Sanken Power Transistors

POWER TRANSISTORS
SANKEN ELECTRIC CO.,LTD.
Bulletin No
T01EE0
( July,2001)
C AU T I O N / WA R N I N G
information in this publication has been carefully checked and is believed to be
The
accurate; however, no responsibility is assumed for inaccuracies.
reserves the right to make changes without further notice to any products herein in
Sanken
the interest of improvements in the performance, reliability, or manufacturability
of its products. Before placing an order, Sanken advises its customers to obtain the
latest version of the relevant information to verify that the information being relied upon
is current.
Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property
rights or any other rights of Sanken or any third party which may result from its use.
When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death, fires
or damages to the society due to device failure or malfunction.
Sanken products listed in this catalog are designed and intended for the use as components
in general purpose electronic equipment or apparatus (home appliances, office equipment,
telecommunication equipment, measuring equipment, etc.).
Before placing an order, the users written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability
is required (transportation equipment and its control systems, traffic signal control
systems or equipment, fire/crime alarm systems, various safety devices, etc.), please
contact your nearest Sanken sales representative to discuss and obtain written confirmation
of your specifications.
The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
Anti radioactive ray design is not considered for the products listed herein.
This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.
Contents
Transistor Selection Guide..2
Reliability.........................6
Temperature Derating in
Safe Operating Area.........9
Accessories.....................9
Switching Characteristics
Test Circuit....................10
Symbols and Term...........10
A1186............................11
A1215............................12
A1216............................13
A1262............................14
A1294............................15
A1295............................16
A1303............................17
A1386/A ........................18
A1488/A ........................19
A1492............................20
A1493............................21
A1494............................22
A1567............................23
A1568............................24
A1667/8.........................25
A1673............................26
A1693............................27
A1694............................28
A1695............................29
A1725............................30
A1726............................31
A1746............................32
A1859/A ........................33
A1860............................34
A1907............................35
A1908............................36
A1909............................37
A2042............................38
B1257............................39
B1258............................40
B1259............................41
B1351............................42
B1352............................43
B1382............................44
B1383............................45
B1420............................46
SANKEN POWER TRANSISTORS

B1559............................47
B1560............................48
B1570............................49
B1587............................50
B1588............................51
B1647............................52
B1648............................53
B1649............................54
B1659............................55
B1685............................56
B1686............................57
B1687............................58
C2023 ...........................59
C2837 ...........................60
C2921 ...........................61
C2922 ...........................62
C3179 ...........................63
C3263 ...........................64
C3264 ...........................65
C3284 ...........................66
C3519/A ........................67
C3678 ...........................68
C3679 ...........................69
C3680 ...........................70
C3830 ...........................71
C3831 ...........................72
C3832 ...........................73
C3833 ...........................74
C3834 ...........................75
C3835 ...........................76
C3851/A ........................77
C3852/A ........................78
C3856 ...........................79
C3857 ...........................80
C3858 ...........................81
C3890 ...........................82
C3927 ...........................83
C4020 ...........................84
C4024 ...........................85
C4064 ...........................86
C4065 ...........................87
C4073 ...........................88
C4130 ...........................89
C4131 ...........................90
C4138 ...........................91
C4139 ...........................92
C4140 ...........................93
C4153 ...........................94
C4296 ...........................95
C4297 ...........................96
C4298 ...........................97
C4299 ...........................98
C4300 ...........................99
C4301 .........................100
C4304 .........................101
C4381/2 ......................102
C4388 .........................103
C4418 .........................104
C4434 .........................105
C4445 .........................106
C4466 .........................107
C5333 .........................135
C5370 .........................136
D1769 .........................137
D1785 .........................138
D1796 .........................139
D2014 .........................140
D2015 .........................141
D2016 .........................142
D2017 .........................143
D2045 .........................144
D2081 .........................145
D2082 .........................146
D2083 .........................147
D2141 .........................148
D2389 .........................149
D2390 .........................150
D2401 .........................151
C4467 .........................108
C4468 .........................109
C4495 .........................110
C4511 .........................111
C4512 .........................112
C4517/A......................113
C4518/A......................114
C4546 .........................115
C4557 .........................116
C4662 .........................117
C4706 .........................118
C4883/A......................119
C4886 .........................120
C4907 .........................121
C4908 .........................122
C5002 .........................123
C5003 .........................124
C5071 .........................125
C5099 .........................126
C5100 .........................127
C5101 .........................128
C5124 .........................129
C5130 .........................130
C5239 .........................131
C5249 .........................132
C5271 .........................133
C5287 .........................134
D2438 .........................152
D2439 .........................153
D2557 .........................154
D2558 .........................155
D2560 .........................156
D2561 .........................157
D2562 .........................158
D2589 .........................159
D2641 .........................160
D2642 .........................161
D2643 .........................162
SAH02 ........................163
SAH03 ........................164
SAP09N ......................165
SAP09P ......................166
SAP10N ......................167
SAP10P ......................168
SAP16N ......................169
SAP16P ......................170
SAP Series
Application
Information................171
Discontinued Parts
Guide ........................176
Transistor Selection Guide

VCEO-IC
800
C3678
C4020
C4299
C4304
C4445
C4908
C5249
C4517
C4517A
C5239
600
550
C3679
C4300
C4706
C3927
C4557
C3830
C4907
400
C4073
C4418
C4662
C5130
C3831
C3832
C3890
C4130
C4546
C4138
C4296
C3833
C4297
C5071
D2017
200
A1668
C4382
180
A1859A
C4883A
D2016
C5271
D2557
D2558
160
150
C4140
D2141
A1667
A1859
C4381
C4883
B1559
B1587
D2389
D2438
140
120
D2015
D1769
D1785
D2045
110
100
80
C3852A
A1488A
C3851A
D2014
60
C3852
A1262
A1488
B1257
C3179
C3851
D1796
50
C4495
C3834
C3835
C4153
A1694
A1908
C4467
C5100
A1186
B1560
B1588
C2837
D2390
D2439
A1695
A1909
C4468
C5101
B1259
D2081
A1303
A1860
C3284
C4886
A1295
C3264
A1494
C3858
A1386A
A1492
A1673
C3519A
C3856
C4388
A1215
A1386
C2921
C3519
B1647
B1649
D2560
D2562
A1216
C2922
B1648
D2561
B1382
B1420
D2082
B1383
D2083
A1568
B1351
B1352
C4065
A2042
C4024
B1570
D2401
A1294
C3263
A1493
C3857
B1659
B1685
B1686
B1687
D2489
D2641
D2642
D2643
B1258
A1693
A1725
A1726
A1907
C4466
C4511
C4512
C5099
40
5
10
A1567
A1746
C4064
C5370
12
Collector Current IC(A)
C4139
C4298
C4434
C2023
C5333
250
230
CollectorEmitter Voltage VCEO(V)
C5124
C4518
C4518A
C5287
500
380
300
C3680
C4301
C5002
C5003
C4131
14
15
16
17
18
25

Transistors for Switch Mode Power Supplies (for AC80 130V input)
VCBO(V)
VCEO(V)
IC (A)
250
200
MT-25
(TO220)
7
500
400
C3832
FM20
(TO220F)
12
15
400
600
500
600
C3830
FM100
(TO3PF)
C4138
C3833
C5071
C4139
C4434
C4140
C4296
C4297
C5271
C4073
C4418
C4662
C3890
C4130
10
18
5
7
6
10
3
MT100
(TO3P)
C4298
C5130
C4546
C4907
C3831
C5249
Transistors for Switch Mode Power Supplies (for AC180 280V input)
VCBO(V)
900
(1000)
VCEO(V)
IC (A)
550
3
5
600
10
14
MT-25
(TO220)
FM20
(TO220F)
C5239
C4517(A)
C4518(A)
C4020
800
FM100
(TO3PF)
C5287
C3927
C4706
C4557
C4908
C3678
3
900
MT100
(TO3P)
C4304
5
7
C3679
C3680
C4299
C4445
C4300
C4301

Transistors for Audio Amplifiers
Single Transistors
Single
Emitter
Part No.
PC(W)
2SA1725/2SC4511
30
2SA1726/2SC4512
50
VCEO(V)
60
2SA1907/2SC5099
60
2SA1908/2SC5100
75
2SA1694/2SC4467
80
hFE(min)
fT(MHz)
Package
FM20 (TO220F)
MT-25 (TO220)
80
2SA1693/2SC4466
IC (A)
6
MT-100 (TO3P)
FM100 (TO3PF)
120
8
MT-100 (TO3P)
50
2SA1909/2SC5101
80
140
10
2SA1673/2SC4388
85
180
15
2SA1695/2SC4468
100
140
10
2SA1492/2SC3856
130
180
15
2SA1493/2SC3857
150
20
FM100 (TO3PF)
MT-100 (TO3P)
15
200
2SA1494/2SC3858
LAPT
MT-200 (2-screw mount)

17
200
(Multi emitter for High Frequency)

Part No.
PC(W)
VCEO(V)
2SA1860/2SC4886
80
2SA1186/2SC2837
100
2SA1303/2SC3284
125
2SA1386/2SC3519
130
160
2SA1386A/2SC3519A
130
180
2SA1294/2SC3263
130
230
35
2SA1215/2SC2921
150
160
50
2SA1216/2SC2922
200
180
150
IC (A)
hFE(min)
14
50
10
60
14
50
50
Transistors
FM100 (TO3PF)
40
40
17
200
Package
MT-100 (TO3P)
15
2SA1295/2SC3264
fT(MHz)
35
230
with built in temperature compensation diodes for audio amplifier
Part No.
PC(W)
VCEO(V)
IC (A)
hFE(min)
Emitter Resistor()
SAP09P/SAP09N
80
150
10
5000
0.22
SAP10P/SAP10N
100
150
12
5000
0.22
SAP16P/SAP16N
150
160
15
5000
0.22

Darlington Transistors
Part No.
PC(W)
2SB1686
VCEO(V)
IC (A)
hFE(min)
fT(MHz)
100
30
2SD2642
2SB1659
100
110
2SB1685
2SB1687
100
2SB1587
100
60
75
2SD2438
2SB1559
80
65
150
10
50
80
2SD2439
55
15
2SB1649
85
2SD2562
2SB1560
70
50
10
55
150
2SB1647
2SD2560
2SB1570
2SD2401
130
15
150
12
70
50
55
45
200
2SD2561
MT-100 (TO3P)
45
150
2SB1648
FM100 (TO3PF)
45
200
100
2SD2390
MT-100 (TO3P)
80
5000
2SB1588
FM100 (TO3PF)
65
80
2SD2389
MT-100 (TO3P)
60
60
2SD2643
MT-25 (TO220)
60
60
2SD2641
FM20 (TO220F)
60
50
2SD2589
Package
17
70
Temperature compensation Transistors and Driver Transistors

Part No.
2SC4495
PC(W)
25
2SC4883
VCEO(V)
50
hFE(min)
fT(MHz)
500
40
60
120
Package
Driver, Complement 2SA1859
180
2SC4883A
2SA1859
2
180
FM20
(TO220F)
Driver, Complement 2SA1859A

Driver, Complement 2SC4883
150
20
Remarks
Temperature compensation
150
20
2SA1859A
IC (A)
60
60
Driver, Complement 2SC4883A
Reliability
4. Applications Considered on Reliability
The word reliablity is an abstract term which refers to the degree to

which equipment or components, such as semiconductor devices, are
resistant to failure. Reliability can be and is often measured quantitatively.
Reliability is defined as whether equipment or components (such as
a semiconductor device) under given conditions perform the same at
the end of a given period as at the beginning.
2. Reliability Function
Collector Current Ic(A)
Failure Rate ()
us
SOA(Safe Operating Area)
Collector-Emitter Voltage Vce(V)
Figure 2 SOA
Initial
Failure
Random or
Chance Failure
Wear-out
Failure
Time (t)
Figure 1 Bath Tub Curve

These three types of failure describe bathtub curve shown in
Figure 1. Infant failures can be attributed to trouble in the production
process and can be eliminated by aging befor shipment to customers,
stricter control of the production process and quality control measures.
Semiconductor devices such as transistors, unlike electronic equipment,
take a considerable amount of time to reach the stage where wear-out
failure begins to occur. And, as shown in Figure 1 (b), they also last
much longer than electronic equipment. This shows that the longer they
are used the more stable they actually become.
The reduction that occurs in random failures can be approximated by
Weibull distribution, logarithmic normal distribution, or gamma distribution, but Weibull distribution best expresses the phenomenon that
occurs with transistors.
3. Quantitative Expression of Reliability

While there are many ways to quantitatively express reliability, two
criteria, failure rate and life span, are generally used to define the
reliability of semiconductors such as transistrors.
a) Failure Rate (FR)
Failure rate often refers to instantaneous failures or (t). In general
of reliability theory, however, the cumulative failure rate, or Reliability Index, is
r(t)
(1)
Nt
Where N = Net quantity used, and
r(t) = Net quantitiy failed after t hours
If we assign t the arbitrary
FR=
F R = r 100 (%/1,000 hours)(2)

N
In situations where the cumulative failure rate is small, failure is expressed in units of one Fit, 10-9 (failures/hours).
b) Life Span(L)
Life Span can be expressed in terms of average lifespan or as Mean
Time Between Failure (MTBF), but assuming that random failure
is shown by the Index Distribution [ (t) = constant], then Life Span
or L can be shown by the equation
1
L = (hours)(3)
F R
Loc
Estimation
wn
Semiconductor
Devices
o
akd
Bre
ary wer
Po
bl e
wa
(b)
ond
llo
xA
General Electronic
Equipment or
Components
(a)
S ec
1. Infant failure
2. Random failure
3. Wear-out failure
Ma
In general, there are three types of failure modes in electronic components:
a) The type and specifications of our transistors and semiconductor

devices vary depending on the application that will be required by
their intended use. Customer should, therefore, determine
which type will best suit their purposes.
b) Note that high temperratures or long soldering periods must be avoided during soldering, as heat can be transmitted through external
leads into the interior. This may cause deterioration if the maximum
allowable temperature is exceeded.
c) When using the trasistor
under pulse operation or
Max.Allowable
inductive load, the Safe
Current
Operating Area (SOA) for
the current and voltage must
not be exceeded (Figure 2).
Max.
Allowable
Voltage Vceo(Max)
1. Definition of Reliability
d) The reliability of transistors and semiconductor devices is greatly

affected by the stress of junction temperature. If we accept in general
proceed in the form of Arrhenius equation, the relationship between
the junction temperature Tj and lifespan L can be expressed with
the following empirical formula
n L = A+ B (4)
Tj
It is, hence, very important to derate the junction temperature to
assure a high reliability rate.
5. Reliability Test
Sanken bases its test methods and conditions on the following
standards. Tests are conducted under these or stricter conditions,
The details of these are shown in Table 1.
MIL-STD-202F (Test method for electrical and electronic components)
MIL-STD-750C (Test method for semiconductor equipment)
JIS C 7021 (Endurance test and environmental test method for
individual semiconductor devices)
JIS C 7022 (Endurance test and environmental test method for
integrated circuits of semiconductors)
6. Quality Assurance
To ensure high quality and high reliability, quality control and production process control procedures are executed from the receipt of parts
through the entire production process. Our quality assurance system
is shown in Figure 3.
Reliability
Table 1: Test Methods and Conditions
Details of the Testing Method
LTPD(%)
Continuous Operations Test
Collector dissipation with maximum junction temperature is applied continuously at

room temperature to judge lifespan and reliability under transistor operating conditions.
*5/1000hrs
Intermittent Operation Test
Power equal to that used in the Continuous Operations Test is applied intermittently
to test the transistors lifespan and reliability under on and off conditions.
5/1000hrs
Test
High Temperature Storage Test

Low Temperature Storage Test
Confirms the highest storage temperature and operating temperature of transistors.

