
5
30
660
420
40
28.8
14.4

1.5
VBB2.5
1.0
VBB2.3

5
5

700
450
70
48
24
0.5
1.5
720
120
3.0
VBB2.0

50
740
480
90
72
36

4.2
VBB1.7
1.85
VBB1.5

60
10
0.5
3
10
100
17
2.5
5.0
5.0
2.5
2.5

24
256
5.0
10.0
10.0
5.0
5.0
1.5
1.5

31
10.0
20.0
20.0
10.0
10.0

100
100
2.0
0.5
100
100
150
120

20
130
20

I11
Ph1
Ct
Set
GND
GND
GND
Out1A
Rs1
VBB
12 Out1B

Symbol
VBB
VIN
Io
VFlag
IFlag
VRs
Top

1 I10

Parameter
Main power supply voltage
Input voltage
Output current
Flag terminal withstand voltage
Flag terminal current
Detect voltage
Operating temperature

140

Unit

Conditions

mA
A
V
V
A
A
V
V
V
V
V
V
V
V
V
V
A
A
A
A
mV
mV
mV
kHz
kHz
V
V
A
A
V
V
V
V
mV
A
V
mA
S
S
Hz

S
S
S
S
S
S
S
S
S
S
S
S
S
C
C
C
C

In ordinary operation (no load)


At sleep

VBB = 40V, Vo = 0V
VBB = Vo = 40V
Io = 0.5A
Io = 0.8A
Io = 0.5A
Io = 0.8A
Io = 0.5A
Io = 0.5A
Io = 0.5A

Ct
2200pF

Rs 1 typ (1 to 2W)
IoM VRs/Rs

2-phase excitation
Clock
Ph1
I10, I11
Ph2
I20, I21

*1
Out voltage
Out voltage
VBB = 5.5V
VBB = 5.5V
Sence voltage
VFlag = 7V
IFlag = 1mA
In ordinary operation
At sleep
Ct = 2200pF
In ordinary operation; Ct = 2200pF
At switching the phase
When Ixx shifts from L to H
In ordinary operation
When Ixx shifts from L to H

*2

Note:
*1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency.
*2: Thermal protection and alarm temperatures are design values.

Excitation Signal Time Chart

0
L
H
L
H

1
H
H
L
H

2
H
H
H
H

3
L
H
H
H

0
L
H
L
H

1
H
H
L
H

1 to 2-phase excitation
Clock
Ph1
I10, I11
Ph2
I20, I21

VIL = 0.8V
VIH = 2.0V
Ix0 = High, Ix1 = High
Ix0 = Low, Ix1 = High
Ix0 = High, Ix1 = Low
Ct = 2200pF20%
Ct = 2200pF20%

VBB = 6 to 18V
+

0
L
H
L
H

1
H
L
L
H

2
H
H
L
H

3
H
H
H
L

4
H
H
H
H

5
L
L
H
H

6
L
H
H
H

7
L
H
L
L

0
L
H
L
H

1
H
L
L
H

2
H
H
L
H

3
H
H
H
L

* For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph
excitation (Ixx turns from high to low).
The OPEN detection function is invalid except in this sequence.

2-ph Stepper-motor Driver ICs SPF7211

Electrical Characteristics
Vsat Temperature Characteristics (Io=0.5A)

Diode VF Characteristics (IF=0.5A)


1.7
VFGO

VsatH

1
0.8
0.6
0.4

VsatL

1.5
Forward voltage VF (V)

Saturation voltage Vsat (V)

1.2

0.2

1.3
1.1
VFH

0.9

VFL

0.7

0
30 10 10

30 50

0.5
30 10 10

70 90 110 130 150

Junction temperature (C)

OSC Temperature Characteristics

70 90 110 130 150

Ta-PD Characteristics

55

40
Infinite heatsink equivalent
(Tc=25C)
j-tab 3.2C/W

53
FOSC
51

49

47

Power dissipation PD (W)

Oscillation frequency FOSC (kHz)

30 50

Junction temperature (C)

30

20

10 Copper foil area


(5.07.4mm, t=18m)
j-a 30.5C/W

Ct=2200pF
45
30 10 10

30 50

70 90 110 130 150

Junction temperature (C)

25

50

75

100

125

150

Ambient temperature Ta (C)

59

Full Bridge PWM Control DC Motor Driver ICs SI-5300

External Dimensions (unit: mm)

P-ch MOS for high side and N-ch MOS for low side in one package
Enable to drive DC5V
Possible to drive a motor at the LS-TTL, C-MOS Logic level
Guarantee Tj=Tch=150C
Built-in over current protection and thermal shut down circuits
Built-in diagnosis function to monitor and signal the state of each protection circuits
Built-in vertical current prevention circuits (Dead time is defined internally.)
No insulator required for Sanken's original package (SPM package)

4.80.2

(28.4)

(4)

(R0.8)
R-end

+0.2

0.750.1

+0.2

0.450.1

14 P2.030.1=(28.42)

Absolute Maximum Ratings


Parameter

Symbol

Ratings

Unit

40

20.5

350.3

(Ta=25C)

VM

Motor supply voltage

4.50.7

Conditions

a: Part No.
b: Lot No.

V
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Input terminal voltage

IN1

0.3 to 7

IN2

0.3 to 7

PWM

0.3 to 7

IO

IO (p-p)

17

Output current

Equivalent Circuit
VM

VM

PW

1ms, Duty

VM

50%
B

fPWM

PWM control frequency

20

kHz

Duty=20% to 80%

OCP

Pre-Rec

OCP
Pch1

Forward reverse rotation switch frequency*

fCW

500

Hz

Operating temperature

TOP

40 to +85

Tj, Tch

40 to +150

TSD

Q
R

40 to +150

Tstg
j-c

3.7

C/W

j-a

35

C/W

B
S

Dead
Time

IN1

Storage temperature

FF

Pch2

OUT1

Junction and channel temperature

PWM

ECU inside
VCC
PULL-UP
Resistor

OUT2
Nch1

PWM
down
edge
sense

Thermal resistance

DIAG
Nch2
A

A
OCP

OCP
B
Dead
Time

IN2

PD1

3.6

Without heatsink

PD2

33.7

With infinite heatsink

Power dissipation

Note: * The dead time for the length current prevention in positive and the reversing switch is set by
internal control IC. The set point in internal IC at the dead time is 20s (typical).
Please take into account the dead time and consider the load conditions when you use the IC.

Output saturation voltage

Ratings
min

typ

LGND

max

0.8

IO=3A

V, VO-PG

0.3

IO=3A

I L, L

100

VM=40V

I L, H

100

VM=40V

*
15 *3

VPWM: L

VPWM: H

10

10 2

tpHL
tpHL-tpLH

Static circuit current

H (Vth=2.5V typ)

IO=10A

0.8

IO=3A

1.0

IM1

22

mA

Stop mode

IM2

22

mA

Forward and reverse mode

16

mA

VIN, L
IIN, L

V
2.0

IIN, H

200

OUT1

t DIAG

20

ms

DIAG terminal voltage

VD L

Vth
VOUT
GND

VOUT*0.9

OUT terminal
GND
tpLH

Output transmission
time tpLH is time from
Vth (2.5V typ) of the
terminal of PWM to
output (VOUT *0.9) of
the output terminal.

ID SINK=1mA

Breake

Breake

High inpidance
High inpidance

IOUT (A)

*4

GND

OUT terminal
VOUT *0.1
tpHL

Protection circuit

Return to constant action


VM=2V

VM=2V
VM
IN1
IN2
PWM

Vth

GND

Output transmission
time tpHL is time from
Vth (2.5V typ) of the
terminal of PWM to
output (VOUT *0.1) of
the output terminal.

VM-OUT1
(Pch1 VDS)
VM-OUT2
(Pch2 VDS)
VOUT1-GND
(Nch1 VDS)
VOUT2-GND
(Nch2 VDS)
OUT1
OUT2

*4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit.

60

Stop
(Free Run)

OUT2
GND

VPWM (5V)

PWM terminal

Stop
(Free Run)

C=1F (typ)

*3: Output transmission time (tpHL)

VPWM (5V)

PWM terminal

Reverse
Duty OFF

High inpidance

Note:
*1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the
protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H 0V: L) is input to the
terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25C, fPWM=10kHz, VM=14V) are assumed
to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2).
It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time.

*2: Output transmission time (tpLH)

Reverse
Duty ON

IN2

VIN1=VIN2=VPWM=5V
1

DIAG output pulse width

Forward
Duty OFF

IN1

VIN1=VIN2=VPWM=0V

4,12
PGND

Brake mode
VIN1=VIN2=VPWM

16

0.3

Forward
Duty ON

VIN1=VIN2=VPWM

IOCP

8
LGND
Delay Capacitor
1F

Therminal name

OPC start current

Timing Chart

IO=10A

PWM

100

9
TDIAG

Pull-up Resistor
10k
(Open Collector)

L (Vth=2.5V typ)

IO=3A

3.0

SI-5300

10 DIAG
VCC

IM3

14, 15
OUT2

7 PWM

VIN, H

Input terminal current

6 IN1

1.0

VF H

3, 5, 13
VM
1, 2
OUT1

11 IN2
CPU

0.8

VF L

Forward voltage
characteristic of diode
between drain and source

Capacitor
220F
Battery

V, VM-VO

Output transmission time

PGND

Standard Connection Diagram

Conditions
VM=24V (2 min.)

tpLH

Input terminal voltage

Unit
V

Output leakage current

CDIAG
1F

PGND

(Unless, otherwise specified, Tj=Tch=25C, VM =14V, IO =3A)

18

VIN

Motor supply voltage

TDIAG

Relay

Electrical Characteristics
Symbol

DIAG
CONTROL

Parameter

3.60.5

(R0.8)

7.60.5

16.10.2

2.70.2

(4.5)

Features

IOUT (A)
TDIAG
DIAG DIAG Threminal
VCC=5V Pull-up

20ms
(min)

Full Bridge PWM Control DC Motor Driver ICs SI-5300

Electrical Characteristics
Output saturation voltage (Pch)

Output saturation voltage (Nch)

Forward voltage of Diode between drain and source

0.5

1.0

12
VM=14V

VM=14V

Ta=25C

10

0.4

0.8

Nch
MOS FET

Ta=85C
Ta=25C

0.4

Ta=40C

0.2

Ta=85C

0.3

Ta=25C

I FSD (A)

0.6

VVO -PG (V)

VVM -VO (V)

Ta=150C
Ta=150C

Ta=40C
0.2

2
0

I O (A)

0.2

0.4

I O (A)

Quiescent circuit current

0.6

1.2

0.6

Duty on

VM=14V

VM=14V

Brake

0.5
12

Duty off

Ta=150C

VO (V)

Stop

I SINK (mA)

0.4
I M (mA)

1.0

Current of input terminal (SINK current)

16

15

0.8

VFSD (V)

Voltage of input terminal (Threshold voltage)

25

20

Pch
MOS FET

4
0.1

Ta=150C
Ta=25C

Ta=40C

10

Ta=85C
Ta=25C

0.3

Ta=40C
0.2

4
5

0.1

I O=0A
Ta=25C

10

20

30

40

VM (V)

VIN1, IN2, PWM (V)

Current of input terminal (Source current)

VIN1, IN2, PWM (V)

VTDIAG VDIAG Characteristics

Thermal shut down protection

Pull-up resistance =3k

12

Ta=25C

Ta=150C
Ta=25C
Ta=40C

Ta=40C

10

20

30

40

VM (V)

0
100

Pch MOS FET Safe Operating Area (SOA)

150

175

200

Ta (C)

Nch MOS FET Safe Operating Area (SOA)

PD Ta Characteristics
40

100

100

Tc=25C

Tc=25C
1ms

1ms

10ms
I OUT (A)

10

100ms

10
10ms

100ms

0.3

0.3
2

125

VTDIAG (V)

Allowable Power Dissipation PD (W)

I OUT (A)

4
VDIAG (V)

Ta=150C

VDIAG (V)

IIN1, IIN2, PWM source (A)

10

VM=10V
I O=0A

VM=14V

I IN1=I IN2=PWM=0V

10
VM-OUT (V)

40

100

10
VOUT -PG (V)

40

100

35

Infinite heatsink (Tc =25C)

30
25
20
15
10
5

No heatsink

0
40 30

25

50

75

100

Ambient temperature Ta (C)

61

Full Bridge DC Motor Driver ICs SPF7301(under development)

External Dimensions (unit: mm)

A DMOS of low ON resistance (0.1 typ) is mounted on the high and low side
power elements
Two input signals control the forward/reverse/brake of a DC motor
Current limit and overcurrent protection circuits
Low voltage and thermal protection, excess input detecting output and input
terminal open protection

Symbol

Ratings

Unit

VB
VIN1,VIN2
VEN
VDI
Io
IoPeak
VDIAG
IDIAG
P D1
P D2
Tj
Top
Tstg

0.3 to 36
0.3 to 6
0.3 to 12
0.3 to 6
7
15
0.3 to 6
3
39
4
40 to 150
40 to 105
40 to 150

V
V
V
V
A
A
V
mA
W
W
C
C
C

j-c

3.2

C/W

j-a

31

C/W

Junction temperature
Operating temperature
Storage temperature
Thermal resistance
(junction to case)
Thermal resistance
(junction to ambient air)

13.04
20

10
0.4 0.05

a) Part No.
b) Lot No.

DIAG terminal sink current


With an infinite heatsink mounted

*1

Standard Circuit Diagram


VB

Ratings

Unit

Main power supply voltage


DI terminal input voltage
Input terminal input voltage
Output current
DIAG terminal voltage
Operating temperature

VB
VDI
VINx
Io
VDIAG
Top

8 to 18
0.3 to 5.3
0.3 to 5.3
1
0.3 to 5.3
40 to 105

V
V
V
A
V
C

Full Brige Driver IC

Main power supply current


Low voltage protection
operation voltage
UVLO hysteresis voltage
Output terminal leak current

Output DMOS RDS (ON)

Forward voltage
characteristics between
output DMOS and DS

Overcurrent limiting
operation current

OPC start current


Input terminal voltage
VIN1, VIN2
Input terminal current
VIN1, VIN2
DI terminal voltage
DI terminal current
EN terminal input voltage
EN terminal input current
DIAG terminal output voltage
DIAG terminal output current
DIAG terminal leak current

Input delay time

Overvoltage protection operation voltage


OVP hysteresis width
Thermal protection starting temperature
Thermal protection hysteresis width

62

Ratings
typ
15

max
100
7.0
6.5

5.0
4.5
0.5
100

4.5
4.5
4.5
4.5

100
100
100
100
1.5
1.5
1.5
1.5
7
7
7
7
15
15
15
15

100
200
200
200
200

10
10
10
10

2
0.8
100
100
2
0.8
100
100
0.8

4
100
10
0.8

10
1.5
10

35
151

40
5
165
15

15
20
15
6
6
4
45

M
OUT2

Cin

R1

R2
RDI

PGND

LGND

* Recommended connection parts


Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF
DIAG terminal pull-up resistance RDIAG: 20k
Input terminal pull-down resistance R1, R2, RDI: 10k

Unit
mA
A
V
V
V
A
A
m
m
m
m
V
V
V
V
A
A
A
A
A
A
A
A
V
V
A
A
V
V
A
A
V
A
A
V
mA
A
S
S
S
S
S
V
V
C
C

OUT1

SFP7301

Remarks

(Tj = 30 to 125C, VB = 14V, EN = DI = 5V, Ccp = 33nF,


RDIAG = 20k unless otherwise specified) * 2

Electrical Characteristics

RDIAG

IN1

DI

Symbol

min

Ccp
DIAG

IN2

Parameter

Vcc

EN CP

Recommended Operation Range

IBB1
IBB2
VuvloH
VuvloL
UVLO
IleakHS
IleakLS
RDS(ON)_1H
RDS(ON)_2H
RDS(ON)_1L
RDS(ON)_2L
VF_H1
VF_H2
VF_L1
VF_L2
Iocp1_H1
Iocp1_H2
Iocp1_L1
Iocp1_L2
Iocp2_H1
Iocp2_H2
Iocp2_L1
Iocp2_L2
VINxH
VINxL
IINxH
IINxL
VDIxH
VDIxL
IDIxH
IDIxL
VENth
IENH
IENL
VDIAG
IDIAG
IDIAGL
TdON
TdOFF
Tr
Tf
Tddis
VOVP
VOVP
Ttsd_ON
Ttsd

0.250.05

1kHz, Duty 1%, Pulse 10S

Power
supply

Symbol

+0.15

+0.15

1.270.25

Note: *1: With glass epoxy + copper foil board (size 5.0 7.4cm; t: glass epoxy = 1.6mm /copper foil = 18m)

Parameter

20.2

Remarks

10.50.3

11

2.50.2

Parameter

Power dissipation

Fin
thickness

(Ta=25C)

Main power supply voltage


Input terminal input voltage
EN terminal voltage
Disable terminal input voltage

DIAG output current


DIAG inflow current

1.0 0.05

0.2

Absolute Maximum Ratings

Output current

+0.1

14.740.2

7.50.2

Features

Conditions
For VEN = 0V

Io1 = 1A
Io2 = 1A
Io1 = 1A
Io2 = 1A

VDI = 5V
VDI = 0V

VDI = 5V
VDI = 0V
VEN = 5V
VEN = 0V
IDIAG = 0.5mA
For VDIAG = 1.6V
Time from VINxH to Voutx0.2
Time from VINxL to Voutx0.8
Time of Voutx from 20% to 80%
Time of Voutx from 80% to 20%
Time from DIthH to Voutx0.2

*3
*3

Note:
*2: For the electrical characteristics for Tj = 40 to 150C, the design warranty applies to the above specification values.
*3: Thermal protection starting temperature is 165C (typ) by design. The above parameters are the design specifications.

63

High Voltage Full Bridge Drive ICs SLA2402M

Features

External Dimensions (unit: mm)

One Package Full Bridge Driver Consisted of High Voltage IC and Power
MOS FETs (4 pieces)
High Voltage Driver which accepts direct connection to the input signal line
External components such as high voltage diodes and capacitors are not required

3.2 0.15

Ratings

Unit

VM

500

Conditions
0.65

+0.2
0.1

16.00.2

13.00.2

9.90.2

Lead plate thickness


resins 0.8 max

9.5 min

Symbol

4.80.2
1.70.1

2.7

Parameter
Power source voltage

Ellipse 3.2 0.15 3.8

16.4 0.2

8.5 max

Absolute Maximum Ratings

31.0 0.2
24.4 0.2

+0.2

2.450.2

1.0 0.1

+0.2

17 P1.68 0.1 =28.56

Input voltage

VIN

15

Output voltage

VO

500

Output current

IO

15

PW

Power dissipation

PD

5 (Ta=25C)

Without heatsink

Storage temperature

Tstg

40 to +125

Operation temperature

Topr

40 to +105

0.55 0.1

31.5 max

250s

a: Part No.
b: Lot No.

* Power GND (D terminal) to -HV (-HV terminal) voltage.

Block Diagram

Electrical Characteristics
Parameter

Symbol

Power MOS FET output


breakdown voltage

BVOUT

Ratings
min

typ

Unit

max

Conditions
7

500

IO=100A

MOSQ1

IOUT (off)

High-side Power MOS FET


output on-state voltage
Low-side Power MOS FET
output on-state voltage

100

MOSQ'2

LO1

GL1

15
OUT2

MIC

MOSQ'1

VO=500V

MOSQ2
HO2

HO1

OUT1

Power MOS FET output


leakage voltage

+12V

VCC

D1

VIN1

HV

VIN2

LO2
L GND

GL2

IO=0.4A, VIN=10V

VOUT (on) 1

0.28

0.4

0.52

VOUT (on) 2

1.4

2.0

2.6

IO=2A, VIN=10V

VOUT (on) 1

0.28

0.4

0.52

IO=0.4A, VGL=10V

VOUT (on) 2

1.4

2.0

2.6

IO=2A, VGL=10V

ICC 1

3.0

mA

VCC=4.5 to 15V

10

11

13

16

CPU

* Dotted Line: Outside Connection

Quiescent circuit current


ICC 2

4.0

mA

VCC=10V, VM=400V

Operating circuit current

ICC 3

4.0

mA

VCC=10V, VM=400V

Input voltage (High level)

VIH

Input voltage (Low level)

VIL

Delay time

Operating voltage

0.8VCC
0.2VCC

VCC=4.5 to 15V

VCC=4.5 to 15V

Timing Chart

t d (on)

1.4

VCC=10A, VIN=10V,

t d (off)

3.3

VM=85A,

2.5

IO=0.41A

VCC

15

40 to +105C

Ignition

VCC
IN1
IN2

* About delay time

HO1

Signal input waveform vs output waveform

LO2

1 Highside switch turn-on, turn-off

2 Lowside switch turn-on, turn-off


HO2

VIN1
0V

10%

VIN1

10%

10%

0V

10%

LO1
HV

0V

0V
10%

10%

OUT2-GND

td (on)

td (on)

Measurement Circuit
VIN2

RL
VOUT1

VOUT2

td (on)

Conditions
VCC=10V, VIN=10V (pulse)
VM=85V
IO=0.41A (RL=207)

* When pulse signal is inputted to VlN1,


VIN2

VIN1

VM

64

100V

VOUT2

* t: t = td (on) td (off)

VIN1

0V

10%

10%
VOUT1

RL on solid line is ON and dotted line


RL is off.
On the contrary, when pulse signal is
inputted to VlN2, RL on dotted line is
ON and dotted line RL is off.

td (on)

400V

OSC 400Hz

17

High Voltage Full Bridge Drive ICs SLA2402M

Electrical Characteristics
Quiescent circuit current supplied high voltage

Quiescent circuit current

25C

40C
1.0
0.5

2.5

150C

2.0

105C
1.5
25C
1.0
40C
0.5
0

0
0

10

15

100

300

400

VIN=0V
VM=400V
105C
3
25C
2
40C
1

10

15

12V
1.5
10V
9V

1.0
0.5

4.5V
200

300

400

VCC =VIN =10V

10V

1.5

9V
1.0
0.5

4.5V

40C

0
2

100

500

Ta=25C
8

VCC=15V
VCC=9V

VCC=
4.5V

0
0

50

100

150

10

15

Input voltage VIN (V)

Ambient temperature (C)

Output on-state voltage

400

10

Output current (A)

300

Gate drive voltage

0
50

200

High voltage VM (V)

Gate drive voltage VGL (V)

Gate drive voltage VGL (V)

Input threshold voltage


8

5
Input threshold voltage VIH, VIL (V)

VCC=VIN=10V
4

3
I O=2A
2

1
I O=0.4A
0
50

12V

25C

VCC=
15V

2.0

VCC=10V

500

2.5

500

10

105C

400

0
100

Gate drive voltage

150C

300

3.0

High voltage VM (V)

200

Ta=25C

VCC=
15V

2.0

10

100

Operating circuit current

2.5

20

Output on-state voltage

0.5

3.5

Operation voltage VCC (V)

1.0

0
5

40C

High voltage VM (V)

Ta=25C
150C

25C

1.5

500

3.0
Quiescent circuit current ICC2 (mA)

Quiescent circuit current ICC2 (mA)

200

Quiescent circuit current

105C
2.0

High voltage VM (V)

Quiescent circuit current supplied high voltage

150C

2.5

0
0

20

Operation voltage VCC (V)

Output on-state voltage (V)

VCC=VIN1(2)=10V

Operating circuit current ICC3 (mA)

Quiescent circuit current ICC1 (mA)

1.5

3.0
VIN=0V
VCC=10V

Operating circuit current ICC3 (mA)

2.0

Quiescent circuit current ICC2 (mA)

2.5

150C
105C

VIN=0V

Output on-state voltage (V)

Operating circuit current

3.0

3.0

50

100

Ambient temperature (C)

150

VCC=10V
VIH

6
5
4

VIL

3
2
1
0
50

50

100

150

Ambient temperature (C)

65

High Voltage Full Bridge Drive ICs SLA2402M

Electrical Characteristics
High side switch turn-on, off

High side switch turn-on, off

5.0

5.0
Ta=25C
VM=85V, I O=0.41A

5.0
VM=85V, I O=0.41A
VCC=10V

4.0

Ta=25C
VM=85V, I O=0.41A
turn-off

turn-off
3.0

2.0

4.0
turn-on, off (s)

4.0
turn-on, off (s)

turn-on, off (s)

Low side switch turn-on, off

3.0

2.0

turn-off
3.0

2.0

turn-on
turn-on

1.0

0
6

10

12

14

0
50

16

Operation voltage VCC (V)

turn-on, off (s)

3.0

2.0
turn-on
1.0

50

100

150

Power derating curve


6

Power dissipation (W)

150

without heatsink

4
3
2
1

50

100

150

10

12

14

16

Operation voltage VCC (V)

Safe operating area (Power MOS FET)


RDS (on)
limited

10

10

0.1

100s
1ms
1
10ms
0.1

0.01

0.001
0.0001 0.001

100

Ta=25C
Single pulse
0.01

0.1

Power time (s)

Ambient temperature (C)

Ambient temperature (C)

Transient thermal resistance (C/W)

turn-off

4.0

66

100

100
VM=85V, I O=0.41A
VCC=10V

0
50

50

Transient thermal resistance characteristics

5.0

0
0

Ambient temperature (C)

Low side switch turn-on, off

0
50

1.0

Drain current (A)

turn-on

1.0

10

100

Ta=25C
Single pulse
0.01
10

100
Drain to source voltage (V)

1000

67

High Voltage Full Bridge Drive ICs SLA2403M

Features

External Dimensions (unit: mm)

One Package Full Bridge Driver Consisted of High Voltage IC and Power
MOS FETs (4 pieces)
High Voltage Driver which accepts direct connection to the input signal line
External components such as high voltage diodes and capacitors are not required

3.2 0.15

Ratings

Unit

VM

500

Input voltage

VIN

15

Output voltage

VO

500

IO

Tc=25C

IO (peak)

15

PW

Conditions
0.65

+0.2
0.1

16.00.2

13.00.2

9.90.2

Lead plate thickness


resins 0.8 max

9.5 min

Symbol

+0.2

2.450.2

1.0 0.1

+0.2

17 P1.68 0.1 =28.56

0.55 0.1

31.5 max

Output current

Power dissipation

4.80.2
1.70.1

2.7

Parameter
Power source voltage

Ellipse 3.2 0.15 3.8

16.4 0.2

8.5 max

Absolute Maximum Ratings

31.0 0.2
24.4 0.2

a: Part No.
b: Lot No.

250s

5 (Ta=25C)

Without heatsink

40 (Tc=25C)

With infinite heatsink

PD

Storage temperature

Tstg

40 to +125

Operation temperature

Topr

40 to +125

Junction temperature

Tj

150

Block Diagram

* Power GND (D terminal) to -HV (-HV terminal) voltage.

Electrical Characteristics
Parameter

Symbol

MOSQ2

MOSQ1
4

Ratings
min

Power MOS FET output


breakdown voltage

BVOUT

Power MOS FET output


leakage voltage

IOUT (off)

High-side Power MOS FET


output on-state voltage

VOUT (on)

0.18

Lowside Power MOS FET


output on-state voltage

VOUT (on)

0.18

typ

Unit

max

Conditions

D1

VCC

HO1

OUT1

VIN1

IO=100A

100

VO=500V

0.26

0.34

IO=0.4A, VIN=10V

0.26

0.34

IO=0.4A, VGL=10V

500

MOSQ'2
LO2

LO1

GL1

HV

VIN2

10

GL2

L GND

11

13

17

CPU

* Dotted Line: Outside Connection

ICC 1

3.0

mA

VCC=6 to 15V

ICC 2

4.0

mA

VCC=10V, VM=400V

Operating circuit current

ICC 3

4.0

mA

VCC=10V, VM=400V

Input voltage (High level)

VIH

Input voltage (Low level)

VIL

Quiescent circuit current

Delay time

0.8VCC
0.2VCC

VCC=6 to 15V

VCC=6 to 15V

VCC
IN1

t d (on)

2.0

VCC=10A, VIN=10V,

t d (off)

3.0

VM=85V, IO=0.41A

40 to +125C

VCC

Operating voltage

15

Timing Chart

Ignition

IN2
HO1

* About delay time

LO2

Signal input waveform vs output waveform


HO2

1 Highside switch turn-on, turn-off

2 Lowside switch turn-on, turn-off


LO1

VIN1
0V

10%

VIN1

10%

10%

0V

10%

HV

0V
10%

10%
VOUT1

10%

10%

td (on)

td (on)

VOUT2

td (on)

* t: t = td (on) td (off)
Measurement Circuit
VIN1

VIN2

RL
VOUT1

VOUT2

VIN2

VIN1

VM

68

0V
100V

0V

Conditions
VCC=10V, VIN=10V (pulse)
VM=85V
IO=0.41A (RL=207)

* When pulse signal is inputted to VlN1,


RL on solid line is ON and dotted line
RL is off.
On the contrary, when pulse signal is
inputted to VlN2, RL on dotted line is
ON and dotted line RL is off.

td (on)

OUT2-GND

400V

D2

15
OUT2

MIC

MOSQ'1

HO2

OSC 400Hz

14
16

High Voltage Full Bridge Drive ICs SLA2403M

Electrical Characteristics
Quiescent circuit current

Quiescent circuit current supplied high voltage

2.5

85C
2.0
25C
1.5
40C
1.0
0.5

4.0
VIN=0V
VCC=10V

2.5

125C

2.0

85C
1.5
25C
1.0
40C
0.5
0

10

15

100

400

85C
25C

40C

10

15

40C

1.0
0.5
0

2.5
2.0

12V

1.5

10V
9V

1.0

6V

0.5

100

200

300

400

VCC=
15V

2.5

12V

2.0
10V
9V

1.5
1.0

6V
0.5
0

100

200

300

400

500

High voltage VM (V)

Gate drive voltage

10

10
Ta=25C

VCC=VIN=10V

150C

125C

85C

25C

40C

Output current

6
VCC=6V
4

0
50

0
4

VCC=15V

VCC=10V
Gate drive voltage VGL (V)

Input threshold voltage VIH (V)

500

3.0

500

Input threshold voltage

400

3.5

High voltage VM (V)

Output on-state voltage

300

0
0

20

200

Ta=25C
VCC=
15V

3.0

Operation voltage VCC (V)

100

Operating circuit current

0
0

25C
1.5

500

Operating circuit current ICC3 (mA)

85C
2.0

High voltage VM (V)

Ta=25C

125C

125C
2.5

4.0

150C
Quiescent circuit current ICC2 (mA)

VCC=10V
VCC=
6V

0
0

50

100

150

200

Ambient temperature (C)

I OUT (A)

Output on-state voltage

Input threshold voltage

10

15

Input voltage VIN (V)

Gate drive voltage


10

7
Input threshold voltage VIL (V)

VCC=VIN=10V
3

I O=2A

1
I O=0.4A
0
50

50

100

Ambient temperature (C)

150

6
Gate drive voltage VGL (V)

Quiescent circuit current ICC2 (mA)

300

Quiescent circuit current supplied high voltage

VOUT (ON) (V)

200

3.5
VIN=0V
VM=400V

150C

3.0

High voltage VM (V)

Quiescent circuit current supplied high voltage


5

3.5

0
0

20

Operation voltage VCC (V)

Output on-state voltage

VCC=VIN1(2)=10V
150C

Operating circuit current ICC3 (mA)

150C
125C

Quiescent circuit current ICC2 (mA)

Quiescent circuit current ICC1 (mA)

VIN=0V

Output on-state voltage VOUT (ON) (V)

Operating circuit current

3.0

3.0

5
4
VCC=10V

3
2

VCC=6V

8
VCC=10V
6
VCC=6V

1
0
50

50

100

Ambient temperature (C)

150

0
50

50

100

150

Ambient temperature (C)

69

High Voltage Full Bridge Drive ICs SLA2403M

Electrical Characteristics
High side switch turn-on, off

High side switch turn-on, off

5.0

VM=85V, I O=0.41A
VCC=10V

2.0
turn-on

3.0

2.0

turn-on

10

12

0
50

14

Operation voltage VCC (V)

turn-off
3.0

turn-on

1.0

50

100

150

100

150

Power derating curve


50
Tc=25C

30

20

10
without heatsink

50

100

150

10

12

14

Operation voltage VCC (V)

Safe operating area (Power MOS FET)


100
RDS (on)
limited

10

10s
100s

10

0.1

1ms
1
10ms
0.1

0.01

0.001
0.001

Ta=25C
Single pulse
0.01

0.1

Power time (s)

Ambient temperature (C)

Ambient temperature (C)

Transient thermal resistance (C/W)

4.0

0
50

50

100
VM=85V, I O=0.41A
VCC=10V

40

0
0

Transient thermal resistance characteristics

5.0

0
50

2.0

Ambient temperature (C)

Low side switch turn-on, off

2.0

turn-off

1.0

Drain current (A)

3.0

turn-on
1.0

turn-on, off (s)

4.0
turn-off

turn-on, off (s)

turn-off

3.0

1.0

PD (W)

Ta=25C
VM=85V, I O=0.41A

4.0
turn-on, off (s)

turn-on, off (s)

4.0

Power derating

5.0

5.0
Ta=25C
VM=85V, I O=0.41A

70

Low side switch turn-on, off

10

100

Ta=25C
Single pulse
0.01
10

100
Drain to source voltage (V)

1000

71

High Voltage Full Bridge Drive ICs SMA2409M

Features

External Dimensions (unit: mm)

One Package Full Bridge Driver Consisted of High Voltage IC and Power
IGBT (4 pieces)
High Voltage Driver which accepts direct connection to the input signal line

31.0 0.2

Absolute Maximum Ratings

(Ta = 25C)

Symbol

Ratings

Unit

VM

500

Input voltage

VIN

15

Operation voltage

Vcc

15

Vo

Output voltage

500

(10.4)

Parameter
Power supply voltage

2.70.2

10.20.2

4.00.2

Conditions
Power GNG to HV
+0.2

+0.2

1.16 0.1

0.65 0.1
+0.2

1.2 0.2

0.55 0.1

14 P2.03 0.1= (28.42)

(root dimensions)

(root dimensions)

Output current (DC)


Output current (pulses)

Io(DC)

Io(pulse)

15

a: Part No.
b: Lot No.

