IRFP450

N - CHANNEL 500V - 0.33 - 14A - TO-247

PowerMESH MOSFET
TYPE
IRFP450

V DSS

R DS(on)

ID

500 V

< 0.4

14 A

TYPICAL RDS(on) = 0.33

EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED

DESCRIPTION
This power MOSFET is designed using the
companys consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.

TO-247

APPLICATIONS

HIGH CURRENT SWITCHING

UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

INTERNAL SCHEMATIC DIAGRAM

3
2
1

ABSOLUTE MAXIMUM RATINGS

Symbol

Value

Uni t

Drain-source Voltage (V GS = 0)

500

V DGR

Drain- gate Voltage (R GS = 20 k)

500

V GS

Gate-source Voltage

V DS

Parameter

20

ID

Drain Current (continuous) at Tc = 25 C

14

ID

Drain Current (continuous) at Tc = 100 C

8.7

Drain Current (pulsed)

56

IDM ()
P t ot
dv/dt( 1 )
T stg
Tj

Total Dissipation at Tc = 25 C

190

Derating F actor

1.5

W/ C

3.5

V/ ns

Peak Diode Recovery voltage slope

Storage T emperature
Max. O perating Junction Temperature

() Pulse width limited by safe operating area

August 1998

-65 to 150

150

(1) ISD 14 A, di/dt 130 A/s, VDD V(BR)DSS, Tj TJMAX

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IRFP450
THERMAL DATA
R t hj-ca se
Rthj -amb

R thc- si nk
Tl

Thermal Resistance Junction-case

Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose

0.66
30
0.1
300

C/W
oC/W
o
C/W
o
C

Max Valu e

Unit

14

800

mJ

AVALANCHE CHARACTERISTICS
Symb ol

Parameter

I AR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

E AS

Single Pulse Avalanche Energy

(starting Tj = 25 o C, I D = IAR , VDD = 50 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF
Symb ol
V (BR)DSS
I DSS
I GSS

Parameter
Drain-source
Breakdown Voltage

Test Cond ition s

I D = 250 A

V DS = Max Rating
Zero G ate Voltage
Drain Current (VGS = 0) V DS = Max Rating
Gate-body Leakage
Current (V DS = 0)

Min.

Typ .

Max.

500

V GS = 0

Un it
V

T c = 125 C

V GS = 20 V

1
50

A
A

100

nA

ON ()
Symb ol

Parameter

Test Cond ition s

ID = 250 A

V GS(th)

Gate Threshold
Voltage

R DS( on)

Static Drain-source On V GS = 10V

Resistance

ID(o n)

V DS = VGS

Min.

Typ .

Max.

Un it

0.33

0.4

ID = 8.4 A
14

On State Drain Current V DS > I D(on) x R DS(on) max

V GS = 10 V

DYNAMIC
Symb ol
g fs ()
C iss
C oss
C rss

2/8

Parameter

Test Cond ition s

Forward
Transconductance

V DS > I D(on) x R DS(on) max

Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance

V DS = 25 V

f = 1 MHz

I D = 8.4 A
VGS = 0

Min.

Typ .

Max.

Un it

9.3

13

2600
330
40

pF
pF
pF

IRFP450
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol

Parameter

Test Cond ition s

t d(on)
tr

Turn-on Time
Rise Time

V DD = 250 V I D = 7A
VGS = 10 V
R G = 4.7
(see test circuit, figure 1)

Qg
Q gs
Q gd

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

V DD = 400 V

I D = 14A

Min.

V GS = 10 V

Typ .

Max.

Un it

24
14

ns
ns

75
13.5
27

nC
nC
nC

SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc

Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time

Test Cond ition s

Min.

Typ .

Max.

15
25
35

V DD = 400 V I D = 14 A
R G = 4.7 V GS = 10 V
(see test circuit, figure 3)

Un it
ns
ns
ns

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Cond ition s

I SD
I SDM ()

Source-drain Current
Source-drain Current
(pulsed)

V SD ()

Forward On Voltage

I SD = 14 A

Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current

I SD = 14 A di/dt = 100 A/s

o
T j = 150 C
V DD = 100 V
(see test circuit, figure 3)

t rr
Q rr
I RRM

Min.

Typ .

V GS = 0

Max.

Un it

14
56

A
A

1.4

680

ns

26

() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

() Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

3/8

IRFP450
Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

4/8

IRFP450
Normalized Gate Threshold Voltage vs
Temperature

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/8

IRFP450
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 1: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

6/8

IRFP450

TO-247 MECHANICAL DATA

mm

DIM.
MIN.

TYP.

inch
MAX.

MIN.

TYP.

MAX.

4.7

5.3

0.185

0.209

2.2

2.6

0.087

0.102

0.4

0.8

0.016

0.031

1.4

0.039

0.055

F3

2.4

0.079

0.094

F4

3.4

0.118

0.134

10.9

0.429

15.3

15.9

0.602

0.626

19.7

20.3

0.776

0.779

L3

14.2

14.8

0.559

0.413

L4

34.6

1.362

L5

5.5

0.217

0.582

0.079

0.118

Dia

3.55

3.65

0.140

0.144

P025P

7/8

IRFP450

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8/8

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