Confirms the lowest storage temperature of transistors.
5/1000hrs
5/1000hrs
Moisture Resistance Test
Tested at RH=85% and TA=85C for the effects of the interaction between
temperature and humidity, and the effects of surface insulation between electrodes
and high temperature/high humidity.
5/1000hrs
Heat Cycle Test
Tested at Tstg min Room temp. Tstg max Room temp. for 10 cycles (one cycle
30 min. 5 min. 30 min. 5 min.) to detect mechanical faults and characteristic
changes caused by thermal expansion and shrinkage of the transistor.
Heat Shock Test
Tested at 100C (5 min.), 25C (within 3 sec.), 0C (5 min.) for 10 cycles to check for
mechanical faults and characteristic changes caused by thermal expansion and
shrinkage of transistor.
Soldering Heat Test
Tested at 260 5C, 10 1 sec, by dipping lead wire to 1.5mm from the seating plane
in solder bath to check for characteristic changes caused by drastic temperature rises
of exterior lead wire.
Vibrations Test
Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for

2 hours each (total 6 hours) to check for characteristic changes caused by vibration
during operation and transportion.
Drop Test
Tested by dropping 10 times from 75 cm height to check for mechanical endurance

and characteristic changes caused by shock during handling.
Reliability Standard : 60%
Figure 3 Quality Assurance System

Material Purchasing
Incoming Inspection
Physical and Chemical Inspection
Production Process
Quality Control
Production Process Control
Specialized Tests for all units

Marking
Packing
Shipping Inspection
Shipment
Periodical Quality Assurance Test

1. Operational Life (continuous) Test
2. Operational Life (intermittent) Test
3. High Temperature Storage Test
4. Low Temperature Storage Test
5. Moisture Resistance Test
6. Heat Cycle Test
7. Heat Shock Test
8. Soldering Heat Test
9. Vibaration Test
10. Drop Test
Reliability
7. Notes Regarding Storage, Characteristic Tests, and Handling
Since reliability can be affected adversely by improper storage
environment and handling methods during Characteristic tests,
please observe the following cautions.
a) Cautions for Storage
1. Ensure that storage conditions comply with the standard
temperature (5 to 35C) and the standard relative humidity
(arround 40 to 75%) and avoid storage locations that
experience extreme changes in temperature or humidity.
2. Avod locations where dust or harmful gases are present,
and avoid direct sunlight.
3. Reinspect for rust in leads and solderbility that have been
stored for a long time.
b) Cautions for Characteristic Tests and Handling
1. When characteristic tests are carried out during inspection
testing and other standard test periods, protect the transistor
from surges of power from the testing device, shorts between
the transistor and the heatsink
c) Silicone Grease
When using a heatsink, please coat the back surface of the
transistor and both surfaces of the insulating plate with a thin
layer of silicone grease to improve heat transfer between the
transistor and the heatsink.
Recommended Silicone Grease
G-746 (Shin-Etsu Chemical)
YG6260 (GE Toshiba Silicone)
SC102 (Dow Corning Toray Silicone)
d) Torque when Tightening Screws
Thermal resistance increases when tightening torque is small,
and radiation effects are decreased. When the torque is too
high, the screw can cut, the heatsink can be deformed, and/or
distortion can arise in the products frame. To avoid these
problems, Table 2 shows the recommended tightening torques
for each product type.
Table 2. Screw Tightening Torques
Package
Screw Tightening Torque
MT25 (TO-220)
0.490 to 0.686 N m (5 to 7kgf cm)
FM20 (TO-220 Full Mold)
0.490 to 0.686 N m (5 to 7kgf cm)
MT100 (TO-3P)
0.686 to 0.822 N m (7 to 9kgf cm)
FM100 (TO-3P Full Mold)
0.686 to 0.822 N m (7 to 9kgf cm)
MT200 ( two-point mount)
0.686 to 0.822 N m (7 to 9kgf cm)
2GR ( one-point mount)
0.686 to 0.822 N m (7 to 9kgf cm)
e) Soldering Temperature
In general, the transistor is subjected to high temperatures when
it is mounted on the printed circuit board, whether from flow solder
from a solderbath, or, in hand operations from a soldering iron.
The testing method and test conditions (JIS-C-7021 standards)
for a transistors heat resistance during soldering are:
At a distance of 1.5mm from the transistors main body,
apply 260C for 10 seconds, and 350C for 3 seconds.
However, please stay well within these limits and for as short
a time as possible during actual soldering.
Reliability
Temperature Derating in Safe Operating Area
Flange (case) temperature is typically described as 25C, but it must be derated subject to the operating
temperature.
This derating curve is determined by manufacturing conditions of devices, materials used etc. and in case of a
silicon transistor, breakdown voltage and DC Current Gain are significantly deteriorated in the temperature
range of 260C to 360C.
Hence, the collector current must be derated by using the derating curve in Fig.2 where the breakdown point is
set at 260C.
Pc
100
lim
re
a
B
S/
50
lim
itin
ar
ea
rea
rea
ga
ga
itin
lim
Tc=25C
S/
itin
lim
Pc
Collector Current Ic (A)
ga
Collector Current
Derating coefficient DF (%)
itin
50
Collector-Emitter Voltage VCE (V)
100
150
200
250
300
Case Temp Tc (C)
Fig.1 Safe Operating Area
Fig.2 Derating Curve of Safe Operating Area
Derating coefficient is obtained from temperature in Fig.2 and it must be applied to the current value of the safe
operating area in order to obtain the derated current.
Accessories
Sanken Transistors do not include accessories. Accessories may be attached at a cost if requested.
Sanken transistor case is a standard size, and can be used with any generally sold accessories.
Insulater: Mica, with a thickness of 0.06mm, +0.045 0.005 allowance

Type Name:Mold(14)Mica
3.1
20.0
0.1
12.00.1
0.1
10.0
+0.2
0
7.0
14.00.1
2.50.2
5.00.1
19.40.1
6.00.2
3.70.1
23.2 +0.1
0
3.2 +0.1
0
3.75 +0.1
0
24.00.1
Insulation Bush for MT-25 (TO220)
R0.5
7.0
0.1
24.0
1.50.2
24.380.1
+0.2
0
R0.5
39.00.1
R0.5
Switching Characteristics
Typical Switching Characteristics (Common Emitter)
VCC
RL
IC
VB2
VBB1
(V)
()
(A)
(V)
(V)
VBB2
IB1
IB2
(V)
(A)
(A)
tr
(s)
tstg
(s)
tf
(s)
Switching Characteristics Test Circuit/Measurement Wave Forms

20s
IC
VCC
R2
Base
Current 0
0
IB1
IB2
+VBB2
PNP
IB2
IB1
0
IC
Collector
Current 0.1IC
D.U.T
50s
0.9IC
R1
ton
VBB1
tstg tf
RL
0
GND
50s
Base
Current 0
VCC
R1
0
IB1
IC
IB2
+VBB1
NPN
IB1
Collector 0.9IC
Current
0.1IC
0
IC
D.U.T
IB2
R2
0
20s
VBB2
GND
ton
tstg tf
RL
0
Symbols
Symbol
Item
Definition
VCBO
Collector-Base Voltage
DC Voltage between Collector and Base when Emitter is open
VCEO
Collector-Emitter Voltage
Voltage between Collector and Emitter when Base is open and voltage is reversely applied to Collector junction
VEBO
Emitter-Base Voltage
DC voltage between Emitter and Base when Collector is open
IC
Collector Current
DC current passing through Collector electrode
IB
Base Current
DC current passing through Base electrode
PC
Collector Power Dissipation
Power consumed at Collector junction
Tj
Operating Junction Temperature
Maximum allowable temperature value at absolute maximum ratings
Tstg
Storage Temperature
Maximum allowable range of ambient temperature at non-operation
ICBO
Collector Cutoff Current
Collector current when Emitter is open and a specified reverse voltage is applied between Collector and Base
IEBO
Emitter Cutoff Current
Emitter current when Collector is open and a specified reverse voltage is applied between Emitter and Base
V(BR)CEO
Collector-Emitter Saturation Voltage
Breakdown voltage between Collector and Emitter when Base is open
hFE
DC Current Gain
Ratio of DC output current and DC input current at a specified voltage and current (Emitter common)
VCE(sat)
Collector-Emitter Saturation Voltage
DC voltage between Collector and Emitter under specified saturation conditions
VBE(sat)
Base-Emitter Saturation Voltage
DC voltage between Base and Emitter under specified saturation conditions
VFEC
Emitter-Collector Diode Forward Voltage Diode forward voltage between Emitter and Collector when Base is open
fT
Cut-off Frequency
Frequency at the specified voltage and current where hFE is 1 (0dB)
Cob
Collector Junction capacitance
Junction capacitance between collector and Base at a specified voltage and frequency
Ta=25C unless otherwise specified.
10
2SA1186
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837)
ICBO
VCB=150V
100max
IEBO
VEB=5V
100max
IC=25mA
150min
VEBO
V(BR)CEO
IC
10
hFE
VCE=4V, IC=3A
IB
VCE(sat)
IC=5A, IB=0.5A
PC
100(Ta=25C)
fT
Tj
150
COB
55 to +150
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
VCE=12V, IE=1A
60typ
MHz
VCB=80V, f=1MHz
110typ
pF
VB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
12
500
500
0.25typ
0.8typ
0.2typ
V CE ( sat ) I B Characteristics (Typical)
0.5
1.0
1.5
(V C E =4V)
200
Transient Thermal Resistance
DC C urrent G ain h FE
125C
25C
100
Typ
50
10
30C
50
30
0.02
0.1
0.5
f T I E Characteristics (Typical)
)
emp
p)
eT
Cas
C (
10
0.5
0.2
10
Collector Current I C (A)
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c T a Derating
(V C E =12V)
si
nk
M aximum Power Dissip ation P C (W)
50
at
Collector-Emitter Voltage V C E (V)
200
he
100
ite
10
fin
0.2
2
In
Emitter Current I E (A)
10
Without Heatsink
Natural Cooling
ith
0.5
20
0.1
40
ms
yp
10
Cu t-of f Fr eque ncy f T ( MH Z )
10
60
0
0.02
100
30
80
Collecto r Cur rent I C (A)
DC Curr ent Gain h FE
j-a t Characteristics
h FE I C Temperature Characteristics (Typical)
300
0.5
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.1
2.0
Base Current I B (A)
h FE I C Characteristics (Typical)
20
0.02
p)
5A
100
Tem
30
I B =20m A
I C =10A
Tem
40mA
se
se
60mA
(Ca
8 0m A
6
mA
120
A
0
1
0m
(V C E =4V)
125
1.4
10
5.450.1
C
I C V BE Temperature Characteristics (Typical)
j - a ( C/W)
0.65 +0.2
-0.1
Weight : Approx 6.0g

a. Part No.
b. Lot No.
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
m
00
00
2
3
IC
(A)
3.20.1
5.450.1
RL
()
A
60m
2.00.1
1.05 +0.2
-0.1
VCC
(V)
I C V CE Characteristics (Typical)
4.80.2
2.0max
10
Ca
Tstg
50min
C(
150
25
VCEO
15.60.4
9.6
1.8
150
5.00.2
Unit
2.0
Ratings
VCBO
External Dimensions MT-100(TO3P)
(Ta=25C)
Conditions
Unit
4.0
Electrical Characteristics
Symbol
Ratings
19.90.3
Symbol
4.0max
Absolute maximum ratings (Ta=25C)
Application : Audio and General Purpose
20.0min
LAPT
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(C)
11
2SA1215

ICBO
Ratings
Unit
VCB=160V
100max
36.40.3
24.40.2
VEB=5V
100max
IC=25mA
160min
VCEO
160
IEBO
VEBO
V(BR)CEO
IC
15
hFE
VCE=4V, IC=5A
50min
IB
VCE(sat)
IC=5A, IB=0.5A
2.0max
PC
150(Tc=25C)
fT
VCE=12V, IE=2A
50typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
400typ
pF
55 to +150
2-3.20.1
a
b
5.450.1
VCC
(V)
RL
()
IC
(A)
VB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
12
500
500
0.25typ
0.85typ
0.2typ
0.2
0.4
0.6
0.8
(V C E =4V)
200
25C
100
30C
50
30
0.02
5 10 15
Typ
50
0.1
0.5
p)
mp)
e Te
10 15
em
0.5
0.1
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
160
10
m
si
nk
Without Heatsink
Natural Cooling
at
0.5
80
he
120
ite
20
fin
40
10
In
Collector Curr ent I C (A)
ith
Ty
60
Ma xim um Powe r Dissipat io n P C (W)
40
80
Cut- off F req uency f T ( MH Z )
125C
200
0.5
(V C E =4V)
0.1
1.0
10
0.02
eT
5A
100
Cas
I C =10A
Cas
C (
I B =20mA

a. Part No.
b. Lot No.
10
C (
50mA
4
(V C E =4V)
125
10 0mA
j- a ( C/W)
mA
1 50 m A
15
200
12
3.0 +0.3
-0.1
A
A
A
m
A
0m 0m 0m
0m
50 60 50 40
30
7
0.65 +0.2
-0.1
5.450.1
B
16
2
3
1.05 +0.2
-0.1
21.40.3
20.0min
Tstg
6.00.2
2.1
30
External Dimensions MT-200
(Ta=25C)
Conditions
emp
160
VCBO
Symbol
se T
Unit
(Ca
Ratings
25C

Symbol
4.0max
LAPT
40
Without Heatsink
0
0.02
0.1
12
10
0.2
2
10
100
200
5
0
25
50
75
100
125
150
2SA1216
Ratings
Unit
VCBO
VCB=180V
100max
VEB=5V
100max
IC=25mA
180min
24.40.2
VCEO
180
IEBO
VEBO
V(BR)CEO
IC
17
hFE
VCE=4V, IC=8A
30min
IB
VCE(sat)
IC=8A, IB=0.8A
2.0max
PC
200(Tc=25C)
fT
VCE=12V, IE=2A
40typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
500typ
pF
55 to +150
hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)
2-3.20.1
7
21.40.3
IC
(A)
VB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
0.3typ
0.7typ
0.2typ
50mA
I B =20mA
0.8
1.0
125C
100
25C
30C
50
10
0.02
10 17
0.1
2.4
0.5 1
10 17
0.5
0.1
10
e T
emp
200
DC Cur rent Gain h F E
50
100
1000
2000
Time t(ms)
P c T a Derating
(V C E =12V)
200
10
m
10
0.2
2
10
100
300
nk
si
0.1
at
0
0.02
Without Heatsink
Natural Cooling
he
0.5
120
ite
fin
160
In
20
DC
10
ith
Collect or Cur ren t I C (A)
40
yp
M aximum Power Dissipa ti on P C (W)
50
60
Cu t-off Fre quen cy f T (MH Z )
DC Curr ent Gain h F E
Typ
0.6
(V C E =4V)
300
0.5
0.4
(V C E =4V)
0.1
0.2
10
0.02
e T
em
p)
Tem
p)
5A
0
100
I C =10A
j - a ( C/W)
10
Cas
Cas
100mA
15
C(
150mA
(V C E =4V)
17
125
2 00 mA
10
3 00 m
5A
1
A
00
m
A
5
1.
mA
3.0 +0.3
-0.1
5.450.1
C

a. Part No.
b. Lot No.
V CE ( sa t ) I B Characteristics (Typical)
15
0
40
0.65 +0.2
-0.1
1.05 +0.2
-0.1
RL
()
2
3
5.450.1
VCC
(V)
m
00
17
2.1
C(
Tstg
6.00.2
36.40.3
30
Conditions
ase
180
VCBO
(Ta=25C)
SymboI
C(C
Unit
25
Ratings
4.0max

Symbol
20.0min
LAPT
80
40
5
0
Without Heatsink
0
25
50
75
100
125
150
13
2SA1262
Ratings
Unit
ICBO
VCB=60V
100max
IEBO
VEB=6V
100max
V(BR)CEO
IC=25mA
60min
hFE
VCE=4V, IC=1A
40min
VCEO
60
VEBO
IC
10.20.2
VCE(sat)
IC=2A, IB=0.2A
0.6max
PC
30(Tc=25C)
fT
VCE=12V, IE=0.2A
15typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
90typ
pF
55 to +150
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
20
10
10
200
200
0.25typ
0.75typ
0.25typ
I B =5mA
0.5
0.1
0.5

(V C E =4V)
200
500
100
50
25C
100
30C
50
20
0.02
D C Cur r ent Gai n h F E
Typ
0.1
10
at
si
nk
M aximum Po wer Dissipat io n P C (W)
he
10
ite
Without Heatsink
Natural Cooling
fin
0.5
20
In
ith
0m
Collector Cur rent I C (A)
10
20
1000
P c T a Derating
1m
10
30
100
30
Typ
mp)
(Cas
e Tem
p)
emp
Time t(ms)
10
40
50
1.5
0.7
(V C E =12V)
60
1.0
Cut- off F req uency f T (M H Z )
125C
0.5
0.5
(V C E =4V)
0.1
e Te
1A
0
0.1
20
0.01
eT
I C =3A
2A
j- a ( C/W)
0.5
30C
10mA
1
Cas
20mA
1.0
(Cas
30mA
C (
40m A
(V C E =4V)
1.5
125
50m A

a. Part No.
b. Lot No.
1.4
4
2.5
B C E
RL
()
60m
1.35
2.5
VCC
(V)
0.65 +0.2
-0.1
0m
2.00.1
3.750.2
25C
Tstg
12.0min
IB
4.80.2
3.00.2
60
16.00.7
VCBO
External Dimensions MT-25(TO220)
(Ta=25C)
Conditions
Unit
8.80.2
Symbol
Ratings
Symbol
4.0max
10
Without Heatsink
0
0.005 0.01
0.05
0.1
0.5
Emitter C urrent I E (A)
14
0.1
2
2
5
10
50
100
25
50
75
100
125
150
2SA1294
ICBO
VCB=230V
100max
IEBO
VEB=5V
100max
IC=25mA
230min
V(BR)CEO
IC
15
hFE
VCE=4V, IC=5A
50min
IB
VCE(sat)
IC=5A, IB=0.5A
2.0max
PC
130(Tc=25C)
fT
VCE=12V, IE=2A
35typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
500typ
pF
55 to +150
hFE Rank O(50 to 100), Y(70 to 140)
19.90.3
VEBO
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
500
500
0.35typ
1.50typ
0.30typ
I B =20mA
5A
0
0.5
1.0
1.5