W
Tc = 25C

20
j-a

31.2

j-c

6.2

Operating temperature

Topr

40 to +105

Storage temperature

Tstg

40 to +150

Junction temperature

Tj

150

IGBT single pulse


avalanche resistance

EAS

mJ

VDD = 30V, L = 1mH, Unclamped, Ic = 3.2A

ESD protection

ESD

kV

Human body model (C = 100pF, R = 1.5k)

Thermal resistance

31.3 0.2

Single pulse (PW = 50s max.)

PD

Power dissipation

CW

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Tc = 25C

Block Diagram

Electrical Characteristics

(Ta = 25C)
4

Parameter
IGBT output breakdown voltage

BVOUT

570

Io = 0.4A, VIN (or VGL) = 10V

1.3

1.8

Io = 2.0A, VIN (or VGL) = 10V

Icc1

3.0

mA

Vcc = 10V, VM = VIN = 0V

Icc2

4.0

mA

Vcc = 10V, VM = 400V, VIN = 0V

Icc3

4.0

mA

Vcc = 10V, VM = 400V, VIN1 (or VIN2) = 10V

High side
Delay time*

Low side

16

0.8Vcc

t d (on)

0.6

0.7

0.8

t d (off)

1.8

2.2

2.6

t d (on)

0.8

0.9

1.0

t d (off)

1.3

1.6

1.9

2.5

t d = H/S t d (off) - L/S t d (on)


or L/S t d (off) - H/S t d (on)

15

Ta = 40 to +105C

Vcc

LO1
VIN1

HV VIN2 L GND

IGBT Q'2
GL2

10

11

13

CPU

Vcc = 9 to 15V

* Dotted Line: Outside Connection

Timing Chart

VM = 85V, Io = 0.41A
Vcc = 10V
VIN = 10V (Out Stage = ON)
VIN = 0V (Out Stage = OFF)

A Drive Example
Ignition

OSC250Hz

VCC
IN1
IN2
LO1
LO2

Recommended Operation Range


Parameter

min

td

typ

0V
85V
400V

Ratings

Symbol

Dead time

HVGND

max

Unit

85V
400V

5.0

OUT1GND 0V

Conditions
Ta = 40 to +105C

0V
85V

OUT2GND
400V

* About delay time


Signal input waveform vs output waveform
1 Highside switch turn-on, turn-off
VIN1
0V

10%

2 Lowside switch turn-on, turn-off


VIN1
0V

10%

0V

0V
10%

10%

Vout1
td(on)

VIN2

RL
VIN1
VOUT1
VIN2

10%

Vout2

td(off)

Measurement Circuit

72

10%

Conditions
VCC=10V, VIN=10V (pulse)
VM=85V
IO=0.41A (RL=206)

* When pulse signal is inputted to VlN1,

VOUT2

VIN1

RL on solid line is ON and dotted line


RL is off.
On the contrary, when pulse signal is
inputted to VlN2, RL on dotted line is
ON and dotted line RL is off.

10%

10%

12
OUT2

LO2

Vcc = 9 to 15V

VGL

td
Operating voltage

0.2Vcc

D2

HO2

MIC

Vo = 500V

0.8Vcc

IGBT Q'1
GL1

Io = 100A, Tj = 25C

VIL
Low-side IGBT gate drive voltage

VIH

IGBT Q2

VCC

OUT1

1.2

VOUT (on)

Input threshold voltage

max

Conditions

100

IOUT (off)

IGBT output ON voltage

Operating circuit current

typ

Unit

1.0

IGBT output leak current

Quiescent circuit current

min

IGBT Q1
HO1

Ratings

Symbol

D1

14

High Voltage Full Bridge Drive ICs SMA2409M

Electrical Characteristics
Quiescent circuit current

Quiescent circuit current supplied high voltage


4.0
105C

2.5
25C

2.0
1.5

40C

1.0
0.5
0

3.5
3.0

150C

2.5

105C

2.0
25C

1.5
40C

1.0
0.5
0

10

15

100

Quiescent circuit current supplied high voltage

Quiescent circuit current ICC2 (mA)

40C

10

15

12V

2.0
10V
9V

1.5
1.0

6V

0.5

4.5V

300

400

Input threshold voltage VIL (V)

1.8
1.6
I O=2A

1.2
1.0
I O=0.4A

0.8

100

Ambient temperature (C)

6V

0.5

4.5V

100

200

150

300

400

500

VCC=15V

12

6
VCC=9V

10
8

VCC=9V

6
4
2
0

50

100

150

200

14

12

6
VCC=15V

4
3

VCC=9V

0
50

15

Gate drive voltage

10

Input voltage VIN (V)

VCC=15V

10
8
VCC=9V

6
4
2

1
50

1.0

Gate drive voltage

Input threshold voltage

VCC=VIN=10V

10V
9V

Ambient temperature (C)

2.0

0.6
50

1.5

14

I OUT (A)

Output on-state voltage

1.4

12V

2.0

High voltage VM (V)

0
50

0.5
Output current

2.5

500

Gate drive voltage VGL (V)

1.0

500

VCC=
15V

Ta=25C
Input threshold voltage VIH (V)

VOUT (ON) (V)

200

VCC=15V

1.5

400

3.0

High voltage VM (V)

150C
105C
25C
40C

300

Operating circuit current

10

200

0
100

Input threshold voltage

100

Ta=25C

VCC=
15V

2.5

2.0

0.5

High voltage VM (V)

3.0

20

Output on-state voltage

40C

1.0

3.5

Operation voltage VCC (V)

VCC=VIN=10V

25C

1.5

0
0

105C

2.0

500

Gate drive voltage VGL (V)

Quiescent circuit current ICC2 (mA)

25C

Output on-state voltage

400

Ta=25C

300

3.5

125C

200

Quiescent circuit current supplied high voltage

150C

VIN=0V
VM=400V

150C

2.5

High voltage VM (V)

Operation voltage VCC (V)

3.0

0
0

20

Operating circuit current ICC3 (mA)

Output on-state voltage VOUT (ON) (V)

VCC=VIN1(2)=10V
Operating circuit current ICC3 (mA)

3.0

3.5

VIN=0V
VCC=10V

150C

VIN=0V

Quiescent circuit current ICC2 (mA)

Quiescent circuit current ICC1 (mA)

3.5

Operating circuit current

50

100

150

Ambient temperature (C)

200

0
50

50

100

150

Ambient temperature (C)

73

High Voltage Full Bridge Drive ICs SMA2409M

Electrical Characteristics
High side switch turn-on, off
3.5

2.5

3.0
t d (off)

2.0
1.5
1.0

2.0

1.5

2.5

t d (off)

2.0
1.5
1.0

t d (on)

t d (off)

1.0
t d (on)

0.5

t d (on)

0.5

0.5

0
9

11

13

0
50

15

Operation voltage VCC (V)

0
0

50

100

150

Ambient temperature (C)

Low side switch turn-on, off

Transient thermal resistance characteristics

2.5
Transient thermal resistance (C/W)

t d (off)

1.5

1.0

t d (on)

0.5

11

13

15

IGBT ASO characteristics

100

2.0

Operation voltage VCC (V)

100

10

Collector current (A)

turn-on, off (s)

Low side switch turn-on, off

turn-on, off (s)

3.0

turn-on, off (s)

turn-on, off (s)

High side switch turn-on, off

10

100s

1
1ms

0.1
Ta = 25C
Single pulse
10ms

0
50

50

100

150

Power derating curve


5

Power derating

PD (W)

without heatsink

50

100

Ambient temperature (C)

74

0.01

0.1

Power time (s)

Ambient temperature (C)

0
50

0.01
0.001

150

10

100

0.1
10

100
Collector-emitter voltage (V)

1000

75

Custom ICs
Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips.
Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available.
Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic
devices.
Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic
IC configuration.

Features
All semiconductor chips used are

Examples of Sanken Automotive Hybrid ICs

manufactured by Sanken.
Main product lineup consists of
power ICs produced out of many

Lead frame type


multi-chip power IC

One-chip power IC

Lead frame type


power hybrid IC with
ceramic substrate

High-output high-breakdown voltage IC


Simplified integration of custom circuits
Distribution of unit functions
(Actuators may be built in the device)

years' experience of Sanken.


Uses monolithic chips with flip-chip
construction.
Mainly available in miniature
transfer-mold packages.

Examples of Custom Hybrid IC


Products
Regulators for alternators
Igniters
Power supply for microcomputer
system
Power steering control IC
Motor and actuator driver
Others

Surface-mount
power IC

76

Custom ICs

External Dimensions (unit: mm)

4.2

4.0

20.2

16.9

19.9

4.0

25.25

9.0

10.0

9.0

5.0

15.6

STA 10pin

STA 8pin

FM205

MT-100

SMA15pin
4.0

4.0

SLA18pin

16.0

3GR-F

3GR-M
5.5

5.5

19.8

23

16.0

STR-S

SPM

5.5

24.2

23

15.6

4.8

31.0

4.8

31.0

4.8

31.0

10.2

10.2

31.0

23

31.0

SLA15pin

SLA12pin

16

SMA12pin

SMD16pin

SPF16pin
12.05
16 15 14 13 12 11 10 9
9

16.1

7.5

6.8

9.8

16

Pin 1

20.0

8
2

2.5

4.0

SPF20pin

10.5

4.8

35

SPF24pin
+0.1

17.28

1.0 0.05
Fin
thickness

24

13

7.5

20.2

7.5

0.2

11

10.50.3

20

10.6

14.740.2
13.040.2

10
1

+0.15

0.4 0.05

2.50.2

1.270.25

12

+0.15

0.25 0.05

2.5

77

78

2 Discretes
2-1. Transistors

2-2. MOS FETs


.........................................

2-1-1. Transistors

80

2-2-1. MOS FETs

.........................................

108

...

108

......

80

2SK3710 (60V/70A/6m, Surface-mount)

....................................

81

2SK3711 (60V/70A/6m) .............................. 109

12A) .................................... 82

2SA1488/1488A (60V/4A, 80V/4A)


2SA1567 (50V/12A)

.....................................

83

2SK3724 (60V/80A/5m, Surface-mount) ... 110


2SK3800 (40V/70A/6m, Surface-mount) .. 111

...................................

84

2SK3801 (40V/70A/6m) .............................. 112

2SC3852 (60V/3A) ........................................... 85

2SK3803 (40V/85A/3m, Surface-mount) ... 113

2SA1568 (60V/

2SA1908 (120V/8A)

2SB1622 (200V/15A)
2SC4024 (50V/10A)

........................................
......................................

87

........................................

88

2SC4065 (60V/12A)
2SC4153 (120V/7A)

2SK3851 (60V/85A/4.7m)

..........................

114

...

115

FKV460S (40V/60A/9m, Surface-mount)


FKV660S (60V/60A/14m, Surface-mount)

89

....................................

90

SDK06 (525V/3A/0.25, Surface-mount 4-circuits) 117

........................................

91

SDK08 (50V/4.5A/0.08, Surface-mount 4-circuits)

...........................................

92

SDK09 (12V/6A/0.2, Surface-mount 4-circuits) 119

.................................

93

SLA5027 (60V/12A/0.08, 4-circuits)

2SD2382 (605V/6A)
2SD2633 (150V/8A)

MN611S (11510V/6A)

MN638S (38050V/6A) ................................... 94

..........

117

118

120

SLA5098 (40V/20A/0.017, 6-circuits) ....... 121


..........

...........

95

SMA5113 (450V/7A/1.1, 4-circuits)

............................

96

STA508A (120V/6A/0.2, 4-circuits) ........... 123

96

STA509A (525V/3A/0.25, 4-circuits)

SSD103 (655V/6A, Surface-mount)


2-1-2. Transistor Arrays

2-2-2. MOS FET Arrays

...........................

116

..................................

2SD2141 (38050V/6A)

FP812 (100V/8A)

86

SDA03 (60V/6A, Surface-mount 4-circuits)

.......

122

124

SDA04 (60V/6A, Surface-mount 2-circuits) 97


SDC09 (655V/6A, Surface-mount 2-circuits)
SLA8004 (60V/12A, 55V/12A, H-bridge)

98

.........

99

SPF0001 (11510V/6A, Surface-mount 2-circuits) 100


STA315A (355V/2A, 3-circuits)

..................

101

STA335A (355V/3A, 2-circuits)

..................

102

STA415A (355V/2A, 4-circuits)

..................

103

STA460C (6010V/6A, 2-circuits) .............. 104


STA461C (655V/6A, 2-circuits)

................

105

STA463C (11510V/6A, 2-circuits) ............ 106


STA464C (655V/6A, 4-circuits)

..................

107

2-3 Thyristors
2-3-1. Reverse Conducting Thyristors .. 125
TFC561D (600V, 430A, 1200A/s)

..............

125

TFC562D (600V, 600A, 1600A/s)

..............

126

..........................

127

2-4. Diodes
2-4-1. Alternator Diodes

..

128

...................

129

..........

130

2-4-2. High-voltage Diodes for Igniter


2-4-3. Power Zener Diodes

2-4-4. General-purpose Diodes

79

Power Transistor 2SA1488/1488A

IEBO
V(BR) CEO
hFE
VCE (sat)
fT
COB

VCB =
VEB = 6V
IC = 25mA
VCE = 4V, IC = 1A
IC = 2A, IB = 0.2A
VCE = 12V, IE = 0.2A
VCB = 10V, f = 1MHz

10.0

a
b

RL
()
6

IC
(A)
2

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
200

2.54

t on
t stg
tf
IB2
(mA) (s)
(s)
(s)
200 0.25typ 0.75typ 0.25typ

0.45

2.54
2.2

a) Part No.
b) Lot No.
(Unit: mm)

B C E

IC VCE Characteristics (typ.)


60mA

50mA
40mA

1A
0
0

0
0.01

0.05 0.1

VCE (V)

0.5

)
tu re

tu re

p e ra

1.0

1.5

VBE (V)

hFE IC Temperature Characteristics (typ.)


(VC E = 4V)

500

e te
m

0.5

IB (A)

hFE IC Characteristics (typ.)

(C a s

C
125

2A

re)
atu
per

IC = 3A

IB = 5mA

p e ra

tem

0.5

3 0 C

10mA

se

20mA

1.0

e te
m

VCE (sat) (V)

30mA

IC (A)

IC (A)

( VC E = 4 V)

(C a s

IC VBE Temperature Characteristics (typ.)

1.5

2 5 C

0m

VCE (sat)IB Characteristics (typ.)

(Ca

C0.5

2.6

1.35
1.35
0.85

Typical Switching Characteristics (common emitter)


VCC
(V)
12

4.2
2.8

3.3

16.9

ICBO

(13.5)

V
V
V
A
A
W
C
C

Test Conditions

VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

Symbol

Unit

External Dimensions TO220F (full-mold)

8.4

Symbol

(Ta = 25C)
Ratings
Unit
2SA1488 2SA1488A
A
100max
100max
60
80
V
A
100max
60min
80min
V
40min
V
0.5max
15typ
MHz
90typ
pF

0.8

Ratings
2SA1488 2SA1488A
80
60
60
80
6
4
1
25 (Tc = 25C)
150
55 to +150

3.9

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

j-a t

(VC E = 4 V )

200

Characteristics

125C

100

(C/W)

30C

hFE

hFE

25C

100

Typ

j-a

50
50

20
0.01

0.1

0.5

20
0.02

0.1

IC (A)

10

100

IC (A)

f T IE Characteristics (typ.)

PC Ta Derating
30

10
5

50

100ms

natural air cooling


Silicone grease
Aluminum heatsink
Unit: mm

1m

10

PC (W)

30

1
0.5
Without heatsink
natural air cooling

20
10
0
0.005 0.01

ith

0.05 0.1

0.5

50

VCE (V)

100

fin

10

10

in

15

0.1
0.05

IE (A)

80

20

DC

Typ

IC (A)

fT (MHz)

40

1000

t (ms)

Safe Operating Area (single pulse)


(VCE = 12V)

60

0.7
1

2
0
0

ite

15

100

he

at

si

nk

10
0
50 2
50
2

Without heatsink

25

50

75

Ta (C)

100

125

150

Power Transistor 2SA1567

Test Conditions
VCB = 50V
VEB = 6V
IC = 25mA
VCE = 1V, IC = 6A
IC = 6A, IB = 0.3A
VCE = 12V, IE = 0.5A
VCB = 10V, f = 1MHz

ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
fT
COB

Ratings
100max
100max
50min
50min
0.35max
40typ
330typ

(Ta=25C)
Unit
A
A
V

External Dimensions TO220F (full-mold)

10.0

4.2
2.8

3.3

V
MHz
pF

a
b

2.6

VCC
(V)
24

RL
()
4

IC
(A)
6

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
120

1.35
1.35
0.85

IB2
t on
t stg
tf
(mA) (s)
(s)
(s)
120 0.4typ 0.4typ 0.2typ

2.54

(13.5)

Typical Switching Characteristics (common emitter)

0.45

2.54
2.2

a) Part No.
b) Lot No.
(Unit: mm)

B C E

IC VCE Characteristics (typ.)

10

0
2

10

100

VCE (V)

0.2

0.4

j-a t

(VC E = 1V )

500

ure
)
se t
emp
era
C (C
ture
ase
)
te m
p e ra
tu re
)

C (C
a

0.6

0.8

1.0

1.2

VBE (V)

hFE IC Temperature Characteristics (typ.)


(VC E = 1V)

Characteristics

125C

Typ

25C

100

j-a

100

(C/W)

hFE

30C

hFE

0
0

1000 3000

IB (mA)

hFE IC Characteristics (typ.)


500

25

12

0
4

1A

5mA
3

(Ca

3A

10mA

9A

30

IC = 12A

0.5
6A

rat

20mA

pe

6
tem

40mA

se

1.0

IC (A)

60mA

( VC E = 4 V)

12

100mA

IC VBE Temperature Characteristics (typ.)

5C

0mA

15

VCE (sat) (V)

IC (A)

10

VCE (sat)IB Characteristics (typ.)


1.5

I
20B =
0m
A

12

C0.5

16.9

Symbol

Electrical Characteristics

Unit
V
V
V
A
A
W
C
C

8.4

Ratings
50
50
6
12
3
35 (Tc = 25C)
150
55 to +150

3.9

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

0.8

Absolute Maximum Ratings (Ta = 25C)

0.5

50

50

30
0.02

30
0.02

0.1

10

0.1

IC (A)

0.3

Safe Operating Area (single pulse)


(VCE = 12V)

1000

35

10

natural air cooling


Silicone grease
Aluminum heatsink
Unit: mm

30

0m

DC

10

Typ

100

PC Ta Derating

30

10

ite

100

150

1
50
0 2
2

nk

20

10

si

Without heatsink
natural air cooling

at

0.5

he

PC (W)

20

fin

in

30

ith

IC (A)

fT (MHz)

10

t (ms)

1m
40

IC (A)

f T IE Characteristics (typ.)
50

10

10

50 50 2
0.1
0
0.05 0.1

IE (A)

12

0.05
3

10

50

VCE (V)

100

2
0
0

Without heatsink

25

50

75

100

125

150

Ta (C)

81

Power Transistor 2SA1568

ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
VFEC
fT
COB

Ratings
100max
60max
60min
50min
0.35max
2.5max
40typ
330typ

(Ta=25C)
Unit
A
mA
V

External Dimensions TO220F (full-mold)


10.0

V
V
MHz
pF

a
b

RL
()
4

IC
(A)
6

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
120

IB2
t on
t stg
tf
(mA) (s)
(s)
(s)
120 0.4typ 0.4typ 0.2typ

2.54

0.45

2.54
2.2

a) Part No.
b) Lot No.

B C E

IC VCE Characteristics (typ.)


I
20 B =
0m
A

12
10

VCE (sat) IB Characteristics (typ.)

( VC E = 1 V)

12

150

100mA

10
1.0

0
7 10

100

VCE (V)

hFE IC Characteristics (typ.)


300

0.2

0.4

125C

)
tu re
p e ra
s e te
m
C (C
a

25

30

1.0

1.2

j-a t

Characteristics

30C

(C/W)

j-a

hFE
10

10

0.8

25C

100

hFE

(VC E = 1V )

300

Typ

0.6

VBE (V)

hFE IC Temperature Characteristics (typ.)

100

re)

ure

1000 3000

IB (mA)

(VC E = 1V)

atu

rat

12

per

pe

10mA

tem

1A

C (C
ase

0.5

20mA

3A

tem

9A
6A

se

40mA

(Ca

8
IC = 12A

5C

60mA

IC (A)

VCE (sat) (V)

IC (A)

(Unit : mm)

IC VBE Temperature Characteristics (typ.)

1.4

mA

C0.5

2.6

1.35
1.35
0.85

Typical Switching Characteristics (common emitter)


VCC
(V)
24

4.2
2.8

3.3

16.9

Test Conditions
VCB = 60V
VEB = 6V
IC = 25mA
VCE = 1V, IC = 6A
IC = 6A, IB = 0.3A
IECO = 10A
VCE = 12V, IE = 0.5A
VCB = 10V, f = 1MHz

(13.5)

Symbol

Electrical Characteristics

Unit
V
V
V
A
A
W
C
C

8.4

Ratings
60
60
6
12
3
35 (Tc=25C)
150
55 to +150

0.8

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

3.9

Absolute Maximum Ratings (Ta=25C)

0.5
2
0.02

0.1

IC (A)

2
0.02

10
12

f T IE Characteristics (typ.)

10
12

IC (A)

Safe Operating Area (single pulse)


(VCE = 12V)

50

0.1

0.3

10

10
DC

0m

natural air cooling


Silicone grease
Aluminum heatsink
Unit: mm

30

m
10

ite

10
50 50 2

0.1
0
0.05 0.1

IE (A)

10

0.05
3

10

50

VCE (V)

100

2
0

15

nk

20

si

150

at

Without heatsink
natural air cooling

he

PC (W)

20

fin

in

30

ith

IC (A)

fT (MHz)

1000

35

0.5

82

100

PC Ta Derating

30

Typ

10

t (ms)

1m
40

100

10

02

Without heatsink

25

50

75

Ta (C)

100

125

150

Power Transistor 2SA1908

External Dimensions FM100 (T03PF)


0.8 0.2

15.6 0.2

V
MHz
pF

3.30.2

a
b

* Rank: O (50 to 100), P (70 to 140), Y(90 to 180)


Typical Switching Characteristics (common emitter)
VCC
(V)
40

RL
()
10

IC
(A)
4

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
400

5.50.2
3.450.2

3.0

ICBO
IEBO
V(BR) CEO
hFE *
VCE (sat)
fT
COB

(Ta=25C)
Unit
A
A
V

Ratings
10max
10max
120min
50min
0.5max
20typ
300typ

5.5

Test Conditions
VCB = 120V
VEB = 6V
IC = 50mA
VCE = 4V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 12V, IE = 0.5A
VCB = 10V, f = 1MHz

3.3

Symbol

1.6

Electrical Characteristics

Unit
V
V
V
A
A
W
C
C

9.50.2

Ratings
120
120
6
8
3
75 (Tc=25C)
150
55 to +150

1.75

16.2

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

23.0 0.3

Absolute Maximum Ratings (Ta=25C)

0.8

2.15
1.05
5.450.1

IB2
t on
t stg
tf
(mA) (s)
(s)
(s)
400 0.14typ 1.40typ 0.21typ

+0.2
0.1

5.450.1

1.5

4.4

1.5

+0.2

0.65

3.35 0.1

a) Part No.
b) Lot No.
(Unit : mm)

VCE (sat) IB Characteristics (typ.)

IC VCE Characteristics (typ.)


A

100m

75mA

0.2

0.4

1.0

(VC E = 4V)

200

tu re

atu

p e ra
e te
m
C (C
as

1.0

1.5

VBE (V)

hFE IC Temperature Characteristics (typ.)

hFE IC Characteristics (typ.)

30

0.5

IB (mA)

VCE (V)

re)

re)
atu
per
125

4A
2A
0.6
0.8

j-a t

(VC E = 4V )

300

Characteristics

125C

Typ

25C

hFE

hFE

100
100

50

30C

(C/W )

j -a

IC = 8A

IB=10mA

per

tem
se

se t
em

25mA

IC (A)

50mA

VCE (sat) (V)

IC (A)

(Ca

C (C
a

50

( VC E = 4 V)

m
50

0m

IC VBE Temperature Characteristics (typ.)

25

0.5

50

30
0.02

0.1

0.5 1

30
0.02

5 8

0.2
0.1

IC (A)

0.5

10

100

IC (A)

(VCE = 12V)

30

PC Ta Derating
80

20
10

10

Typ

1000 2000

t (ms)

Safe Operating Area (single pulse)

f T IE Characteristics (typ.)

DC

10

60

0m

W
it

20

te

40

he
at
si
nk

PC (W)

ni

IC (A)

fi

in

fT (MHz)

10

0.5
20

Wit h ou t h e a t sin k
n a t u ra l a ir c oolin g

0
0.02

5 8

0.05 0.1

0.5

IE (A)

5 8

0.1
5

10

50

VCE (V)

100 150

3.5
0

Wit h ou t h e a t sin k

25

50

75

100

125

150

Ta (C)

83

Power Transistor 2SB1622

min

max
100
100

Unit

A
VCB = 200V
VEB = 5V
A
IC = 30mA
200
V
VCE = 4V, IC = 10A
5000
30000
IC = 10A, IB = 10mA
2.5
V
IC = 10A, IB = 10mA
3.0
V
VCE = 12V, IE = 2A
60
MHz
VCB = 10V, f = 1MHz
pF
270
Rank:
O(5000
to
12000),
P(6500
to
20000),
Y(15000
to
30000)
*

ICBO
IEBO
VCEO
hFE*
VCE(sat)
VBE(sat)
fT
COB

3.3 0.2

a
b

1.75 0.15
2.150.15

IC VCE Characteristics (typ.)

+0.2

IB1
(mA)
10

VCE (sat) ( V )

IB = 0.3mA

a) Part No.
b) Lot No.
B

(Unit : mm)

VCE (sat) IB Temperature Characteristics (typ.)


125C
75C
25C
30C

IC = 15A
IC = 10A
IC = 5A

0
0.2

10

VCE ( V )

0
0.1

100 200

10

100 200

IB (mA)

IC VBE Temperature Characteristics (typ.)


(VCE = 4V)

15

IC = 5A

IB (mA)

VCE (sat) IB Temperature Characteristics (typ.)

3.350.2

+0.2

0.65 0.1

15.60.2
1.5 4.4 1.5

IB2
t on
t stg
tf
(mA) (s)
(s)
(s)
10 0.4typ 3.6typ 1.0typ

VCE (sat) ( V )

IC (A)

0.5mA

VBB2
(V)
5

VCE (sat) IB Characteristics (typ.)

0.8mA

10

VBB1
(V)
10

1.5mA
1.0mA

.0

50mA
15mA
5.0mA

IC
(A)
10

m
A

15

RL
()
4

0.8

1.05 0.1
5.450.1

5.45 0.1

Typical Switching Characteristics


VCC
(V)
40

5.5 0.2
3.45 0.2

3.0

Test Conditions

External Dimensions

23.0 0.3

Symbol

(Ta=25C)
Ratings
typ

16.2

Electrical Characteristics

Unit
V
V
V
A
A
W
C
C

0.8
5.5 0.2

Ratings
200
200
5
15
1
85 (Tc=25C)
150
55 to +150

9.5 0.2

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

1.6
3.3

Absolute Maximum Ratings (Ta=25C)

hFE IC Characteristics (typ.)


100000

IC = 10A

VCE = 4V

50000

125C
75C
25C
30C

100 200

10

hFE

ton tstg tf (sec)

50C
25C
0C
30C
55C

10

20

tstg
1

tf

0.5

Characteristics

1.0
0.5

0.1
0.5

10

20

10

80

10

0m

60

at
nk

si

5 10

40
30

Without heatsink
natural air cooling

0.1
0.05
3

he

0.5

50

ite

fin

D.

in

IC (A)

70

C.

20

90

ith
W

40

1000 2000

PC Ta Derating

10

Ta = 25C
(single pulse)

m
10

60

100

t (sec)

Safe Operating Area

fT (MHz)

j-a t

ton
0.1
0.2

50
30

IE (A)

20

Ta = 25C
VCC = 40V
IB1 = IB2 = 10mA

80

0.5 1

10

3.0

IC (A)

f T IE Characteristics (typ.)

0.1

10

IC (A)

84
70

ton tstg t f IC Characteristics (typ.)

VCE = 4V

5000

0
0.02

VBE (V)

10000

0.5

0.5

IC (A)

(C/W)

150C
125C
100C
75C

1000
0.2

1000
0.2

hFE IC Temperature Characteristics (typ.)


50000

5000

50C
25C
0C
30C
55C

IB (mA)

100000

10000

j-a

0
0.2

Ta=150C
125C
100C
75C

PC (W)

hFE

10

IC (A)

VCE (sat) ( V )

typ
2

20
10

Without heatsink

0
10

100

VCE ( V )

500

25

50

75

Ta (C)

100 125 150

Power Transistor 2SC3852

(Ta=25C)
Unit
A
A
V

Ratings
10max
100max
60min
500min
0.5max
15typ
50typ

External Dimensions TO220F (full-mold)


10.0

4.2
2.8

3.3

C0.5

16.9

V
MHz
pF

a
b

2.6

1.35
1.35
0.85

Typical Switching Characteristics (common emitter)


VCC
(V)
20

RL
()
20

IC
(A)
1.0

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
15

IB2
t on
t stg
tf
(mA) (s)
(s)
(s)
30 0.8typ 3.0typ 1.2typ

2.54

(13.5)

3.9

ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
fT
COB

Test Conditions
VCB = 80V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 0.5A
IC = 2A, IB = 50mA
VCE = 12V, IE = 0.2A
VCB = 10V, f = 1MHz

8.4

Symbol

Electrical Characteristics

Unit
V
V
V
A
A
W
C
C

Ratings
80
60
6
3
1
25 (Tc=25C)
150
55 to +150

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

0.8

Absolute Maximum Ratings (Ta=25C)

0.45

2.54
2.2

a) Part No.
b) Lot No.

B C E

(Unit : mm)

IC VCE Characteristics (typ.)

VCE (sat) IB Characteristics (typ.)

3
mA

=1

1.0

( VC E = 4 V)

8mA

IB

IC VBE Temperature Characteristics (typ.)

1.5

0
0.001

0.005 0.01

VCE (V)

0.05 0.1

re )

(C a s

e te
mp

e ra tu

ure

s e te
m
25C

3 0 C

0.5

1.0 1.1

VBE (V)

hFE IC Temperature Characteristics (typ.)


(VCE=4V)

2000

tu re

rat

0.5 1

IB (A)

hFE IC Characteristics (typ.)

