isc Product Specification

INCHANGE Semiconductor

www.DataSheet4U.com

isc Silicon NPN Power Transistor

2SD5011

DESCRIPTION
High Breakdown Voltage: VCBO= 1500V (Min)
High Switching Speed
High Reliability
Built-in Damper Diode

APPLICATIONS
Designed for color TV horizontal output applications

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ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

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PARAMETER

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

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VALUE

UNIT

1500

800

IC

Collector Current- Continuous

3.5

ICM

Collector Current-Peak

10

PC

Collector Power Dissipation

@ TC=25

50

TJ

Junction Temperature

150

-55~150

Tstg

Storage Temperature Range

isc Websitewww.iscsemi.cn

isc Product Specification

INCHANGE Semiconductor

www.DataSheet4U.com

isc Silicon NPN Power Transistor

2SD5011

ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL

PARAMETER

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat)

CONDITIONS

MAX

UNIT

IC= 2.5A; IB= 0.8A

8.0

Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.8A

1.5

ICBO

Collector Cutoff Current

VCB= 800V ; IE= 0

10

IEBO

Emitter Cutoff Current

VEB= 4V ; IC= 0

130

mA

hFE

DC Current Gain

IC= 0.5A; VCE= 5V

VECF

C-E Diode Forward Voltage

2.0

Current-GainBandwidth Product

tf

Fall Time

isc Websitewww.iscsemi.cn

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IC= 0.5A; VCE= 10V

IC= 3A, IB1= 0.8A; IB2= -1.6A

RL= 66.7;VCC= 200V

TYP.

40

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fT

IF= 3.5A

MIN

MHz

0.4