(V C E =4V)
200
200
0.5
25C
100
30C
50
10
0.02
5 10 15
Typ
50
0.1
0.5
10 15
0.5
0.1
10
he
at
si
nk
ite
Without Heatsink
Natural Cooling
fin
0.5
In
100
ith
DC
Ma ximum Po we r Dissipa ti on P C (W)
50
0.1
0
0.02
0.1
10
0.05
3
1000 2000
P c T a Derating
10
20
100
Time t(ms)
130
10
mp)
40
Ty
2.5
60
(V C E =12V)
40
Cut-o ff F requ ency f T (MH Z )
125C
0.1
(V C E =4V)
10
0.02
2.0
100
I C =10A
eTe
50mA
Cas
10
mp
)
emp
)
1 00 mA
(V C E =4V)
eTe
mA
200
15
Cas
0m
C (
30
10
1.4
125
mA
5.450.1
C
j- a ( C/W)
00
0.65 +0.2
-0.1

a. Part No.
b. Lot No.
A
5
Collector-Emitter Saturation Voltage V C E (sa t) (V )
3
.0A
2
.0
A
.0
1
2
3
IC
(A)
5A
3.20.1
5.450.1
RL
()
.
1
2.00.1
1.05 +0.2
-0.1
VCC
(V)
15
4.80.2
seT
Tstg
15.60.4
9.6
1.8
5.00.2
Unit
(Ca
230
Ratings
C (
VCEO
Conditions
30
230
(Ta=25C)
Symbol
2.0
VCBO
4.0
Unit
25C
Ratings
Symbol
4.0max
20.0min
LAPT
Without Heatsink
10
100
300
3.5
0
25
50
75
100
125
150
15
2SA1295
Ratings
Unit
ICBO
VCB=230V
100max
36.40.3
24.40.2
VEB=5V
100max
IC=25mA
230min
VCEO
230
IEBO
VEBO
V(BR)CEO
IC
17
hFE
VCE=4V, IC=5A
50min
IB
VCE(sat)
IC=5A, IB=0.5A
2.0max
PC
200(Tc=25C)
fT
VCE=12V, IE=2A
35typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
500typ
pF
55 to +150
hFE Rank O(50 to 100), Y(70 to 140)
2-3.20.1
21.40.3
20.0min
Tstg
a
b
2
3
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
500
500
0.35typ
1.50typ
0.30typ
0mA
200
mA
1 00 mA
5
50mA
I B =20mA
0
15
1
I C =10A
5A
0
0.5
1.0
1.5

(V C E =4V)
200
200
0.5
25C
100
50
30C
10
0.02
10 17
DC Cur rent Gain h FE
Typ
50
0.8
0.1
0.5
1.6
2.4
3.2
10 17
2
0.5
0.1
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
60
200
40
16
10
0.05
3
10
100
300
nk
0.1
si
0
0.02
at
Without Heatsink
Natural Cooling
0.1
he
0.5
120
ite
20
fin
160
In
Ty
ith
40
10
10
125C
0.1
(V C E =4V)
10
0.02
2.0
100
10
p)
30
10
mA

a. Part No.
b. Lot No.
17
em
0
50
(V C E =4V)
eT
A
1.0
125
C (
Cas
25C
.5
1
j- a ( C/W)
15
0A
Collector-Emitter Saturation Voltage V C E (s a t) (V )
A
3
.0
.
2
3.0 +0.3
-0.1
5.450.1
B
VCC
(V)
17
0.65 +0.2
-0.1
1.05 +0.2
-0.1
6.00.2
2.1
mp)
Conditions
e Te
230
(Ta=25C)
Symbol
Cas
Unit
VCBO
(Ta=25C)
Ratings
C (
Symbol
30
Absolute maximum ratings
Application : Audio and General
4.0max
LAPT
80
40
5
0
Without Heatsink
0
25
50
75
100
125
150
2SA1303
ICBO
VCB=150V
100max
IEBO
VEB=5V
100max
IC=25mA
150min
VEBO
V(BR)CEO
IC
14
hFE
VCE=4V, IC=5A
50min
IB
VCE(sat)
IC=5A, IB=0.5A
2.0max
VCE=12V, IE=2A
50typ
MHz
VCB=10V, f=1MHz
400typ
pF
PC
125(Tc=25C)
fT
Tj
150
COB
55 to +150
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
500
500
0.25typ
0.85typ
0.2typ
0.2
0.4
0.6
0.8
(V C E =4V)
200
25C
100
30C
50
30
0.02
5 10 14
Typ
50
0.1
0.5
emp
p)
Tem
eT
Cas
C (
10 14
0.5
0.1
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
Co lle ctor Cu rr ent I C (A)
Maxim um Power Dissip ation P C (W)
200
nk
100
si
10
at
0.2
3
he
10
ite
fin
0.1
Without Heatsink
Natural Cooling
In
100
ith
0.5
0
0.02
20
40
0m
Ty
1m
10
60
130
40
10
80
10
Cut- off F req uency f T (MH Z )
125C
200
0.5
1.0
(V C E =4V)
0.1
se
5A
20
0.02
(Ca
I C =10A
100
10
30
I B =20mA
25
50mA
4
14
125
10 0mA
1.4
(V C E =4V)
1 50 m A
5.450.1
C

a. Part No.
b. Lot No.
j- a ( C/W)
00
6 mA
00
m
A
mA
0.65 +0.2
-0.1
200
2
3
RL
()
12
3.20.1
5.450.1
VCC
(V)
A
A
m
m
mA
00
00 00
3
5 4
2.00.1
1.05 +0.2
-0.1
4.80.2
p)
Tstg
Tem
150
ase
VCEO
15.60.4
9.6
C (C
150
1.8
Unit
5.00.2
Ratings
2.0
Conditions
VCBO
(Ta=25C)
Symbol
Unit
4.0
(Ta=25C)
Ratings
19.90.3
Symbol
4.0max
20.0min
LAPT
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
17
2SA1386/1386A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A)
180
V(BR)CEO
180min
160min
IC=25mA
IB
hFE
VCE=4V, IC=5A
50min
PC
130(Tc=25C)
VCE(sat)
IC=5A, IB=0.5A
2.0max
Tj
Tstg
150
fT
VCE=12V, IE=2A
40typ
MHz
COB
VCB=10V, f=1MHz
500typ
pF
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.3typ
0.7typ
0.2typ
3 00 m A
200mA
10
150mA
100mA
5
50mA
I B =20mA
15
0.2
0.4
0.6
0.8
5 10 15
125C
100
25C
30C
50
20
0.02
0.1
0.5
10 15
1
0.5
0.1
10
(V C E =4V)

0.5
1.0
Typ
0.1
200
10
0.02
10
I C =10A
(V C E =4V)
100
(V C E =4V)
5A
1.8
300
1.4

a. Part No.
b. Lot No.
C (
0
40
125
5.450.1
B
00
m
00
5.450.1
0.65 +0.2
-0.1
15
2
3
1.05 +0.2
-0.1
RL
()
2.0
VCC
(V)
3.20.1
55 to +150
mp)
e Te
15
(Cas
IC
100max
VEB=5V
p)
IEBO
mp)
2.00.1
30C
4.80.2
5.00.2
160
VCB=
VEBO
15.60.4
9.6
em
100max
eT
180
ICBO
100max
e Te
160
Cas
VCEO
180
(Cas
160
Conditions
Symbol
25C
VCBO
Unit
4.0
2SA1386 2SA1386A
j - a (C /W )
Symbol
(Ta=25C)
Ratings
Unit
2SA1386A
2SA1386
19.90.3
Ratings
4.0max
Absolute maximum ratings (Ta=25C) Electrical Characteristics
20.0min
LAPT
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
130
40
10
DC
0.1
18
10
0.05
3
10
50
100
2
200
nk
1
0
0.02
si
0.1
at
1.2SA1386
2.2SA1386A
he
Without Heatsink
Natural Cooling
ite
1
0.5
100
fin
20
In
Collecto r Cur ren t I C ( A)
ith
Ty
Cut-o ff Fr eque ncy f T (MH Z )
10
40
ms
Ma xim um Powe r Dissipation P C ( W)
60
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SA1488/1488A
ICBO
VCB=
60
VEBO
IEBO
IC
V(BR)CEO
IB
hFE
PC
25(Tc=25C)
VCE(sat)
Tj
150
fT
55 to +150
COB
VCB=10V, f=1MHz
Tstg
VEB=6V
A
V
80
100max
IC=25mA
60min
80min
40min
IC=2A, IB=0.2A
0.5max
VCE=12V, IE=0.2A
15typ
MHz
90typ
pF
3.30.2
a
b
VCE=4V, IC=1A
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
12
10
200
200
0.25typ
0.75typ
0.25typ
10mA
1
I B =5mA
0.5
I C =3A
1A
0
0.1
0.5
0.1
0.5

(V C E =4V)
200
500
100
50
Typ
25C
100
30C
50
20
0.02
0.1
10
30
100ms
50
10
1m
10
M aximu m Power Dissi pation P C (W)
20
1000
P c T a Derating
10
30
100
Time t(ms)
Typ
1.5
0.7
(V C E =12V)
40
1.0
Cu t-off Fre quen cy f T ( MH Z )
125C
60
0.5
(V C E =4V)
0.5
0.1
2A
20
0.01
eT
emp
)
e Te
mp)
(Cas
e Tem
p)
20mA
1.0
Cas
30mA
(Cas
40m A
C (
50m A
(V C E =4V)
1.5
125
25C
60m
j - a ( C/W)
0m

a. Part No.
b. Lot No.
B C E
2.40.2
2.20.2
VCC
(V)
4.00.2
0.80.2
80
4.20.2
2.8 c0.5
0.2
80
60
10.10.2
3.9
60
VCEO
Unit
30C
VCBO
Conditions
Symbol
Unit
External Dimensions FM20 (TO220F)
(Ta=25C)
Ratings
2SA1488
2SA1488A
100max
100max
8.40.2
16.90.3
Ratings
Symbol
2SA1488 2SA1488A
13.0min
DC
1
0.5
Without Heatsink
Natural Cooling
0.1
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
W
ith
In
150x150x2
1 00x 1 0
10
0x
fin
ite
he
at
si
nk
50x50x2
Without Heatsink
2
0
0.005 0.01
0.05
0.05
0.1
0.5
10
50
100
25
50
75
100
125
150
19
2SA1492
100max
IEBO
VEB=6V
100max
IC=50mA
180min
V(BR)CEO
15
hFE
VCE=4V, IC=3A
50min
VCE(sat)
IC=5A, IB=0.5A
2.0max
PC
130(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
500typ
pF
55 to +150

5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.6typ
0.9typ
0.2typ
I B =20mA
I C =10A
0.5
1.0
1.5

(V C E =4V)
200
100
50
125C
25C
100
30C
50
20
0.02
5 10 15
0.1
0.5
10
0.1
10
P c T a Derating
100
200
nk
10
si
0.1
3
Without Heatsink
Natural Cooling
at
0.5
he
100
ite
0m
fin
10
In
10
1000 2000
ith
20
100
Time t(ms)
10
Typ
20
0.5
M aximum Power Dissipa ti on P C ( W)
3m
10 15
130
10
40
30
(V C E =12V)
0.1
0
0.02
Typ
Cut- off F re quen cy f T (MH Z )
300
(V C E =4V)
0.5
2.0
0.1
5A
10
0.02
mp)
Temp
)
50mA
10
e Te
0 .1 A
Cas
C (
0 .2
10
125
4A
(V C E =4V)
15
j - a (C/W)
0.
1.4
6A

a. Part No.
b. Lot No.

0.
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
15
2
3
1.05 +0.2
-0.1
3.20.1
IB
Tstg
2.00.1
Temp)
IC
4.80.2
(Case
VEBO
15.60.4
9.6
1.8
VCB=180V
5.00.2
ICBO
19.90.3
30C
180
Unit
(Case
VCEO
Ratings
25C
180
Conditions
2.0
VCBO
(Ta=25C)
Symbol
4.0
Unit
4.0max
(Ta=25C)
Ratings
Symbol
20.0min
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SA1493
200
VCBO
Conditions
Ratings
Unit
ICBO
VCB=200V
100max
VEB=6V
100max
IC=50mA
200min
VCEO
200
IEBO
VEBO
V(BR)CEO
IC
15
hFE
VCE=4V, IC=5A
50min
IB
VCE(sat)
IC=10A, IB=1A
3.0max
VCE=12V, IE=0.5A
20typ
MHz
VCB=10V, f=1MHz
400typ
pF
PC
150(Tc=25C)
fT
Tj
150
COB
55 to +150
Tstg
(Ta=25C)
Symbol
6.00.2
36.40.3
24.40.2
2.1
2-3.20.1
9
7
Unit
21.40.3
Ratings
a
b
2
4.0max
Symbol
20.0min
5.450.1
B
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
500
500
0.3typ
0.9typ
0.2typ
10A
5A
0
Collector-Emi tter Voltage V C E (V)
200
100
50
30C
50
20
0.02
5 10 15
0.1
0.5
10 15
0.1
10
s
10
0m
s 10ms
2000
si
nk
300
80
at
100
he
10
ite
Without Heatsink
Natural Cooling
fin
120
In
1000
P c T a Derating
0.1
10
100
Time t(ms)
ith
Co lle ctor Cu rr ent I C ( A)
10
0.5
emp)
0.5
10
(CaseT
160
3m
Typ
50
20
20
30
(V C E =12V)
0.1
25C
100
0
0.02
125C
Cut- off F re quen cy f T ( MH Z )
Typ
(V C E =4V)
300
0.5
(V C E =4V)
0.1
10
0.02
I C =15A
30C
eTe
mp)
Temp
)
I B =5 0m A
5
10
Cas
1 00 mA
(Case
C (
200m
10
125
mA
(V C E =4V)
25C
400
15
mA
j- a (C /W )
0
60

a. Part No.
b. Lot No.
Maximu m Power Dissip ation P C (W)
5A
1.
3.0 +0.3
-0.1
5.450.1
15
0.65 +0.2
-0.1
1.05 +0.2
-0.1
40
5
0
Without Heatsink
0
25
50
75
100
125
150
21
2SA1494
ICBO
Ratings
Unit
VCB=200V
100max
36.40.3
24.40.2
VEB=6V
100max
IC=50mA
200min
VCEO
200
IEBO
VEBO
V(BR)CEO
IC
17
hFE
VCE=4V, IC=8A
50min
IB
VCE(sat)
IC=10A, IB=1A
2.5max
PC
200(Tc=25C)
fT
VCE=12V, IE=1A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
500typ
pF
55 to +150
hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)
2-3.20.1
a
b
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.6typ
0.9typ
0.2typ
50mA
I B =20mA
10A
(V C E =4V)
50
25C
100
30C
50
20
0.02
10 17
0.1
0.5
10 17
10
3m
10ms
100
300
nk
10
si
at
0.1
10
he
Without Heatsink
Natural Cooling
120
ite
fin
160
In
ith
10
0.5
1000
10
100
P c T a Derating
0m
20
Time t(ms)
10
Typ
0.1
200
20
0.1
0.5
50
30
Cut- off Fr equ ency f T (MH Z )
(V C E =12V)
22
Typ
100
0
0.02

125C
200
0.5
(V C E =4V)
300
5A
0.1
I C =15A
10
0.02
10
Temp
1 00 m A
e Te
mp)
Temp
)

a. Part No.
b. Lot No.
15
(Cas
200m
10
(V C E =4V)
125C
0mA
40
17
j - a (C /W)
A
.5
60
15
mA
3.0 +0.3
-0.1

3
1A
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
17
2
3
1.05 +0.2
-0.1
21.40.3
20.0min
Tstg
6.00.2
2.1
(Case
(Ta=25C)
Conditions
30C
200
VCBO
Symbol
(Case
Unit
25C
Ratings
4.0max