(C a

C
125

2A
IC =1A

p e ra

pe

1
3A

0.5mA
0

tem

0.5

1mA

se

(Ca

2mA

IC (A)

VCE (sat) (V)

IC (A)

3mA

5mA
2

j-a t

(VC E = 4V )

2000

Characteristics

125C
1000

25C

500

30C

j-a

500

(C/W)

Typ

hFE

hFE

1000

100
0.01

0.1

0.5

100
0.01

0.1

IC (A)

10

100

PC Ta Derating
30

10

in
ts

a
he

0.5

ite
fin
in

PC (W)

ith

IC (A)

20

DC

10
10 ms
0m
s

1m

20

Typ

VCB = 10V
IE = 2A
1000

t (ms)

Safe Operating Area (single pulse)


(VCE = 12V)

fT (MHz)

0.5

IC (A)

f T IE Characteristics (typ.)
30

0.5

10

10
Without heatsink
natural air cooling

0.1
0
0.005 0.01

0.05 0.1

IE (A)

0.5 1

0.05
3

Without heatsink

10

50

VCE (V)

100

50

100

150

Ta (C)

85

Power Transistor 2SC4024

Electrical Characteristics
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
fT
COB

(Ta=25C)
Unit
A
A
V

Ratings
10max
10max
50min
300 to 1600
0.5max
24typ
150typ

External Dimensions TO220F (full-mold)


10.0

4.2
2.8

3.3

C0.5

V
MHz
pF

16.9

Test Conditions
VCB = 100V
VEB = 15V
IC = 25mA
VCE = 4V, IC = 1A
IC = 5A, IB = 0.1A
VCB = 12V, IE = 0.5A
VCB = 10V, f = 1MHz

Symbol

Unit
V
V
V
A
A
W
C
C

8.4
a
b

2.6

1.35
1.35
0.85

Typical Switching Characteristics (common emitter)


VCC
(V)
20

RL
()
4

IC
(A)
5

IB1
(A)
0.1

IB2
(A)
0.1

t on
(s)
0.5typ

t stg
(s)
2.0typ

tf
(s)
0.5typ

2.54

(13.5)

Ratings
100
50
15
10
3
35 (Tc=25C)
150
55 to +150

3.9

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

0.8

Absolute Maximum Ratings (Ta=25C)

0.45

2.54
2.2

a) Part No.
b) Lot No.

B C E

(Unit: mm)

IC VCE Characteristics (typ.)

VCE (sat) IB Characteristics (typ.)

10

IC VBE Temperature Characteristics (typ.)

IB = 35mA
30mA

( VC E = 4 V)

10

1.5

0
0.002

0.1

)
ure

re)

rat

tu re

atu

p e ra
s e te
m

tem
se

C (C
a

0.5

1.0

1.2

VBE (V)

hFE IC Temperature Characteristics (typ.)


(VC E = 4V)

per

pe

0
0

IB (A)

hFE IC Characteristics (typ.)

C (
Ca

30

0.01

VCE (V)

1000

5A

3A

IC = 1A

25

5mA

e t
em

10A

0
0

as

4
0.5

(C

10mA

5C

15mA

1.0

12

20mA

IC (A)

VCE (sat) (V)

IC (A)

25mA

j-a t

(VC E = 4V )

1000

Characteristics

25C

hFE

30

j-a

hFE

500

(C/W)

125C

Typ

500

0.5
100
0.02

0.1

0.5

10

100
0.02

0.1

0.5

IC (A)

10

0.3
1

10

IC (A)

f T IE Characteristics (typ.)

100

PC Ta Derating
40

30
1m

10

ite
he

150

10

50

10

VCE (V)

100

2
0

15
0 2
1
50 50 2 00 10
0 2

nk

10

Without heatsink
natural air cooling

si

at

0.5

0.2
3

fin

PC (W)

20

in

IC (A)

ith

DC

fT (MHz)

30

IE (A)

86

0.5
0
0.05 0.1

10

0m

10

natural air cooling


Silicone grease
Aluminum heatsink
Unit: mm

10

Typ
20

1000

t (ms)

Safe Operating Area (single pulse)


(VCE = 12V)

30

Without heatsink

25

50

75

Ta (C)

100

125

150

Power Transistor 2SC4065

ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
VFEC
fT
COB

(Ta=25C)
Unit
A
mA
V

Ratings
100max
60max
60min
50min
0.35max
2.5max
24typ
180typ

External Dimensions TO220F (full-mold)


10.0

V
V
MHz
pF

a
b

RL
()
4

IC
(A)
6

VBB1
(V)
10

VBB2
(V)
5

IB1
(A)
0.12

C0.5

2.6

1.35
1.35
0.85

Typical Switching Characteristics (common emitter)


VCC
(V)
24

4.2
2.8

3.3

16.9

Test Conditions
VCB = 60V
VEB = 6V
IC = 25mA
VCE = 1V, IC = 6A
IC = 6A, IB = 1.3A
VECO = 10A
VCE = 12V, IE = 0.5A
VCB = 10V, f = 1MHz

2.54

IB2
t on
t stg
tf
(A)
(s)
(s)
(s)
0.12 0.6typ 1.4typ 0.4typ

(13.5)

Symbol

Electrical Characteristics

(Ta=25C)
Unit
V
V
V
A
A
W
C
C

8.4

Ratings
60
60
6
12
3
35 (Tc=25C)
150
55 to +150

0.8

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

3.9

Absolute Maximum Ratings

0.45

2.54
2.2

a) Part No.
b) Lot No.

B C E

(Unit: mm)

IC VCE Characteristics (typ.)


mA

0
15

( VC E = 1 V)

12

100mA

10
1.0

0.1

VCE (V)

50

C
25 C
0
3

10

10
5
3
0.02

10 12

0.1

IC (A)

10 12

0.2
1

10

tu re
p e ra

40
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm

10

DC

30

20

ite
he
at
si

0.5
10

Without heatsink
natural air cooling

0.1
5 10 12

0.05
3

10

50

VCE (V)

100

2
0

nk

10

fin

in

PC (W)

ith

IC (A)

0m

fT (MHz)

20

10

10

Typ

1000

PC Ta Derating

30
1m

e te
m

100

t (ms)

Safe Operating Area (single pulse)


(VCE = 12V)

IE (A)

(C a s

0.5

IC (A)

f T IE Characteristics (typ.)

0.5

3 0 C

j-a

hFE

50

0
0.05 0.1

rat

Characteristics

100

30

1.0 1.1

0.5

125
100

5C

j-a t

(VCE = 1V)

400

Typ

0.1

VBE (V)

hFE IC Temperature Characteristics (typ.)


(VCE = 1V)

400

5
3
0.02

12

IB (A)

hFE IC Characteristics (typ.)

hFE

re)

ure

0
0.005 0.01

6A

3A

IC = 1A

9A

(C/W)

atu

pe

4
12A

IB = 10mA

per

tem

20mA

0.5

tem

C (C
ase

40mA

25

VCE (sat) (V)

se

60mA

IC (A)

IC VBE Temperature Characteristics (typ.)

1.3

(Ca

10

VCE (sat) IB Characteristics (typ.)

IC (A)

20

0m

12

150
15
0
2
1
50 50 2 00 10
02
Without heatsink

25

50

75

100

125

150

Ta (C)

87

Power Transistor 2SC4153

External Dimensions TO220F (full-mold)


10.0

V
V
MHz
pF

a
b

RL
()
16.7

IC
(A)
3

VBB1
(V)
10

VBB2
(V)
5

IB1
(A)
0.3

C0.5

2.6

1.35
1.35
0.85

Typical Switching Characteristics (common emitter)


VCC
(V)
50

4.2
2.8

3.3

16.9

ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
COB

(Ta=25C)
Unit
A
A
V

Ratings
100max
100max
120min
70 to 220
0.5max
1.2max
30typ
110typ

(13.5)

Test Conditions
VCB = 200V
VEB = 8V
IC = 50mA
VCE = 4V, IC = 3A
IC = 3A, IB = 0.3A
IC = 3A, IB = 0.3A
VCE = 12V, IE = 0.5A
VCB = 10V, f = 1MHz

8.4

Symbol

Unit
V
V
V
A
A
W
C
C

0.8

Ratings
200
120
8
7 (pulse 14)
3
30 (Tc=25C)
150
55 to +150

3.9

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

2.54

IB2
t on
t stg
tf
(A)
(s)
(s)
(s)
0.6 0.5max 3max 0.5max

0.45

2.54
2.2

a) Part No.
b) Lot No.

B C E

(Unit: mm)

IC VCE Characteristics (typ.)


7

VCE (sat) IB Characteristics (typ.)

mA

200
5

IC VBE Temperature Characteristics (typ.)

( VC E = 4 V)

0mA

15

6
A

100m

0.1

VCE (V)

re )

rat

j-a t

(VCE = 4V)

300

ra tu

atu

pe

e te m
pe
(C a s
3 0 C

0.5

1.0 1.1

VBE (V)

hFE IC Temperature Characteristics (typ.)


(VCE = 4V)

300

per

tem

0
0

IB (A)

hFE IC Characteristics (typ.)

re)

ure

0
0.005 0.01

5A

3A

IC = 1A
0

C (C
a

5C

1
0

se t
em

se

IB =10mA

25

(Ca

20mA

12

IC (A)

60mA
40mA

VCE (sat) (V)

IC (A)

Characteristics

125C

Typ
100

C
30

20
0.01

0.1

0.5

j-a

50

50

20
0.01

5 7

0.1

f T IE Characteristics (typ.)

5 7

0.5

0.2
1

10

20

20
W

0.1
0.1

IE (A)

88

0.05
5

10

50

VCE (V)

100

200

2
0

00

nk

Without heatsink
natural air cooling

si

50 50 2

15

100

at

he

15

10
10

ite

0.5

fin

in

PC (W)

ith

IC (A)

natural air cooling


Silicone grease
Aluminum heatsink
Unit: mm

s
10m

20

30

0
s

30

1000

PC Ta Derating

10

10

Typ

0
0.01

100

t (ms)

Safe Operating Area (single pulse)


(VCE = 12V)

40

0.5

IC (A)

IC (A)

fT (MHz)

(C/W)

hFE

hFE

25C

100

Without heatsink

25

50

75

Ta (C)

100

125

150

Power Transistor 2SD2141

Test Conditions
VCB = 330V
VEB = 6V
IC = 25mA
VCE = 2V, IC = 3A
IC = 4A, IB = 20mA

ICBO
IEBO
V(BR) CEO
hFE
VCE (sat )

Ratings
10max
20max
330 to 430
1500min
1.5max

(Ta=25C)
Unit
A
A
V

External Dimensions TO220F (full-mold)


10.0

4.2
2.8

3.3

C0.5

16.9

Symbol

Electrical Characteristics

Unit
V
V
V
A
A
W
C
C

V
a
b

2.6

0.8

Ratings
38050
38050
6
6 (pulse 10)
1
35 (Tc=25C)
150
55 to +150

3.9

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

8.4

Absolute Maximum Ratings (Ta=25C)

2.54

(13.5)

1.35
1.35
0.85

0.45

2.54
2.2

a) Part No.
b) Lot No.

B C E

(Unit: mm)

IC VCE Characteristics (typ.)

VCE (sat) IB Characteristics (typ.)

150mA
120mA

( VC E = 4 V)

10

A
18m
4mA

0.2 0.5

VCE (V)

10

(VCE = 2V)

10000
5000

ra tu

ure
rat

pe
tem

2.0

2.4

VBE (V)

hFE IC Temperature Characteristics (typ.)

j-a t

(VCE = 2V)

10000
5000

Typ

3 0 C

C (
Ca
25

1.0

IB (mA)

hFE IC Characteristics (typ.)

re )

e)

0
0

50 100 200

e te m
pe

se

(C
C
5

(C a s

1A

12

ur
mp

at

IC = 7A
5A

3A

as

IB = 1mA

er

VCE (sat) (V)

te

A
90m 0mA
6

20m

2mA

IC (A)

IC VBE Temperature Characteristics (typ.)

IC (A)

10

Characteristics

25

(C/W)

1000
500

5
5

j-a

hFE

hFE

5C

12

1000
500
100
50

0.5

100
50

10
0.02

0.1

0.5

20
0.02

10

0.1

0.5 1.0

IC (A)

10

0.1

10

100

IC (A)

f T IE Characteristics (typ.)

PC Ta Derating
40

20

natural air cooling


Silicone grease
Aluminum heatsink
Unit: mm

10
DC

30

ite
he

PC (W)

20

fin

IC (A)

in

0.5

ith

1
20

W
at

fT (MHz)

1ms

30

s
10m s
0m
10

Typ

1000

t (ms)

Safe Operating Area (single pulse)


(VCE = 12V)

40

si

0
0.01

Without heatsink
natural air cooling

0.05 0.1

0.5 1

IE (A)

0.01
1

150

10

0.05

nk

0.1
10

50 50 2 100

10

50 100

VCE (V)

500

2
0

Without heatsink

25

50

150

100

75

100

125

150

Ta (C)

89

Power Transistor 2SD2382

ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b

(Ta=25C)
Unit
A
A
V

Ratings
10max
10max
60 to 70
700 to 3000
0.15max
1.5max
200min

External Dimensions TO220F (full-mold)


10.0

4.2
2.8

3.3

C0.5

V
V
mJ

16.9

Test Conditions
VCB = 60V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
IFEC = 6A
L = 10mH, single pulse

8.4

Symbol

Unit
V
V
V
A
A
W
C
C

a
b

2.6

0.8
1.35
1.35
0.85

Typical Switching Characteristics


VCC
(V)
12

RL
()
12

IC
(A)
1

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
30

IB2
(mA)
30

t on
(s)
0.25

t stg
(s)
0.8

tf
(s)
0.35

2.54

(13.5)

Ratings
655
655
6
6 (pulse 10)
1
30 (Tc=25C)
150
55 to +150

3.9

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

0.45

2.54
2.2

a) Part No.
b) Lot No.

B C E

(Unit: mm)

IC VCE Characteristics (typ.)


10

VCE (sat) IB Temperature Characteristics (typ.)


20mA

IC VBE Temperature Characteristics (typ.)

(IC = 1.5A)

0.75

30mA
5

5mA
4

3mA

0.5

IC (A)

VCE (sat) (V)

IC (A)

10mA
6

Ta = 55C
25C
75C
125C

0.25

IB = 1mA

Ta=55C
25C
75C
125C

1
0

10

VCE (V)

50 100

400

0.5

1.0

IB (mA)

hFE IC Characteristics (typ.)

(VCE = 1V)

5000

1.5

VBE (V)

hFE IC Temperature Characteristics (typ.)

j-a t

(VCE = 1V)

5000

Characteristics

1000
500

Ta = 55C
25C
75C
125C

100

100

0.05 0.1

0.5

10

50
30
0.01

0.05 0.1

0.5

IC (A)

10

0.3

10

50 100

PC Ta Derating

20

30
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm

c
mse
0.5
ec
1ms c
e

10

10
0m

10

D.

at
si
nk

IC (A)

Without heatsink
natural air cooling

he

10

0.5

ite

15
0
100 150

1
00 2
2
50 5
02

fin

in

20
ith

25

se

(T

10

ms

5
Typ

15

500 1000

t (ms)

Safe Operating Area (single pulse)


(VCE = 1V)

25
20

IC (A)

f T IE Characteristics (typ.)
30

0.5

PC (W)

50
30
0.01

j-a

hFE

hFE

500

fT (MHz)

(C/W)

Typ
1000

Without heatsink

0
0.01

0.1
0.05 0.1

0.5 1

IE (A)

90

5 10

10

VCE (V)

50

100

50

100

Ta (C)

150

Power Transistor 2SD2633

Tj
Tstg

ICBO
IEBO
VCEO
hFE
VCE (sat)
VBE (sat)

Test Conditions
VCB=200V
VEB=6V
IC=50mA
VCE=2V, IC=6A
IC=6A, IB=6mA
IC=6A, IB=6mA

Ratings
100max
10max
150min
2000min
1.5max
2.0max

(Ta=25C)
Unit
A
mA
V

External Dimensions TO220F (full-mold)


10.0

4.2
2.8

3.3

C0.5

V
V

16.9

Symbol

Electrical Characteristics

8.4

Unit
V
V
V
A
A

a
b

2.6

C
C

1.35
1.35
0.85
2.54

2.54

(13.5)

PC

Ratings
200
150
6
8
1
35 (Tc=25C)
2 (Ta=25C, No Fin)
150
55 to +150

0.8

Symbol
VCBO
VCEO
VEBO
IC
IB

3.9

Absolute Maximum Ratings (Ta=25C)

0.45

2.2

B C E

a) Part No.
b) Lot No.
(Unit: mm)

91

Power Transistor FP812

ICBO
IEBO
VCEO
hFE
VCE (sat)

(Ta=25C)
Unit
A
A
V

Ratings
10max
10max
120min
70min
0.3max

External Dimensions TO220F (full-mold)


10.0

a
b

Typical Switching Characteristics


VCC
(V)
12

RL
()
4

IC
(A)
3

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
30

4.2
2.8

3.3

C0.5

16.9

Test Conditions
VCB = 120V
VEB = 6V
IC = 50mA
VCE = 4V, IC = 3A
IC = 3A, IB = 0.3A

2.6

IB2
(mA)
30

t on
(s)
2.5

t stg
(s)
0.4

tf
(s)
0.6

1.35
1.35
0.85
2.54

(13.5)

Symbol

Electrical Characteristics

Unit
V
V
V
A
A
W
C
C

8.4

Ratings
120
120
6
8 (pulse 12)
3
35 (Tc=25C)
150
55 to +150

3.9

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

0.8

Absolute Maximum Ratings (Ta=25C)

0.45

2.54
2.2

a) Part No.
b) Lot No.

B C E

(Unit: mm)

IC VCE Characteristics (typ.)


8

00

mA

0m

VCE (sat) I B Characteristics (typ.)


100mA

0m

5
1

IC VBE Temperature Characteristics (typ.)

75mA

VCE (sat) (A)

IC (A)

4
25mA
2

Ic = 1A

IB = 10mA

IC (A)

Ic = 5A

50mA

(VBE = 4V)

8
Ic = 3A

0
5

10

4
Tc = 40C
25C
75C
125C

50 100

VCE (V)

500 1000 2000

0.5

IB (mA)

hFE IC Characteristics (typ.)

hFE IC Temperature Characteristics (typ.)


(VCE = 4V)

500

1.0

1.5

VBE (V)

j-a t

(VCE = 4V)

500

Characteristics

50
)

100

75C
25C
100

j-a

hFE

hFE

Typ

(C/W)

Tc = 125C

55C
50

30
0.01

30
0.01

0.5 1

5 8

NO

0.05 0.1

0.5

IC (A)

5 8

12
10

0.1
0.05
0.0002 0.001

0.01

0.1

se
c

(T

20

natural air cooling


Without heatsink

nk

100

si

10

20

at

0.5

he

20

ite

PC (W)

fin

C)

in

ith

=2

30
W

IC (A)

100

natural air cooling


Silicone grease
Aluminum heatsink
Unit: mm

c
se
c
m
se
0m
10

fT (MHz)

10

PC Ta Derating

1m

10

D.

20

10

40

Typ

Tc = 25C

t (sec)

Safe Operating Area (single pulse)


(VCE = 12V)

30

25

1
0.5

IC (A)

f T IE Characteristics (typ.)

Fin

=
(Ta

Single Pulese

50
0.05 0.1

10
5

10

02

Without heatsink

0
0.01

0.05 0.1

0.5

IE (A)

92

10

0.1
3

10

50

VCE (V)

100 150

50

100

Ta (C)

150

Power Transistor MN611S

C
C

VCB=105V
VEB=6V
IC=50mA
VCE=1V, IC=1A
IC=1.2A, IB=12mA
I FEC=6A
L=10mA

max

115
800
0.08
1.25

10
10
125
1500
0.12
1.5

105
400

Unit
A
A
V
V
V
mJ

45

4.440.2

10.20.3
(1.4)

ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
ES/B

min

+0.3

Test Conditions

1.30.2

1.6

b
+0.2

(1.5)

Tj
Tstg

Symbol

External Dimensions TO220S

(Ta=25C)
Ratings
typ

Typical Switching Characteristics


VCC
(V)
12

RL
()
12

VBB1
(V)
10

VBB2
(V)
5

IC
(A)
1

+0.2

0.86 0.1

0.40.1

1.20.2

tf
IB2
ton
tstg
(mA) (s) (s) (s)
30 0.2typ 5.7typ 0.4typ

IB1
(mA)
30

0.1 0.1

1.270.2

+0.3

PC

Electrical Characteristics

Unit
V
V
V
A
A

10.0 0.5

Ratings
11510
11510
6
6 (pulse 10)
1
50 (Tc=25C)
1.2 (Ta=25C, No Fin)
150
55 to +150

3.0 0.5

Symbol
VCBO
VCEO
VEBO
IC
IB

8.60.3

Absolute Maximum Ratings (Ta=25C)

2.540.5

2.540.5

a) Part No.
b) Lot No.

IC VCE Characteristics (typ.)


(Ta = 25C)

(Unit: mm)

VCE (sat) IB Characteristics (typ.)


(Ta = 25C)

0.75

30mA

20mA

VCE (sat) (V)

IC (A)

IC = 2A

10mA

5mA

4
3

3mA

0.5

IC = 1.2A

0.25

2
IB = 1mA

IC = 0.5A

0
0

10

VCE (V)

100

1000

IB (mA)

VCE (sat) IB Temperature Characteristics (typ.) IC VBE Temperature Characteristics (typ.)


(IC = 1.2A)

0.75

IFEC VFEC Temperature Characteristics (typ.)

(VCE = 1V)

7
6

Ta = 150C
125C
75C
25C
55C

0.5
Ta = 150C
125C
75C
25C
55C

0.25

4
3

100

1
0
0

0.5

IB (mA)

typ

10

Ta = 150C
125C
75C
25C
55C

30
0.01

0.1

Ic (A)
j-c j-a t

Characteristics (Single pulse)

tstg
Ta = 25C
VCC = 12V
IB1 = IB2 = 30mA

tf
ton

0.1

10

j-a
FR4 (70 100 1.6mm) Use substrate

PT Ta Derating

(Ta = 25C)

20

Ic (A)

Safe Operating Area (Single pulse)

(Tc = 25C)

1.5

10

Ic (A)

50

1.0

ton tstg t f IC Characteristics (typ.)

(VCE = 1V)

5000

hFE

hFE

0.1

0.5

VFEC (V)

hFE IC Temperature Characteristics (typ.)

100

30
0.01

60

10

50

j-c
1

PC (W)

40

IC (A)

(C/W)

1000

100

j-c j-a

1.5

ton tstg tf (sec)

(Ta = 25C)
(VCE = 1V)

5000

1000

1.0

VBE (V)

hFE IC Characteristics (typ.)

10

1000

Ta = 150C
125C
75C
25C
55C

0
10

IFEC (A)

IC (A)

VCE (sat) (V)

PT =50s
PT =500s
PT =1ms
PT =10ms

30
20

0.1
0.001

Without heatsink

0.01

0.1

t (s)

10

10

0.1
1

10

VCE (V)

100 200

25

50

75

100

Ta (C)

125

150

93

Power Transistor MN638S

Test Conditions
VCB=330V
VEB=6V
IC=25mA
VCE=2V, IC=3A
IC=4A, IB=20mA

External Dimensions TO220S

4.440.2

10.20.3

1.30.2

a
+0.3

ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)

(Ta=25C)
Unit
A
mA
V

Ratings
10max
20max
330 to 430
1500min
1.5max

1.6

b
+0.2

(1.5)

Symbol

(1.4)

Electrical Characteristics

Unit
V
V
V
A
A
W
C
C

10.0 0.5

Ratings
38050
38050
6
6 (pulse 10)
1
60 (Tc=25C)
150
55 to +150

0.10.1

1.270.2

3.0 0.5

+0.3

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

8.60.3

Absolute Maximum Ratings (Ta=25C)

+0.2

0.40.1

0.86 0.1
1.20.2
2.540.5

2.540.5

a) Part No.
b) Lot No.
(Unit: mm)

150mA
120mA

A
18m
4mA

0.2 0.5

VCE (V)

10

(VCE = 2V)

10000
5000

Typ

hFE

hFE

5C

12

1000
500
100
50

0.5

IC (A)

94

1000
500

25

C
5C

100
50
0.1

10

20
0.02

0.1

0.5 1.0

IC (A)

ra tu

re )

e)

ur
at

25

(C a s

1.0

2.0

2.4

VBE (V)

hFE IC Temperature Characteristics (typ.)


(VCE = 2V)

10000
5000

10
0.02

0
0

50 100 200

IB (mA)

hFE IC Characteristics (typ.)

ure

er

se

(C
C

C (
Ca

5
12

10

j-c

j-a t

Characteristics

100
j-c j-a (C/W)

rat

mp

pe

1A

e te m
pe

te

5A

3 0 C

IC = 7A
3A

as

IB=1mA

tem

A
90m 0mA
6

IC (A)

20m

2mA

IC (A)

(VBE =4V)

10

VCE (sat) (V)

10

IC VBE Temperature Characteristics (typ.)

VCE (sat) I B Characteristics (typ.)

IC VCE Characteristics (typ.)

j-a

10

j-c

0.1
0.001

0.01

0.1

t (s)

10

Surface-mount Power Transistor SSD103

Test Conditions

ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b

VCB = 60V, I E = 0A
VEB = 6V, IC = 0A
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
I FEC = 6A
L = 10mH

min

60
400

65
800
0.11
1.25

max
10
10
70
1500
0.15
1.5

80

External Dimensions SOP8

Unit
0.70.2

A
A
V

5.4Max
8

0 to 10
5

a
b

V
V
mJ

6.20.3

A
A
W
C
C

Symbol

(Ta=25C)
Ratings
typ

0 to 0.1

4
+0.15

1.270.25

0.42 0.05

+0.15

0.17 0.05

(drain heatsink copper foil area 2525mm)


5.00.2

1.50.2

*1: FR4 70mm100mm 1.6mm

0.50.2

Electrical Characteristics

Unit
V
V
V

4.40.2

Symbol
Ratings
VCBO
655
655
VCEO
VEBO
6
IC
6
IC (pulse) 10 (Pw 1mS, Duty 25%)
10
IB
1.5 *1
PC
Tj
150
Tstg
55 to +150

4.7Max

Absolute Maximum Ratings (Ta=25C)

a) Part No.
b) Corporate mark
c) Lot No.
d) Control No.
(Unit: mm)

VCE (sat) I C Temperature Characteristics (typ.)

IC VCE Characteristics (typ.)


7

30mA

(VCE = 1V)

6
IC/IB = 100

20mA

IC VBE Temperature Characteristics (typ.)

0.75

5
10mA

5mA

3mA

Ta = 55C
25C
75C
125C

0.25

Ta = 125C
75C
25C
55C

3
2

IB = 1mA

1
0

0.5

IC (A)

IC (A)

VCE (sat) (V)

1
0

0
0.01

0.1

VCE (V)

10

0.5

hFE IC Temperature Characteristics (typ.)

1.5

ton tstg t f IC Characteristics (typ.)

(VCE = 1V)

2000

1.0

VBE (V)

IC (A)

tstg

ton tstg tf (S)

1000

hFE

500
Ta = 125C
75C
25C
55C

100

VCC = 12V
IB1 = IB2 = 30mA

1
0.5

tf
ton

0.1

50
0.01

0.1

10

IC (A)

Safe Operating Area

IC (A)

(Single pulse)

Equivalent Circuit Diagram

20

0.5m

10

s
s
10m

IC (A)

5, 6, 7, 8

1m

1
0.5
natural air cooling
Without heatsink

2, 3, 4

0.1
1

10

50

100

VCE (V)

95

Surface-mount Power Transistor Array SDA03

External Dimensions SMD-16A

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
50

IB2
(mA)
50

t on
(s)
0.4

t stg
(s)
1.75

a
b
Pin 1

tf
(s)
0.22

20.0max
0.2

19.56

1.40.2

IC
(A)
1

+0.15
0.3 0.05

4.0max

RL
()
12

+0.15

0.75 0.05
16

Typical Switching Characteristics


VCC
(V)
12

2.540.25

0.890.15

0.25

6.8max

ICBO
IEBO
VCEO
hFE
VCE (sat)

(Ta=25C)
Unit
A
A
V

Ratings
10max
10max
60min
100min
0.4max

6.30.2
8.00.5

Test Conditions
VCB = 60V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 2A
IC = 2A, IB = 0.1A

3.60.2

Symbol

1.00.3

Electrical Characteristics

Unit
V
V
V
A
A
W
C
C

0 to 0.15

Ratings
60
60
6
6 (pulse 12)
1
3 (No Fin)
150
55 to +150

9.80.3

Symbol
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg

3.00.2

Absolute Maximum Ratings (Ta=25C)

a) Part No.
b) Lot No.
(Unit: mm)

IC VCE Characteristics
6

VCE (sat) IC Temperature Characteristics (typ.)


100mA

200mA

VCE (sat) (V)

20mA

10mA

Ta = 150C
75C
25C
55C

IC (A)

30mA

(VCE = 4V)

6
IC / IB = 20

50mA

IC (A)

IC VBE Temperature Characteristics (typ.)

Ta = 150C
75C
25C
55C

IB = 5mA

1
0

0
0.05

0.1

10

hFE IC Temperature Characteristics

hFE

500

Ta = 150C
75C
25C
55C

30
0.01

0.1

10

VCC = 12V
IB1 = IB2 = 50mA

0.5

tf

j-a t

Characteristics (Single pulse)

(Ta = 25C)

10
5

tstg

0.1
0.05
0.5 0.1

0.5

IC (A)

10

0.3
0.001

0.01

0.1

PT Ta Derating

20

t (s)

IC (A)

Safe Operating Area (Single pulse)

1.5

ton
1

j-a (C/W)

ton tstg tf (sec)

VCE = 4V

1.0

50

50

0.5

VBE (V)

ton tstg t f IC Characteristics

1000

100

IC (A)

VCE (V)

Equivalent Circuit Diagram

1m

10
10

Without heatsink

PT (W)

IC (A)

20

16

15

14

13

12

11

10

0.5
1

natural air cooling


Without heatsink

0.1
3

10

50

VCE (V)

96

100

50

100

Ta (C)

150

Surface-mount Power Transistor Array SDA04

Electrical Characteristics

External Dimensions SMD-16A

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
50

IB2
(mA)
50

t on
(s)
0.4

t stg
(s)
1.75

tf
(s)
0.22

a
b
Pin 1

20.0max
0.2

19.56

1.40.2

IC
(A)
1

+0.15
0.3 0.05

4.0max

RL
()
12

+0.15

0.75 0.05

16

Typical Switching Characteristics


VCC
(V)
12

2.540.25

0.890.15

0.25

3.60.2

ICBO
IEBO
VCEO
hFE
VCE (sat)

(Ta=25C)
Unit
A
A
V

Ratings
10max
10max
60min
100min
0.4max

6.8max

Test Conditions
VCB = 60V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 2A
IC = 2A, IB = 0.1A

6.30.2
8.00.5

Symbol

1.00.3

Unit
V
V
V
A
A
W
C
C

0 to 0.15

Ratings
60
60
6
6 (pulse 12)
1
2.5 (No Fin)
150
55 to +150

9.80.3

Symbol
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg

3.00.2

Absolute Maximum Ratings (Ta=25C)

a) Part No.
b) Lot No.
(Unit: mm)

IC VCE Characteristics
6

VCE (sat) IC Temperature Characteristics (typ.)


100mA

200mA

VCE (sat) (V)

20mA

10mA

Ta = 150C
75C
25C
55C

IC (A)

30mA

(VCE = 4V)

6
IC / IB = 20

50mA

IC (A)

IC VBE Temperature Characteristics (typ.)

Ta = 150C
75C
25C
55C

IB = 5mA

1
0

0
0.05

0.1

10

hFE IC Temperature Characteristics

hFE

500

Ta = 150C
75C
25C
55C

30
0.01

0.1

10

VCC = 12V
IB1 = IB2 = 50mA

0.5

tf

j-a t

Characteristics (Single pulse)


(Ta = 25C)

0.05
0.5 0.1

0.5

10
5

tstg

0.1

IC (A)

10

0.3
0.001

0.01

0.1

PT Ta Derating

20

t (s)

IC (A)

Safe Operating Area (Single pulse)

1.5

ton
1

j-a (C/W)

ton tstg tf (sec)

VCE = 4V

1.0

50

50

0.5

VBE (V)

ton tstg t f IC Characteristics

1000

100

IC (A)

VCE (V)

Equivalent Circuit Diagram

1m

10
10

20

Without heatsink

PT (W)

IC (A)

16

15

10

0.5
1

natural air cooling


Without heatsink

0.1
3

10

50

VCE (V)

100

50

100

150

Ta (C)

97

Surface-mount Power Transistor Array SDC09

External Dimensions SMD-16A

2.540.25

0.890.15

0.25

+0.15

0.75 0.05
16

V
V
mJ

6.8max

ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b

(Ta=25C)
Unit
A
A
V

Ratings
10max
10max
60 to 70
400 to 1500
0.15max
1.5max
80min

6.30.2
8.00.5

Test Conditions
VCB = 60V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
IFEC = 6A
L = 10mH, single pulse

9.80.3

Symbol

Unit
V
V
V
A
A
W
C
C

3.00.2

Ratings
655
655
6
6 (pulse 10 *)
1
2.8
150
55 to +150

0 to 0.15

Symbol
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg

1.00.3

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

+0.15
0.3 0.05

b
Pin 1

20.0max
0.2

19.56

3.60.2
1.40.2

4.0max

* PW 100s, Duty 1%

a) Part No.
b) Lot No.
(Unit: mm)

IC VCE Characteristics

VCE (sat) IC Temperature Characteristics (typ.)

IC VBE Temperature Characteristics (typ.)


(VCE = 4V)

0.7
IC /IB =100
0.6

20mA

0.5

IC (A)

10mA

4
5mA
3

3mA

1mA

1
0

0.3

3
2
1

0.1

0
0.0001

Ta=150C
100C
75C
25C
55C

4
Ta=150C
100C
75C
25C
55C

0.4

0.2

IC (A)

IB =
30mA

VCE (sat) (V)

0.001

0.01

0.1

0.2

0.4

IC (A)

VCE (V)

hFE IC Temperature Characteristics

ton tstg t f IC Characteristics

5000

0.6

0.8

1.0

1.2

VBE (V)

j-a t

Characteristics (Single pulse)


(Use substrate 42311m)

10

10

ton tstg tf (sec)

VCE=1V

Ta=150C
100C
75C
25C
55C

100
50
0.01

0.1

10

tstg
VCC =12V
IB1= IB2 =30mA

ton
tf

0.5

1.0

1.5

2.0

2.5

3.0

0.05
0.1

0.5
ms

Equivalent Circuit Diagram

50 50 1.6mm
Use substrate
1

PT (W)

1ms
1

100

10
5

10

t (ms)

PT Ta Derating
Ta=25C

0.5

IC (A)

Safe Operating Area (Single pulse)

IC (A)

0.1
0.1

IC (A)

20

j-a (C/W)

hFE

1000

4 13 15 16

42311.0mm
Use substrate

14

10ms

11

1
0.1
0.05
0.5

10

VCE (V)

98

50 100

0
50

50

Ta (C)

100

150

9 10 12

1000

Power Transistor Array SLA8004

PT
Tj
Tstg

Symbol

V
V
V
A
A
W
W
C
C

ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC

Test Conditions

Ratings

Test Conditions

Unit

Ratings

310.2

A
mA
V

VCB = 55V
100max
VEB = 6V
60max
IC = 25mA
55min
VCE = 1V, I C = 3A
80min
I C = 6A, IB = 0.3A 0.35max
IFEC = 10A
2.5max

VCB = 60V
100max
VEB = 6V
60max
IC = 25mA
60min
VCE = 1V, IC = 3A 150min
IC = 6A, IB = 0.3A 0.35max
IFEC = 10A
2.5max

External Dimensions SLA 12pin (LF817)

3.20.15 3.8

24.40.2

4.80.2
1.70.1

16.40.2

3.20.15

V
V

a
1.20.15

50.5

VCBO
VCEO
VEBO
IC
IB

Unit

PNP

2.450.2
(Root dimension)

4 (R1)
R-end
+0.2

+0.2

(3)

NPN
PNP
60
55
60
55
6
6
12
12
3
3
5 (Tc=25C, No Fin)
40 (Tc=25C)
150
55 to +150

(Ta=25C)

NPN

160.2

Symbol

Electrical Characteristics

12.90.2

Ratings

9.90.2

Absolute Maximum Ratings (Ta=25C)

0.85 0.1
1.450.15

0.55 0.1
40.7

11 P2.540.1= (27.94)
(Root dimension)

31.30.2

IC VCE Characteristics (typ.)

IC VCE Characteristics (typ.)


(PNP)

12

10

1 2 3 4 5 6 7 8 9 10 11 12

IC (A)

40mA

(Unit: mm)

40mA
6

10mA

20mA

20mA

IB = 10mA

2
0

hFE IC Characteristics (typ.)

(VC E = 1V) (PNP)

300

VCE (V)

VCE (V)

hFE IC Characteristics (typ.)

(VCE = 1V) (N PN )

400

Typ

Typ

100

hFE

hFE

100

10

50

10

2
0.02

0.1

5
3
0.02

10
12

IC (A)

hFE IC Temperature Characteristics (typ.)


125C

0.1

10 12

hFE IC Temperature Characteristics (typ.)


(VCE = 1V) (N PN )

400

C
125

25C
30C

100

IC (A)

(VC E = 1V) (PNP)

300

C
25 C
0
3

hFE

hFE

100

10

50

10

2
0.02

0.1

5
3
0.02

10
12

IC (A)

VCE (sat) IB Characteristics (typ.)

0.1

10 12

IC (A)

VCE (sat) IB Characteristics (typ.)


(PNP)

1.4

(N PN )

1.3

Equivalent Circuit Diagram

1.0
1.0

R2

IC = 12A
9A
6A
3A

0.5

VCE (sat) (V)

VCE (sat) (V)

a) Part No.
b) Lot No.

100mA

60mA

IC (A)

m
50

60mA

A
0m
100mA

20

I
20 B =
0m
A

10

(N PN )

12

m
150

R1: 500 Typ.


R2: 500 Typ.

0.5

1A

12A

IC = 1A
0
7 10

100

IB (mA)

1000 3000

0
5

10

3A

100

6A

3
6

7
10

12

9A
R1
1

1000

11

3000

IB (mA)

99

Surface-mount Power Transistor Array SPF0001

Tj
Tstg

Electrical Characteristics

(Ta=25C)
Unit
V
V
V
A
A
W
C
C

Symbol

Test Conditions

ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b

VCB = 105V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.2A, IB = 12mA
I FEC = 6A
L = 10mH

(Ta=25C)
Ratings
typ

min

105
400

max
10
10
125
1500
0.12
1.5

115
800
0.08
1.25

45

External Dimensions SPF 20pin

Unit
14.740.2

A
A
V

13.040.2

+0.1

20

1.0 0.05
Fin
thickness

11

V
V
mJ

b
10

1
+0.15

1.270.25

0.4 0.05

+0.15

0.250.05

2.50.2

* Use glass epoxy substrate (FR4) 70mm 100mm1.6mm

(11.43)

4-( 0.8)
10

hFE IC Temperature Characteristics (typ.)

VCE (sat) IB Temperature Characteristics (typ.)

(VCE = 1V)

F1

20

(IC = 1.2A)

0.5

F2

(2.4)

(4.7)

(3.05)

1000

10.50.3

Ratings
11510
11510
6
6 (pulse 10)
1
2.5 (Ta = 25C)
150
55 to +150

7.50.2

Symbol
VCBO
VCEO
VEBO
IC
IB
PT *

20.2

Absolute Maximum Ratings

a) Part No.
b) Lot No.

11

(13.54)

(Unit: mm)

500

VCE (sat) (V)

150C

hFE

25C

100

55C

50

10
0.1

0.5

0.25

150C
25C
55C

0
0.001

56

0.01

0.1

IB (A)

IC (A)

IC VEC Temperature Characteristics (typ.)

IC VBE Temperature Characteristics (typ.)


(VCE = 1V)

10

IC (A)

IC (A)

4
6
150C
25C
55C

150C
25C
55C

1
0
0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.2

0.4

Safe Operating Area (single pulse)

0.8

1.0

1.2

1.4

thermal resistance characteristics


Transient
(82361mm at the time of mounting the
100

20

recommended pattern of the glass epoxy board)

2 circuits operate

10

0.

5m

1m

j-a

10

j-a j-f

(C/W)

IC (A)

0.6

VBE (V)

VEC (V)

Equivalent Circuit Diagram

1 circuits
operate
2 circuits operate
1 circuits operate

F1

F2

j-f

0.1

18,19
0.1

10

VCE (V)

100

100

200

0.01
0.00001 0.0001 0.001

0.01

0.1

Power time (s)

10

100

12,13

Power Transistor Array STA315A

VFEC
RB
RBE
Es/b

* PW 1ms, Duty 25%

L = 10mH, single pulse

External Dimensions STA3 (LF400A)


20.20.2

V
V
V

k
mJ

b
a

0.50.15
7 2.54=17.780.25

C1.50.5

Typical Switching Characteristics


VCC
(V)
12

IC VCE Characteristics (typ.)


30m

IC
(A)
1

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
5

IB2
(mA)
0

ton
(s)
1.0

2
B

3
C

4
B

5
C

6
B

7
C

8
E

a) Part No.
b) Lot No.
(Unit: mm)

VCE (sat) IC Temperature Characteristics

(IC = 0.5A)

0.5

1
E

tf
(s)
2.5

tstg
(s)
8.5

VCE (sat) IB Temperature Characteristics

12

RL
()
12

(2.54)

1.00.25

4.00.2

VCE (sat)

(Ta=25C)
Unit
A
mA
V

9.00.2

ICBO
IEBO
VCEO
hFE

Ratings
10max
2.7max
31 to 41
400min
0.2max
0.5max
2.5max
800120
2.00.4
50min

1.20.2

Tj
Tstg

Test Conditions
VCB = 30V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 0.7A
IC = 0.5A, IB = 5mA
IC = 1A, IB = 5mA
IFEC = 2A

0.50.15

PT

Symbol

Unit
V
V
V
A
mA
W
W
C
C

2.30.2

Ratings
355
365
6
2 (pulse 3*)
30
3 (Ta=25C)
13.5 (Tc=25C)
150
55 to +150

11.30.2

Symbol
VCBO
VCEO
VEBO
IC
IB

4.70.5

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

3
IC/IB = 100

8mA
5mA

IC (A)

3mA
2mA

IB = 1mA

10

500
Ta = 125C
75C
25C
40C

VCC = 12V
IB = 5mA
IB = 0A

tstg
tf
ton

1
0.5

j-a t

10
5

1
0

0.5

1.0

1.5

2.0

10

100

1000

t (ms)

PT Ta Derating

(per element)

Characteristics

Ic (A)

Safe Operating Area (single pulse)

Single pulse

IC (A)

0.5

20

10

0.1
0.5

50

ton tstg tf (S)

1000

0.1

IC (A)

ton tstg t f IC Characteristics (typ.)

(VCE = 4V)

3000

50
0.01

400

IB (mA)

hFE IC Temperature Characteristics

100

100

(C/W)

VCE (V)

hFE

0
0

Ta = 125C
75C
25C
40C

j-a

Ta = 125C
75C
25C
40C

0.25

VCE (sat) (V)

VCE (sat) (V)

Equivalent Circuit Diagram

20

1m

10

s
5

PT (W)

IC (A)

1
0.5

ith

10

inf

ini

te

he

at

sin

RB

RBE
1
Without heatsink
natural air cooling

Withou

t heat

0.1
1

10

VCE (V)

50

sink

50

100

150

Ta (C)

101

Power Transistor Array STA335A

ICBO
IEBO
VCEO
hFE
VCE (sat)
Es/b

(Ta=25C)
Unit
A
A
V

Ratings
10max
10max
355
500min
0.5max
150min

External Dimensions STA3 (LF400A)


20.20.2

V
mJ

9.00.2

Test Conditions
VCB = 30V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 0.5A
IC = 1A, IB = 5mA
L = 10mH, single pulse

0.50.15

RL
()
12

IC
(A)
1

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
5

72.54=17.780.25

IB2
(mA)
5

ton
(s)
1.3

tstg
(s)
4.7

tf
(s)
1.2

C1.50.5

2
C

3
B

4
E

5
E

6
B

7
C

4.00.2

VCC
(V)
12

(2.54)

1.00.25

Typical Switching Characteristics

1.20.2

Tj
Tstg

Symbol

0.50.15

PT

Electrical Characteristics

Unit
V
V
V
A
A
W
W
C
C

2.30.2

Ratings
355
355
6
3
1
2.5 (Ta=25C)
12 (Tc=25C)
150
55 to +150

11.30.2

Symbol
VCBO
VCEO
VEBO
IC
IB

4.70.5

Absolute Maximum Ratings (Ta=25C)

a) Part No.
b) Lot No.
(Unit: mm)

IC VCE Characteristics (typ.)


15m

A
10
m
A

8m

VCE (sat) IB Temperature Characteristics

6m

VCE = 4V

4mA

2mA
IB =1mA

Ta = 125C
75C
25C
55C

0
0.002

0.01

0.05 0.1

VCE (V)

20

0.5

500
Ta = 125C
75C
25C
55C

tstg

VCE = 12V
IB1 = IB2 = 5mA

10

j-a t

Characteristics

tf

Single pulse

10

1
0.5

ton

0.3
0.05

0.1

0.5

IC (A)

0.1
0.1

10

Ic (A)

Safe Operating Area (single pulse)

100

1000

t (ms)

PT Ta Derating

(per element)

1.5

20

0.5

0.5

1.0

VBE (V)

(C/W)

ton tstg tf (S)

1000

10

0.4

ton tstg t f IC Characteristics (typ.)

(VCE = 4V)

5000

0.05 0.1

Ta = 55C
25C
75C
125C

IB (A)

hFE IC Temperature Characteristics (typ.)

100
0.01

j-a

0.5

IC (A)

IC (A)

VCE (sat) (V)

3mA

hFE

5mA

IC VBE Temperature Characteristics (typ.)

(IC = 1A)

Equivalent Circuit Diagram

15

1m

10

ith

(T

c=

25

at

10

102

ci

rc

ui

op

er

50

at

t heat

VCE (V)

(A

ts

Withou

nk

ll

0.5

0.2

si

he

PT (W)

IC (A)

ite

10

0m

DC

in

fin

10

sink (A

ll circui

e)

ts oper

50

ate)

100

Ta (C)

150

5000

Power Transistor Array STA415A

L = 10mH, single pulse

0.2

2.3

9.0

0.2

0.2

V
V
V

k
mJ

b
a

0.25

IC VCE Characteristics (typ.)


30m

IC
(A)
1

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
5

IB2
(mA)
0

ton
(s)
1.0

0.3

0.05

9 2.54=22.86

0.5

C1.5

tstg
(s)
8.5

tf
(s)
2.5

a) Part No.
b) Lot No.
(Unit: mm)

VCE (sat) IC Temperature Characteristics

(IC = 0.5A)

0.5

0.3

1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E

VCE (sat) IB Temperature Characteristics

12

RL
()
12

0.5

Typical Switching Characteristics


VCC
(V)
12

(2.54)

0.15

1.0

0.2

25%

0.2

25.25

0.2

VFEC
RB
RBE
Es/b

External Dimensions STA4 (LF412)

4.0

VCE (sat)

(Ta=25C)
Unit
A
mA
V

0.15

* PW 1ms, Duty

ICBO
IEBO
VCEO
hFE

Ratings
10max
2.7max
31 to 41
400min
0.2max
0.5max
2.5max
800120
2.00.4
50min

1.2

Tj
Tstg

Test Conditions
VCB = 30V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 0.7A
IC = 0.5A, IB = 5mA
IC = 1A, IB = 5mA
IFEC = 2A

0.5

PT

Symbol

Unit
V
V
V
A
mA
W
W
C
C

11.3

Ratings
355
365
6
2 (pulse 3*)
30
4 (Ta = 25C)
18 (Tc = 25C)
150
55 to +150

0.5

Symbol
VCBO
VCEO
VEBO
IC
IB

3.5

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

3
IC /IB = 100

8mA
5mA

IC (A)

3mA
2mA

IB = 1mA

10

500
Ta = 125C
75C
25C
40C

VCC = 12V
IB = 5mA
IB = 0A

tstg

j-a t

Characteristics
Single pulse

tf
ton

1
0.5

1
0

0.5

1.0

1.5

2.0

10

100

Ic (A)

Safe Operating Area (single pulse)

1000

t (ms)

PT Ta Derating

(per element)

10

IC (A)

0.5

20

10

0.1
0.5

50

ton tstg tf (S)

1000

0.1

IC (A)

tontstgtf IC Characteristics (typ.)

(VCE = 4V)

3000

50
0.01

400

IB (mA)

hFE IC Temperature Characteristics

100

100

(C/W)

VCE (V)

hFE

0
0

Ta = 125C
75C
25C
40C

j-a

Ta = 125C
75C
25C
40C

0.25

VCE (sat) (V)

VCE (sat) (V)

Equivalent Circuit Diagram

20

1m

10

s
3

he

10

si

at
nk

PT (W)

ite

0.5

fin

in

IC (A)

ith
W

RB

RBE
1
Without heatsink
natural air cooling

With

out h

0.1
1

10

VCE (V)

50

10

eatsin

50

100

150

Ta (C)

103

Power Transistor Array STA460C

0.2

b
a

V
V
mJ

0.25

(2.54)

0.15

1.0

0.5

0.3

0.3

0.05

0.5

0.5

C1.5

0.2

92.54 = 22.86

0.2

200

0.2

25.25

A
A
V

9.0

60
1500
0.09
1.25

50
700

Unit

0.2

VCB = 50V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
IFEC = 6A
L = 10mH, single pulse

max
10
10
70
3000
0.15
1.5

0.2

ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b

min

2.3

Test Conditions

4.0

C
C

Symbol

External Dimensions STA4 (LF412)

0.15

Tj
Tstg

(Ta=25C)
Ratings
typ

1.2

PT

Unit
V
V
V
A
A

11.3

Ratings
6010
6010
6
6
10 (Pw 1ms, Du 50%)
3.2 (Ta = 25C)
18 (Tc = 25C)
150
40 to +15

0.5

Symbol
VCBO
VCEO
VEBO
IC
ICP

3.5

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E

a) Part No.
b) Lot No.
(Unit: mm)

IC VCE Characteristics (typ.)

hFE IC Characteristics (typ.)


typ

75C 25C
1000

10m

5mA

500

500

3mA

3
2

100

1mA

1
0

1000
55C

h FE

30
0.01

VCE (V)

0.25

50
0.05 0.1

0.5 1

30
0.01

10

0.05 0.1

IC (A)

VCE (sat) IB Temperature Characteristics (typ.)

Ta = 55C
25C
75C
125C

0.5

100

50
0

(IC /IB = 100)

0.75

Ta = 125C

VCE (sat) (V)

IC (A)

mA

20

IB

=3

(VCE = 1V)

5000

h FE

0m

hFE IC Temperature Characteristics (typ.) VCE (sat) IC Temperature Characteristics (typ.)

(VCE = 1V)

5000

10

0.5 1

0
0.01

10

0.05 0.1

0.5 1

IC (A)

IC VBE Temperature Characteristics (typ.)

0.75

j-a PW

(VCE = 1V)

5 10

IC (A)

Characteristics

20
10

5
j-a (C/W)

IC (A)

0.25
IC = 3A

1.5A

0.5A
0
1

10

50 100

500

75C

Ta =

125

25C
55C

VCE (sat) (V)

5
0.5

0.5

IB (mA)

1
0.5

0.1
0.05
0.1

1.5

1.0

0.5 1

VBE (V)

5 10

50 100

500 1000 2000

PW (ms)

Equivalent Circuit Diagram


PT Ta Derating

Safe Operating Area


20

20

10

10m

1m

ith
W

15

ms
0.5

Silicone grease used


Vertical self-excitation

IC (A)

he
k

sin

at

PT (W)

te

ini

inf

10

0.5
5
Without heatsink

Single pulse

0.1 Without heatsink


0
55

Ta=25C

50

Ta (C)

104

100

150

0.05
0.5

10

VCE (V)

50 100

Power Transistor Array STA461C

External Dimensions STA4 (LF400B)


0.2

25.25

V
V
mJ

0.2

9.0

0.2

(Ta=25C)
Unit
A
A
V

0.2

ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b

Ratings
10max
10max
60 to 70
400 to 1500
0.15max
1.5max
80min

2.3

Test Conditions
VCB = 60V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
IFEC = 6A
L = 10mH, single pulse

(2.54)

0.15

0.25

0.5

1.0

0.05

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
30

IB2
(mA)
30

ton
(s)
0.2

t stg
(s)
3.9

0.5

C1.5

tf
(s)
0.2

1 2 3 4
B C E

0.2

IC
(A)
1

0.2

RL
()
12

4.0

VCC
(V)
12

0.15

9 2.54=22.86

Typical Switching Characteristics

1.2

Tj
Tstg

Symbol

0.5

PT

Unit
V
V
V
A
A
W
W
C
C

11.3

Ratings
655
655
6
6 (pulse 10)
1
3.2 (Ta = 25C)
18 (Tc = 25C)
150
55 to +150

0.5

Symbol
VCBO
VCEO
VEBO
IC
IB

4.7

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

7 8 9 10
B C E

a) Part No.
b) Lot No.
(Unit: mm)

IC VCE Characteristics (typ.)


7

(VCE = 1V)

0.75

30mA

IC / IB = 100

20mA

IC VBE Temperature Characteristics (typ.)

VCE (sat) IC Temperature Characteristics (typ.)

5
5mA

Ta = 55C
25C
75C
125C

3mA

0.25

0
0.01

0.1

10

Ta = 125C
75C
25C
55C

Characteristics

VCC = 12V
IB1 = IB2 = 30mA

Single pulse

0.5

1
0.5

tf

10

0.1

ton

0.1
0.1

j-a t

(C/W)

tontstgtf (S)

hFE

500

0.05
0.1

Ic (A)

IC (A)

Safe Operating Area (single pulse)

1.5

10

tstg

1000

1.0

VBE (V)

ton tstg t f IC Characteristics

(VCE = 1V)

2000

50
0.01

0.5

IC (A)

hFE IC Temperature Characteristics (typ.)

10

100

2000

t (ms)

PT Ta Derating

20

Equivalent Circuit Diagram

20

0.5m

10

ith
W

15

PT (W)

0.5

nk
si
at
he

ite
fin
in

10m

1m

IC (A)

2
1

VCE (V)

100

Ta = 125C
75C
25C
55C

IB = 1mA

1
0

0.5

j-a

IC (A)

IC (A)

VCE (sat) (V)

10mA

10

5
Withou

t heat

Without heatsink
natural air cooling

0.1
1

10

VCE (V)

50

100

sink

50

4
100

150

Ta (C)

105

Power Transistor Array STA463C

External Dimensions STA4 (LF400B)


0.2

25.25

V
V
mJ

0.2

9.0

0.2

(Ta=25C)
Unit
A
A
V

0.2

ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b

Ratings
10max
10max
105 to 125
400 to 1500
0.12max
1.5max
45min

2.3

Test Conditions
VCB = 105V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.2A, IB = 12mA
IFEC = 6A
L = 10mH, single pulse

(2.54)

0.15

0.25

0.5

1.0

0.05

VBB1
(V)
10

VBB2
(V)
5

IB1
(mA)
30

IB2
(mA)
30

t on
(s)
0.2

t stg
(s)
5.7

0.5

C1.5

tf
(s)
0.4

1 2 3 4
B C E

0.2

IC
(A)
1

0.2

RL
()
12

4.0

VCC
(V)
12

0.15

9 2.54=22.86

Typical Switching Characteristics

1.2

Tj
Tstg

Symbol

0.5

PT

Electrical Characteristics

Unit
V
V
V
A
A
W
W
C
C

11.3

Ratings
11510
11510
6
6 (pulse 10)
1
3.2 (Ta=250C)
18 (Tc=25C)
150
55 to +150

0.5

Symbol
VCBO
VCEO
VEBO
IC
IB

4.7

Absolute Maximum Ratings (Ta=25C)

7 8 9 10
B C E

a) Part No.
b) Lot No.
(Unit: mm)

IC VCE Characteristics (typ.)

VCE (sat) IC Temperature Characteristics (typ.)

20mA

10mA
5mA

4
3

3mA

Ta = 55C
25C
75C
150C

0.25

4
3
2

IB = 1mA

1
0

0
0.01

0.1

(VCE = 4V)

2000

tstg

1
0.5

1.0

ton
0

10

Characteristics

VCE (sat) IB Temperature Characteristics (typ.)

Single
transistor
operated

10
5
1

0.1
0.0001 0.001

0.01

0.1

10

t (s)

PT Ta Derating
(Tc = 25C)

20

0.75

Dual
transistor
operated

Single pulse

Ic (A)

IC (A)

1.5

0.5

VCC = 12V
IB1 = IB2 = 30mA

tf
0.1

j-a t

100
50

(C/W)

Ta = 150C
75C
25C
55C

j-a

tontstgtf (S)

500

hFE

0.5

VBE (V)

10

1000

0.1

ton tstg t f IC Characteristics

hFE IC Temperature Characteristics (typ.)

50
30
0.01

IC (A)

VCE (V)

100

Ta = 150C
75C
25C
55C

5
0.5

IC (A)

30mA

VCE (sat) (V)

(VCE = 1V)

7
I C /IB = 100

IC (A)

IC VBE Temperature Characteristics (typ.)

0.75

Equivalent Circuit Diagram

15

PT (W)

nk
si
at
he

0.25

ite
fin
in

0.5
Ta = 150C
75C
25C
55C

ith
W

VCE (sat) (V)

IC = 1.2A

10

5
Withou

t heat

10

100

IB (mA)

106

1000

sink

50

100

Ta (C)

150

100

1000

Power Transistor Array STA464C

0.2

V
V
mJ

(2.54)

0.15

0.25

0.5

1.0

0.05

0.5

0.5

C1.5

0.2

9 2.54= (22.86)
(Root dimension)

0.2

80

0.2

9.0

60
400

25.25

A
A
V

0.2

65
800
0.09
1.25

10
10
70
1500
0.15
1.5

Unit

0.2

VCB=60V
VEB=6V
IC=50mA
VCE=1V, IC=1A
IC=1.5A, IB=15mA
IFEC=6A
L=10mH

max

2.3

ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b

min

4.0

C
C

Test Conditions

External Dimensions STA4

0.15

Tj
Tstg

Symbol

(Ta=25C)
Ratings
typ

1.2

PC

Electrical Characteristics

Unit
V
V
V
A
A

11.3

Ratings
655
655
6
6 (pulse 10)
1
20 (Tc=25C)
4 (Ta=25C)
150
55 to +150

0.5

Symbol
VCBO
VCEO
VEBO
IC
IB

3.5

Absolute Maximum Ratings (Ta=25C)

1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E

a) Part No.
b) Lot No.
(Unit: mm)

VCE (sat) IC Temperature Characteristics (typ.)

IC VCE Characteristics (typ.)


7

30mA

(VCE = 1V)

6
I C /IB = 100

20mA

IC VBE Temperature Characteristics (typ.)

0.75

IC (A)

5mA

Ta= 55C
25C
75C
125C

3mA

0.25

1
0

0
0.01

0.1

VCE (V)

10

0.5

1.0

ton tstg t f IC Characteristics

(VCE = 1V)

2000

1.5

VBE (V)

IC (A)

hFE IC Temperature Characteristics (typ.)

tstg

tontstgtf (S)

1000

hFE

500
Ta = 125C
75C
25C
55C

100

VCC = 12V
IB1 = IB2 = 30mA

1
0.5

tf
ton

0.1

50
0.01

0.1

10

Ic (A)

IC (A)

Safe Operating Area (single pulse)

PT Ta Derating

20

Equivalent Circuit Diagram

20

0.5m

10

ith

15

fin
in

s
1m
s
10m

2
4

Witho

ut he

Without heatsink
natural air cooling

0.1
1

10

VCE (V)

50

100

k
sin

10

0.5

at

he

PT (W)

ite

IC (A)

Ta = 125C
75C
25C
55C

IB = 1mA

1
0

0.5

IC (A)

VCE (sat) (V)

10mA

8
10

atsin

50

100

150

Ta (C)

107

MOS FET 2SK3710 (under development)

Features

Applications

ON resistance 0.0060 max.


Built-in G-S bidirectional Zener diode
Trench MOS structure

Power steering motor


Various motors
Replaces mechanical relays

External Dimensions

108

130
400
150
55 to +150

Unit
V
V
A
A
W
mJ
C
C

Symbol

Test Conditions

V(BR) DSS
IGSS
IDSS
VTH
RDS (ON)
VSD
t rr
Ciss
Coss
Crss

ID = 100A
VGS = 20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 250A
VGS = 10V, ID = 35A
ISD = 50A
ISD = 25A, di/dt = 50A/s
VDS = 10V
VGS = 10V
f = 1.0MHz

min

Ratings
typ

max

60

2
5.0
0.9
110
9400
1400
1100

10
100
4
6.0
1.5

Unit
V
A
A
V
m
V
ns
pF
pF
pF

(1.4)
+0.3

9.10.3

+0.2

0.1 0.1

+0.2
0.86 0.1

3 0.5

+0.3

1.20.2

2.540.1

2.540.1

10.2 0.3

0.1

0.4

(5.4)

1.40.2

Ratings
60
20
70
140

(Ta=25C)

(1.3)

Symbol
VDSS
VGSS
ID
ID (pulse)
PD
EAS
Tch
Tstg

Electrical Characteristics

1.30.2

2.60.2

(1.5)

Absolute Maximum Ratings (Ta=25C)

4.440.2

10.5 0.5

(0.45)

(5)

TO220S

Details of the back (S=2/1)

(Unit: mm)

MOS FET 2SK3711

External Dimensions

Electrical Characteristics

Unit
V
V
A
A
W
mJ
C
C

130
To be defined
150
55 to +150

* 1: PW 100s, duty cycle 1%


* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 50
* Contact your sales rep for the details of warranty
at Tch = 175C

ID VDS Characteristics (typ.)

Test Conditions

V(BR) DSS
IGSS
IDSS
VTH
RDS (ON)
VSD
t rr
Ciss
Coss
Crss

ID = 100A
VGS = +20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 250A
VGS = 10V, ID = 35A
ISD = 50A
ISD = 25A, di/dt = 50A/s

70

60

60
10V
8V
6V

40

VGS = 5V

30

10
0.5

(3)

(Unit: mm)

Re (yfs) ID Characteristics (typ.)

0.6
0.4

(VDS = 10V)
Tc = 55C
25C
150C

ID = 70A

10

35A
1
0

10

15

20

10

VGS (V)

70

ID (A)

j-c Pw

VGS = 10V

12.0

6.0

Characteristics

10

4.0
3.0
2.0

j-c (C/W)

RDS (ON) (m)

10.0

5.0

8.0
6.0
4.0

0.1

2.0
0

10

20

30

40

50

60

0
60 50

70

ID (A)

50

100

0.01

Tc (C)

(Ta = 25C)

60

Ciss

50

100

40

10

100

t)

(O

t)

ms

80
60

20

t)

ho

(1s

Tc = 150C
25C
55C

ho

10

IC (A)

N)

RD

(With infinite heatsink)

120

0
s(
1s

ED

IT

M
LI

ho

Coss

100

30

10

140

50

1s

1000

ID (pulse) max

s(

IDR (A)

10000

(Ta = 25C)

500

1m

VGS = 0V
f = 1MHz

Safe Operating Area (single pulse) PD TC Characteristics

(Ta = 25C)

70

0.1

Pw (sec)

Capacitance VDS Characteristics IDR VSD Characteristics


50000

0.01
0.0001 0.001

150

PD (W)

1.0

Capacitance (pF)

(2)

a) Part No.
b) Lot No.

1. Gate
2. Drain
3. Source

500

RDS (ON) TC Characteristics (typ.) ID = 35A

VGS = 10V

7.0

RDS (ON) (m)

1.4

5.450.1

(1)

0.2

0.65 0.1

15.80.2

1.0

VGS (V)

RDS (ON) I D Characteristics (typ.) Ta = 25C

5.450.1

VDS VGS Characteristics (typ.)

Tc = 150C
100C
50C
25C
0C
40C

+0.2

+0.2

1.05 0.1

100

VDS (V)

5.0
0.9
70
7800
1250
990

2
3

0.8

30

10

V
A
A
V
m
V
ns
pF
pF
pF

10
100
4
6.0
1.2

(VDS = 10V)

40

20

Unit

max

60

50

20

min

Ratings
typ

VDS = 10V
VGS = 10V
f = 1.0MHz

80

ID (A)

ID (A)

Symbol

70

50

(Ta=25C)

ID VGS Characteristics (typ.)