Symbol
80
40
5
0
Without Heatsink
0
25
50
75
100
125
150
2000
2SA1567
hFE
50min
VCE=1V, IC=6A
50min
IC=6A, IB=0.3A
0.35max
VCE(sat)
PC
35(Tc=25C)
fT
VCE=12V, IE=0.5A
40typ
MHz
150
COB
VCB=10V, f=1MHz
330typ
pF
55 to +150
Tstg
13.0min
IB
Tj
1.350.15
1.350.15
0.5
10
100
1000
(V C E =1V)
500
125C
Typ
100
50
25C
30C
100
50
30
0.02
10
0.1
10
0.4
0.3
10
1000
fin
ite
he
150x150x2
at
si
nk
Without Heatsink
Natural Cooling
20
In
0.5
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
30
ith
0.05
3
100
0m
DC
0.1
12
1.2
P c T a Derating
10
10
Typ
20
1.0
Time t(ms)
Maximu m Power Dissi pation P C (W)
1m
30
0.8
0.5
30
40
0.6
35
10
Cut- off Fr equ ency f T (M H Z )
p)
50
Tem
(V C E =12V)
0.2
0
0.05 0.1
500
3000
(V C E =1V)
Base Current I B (mA)
0.1
30
0.02
se
12A
5mA
9A
10mA
2
1.0
6A
20mA
10
3A
(V C E =1V)
12
1.5
1A
40mA
I C=
60mA
0.2typ
(Ca
10 0m A
0.4typ
I B=
10
0m
mA
00
15
0.4typ
12
120
120

a. Part No.
b. Lot No.
B C E
125
10
tf
(s)
tstg
(s)
j- a ( C/W)
24
ton
(s)
IB2
(mA)
IB1
(mA)
VBB2
(V)
VBB1
(V)
2.40.2
2.20.2
IC
(A)
RL
()
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

VCC
(V)
3.30.2
a
b
mp)
12
100max
4.20.2
2.8 c0.5
e Te
IC
VEB=6V
IC=25mA
10.10.2
(Cas
V(BR)CEO
4.00.2
IEBO
100max
0.80.2
VCB=50V
3.9
50
VEBO
Conditions
mp)
VCEO
Symbol
30C
ICBO
e Te
(Cas
50
Unit
25C
Unit
VCBO
Symbol
(Ta=25C)
Ratings
0.2
Ratings
8.40.2
Application : DC Motor Driver, Chopper Regulator and General Purpose
16.90.3
LOW VCE (sat)
100x100x2
10
50x50x2
Without Heatsink
10
50
100
2
0
25
50
75
100
125
150
23
2SA1568
IB
mA
60min
hFE
VCE=1V, IC=6A
50min
VCE(sat)
IC=6A, IB=0.3A
0.35max
IECO=10A
2.5max
16.90.3
60max
35(Tc=25C)
VFEC
Tj
150
fT
VCE=12V, IE=0.5A
40typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
330typ
pF
Tstg
3.9
PC
1.350.15
1.350.15
0
7 10
100
1000
(V C E =1V)
300
125C
100
25C
30C
100
10
10
2
0.02
10
0.1
10
p)
Tem
0.3
se
10
1000
ite
he
150x150x2
at
si
nk
Without Heatsink
Natural Cooling
20
fin
0.5
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
30
In
0m
0.05
3
100
ith
24
0.5
DC
0.1
10
1.2
P c T a Derating
20
1.0
Time t(ms)
10
10
Typ
30
0.8
35
1m
40
0.6
10
0.4
30
0.2
(V C E =12V)
50
Typ
0
0.05 0.1
3000
300
(V C E =1V)
0.1
2
0.02
I B=
0.5
9A
10mA
3 A
20mA
1.0
1A
10
6A
40mA
(V C E =1V)
12
1.4
12
60mA
I C=
0.2typ
1 00 mA
10
0mA
00
mA
15
0.4typ
12
0.4typ
120
120
(Ca
10
B C E
125

a. Part No.
b. Lot No.
tf
(s)
tstg
(s)
24
ton
(s)
IB2
(mA)
IB1
(mA)
VBB2
(V)
VBB1
(V)
2.40.2
2.20.2
j - a (C /W)
IC
(A)
RL
()
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

VCC
(V)
3.30.2
a
b
mp)
IC
VEB=6V
IC=25mA
e Te
V(BR)CEO
4.20.2
2.8 c0.5
(Cas
IEBO
10.10.2
4.00.2
6
12
+
0.80.2
60
VEBO
100max
mp)
VCEO
VCB=60V
30C
ICBO
e Te
Unit
(Cas
60
Ratings
25C
VCBO
(Ta=25C)
Conditions
0.2
Symbol
Unit
Application : DC Motor Driver, Chopper Regulator and General Purpose
Ratings
Symbol
Equivalent
curcuit
8.40.2
13.0min
Built-in Diode at CE
Low VCE (sat)
( 250 )
100x100x2
10
50x50x2
Without Heatsink
10
50
100
2
0
25
50
75
100
125
150
2SA1667/1668
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382)
VCB=
VEBO
IEBO
IC
V(BR)CEO
10max
10max
150
200
10max
VEB=6V
150min
IC=25mA
200min
hFE
VCE=10V, IC=0.7A
60min
PC
25(Tc=25C)
VCE(sat)
IC=0.7A, IB=0.07A
1.0max
Tj
150
fT
VCE=12V, IE=0.2A
20typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
60typ
pF
Tstg
3.30.2
a
b
IB
4.20.2
2.8 c0.5
4.00.2
10.10.2
0.80.2
ICBO
Unit
0.2
200
Conditions
Symbol
3.9
150
Unit
(Ta=25C)
Ratings
2SA1667
2SA1668
8.40.2
VCEO
16.90.3
Ratings
Symbol
2SA1667 2SA1668
VCBO
150
200
13.0min
Application : TV Vertical Output, Audio Output Driver and General Purpose
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.40.2
2.20.2
100
0.4
10
100
(V C E =10V)
400
100
0.1
Typ
25C
30C
100
30
0.01
0.1
0.5
Temp)
at
0x
he
si
nk
100
1 00x 1 0
10
ite
10
150x150x2
fin
In
Without Heatsink
Natural Cooling
1.2SA1667
2.2SA1668
20
ith
M aximu m Power Dissipat io n P C (W)
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
ms
0.01
1
1000
P c T a Derating
0.1
10
1.2
100
1m
20
5m
20
10
25
40
1.0
Time t(ms)
30
0.8
Typ
0.6
(V C E =12V)
0.1
0.4
125C
0.2
400
50
(V C E =10V)
0
0.01
1000
40
0.01
0.8
0.4
I C =2A
1.2
1A
0 .5A
1.6
(Case
10
30C
I B =5mA/Step
(V C E =10V)
Temp
1.2
mp)
1.6
0.5typ
(Case
0.8
1.5typ
B C E
e Te
2.0
0.4typ

a. Part No.
b. Lot No.
tf
(s)
0m
100
tstg
(s)
(Cas
10
ton
(s)
IB2
(mA)
25C
20
IB1
(mA)
125C
20
VBB2
(V)
VBB1
(V)
IC
(A)
RL
()
j- a (C /W )
VCC
(V)
50x50x2
Without Heatsink
2
300
25
50
75
100
125
150
25
2SA1673
IEBO
VEB=6V
10max
V(BR)CEO
15
hFE
180min
IC=50mA
VCE=4V, IC=3A
50min
VCE(sat)
IC=5A, IB=0.5A
2.0max
PC
85(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
150
COB
VCB=10V, f=1MHz
500typ
pF
55 to +150
Tj
Tstg
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.6typ
0.9typ
0.2typ
50mA
I B =20mA
I C =10A
0.5
1.0
1.5

(V C E =4V)
200
Typ
100
50
125C
25C
100
30C
50
20
0.02
5 10 15
0.1
0.5
10 15
10
100
P c T a Derating
0m
10
100
200
nk
0.1
3
si
10
at
0.2
he
Without Heatsink
Natural Cooling
ite
60
fin
80
In
0.5
1000 2000
Time t(ms)
ith
10
26
0.1
20
0.5
M aximu m Power Dissip ation P C (W)
10
10
10
Typ
100
3m
0.1
40
30
(V C E =12V)
0
0.02
300
(V C E =4V)
0.5
2.0
0.1
5A
10
0.02
10
mp)
Temp
)
0 .1 A
(V C E =4V)
e Te
15
Cas
0 .2
10

a. Part No.
b. Lot No.
C (
3.35
125
0.4
0.65 +0.2
-0.1
1.5
6A
4.4
j - a ( C/W)
0.
5.450.1
1.5
RL
()
0.8
2.15
1.05 +0.2
-0.1
VCC
(V)
15
1.75
5.450.1
3.45 0.2
3.30.2
a
b
16.2
IB
5.50.2
3.0
IC
15.60.2
23.00.3
VEBO
0.80.2
10max
5.5
VCB=180V
1.6
180
ICBO
3.3
VCEO
Unit
p)
Ratings
ase Tem
180
External Dimensions FM100(TO3PF)
(Ta=25C)
Conditions
Symbol
30C (C
VCBO
(Case
Unit
25C
Ratings
Symbol
9.50.2
40
20
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SA1693
10max
IEBO
VEB=6V
10max
V(BR)CEO
IC=50mA
80min
hFE
50min
VCE=4V, IC=2A
VCE(sat)
IC=2A, IB=0.2A
1.5max
60(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
150typ
pF
55 to +150
20.0min
PC
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
0.3
0.3
0.18typ
1.10typ
0.21typ
20mA
I B =10mA
4A
2A
0
0.5
1.0
(V C E =4V)
300
100
50
125C
Typ
25C
30C
100
50
30
0.02
5 6
0.1
0.5
5 6
0.5
0.3
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
60
10
10
Typ
ite
he
at
si
nk
fin
Without Heatsink
Natural Cooling
40
In
1
0.5
ith
DC
10
100ms
5
20
20
30
Cut -off Fre quen cy f T (M H Z )
300
(V C E =4V)
0.5
1.5
0.1
I C =6A
30
0.02
30mA
e Te
mp)
e Te
mp)
50mA
Cas
C (
8 0m A
125
00 m A
(V C E =4V)
mA
0
15
1.4
j- a ( C/W)

a. Part No.
b. Lot No.

0m
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
2
3
1.05 +0.2
-0.1
3.20.1
IB
Tstg
Temp
IC
2.00.1
(Case
VEBO
4.80.2
30C
80
(Cas
VCEO
15.60.4
9.6
25C
1.8
VCB=80V
80
5.00.2
ICBO
VCBO
2.0
Unit
Symbol
(Ta=25C)
Ratings
Unit
4.0
Conditions
Ratings
19.90.3
Symbol
4.0max
20
Without Heatsink
0
0.02
0.05 0.1
0.5
5 6
0.1
5
10
50
100
3.5
0
25
50
75
100
125
150
27
2SA1694
10max
IEBO
VEB=6V
10max
V(BR)CEO
hFE
120min
IC=50mA
50min
VCE=4V, IC=3A
VCE(sat)
IC=3A, IB=0.3A
1.5max
80(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
300typ
pF
55 to +150
20.0min
PC
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.4
0.4
0.14typ
1.40typ
0.21typ
V CE ( s a t ) I B Characteristics (Typical)
I B =10mA
4A
(V C E =4V)
300
100
50
125C
Typ
0.5
0.5
25C
100
30C
50
30
0.02
0.1
0.5
1.5
5 8
0.5
0.3
10
100
1000
Time t(ms)
1.0
200
0.1
(V C E =4V)
30
0.02
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
mp)
2A
0
I C =8A
e Te
(Cas
30C
25mA
mp)
50mA
e Te
7 5m A
Cas
mA
C (
100
(V CE =4V)
125
1.4
5.450.1
C
j - a ( C/W)
A
m
50
A
0m
0.65 +0.2
-0.1

a. Part No.
b. Lot No.
3
A
2
3
VCC
(V)
0m
3.20.1
5.450.1
2.00.1
1.05 +0.2
-0.1
4.80.2
IB
Tstg
mp)
IC
e Te
VEBO
(Cas
120
15.60.4
9.6
25C
VCEO
19.90.3
1.8
VCB=120V
120
5.00.2
ICBO
VCBO
2.0
Unit
Symbol
4.0
Ratings
Unit
(Ta=25C)
Conditions
Ratings
4.0max

Symbol
P c T a Derating
(V C E =12V)
80
20
DC
he
40
at
si
nk
Without Heatsink
Natural Cooling
ite
0.5
fin
60
In
10
100ms
ith
Co lle ctor Cu rren t I C (A)
Typ
20
10
10
30
20
Without Heatsink
0
0.02
0.05 0.1
0.5
28
0.1
5
10
50
100
200
3.5
0
25
50
75
100
12 5
150
2SA1695
10max
IEBO
VEB=6V
10max
140min
IC=50mA
50min
VCE=4V, IC=3A
VCE(sat)
IC=5A, IB=0.5A
0.5max
100(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
400typ
pF
55 to +150
20.0min
PC
Tstg
3.20.1
IB
2
3
1.05 +0.2
-0.1
5.450.1
5.450.1
B
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
0.5
0.5
0.17typ
1.86typ
0.27typ
10
100
mA
7 5m A
50mA
4
25mA
I B =10mA
I C =10A
0.5
1.0
1.5
(V C E =4V)
200
Typ
50
125C
100
25C
100
30C
50
30
0.02
10
0.1
0.5
10
3
1
0.5
0.1
10
100
1000 2000
Time t(ms)
1.5
200
P c T a Derating
(V C E =12V)
100
0.1
3
10
50
100
200
nk
10
si
50
at
0.1
he
0
0.02
ite
ms
Without Heatsink
Natural Cooling
fin
10
0.5
In
ith
3m
10
DC
0m
Typ
10
20
Co lle ctor Cu rren t I C ( A)
10
Maximu m Power Diss ip ation P C (W)
30
30
2.0
(V C E =4V)
0.5
0.1
5A
30
0.02
p)
0m
Tem
15
se
(Ca
(V C E =4V)
125
j- a ( C/W)
00
A
0m
A
0m
1.4
10
mA

a. Part No.
b. Lot No.
0.65 +0.2
-0.1
hFE
Temp
V(BR)CEO
2.00.1
(Case
10
4.80.2
30C
IC
mp)
VEBO
e Te
140
(Cas
VCEO
15.60.4
9.6
25C
1.8
VCB=140V
140
5.00.2
ICBO
VCBO
2.0
Unit
Symbol
(Ta=25C)
Ratings
Unit
4.0
Conditions
Ratings
19.90.3
Symbol
4.0max
3.5
0
Without Heatsink
0
25
50
75
100
125
150
29
2SA1725
50min
VCE=4V, IC=2A
IB
VCE(sat)
IC=2A, IB=0.2A
0.5max
PC
30(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
150
COB
VCB=10V, f=1MHz
150typ
pF
Tstg
55 to +150
1.350.15
1.350.15
2.54

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
0.3
0.3
0.18typ
1.10typ
0.21typ
20mA
I B =10mA
1
1
I C =6A
2A
0
0.5
1.0

(V C E =4V)
300
Typ
100
50
125C
300
0.5
25C
30C
100
50
30
0.02
5 6
0.1
1.5
0.5
5
0.5
0.4
1
5 6
10
100
1000 2000
Time t(ms)
(V C E =4V)
0.5
1.5
0.1
4A
30
0.02
p)
30mA
Tem
se
50mA
(Ca
8 0m A
125
1 00 m
(V CE =4V)
mA
j- a ( C/W)
0
15

a. Part No.
b. Lot No.
B C E
V CE ( s a t ) I B Characteristics (Typical)
m
00
2.40.2
2.20.2
VCC
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
mp)
Tj
3.30.2
a
b
e Te
hFE
4.00.2
80min
0.80.2
10max
0.2
IC
VEB=6V
IC=25mA
4.20.2
2.8 c0.5
(Cas
V(BR)CEO
3.9
IEBO
10.10.2
30C
80
VEBO
10max
emp
VCEO
VCB=80V
se T
ICBO
(Ca
Unit
25C
80
Ratings
16.90.3
Unit
VCBO
External Dimensions FM20(TO220F)
(Ta=25C)
Conditions
13.0min
Symbol
Ratings
8.40.2

Symbol
P c T a Derating
(V C E =12V)
30
10
10
100ms
si
nk
0.1
at
Without Heatsink
Natural Cooling
he
0.5
ite
20
fin
10
DC
In
20
ith
Collecto r Cur ren t I C (A)
Cut -off Fre quen cy f T ( MH Z )
Typ
20
30
10
Without Heatsink
2
0
0.02
0.05 0.1
0.5
30
5 6
0.05
3
10
50
100
25
50
75
100
125
150
2SA1726
VCB=80V
10max
IEBO
VEB=6V
10max
V(BR)CEO
IC=25mA
80min
hFE
50min
VCE=4V, IC=2A
IB
VCE(sat)
IC=2A, IB=0.2A
0.5max
PC
50(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
150typ
pF
55 to +150