(Ta = 25C)

80

2.00.1

3.20.1

Re (yfs) (S)

Ratings
60
20
70
140

VDS (V)

Symbol
VDSS
VGSS
ID
ID (pulse)
PD
EAS
Tch
Tstg

4.80.2

20.0 min
4.0 max

Absolute Maximum Ratings (Ta=25C)

15.60.4
13.6
9.6

TO-3P

1.8
5.00.2

Power steering motor


Various motors
Replaces mechanical relays

2.0

Applications

ON resistance 0.006 max.


Built-in G-S bidirectional Zener diode
Trench MOS structure

19.90.3
4.0

Features

40

Crss
10
100

20

0
0

10

20

30

VDS (V)

40

50

0.2

0.4

0.6

0.8

VSD (V)

1.0

1.2

1.4

0.1
0.1

0
1

10

VDS (V)

100

50

100

150

Tc (C)

109

MOS FET 2SK3724 (under development)

External Dimensions

60
To be defined
150
55 to +150

Unit
V
V
A
A
W
mJ
C
C

* Contact your sales rep for the details of warranty


at Tch = 175C

110

Symbol

Test Conditions

V(BR) DSS
IGSS
IDSS
VTH
RDS (ON)
VSD
t rr
Ciss
Coss
Crss

ID = 100A
VGS = 20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 1mA
VGS = 10V, ID = 40A
ISD = 50A
ISD = 25A, di/dt = 50A/s
VDS = 10V
VGS = 10V
f = 1.0MHz

min

Ratings
typ

max

60

1
4.0
0.9
To be defined
10600
1600
1300

10
100
2
5.0
1.5

Unit

V
A
A
V
m
V
ns
pF
pF
pF

9.10.3

+0.2

0.1 0.1

+0.2
0.86 0.1

2.540.1

2.540.1

10.20.3

3 0.5

+0.3

1.20.2

0.1

0.4

(5.4)

1.40.2

Ratings
60
20
80
160

(Ta=25C)

1.30.2

2.60.2

(1.3)

Symbol
VDSS
VGSS
ID
ID (pulse)
PD
EAS
Tch *
Tstg

Electrical Characteristics

(1.5)

Absolute Maximum Ratings (Ta=25C)

4.440.2

(1.4)

(5)

TO220S

+0.3

Power steering motor


Various motors
Replaces mechanical relays

10.5 0.5

Applications

ON resistance 0.005 max.


Built-in G-S bidirectional Zener diode
Trench MOS structure

(0.45)

Features

Details of the back (S=2/1)

(Unit: mm)

MOS FET 2SK3800

ID VDS Characteristics (typ.)

VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 35A
VDD = 20V, RG = 22
RL = 0.57, VGS = 10V
ISD = 50A, VGS = 0V
ISD = 25A, di/dt = 50A/s

70

60

60

50

50

1.2

2.540.1

30

20

20

10

10

(VDS = 10V)

500

0.5

1.0

1.5

2.0

1.0

2.0

VDS (V)

Ta = 25C
VGS = 10V

ID = 70A
0.2

4.0

5.0

6.0

Tc = 55C
25C
150C

35A
1
0

10

15

20

j-c

t Characteristics (Single pulse)

(ID = 35A)

30

2.0

15

VDS

8.0
6.0
4.0

20

10

VDS (V)

3.0

70

Dynamic I/O Characteristics (typ.)

10

j-c (C/W)

4.0

10

ID (A)

10.0

5.0

VGS
VDD = 8V
12V
14V
16V
24V

10

0.1

2.0

10

20

30

40

50

60

0
60 50

70

ID (A)

50

100

150

(Ta = 25C)

50000

0.01
0.00001 0.0001 0.001 0.01

Tc (C)

PT

N)

IC (A)

IDR (A)

IT

50
40
Ta = 150C
25C
55C

Coss
20

10

PT

ED

Ciss

1000

100

LI

PT

(O

RD

PT
=1

=1

30

VDS (V)

40

50

0
150

70

00
s

=1

60

0m

50
40
30

20
10

0
20

100

80

0
s

10
10

50

90

=1

Crss

(Ta = 25C)

100

30

10

Qg (nC)

500

60

10000

Safe Operating Area (single pulse) PD TC Characteristics

70

VGS = 0V
f = 1MHz

0
0.1

t (s)

Capacitance VDS Characteristics (typ.) IDR VSD Characteristics (typ.)

100

10

VGS (V)

ID = 35A
VGS = 10V

12.0

1.0

Capacitance (pF)

7.0

RDS (ON) TC Characteristics (typ.)

RDS (ON) (m)

RDS (ON) (m)

6.0

0.4

VGS (V)

RDS (ON) I D Characteristics (typ.)


7.0

3.0

0.6

PD (W)

Ta = 150C
25C
55C

Details of the back (S=2/1)

Re (yfs) ID Characteristics (typ.)

(Ta = 25C)

Re (yfs) (S)

VGS = 4.5V

(5.4)

(Unit: mm)

100

40

0.1

0.4

2.540.1

10.20.3

1.0

VDS (V)

30

ID (A)

ID (A)

10V
5.5V
5.0V

+0.2

0.1 0.1
+0.3

+0.2
0.86 0.1

0.8

40

2.60.2

1.20.2

VDS VGS Characteristics (typ.)

(VDS = 10V)

1.30.2

3 0.5

6.0

1.56
62.5

ID VGS Characteristics (typ.)

70

10
100
4.0

3.0
50
5.0
5100
1200
860
100
100
300
130
0.9
110

2.0
30

(5)

V
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
ns
C/W
C/W

4.440.2

(1.4)

40

+0.3

ID = 100A, VGS = 0V
VGS = 15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 35A
VGS = 10V, ID = 35A

Unit

max

VGS (V)

RG = 50

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
t rr
R th (ch-c)
R th (ch-a)

min

1.40.2

* 1: PW 100s, duty cycle 1%


* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,

Test Conditions

(1.3)

80 (Tc=25C)
400
150
40 to +150

Symbol

External Dimensions TO220S

(Ta=25C)
Ratings
typ

9.10.3

Electrical Characteristics

Unit
V
V
A
A
W
mJ
C
C

10.5 0.5

Ratings
40
20
70
140

(1.5)

Symbol
VDSS
VGSS
ID
ID (pulse)*1
PD
EAS*2
Tch
Tstg

(0.45)

Absolute Maximum Ratings (Ta=25C)

0.2

0.4

0.6

0.8

VSD (V)

1.0

1.2

1.4

0.1
0.1

0
1

10

VDS (V)

100

20

40

60

80 100 120 140 160

Tc (C)

111

MOS FET 2SK3801

100 (Tc=25C)
400
150
40 to +150

* 1: PW 100s, duty cycle 1%


* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 50

ID VDS Characteristics (typ.)

Symbol

Test Conditions

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
t rr
R th (ch-c)
R th (ch-a)

ID = 100A, VGS = 0V
VGS = 15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 35A
VGS = 10V, ID = 35A

min

VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 35A
VDD = 20V, RG = 22
RL = 0.57, VGS = 10V
ISD = 50A, VGS = 0V
ISD = 25A, di/dt = 50A/s

70

60

60

V
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
ns
C/W
C/W

10
100
4.0

3.0
50
5.0
5100
1200
860
100
100
300
130
0.9
100

2.0
30

6.0

1.5
1.25
35.71

30

20

20

10

10

0.5

1.0

1.5

2.0

Ta = 150C
25C
55C

1.0

2.0

(1)

(2)

VDS (V)

0.4

(3)

4.0

5.0

6.0

7.0

Ta = 25C
VGS = 10V

(VDS = 10V)

1000

ID = 35A
VGS = 10V

10.0

Tc = 55C
25C
150C

100

10

1
5

10

15

20

10

VGS (V)

RDS (ON) TC Characteristics (typ.)

(Unit: mm)

35A

VGS (V)

RDS (ON) I D Characteristics (typ.)


7.0

0.6

0.2

a) Part No.
b) Lot No.

1. Gate
2. Drain
3. Source

Re (yfs) ID Characteristics (typ.)

(Ta = 25C)

ID = 70A

3.0

1.4

5.450.1

Re (yfs) (S)

VGS = 4.5V

40

0.65 0.1

15.80.2

1.0

VDS (V)

30

ID (A)

ID (A)

40

+0.2

+0.2

1.05 0.1

50

10V
5.5V
5.0V

2.00.1

0.8
50

4.80.2

3.20.1

a
b

5.450.1

VDS VGS Characteristics (typ.)

(VDS = 10V)

15.60.4
13.6
9.6

Unit

max

40

ID VGS Characteristics (typ.)

70

External Dimensions TO-3P

(Ta=25C)
Ratings
typ

1.8
5.00.2

Electrical Characteristics

Unit
V
V
A
A
W
mJ
C
C

2.0

Ratings
40
20
70
140

19.90.3
4.0

Symbol
VDSS
VGSS
ID
ID (pulse)*1
PD
EAS*1
Tch
Tstg

20.0 min
4.0 max

Absolute Maximum Ratings (Ta=25C)

j-c

70

ID (A)

Pw Characteristics (Single pulse) Dynamic I/O Characteristics (typ.)


(ID = 35A)

30

10

6.0

15

VDS

2.0

4.0

20

10
VGS
VDD = 8V
12V
14V
16V
24V

10

0.1

VGS (V)

3.0

6.0

VDS (V)

4.0

j-c (C/W)

RDS (ON) (m)

RDS (ON) (m)

8.0
5.0

2.0
1.0
0

10

20

30

40

50

60

0
60 50

70

ID (A)

50

100

150

Tc (C)

(Ta = 25C)

10

100

ED

N)

Ciss

IDR (A)

PT

IT

50
40
Ta = 150C
25C
55C

30

Coss
20

10

M
LI

PT

(O

RD

PT
=1

20

30

VDS (V)

112

40

50

0
150

=1

100

00

=1
m
0m s
s

80
60
40

1
20

0
10

100

120

10
0

50

=1

Crss

100

(Ta = 25C)
PT

60

10000

100

Qg (nC)

500

IC (A)

Capacitance (pF)

Safe Operating Area (single pulse) PD TC Characteristics

70

VGS = 0V
f = 1MHz

1000

0
0.1

Pw (s)

Capacitance VDS Characteristics (typ.) IDR VSD Characteristics (typ.)


50000

0.01
0.00001 0.0001 0.001 0.01

PD (W)

0.2

0.4

0.6

0.8

VSD (V)

1.0

1.2

1.4

0.1
0.1

0
1

10

VDS (V)

100

20

40

60

80 100 120 140 160

Tc (C)

MOS FET 2SK3803 (under development)

* 1: PW 100s, duty cycle 1%


* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 50

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
t rr

ID = 100A, VGS = 0V
VGS = 15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 42A
VGS = 10V, ID = 42A
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 42A
VDD = 20V, RG = 22
VGS = 10V
ISD = 50A, VGS = 0V
ISD = 25A, di/dt = 50A/s

min

max

40
10
100
4.0

2.0
50
2.1
10500
2400
1900
90
230
490
760
0.85
90

3.0

1.2

Unit

V
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
ns

4.440.2

10.20.3

1.30.2

1.6

b
(1.5)

Test Conditions

External Dimensions TO220S

(1.4)

Symbol

(Ta=25C)
Ratings
typ

+0.3

Electrical Characteristics

10.0 0.5

100 (Tc=25C)
730
150
55 to +150

Unit
V
V
A
A
W
mJ
C
C

8.60.3

Ratings
40
20
85
170

+0.2

0.10.1

1.270.2

+0.3

Symbol
VDSS
VGSS
ID
ID (pulse)*1
PD
EAS*2
Tch
Tstg

3.0 0.5

Absolute Maximum Ratings (Ta=25C)

+0.2

0.86 0.1

0.40.1

1.20.2
2.540.5

2.540.5

a) Part No.
b) Lot No.
(Unit: mm)

113

MOS FET 2SK3851

150
280
150
55 to +150

* 1: PW 100s, duty cycle 1%


* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped

ID VDS Characteristics

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
t rr

ID = 100A, VGS = 0V
VGS = 20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 42A
VGS = 10V, ID = 42A

min
60

2.0
30

4.0
11500
1500
1100
60
25
370
65
0.87
70

VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 42A
VDD 16V
RG = 22
VGS = 10V
ISD = 50A, VGS = 0V
ISD = 50A, di/dt = 100A/S

4.7

1.5

4.80.2
2.00.1

3.20.1

a
b

2
3

+0.2

+0.2

0.65 0.1

1.05 0.1

5.450.1

1.4

5.450.1
15.80.2

(1)

VDS VGS Characteristics


(VDS = 10V)

100

V
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
ns

10
100
3.0

2.5

15.60.4
13.6
9.6

Unit

max

(3)

a) Part No.
b) Lot No.
(Unit: mm)

Re (yfs) ID Characteristics

(Ta = 25C)

1.0

(2)

1. Gate
2. Drain
3. Source

(VDS = 10V)

500

10V

80

0.8

80

70

100

40
VGS = 4.0V

30
20

60
Ta = 150C
25C
55C

40

Re (yfs) (S)

ID (A)

50

VDS (V)

4.5V

60

ID (A)

Test Conditions

ID VGS Characteristics

(Ta = 25C)

90

Symbol

External Dimensions TO-3P

(Ta=25C)
Ratings
typ

2.0

Unit
V
V
A
A
W
mJ
C
C

19.90.3
4.0

Ratings
60
20
85
280

20.0 min
4.0 max

Symbol
VDSS
VGSS
ID
ID (pulse)*1
PD
EAS*2
Tch
Tstg

1.8
5.00.2

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

0.6

0.4

ID = 85A

0.2

20

55C
25C
150C

10

ID = 42A

10
0
0

0.4

0.8

1.2

1.6

2.0

0
1

VDS (V)

6.0

10 12 14 16 18

VGS (V)

RDS (ON) TC Characteristics

Ta = 25C
VGS = 10V

8.0

VGS = 10V
ID = 25A

j-c t

RDS (ON) (m)

4.0

Characteristics (Single pulse)

10

3.0
2.0
1.0

6.0
5.0
4.0
3.0

0.1

2.0
1.0

0
0

10

20

30

40

50

60

70

80

0
100

90

50

ID (A)

50

120
Ta = 150C
25C
55C

IDR (A)

50

PD (W)

Capacitance (pF)

140

60

40

Crss
30

VDS (V)

40

50

60

60

0
20

80

20

10

500

100

40

20
Coss
10

160

70

30

0.01

0.001

PD TC Characteristics

80

Ciss

1000

0.01
0.0001

t (s)

(Ta = 25C)

90

Ta = 25C
VGS = 0V
f = 1MHz

10000

150

Tc (C)

Capacitance VDS Characteristics IDR VSD Characteristics


50000

100

0.2 0.4

0.6

0.8

VSD (V)

1.0

1.2 1.4

25

50

75

100

Tc (C)

10

ID (A)

7.0

5.0

114

VGS (V)

RDS (ON) I D Characteristics

RDS (ON) (m)

j-c (C/W)

125

150

0.1

10

50

100

MOS FET FKV460S

Electrical Characteristics

ID VDS Characteristics (typ.)

IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD

ID = 25A
VDD = 12V
RL = 0.48
VGS = 10V
ISD = 50A, VGS = 0V

(1.4)

A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V

1.5

1.30.2

1.6

+0.2

0.10.1

1.270.2
+0.2

0.40.1

0.86 0.1
1.20.2
2.540.5

2.540.5

a) Part No.
b) Lot No.
(Unit: mm)

VDS VGS Characteristics (typ.)

(VDS = 10V)

Re (yfs) ID Characteristics

(Ta = 25C)

1.0

(VDS = 10V)

500

0.8

Ta = 150C
25C
55C

30
20

0.6
ID = 60A

0.4
0.2

10

10

10

VGS (V)

14

RDS (ON) TC Characteristics

Ta = 25C
VGS = 10V

14

VGS = 10V
ID = 25A

10
8.0
6.0
4.0

j-a t

j-c

10

60

ID (A)

Characteristics (Single pulse)

50

12

RDS (ON) (m)

12

20

VGS (V)

10
8.0
6.0
4.0

(C/W)

RDS (ON) I D Characteristics

15

50

10

10A
0

10

j-a

55C
25C
150C

100

25A

j-c

Re (yfs) (S)

VGS = 3.0V

VDS (V)

40

ID (A)

30

VDS (V)

0.1

j-a
FR4 (70 100 1.6mm)

Use substrate
j-c

2.0

2.0
10

20

30

40

50

0
60 50

60

50

100

(Ta = 25C)
VGS = 0V
f = 1MHz

0.01

Crss

(Ta = 25C)

200
ID (pulse) max
100

50

ED

IT

PT

IM

5V

IC (A)

40
30
VGS = 10V
20

10

PT

L
N)
(O
DS

=1

60

50

0m

10

20

VDS (V)

30 35

40
30
20
10

0
0

10

70

=1

10
100

Safe Operating Area (single pulse) PD TC Characteristics

10V

IDR (A)

Coss

0.1

t (s)

(Ta = 25C)

60

Ciss

1000

0.001

Tc (C)

Capacitance VDS Characteristics IDR VSD Characteristics


10000

0.01
0.0001

150

PD (W)

ID (A)

Capacitance (pF)

50

20

RDS (ON) (m)

7
2800
1400
600
20
600
250
100
1.0

4.440.2

10.20.3

V
+10
5
100
2.3

1.3
20.0

ID VGS Characteristics (typ.)

10V
5.0V
4.0V

40

40

VDS = 10V
f = 1.0MHz
VGS = 0V

70

Unit

max

60

50

ID (A)

ID = 100A, VGS = 0V
VGS = +20V
VGS = 10V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 25A
VGS = 10V, ID = 25A

IGSS

(Ta = 25C)
3.5V

60

V(BR) DSS

Ratings
typ

min

(1.5)

* PW

Test Conditions

+0.3

60 (Tc=25C)
150
55 to +150
100s, duty 1%

Symbol

10.0 0.5

Unit
V
V
A
A
W
C
C

8.60.3

Ratings
40
+20, 10
60
180

+0.3

Symbol
VDSS
VGSS
ID
ID (pulse)*
PD
Tch
Tstg

External Dimensions TO220S

(Ta=25C)

3.0 0.5

Absolute Maximum Ratings (Ta=25C)

0.2

0.4

0.6

0.8

VSD (V)

1.0

1.2

0.1
0.1

0
1

VDS (V)

10

50

25

50

75

100 125 150

Tc (C)

115

MOS FET FKV660S

Electrical Characteristics

160

ID=25A
VDD=12V
RL=0.48
VGS=10V
ISD=50A, VGS=0V

20
4

10

12

VDS (V)

(1.4)
+0.3

(Unit : mm)

Re (yfs) ID Characteristics

ID = 60A
0.6
0.4
0.2

0.010

VGS = 10V

10

100

15

ID (A)

(Ta = 25C)

10000

VGS = 4V

0.015
VGS = 10V

0.010

0
60 50

50

100

Tc (C)

Ciss
1000

Coss

150

Crss
100
0

10

20

30

VDS (V)

180

Ta = 25C
VGS = 0V

Safe Operating Area (single pulse)


(Ta = 25C)

500
ID (pulse) max

160
100

140

ED

IT

IM

ID (A)

IDR (A)

120
100
80

10

DS

L
N)
(O

PT

PT

=1
m
s
0m
s

=1

60
1

40
20
0
0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD (V)

116

0.1
0.1

10

VGS = 0V
f = 1MHz

ID (A)

IDR VSD Characteristics

20

Capacitance VDS Characteristics


(ID = 25A)

0.020

200

10

VGS (V)

0.005

0.005

100

1
10

Capacitance (pF)

RDS (ON) ()

VGS = 4V

0.015

55C
25C
150C

10A
5

0.025

0.020

(VDS = 10V)

1000

25A

0.030

0.025

10

VDS (V)

0.40.1

a) Part No.
b) Lot No.

0.8

RDS (ON) TC Characteristics


(Ta = 25C)

0.030

+0.2
0.1 0.1

1.20.2
2.540.5

2.540.5

(Ta = 25C)

VGS (V)

RDS (ON) I D Characteristics

VDS (V)

ID (A)

Ta = 150C
100C
50C
25C
0C
55C

0.01

1.6

1.270.2
+0.2
0.86 0.1

1.0

40

1.5

1.4

0.001

14

1.30.2

1.2

0.1

VGS = 3.5V

A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V

VDS VGS Characteristics


(VDS = 10V)

10

80

(1.5)

11
2500
900
150
50
400
400
300
1.0

100

4V

60

RDS (ON) ()

1.0
20

4.440.2

10.20.3

V
+10
5
100
2.5

VDS=10V
f=1.0MHz
VGS=0V

1000

Unit

max

60

4.5V

100

min

ID VGS Characteristics

120

ID (A)

ID=100A, VGS=0V
VGS =+20V
VGS =10V
VDS=60V, VGS=0V
VDS=10V, ID=250A
VDS=10V, ID=25A
VGS=10V, ID=25A

IDSS
VTH
Re (yfs)
RDS(ON)
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VSD

10V
6V

140

V(BR)DSS
IGSS

(Ta = 25C)

180

Test Conditions

Re (yfs) (S)

ID VDS Characteristics

Symbol

External Dimensions TO220S

( Ta=25C)
Ratings
typ

10.0 0.5
8.60.3

Unit
V
V
A
A
W
C
C

+0.3

Symbol
Ratings
VDSS
60
+20, 10
VGSS
60
ID
180
ID(pulse)
PD
60(Tc=25C)
Tch
150
Tstg
40 to +150
PW 100s, duty 1%

3.0 0.5

Absolute Maximum Ratings (Ta=25C)

100

40

50

100 200

Surface-mount MOS FET Array SDK06

RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD

ID VDS Characteristics

52

1.0
1.0

57
1.0
100
2.5

1.8
0.2
0.25
200
120
20

VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 1A
VDD 12V
RL = 12
VGS = 5V
RG1 = 50, RG2 = 10k

0.25
0.3

2.0
7.4
3.3
4.2
1.0

ISD = 1A, VGS = 0V

V
A
A
V
S

pF
pF
pF
s
s
s
s
V

1.5

16

0.3

a
b

+0.15
0.05

Pin 1

19.56

a) Part No.
b) Lot No.
(Unit: mm)

0.8
VGS = 4V

VDS = 10V

10

Ta = 150C

VGS = 5V
VGS = 10V

0.6

3
2

RDS (ON) ()

ID (A)

0.1

VGS = 3V

10

12

0.01

14

0.2

ID (A)

Re (yfs) I D Characteristics

0.5

I DR VSD Characteristics
10

10
ID = 1A

VDS = 10V

Re (yfs) (S)

VGS = 4V
typ.

0.4

0.3
VGS = 10V
typ.

0.2

Ta = 55C
25C
150C

0.5

0.1

0.2
0.05 0.1

0
50

100

150

0.5

Ta = 150C
75C
25C
55C

0.2

0.4

ID (A)

Tc (C)

(Tc = 25C)

10
ED

1.2

1.4

Equivalent Circuit Diagram

(o

m
10

LI

1.0

0
s

1m

IT

n)

S
D

0.8

10

ID (pulse) max

0.6

VSD (V)

Safe Operating Area (single pulse)

15 16

ID (A)

VGS (V)

R DS (ON) TC Characteristics

RDS (ON) ()

25C

0.4

0
0

VDS (V)

50

75C

55C

Ta = 55C
25C
75C
150C

IDR (A)

ID (A)

20.0max
0.2

20

VGS = 4V

+0.15

0.75 0.05

R DS (ON) I D Characteristics

ID VGS Characteristics

2.540.25

0.890.15

0.25

6.8max

47

3.60.2

ID = 1mA, VGS = 0V
VGS = 20V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 1.0A
VGS = 10V, ID = 1.0A
VGS = 4V, ID = 1.0A

Unit

max

1.40.2

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)

min

1.00.3

Test Conditions

External Dimensions SMD-16A

6.30.2
8.00.5

40
150
55 to +150
*1 PW 100s, duty 1%
*2 VDD = 12V, L = 10mH, unclamped, RG = 10

Symbol

(Ta=25C)
Ratings
typ

4.0max

3 (Tc=25C, 4 circuits operate)

Electrical Characteristics

Unit
V
V
A
A
W
mJ
C
C

9.80.3

Ratings
525
20
3
6

3.00.2

Symbol
VDSS
VGSS
ID
ID (pulse) *1
PT
EAS *2
Tch
Tstg

0 to 0.15

Absolute Maximum Ratings (Ta=25C)

13 14

11 12

10

1
1

0.5
2

0.1
0.5

10

50

VDS (V)

117

Surface-mount MOS FET Array SDK08

ID = 4A
VDD 12V
RL = 3
VGS = 5V
RG = 50

50
80
60
40
1.0

ISD = 6A, VGS = 0V

0.1

Ta = 150C
75C
25C
0C
55C

VGS = 3V
0.01

4
2
0

12

15

0.001

VDS (V)

0.10

25C
0C

6.8max

0.1
0.05 0.1

10

10

ID (A)

(single pulse) (Ta = 25C)

(ID = 4A)

0.20

Ta = 150C

0.10

0.05

500
VDD = 12V constant
RGS = 50
VGS = 5V

75C

0.05

10

RDS (ON) TC Characteristics (typ.) S/W Time W ID Characteristics

(VGS = 4V)

0.15

Ta = 150C
25C
55C

VGS (V)

0.20

RDS (ON) ()

RDS (ON) ()

Ta = 150C
75C
25C
0C
55C

(VDS = 10V)

100

0.2

RDS (ON) I D Characteristics

(VGS = 10V)

0.20

Re (yfs) ID Characteristics

0.6

VGS (V)

RDS (ON) I D Characteristics

0.15

20.0max

(Unit: mm)

Ta = 150C
75C
25C
0C
55C

0.8

Pin 1

a) Part No.
b) Lot No.

0.4

RDS (ON) ()

VDS (V)

ID (A)

ID (A)

VGS = 10V

19.56

(ID = 4A)

1.0

0.2

1.4
1.2

10

+0.15
0.3 0.05

VDS VGS Characteristics (typ.)


(VDS = 10V)

14
12

16

Re (yfs) (S)

ID VGS Characteristics

1.5

2.540.25

+0.15

0.75 0.05

3.60.2

1.8
9.0
0.07
0.09
700
300
90

0.890.15

0.25

1.40.2

1.3
5.0

V
nA
A
V
S

pF
pF
pF
ns
ns
ns
ns
V

100
100
2.3
13.0
0.08
0.1

6.30.2
8.00.5

50

VDS = 10V
f = 1.0MHz
VGS = 0V

20
10

Unit

max

4.0max

min

1.00.3

ID = 100A, VGS = 0V
VGS = 20V
VDS = 50V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 4.0A
VGS = 10V, ID = 4.0A
VGS = 4V, ID = 4.0A

Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD

VGS = 4V

16

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)

(Ta = 25C)

18

Test Conditions

0.15
VGS = 4V

0.10

VGS = 10V

0.05

55C

S/W Time (ns)

ID VDS Characteristics (typ.)

Symbol

External Dimensions SMD-16A

(Ta=25C)
Ratings
typ

0 to 0.15

Ratings
50
20
4.5
9

9.80.3

(Ta=25C)
Unit
V
V
A
A
W
4 (Tc=25C, 4 circuits operate)
80
mJ
C
150
C
55 to +150
*1 PW 100s, duty 1%
*2 VDD = 12V, L = 10mH, unclamped, RG = 50
Symbol
VDSS
VGSS
ID
ID (pulse) *1
PT
EAS *2
Tch
Tstg

3.00.2

Electrical Characteristics

Absolute Maximum Ratings

100

tr
t d (off)
t d (on)
tf

10

10

12

ID (A)

10

0
60 50

12

ID (A)

50

100

5
0.1

150

0.5

Tc (C)

10

ID (A)

Equivalent Circuit Diagram


Capacitance VDS Characteristics ISD VSD Characteristics (typ.)
(Ta = 25C)

5000

1000

Coss

100

Crss

4 circuits operate
3 circuits operate
2 circuits operate
1 circuits operate

P T (W)

Ciss

Ta = 150C
75C
25C
0C
55C

4
3
2

15

0
1

10

VDS (V)

100

0.3

0.6

0.9

VSD (V)

1.2

1.5

50

100

Ta (C)

150

16

13

10

118

ISD (A)

Capacitance (pF)

VGS = 0V
f = 1MHz

5
0.1

PT Ta Characteristics

14

11

12

10

Surface-mount MOS FET Array SDK09

ID VDS Characteristics

1.0
5.0
0.15
0.2
400
130
30

VDS=10V
f=1.0MHz
VGS=0V
ID=4A
VDD=12V
RL=3
VGS=5V
RG=50

0.2
0.25

100
300
250
200
1.0

ISD=6A, VGS=0V

Pin 1

19.56

a) Part No.
b) Lot No.
(Unit: mm)

R DS (ON) I D Characteristics
0.30
0.25

VGS=4.5V

RDS (ON) ()

VGS=4V

ID (A)

6
Ta=55C
25C
75C
150C

4
2

0.15
VGS=10V

0.10

1.0

2.0

3.0

4.0

VGS (V)

10

1.0

1.2

I DR VSD Characteristics

50

0.45

ID (A)

Re (yfs) I D Characteristics

R DS (ON) TC Characteristics
ID=4A

0.20

0.05

VDS (V)

0.40

20.0max

VDS=10V

0.2

12

+0.15
0.3 0.05

10
VGS=10V

ID (A)

16

pF
pF
pF
ns
ns
ns
ns
V

ID VGS Characteristics

16

+0.15

0.75 0.05

1.5

2.540.25

0.890.15

0.25

6.8max

V
A
A
V
S

5
100
2.0

3.60.2

Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD

120

1.40.2

ID=100A, VGS=0V
VGS=20V
VDS=120V, VGS=0V
VDS=10V, ID=250A
VDS=10V, ID=4A
VGS=10V, ID=4A
VGS=4V, ID=4A

Unit

max

6.30.2
8.00.5

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)

min

4.0max

Test Conditions

External Dimensions SMD-16A

1.00.3

Symbol

RDS (ON)

*1 PW 100s, duty 1%
*2 VDD = 12V, L = 10mH, unclamped, RG = 50

(Ta=25C)
Ratings
typ

9.80.3

Unit
V
V
A
A
W
mJ
C
C

3.00.2

Symbol
Ratings
120
VDSS
20
VGSS
6
ID
10
ID (pulse) *1
3 (Tc=25C, 4 circuits operate)
PT
EAS *2
80
Tch
150
Tstg
55 to +150

0 to 0.15

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

6
VGS=0V

VGS=4V

VGS=10V

0.20

Ta=55C
25C
75C
150C

1
0.5

0.10

0.1
0.05 0.1

0
50

50

100

150

0.5

3
2
1
0

10

0.2

0.4

ID (A)

Tc (C)

(Ta = 25C)

20

1000
500

ID (pulse) max

10

Ciss

ID (A)

Coss

Equivalent Circuit Diagram

0
s

1m

10

15

RDS (on) LIMITED

100

16

13

14

11

12

10

10

0m

50

0.8

10

ID (DC) max

VGS =0V
f=1MHz

0.6

VSD (V)

Safe Operating Area (single pulse)

Capacitance VDS Characteristics

Capacitance (pF)

Ta=150C
75C
25C
55C

IDR (A)

Re (yfs) (S)

RDS (ON) ()

10
0.30

0.5
2

Crss

0.1

10
0

10

20

30

VDS (V)

40

50

10

50

100 200

VDS (V)

119

MOS FET Array SLA5027

j-c

VISO
Tch
Tstg

(Fin to lead terminal) AC1000

mJ
C/W
Vrms
C
C

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)

ID = 100A, VGS = 0V
VGS = 20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 8A
VGS = 4V, ID = 8A

Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD

150
55 to +150
*1 PW 250s, duty 1%
*2 VDD = 30V, L = 10mH, unclamped, RG = 50

min

Unit

max

60

1.0
6.0

1.5
12.0
0.07
1100
500
170

VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 8A
VDD 30V
RL = 3.75
VGS = 5V
RG = 50

0.08

50
250
250
180
1.0

ISD = 10A, VGS = 0V

V
A
A
V
S

pF
pF
pF
ns
ns
ns
ns
V

100
100
2.0

1.5

Ellipse 3.20.15 3.8

31.00.2
3.20.15

24.40.2

4.80.2
1.70.1

0.2

16.4

Lead plate thickness


resins 0.8 max

250
2.08

Test Conditions

8.5max

EAS*2

Symbol

External Dimensions SLA 12pin (LF800)

16.00.2

60 (Tc=25C,4 circuits operate)

(Ta=25C)
Ratings
typ

13.00.2

5 (Ta=25C, 4 circuits operate)

PT

Unit
V
V
A
A
W
W

9.90.2

Ratings
60
20
12
48

a
b

2.7

Symbol
VDSS
VGSS
ID
ID (pulse)*1

9.5min (10.4)

Electrical Characteristics

Absolute Maximum Ratings (Ta=25C)

12

Pin 1
+0.2
0.1

0.85

1.20.15

0.55

1.450.15

2.20.7

+0.2
0.1

11P2.540.7 =27.941.0
31.5 max

1 2 3 4 5 6 7 8 9 10 11 12

a) Part No.
b) Lot No.
(Unit: mm)

ID VDS Characteristics

ID VGS Characteristics

10

R DS (ON) I D Characteristics
0.1

12
VDS = 10V

10

VGS = 4V

4V
5V
10V

RDS (on) ()

ID (A)

ID (A)

6
VGS = 3V

Ta = 150C
75C
25C
55C

4
2

0.05

VGS = 10V

VDS (V)

0
0.1

VGS (V)

Re (yfs) I D Characteristics

R DS (ON) TC Characteristics

20

I DR VSD Characteristics

30

0.12

10

ID (A)

20
VDS = 10V

VGS = 4V

VGS = 0V

10

0.10

VGS = 10V

0.06

0.02
50

50

100

10

IDR (A)

Re (yfs) (S)

RDS (ON) ()

2
0.4

150

Capacitance VDS Characteristics

As

VDS (V)

10

ID (A)

s
1

50

0m

Capacitance (pF)

5m
1m
s
10

10

Equivalent Circuit Diagram

Crss

50

1.2

Coss

10

ID (DC) max

10

500

0.8

VSD (V)

(Ta = 25C)

Ciss

0.4

0.

VGS = 0V
f = 1MHz

ID (pulse) max
S
(o
n)
LI
su
me
M
IT
dV
ED
GS
=4
V li
ne

50

100

0.1

20

Safe Operating Area (single pulse)

2000

120

10

ID (A)

Tc (C)

1000

1
0.5

0.5
0.5

10

VDS (V)

50 100

11

12

MOS FET Array SLA5098 (under development)

PT
Tch
Tstg

Tc=25C,
90 ( All
circuits operate )

150
55 to +150

C
C

* PW 100s, duty 1%

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD

ID = 100A, VGS = 0V
VGS = 15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 10A
VGS = 10V, ID = 10A

t rr

VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 10A
VDD = 14V
RL = 1.4
VGS = 10V
RG = 50
ISD = 10A, VGS = 0V
ISD = 10A, VGS = 0V
di/dt = 100A/s

min

max

40
10
100
1.5
10

2.5
17
1450
420
260
40
40
200
100
0.85
45

1.2

Unit

V
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V

Ellipse 3.20.1 3.8

31.00.2
3.20.1

24.40.2

4.80.2
1.70.1

0.2

16.4

Lead plate thickness


resins 0.8 max

Without heatsink, Ta=25C,


All circuits operate

Test Conditions

External Dimensions STA4 (LF412)

9.90.2

mJ
A

Symbol

(Ta=25C)
Ratings
typ

16.00.2

To be defined
To be defined

Electrical Characteristics

13.00.2

Unit
V
V
A
A

8.5max

5(

Ratings
40
20
20
40

a
b

2.7

Symbol
VDSS
VGSS
ID
ID (pulse)*
EAS
IAS

9.5min (10.4)

Absolute Maximum Ratings (Ta=25C)

15

Pin 1
+0.2

+0.2

0.65 0.1

1.20.15

2.20.7

0.55 0.1

+0.2

1.15 0.1
14P2.030.4 = 28.420.8
31.5 max

a) Part No.
b) Lot No.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

(Unit: mm)

ns

Equivalent Circuit Diagram

14

10

15

13

12

11

121

MOS FET Array SMA5113

35 (Tc=25C, All circuits operate, Fin)

Unit
V
V
A
A
W
W

130
7

mJ
A

4 (Ta=25C, All circuits operate, No Fin)

PT
EAS *2
IAS
j-a

31.2

Junction - Ambientare,
Ta=25C, All circuits operate

C/W

j-c

3.57

Junction - Case,
Ta=25C, All circuits operate

C/W

Electrical Characteristics
Symbol

Test Conditions

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)

ID = 100A, VGS = 0V
VGS = 30V
VDS = 450V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 20V, ID = 3.5A
VGS = 10V, ID = 3.5A

Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD

Tch
Tstg

C
150
C
55 to +150
*1 PW 100s, duty 1%
*2 VDD = 30V, L = 5mH, IL = 7A, unclamped,
RG = 50

Unit

max

450

V
nA
A
V
S

pF
pF
pF
ns
ns
ns
ns
V

100
100
4.0

2.0
3.5

5.0
0.84
720
150
65

VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 3.5A
VDD 200V
RL = 57
VGS = 10V
RG = 50

1.1

25
40
70
50
1.0

ISD = 7A, VGS = 0V

1.5

ID VGS Characteristics

4.00.2
31.00.2

5V

+0.2

1.20.1

31.5 max
(Including both-side resin burr)

1 2 3 4 5 6 7 8 9 10 11 12

a) Part No.
b) Lot No.

VGS = 10V

VDS = 20V

15

20

1.0

0.5

Ta = 55C
25C
150C

10

+0.2

0.55 0.1

RDS (ON) ID Characteristics

VGS = 4.5V

1.210.15
1.460.15
0.85 0.1

RDS (ON) ()

ID (A)

b
a

1.5

5.5V

10V

2.50.2

30

11 P2.540.1=27.94

ID (A)

min

External Dimensions SMA (LF1000)

(Unit: mm)

ID VDS Characteristics

(Ta=25C)
Ratings
typ

10.20.2

Ratings
450
30
7
28

2.4

Symbol
VDSS
VGSS
ID
ID (pulse) *1

(10.4)

Absolute Maximum Ratings (Ta=25C)

VDS (V)

10

VGS (V)

RDS (ON) TC Characteristics

Re (yfs) ID Characteristics

2.5

IDR VSD Characteristics

100

7
VDS = 20V

VGS = 10V
ID = 3.5A

VGS = 0V

50

2.0

ID (A)

1.0

IDR (A)

Re (yfs) (S)

RDS (ON) ()

5
1.5

Ta = 55C
25C
150C

10

4
3
2

0.5

1
2
0.05 0.1

0
50

50

100

150

0.5

Tc (C)

0.2

0.4

(Ta = 25C)

50
Ciss

0.6

0.8

1.0

VSD (V)

Safe Operating Area (single pulse)

1000

Equivalent Circuit Diagram

ID (pulse) max

10

500
VGS = 0V
f = 1MHz

100

ED
IT
IM
)L

10 ID (DC) max

Coss

(o

0
s

1m

ID (A)

Capacitance (pF)

ID (A)

Capacitance VDS Characteristics

10

RD

10

10

0m

11

0.5
50

Crss

0.1
0.05

20
0

10

20

30

VDS (V)

122

40

50

10

50

VDS (V)

100

500

12

MOS FET Array STA508A

ID VDS Characteristics

VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 4A
VDD 12V
RL = 3
VGS = 5V
RG = 50
ISD = 6A, VGS = 0V

0.2
0.25

1.5

ID VGS Characteristics

16

0.5

C1.5

1 2 3 4 5 6 7 8 9 10
S G D G D G D G D S

a) Part No.
b) Lot No.
(Unit: mm)

R DS (ON) I D Characteristics
0.30
0.25

VGS = 4.5V

RDS (ON) ()

VGS = 4V

ID (A)

6
Ta = 55C
25C
75C
150C

4
2

0.15
VGS = 10V

0.10

1.0

2.0

3.0

4.0

VGS (V)

10

1.0

1.2

I DR VSD Characteristics

50

0.45

ID (A)

Re (yfs) I D Characteristics

R DS (ON) TC Characteristics
ID = 4A

0.20

0.05

VDS (V)

0.40

0.3

0.05

VDS = 10V

0.3

9 2.54=22.86

12

(2.54)

0.15

0.5

10
VGS = 10V

ID (A)

0.25

1.0

0.2

0.15
0.2
400
130
30
100
300
250
200
1.0

0.2

1.0
5.0

b
a

4.0

5
100
2.0

0.2

0.15

Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD

V
A
A
V
S

pF
pF
pF
ns
ns
ns
ns
V

1.2

RDS (ON)

25.25

120

0.2

ID = 100A, VGS = 0V
VGS = 20V
VDS = 120V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 4.0A
VGS = 10V, ID = 4.0A
VGS = 4V, ID = 4.0A

Unit

max

9.0

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)

min

0.2

Test Conditions

0.2

Symbol

External Dimensions STA4 (LF412)

0.5

4 (Ta = 25C)
20 (Tc = 25C)
EAS *2
80
mJ
Tch
C
150
Tstg
C
55 to +150
*1 PW 100s, duty 1%
*2 VDD = 12V, L = 10mH, unclamped, RG = 50
PT

(Ta=25C)
Ratings
typ

2.3

Electrical Characteristics

(Ta=25C)
Unit
V
V
A
A
W
W

11.3

Ratings
120
20
6
10

0.5

Symbol
VDSS
VGSS
ID
ID (pulse)*1

3.5

Absolute Maximum Ratings

6
VGS = 0V

VGS = 4V

VGS = 10V

0.20

Ta = 55C
25C
75C
150C

1
0.5

0.10

0.1
0.05 0.1

0
50

50

100

150

0.5

Tc (C)

3
2
1
0

10

0.2

0.4

ID (A)

(Ta = 25C)

20

1000
500

ID (pulse) max

10

Ciss

ID (A)

Coss

50

Equivalent Circuit Diagram

0
s

1m

10

RDS (on) LIMITED

100

0.8

10

ID (DC) max

VGS = 0V
f = 1MHz

0.6

VSD (V)

Safe Operating Area (single pulse)

Capacitance VDS Characteristics

Capacitance (pF)

Ta = 150C
75C
25C
55C

IDR (A)

Re (yfs) (S)

RDS (ON) ()

10
0.30

10

0m

0.5

10

Crss

0.1

10
0

10

20

30

VDS (V)

40

50

10

50

100 200

VDS (V)

123

MOS FET Array STA509A

ID VDS Characteristics

ID = 1A
VDD 12V
RL = 12
VGS = 5V
RG1 = 50, RG2 = 10
ISD = 6A, VGS = 0V

1.5

0.2

0.3

0.3

0.05

9 2.54=22.86

0.5

C1.5

1 2 3 4 5 6 7 8 9 10
S G D G D G D G D S

a) Part No.
b) Lot No.
(Unit: mm)

0.8

20

VGS = 4V

(2.54)

0.15

0.5

R DS (ON) I D Characteristics

ID VGS Characteristics

0.25

1.0

VGS = 4V

VDS = 10V

10

Ta = 150C

VGS = 5V
VGS = 10V

0.6

RDS (ON) ()

ID (A)

3
2

0.1

VGS = 3V

Ta = 55C
25C
75C
150C

10

12

0.01

14

I DR VSD Characteristics
10

10
ID = 1A

VDS = 10V

Re (yfs) (S)

VGS = 4V
typ.

0.4

0.3
VGS = 10V
typ.

0.2

Ta = 55C
25C
150C

0.5

0.1

0.2
0.05 0.1

0
50

100

150

0.5

Ta = 150C
75C
25C
55C

0.2

0.4

ID (A)

Tc (C)

(Tc = 25C)

10
ED

1.4

Equivalent Circuit Diagram

(o

ID (A)

1.2

10

LI

1.0

0
s

1m

IT

n)

S
D

0.8

10

ID (pulse) max

0.6

VSD (V)

Safe Operating Area (single pulse)

1
2

0.5

0.1
0.5

VDS (V)

124

ID (A)

Re (yfs) I D Characteristics

0.5

55C

VGS (V)

R DS (ON) TC Characteristics

RDS (ON) ()

25C

0.4

0
0

VDS (V)

50

75C

0.2

IDR (A)

ID (A)

0.2

VDS = 10V
f = 1.0MHz
VGS = 0V

0.25
0.3

b
a

0.2

0.2
0.25
200
120
20
2.0
7.4
3.3
4.2
1.0

V
A
A
V
S

pF
pF
pF
s
s
s
s
V

4.0

1.0
1.0

0.2

25.25

57
1.0
100
2.5

0.15

Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD

52

1.2

RDS (ON)

47

9.0

ID = 1mA, VGS = 0V
VGS = 20V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 1.0A
VGS = 10V, ID = 1.0A
VGS = 4V, ID = 1.0A

Unit

max

0.2

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)

min

0.2

Test Conditions

External Dimensions STA

0.5

4 (Ta = 25C)
20 (Tc = 25C)
EAS *2
40
mJ
Tch
C
150
Tstg
C
55 to +150
*1 PW 100s, duty 1%
*2 VDD = 12V, L = 10mH, unclamped, RG = 10
PT

Symbol

(Ta=25C)
Ratings
typ

2.3

Electrical Characteristics

Unit
V
V
A
A
W
W

11.3

Ratings
525
20
3
6

0.5

Symbol
VDSS
VGSS
ID
ID (pulse) *1

3.5

Absolute Maximum Ratings (Ta=25C)

10

50

10

Thyristor with built-in reverse diode for HID lamp ignition TFC561D

External Dimensions (unit: mm)


4.440.2

(1.4)

1.30.2

11.30.5

8.60.3

10.20.3

+0.3

Repetitive peak off-state voltage: VDRM=600V


Repetitive peak surge on-state current: ITRM=430A
Critical rate-of-rise of on-state current: di/dt=1200A/s
Gate trigger current: I GT=20mA max
With built-in reverse diode

10.0 0.5

Features

1.20.2

2.590.2
0.5

1.270.2
+0.2

Parameter

Symbol

0.760.1

Ratings

Unit

Conditions

VDRM

600

Repetitive surge peak


on-state current

ITRM

430

Critical rate-of-rise of on-state current

di/dt

1200

A/s

Peak forward gate current

IFGM

2.0

50Hz, duty

10%

50Hz, duty

10%

50Hz

PGM

5.0

Average gate power loss

PG (AV)

0.5

Peak reverse gate voltage

VRGM

Diode repetitive peak surge


forward current

I FRM

240

Junction temperature

Tj

40 to +125

Storage temperature

Tstg

40 to +125

2.540.5

Tj=40 to +125C,

Repetitive peak off-state voltage

Peak gate power loss

11.0

0.86 0.1

Absolute Maximum Ratings

2.540.5

RGK=1k
VD

430V, 100kcycle,

0.40.1

(1). Cathode (K)


(2). Anode (A)
(3). Gate (G)

(1) (2) (3)

Wp=1.3s, Ta=125C

VD

Weight: Approx. 1.5g

Measurement circuit

430V, 100kcycle,

Wp=1.3s, Ta=125C

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to

VD

Sample

G1

cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles.

G2

Electrical Characteristics

(Tj=25C)

Ratings

Symbol
min

typ

Unit

Conditions

max
IT=10A

On-state voltage

VTM

1.4

Gate trigger voltage

VGT

1.5

VD=6V, RL=10

Gate trigger current

IGT

20

mA

VD=6V, RL=10

Gate non-trigger voltage

VGD

Holding current

IH

0.1
2

10.0

VD=480V, Tj=125C

mA

RGK=1k, Tj=25C

Off-state current (1)

IDRM (1)

100

VD=VDRM, RGK=1k, Tj=25C

Off-state current (2)

IDRM (2)

mA

VD=VDRM, RGK=1k, Tj=125C

Thermal resistance

Rth

4.0

C/W

Diode forward voltage

VF

1.4

Junction to case
IF=10A

Current waveform (1cycle)


(Ta=25C)

100A/div

Parameter

2s/div

125

Thyristor with built-in reverse diode for HID lamp ignition TFC562D

External Dimensions (unit: mm)

Features

4.440.2
(1.4)
9.10.3
(2.69) (1.8)

+0.2

1.34 0.1

+0.2

0.860.1

Symbol

Ratings

Unit

Repetitive peak off-state voltage

VDRM

600

Repetitive surge peak


on-state current

ITRM

600

Critical rate-of-rise of on-state current

di/dt

1600

A/s

Peak forward gate current

IFGM

50Hz, duty 10%

Peak gate power loss

PGM

50Hz, duty 10%

Average gate power loss

PG (AV)

0.5

Peak reverse gate voltage

VRGM

50Hz

Diode repetitive peak surge


forward current

I FRM

460

Ta = 100C, VD 430V,
WP = 1.05s,
100kcycle*,
See the examples of current waveforms

Junction temperature

Tj

40 to +125

Storage temperature

Tstg

40 to +125

Conditions
Tj = 40 to +125C,

0.760.1

RGK = 1k
Ta = 100C, VD 430V,
WP = 1.05s, IG = 70mA,
dig/dt = 0.5A/s,
100kcycle*,
See the examples of current waveforms

0.40.1
2.540.1
(Root dimension)

2.540.1
(Root dimension)
10.20.3

Current waveform (1cycle)

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to

(Ta=100C)

cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles.

Electrical Characteristics
min

typ

max

Unit

Conditions

On-state voltage

VTM

1.4

IT = 10A

Gate trigger voltage

VGT

1.5

VD = 6V, RL = 10

Gate trigger current

IGT (1)

20

mA

VD = 6V, RL = 10

Gate non-trigger voltage


Holding current

126

Symbol

(Tj=25C)

Ratings

VGD

0.1

IH

VD = 480V, Tj = 125C

mA

RGK = 1k, Tj = 25C

Off-state current (1)

IDRM (1)

10

VD = VDRM, RGK = 1k, Tj = 25C

Off-state current (2)

IDRM (2)

mA

VD = VDRM, RGK = 1k, Tj = 125C

Thermal resistance

Rth

4.0

C/W

Junction to case, With infinite heatsink

Diode forward voltage

VF

1.4

IF = 10A

V: 200A/div

Parameter

2.60.2
(Root dimension)

11.00.5

Parameter

a
b

Absolute Maximum Ratings

1.30.2

+0.3

(0.45)

(5)

10.5 0.5

Repetitive peak off-state voltage: VDRM=600V


Repetitive peak surge on-state current: ITRM=600A
Critical rate-of-rise of on-state current: di/dt=1600A/s
Gate trigger current: I GT=20mA max
With built-in reverse diode

H: 2s/div
* A single cycle operation consists of a continuous impression of 50
rounds with period T = 10ms followed by a rest time for the junction
temperature of the element to cool down to 100C (= Ta). Repeat
this cycle operation.

Rectifier Diodes for Alternators


Normal Type
Part No.

Absolute maximum ratings


Tstg
Tj
IF (AV)
IFSM
(A)
(A)
(C)

VRM
(V)

SG-9CNS
SG-9CNR
SG-9LCNS
SG-9LCNR
SG-9LLCNS
SG-9LLCNR
SG-10LS
SG-10LR
SG-10LXS
SG-10LXR
SG-10LLS
SG-10LLR
SG-10LLXS
SG-10LLXR

VF
(V)
max

Electrical Characteristics
IR
VZ
Condition (mA)
(V)
IF (A)
max

Condition
IZ (mA)

200

20

200

40 to +150

1.10

20

0.25

200

30

300

40 to +150

1.10

30

0.25

200

35

350

40 to +150

1.10

35

0.25

200

30

300

40 to +150

1.2

100

0.25

150

35

350

40 to +150

1.05

100

0.25

200

40

400

40 to +150

1.05

100

0.25

150

45

450

40 to +150

1.0

100

0.25

Fig.
No.
1

Zener Type
Part No.

Absolute maximum ratings


Tj
Tstg
IF (AV)
IFSM
(A)
(A)
(C)

VRM
(V)

SG-9CZS
SG-9CZR
SG-9LLCZS
SG-9LLCZR
SG-10LZ23S
SG-10LZ23R
SG-10LLZ23S
SG-10LLZ23R
SG-14LXZS
SG-14LXZR

VF
(V)
max

Electrical Characteristics
IR
VZ
Condition (mA)
(V)
IF (A)
max

Condition
IZ (mA)

Fig.
No.

17

20

200

40 to +200

1.10

20

0.05

233

10

17

35

350

40 to +200

1.10

35

0.05

233

10

17

30

300

40 to +150

1.2

100

0.05

233

10

17

40

400

40 to +150

1.05

100

0.05

233

10

16

35

350

40 to +200

1.15

100

0.05

223

100

External Dimensions (unit: mm)

1.5

1.5

3.10.1

3.10.1

S: 19.01.0
R: 23.01.0

Fig. 2
S: 19.01.0
R: 23.01.0

Fig. 1

1
8.40.2

S type

5.0

Fig. 4

R type

12.84
11.5
1.26

S : 20.5
R : 28.5

(1.5)
(4)

(2)

24.0

2.0

R1.2

)
3.0
4.2
5.0

0.4
1.0

Polarity

Polarity

0.6

4.0
4.7
8max
10max

(30

3.6

1.4

(45

4.4

R type

S type
9.0

0.3

2.5

(5.8)

S type

10.7

13.5
10.0

9.50.2

R type

Polarity

1.2

7.00.2
8.40.2

Fig. 3

50.4

Polarity

1.2

50.4

(R0.5)

S type

R type

127

High-voltage Diodes for Igniters

Part No.

VRM
(kV)

Electrical Characteristics (Ta=25C)

Absolute Maximum Ratings


IRSM
IRSM
IF (AV)
(mA)
(mA)
(A)
Peak value of
50 Hz
Peak value
single shot
half-wave triangular
of 50 Hz
wave
signal
half-wave
with 100s
half-power
average
signal
bandwidth

SHV-01JN

0.5

30

30

SHV-05J

2.5

30

30

SHV-06JN

3.0

30

10

Tj

Tstg

VF
(V)
max

(C)

IR
Vz
(A)
(kV)
VR =VRM IR =100A
IF (mA) max

Condition

1
40 to +150

10

10

Fig.
No.

0.55 to 1.0

2.6 to 5.0

3.2 to 6.0

External Dimensions (unit: mm)


Fig. 2 (SHV-06JN)
2.5
C0.5

0.2

2.50.2

0.5

0.5

Fig. 1 (SHV-05J)

C0.5
27min

27min
50.2

128

27min

6.5

27min

Power Zener Diode

(Ta=25C)

Absolute Maximum Ratings


Part No.

P
(W)

SFPZ-68

SJPZ-K28 *

SJPZ-E18 *

SJPZ-E27 *

SJPZ-E33 *

SJPZ-E36 *

PZ628

Condition

(C)
40 to +150

25.0 to 31.0

10

55 to +150

25.0 to 31.0

10

55 to +150

16.8 to 19.1

10

55 to +150

25.1 to 28.9

10

25

55 to +150

31.0 to 35.0

10

27

55 to +150

34.0 to 38.0

10

20

65*1

40 to +150

25.0 to 31.0

10

50

VDC
(V)

I ZSM
(A)

50
(5ms)

20

20
13
20

1500
(5ms)

IR
Fig.
VR =VDC No.
(A)
IZ (mA) max

VZ (V)
1mA
instantaneous
current

PR
(W)

85
(500s)

Electrical Characteristics

Tj

Tstg

SZ-10N27

22

70*1

55 to +175

24 to 30

10

10

SZ-10N40 *

22

40*1

55 to +175

36 to 40

10

10

SZ-10NN27

22

90*1

55 to +175

24 to 30

10

10

SZ-10NN40 *

22

55*1

55 to +175

36 to 40

10

10

Remarks

Surface-mount
type

Axial type

* 1: IZSM conditions
IRSM
IRSM

Surface-mount
type

10ms

Time

* under development

External Dimensions (unit: mm)

Fig. 1

Fig. 2

4.50.2

2.0min

5.1

Fig. 3

1.35 0.4

+0.4
0.1

1.10.2

1.30.4

1.3 0.05
C2
Cathode marking

0.050.05

+0.1
+0.4

1.30.4

1.50.2

5.0 0.1

1.50.2

Fig. 3

8.50.5
100.3

50.3

2.70.3
7.20.5

(9.75)

15.50.5

100.3

10.0 0.2

13.50.3

56.0 0.7
10.0 0.02

20.3

30.5

2.00.5

1.35 0.4

2.150.2

0.05

2.05 0.2

2.60.2

2.6 0.2

4.5 0.2

129

General-purpose Diodes

Rectifier Diodes
Surface-mount
VRM
(V)

Part No.

SFPM-52

I F (AV)
(A)

I FSM
(A)
Peak value
of 50 Hz
half-wave
signal

Tj
(C)

Tstg
(C)

I R (H)
(mA)

IR
(A)

VF
(V)
max

Condition
I F (A)

VR=VRM
max

VR=VRM Condition
Ta (C)
max

Rth (j-l)
(C/W)

Package

Weight
(g)

0.9

30

1.0

1.0

10

50

100

20

0.072

SFPM-62

1.0

45

0.98

1.0

10

50

100

20

0.072

SFPM-54

0.9

30

1.0

1.0

10

50

100

20

0.072

1.0

45

0.98

1.0

10

50

100

20

0.072

200

40 to +150
400

SFPM-64

Ultra Fast Recovery Rectifier Diodes


Surface-mount
VRM
(V)

Part No.

I F (AV)
(A)

I FSM
(A)
Peak value
of 50 Hz
half-wave
signal

Tj
(C)

Tstg
(C)

I R (H)
(mA)

IR
(A)

VF
(V)
max

Condition
I F (A)

VR=VRM
max

t rr
(ns)

VR=VRM Condition
Ta (C)
max

Condition
I F/IRP (mA)

t rr
(ns)

Condition
I F/IRP (mA)

Rth (j-l)
(C/W)

Package

Weight
(g)

SFPL-52

0.9

25

0.98

1.0

10

150 (Tj)

50

100/100

35

100/200

20

0.072

SFPL-62

1.0

25

0.98

2.0

10

150 (Tj)

50

100/100

35

100/200

20

0.072

MPL-102S

10.0

65

0.98

5.0

100

0.2

150

40

100/100

30

100/200

2.5

1.4

MP2-202S

20.0

110

0.98

10.0

200

0.4

150

50

100/100

35

100/200

2.5

1.4

1.0

25

1.3

1.0

10

0.05

150

50

100/100

30

100/200

20

0.072

IR
(A)

I R (H)
(mA)

200

400

SFPL-64

40 to +150

Schottky Barrier Diodes


Surface-mount
Part No.

VRM
(V)

I F (AV)
(A)

I FSM
(A)
Peak value
of 50 Hz
half-wave
signal

Tj
(C)

Tstg
(C)

VF
(V)
max

Condition
I F (A)

VR=VRM
max

VR=VRM Condition
Ta (C)
max

Rth (j-l)
(C/W)

Package

Weight
(g)

SFPJ-53 *

30

1.0

30

0.45

1.0

1.0

35

150

20

0.072

SFPJ-63

30

2.0

40

0.45

2.0

2.0

70

150

20

0.072

SFPJ-73

30

3.0

50

0.45

3.0

3.0

100

150

20

0.072

SFPB-54

40

1.0

30

0.55

1.0

35

150

20

0.072

SFPB-64

40

2.0

60

0.55

2.0

70

150

20

0.072

SFPE-64

40

2.0

40

0.6

2.0

0.2

70

150

20

0.072

SFPB-74

40

3.0

60

0.5

2.0

100

150

20

0.072

SFPB-56

60

0.7

10

0.62

0.7

30

150

20

0.072

SFPW-56

60

1.5

25

0.7

1.5

70

150

20

0.072

SFPB-66

60

2.0

25

0.69

2.0

55

150

20

0.072

SFPB-76

60

2.0

40

0.62

2.0

70

150

20

0.072

SFPB-59

90

0.7

10

0.81

0.7

30

150

20

0.072

SFPB-69

90

1.5

40

0.81

1.5

55

150

20

0.072

40 to +150

* under development

External Dimensions (unit: mm)

0.7

4.9
0 to 0.25

1.15 0.1
2.29 0.5 2.29 0.5

0.8 0.1

a) Part No.
b) Polarity
c) Lot No.

0.5 0.2

1.1 0.2

1.2max

2.5 0.4

0.05
+0.4

5.1 0.1

1.35 0.4

0.16

2.9

5.5 0.4

2.6 0.2
2.05 0.2

2.0min

5.4
4.1
1.37

0.55 0.1

0.80.1

1.35 0.4

2.30.4

6.5 0.4
5.4 0.4
1.7 0.5

4.5

2: (TO-220S)

0.2

0.55 0.1

1.5 0.2

(Common with heatsink)

1.5 max
N.C

130

5.0

1: (Surface-mount SFP)

Cathode

Anode

General-purpose Diodes - Taping Specifications

Taping Specifications
Taping
Name

1.35 0.4

2.0min

Marking of Part No.,


Lot No., quantity, etc.

1.5

5.5 0.05

4.0

+0.1
0

0.1

2.0 0.5
5.5

13 0.5

1,800 pcs.
65

1.35 0.4

12.0 0.3

2.05 0.2

+ 0.1

0.05 0.05

2.6 0.2

4.5

0.2

0.2

1.1
1.5 0.2

+0.4

5.1 0.1

Packaging
Quantity

Reel

1.75 0.1

Emboss taping

Packaging Dimensions (mm) and Markings

Taping Dimensions (mm)

2.0

per reel

210.8

R1.0
2.6

Pull out direction

4.0 0.1

A suffix "V" is
added to Part
No. for tape
packaging.

141.5

178 2

3.1

(1) The right side of the tape is the cathode viewing in the unfold direction.
(2) The product is inserted into the case with the installed electrode on the lower side.
(3) A leader tape 150 to 200mm long is provided on the unfolding edge.
(4) A space of at least 10 pitches equivalent is provided on either end of the tape.
(5) Taping with reversed diode polarity is available on request (taping name VL).

2.0 0.5

Power Surface-mount - Taping Specifications


Taping
Name

Taping Dimensions (mm)

Packaging Dimensions (mm) and Markings


Part No.

Pull out direction

Materials
Disc: both-face white
corrugated cardboard
Core: foamed styrol

Quantity

VL

Taping name
(type)

Packaging
Quantity

Lot No.

3,000 pcs.
1 3 8

10
1001

3302

130.2

40

60

22

20

11.50.1

per reel

4.90.1

80

(Seal part)

120.1

240.3

14.40.1

40.1

(Bottom dimensions)

21.50.1

20.1

120

10.80.1

(Seal part)

R135

0.1

(Bottom dimensions)

VR

25.51
29.51

0.40.1

2.5

Pull out direction

(Cover tape)

+0.1
1.5 0

1 3 8

10

A suffix "VL" is
added to Part
No. for tape
packaging.

1.75 0.1

35

5.4max

3,000 pcs.

7 0.5

90.5

per reel

20.5

210.8

.5
0

A suffix "VR" is
added to Part
No. for tape
packaging.

.2
0

13
130.5

High-voltage diodes for ignition - Taping Specifications


Taping
Name

Packaging Dimensions (mm) and Markings

Taping Dimensions (mm)

Packaging
Quantity

50.5

Axial taping
Part No.

1.2 max

V1

Lot No.
Quantity
1.5

1.0 max
6 1.0

58 1

6 1.0

25

A suffix "V1" is
added to Part
No. for tape
packaging.

per reel

29
75 1.5

5,000 pcs.

3402

131

General-purpose Diodes - Taping Specifications

Power Zener Surface-mount - Taping Specifications


Taping
Name

Packaging Dimensions (mm) and Markings

Taping Dimensions (mm)

Packaging
Quantity

Pull out direction

VL

750 pcs.
1 3 B

VR

R TYPE

L TYPE

25.51
29.51

0.400.05

10.800.1
8

per reel

20.5

210.8

5
0.

13

.2

132

750 pcs.

90.5

7 0.5

A suffix "VR" is
added to Part
No. for tape
packaging.

1001

3302

40

20

60

80

120

1.500.25

16.000.1

130.2

22

16.000.1

10

R135

Pull out direction

per reel

5.640.1

11.500.1

2.000.1

+0.3

4.000.1

24.000.1

1.500.1

1 3 B

10

A suffix "VL" is
added to Part
No. for tape
packaging.

1.750.1

35

130.5

The label showing the


product name, quantity
and production lot is
attached to the reel.

LEDs
3-1. Uni-Color LED Lamps

..............

134

3-2. Bi-Color LED Lamps

..................

137

3-3. Surface Mount LEDs

..................

138

.....................................

140

3-4. Infrared LEDs

3-5. Ultraviolet LEDs ............................... 141


3-6. Multi-chip Modules

.....................