2.5
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
0.3
0.3
0.18typ
1.10typ
0.21typ
I B =10mA
I C =6A
4A
2A
0
0.5
1.0
(V C E =4V)
300
50
5 6
125C
100
25C
30C
100
50
30
0.02
0.1
0.5
mp)
1.5
5 6
0.5
0.4
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
50
10
10
100ms
Typ
0.5
5 6
0.05
3
10
50
100
nk
0.05 0.1
si
0
0.02
at
0.1
he
Without Heatsink
Natural Cooling
30
ite
0.5
fin
40
In
10
DC
ith
20
Ma xim um Powe r Dissipation P C (W)
20
30
Cu t-of f Fr eque ncy f T (MH Z )
Typ
300
0.5
0.5
(V C E =4V)
0.1
1.5
30
0.02
e Te
(Cas
20mA
p)
30mA
Tem
50mA
(Ca
8 0m A
125
1 00 m
(V CE =4V)
j- a ( C/ W)
Collector-Emitter Saturation Voltage V C E (s at) (V)
m
50
1.4

a. Part No.
b. Lot No.
se
A
2.5
B C E
VCC
(V)
0m
1.35
0.65 +0.2
-0.1
30C
Tstg
3.750.2
IC
emp
VEBO
2.00.1
se T
80
4.80.2
(Ca
VCEO
10.20.2
25C
3.00.2
ICBO
80
16.00.7
Unit
VCBO
(Ta=25C)
8.80.2
Symbol
Ratings
Unit
4.0max
Conditions
Ratings
Symbol
12.0min
20
10
2
0
Without Heatsink
0
25
50
75
100
1 25
150
31
2SA1746
LOW VCE (sat)

Silicon PNP Epitaxial Planar Transistor
IEBO
VEB=6V
10max
V(BR)CEO
IC=25mA
50min
12(Pulse20)
hFE
50min
VCE=1V, IC=5A
IB
VCE(sat)
IC=5A, IB=80mA
0.5max
PC
60(Tc=25C)
VBE(sat)
IC=5A, IB=80mA
1.2max
Tj
150
fT
VCE=12V, IE=1A
25typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
400typ
pF
3.3
3.0
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
20
10
80
80
0.5typ
0.6typ
0.3typ
I B =10mA
3A
0
3
10
100
(V C E =1V)
500
100
125C
Typ
25C
30C
100
50
0.03
10
p)
)
mp)
eTe
0.5
0.1
0.5
1.0
1.5
10
4
0.5
0.2
10
100
1000
Time t(ms)
P c T a Derating
(V C E =12V)
40
500
1000
(V C E =1V)
0.5
em
5A
1A
0.1
I C =10A
50
0.03
(Cas
0.5
30C
1.0
seT
30m A
10
(Ca
(V C E =1V)
50mA
125

a. Part No.
b. Lot No.
12
1.5
j - a ( C/W)
70mA
3.35
1.5
10
100 mA
4.4
0.65 +0.2
-0.1
5.450.1
1.5
RL
()
12mA
0.8
2.15
1.05 +0.2
-0.1
VCC
(V)
12
1.75
5.450.1
3.30.2
a
b
emp
Tstg
3.45 0.2
seT
VEBO
5.50.2
(Ca
50
15.60.2
25C
VCEO
0.80.2
5.5
10max
1.6
VCB=70V
70
9.50.2
ICBO
VCBO
23.00.3
Unit
Symbol
(Ta=25C)
Ratings
Unit
IC
Conditions
Ratings
Symbol
16.2
Application : Chopper Regulator, Switch and General Purpose
60
30
10
s
at
si
20
nk
Collector Curre nt I C (A)
he
Without Heatsink
Natural Cooling
ite
fin
10
40
In
20
ith
Typ
10
1m
10
30
Without Heatsink
0
0.1
1
32
10
0.3
3
10
50
100
3.5
0
25
50
75
100
125
150
2SA1859/1859A
V(BR)CEO
IC=10mA
150min
180min
60 to 240
hFE
VCE=10V, IC=0.7A
PC
20(Tc=25C)
VCE(sat)
IC=0.7A, IB=70mA
1.0max
Tj
150
fT
VCE=12V, IE=0.7A
60typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
30typ
pF
Tstg
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
20
20
10
100
100
0.5typ
1.0typ
0.5typ
0
2
10
10
50 100
(V C E =4V)
300
125C
Typ
100
25C
100
30C
50
0.01
mp)
0.5
0.1
0.5
7
5
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
20
nk
si
10
at
50 100 200
he
10
ite
1
5
fin
0.01
1
Without Heatsink
Natural Cooling
1.2SA1859
2.2SA1859A
In
0.5
ith
0.1
0.5
0m
0.1
0.5
20
0.05
ms
40
10
60
0
0.01
Typ
1m
10
80
100
300
0.5
500 1000
(V C E =4V)
0.1
eTe
1A
50
0.01
Cas
I C =2A
0.5A
j - a ( C/W)
C (
I B =5mA
125
(V C E =4V)
10 mA
A
0m
A
m
0m
00
2.40.2

a. Part No.
b. Lot No.
B C E
5mA
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.20.2
VCC
(V)
1.350.15
2.54
4.00.2
3.9
IB
3.30.2
a
b
p)
aseTem
10max
30C (C
IC
180
VEB=6V
p)
IEBO
0.80.2
150
VCB=
eTem
4.20.2
2.8 c0.5
(Cas
180
VEBO
10.10.2
10max
ICBO
25C
150
Unit
8.40.2
VCEO
180
Conditions
16.90.3
150
Symbol
13.0min
VCBO
Unit
(Ta=25C)
Ratings
2SA1859 2SA1859A
0.2

Ratings
Symbol
2SA1859 2SA1859A
Application : Audio Output Driver and TV Velocity-modulation
2
0
Without Heatsink
0
25
50
75
100
125
150
33
2SA1860
VCB=150V
100max
IEBO
VEB=5V
100max
IC=25mA
150min
VCE(sat)
fT
150
COB
55 to +150
Tstg
IC=5A, IB=500mA
2.0max
VCE=12V, IE=2A
50typ
MHz
VCB=10V, f=1MHz
400typ
pF
3.0
80(Tc=25C)
3.3
PC
3.30.2
a
b
1.75
1.05 +0.2
-0.1
5.450.1

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
500
500
0.25typ
0.85typ
0.2typ
I B =20mA
0.2
0.4
0.6
0.8
(V C E =4V)
200
200
Typ
50
25C
100
30C
50
30
0.02
10 14
0.1
p)
Tem
0.5
10 14
1
0.5
0.1
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
80
40
10
10
si
nk
40
at
Without Heatsink
Natural Cooling
he
0.5
ite
60
fin
20
In
40
ith
Typ
60
10
0m
1m
80
Cu t-off Fre quen cy f T (M H Z )
125C
0.5
(V C E =4V)
0.1
1.0
20
0.02
se
5A
100
I C =10A
j- a ( C/W)
(Ca
50mA
10
25
100 mA
1 50 m A
10
(V C E =4V)
125
mA
3.35

a. Part No.
b. Lot No.
14
00
7
200
1.5
A
m mA
mA
mA
00 500 400
00
3
6
mA
14
4.4
0.65 +0.2
-0.1
5.450.1
1.5
0.8
2.15
IB
Tj
50min
VCE=4V, IC=5A
emp
hFE
eT
V(BR)CEO
Cas
14
3.45 0.2
C (
IC
p)
VEBO
5.50.2
30
150
Tem
VCEO
15.60.2
ase
C (C
150
0.80.2
ICBO
VCBO
5.5
Unit
Symbol
(Ta=25C)
Ratings
Unit
1.6
Conditions
Ratings
23.00.3
Symbol
9.50.2
16.2
LAPT
20
0.1
0
0.02
0.1
34
10
0.05
2
Without Heatsink
5
10
50
100
200
3.5
0
25
50
75
100
125
150
2SA1907
10max
V(BR)CEO
IC=50mA
80min
hFE
VCE(sat)
IC=12A, IB=0.2A
0.5max
PC
60(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
150
COB
VCB=10V, f=1MHz
150typ
pF
55 to +150
1.05 +0.2
-0.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
0.3
0.3
0.18typ
1.10typ
0.21typ
20mA
I B =10mA
1
2A
0
0.5
1.0
(V C E =4V)
300
Typ
100
50
125C
25C
30C
100
50
30
0.02
5 6
0.1
0.5
1.5
5 6
5
0.5
0.3
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
60
10
DC
0m
ms
he
at
si
nk
Without Heatsink
Natural Cooling
ite
0.5
fin
40
In
10
10
ith
20
1m
10
Collecto r Cur rent I C ( A)
Typ
20
30
300
1.5
(V C E =4V)
0.5
p)
I C =6A
0.1
4A
30
0.02
Tem
30mA
se
(Ca
50mA
(V CE =4V)
125
8 0m A
1 00 m

a. Part No.
b. Lot No.
j- a ( C/W)
m
50
3.35
1.5
0m
4.4
0.65 +0.2
-0.1
5.450.1
1.5
VCC
(V)
0.8
2.15
5.450.1
1.75
mp)
Tstg
e Te
Tj
3.30.2
a
b
3.3
IB
3.45 0.2
3.0
50min
VCE=4V, IC=2A
0.80.2
VEB=6V
5.5
IEBO
5.50.2
1.6
15.60.2
(Cas
IC
30C
VEBO
10max
80
VCB=80V
emp
VCEO
ICBO
se T
Unit
(Ca
80
Ratings
25C
VCBO
(Ta=25C)
Conditions
Symbol
23.00.3
Unit
9.50.2
(Ta=25C)
Ratings
Symbol
16.2
20
Without Heatsink
0
0.02
0.05 0.1
0.5
5 6
0.1
5
10
50
100
3.5
0
25
50
75
100
125
150
35
2SA1908
10max
IEBO
VEB=6V
10max
V(BR)CEO
hFE
120min
50min
IC=3A, IB=0.3A
0.5max
PC
75(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
150
COB
VCB=10V, f=1MHz
300typ
pF
55 to +150
1.05 +0.2
-0.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.4
0.4
0.14typ
1.40typ
0.21typ
I B =10mA
4A
0
0.2
0.4
0.6
0.8
1.0

(V C E =4V)
300
Typ
100
50
0.5
125C
25C
100
30C
50
30
0.02
5 8
200
0.1
0.5
0.5
0.5
10
100
1000 2000
Time t(ms)
1.5
0.2
0.1
1.0
(V C E =4V)
30
0.02
mp)
2A
I C =8A
e Te
(Cas
4
mp)
25mA
e Te
50mA
Cas
7 5m A
C (
mA
(V C E =4V)
125
100

a. Part No.
b. Lot No.
j - a (C/W)
m
50
A
m
50
3.35
1.5
3
m
00
4.4
0.65 +0.2
-0.1
5.450.1
1.5
VCC
(V)
0.8
2.15
5.450.1
1.75
30C
Tstg
mp)
Tj
3.30.2
a
b
16.2
IB
VCE(sat)
3.0
IC=50mA
VCE=4V, IC=3A
3.45 0.2
e Te
IC
5.50.2
(Cas
VEBO
25C
120
15.60.2
23.00.3
VCEO
0.80.2
VCB=120V
5.5
ICBO
120
1.6
Unit
VCBO
(Ta=25C)
Ratings
Unit
3.3
Symbol
Conditions
Ratings
9.50.2

Symbol
P c T a Derating
(V C E =12V)
80
10
Typ
10
50
100 150
nk
0.1
5
si
36
40
at
Without Heatsink
Natural Cooling
he
0.5
ite
0.5
60
fin
0.05 0.1
In
10
ith
20
0
0.02
DC
10
0m
Cut-o ff Fr eque ncy f T ( MH Z )
10
20
30
20
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SA1909
ICBO
VCB=140V
10max
IEBO
VEB=6V
10max
140min
IC=50mA
VCE=4V, IC=3A
50min
VCE(sat)
IC=5A, IB=0.5A
0.5max
PC
80(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
150
COB
VCB=10V, f=1MHz
400typ
pF
55 to +150
Tj
Tstg
1.75
16.2
IB
3.30.2
a
b
3.0
hFE
3.3
V(BR)CEO
1.05 +0.2
-0.1
5.450.1

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
0.5
0.5
0.17typ
1.86typ
0.27typ
100
mA
7 5m A
50mA
4
25mA
I B =10mA
0.5
1.0
1.5
2.0
(V C E =4V)
200
50
125C
100
25C
30C
50
20
0.02
10
Typ
100
0.1
0.5
10
1
0.5
0.1
10
100
1000 2000
Time t(ms)
1.5
200
P c T a Derating
(V C E =12V)
80
he
40
at
si
nk
ite
Without Heatsink
Natural Cooling
fin
0.5
In
60
ith
0m
10
ms
Typ
10
20
10
10
M aximum Po wer Dissipation P C (W)
30
30
I C =10A
(V C E =4V)
0.5
0.1
5A
30
0.02
p)
Tem
0m
(V C E =4V)
(Ca
15
10
125
m
00
j - a (C /W)
m
00

a. Part No.
b. Lot No.
3
m
00
3.35
1.5
se
10
4.4
0.65 +0.2
-0.1
5.450.1
1.5
0.8
2.15
10
Temp
IC
(Case
VEBO
3.45 0.2
30C
140
5.50.2
mp)
VCEO
15.60.2
e Te
(Cas
140
25C
VCBO
0.80.2
Unit
5.5
Ratings
Symbol
(Ta=25C)
Conditions
Unit
1.6
(Ta=25C)
Ratings
9.50.2
Symbol
23.00.3
20
Without Heatsink
0
0.02
0.1
10
0.1
3
10
50
100
200
3.5
0
25
50
75
100
125
150
37
2SA2042
ICBO
VCEO
50
IEBO
VEBO
V(BR)CEO
IC
10pulse20
hFE
IB
10max
VEB6V
10max
50min
VCE2V, IC1A
130310
VCE(sat)
IC5A, IB0.1A
0.5max
VCE12V, IE0.5A
60typ
VCB10V, f1MHz
375typ
30(Tc25C)
fT
Tj
150
COB
55 to 150
V
pF
4.20.2
2.8 c0.5
3.30.2
a
b
MHz
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.40.2
2.20.2
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
20
10
100
100
0.2typ
0.7typ
0.1typ
38
10.10.2
IC25mA
PC
Tstg
VCB50V
4.00.2
50
Unit
0.80.2
VCBO
(Ta=25C)
Ratings
Conditions
0.2
Symbol
3.9
Unit
8.40.2
(Ta=25C)
Ratings
16.90.3
Symbol
13.0min
B C E

a. Part No.
b. Lot No.
(2 k )(6 5 0) E
2SB1257
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014)
10max
60min
hFE
VCE=4V, IC=3A
2000min
IB
VCE(sat)
IC=3A, IB=6mA
1.5max
PC
25(Tc=25C)
VBE(sat)
IC=3A, IB=6mA
2max
Tj
150
fT
VCE=12V, IE=0.2A
150typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
75typ
pF
Tstg
3.3
3.0
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
10
10
0.4typ
0.8typ
0.6typ
3A
1
2A
0.5
10