142

133

General-purpose LEDs

Uni-Color LED Lamps


Absolute Maximum Ratings

mW

GaAsP

A GaInP

mA

30

mA /C

0.45

I FP

mA

VR

Top

Tstg

Deep red

High-intensity red
Red
Amber
Orange
Yellow
Green
Pure green
Red
Amber

5 Round

Orange
Yellow
Green
Pure green
Ultra high-intensity red
Ultra high-intensity orange
Ultra high-intensity pure green
Ultra high-intensity blue
Ultra high-intensity blue
Ultra high-intensity red

Red
Amber
Orange
Green
Pure green
Ultra high-intensity pure green
Ultra high-intensity blue
High-intensity red

4.65.6
Egg-shaped

Ultra high-intensity red

Green
Deep red
Red

4 Round

Amber
Orange
Yellow

GaN

Conditions

120

IF

Emitting color

InGaN

75

I F

Outline

134

GaP

Above 25C

100

70

f=1kHz, tw=100s

5
30 to +80

30 to +85
30 to +100

Part No.

SEL1110R
SEL1110W
SEL1110S
SEL1610W
SEL1610C
SEL1210R
SEL1210S
SEL1810D
SEL1810A
SEL1910D
SEL1910A
SEL1710Y
SEL1710K
SEL1410G
SEL1410E
SEL1510C
SEL1210RM
SEL1210SM
SEL1810DM
SEL1810AM
SEL1910DM
SEL1910AM
SEL1710KM
SEL1410GM
SEL1410EM
SEL1510CM
SELU1210CXM
SELU1910CXM-S
SELU1D10CXM
SELU1E10CXM
SELS1E10CXM-M
SELU1250CM
SEL1250SM
SEL1250RM
SEL1850AM
SEL1850DM
SEL1950KM
SEL1450EKM
SEL1450GM-YG
SEL1550CM
SELU1D50CM
SELU1E50CM
SEL1615C
SELU1253CMKT
SEL1453CEMKT
SEL4110S
SEL4110R
SEL4210S
SEL4210R
SEL4810A
SEL4810D
SEL4910A
SEL4910D
SEL4710K
SEL4710Y

VF
(V)

Lens color
typ

max

2.0

2.5

1.75

2.2

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0

2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0
2.0
2.0
3.3
3.3
3.7
2.0

2.5
2.5
2.5
4.0
4.0
4.2
2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0
3.3
3.3
1.75
2.0
2.0

2.5
4.0
4.0
2.2
2.5
2.5

2.0

2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

Diffused red
Diffused white
Tinted red
Diffused white
Clear
Diffused red
Tinted red
Diffused orange
Tinted orange
Diffused orange
Tinted orange
Diffused yellow
Tinted yellow
Diffused green
Tinted green
Clear
Diffused red
Tinted red
Diffused orange
Tinted orange
Diffused orange
Tinted orange
Tinted yellow
Diffused green
Tinted green
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Tinted green
Diffused green
Clear
Clear
Clear
Clear
Clear
Tinted green
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow

Electro-optical characteristics (Ta=25C)


Peak wavelength Dominant wavelength
IV
p (nm)
p (nm)
(mcd)
Condition
IF (mA)
typ
typ
typ
2.8
5
2.8
625
700
4.5
250
20
642
660
300
26
20
620
630
75
18
10
605
610
37
14
10
590
587
25
22
10
571
570
65
32
20
567
560
84
20
50
559
555
36
20
620
630
75
18
10
605
610
37
19
10
590
587
34
10
65
571
570
30
20
567
560
84
20
50
559
555
20
280
625
635
20
450
589
591
20
2000
530
525
20
600
470
468
20
1000
470
468
20
900
625
635
75
20
620
630
48
90
20
605
610
60
20
96
590
587
190
20
567
560
120
20
72
559
555
20
6000
530
525
20
1850
470
468
20
170
642
660
20
200
625
635
20
140
567
560
2.4
5
625
700
1.7
30
20
620
630
17
20
10
605
610
15
26
10
590
587
16
36
10
571
570
14

Chip
material

Fig. No.

Unit

PD

Contact
mount

Parameter

(Ta=25C)
Ratings
GaA As

GaP

GaA As
GaAsP
GaAsP

GaAsP
GaP
GaP
GaP
GaAsP
GaAsP
GaAsP

GaP
GaP
GaP
A GaInP
A GaInP
InGaN
InGaN
InGaN
A GaInP

GaAsP
GaAsP
GaAsP

GaP
GaP
InGaN
InGaN
GaA As
A GaInP
GaP

5
6

GaP
GaAsP
GaAsP
GaAsP
GaP

General-purpose LEDs

Emitting color

Green
Ultra high-intensity green

Pure green
Deep red
Red

4 Round

Amber
Orange
Yellow
Green
Pure green
Deep red
Red
Amber
Ultra high-intensity orange

Orange
Yellow
Green
Pure green
Blue
Ultra high-intensity
deep red
Ultra high-intensity red

Red
Amber
Ultra high-intensity light amber
Ultra high-intensity orange

Orange

3 Round

Ultra high-intensity yellow

Yellow
Green
Ultra high-intensity green

Deep green
Pure green
Ultra high-intensity pure green
Ultra high-intensity blue

Red
Orange
Yellow
Green
Pure green
Deep red
High-intensity red
Ultra high-intensity deep red

Red

Amber
Ultra high-intensity light amber

Part No.

SEL4410E
SEL4410G
SELU4410CKT-S
SEL4510C
SEL4114S
SEL4114R
SEL4214S
SEL4214R
SEL4814A
SEL4814D
SEL4914A
SEL4914D
SEL4714K
SEL4714Y
SEL4414E
SEL4414G
SEL4514C
SEL6110S
SEL6110R
SEL6210S
SEL6210R
SEL6810A
SEL6810D
SELU6910C-S
SEL6910A
SEL6910D
SEL6710K
SEL6710Y
SEL6410E
SEL6410G
SEL6510C
SEL6510G
SEL6E10C
SELU6614C-S
SELU6614W-S
SELU6214C
SEL6214S
SEL6814A
SELS6B14C
SELU6914C-S
SEL6914A
SEL6914W
SELU6714C
SEL6714K
SEL6714W
SEL6414E
SELU6414G-S
SEL6414E-TG
SEL6514C
SELS6D14C
SELS6E14C-M
SEL6215S
SEL6915A
SEL6715C
SEL6415E
SEL6515C
SEL2110S
SEL2110R
SEL2110W
SEL2610C
SELU2610C-S
SEL2210S
SEL2210R
SEL2210W
SEL2810A
SEL2810D
SELU2B10A-S

Lens color
Tinted green

VF (V)
typ

max

2.0

2.5

2.1
2.0

2.5
2.5

2.0

2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0

2.5

2.0

2.5

1.9

2.5

1.9

2.5

2.0

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0

2.5

4.0

4.8

2.0

2.5

2.0
1.9
1.9
2.
2.0

2.5
2.5
2.5
2.5
2.5

1.9

2.5

2.1

2.5

2.0

2.5

2.0
2.1
2.0
2.0
3.3
3.7
1.9
1.9
2.0
2.0
2.0

2.5
2.5
2.5
2.5
4.0
4.2
2.5
2.5
2.5
2.5
2.5

2.0

2.5

1.75
2.0

2.2
2.5

1.9

2.5

1.9

2.5

2.0

2.5

Diffused green
Clear
Clear
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Clear
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Diffused green
Clear
Clear
Diffused white
Clear
Tinted red
Tinted orange
Clear
Clear
Tinted orange
Diffused white
Clear
Tinted yellow
Diffused white
Tinted green
Diffused green
Tinted green
Clear
Clear
Clear
Tinted red
Tinted orange
Clear
Tinted green
Clear
Tinted red
Diffused red
Diffused white
Clear
Clear
Tinted red
Diffused red
Diffused white
Tinted orange
Diffused orange
Tinted orange

Electro-optical characteristics (Ta=25C)


IV
Peak wavelength Dominant wavelength
(mcd) Condition
p (nm)
p (nm)
typ
typ
typ
IF (mA)
87
20
560
567
34
20
560
562
170
20
555
559
45
3.8
10
700
625
2.8
40
20
630
620
24
20
10
610
605
15
26
10
587
590
11
38
10
570
571
27
69
20
560
567
48
20
26
555
559
3.9
10
700
625
2.6
41
20
630
620
18
22
10
610
605
9.6
20
550
591
589
22
10
587
590
11
37
10
570
571
11
90
20
560
567
30
42
20
555
559
9.6
20
60
430
466
150
20
650
639
90
20
180
635
625
20
18
630
620
10
9.0
610
605
20
120
600
596
20
180
591
589
8.0
10
587
590
5.0
20
60
572
571
66
20
570
571
30
42
20
560
567
30
20
560
562
18
20
558
564
12
20
555
559
300
20
518
525
70
20
468
470
45
20
630
620
60
20
587
590
90
20
570
571
81
20
560
567
44
20
555
559
4
1.8
10
700
625
1.8
60
20
660
642
300
20
650
639
40
15
20
630
620
15
22
10
610
605
9.0
300
20
598
595

Chip
material

Fig. No.

Outline

Contact
mount

Uni-Color LED Lamps

GaP
A GaInP
GaP

GaP
GaAsP
GaAsP
GaAsP

GaP
GaP
GaP
GaP
GaAsP
GaAsP
A GaInP
GaAsP

GaP
GaP
GaP
GaN
A GaInP
A GaInP
GaAsP
GaAsP
A GaInP
A GaInP
GaAsP
A GaInP

10

GaP
GaP
A GaInP
GaP
GaP
InGaN
InGaN
GaAsP
GaAsP
GaP
GaP
GaP

11

GaP
GaA As
A GaInP
12
GaAsP

GaAsP
A GaInP

135

General-purpose LEDs

Emitting color

Orange
Ultra high-intensity yellow
Yellow

Green

Pure green
Ultra high-intensity pure green
Ultra high-intensity blue

3 Round

Blue
Ultra high-intensity red
Red

Amber

Orange

Yellow

Green
Pure green
Red
Amber
Orange
Yellow
Green
Pure green
Ultra high-intensity red
Ultra high-intensity light amber

Inverted-cone
typ for surface
illumination

Green
Deep green
Pure green
High-intensity red
Red
Amber
Orange
Yellow
Green
Pure green
High-intensity red
Ultra high-intensity deep red
Ultra high-intensity red
Red
Ultra high-intensity amber

5mm Pitch lead


rectangular

Amber
Ultra high-intensity light amber
Orange
Ultra high-intensity yellow
Green
Pure green
Blue
Ultra high-intensity red
Red
Amber
Ultra high-intensity light amber
Ultra high-intensity orange

5mm Pitch lead


bow-shaped

Orange
Ultra high-intensity yellow
Yellow
Green
Pure green
Ultra high-intensity blue
Blue

136

Part No.

SEL2910A
SEL2910D
SELU2710C
SEL2710K
SEL2710Y
SEL2410E
SEL2410G
SEL2510C
SEL2510G
SELU2D10C
SELU2E10C
SEL2E10C
SELU2215R-S
SEL2215S
SEL2215R
SEL2815A
SEL2815D
SEL2915A
SEL2915D
SEL2715K
SEL2715Y
SEL2415E
SEL2415G
SEL2515C
SEL1213C
SEL1813A
SEL1913K
SEL1713K
SEL1413E
SEL1513E
SELU6213C-S
SELS6B13W
SEL6413E
SEL6413E-TG
SEL6513C
SEL2613CS-S
SEL2213C
SEL2813A
SEL2913K
SEL2713K
SEL2413E
SEL2413G
SEL2513E
SEL5620C
SELU5620S-S
SELU5220C-S
SEL5220S
SELU5820C-S
SEL5820A
SELU5B20C
SEL5920A
SELU5720C
SEL5420E
SEL5520C
SEL5E20C
SELS5223C
SEL5223S
SEL5823A
SELS5B23C
SELS5923C
SEL5923A
SELU5723C
SEL5723C
SEL5423E
SEL5523C
SELU5E23C
SEL5E23C

Lens color
Tinted orange

VF (V)
typ

max

1.9

2.5

2.1

2.5

2.0

2.5

2.0

2.5

2.0

2.5

3.3
3.3
4.0
2.0

4.0
4.0
4.8
2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
1.75
1.9
1.9
1.9
2.0

2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5

2.0

2.5

2.0
1.75
2.0
2.0
1.9
2.0
1.9
2.0
1.9
2.1
2.0
2.0
4.0
2.0
1.9
1.9
2.0
2.0
1.9
2.1
2.0
2.0
2.0
3.3
4.0

2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.8
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
4.8

Diffused orange
Clear
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Diffused green
Clear
Clear
Clear
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Tinted red
Tinted orange
Tinted light orange
Tinted yellow
Tinted green
Tinted light green
Clear
Diffused white
Tinted green
Tinted green
Clear
Tinted light red
Tinted red
Tinted orange
Tinted orange
Tinted yellow
Tinted green
Diffused green
Tinted green
Clear
Tinted red
Clear
Tinted red
Clear
Tinted orange
Clear
Tinted orange
Clear
Tinted green
Clear
Clear
Clear
Tinted red
Tinted orange
Clear
Clear
Tinted orange
Clear
Clear
Tinted green
Clear
Clear
Clear

Electro-optical characteristics (Ta=25C)


IV
Peak wavelength Dominant wavelength
(mcd) Condition
p (nm)
p (nm)
typ
typ
typ
IF (mA)
16
10
590
587
8.0
20
270
571
572
40
10
571
570
14
77
20
567
560
20
43
20
559
555
8.2
20
1200
530
525
20
400
470
468
20
60
466
430
20
380
624
632
45
20
620
630
38
80
10
605
610
60
81
10
590
587
53
130
10
571
570
110
110
20
567
560
72
20
52
559
555
20
7.0
620
630
20
8.0
605
610
20
8.0
590
587
20
15
571
570
20
12
567
560
20
5.0
559
555
20
30
624
632
20
60
596
600
20
14
567
560
20
6
564
558
20
5.0
559
555
20
20
642
660
20
7.0
620
630
20
8.0
605
610
20
8.0
590
587
20
17
571
570
14
20
567
560
12
20
5.0
559
555
20
100
642
660
20
100
639
650
20
120
624
632
20
20
620
630
20
150
605
611
20
12
605
610
20
120
596
600
20
12
590
587
20
50
571
572
20
20
567
560
20
6.0
559
555
20
10
466
430
20
100
625
635
20
25
620
630
20
35
605
610
20
135
596
600
20
145
589
591
20
35
590
587
20
155
571
572
20
60
571
570
20
40
567
560
20
13
559
555
20
180
470
468
20
20
466
430

Chip
material

Fig. No.

Outline

Contact
mount

Uni-Color LED Lamps

GaAsP
A GaInP
GaP
GaP

12

GaP
InGaN
InGaN
GaN
A GaInP
GaAsP
GaAsP
GaAsP

13

GaP
GaP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
A GaInP
A GaInP
GaP
GaP
GaP
GaA As
GaAsP
GaAsP
GaAsP
GaP

14

15

16

GaP
GaP
GaA As
A GaInP
A GaInP
GaAsP
A GaInP
GaAsP
A GaInP
GaAsP
A GaInP
GaP
GaP
GaN
A GaInP
GaAsP
GaAsP
A GaInP
A GaInP
GaAsP
A GaInP
GaP
GaP
GaP
InGaN
GaN

17

18

General-purpose LEDs

Bi-Color LED Lamps


Absolute Maximum Ratings

mW

GaP

GaAsP

IF

mA

30

I F

mA /C

0.45

I FP

mA

100

VR

Top

30 to +85

Tstg

30 to +100

Outline

Part No.

SML11516C
SML1516W
SML1216C
SML1216W
SML1816W
5 Round

SML19416W
SMLU12E16C
SMLU12E16W
SMLU12D16W
SMLU18D16C
SMLU18D16W-S
SML72420C

3.36
Rectangular

SML78420C
SML79420C
SML72423C
SML72923C
SML78423C

3.36
Bow-shaped

SML79423C
SMLS79723C
SMLU72423C-S
SMLU79423C-S

A GaInP

Also applies to simultaneous lighting


Above 25C
f=1kHz, tw=100s

Emitting color

Conditions

InGaN
120

75

Lens color

Deep red
Clear
Pure green
Deep red
Diffused white
Pure green
Red
Clear
Green
Red
Diffused white
Green
Amber
Diffused white
Green
Orange
Diffused white
Green
Ultra high-intensity red
Clear
Ultra high-intensity blue
Ultra high-intensity red
Diffused white
Ultra high-intensity blue
Ultra high-intensity red
Diffused white
Ultra high-intensity pure green

VF (V)

Electro-optical characteristics (Ta=25C)


Peak wavelength Dominant wavelength
IV
p (nm)
p (nm)
(mcd)
Condition
typ
typ
typ
IF (mA)

Chip
material

typ

max

2.0

2.5

15

20

700

625

GaP

2.0

2.5

50

20

555

559

GaP

2.0

2.5

6.0

20

700

625

GaP

2.0

2.5

20

20

555

559

GaP

1.9

2.5

65

20

630

620

GaAsP

2.0

2.5

90

20

560

567

GaP

1.9

2.5

60

20

630

620

GaAsP

2.0

2.5

60

20

560

567

GaP

1.9

2.5

50

20

610

605

GaAsP

2.0

2.5

60

20

560

567

GaP

1.9

2.5

45

20

587

590

GaAsP

2.0

2.5

60

20

560

567

GaP

2.0

2.5

500

20

632

624

A GaInP

3.3

4.0

400

20

468

470

InGaN

2.0

2.5

250

20

632

624

A GaInP

3.3

4.0

150

20

468

470

InGaN

2.0

2.5

250

20

632

624

A GaInP

3.3

4.0

700

20

525

530

InGaN
A GaInP

2.0

2.5

800

20

611

605

Ultra high-intensity pure green

3.3

4.0

2000

20

525

530

InGaN

Ultra high-intensity amber

2.0

2.5

300

20

611

605

A GaInP

Ultra high-intensity pure green

3.3

4.0

500

20

525

530

InGaN

Red

1.9

2.5

15

20

630

620

AGaAsP

Green

2.0

2.5

20

20

560

567

GaP

Amber

1.9

2.5

10

20

610

605

GaAsP

Green

2.0

2.5

20

20

560

567

GaP

Orange

1.9

2.5

10

20

587

590

GaAsP

Green

2.0

2.5

20

20

560

567

GaP

Red

1.9

2.5

25

20

630

620

GaAsP

Green

2.0

2.5

35

20

560

567

GaP

Red

1.9

2.5

25

20

630

620

GaAsP

Orange

1.9

2.5

25

20

587

590

GaAsP

Amber

1.9

2.5

25

20

610

605

GaAsP

Green

2.0

2.5

35

20

560

567

GaP

Orange

1.9

2.5

25

20

587

590

GaAsP

2.0

2.5

35

20

560

657

GaP

2.0

2.5

150

20

590

590

A GaInP

2.0

2.5

40

20

570

571

GaP

2.0

2.5

120

20

635

625

A GaInP

2.2

2.5

30

20

560

567

A GaInP

2.0

2.5

150

20

590

590

A GaInP

2.2

2.5

30

20

560

567

A GaInP

Ultra high-intensity amber


Clear

Diffused white

Clear

Clear

Clear

Clear

Clear

Clear

Clear
Green
Ultra high-intensity orange
Clear
Yellow
Ultra high-intensity red
Clear
Ultra high-intensity green
Ultra high-intensity orange
Clear
Ultra high-intensity green

Common

Fig. No.

Unit

PD

Contact
mount

Parameter

(Ta=25C)
Ratings
GaA As

Cathode
Cathode
Cathode
Cathode
Cathode
Cathode

19

Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode

20

Cathode
Cathode
Cathode
Cathode
Cathode

21

Cathode
Cathode
Cathode

137

General-purpose LEDs

Surface Mount LEDs


Absolute Maximum Ratings

(Ta=25C)

Parameter

Unit

IF

mA

Ratings
GaA As
A GaInP
30

I F

mA /C

0.45

I FP

mA

70

VR

Top

30 to +85

Tstg

GaP

GaAsP

Conditions

GaN

InGaN

Above 25C
f=1kHz, tw=100s
5
25 to +85

30 to +100

Outline

Emitting color
Red
Amber
Orange

Side view
(flat lens type)

Yellow
Green
Deep green
Pure green
Ultra high-intensity blue
Red
Amber

Side view
(inner lens type)

Orange
Yellow
Green
Deep green
Pure green
Deep red
High-intensity red
Red
Amber
Orange

31.5
(flat lens type)

Yellow
Green
Deep green
Pure green
Ultra high-intensity pure green
Ultra high-intensity blue
Blue
High-intensity red
Ultra high-intensity red
Red
Ultra high-intensity amber

31.5
(inner lens type)

Amber
Ultra high-intensity orange
Orange
Yellow
Green
Deep green
Pure green

138

Part No.

SEC4201C
SEC4801C
SEC4901C
SEC4701C
SEC4401C
SEC4401E-TG
SEC4501C
SECU4E01C
SEC4203C
SEC4803C
SEC4903C
SEC4703C
SEC4403C
SEC4403E-TG
SEC4503C
SEC1101C
SEC1601C
SEC1201C
SEC1801C
SEC1901C
SEC1701C-YG
SEC1401C
SEC1401E-TG
SEC1501C
SECU1D01C
SECU1E01C
SEC1E01C
SEC1603C
SECS1203C
SEC1203C
SECS1803C
SEC1803C
SECS1903C
SEC1903C
SEC1703C
SEC1403C
SEC1403E-TG
SEC1503C

Lens color

VF (V)

Electro-optical characteristics (Ta=25C)


Peak wavelength Dominant wavelength
IV
p (nm)
(mcd)
p (nm)
Condition
IF (mA)
typ
typ
typ

Chip
material

typ

max

Clear

1.9

2.5

10

20

630

620

GaAsP

Clear

1.9

2.5

16

20

610

605

GaAsP

Clear

1.9

2.5

13

20

587

590

GaAsP

Clear

2.0

2.5

25

20

570

571

GaP

Clear

2.0

2.5

22

20

560

567

GaP

Tinted green

2.0

2.5

11

20

558

564

GaP

Clear

2.0

2.5

8.0

20

555

559

GaP

Clear

3.3

4.0

50

20

468

470

InGaN

Clear

1.9

2.5

15

20

630

620

GaAsP

Clear

1.9

2.5

20

20

610

605

GaAsP

Clear

1.9

2.5

15

20

587

590

GaAsP

Clear

2.0

2.5

35

20

570

571

GaP

Clear

2.0

2.5

33

20

560

567

GaP

Tinted green

2.0

2.5

15

20

558

564

GaP

Clear

2.0

2.5

10

20

555

559

GaP

Clear

2.0

2.5

1.5

20

700

625

GaP

Clear

1.7

2.2

25

20

660

642

GaA As

Clear

1.9

2.5

10

20

630

620

GaAsP

Clear

1.9

2.5

16

20

610

605

GaAsP

Clear

1.9

2.5

13

20

587

590

GaAsP

Clear

2.0

2.5

25

20

570

571

GaP

Clear

2.0

2.5

22

20

560

567

GaP

Tinted green

2.0

2.5

11

20

558

564

GaP

Clear

2.0

2.5

8.0

20

555

559

GaP

Clear

3.3

4.0

150

20

525

525

InGaN

Clear

3.3

4.0

50

20

470

468

InGaN

Clear

3.9

4.8

6.0

20

430

466

GaN

Clear

1.7

2.2

35

20

660

642

GaA As

Clear

1.9

2.5

100

20

635

625

A GaInP

Clear

1.9

2.5

15

20

630

620

GaAsP

Clear

1.9

2.5

10

615

607

A GaInP

Clear

1.9

2.5

20

20

610

605

GaAsP

Clear

1.9

2.5

70

20

590

590

A GaInP

Clear

1.9

2.5

15

20

587

590

GaAsP

Clear

2.0

2.5

35

20

570

571

GaP

Clear

2.0

2.5

33

20

560

567

GaP

Tinted green
Clear

2.0

2.5

15

20

558

564

GaP

2.0

2.5

10

20

555

559

GaP

Fig. No.

Uni-Color Surface Mount LEDs

22

23

24

25

General-purpose LEDs

Surface Mount LEDs

Outline

Part No.

SEC2422C
SEC2442C
SEC2462C
32.5
(flat lens type)

SEC2492C
SEC2552C
SEC2592C
SEC2762C-YG
SEC2484C
SEC2554C

32.5
(inner lens type)

SEC2494C
SEC2764C
SEC2774C

Emitting color
Red
Green
Green
Green
High-intensity red
Green
Orange
Green
Pure green
Pure green
Orange
Pure green
High-intensity red
Yellow
Amber
Green
Pure green
Pure green
Orange
Green
High-intensity red
Yellow
Yellow
Yellow

Lens color

Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear

VF (V)

Electro-optical characteristics (Ta=25C)


Peak wavelength Dominant wavelength
IV
p (nm)
p (nm)
(mcd)
Condition
typ
typ
typ
IF (mA)
20
10
620
630

Chip
material

typ
1.9

max
2.5

2.0

2.5

20

20

560

567

GaP

2.0

2.5

20

20

560

567

GaP

2.0

2.5

20

20

560

567

GaP

1.7

2.2

20

20

660

642

GaA As

2.0

2.5

20

20

560

567

GaP

1.9

2.5

10

20

587

590

GaAsP

2.0

2.5

20

20

560

567

GaP

2.0

2.5

5.0

20

555

559

GaP

2.0

2.5

5.0

20

555

559

GaP

1.9

2.5

10

20

587

590

GaAsP

2.0

2.5

5.0

20

555

559

GaP

1.7

2.2

20

20

660

642

GaA As

2.0

2.5

20

20

570

571

GaP

1.9

2.5

20

20

610

605

GaAsP

2.0

2.5

30

20

560

567

GaP

2.0

2.5

10

20

555

559

GaP

2.0

2.5

10

20

555

559

GaP

1.9

2.5

20

20

587

590

GaAsP

2.0

2.5

30

20

560

567

GaP

1.7

2.2

50

20

660

642

GaA As

2.0

2.5

50

20

570

571

GaP

2.0

2.5

50

20

570

571

GaP

2.0

2.5

50

20

570

571

GaP

Fig. No.

Uni-color / Bi-color Surface Mount LEDs with two elements

GaAsP

26

27

139

General-purpose LEDs

Infrared LEDs
Absolute Maximum Ratings
Parameter

Unit

(Ta=25C)
Conditions

Ratings

IF

mA

150

I F

mA /C

1.33

Above 25C

I FP

mA

1000

f=1kHz, tw=10s

VR

Top

30 to +85

Tstg

30 to +100

Part No.

typ

5 Round

3 Round
3 1.5
(inner lens type)
chip

140

SID1010CM
SID1K10CM
SID1010CXM
SID1K10CXM
SID1050CM
SID303C
SID313BP
SID1003BQ
SID307BR
SID1G307C
SID1G313C
SID2010C
SID2K10C
SEC1G03C

Electro-optical characteristics (Ta=25C)


Radiant intensity Ie
Peak wavelength
p (nm)
(mW/sr)
Condition
max
typ
typ

VF (V)

Lens color

Chip
material

Clear

1.3

1.5

130

940

GaAs

Clear

1.3

1.5

200

940

GaAs

Clear

1.3

1.5

80

940

GaAs

Clear

1.3

1.5

110

940

GaAs

Clear

1.3

1.5

250

940

GaAs

Clear

1.3

1.5

80

940

GaAs

Transparent
light purple
Transparent
light navy blue
Transparent
dark navy blue

1.3

1.5

130

940

GaAs

1.3

1.5

180

940

GaAs

1.3

1.5

200

940

GaAs

Clear

1.5

1.8

50

850

GaAs

Clear

1.5

1.8

50

850

GaAs

Clear

1.3

1.5

940

GaAs

Clear

1.3

1.5

14

940

GaAs

Clear

1.5

1.8

850

GaA As

(Constant
voltage)
Vcc=3V,
R=2.2

IF=50mA

Fig. No.

Outline

Contact
mount

Infrared LEDs

28

29

30

31
25

General-purpose LEDs

Ultraviolet LEDs
Absolute Maximum Ratings
Parameter

(Ta=25C)
Ratings

Unit

Conditions

IF

mA

30

I F

mA /C

0.45

I FP

mA

100

f=1kHz, tw=10s

IR

mA

100

Max. rating of built-in Zener diode

Top

30 to +85

Tstg

30 to +100

Above 25C

Ultraviolet Surface Mount LEDs

2.8 3.5

Part No.

SECU1V0AC

typ

max

IV
(mcd)
typ

3.7

4.0

2.2

Lens color

Clear

VF (V)

Peak wavelength

Condition
IF(mA)

p (nm)
typ

20

385

(V)
typ

Condition

Chip
material

Fig. No.

Electro-optical characteristics (Ta=25C)


Outline

4000

100pF, 1.5k

InGaN

32

Electrostatic withstand voltage

141

General-purpose LEDs

Multi-chip LED Module (under development)


Absolute Maximum Ratings
Parameter

Ratings

Conditions
With an infinite heatsink mounted

IF

mA

40

I F

mA /C

0.25

I FP

mA

100

VR

Topr

30 to +85

Tstg

30 to +100

f=1kHz, tw=10s

Colors compliant
with JIS-Z9112

Color temperature [K]


20mA

Total flux [lm]


20mA

Chromaticity x, y
20mA

SEP8WD4001

Cool white

6400

30

0.32, 0.33

SEP8WN4001

Natural white

5000

30

0.34, 0.35

SEP8WE4001

White

4200

30

0.37, 0.37

SEP8WW4001

Warm white

3450

25

0.41, 0.38

SEP8WL4001

Light bulb

2875

25

0.44, 0.41

Part No.

142

(Per element Ta=25C)

Unit

Fig. No.

33

General-purpose LEDs - External Dimensions

Cathode

(1.0)

0.8

Anode

1.0min

Resin burr 0.3max

7.70.5

23.5min
5.70.2

Resin heap 1.5max

5.60.2

0.50.1

1.1max

0.5

(2.54)

5.00.2

Cathode

0.5

Resin heap 1.5max

4.60.2

19.0min 0.8

Fig.6

7.60.2

4.70.2

20.0min 5.00.5

2-0.50.1

5.60.2

(2.54)

Fig.1

0.65max

(Unit: mm)

Fig.2

Resin heap 1.5max


0.40.1

(1.5)

0.40.1

Resin heap 1.5max

Cathode

Resin heap 0.8max

Fig.9
0.80.2
4.00.2

0.65max

5.00.2

(2.54)
Cathode

5.50.5
3.50.1

Resin heap
0.8max

Fig.10

0.8

1.1max

0.5

0.50.1

Resin heap 1.5max

4.00.2

23.0min
4.50.5
(1.6)
2.50.1

Cathode

0.40.1

3.5

(2.54)

5.00.2

Cathode

1.0min

4.4

3.5

0.65max

8.2
(1.0)

(2.54)

19.0min 0.8

0.2

0.8

20.0min 5.5

0.5

0.2

5.6

0.2

0.450.1

Fig.5

23.0min
(1.7)

Cathode

0.40.1

9.40.3

21.0min

1.0min

1.0min

4.4

3.5

3.10.1

Resin heap 0.8max

0.50.1
0.65
max

0.50.1

Resin burr 0.3max

(2.54)

Anode

0.450.1

Fig.4

0.65max

0.450.1

4.8
0.65max

0.50.1

0.50.1

5.00.2

24.5min

2.2

(2.54)

Cathode

1.0min

Resin heap 1.5max

(2.54)

(1.0) 6.90.2

5.00.2

23.0min

1.5

1.1max

4.8

0.65max

0.50.1
1.0min

0.5

0.8

Fig.8
5.60.2

6.5

Cathode

Fig.3

5.00.2

25.5min

2.2

(2.54)
0.50.1

1.0min

4.00.2

Cathode

Fig.7

4.00.2

(1.0) 7.60.2

0.450.1

23.0min

(2.54)

1.0min

5.00.2

5.60.2

Resin heap
0.8max

143

General-purpose LEDs - External Dimensions

(Unit: mm)

2.60.1

25.8min

1.7
(2.54)

3.10.1

(1.3)

0.4

Resin heap
0.8max

0.4

0.1

Resin burr 0.3max


Resin heap 1.5max

0.65max

0.450.1

0.65max

0.450.1

0.40.1

Cathode 1.0min

3.50.1

(2.54)

4.00.2

Cathode

Fig.16

5.5

3.80.1

0.80.2

23.0min
(1.7)
Resin burr
0.3max

4.4

1.0min

3.5

3.10.1

Fig.11

6.00.2

1.0min

5.80.5

23.0min

Resin heap 1.5max

Cathode

Cathode mark
Resin burr 0.3max
Resin heap 0.8max

0.50.1

3.1

3.6

6.00.2

3.60.2

3.9

6.2

0.65max

0.450.1

0.40.1 Cathode

3.30.2

Fig.18

0.5+0.1

4.00.1
(1.3)

(5.0)

3.10.1

0.50.1

Cathode mark
Resin burr 0.3max
Resin heap 0.8max

0.65max

Cathode
3.6

25.4min

4.20.5

23.0min

1.4

0.65max

0.450.1

Resin heap 1.5max

(2.54)

1.55 1.0min

3.8

1.0min

6.2

(2.54)

3.8

0.4

Fig.17

0.65max

(1.3)

1.7

Fig.13

3.50.1

0.50.1

25.8min

(5.0)

Cathode 1.0min

1.4

Fig.12

3.10.1

Cathode mark

Fig.20

1.0min 1.5min

144

Resin burr 0.3max


Resin heap 0.8max

5.00.2

Resin burr 0.3max


Resin heap 1.5max
1.2
0.8

20.0min

(2.54) (2.54)

6.2

3.50.1

0.65max

Cathode

0.40.1 0.450.1

(2.54)

0.80.2

4.0

0.2

4.4

(1.7) 2.50.1

0.65max

Resin heap 1.5max

4.5

10.60.5
1.0 7.60.2

3.9

6.00.2

23.0min

3 0.50.1

0.8

1.1max

0.50.1
1.0min

3.5

0.5

3.6

Resin burr 0.3max


Resin heap 1.5max

3.3

Fig.15

2.0

0.50.1

0.5

(2.54)
0.5

1.0min 1.5min 17.0min


0.1

0.65max

(1.0)
4.90.2

Cathode 19.0min 0.8

Fig.19

5.80.2

0.5+0.1

20.0min 5.00.5

(2.54) (2.54)

5.60.2

5.80.2

Fig.14

General-purpose LEDs - External Dimensions

(Unit: mm)

5.80.5
3.9

2.5
1.5

1.0

0.9

1.0

1.5

2.0

3.0

3.60.2

Resin burr 0.3max


Resin heap 1.5max

Anode
3.10.2

0.50.1

0.65max

0.50.1

6.2
3.6

1.40.1
Cathode
(0.5)
0.9
0.60.1
mark
Cathode

Fig.26

(2.54) (2.54)

1.0min 1.5min 20.0min

6.00.2

Fig.21

Resin
B

P.C.B.