8000
DC Cur r ent Gai n h F E
1000
500
100
1000
12
5C
25
500
0C
100
50
50
0.1
0.5
20
0.02
5 6
0.05 0.1
0.5
5 6
1
0.7
1m
si
nk
at
0x
he
0.1
0.07
3
1 00x 1 0
10
ite
Without Heatsink
Natural Cooling
40
150x150x2
fin
0.5
20
In
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
ith
80
1000
120
160
DC
Typ
10
200
100
25
0.5
10
P c T a Derating
10
0.1
Time t(ms)
(V C E =12V)
240
2 2.2
0
0.05
5000
Co lle ctor Cu rre nt I C ( A)
(V C E =2V)
Typ
20
0.02
(V C E =2V)
50
8000
5000
I C =1A
0.6
0.2
mp)
j - a ( C/W)
(V C E =2V)
e Te
0.8mA
(Cas
1.0mA

a. Part No.
b. Lot No.
Maxim um Power Dissipation P C (W)
1.2 mA
3.35
1 .5 m A
IB
0.65 +0.2
-0.1
1.5
125C
mA
2.
3m
1 .8
4.4
+0.2
-0.1
5.450.1
1.5
RL
()
0.8
2.15
1.05
VCC
(V)
1.75
5.450.1
3.30.2
a
b
4(Pulse6)
IC
VEB=6V
IC=10mA
3.45 0.2
V(BR)CEO
5.50.2
Temp
IEBO
15.60.2
Temp
(Case
60
VEBO
10max
30C
VCEO
VCB=60V
0.80.2
ICBO
Unit
5.5
Ratings
1.6
60
(Ta=25C)
Conditions
(Case
VCBO
Symbol
25C
Unit
9.50.2
Ratings
23.00.3
Symbol
Application : Driver for Solenoid, Relay and Motor and General Purpose
B
Equivalent circuit
16.2
Darlington
50x50x2
Without Heatsink
2
10
70
25
50
75
100
125
150
39
(3 k )(1 0 0) E
2SB1258
100min
hFE
VCE=2V, IC=3A
1000min
IB
VCE(sat)
IC=3A, IB=6mA
1.5max
PC
30(Tc=25C)
VBE(sat)
IC=3A, IB=6mA
2max
Tj
150
fT
VCE=12V, IE=0.2A
100typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
100typ
pF
Tstg
3.9
2.0
mA
1 .8 m A
IB
5
1.2 mA
0.9mA
3
8000
4A
1
10
100 200
8000
500
12
5C
C
25
500
0C
100
30
0.03
0.1
5
5000
1000
0.5
0.5
10

30
20
150x150x2
ite
he
100x100x2
at
si
10
nk
0.1
fin
20
In
Without Heatsink
Natural Cooling
20
ith
1
0.5
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
40
60
DC
50
10
5
80
1m
100
10
10
Typ
1000
P c T a Derating
(V C E =12V)
120
100
Time t(ms)
2 2.2
(V C E =4V)
Typ
1000
Cu t-off Fr eque ncy f T ( MH Z )
I C =2A
5000
0.5
6A
(V C E =4V)
0.1
80
0.03
(V C E =4V)
0.6
0.5 1
0.5typ
mp)
mA
3.
4
2.
1.6typ
B C E

4m
0.6typ
2.40.2

a. Part No.
b. Lot No.
tf
(s)
e Te
10
tstg
(s)
(Cas
ton
(s)
IB2
(mA)
IB1
(mA)
125C
10
30
VBB2
(V)
VBB1
(V)
IC
(A)
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.20.2
j- a ( C/ W)
RL
()
1.350.15
2.54

VCC
(V)
3.30.2
a
b
6(Pulse10)
IC
10max
VEB=6V
IC=10mA
Temp
V(BR)CEO
4.20.2
2.8 c0.5
IEBO
10.10.2
(Case
30C
100
VEBO
10max
4.00.2
VCEO
VCB=100V
0.80.2
ICBO
Unit
0.2
Ratings
Temp
100
(Ta=25C)
Conditions
(Case
VCBO
Symbol
25C
Unit
8.40.2
Ratings
Symbol
50x50x2
Without Heatsink
2
0
0.05
0.1
0.5
40
5 6
16.90.3
B
Equivalent circuit
13.0min
Darlington
0.05
3
10
50
100
200
25
50
75
100
125
150
(3 k )(1 0 0) E
2SB1259
hFE
mA
120min
VCE=4V, IC=5A
2000min
IB
VCE(sat)
IC=5A, IB=10mA
1.5max
PC
30(Tc=25C)
VBE(sat)
IC=5A, IB=10mA
2.0max
Tj
150
fT
VCE=12V, IE=0.2A
100typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
145typ
pF
Tstg
3.9
1.350.15
1.350.15
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
0.6typ
1.6typ
0.5typ
I B =1mA
5
I C =10A
5A
0
0.2
10
100
5000
1000
500
100
5000
12
1000
5C
C
25
500
0C
100
50
20
0.02
10
0.1
0.5
10
0.5
0.3
at
si
10
nk
10
he
ite
150x150x2
100x100x2
50x50x2
Without Heatsink
0.05
0.5
fin
0.1
In
Without Heatsink
Natural Cooling
ith
0.5
20
0.03
3
1000
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
10
DC
10
100
1m
Typ
100
30
10
10
P c T a Derating
20
0.1
Time t(ms)
(V C E =12V)
200
2 2.2
(V C E =4V)
20000
10000
Typ
0
0.05
20000
0.5
(V C E =4V)
0.1
1000
50
0.03
1A
10000
6
)
2mA
Temp
(V C E =4V)
(Case
10
10
125C
3m
A
5m
j - a (C /W)
m
10
B C E

a. Part No.
b. Lot No.

A
0m
0m
2.40.2
2.20.2
VCC
(V)
15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
3.30.2
a
b
10(Pulse15)
IC
10max
VEB=6V
IC=10mA
Temp
V(BR)CEO
4.20.2
2.8 c0.5
(Case
IEBO
10.10.2
30C
4.00.2
120
VEBO
10max
0.80.2
VCEO
VCB=120V
0.2
ICBO
Unit
mp)
Ratings
e Te
120
(Ta=25C)
Conditions
(Cas
VCBO
Symbol
25C
Unit
8.40.2
(Ta=25C)
Ratings
Symbol
16.90.3
B
Equivalent circuit
13.0min
Darlington
2
5
10
50
100
200
25
50
75
100
125
150
41
(2 k )(1 0 0) E
2SB1351
hFE
mA
60min
VCE=4V, IC=10A
2000min
IB
VCE(sat)
IC=10A, IB=20mA
1.5max
PC
30(Tc=25C)
VBE(sat)
IC=10A, IB=20mA
2.0max
Tj
150
fT
VCE=12V, IE=1A
130typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
170typ
pF
Tstg
3.9
1.350.15
1.350.15
I B =1mA
I C =10A
5A
0
0.1
10

(V C E =4V)
20000
10000
Typ
5000
10
20
12
25
30
1000
500
0.3 0.5
10
20
0.3
10
he
100x100x2
at
si
10
nk
0.1
150x150x2
ite
40
fin
Without Heatsink
Natural Cooling
In
0.5
20
ith
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
1m
DC
80
1000
P c T a Derating
120
10
10
Typ
100
30
30
160
2.4
Time t(ms)
(V C E =12V)
200
0.5
5000
240
5
Ma ximum Po we r Dissipatio n P C (W)
20000
(V C E =4V)
100
1000
800
0.3
10
1A
10000
15
10
emp
2m A
(V C E =4V)
20
eT
3 mA
C (
4 m A
15
0.6typ
125
0m
6m
1.5typ
B C E
20

a. Part No.
b. Lot No.
tf
(s)

0.7typ
20
20
tstg
(s)
Cas
10
10
ton
(s)
IB2
(mA)
IB1
(mA)
j- a ( C/W)
40
VBB2
(V)
VBB1
(V)
IC
(A)
2.40.2
2.20.2
RL
()
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

VCC
(V)
3.30.2
a
b
mp)
10max
e Te
12(Pulse20)
VEB=6V
IC=10mA
(Cas
V(BR)CEO
4.20.2
2.8 c0.5
30C
IEBO
10.10.2
4.00.2
0.80.2
60
VEBO
10max
VCEO
VCB=60V
emp
ICBO
se T
Unit
(Ca
60
Ratings
25C
VCBO
(Ta=25C)
Condition
0.2
Symbol
Unit
IC
8.40.2
Ratings
Symbol
Equivalent circuit
Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
16.90.3
13.0min
Darlington
50x50x2
Without Heatsink
2
0
0.05 0.1
0.5
42
10
20
0.05
2
10
50
100
25
50
75
100
125
150
(2 k )(1 0 0) E
2SB1352
hFE
mA
60min
VCE=4V, IC=10A
2000min
IB
VCE(sat)
IC=10A, IB=20mA
1.5max
PC
60(Tc=25C)
VBE(sat)
IC=10A, IB=20mA
2.0max
Tj
150
fT
VCE=12V, IE=1A
130typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
170typ
pF
Tstg
3.3
3.0
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
20
20
0.7typ
1.5typ
0.6typ
20
I C =10A
5A
0
0.1
10
10000
Typ
5000
10
20
12
25
30
1000
500
0.3 0.5
10
20
0.3
20
20
nk
10
si
at
he
0.1
ite
40
fin
Without Heatsink
Natural Cooling
In
0.5
40
ith
0.05
2
1000
80
100
P c T a Derating
1m
DC
10
120
0.5
10
60
10
Time t(ms)
30
Typ
2.4
0.5
160
5
(V C E =12V)
200
0
0.05 0.1
5000
(V C E =4V)
20000
240
20000
100
(V C E =4V)
10
1000
800
0.3
15
1A
10000
(V C E =4V)
emp
j- a ( C/W)
eT
1mA
Cas
10
3.35

a. Part No.
b. Lot No.
C (
2m A
0.65 +0.2
-0.1
1.5
125
=
IB
3 mA
15
4 m A
4.4

10
6m
+0.2
-0.1
5.450.1
1.5
RL
()
0.8
2.15
1.05
VCC
(V)
20
1.75
5.450.1
3.30.2
a
b
mp)
10max
12(Pulse20)
VEB=6V
IC=10mA
3.45 0.2
emp
V(BR)CEO
5.50.2
e Te
IEBO
15.60.2
(Cas
30C
60
VEBO
10max
0.80.2
VCEO
VCB=60V
5.5
ICBO
1.6
Unit
se T
60
IC
(Ta=25C)
Ratings
Conditions
(Ca
VCBO
Symbol
25C
Unit
9.50.2
(Ta=25C)
Ratings
Symbol
Equivalent circuit
Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
23.00.3
16.2
Darlington
Without Heatsink
5
10
50
100
3.5
0
50
100
150
43
(2 k ) (80) E
2SB1382
hFE
VCE=4V, IC=8A
2000min
IB
VCE(sat)
IC=8A, IB=16mA
1.5max
PC
75(Tc=25C)
VBE(sat)
IC=8A, IB=16mA
2.5max
Tj
150
fT
VCE=12V, IE=1A
50typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
350typ
pF
Tstg
3.3
3.0
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
40
10
16
16
0.8typ
1.8typ
1.0typ
1.05 +0.2
-0.1
I B =1.5m A
8A
4A
0
0.5
10
(V C E =4V)
Typ
5000
1000
10
16
10000
12
5C
5000
25
C
30
1000
500
0.3
0.5
10
16
10
p)
P c T a Derating
10
s
DC
40
si
nk
16
at
10
he
ite
Without Heatsink
Natural Cooling
fin
1
0.5
60
In
1m
0.05
0.03
3
1000
ith
100
0.5
10
Time t(ms)
0.1
80
10
44
0.2
50
Typ
0
0.05 0.1
0.5
50
2.4
(V C E =12V)
100
20000
10000
20000
(V C E =4V)
100
0.5
500
0.3
Tem
I C =16A
12
se
(V C E =4V)
(Ca
10
16
3m A
125
6 mA

a. Part No.
b. Lot No.
20
3.35
1.5
A
12m
4.4
j - a ( C/ W)
0.65 +0.2
-0.1
5.450.1

A
0m
4
m
20
0.8
2.15
1.5
VCC
(V)
26
1.75
5.450.1
3.30.2
a
b
mA
120min
emp
16(Pulse26)
IC
10max
VEB=6V
IC=10mA
3.45 0.2
mp)
V(BR)CEO
5.50.2
e Te
IEBO
15.60.2
(Cas
30C
120
VEBO
10max
0.80.2
VCEO
VCB=120V
5.5
ICBO
Unit
1.6
Ratings
se T
120
(Ta=25C)
Conditions
(Ca
VCBO
Symbol
25C
Unit
9.50.2
Ratings
Symbol
Equivalent circuit
Application : Chopper Regulator, DC Motor Driver and General Purpose
23.00.3
16.2
Darlington
20
Without Heatsink
5
10
50
100
200
3.5
0
50
100
150
(2 k ) (80) E
2SB1383
10max
IEBO
VEB=6V
10max
mA
120min
2000min
VCE(sat)
IC=12A, IB=24mA
1.8max
VBE(sat)
IC=12A, IB=24mA
2.5max
VCE=12V, IE=1A
50typ
MHz
VCB=10V, f=1MHz
230typ
pF
Tj
150
fT
55 to +150
COB
Tstg
1.05 +0.2
-0.1
5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
24
12
10
24
24
1.0typ
3.0typ
1.0typ
1.0mA
5
I B =0.6mA
12A
1
6A
0
0.5 1
10
100

(V C E =4V)
Typ
5000
1000
500
10
40
12
5000
5C
25
10000
10000
20000
30
1000
500
200
0.2
0.5
10
40
0.1
10
1000
P c T a Derating
120
Co lle ctor Cu rre nt I C (A)
nk
200
si
100
at
50
he
10
ite
fin
0.2
3
In
Without Heatsink
Natural Cooling
ith
100
W
0.5
10
10
1m
20
DC
10
30
10
40
100
50
Typ
mp
0.5
Time t(ms)
50
Te
100
0.5
2.6
60
(V C E =12V)
0
0.1
20000
(V C E =4V)
500
0.5
10
200
0.2
15
30
1.5mA
20
se
2.5m A
I C =25A
(V C E =4V)
(Ca
4 .0m A
25
5C
20
10
12
6 .0 m A
15
.0
1.4

a. Part No.
b. Lot No.
j- a ( C/W)
mA

25
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
2
3
120(Tc=25C)
3.20.1
emp
PC
p)
em
IB
eT
hFE
2.00.1
Cas
V(BR)CEO
4.80.2
C (
25(Pulse40)
19.90.3
IC=25mA
VCE=4V, IC=12A
IC
VEBO
15.60.4
9.6
2.0
VCB=120V
1.8
120
ICBO
5.00.2
VCEO
Unit
eT
Ratings
Cas
120
(Ta=25C)
Conditions
Symbol
C(
VCBO
25
Unit
4.0
Ratings
Symbol
Equivalent circuit
4.0max
20.0min
Darlington
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
45
(2 k ) (80) E
2SB1420
VCBO
120
ICBO
VCB=120V
10max
VCEO
120
IEBO
VEB=6V
10max
mA
V(BR)CEO
16(Pulse26)
hFE
Unit
IC=10mA
120min
VCE=4V, IC=8A
2000min
IB
VCE(sat)
IC=8A, IB=16mA
1.5max
PC
80(Tc=25C)
VBE(sat)
IC=8A, IB=16mA
2.5max
Tj
150
fT
VCE=12V, IE=1A
50typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
350typ
pF
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
24
12
10
24
24
1.0typ
3.0typ
1.0typ
4A
0
0.5
10

(V C E =4V)
10000
Typ
5000
1000
10
16
10000
12
5C
5000
25
0
3
1000
500
0.3
0.5
10
16
0.2
10
10
DC
40
)
emp
mp)
se T
at
si
nk
Without Heatsink
Natural Cooling
he
1
0.5
60
ite
1m
0.05
0.03
3
e Te
P c T a Derating
fin
16
1000
In
10
100
ith
1.8
10
Emitter Current I E (A )
80
10
p)
0.5
Time t(ms)
0.1
46
50
0.5
2.4
50
(V C E =12V)
Typ
0
0.05 0.1
20000
20000
100
(V C E =4V)
100
Tem
500
0.3
(Ca
8A
se
I C =16A
12
(Cas
I B =1.5m A
(V CE =4V)
(Ca
3m A
16
6 mA
10
M aximum Po we r Dissipatio n P C (W)
20
1.4
125
A
12m
5.450.1
C
0.65 +0.2
-0.1

a. Part No.
b. Lot No.
j - a (C /W )
5.00.2
1.05 +0.2
-0.1
A
0m
4
0
2
2
3
RL
()
26
3.20.1
5.450.1
VCC
(V)
2.00.1
4.80.2
30C
Tstg
15.60.4
9.6
2.0
Conditions
25C
IC
Symbol
19.90.3
VEBO
(Ta=25C)
Ratings
Unit
4.0
(Ta=25C)
Ratings
Symbol
4.0max
B
Equivalent circuit
20.0min
Darlington
20
Without Heatsink
5
10
50
100
200
3.5
0
25
50
75
100
125
150
(7 0 ) E
2SB1559
IEBO
VEB=5V
100max
V(BR)CEO
IC=30mA
150min
hFE
VCE=4V, IC=6A
5000min
VCEO
150
VEBO
IC
VCE(sat)
IC=6A, IB=6mA
2.5max
PC
80(Tc=25C)
VBE(sat)
IC=6A, IB=6mA
3.0max
Tj
150
fT
VCE=12V, IE=1A
65typ
MHz
55 to +150
VCB=10V, f=1MHz
160typ
pF
COB
4.80.2
2.00.1
3.20.1
IB
Tstg
15.60.4
9.6
1.8
100max
5.00.2
VCB=160V
160
2.0
ICBO
VCBO
19.90.3
Unit
Symbol
(Ta=25C)
Ratings
Unit
4.0
Conditions
Ratings
Symbol
4.0max
Equivalent circuit
Application : Audio, Series Regulator and General Purpose
20.0min
Darlington
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.450.1

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
10
10
0.7typ
3.6typ
0.9typ
1.4

a. Part No.
b. Lot No.
0
0.2
0.5 1
10

(V C E =4V)
40,000
50000
10,000
5,000
Typ
25C
10000
30C
5000
1000
0.2
10
ite
he
40
at
si
nk
0.1
fin
Without Heatsink
Natural Cooling
20
In
1
0.5
60
ith
10
0m
40
500 1000 2000
80
10
60
mp)
50 100
P c T a Derating
20
Typ
10
Time t(ms)
80
e Te
0.5
(V C E =12V)
100
0.2
0.5
Cas
125C
(V C E =4V)
0.5
50 100 200
2,000
0.2
p)
emp
C (
I C =4A
30
6A
Tem
I B =0.3mA
2
8A
se T
0.5m A
se
0.8m A
(Ca
1 .0 mA
(V C E =4V)
(Ca
A
1 .5 m
1. 3m A
25C
1 .8 m
125
mA
j - a ( C/W)
2.0
.5
10
mA
5.450.1
B
20
Without Heatsink
0
0.02
0.05
0.1
0.5
0.05
2
10
50
100
200
3.5
0
25
50
75
100
125
150
47
(7 0 ) E
2SB1560
Ratings
Unit
ICBO
VCB=160V
100max
VCEO
150
IEBO
VEB=5V
100max
A
V
V(BR)CEO
IC=30mA
150min
10
hFE
VCE=4V, IC=7A
5000min
IB
VCE(sat)
IC=7A, IB=7mA
2.5max
PC
100(Tc=25C)
VBE(sat)
IC=7A, IB=7mA
3.0max
Tj
150
fr
VCE=12V, IE=2A
50typ
MHz
55 to +150
VCB=10V, f=1MHz
230typ
pF
COB
4.0
IC
19.90.3
VEBO
Tstg
15.60.4
9.6
1.8
Conditions
5.00.2
Unit
160
2.0
Ratings
Symbol
(Ta=25C)
VCBO
Symbol
(Ta=25C)
Equivalent circuit
4.80.2
2.00.1
3.20.1
4.0max
20.0min
Darlington
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.450.1

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
70
10
10
0.8typ
3.0typ
1.2typ
0
0.2
0.5 1
10

(V C E =4V)
50000
40,000
Typ
10,000
5,000
125C
10000
25C
5000
30C
1000
1
10
500
0.2
0.5
10
10
0.1
10
500 1000 2000
P c T a Derating
100
10
DC
10
0m
ite
he
50
at
si
nk
Without Heatsink
Natural Cooling
fin
0.5
In
20
50 100
Time t(ms)
ith
40
0.5
Typ
Temp
80
30
2.5
100
(V C E =12V)
60
(V C E =4V)
0.5
50 100 200
1,000
0.2
Temp
7A
I C =5A
1
(Case
10A
30C
I B =0.4mA
mp)
0.6m A
(Case
0.8m A
(V C E =4V)
25C
1.0 mA
1. 2mA
10
e Te
1 .5m A
(Cas
mA
125C
2 .0
1.4

a. Part No.
b. Lot No.
j - a ( C/W)
10
mA
10
A
5m
Collector-Emitter Saturation Voltage V C E (s at ) (V )
5.450.1
B
0.1
0
0.02
0.05 0.1
0.5
48
10
0.05
3
10
50
100
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
(7 0 ) E
2SB1570
Symbol
ICBO
Ratings
Unit
100max
24.40.2
VEB=5V
100max
150min
hFE
VCE=4V, IC=7A
5000min
VCE(sat)
IC=7A, IB=7mA
2.5max
VBE(sat)
IC=7A, IB=7mA
3.0max
150
fT
VCE=12V, IE=2A
50typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
230typ
pF
IC
12
IB
PC
150(Tc=25C)
Tj
2-3.20.1
9
7
V(BR)CEO
a
b
2
3
5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
70
10
10
0.8typ
3.0typ
1.2typ
1.2m A
1.0 mA
0.8m A
0.6mA
4
I B =0.4mA
10
10A
7A
I C =5A
1
0
0.2
0.5 1
10

(V C E =4V)
Typ
10,000
5,000
1012
125C
25C
10000
30C
5000
1000
800
0.2
0.5
80
10
0.5
0.1
10 12
10
10
0m
DC
ite
he
80
at
si
nk
Without Heatsink
Natural Cooling
fin
0.5
120
40
0.1
10
2000
P c T a Derating
0.05
3
500 1000
160
20
100
In
40
0.5
50
Time t(ms)
ith
Typ
0.05 0.1
10
100
2.5

30
(V C E =12V)
0
0.02
50000
60
50 100 200
(V C E =4V)
40,000
0.5
1,000
0.2
(V C E =4V)
mp)
1.5 mA
12
e Te
2 .0m A
10
(Cas
2 .0 m A
125C

a. Part No.
b. Lot No.
j- a ( C/W)
0
1

12
3.0 +0.3
-0.1
5.450.1
B
VCC
(V)
0.65 +0.2
-0.1
1.05 +0.2
-0.1
mp)
Temp
)
IEBO
2.1
(Case
21.40.3
150
VEBO
6.00.2
36.40.3
IC=30mA
VCEO
Tstg
Conditions
VCB=160V
30C
(Ta=25C)
e Te
Unit
160
(Cas
Ratings
VCBO
25C
Symbol
Equivalent circuit
4.0max
20.0min
Darlington
10
50
100
200
5
0
Without Heatsink
0
25
50
75
100
125
150
49
(7 0 ) E
2SB1587
Unit
Conditions
Ratings
Unit
160
ICBO
VCB=160V
100max
VCEO
150
IEBO
VEB=5V
100max
VEBO
V(BR)CEO
IC=30mA
150min
IC
hFE
VCE=4V, IC=6A
5000min
IB
VCE(sat)
IC=6A, IB=6mA
2.5max
PC
75(Tc=25C)
VBE(sat)
IC=6A, IB=6mA
3.0max
Tj
150
fT
VCE=12V, IE=1A
65typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
160typ
pF
Tstg
3.0
3.3
1.75
IC
(A)
1.05 +0.2
-0.1
5.450.1
10
60
10
4.4
0.9typ
3.6typ

a. Part No.
b. Lot No.
0
0.2
0.5 1
10

(V C E =4V)
40,000
50000
10,000
5,000
Typ
25C
10000
30C
5000
1000
0.2
0.5
0.2
10
50
100
200
mp)
nk
si
40
at
0.1
he
Without Heatsink
Natural Cooling
60
ite
10
0m
0.5
0.05
2
e Te
P c T a Derating
20
500 1000
fin
40
Cas
50 100
Time t(ms)
In
60
50
10
ith
Typ
Cut- off F req uenc y f T (MH Z )
10
0.5
80
10
p)
0.5
20
80
100
(V C E =12V)
0.1
0.05
125C
0
0.02
(V C E =4V)
0.5
50 100 200
2,000
0.2
Tem
emp
C (
6A
I C =4A
se T
I B =0.3mA
8A
30
0.5m A
se
0.8m A
(Ca
1 .0 mA
(V C E =4V)
(Ca
A
1 .5 m
1. 3m A
25C
1 .8 m
125
mA
j- a ( C/W)
2.0
.5
10
mA
3.35
1.5
tf
(s)
tstg
(s)
0.7typ
ton
(s)
IB2
(mA)
0.65 +0.2
-0.1
5.450.1
1.5
IB1
(mA)
VBB2
(V)
VBB1
(V)
0.8
2.15

RL
()
3.45 0.2
3.30.2
a
b
VCC
(V)
5.50.2
5.5
15.60.2
23.00.3
Symbol
0.80.2
Ratings
VCBO
Symbol
(Ta=25C)
1.6
(Ta=25C)
9.50.2
Equivalent circuit
16.2
Darlington
20
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2000
(7 0 ) E
2SB1588
Ratings
Unit
VCBO
160
ICBO
VCB=160V
100max
VCEO
150
IEBO
VEB=5V
100max
A
V
Ratings
Unit
15.60.2
V(BR)CEO
IC=30mA
150min
IC
10
hFE
VCE=4V, IC=7A
5000min
IB
VCE(sat)
IC=7A, IB=7mA
2.5max
PC
80(Tc=25C)
VBE(sat)
IC=7A, IB=7mA
3.0max
Tj
150
fT
VCE=12V, IE=2A
50typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
230typ
pF
23.00.3
VEBO
3.0
3.3
1.75
1.05 +0.2
-0.1
5.450.1
I B =0.4mA
7A
I C =5A
1
0
0.2
0.5 1
10
(V C E =4V)
50,000
Typ
10,000
5,000
125C
10,000
25C
5,000
30C
1,000
5
10
500
0.2
0.5
10
0.5
0.1
P c T a Derating
DC
si
nk
Without Heatsink
Natural Cooling
40
at
0.5
he
60
ite
10
0m
fin
10
20
20
0.1
0.5
10
0.05
3
2000
In
40
500 1000
ith
Typ
50 100
80
10
0.05 0.1
10
Cut -off Fre quen cy f T (M H Z )
Time t(ms)
30
80
2.5
100
(V C E =12V)
0
0.02
60
40,000
50 100 200
(V C E =4V)
0.5
10A
1,000
0.2
0.6m A
(V C E =4V)
Temp
0.8m A
10
Temp
1.0 mA
1. 2mA
(Case
1 .5m A
(Case
mA
1.2typ
(Cas
2 .0
10
mA
10
m
.5
3.0typ
mp)
0.8typ

a. Part No.
b. Lot No.
tf
(s)
B
3.35
1.5
e Te
10
tstg
(s)
4.4
125C
ton
(s)
IB2
(mA)
IB1
(mA)
10
VBB2
(V)
VBB1
(V)
0.65 +0.2
-0.1
5.450.1
1.5
j - a ( C/W)
70
IC
(A)
0.8
2.15

RL
()
3.45 0.2
3.30.2
a
b
VCC
(V)
5.50.2
30C
Tstg
0.80.2
Conditions
5.5
Symbol
25C
Symbol
(Ta=25C)
1.6
(Ta=25C)
9.50.2
Equivalent circuit
16.2
Darlington
10
50
100
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
51
(7 0 ) E
2SB1647
100max
IEBO
VEB=5V
100max
A
V
VEBO
V(BR)CEO
IC
15
hFE
IC=30mA
150min
VCE=4V, IC=10A
5000min
VCE(sat)
IC=10A, IB=10mA
2.5max
IC=10A, IB=10mA
3.0max
VCE=12V, IE=2A
45typ
MHz
VCB=10V, f=1MHz
320typ
IB
PC
130(Tc=25C)
VBE(sat)
Tj
150
fT
55 to +150
Tstg
COB
15.60.4
9.6
2.0
VCB=150V
1.8
150
ICBO
pF
3.20.1
2
3
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
10
10
0.7typ
1.6typ
1.1typ
I C =5A
0.5 1
10
10,000
5,000
10 15
25C
30C
10000
5000
1000
0.2
0.5
10 15
p)
at
si
nk
Without Heatsink
Natural Cooling
he
0.5
ite
100
fin
In
Collect or Cur ren t I C ( A)
ith
DC
10
0m
50
0.1
0.5
52
10
1000 2000
P c T a Derating
0.05
3
100
Time t(ms)
10
0.05 0.1
10
130
10
Cut -off Fre quen cy f T (MH Z )
Tem
0.1
50
20
emp
0.5
40
(V C E =12V)
60
0
0.02
j- a ( C/ W)
125C
Typ
0.5
(V C E =4V)
50000
1,000
0.2
50 100 200
(V C E =4V)
50,000
30
0
0.2
se T
I C =1 0A
10
se
I C =15A
(Ca
(V C E =4V)
(Ca
15
I B =0.3mA
25C
0. 5m A
125
0.8 mA
10
1.4

a. Part No.
b. Lot No.
A
m
2
1 .0m A

1.5mA
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
15
2.00.1
1.05 +0.2
-0.1
50mA
10mA
3mA
4.80.2
5.00.2
VCEO
Unit
mp)
Ratings
e Te
150
(Ta=25C)
Conditions
Cas
VCBO
Symbol
C (
Unit
4.0
Ratings
19.90.3
Symbol
4.0max
Equivalent circuit
20.0min
Darlington
10
50
100
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
( 7 0 ) E
2SB1648
Unit
150
Symbol
ICBO
VCEO
150
IEBO
VEBO
V(BR)CEO
IC
17
hFE
IB
VCE(sat)
PC
200(Tc=25C)
VBE(sat)
Tj
150
fT
Tstg
55 to +150
Ratings
Unit
100max
36.40.3
24.40.2
VEB=5V
100max
IC=30mA
150min
VCE=4V, IC=10A
5000min
IC=10A, IB=10mA
2.5max
IC=10A, IB=10mA
3.0max
VCE=12V, IE=2A
45typ
MHz
COB
Conditions
VCB=150V
320typ
VCB=10V, f=1MHz
6.00.2
2.1
2-3.20.1
9
7
Ratings
VCBO
pF
a
b
2
3
0.65 +0.2
-0.1
1.05 +0.2
-0.1

5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
10
10
0.7typ
1.6typ
1.1typ
3.0 +0.3
-0.1
5.450.1
B
VCC
(V)

a. Part No.
b. Lot No.
0
0.2
0.5 1
10
(V C E =4V)
10,000
5,000
10
17
125C
Typ
0.5
25C
30C
10000
5000
1000
0.2
0.5
10
17
)
mp
Te
se
(Ca
0.1
120
at
si
nk
0.05
3
emp
he
10
eT
ite
Without Heatsink
Natural Cooling
fin
1
0.5
160
In
DC
10
0m
ith
1000 2000
100
P c T a Derating
80
40
0.1
0.5
Cas
10
Time t(ms)
10
0.05 0.1
30
0.5
200
10
20
p)
5C
50
40
60
(V C E =12V)
0
0.02

50000
1,000
0.2
50 100 200
(V C E =4V)
50,000
C (
I C =5A
10
12
I C =1 0A
Tem
I B =0.3mA
5
I C =15A
ase
0.5mA
C (C
0.8 mA
10
15
25
1.0 mA
(V C E =4V)
17
j - a ( C/W)
50
15
1 .5 m A
2mA
3mA
mA
17
0m
(Ta=25C)
21.40.3
Symbol
(Ta=25C)
4.0max
Equivalent circuit
20.0min
Darlington
10
50
100
200
5
0
Without Heatsink
0
25
50
75
100
125
150
53
(7 0 ) E
2SB1649
Ratings
Unit
ICBO
VCB=150V
100max
VCEO
150
IEBO
VEB=5V
100max
A
V
fT
55 to +150
COB
Tstg
IC=10A, IB=10mA
3.0max
VCE=12V, IE=2A
45typ
MHz
VCB=10V, f=1MHz
320typ
pF
3.0
150
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
10
10
0.7typ
1.6typ
1.1typ
15
I C =1 0A
I C =5A
0
0.2
0.5 1
10
10,000
5,000
10 15
125C
Typ
p)
25C
30C
10000
5000
1000
0.2
0.5
10 15
3
0.5
0.1
10
100
1000 2000
Time t(ms)
(V C E =4V)
50000
0.5
50 100 200
(V C E =4V)
1,000
0.2
50,000
10
Tem
I C =15A
(V CE =4V)
se
j - a (C /W)
30
3.35

a. Part No.
b. Lot No.
(Ca
I B =0.3mA
0. 5m A
0.65 +0.2
-0.1
1.5
125
0.8 mA
10
A
m
2
1 .0m A
4.4
1.5mA
15
+0.2
-0.1
5.450.1
1.5
VCC
(V)
0.8
2.15
5.450.1
50mA
10mA
3mA
1.75
1.05
3.30.2
a
b
mp)
VBE(sat)
Tj
2.5max
eT e
IC=10A, IB=10mA
3.3
85(Tc=25C)
5000min
Cas
PC
150min
C (
IB
VCE(sat)
IC=30mA
VCE=4V, IC=10A
hFE
emp
V(BR)CEO
3.45 0.2
seT
15
5.50.2
(Ca
IC
15.60.2
25C
VEBO
0.80.2
Conditions
5.5
Unit
150
1.6
Ratings
Symbol
(Ta=25C)
9.50.2
VCBO
Symbol
23.00.3
Equivalent circuit
16.2
Darlington
P c T a Derating
(V C E =12V)
60
100
40
ite
he
at
si
40
20
0.1
0
0.02
0.05 0.1
0.5
54
10
0.05
3
10
50
100
200
nk
Without Heatsink
Natural Cooling
60
fin
1
0.5
80
In
20
DC
ith
Collect or Cur re nt I C ( A)
10
10
0m
10
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
( 7 0 ) E
2SB1659
Conditions
Ratings
Unit
ICBO
VCB=110V
100max
VCEO
110
IEBO
VEB=5V
100max
VEBO
V(BR)CEO
IC=30mA
110min
IC
hFE
VCE=4V, IC=5A
5000min
IC=5A, IB=5mA
2.5max
IC=5A, IB=5mA
3.0max
IB
VCE(sat)
PC
50(Tc=25C)
VBE(sat)
Tj
150
fT
VCE=12V, IE=0.5A
100typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
110typ
pF
Tstg
10.20.2
4.80.2
3.00.2
Unit
110
16.00.7
Symbol
Ratings
VCBO
Symbol
(Ta=25C)
8.80.2
2.00.1
3.750.2
a
b
1.35
4.0max
Equivalent circuit
12.0min
Darlington
0.65 +0.2
-0.1