Fig.22 SEC4001
P.C.B.

Cathode mark
1.0

Cathode

Resin

MAX 0.1
1.40.1
Cathode
(0.5)
0.9
0.60.1
mark
Cathode

1.4

4-R0.35

1.0

1.5

(0.5)

2.0

3.0

0.9

1.5

0.9

1.0

(1.6)

2.5
1.5

(0.6)

2.0
1.5

3.0

2.5

Fig.27

Anode

0.1

Electrode burr

Anode

Lens
0.8

Resin

P.C.B.

1.8

0.1

0.9

(0.5)

Electrode burr
MAX 0.1
0.45

1.6

2.0
1.7
1.0

2.53

3.0

Cathode

1.3

0.6

1.5

1.4

Cathode
mark

Fig.28
5.60.2

1.0min

(1.0)

23.0min

5.00.2

Fig.23 SEC4003

Cathode

Anode
0.50.1

Fig.24
1.5

1.4

Cathode
mark

0.9

(0.5)

1.3

Dimension A (mm)
SID1010CM
7.60.2
SID1K10CM
SID1010CXM 6.90.2
SID1K10CXM

Resin burr 0.3max


Resin heap 1.5max

1.6

1.5

2.0

3.0

0.6

Cathode

0.65max

P.C.B.

0.50.1

Lens

(2.54)

Resin

0.50.1

1.03

P.C.B.
Resin

Anode

1.4
0.9

Cathode
(0.5)

Anode

1.3
(2.54)

Cathode
mark

Lens

Resin

0.50.1

Cathode

1.6

1.0

1.7

2.0

3.0

0.6

1.5

21.0min

9.40.3

5.00.2

Fig.25

1.0min

0.65
max

0.50.1

0.50.1

Fig.29

Resin burr 0.3max


Resin heap 0.8max

P.C.B.
Anode

145

General-purpose LEDs - External Dimensions

(Unit: mm)

Fig.30

Fig.32
8.50.5

24.0min

2.0min

Anode

Side view
3.5
3.2
(2.7)

1.4
0.2

2.8
(2.4)

Cathode

1.1max
0.85+0.1

0.60.1

0.60.1

(2.54)

4.80.2

5.6

Surface

(0.8)

Resin burr 0.3max


Resin heap 1.5max

0.60.1

Cathode Mark

Side view

Dimension A (mm)
SID303C

3.00.5

SID313BP
SID1003BQ
SID307BR
SID1G307C

3.60.5

Reverse Side
0.8

Inner circuit
ZD

4.20.5
2.6

LED
Anode

Anode

Fig.31

Cathode

Fig.33
Resin: color White
13.2

Resin burr 0.3max


Resin heap 1.5max

8.8 0.3
(0.8)

4.4

0.65max

0.40.1

0.450.1

12 11 10 9

16 15 14 13

(2.54)

3.8

0.4

3.5

12.0

10.0

(0.7)

(1.3)

1.7

3.5

4.8

25.8min

5.8

1.0min

0.1

3.10.1

Cathode

Heatsink
1

2.0

Mark

0.3 0.05

146

Cathode

Resin
0.2 0.05
(0.5)

3.00.25

P1.0*3=3.0 0.25

Part Number Index in Alphanumeric Order

Part No.

Description

Page

Part No.

Description

Page

Part No.

Description

Page

2SA1488/A

Power transistor

80

SEC2422C

3 x 2.5 Surface Mount 2-Chip LED

139

SEL1513E

5 Inverted-cone LED for Surface illumination

136

2SA1567

Power transistor

81

SEC2442C

3 x 2.5 Surface Mount 2-Chip LED

139

SEL1550CM

5 Round Narrow-directivity LED, Direct


mount supported

134

2SA1568

Power transistor

82

SEC2462C

3 x 2.5 Surface Mount 2-Chip LED

139

SEL1610C

5 Round Standard LED (With Stopper)

134

2SA1908

Power transistor

83

SEC2484C

3 x 2.5 Surface Mount Inner Lens Type


2-Chip LED

139

SEL1610W

5 Round Standard LED (With Stopper)

134

2SB1622

Power transistor

84

SEC2492C

3 x 2.5 Surface Mount 2-Chip LED

139

SEL1615C

5 Round Narrow-directivity LED

134

2SC3852

Power transistor

85

SEC2494C

3 x 2.5 Surface Mount Inner Lens Type


2-Chip LED

139

SEL1710K

5 Round Standard LED (With Stopper)

134

2SC4024

Power transistor

86

SEC2552C

3 x 2.5 Surface Mount 2-Chip LED

139

SEL1710KM

5 Round Standard LED

134

2SC4065

Power transistor

87

SEC2554C

3 x 2.5 Surface Mount Inner Lens Type


2-Chip LED

139

SEL1710Y

5 Round Standard LED (With Stopper)

134

2SC4153

Power transistor

88

SEC2592C

3 x 2.5 Surface Mount 2-Chip LED

139

SEL1713K

5 Inverted-cone LED for Surface illumination

136

2SD2141

Power transistor

89

SEC2762C-YG 3 x 2.5 Surface Mount 2-Chip LED

139

SEL1810A

5 Round Standard LED (With Stopper)

134

2SD2382

Power transistor

90

SEC2764C

139

SEL1810AM

5 Round Standard LED

134

2SD2633

Power transistor

91

SEC2774C

3 x 2.5 Surface Mount Inner Lens Type


2-Chip LED
3 x 2.5 Surface Mount Inner Lens Type
2-Chip LED

139

SEL1810D

5 Round Standard LED (With Stopper)

134

2SK3710

MOS FET

108

SEC4201C

Side-view Surface Mount LED

138

SEL1810DM

5 Round Standard LED

134

2SK3711

MOS FET

109

SEC4203C

Side-view Surface Mount Inner Lens TypeLED

138

SEL1813A

5 Inverted-cone LED for Surface illumination

136

2SK3724

MOS FET

110

SEC4401C

Side-view Surface Mount LED

138

SEL1850AM

134

2SK3800

MOS FET

111

SEC4401E-TG

Side-view Surface Mount LED

138

SEL1850DM

5 Round Narrow-directivity LED, Direct


mount supported
5 Round Narrow-directivity LED, Direct
mount supported

2SK3801

MOS FET

112

SEC4403C

Side-view Surface Mount Inner Lens TypeLED

138

SEL1910A

5 Round Standard LED (With Stopper)

134

2SK3803

MOS FET

113

SEC4403E-TG

Side-view Surface Mount Inner Lens TypeLED

138

SEL1910AM

5 Round Standard LED

134

2SK3851

MOS FET

114

SEC4501C

Side-view Surface Mount LED

138

SEL1910D

5 Round Standard LED (With Stopper)

134

FKV460S

MOS FET

115

SEC4503C

Side-view Surface Mount Inner Lens TypeLED

138

SEL1910DM

5 Round Standard LED

134

FKV660S

MOS FET

116

SEC4701C

Side-view Surface Mount LED

138

SEL1913K

5 Inverted-cone LED for Surface illumination

136

FP812

Power transistor

92

SEC4703C

Side-view Surface Mount Inner Lens TypeLED

138

SEL1950KM

5 Round Narrow-directivity LED, Direct


mount supported

134

MN611S

Power transistor

93

SEC4801C

Side-view Surface Mount LED

138

SEL2110R

3 Round Type LED

135

MN638S

Power transistor

94

SEC4803C

Side-view Surface Mount Inner Lens TypeLED

138

SEL2110S

3 Round Type LED

135

MP2-202S

Ultrafast Recovery Diode (Surface Mount)

130

SEC4901C

Side-view Surface Mount LED

138

SEL2110W

3 Round Type LED

135

MPL-102S

Ultrafast Recovery Diode (Surface Mount)

130

SEC4903C

Side-view Surface Mount Inner Lens TypeLED

138

SEL2210R

3 Round Type LED

135

PZ628

Power Zener Diode (Surface Mount)

129

SECS1203C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL2210S

3 Round Type LED

135

SDA03

Power transistor Array (Surface Mount)

96

SECS1803C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL2210W

3 Round Type LED

135

SDA04

Power transistor Array (Surface Mount)

97

SECS1903C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL2213C

3 Inverted-cone LED for Surface illumination

136

SDC09

Power transistor Array (Surface Mount)

98

SECU1D01C

3 x 1.5 Surface Mount LED

138

SEL2215R

3 Round Type Narrow-directivity LED

136

SDH04

High-side Power Switch IC

24

SECU1E01C

3 x 1.5 Surface Mount LED

138

SEL2215S

3 Round Type Narrow-directivity LED

136

SDK06

MOS FET Array ( Surface mount )

117

SECU1V0AC

2.8 x 3.5 Ultraviolet Surface Mount LED

141

SEL2410E

3 Round Type LED

136

SDK08

MOS FET Array ( Surface mount )

118

SECU4E01C

Side-view Surface Mount LED

138

SEL2410G

3 Round Type LED

136

SDK09

MOS FET Array ( Surface mount )

119

SEL1110R

5 Round Standard LED (With Stopper)

134

SEL2413E

3 Inverted-cone LED for Surface illumination

136

SEC1101C

3 x 1.5 Surface Mount LED

138

SEL1110S

5 Round Standard LED (With Stopper)

134

SEL2413G

3 Inverted-cone LED for Surface illumination

136

SEC1201C

3 x 1.5 Surface Mount LED

138

SEL1110W

5 Round Standard LED (With Stopper)

134

SEL2415E

3 Round Type Narrow-directivity LED

136

SEC1203C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL1210R

5 Round Standard LED (With Stopper)

134

SEL2415G

3 Round Type Narrow-directivity LED

136

SEC1401C

3 x 1.5 Surface Mount LED

138

SEL1210RM

5 Round Standard LED

134

SEL2510C

3 Round Type LED

136

SEC1401E-TG

3 x 1.5 Surface Mount LED

138

SEL1210S

5 Round Standard LED (With Stopper)

134

SEL2510G

3 Round Type LED

136

SEC1403C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL1210SM

5 Round Standard LED

134

SEL2513E

3 Inverted-cone LED for Surface illumination

136

SEC1403E-TG

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL1213C

5 Inverted-cone LED for Surface illumination

136

SEL2515C

3 Round Type Narrow-directivity LED

136

SEC1501C

3 x 1.5 Surface Mount LED

138

SEL1250RM

134

SEL2610C

3 Round Type LED

135

SEC1503C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL1250SM

5 Round Narrow-directivity LED, Direct


mount supported
5 Round Narrow-directivity LED, Direct
mount supported

134

SEL2613CS-S

3 Inverted-cone LED for Surface illumination

136

SEC1601C

3 x 1.5 Surface Mount LED

138

SEL1410E

5 Round Standard LED (With Stopper)

134

SEL2710K

3 Round Type LED

136

SEC1603C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL1410EM

5 Round Standard LED

134

SEL2710Y

3 Round Type LED

136

SEC1701C-YG 3 x 1.5 Surface Mount LED

138

SEL1410G

5 Round Standard LED (With Stopper)

134

SEL2713K

3 Inverted-cone LED for Surface illumination

136

SEC1703C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL1410GM

5 Round Standard LED

134

SEL2715K

3 Round Type Narrow-directivity LED

136

SEC1801C

3 x 1.5 Surface Mount LED

138

SEL1413E

5 Inverted-cone LED for Surface illumination

136

SEL2715Y

3 Round Type Narrow-directivity LED

136

SEC1803C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL1450EKM

134

SEL2810A

3 Round Type LED

135

SEC1901C

3 x 1.5 Surface Mount LED

138

SEL1450GM-YG

5 Round Narrow-directivity LED, Direct


mount supported
5 Round Narrow-directivity LED, Direct
mount supported

134

SEL2810D

3 Round Type LED

135

SEC1903C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL1453CEMKT

4.6 x 5.6 Egg-shaped LED

134

SEL2813A

3 Inverted-cone LED for Surface illumination

136

SEC1E01C

3 x 1.5 Surface Mount LED

138

SEL1510C

5 Round Standard LED (With Stopper)

134

SEL2815A

3 Round Type Narrow-directivity LED

136

SEC1G03C

3 x 1.5 Infrared Surface Mount Inner Lens Type LED

140

SEL1510CM

5 Round Standard LED

134

SEL2815D

3 Round Type Narrow-directivity LED

136

134

147

Part Number Index in Alphanumeric Order

Part No.

Page

Part No.

Description

Page

Part No.

Description

Page

SEL2910A

3 Round Type LED

136

SEL6410G

3 Round Type LED, Direct mount supported

135

SEL2910D

3 Round Type LED

136

SEL6413E

136

SEL2913K

3 Inverted-cone LED for Surface illumination

136

SEL6413E-TG

SEL2915A

3 Round Type Narrow-directivity LED

136

SEL6414E

SEL2915D

3 Round Type Narrow-directivity LED

136

SEL6414E-TG

SEL2E10C

3 Round Type LED

136

SEL6415E

3 Inverted-cone LED for Surface illumination,


Direct mount supported
3 Inverted-cone LED for Surface illumination,
Direct mount supported
3 Round Type Wide-directivity LED,
Direct mount supported
3 Round Type Wide-directivity LED,
Direct mount supported
3 Round Type Narrow-directivity LED,
Direct mount supported

SEL4110R

4 Round Type LED

134

SEL6510C

3 Round Type LED, Direct mount supported

135

SEL4110S

4 Round Type LED

134

SEL6510G

3 Round Type LED, Direct mount supported

135

Pitch Lead Rectangular LED,


SELU5B20C 5mm
Direct mount supported
Pitch Lead Bow-shaped LED,
SELU5E23C 5mm
Direct mount supported
3 Inverted-cone LED for Surface illumination,
SELU6213C-S Direct mount supported
Round Type Wide-directivity LED,
SELU6214C 3
Direct mount supported
3 Round Type Wide-directivity LED,
SELU6414G-S Direct mount supported
Round Type Wide-directivity LED,
SELU6614C-S 3
Direct mount supported
3 Round Type Wide-directivity LED,
SELU6614W-S Direct mount supported
Round Type Wide-directivity LED,
SELU6714C 3
Direct mount supported

SEL4114R

135

SEL6513C

136

SELU6910C-S

135

SEL6514C

135

SELU6914C-S

3 Round Type Wide-directivity LED,


Direct mount supported

135

SEL4210R

4 Round Type LED

134

SEL6515C

3 Inverted-cone LED for Surface illumination,


Direct mount supported
3 Round Type Wide-directivity LED,
Direct mount supported
3 Round Type Narrow-directivity LED,
Direct mount supported

3 Round Type LED, Direct mount supported

SEL4114S

4 Round Type Wide-directivity LED,


Direct mount supported
4 Round Type Wide-directivity LED,
Direct mount supported

135

SEP8WD4001

Multi-chip LED Module

142

SEL4210S

4 Round Type LED

134

SEL6710K

3 Round Type LED, Direct mount supported

135

SEP8WE4001

Multi-chip LED Module

142

SEL4214R

135

SEL6710Y

3 Round Type LED, Direct mount supported

135

SEP8WL4001

Multi-chip LED Module

142

SEL4214S

4 Round Type Wide-directivity LED,


Direct mount supported
4 Round Type Wide-directivity LED,
Direct mount supported

135

SEL6714K

135

SEP8WN4001

Multi-chip LED Module

142

SEL4410E

4 Round Type LED

135

SEL6714W

135

SEP8WW4001

Multi-chip LED Module

142

SEL4410G

4 Round Type LED

135

SEL6715C

3 Round Type Wide-directivity LED,


Direct mount supported
3 Round Type Wide-directivity LED,
Direct mount supported
3 Round Type Narrow-directivity LED,
Direct mount supported

135

SFPB-54

Schottky Barrier Diode(Surface Mount)

130

SEL4414E

135

SEL6810A

3 Round Type LED, Direct mount supported

135

SFPB-56

Schottky Barrier Diode(Surface Mount)

130

SEL4414G

4 Round Type Wide-directivity LED,


Direct mount supported
4 Round Type Wide-directivity LED,
Direct mount supported

135

SEL6810D

3 Round Type LED, Direct mount supported

135

SFPB-59

Schottky Barrier Diode(Surface Mount)

130

SEL4510C

4 Round Type LED

135

SEL6814A

3 Round Type Wide-directivity LED,


Direct mount supported

135

SFPB-64

Schottky Barrier Diode(Surface Mount)

130

SEL4514C

4 Round Type Wide-directivity LED,


Direct mount supported

135

SEL6910A

3 Round Type LED, Direct mount supported

135

SFPB-66

Schottky Barrier Diode(Surface Mount)

130

SEL4710K

4 Round Type LED

134

SEL6910D

3 Round Type LED, Direct mount supported

135

SFPB-69

Schottky Barrier Diode(Surface Mount)

130

SEL4710Y

4 Round Type LED

134

SEL6914A

135

SFPB-74

Schottky Barrier Diode(Surface Mount)

130

SEL4714K

135

SEL6914W

135

SFPB-76

Schottky Barrier Diode(Surface Mount)

130

SEL4714Y

4 Round Type Wide-directivity LED,


Direct mount supported
4 Round Type Wide-directivity LED,
Direct mount supported

135

SEL6915A

3 Round Type Wide-directivity LED,


Direct mount supported
3 Round Type Wide-directivity LED,
Direct mount supported
3 Round Type Narrow-directivity LED,
Direct mount supported

135

SFPE-64

Schottky Barrier Diode(Surface Mount)

130

SEL4810A

4 Round Type LED

134

SEL6E10C

3 Round Type LED, Direct mount supported

135

SFPJ-53

Schottky Barrier Diode(Surface Mount)

130

SEL4810D

4 Round Type LED

134

SELS1E10CXM-M

5 Round Wide-directivity LED

134

SFPJ-63

Schottky Barrier Diode(Surface Mount)

130

SEL4814A

135

SELS5223C

SFPJ-73

Schottky Barrier Diode(Surface Mount)

130

135

SELS5923C

136

SFPL-52

Ultrafast Recovery Diode(Surface Mount)

130

SEL4910A

4 Round Type LED

134

SELS5B23C

136

SFPL-62

Ultrafast Recovery Diode(Surface Mount)

130

SEL4910D

4 Round Type LED

134

SELS6B13W

136

SFPL-64

Ultrafast Recovery Diode(Surface Mount)

130

SEL4914A

135

SELS6B14C

135

SFPM-52

Rectifier Diode(Surface Mount)

130

135

SELS6D14C

135

SFPM-54

Rectifier Diode(Surface Mount)

130

136

SELS6E14C-M

135

SFPM-62

Rectifier Diode(Surface Mount)

130

136

SELU1210CXM

5 Round Wide-directivity LED

134

SFPM-64

Rectifier Diode(Surface Mount)

130

136

SELU1250CM

5 Round Narrow-directivity LED,


Direct mount supported

134

SFPW-56

Schottky Barrier Diode(Surface Mount)

130

136

SELU1253CMKT

4.6 x 5.6 Egg-shaped LED

134

SFPZ-68

Power Zener Diode

129

136

SELU1910CXM-S 5 Round Wide-directivity LED

134

SG-9CNR

Rectifier Diode for Alternator

127

136

SELU1D10CXM

5 Round Wide-directivity LED

134

SG-9CNS

Rectifier Diode for Alternator

127

136

SELU1D50CM

5 Round Narrow-directivity LED,


Direct mount supported

134

SG-9CZR

Rectifier Diode for Alternator

127

136

SELU1E10CXM

5 Round Wide-directivity LED

134

SG-9CZS

Rectifier Diode for Alternator

127

136

SELU1E50CM

5 Round Narrow-directivity LED,


Direct mount supported

134

SG-9LCNR

Rectifier Diode for Alternator

127

136

SELU2215R-S

3 Round Type Narrow-directivity LED

136

SG-9LCNS

Rectifier Diode for Alternator

127

136

SELU2610C-S

3 Round Type LED

135

SG-9LLCNR

Rectifier Diode for Alternator

127

136

SELU2710C

3 Round Type LED

136

SG-9LLCNS

Rectifier Diode for Alternator

127

136

SELU2B10A-S

3 Round Type LED

135

SG-9LLCZR

Rectifier Diode for Alternator

127

SEL5E23C

4 Round Type Wide-directivity LED,


Direct mount supported
4 Round Type Wide-directivity LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported

5mm Pitch Lead Bow-shaped LED,


Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
3 Inverted-cone LED for Surface illumination,
Direct mount supported
3 Round Type Wide-directivity LED,
Direct mount supported
3 Round Type Wide-directivity LED,
Direct mount supported
3 Round Type Wide-directivity LED,
Direct mount supported

136

SEL4814D

4 Round Type Wide-directivity LED,


Direct mount supported
4 Round Type Wide-directivity LED,
Direct mount supported

136

SELU2D10C

3 Round Type LED

136

SG-9LLCZS

Rectifier Diode for Alternator

127

SEL6110R

3 Round Type LED, Direct mount supported

135

SELU2E10C

3 Round Type LED

136

SG-10LLR

Rectifier Diode for Alternator

127

SEL6110S

3 Round Type LED, Direct mount supported

135

SELU4410CKT-S

4 Round Type LED

135

SG-10LLS

Rectifier Diode for Alternator

127

SEL6210R

3 Round Type LED, Direct mount supported

135

SELU5220C-S

136

SG-10LLXR

Rectifier Diode for Alternator

127

SEL6210S

3 Round Type LED, Direct mount supported

135

SELU5620S-S

136

SG-10LLXS

Rectifier Diode for Alternator

127

SEL6214S

135

SELU5720C

136

SG-10LLZ23R

Rectifier Diode for Alternator

127

SEL6215S

3 Round Type Wide-directivity LED,


Direct mount supported
3 Round Type Narrow-directivity LED,
Direct mount supported

135

SELU5723C

136

SG-10LLZ23S

Rectifier Diode for Alternator

127

SEL6410E

3 Round Type LED, Direct mount supported

135

SELU5820C-S

5mm Pitch Lead Rectangular LED,


Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported

136

SG-10LR

Rectifier Diode for Alternator

127

SEL4914D
SEL5220S
SEL5223S
SEL5420E
SEL5423E
SEL5520C
SEL5523C
SEL5620C
SEL5723C
SEL5820A
SEL5823A
SEL5920A
SEL5923A
SEL5E20C

148

Description

136
135
135
135

136

135

136
136
135
135
135
135
135

Part Number Index in Alphanumeric Order

Part No.

Description

Page

Part No.

Description

Page

SG-10LS

Rectifier Diode for Alternator

127

SML1516W

5 Round Standard Bicolor LED

137

SG-10LXR

Rectifier Diode for Alternator

127

SML1816W

5 Round Standard Bicolor LED

137

SG-10LXS

Rectifier Diode for Alternator

127

SML19416W

5 Round Standard Bicolor LED

137

SG-10LZ23R

Rectifier Diode for Alternator

127

SML72420C

3.3 x 6 Rectangular Type Bicolor LED

137

SG-10LZ23S

Rectifier Diode for Alternator

127

SML72423C

3.3 x 6 Bow-Shaped Type Bicolor LED

137

SG-14LXZS

Rectifier Diode for Alternator

127

SML72923C

3.3 x 6 Bow-Shaped Type Bicolor LED

137

SG-14LXZS

Rectifier Diode for Alternator

127

SML78420C

3.3 x 6 Rectangular Type Bicolor LED

137

SHV-01JN

High-Voltage Rectifier Diode for Ignition Coil

128

SML78423C

3.3 x 6 Bow-Shaped Type Bicolor LED

137

SHV-05J

High-Voltage Rectifier Diode for Ignition Coil

128

SML79420C

3.3 x 6 Rectangular Type Bicolor LED

137

SHV-06JN

High-Voltage Rectifier Diode for Ignition Coil

128

SML79423C

3.3 x 6 Bow-Shaped Type Bicolor LED

137

SI-3001S

Linear Regulator IC

SMLS79723C

3.3 x 6 Bow-Shaped Type Bicolor LED

137

SI-3003S

Linear Regulator IC

10

SMLU12D16W 5 Round Standard Bicolor LED

137

SI-3101S

Linear Regulator IC

12

SMLU12E16C

5 Round Standard Bicolor LED

137

SI-3102S

Linear Regulator IC

14

SMLU12E16W

5 Round Standard Bicolor LED

137

SI-3201S

Switching Regulator IC

22

SMLU18D16C

5 Round Standard Bicolor LED

137

SI-3322S

System Regulator IC

16

SMLU18D16W-S

5 Round Standard Bicolor LED

137

SI-5151S

High-side Power Switch IC

26

SMLU72423C-S

3.3 x 6 Bow-Shaped Type Bicolor LED

137

SI-5152S

High-side Power Switch IC

28

SMLU79423C-S

3.3 x 6 Bow-Shaped Type Bicolor LED

137

SI-5153S

High-side Power Switch IC

30

SPF0001

Power transistor Array (Surface Mount)

100

SI-5154S

High-side Power Switch IC

32

SPF3004

System Regulator IC

18

SI-5155S

High-side Power Switch IC

34

SPF3006

System Regulator IC

20

SI-5300

Full-bridge Motor Driver IC

60

SPF5002A

Low-side Power Switch IC

50

SID1003BQ

5 Round Infrade LED

140

SPF5003

High-side Power Switch IC

40

SID1010CM

5 Round Infrade LED

140

SPF5004

High-side Power Switch IC

42

SID1010CXM

5 Round Infrade LED

140

SPF5007

High-side Power Switch IC

44

SID1050CM

5 Round Infrade LED, Direct mount supported

140

SPF5009

Low-side Power Switch IC

52

SID1G307C

5 Round Infrade LED

140

SPF5012

Low-side Power Switch IC

54

SID1G313C

5 Round Infrade LED

140

SPF5017

High-side Power Switch IC

46

SID1K10CM

5 Round Infrade LED

140

SPF5018

High-side Power Switch IC

48

SID1K10CXM

5 Round Infrade LED

140

SPF7211

Stepper-motor Driver IC

58

SID2010C

3 Round Infrade LED

140

SPF7301

Full-bridge Motor Driver IC

62

SID2K10C

3 Round Infrade LED

140

SSD103

Power transistor

95

SID303C

5 Round Infrade LED

140

STA315A

Power transistor Array

101

SID307BR

5 Round Infrade LED

140

STA335A

Power transistor Array

102

SID313BP

5 Round Infrade LED

140

STA415A

Power transistor Array

103

SJPZ-E18

Power Zener Diode (Surface Mount)

129

STA460C

Power transistor Array

104

SJPZ-E27

Power Zener Diode (Surface Mount)

129

STA461C

Power transistor Array

105

SJPZ-E33

Power Zener Diode (Surface Mount)

129

STA463C

Power transistor Array

106

SJPZ-E36

Power Zener Diode (Surface Mount)

129

STA464C

Power transistor Array

107

SJPZ-K28

Power Zener Diode (Surface Mount)

129

STA508A

MOS FET Array

123

SLA2402M

High Voltage Driver IC for HID Lamps

64

STA509A

MOS FET Array

124

SLA2403M

High Voltage Driver IC for HID Lamps

68

SZ-10N27

Power Zener Diode (Surface Mount)

129

SLA2501M

High-side Power Switch IC

36

SZ-10N40

Power Zener Diode (Surface Mount)

129

SLA2502M

High-side Power Switch IC

38

SZ-10NN27

Power Zener Diode (Surface Mount)

129

SLA4708M

Stepper-motor Driver IC

56

SZ-10NN40

Power Zener Diode (Surface Mount)

129

SLA5027

MOS FET Array

120

TFC561D

125

SLA5098

MOS FET Array

121

TFC562D

3-Pin Reverce Conducting Thyrisyor for


HID Lamp Ignition
3-Pin Reverce Conducting Thyrisyor for
HID Lamp Ignition

SLA8004

Power transistor Array

99

SMA2409M

High Voltage Driver IC for HID Lamps

72

SMA5113

MOS FET Array

122

SML11516C

5 Round Standard Bicolor LED

137

SML1216C

5 Round Standard Bicolor LED

137

SML1216W

5 Round Standard Bicolor LED

137

126

149

http://www.sanken-ele.co.jp
SANKEN ELECTRIC CO.,LTD.

ISO 9001/14001 Certified

Sanken products are manufactured and delivered to the customer based


on a strict quality and environmental control system established and
certified by the ISO 9001/14001 international certification standards.

1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo


Tel: 81-3-3986-6164 Fax: 81-3-3986-8637
IProducts: Power IC, Control IC, Hall IC, Bipolar Transistor, MOS FET, IGBT, Thyristor, Rectifier Diode, LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp),
Switching Power Supply, UPS (Uninterruptible Power Supply), DC Power Supply, Inverter, Universal Airway Beacon System and Other Power Supplies and Equipments

Overseas Sales Offices


Asia
Singapore

North America

Sanken Electric Singapore Pte. Ltd.

115 Northeast Cutoff, Worcester, MA 01606 General Information


Tel: 1-508-853-5000 Fax: 1-508-853-3353

150 Beach Road, #14-03 The Gateway West Singapore 189720, Singapore
Tel: 65-6291-4755 Fax: 65-6297-1744

China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: 852-2735-5262 Fax: 852-2735-5494

Allegro MicroSystems, Inc.

Europe
Sanken Power Systems (UK) Ltd.
Abercynon, Mountain Ash, Mid Glamorgan CF45 4XA, U.K.
Tel: 44-1443-742-333 Fax: 44-1443-743-354

Sanken Electric (Shanghai) Co., Ltd.


Room 3202, Maxdo Centre, Xingyi Road 8 Changning district, Shanghai, China
Tel: 86-21-5208-1177 Fax: 86-21-5208-1757

Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg., 6F 168, Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700 Fax: 82-2-3272-2145

Taiwan
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161 Fax: 886-2-2356-8261

The information contained in this document is correct as of July 2006.


This
is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following:
1. Resell or retransfer these products/technology to any party intending to disturb international peace and security.
2. Use these products/technology yourself for activities disturbing international peace and security.
3. Allow any other party to use these products/technology for activities disturbing international peace and security.
Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign
Trade Law, when you export or transfer the products/technology abroad.

This document uses 100% recycled paper.

H1-C01ED0-0607020TA