2.5

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
1.1typ
3.2typ
1.1typ
0
0.1
0.5 1
5 10
(V C E =4V)
40000
50000
5000
1000
500
5 6
25C
10000
30C
5000
1000
500
100
0.02
0.05 0.1
0.5
5 6
p)
30
eT e
mp)
Cas
at
si
nk
40
he
5 6
emp
P c T a Derating
50
ite
1000 2000
fin
0.5
100
Time t(ms)
In
0.1
10
ith
20
0.05
40
0
0.02
Tem
0.4
120
60
C (
0.5
80
(V C E =12V)
Typ
100
Typ
10000
Cu t-off Fr eque ncy f T (MH Z )
125C
0.5
(V C E =4V)
0.05 0.1
50 100
200
0.02
30
I C =3A
1
se
5A
seT
I B =0. 1mA
(Ca
0. 2m A
(V CE =4V)
(Ca
0 .3 m A
25C
.4m
125

a. Part No.
b. Lot No.
j- a ( C/W)
5m
1.4
m
.5
2.5
B C E
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
55
(7 0 ) E
2SB1685
110
VCEO
110
VEBO
IC
IB
PC
Tj
Tstg
(Ta=25C)
Ratings
Unit
ICBO
VCB=110V
100max
IEBO
VEB=5V
100max
V(BR)CEO
IC=30mA
110min
hFE
VCE=4V, IC=5A
5000min
VCE(sat)
IC=5A, IB=5mA
2.5max
60(Tc=25C)
VBE(sat)
IC=5A, IB=5mA
3.0max
150
fT
VCE=12V, IE=0.5A
100typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
110typ
pF
15.60.4
9.6
19.90.3
2.0
Conditions
Symbol
1.8
VCBO
4.80.2
5.00.2
Unit
4.0
Ratings
Symbol
2.00.1
3.20.1
4.0max
Equivalent circuit
20.0min
Darlington
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.450.1

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
1.1typ
3.2typ
1.1typ
0
0.1
0.5 1
5 10

(V C E =4V)
50000
50000
1000
500
0.5
5 6
Typ
5000
25C
10000
30C
5000
1000
500
100
0.01
0.05 0.1
0.5
Typ
p)
mp)
e Te
emp
Tem
se
se T
(Cas
0.5
5 6
10
50
100
500 1000 2000
Time t(ms)
P c T a Derating
60
20
120
(V C E =12V)
25C
he
at
si
nk
Without Heatsink
Natural Cooling
40
ite
1
0.5
0.1
20
fin
40
DC
0m
In
60
10
10
ith
5
80
10
100
Cut-o ff Fr equ ency f T (M H Z )
125C
0.05 0.1
(V C E =4V)
100
0.01
50 100
10000
30C
I C =3A
1
(Ca
5A
(Ca
I B =0. 1mA
(V C E =4V)
6
125
0. 2m A
1.4
0 .3 m A

a. Part No.
b. Lot No.
j- a ( C/W)
5m
A
m 5mA
1 0.
A
.4m
0
5.450.1
B
20
Without Heatsink
0
0.02
0.05
0.1
0.5
56
5 6
0.05
5
10
50
100
200
3.5
0
25
50
75
100
125
150
(7 0 ) E
2SB1686
ICBO
VCEO
110
IEBO
VEBO
V(BR)CEO
IC
IB
PC
Tj
Ratings
Unit
VCB=110V
100max
100max
110min
hFE
VCE=4V, IC=5A
5000min
VCE(sat)
IC=5A, IB=5mA
2.5max
30(Tc=25C)
VBE(sat)
IC=5A, IB=5mA
3.0max
150
fT
VCE=12V, IE=0.5A
100typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
110typ
pF
16.90.3
VEB=5V
IC=30mA
10.10.2
3.30.2
a
b
3.9
1.350.15
1.350.15
IC
(A)
5
10
0
0.1
0.5 1
5 10
(V C E =4V)
50000
Typ
5000
1000
500
5 6
25C
10000
30C
5000
1000
500
100
0.01
0.05 0.1
0.5
p)
(Cas
e Te
mp)
Tem
emp
5 6
5.0
1.0
0.5
0.3
10
100
1000
Time t(ms)
P c T a Derating
(V C E =12V)
120
30C
30
20
10
Typ
0.1
nk
20
si
Without Heatsink
Natural Cooling
at
0.5
he
20
ite
fin
40
In
60
0m
ith
80
10
10
100
Cut-o ff Fr equ ency f T (MH Z )
125C
0.5
(V C E =4V)
0.05 0.1
50 100
50000
100
0.01
10000
se
I C =3A
1
se T
5A
(Ca
(Ca
I B =0. 1mA
(V C E =4V)
6
25C
0 .3 m A
0. 2m A
mA
1.1typ
125
.4
0
3.2typ
B C E

a. Part No.
b. Lot No.
tf
(s)
A
m
1
5m
5m
tstg
(s)
1.1typ
ton
(s)
IB2
(mA)
IB1
(mA)
j- a ( C/W)
30
VBB2
(V)
VBB1
(V)
2.40.2
2.20.2
RL
()
VCC
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
4.20.2
2.8 c0.5
4.00.2
110
(Ta=25C)
Conditions
0.80.2
VCBO
Symbol
0.2
Unit
Tstg
(Ta=25C)
Ratings
Symbol
8.40.2
Equivalent circuit
13.0min
Darlington
10
Without Heatsink
2
0
0.02
0.05
0.1
0.5
5 6
0.05
3
10
50
100
200
25
50
75
100
125
150
57
(7 0 ) E
2SB1687
110
VCEO
110
VEBO
IC
IB
Unit
ICBO
VCB=110V
100max
IEBO
VEB=5V
100max
V(BR)CEO
IC=30mA
110min
hFE
VCE=4V, IC=5A
5000min
VCE(sat)
IC=5A, IB=5mA
2.5max
PC
60(Tc=25C)
VBE(sat)
Tj
150
fT
VCE=12V, IE=0.5A
100typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
110typ
pF
IC
(A)
3.0
1.05
10
0
0.1
0.5 1
5 10
(V C E =4V)
50000
1000
500
5 6
Typ
5000
25C
10000
30C
5000
1000
500
100
0.01
0.05 0.1
0.5
Typ
p)
mp)
e Te
emp
(Cas
0.5
1
5 6
10
100
1000 2000
Time t(ms)
P c T a Derating
60
20
120
(V C E =12V)
Tem
10
he
at
si
nk
Without Heatsink
Natural Cooling
40
ite
1
0.5
0.1
20
fin
40
In
60
DC
0m
ith
80
10
10
100
125C
50000
0.5
50 100
(V C E =4V)
0.05 0.1
10000
se
I C =3A
1
se T
5A
(Ca
30C
(V C E =4V)
6
(Ca
I B =0. 1mA
100
0.01
0 .3 m A
0. 2m A

a. Part No.
b. Lot No.
25C
mA
1.1typ
3.35
1.5
125
.4
0
4.4
3.2typ
0.65 +0.2
-0.1
A
m
1
5m
1.1typ
+0.2
-0.1
5.450.1
tf
(s)
5
0.
tstg
(s)
j- a ( C/W)
30
ton
(s)
IB2
(mA)
0.8
2.15
1.5
IB1
(mA)
VBB2
(V)
VBB1
(V)
1.75
5.450.1

RL
()
3.45 0.2
3.3
VCC
(V)
5.50.2
3.30.2
a
b
3.0max
IC=5A, IB=5mA
15.60.2
23.00.3
Ratings
Tstg
External Dimensions FM100(TO3P)
(Ta=25C)
Conditions
0.80.2
VCBO
Symbol
5.5
Unit
1.6
(Ta=25C)
Ratings
Symbol
20
Without Heatsink
0
0.02
0.05
0.1
0.5
58
5 6
9.50.2
Equivalent circuit
16.2
Darlington
0.05
5
10
50
100 150
3.5
0
25
50
75
100
125
150
2SC2023
Silicon NPN Triple Diffused Planar Transistor
mA
IEBO
VEB=6V
1.0max
mA
V(BR)CEO
IC=25mA
300min
hFE
VCE=4V, IC=0.5A
30min
IB
0.2
VCE(sat)
IC=1.0A, IB=0.2A
1.0max
PC
40(Tc=25C)
fT
VCE=12A, IE=0.2A
10typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
75typ
pF
55 to +150
IC
(A)
VB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
100
100
1.0
100
200
0.3typ
4.0typ
1.0typ
0.1
0.2

(V C E =4V)
Typ
25C
50
30
10
3
10
100
125
100
200
50
1000 2000
0.2
10
50
0.4
100
500 1000 2000
0.5
0.2
10
P c T a Derating
40
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
he
20
at
150x150x2
si
nk
Without Heatsink
Natural Cooling
0.05
ite
0.1
fin
0.5
In
30
ith
Ma ximum Po we r Dissipatio n P C ( W)
ms
1m
20
5m
Typ
1000 2000
100
Time t(ms)
10
1.0
10
20
0.8
(V C E =12V)
0.6
Collector Current I C (mA)
200
10
(V C E =4V)
0.3
100
mp)
2A
I C =1A
e Te
A /s to p
(Cas
I B =2 0m
(V CE =4V)
125C
1.4
j - a (C /W )
mA
2.5
1.35

a. Part No.
b. Lot No.
B C E
RL
()
3.750.2
2.5
VCC
(V)
2.00.1
0.65 +0.2
-0.1
200
B=
4.80.2
p)
Tstg
10.20.2
mp)
IC
1.0max
ase Te
VEBO
VCB=300V
ase Tem
300
ICBO
30C (C
VCEO
Unit
3.00.2
Ratings
25C (C
300
(Ta=25C)
Conditions
16.00.7
VCBO
Symbol
8.80.2
Unit
4.0max
(Ta=25C)
Ratings
Symbol
12.0min
Application : Series Regulator, Switch, and General Purpose
100x100x2
10
50x50x2
Without Heatsink
0
0.003
0.02
0.01
0.05 0.1
0.5
10
100
500
2
0
25
50
75
100
125
150
59
2SC2837
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186)
VCB=150V
100max
IEBO
VEB=5V
100max
IC=25mA
150min
hFE
VCE=4V, IC=3V
50min
V
VCE(sat)
IC=5A, IB=0.5A
PC
100(Tc=25C)
fT
VCE=12V, IE=1A
70typ
MHz
Tj
150
COB
VCB=80V, f=1MHz
60typ
pF
55 to +150
20.0min
IB
Tstg
IC
(A)
VB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
12
500
500
0.2typ
1.4typ
0.35typ
I B =20mA
0.5
1.0
1.5
2.0
(V C E =4V)
200
200
25C
100
30C
50
20
0.02
10
Typ
50
0.05
0.1
0.5
10
0.5
0.2
10
100
1000 2000
Time t(ms)
(V C E =12V)
P c T a Derating
100
30
m
s
100
200
nk
10
si
50
at
he
ite
0.2
0.1
60
Without Heatsink
Natural Cooling
0.5
20
0
0.02
fin
40
In
60
ith
Collector Curre nt I C ( A)
10
Typ
80
10
100
125C
120
1
(V C E =4V)
0.1
20
0.02
p)
2
5A
100
em
I C =10A
eT
40mA
as
(C
80mA
5C
12 0m A
12
A
160m
(V CE =4V)
10
200m
8
1.4
j - a ( C/W)
300m

a. Part No.
b. Lot No.

0.65 +0.2
-0.1
5.450.1
B
RL
()
m
400
2
3
5.450.1
VCC
(V)
10
3.20.1
1.05 +0.2
-0.1
a
b
2.0max
p)
V(BR)CEO
Tem
10
se
IC
(Ca
VEBO
2.00.1
150
4.80.2
30
VCEO
15.60.4
9.6
25
150
1.8
ICBO
VCBO
2.0
Unit
Symbol
(Ta=25C)
Ratings
Unit
5.00.2
Conditions
Ratings
19.90.3
Symbol
4.0
4.0max
LAPT
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SC2921
Conditions
Ratings
Unit
VCB=160V
100max
VEB=5V
100max
IC=25mA
160min
VCEO
160
IEBO
VEBO
V(BR)CEO
IC
15
hFE
VCE=4V, IC=5A
50min
IB
VCE(sat)
IC=5A, IB=0.5A
2.0max
PC
150(Tc=25C)
fT
VCE=12V, IE=2A
60typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
200typ
pF
55 to +150
Tstg
24.40.2
9
a
b
2
3
5.450.1
VCC
(V)
RL
()
IC
(A)
VB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
12
500
500
0.2typ
1.5typ
0.35typ
I B =20mA
0.2
0.4
0.6
0.8

(V C E =4V)
200
200
100
25C
30C
50
20
0.02
10 15
Typ
50
0.1
0.5
10 15
0.1
10
2000
P c T a Derating
100
200
nk
10
si
80
at
0.3
he
Without Heatsink
Natural Cooling
ite
fin
120
In
10
0.5
10
1000
ith
20
100
Time t(ms)
40
0.5
10
160
Typ
60
0.1
40
80
(V C E =12V)
0
0.02
125C
0.5
(V C E =4V)
0.1
1.0
10
0.02
p)
I C =10A
5A
100
se
(Ca
50mA
10
em
10 0m A
eT
15 0m A
as
200m
10
(C
mA
(V CE =4V)
5C
300

a. Part No.
b. Lot No.
15
mA
12
400
25
mA
500
3.0 +0.3
-0.1
5.450.1
C
j - a ( C/W)
0m
75
0m
60
0.65 +0.2
-0.1
1.05 +0.2
-0.1
15
2.1
2-3.20.1
6.00.2
36.40.3
Symbol
ICBO
p)
Tem
Unit
160
Ratings
VCBO
(Ta=25C)
30
Symbol
(Ta=25C)
21.40.3
4.0max
20.0min
LAPT
40
5
0
Without Heatsink
0
25
50
75
100
125
150
61
2SC2922
ICBO
Ratings
Unit
VCB=180V
100max
VEB=5V
100max
IC=25mA
180min
24.40.2
180
IEBO
VEBO
V(BR)CEO
IC
17
hFE
VCE=4V, IC=8V
IB
VCE(sat)
IC=8A, IB=0.8A
2.0max
PC
200(Tc=25C)
fT
VCE=12V, IE=2A
50typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
250typ
pF
55 to +150
hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)
a
b
VB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
0.2typ
1.3typ
0.45typ
I B =20mA
0
0.2
0.4
0.6
0.8

(V C E =4V)
200
Typ
50
10
125C
100
100
25C
30C
50
10
0.02
17
0.1
0.5
10 17
100
300
p)
nk
10
si
at
Without Heatsink
Natural Cooling
he
120
ite
160
fin
10
1000
In
62
100
ith
10
DC
10
0.2
1
200
0.5
0.1
p)
0.1
P c T a Derating
20
Tem
0.5
Time t(ms)
10
40
0
0.02
em
50
Typ
2.4
80
(V C E =12V)
60
200
(V C E =4V)
0.5
1.0
0.1
5A
10
0.02
eT
I C =10A
se
50mA
as
10
(C
100 mA
5C
15
12
200m
10

a. Part No.
b. Lot No.
(V CE =4V)
25
30
0mA
17
15
mA
mA
500
A
400m
j - a ( C/W)
600
3.0 +0.3
-0.1
5.450.1
C
A
1.5
mA
0.65 +0.2
-0.1
1.05 +0.2
-0.1
IC
(A)
0
70
2
3
5.450.1
RL
()
1A
21.40.3
30min
VCC
(V)
2.1
2-3.20.1
17
6.00.2
36.40.3
VCEO
Tstg
(Ta=25C)
Conditions
(Ca
Symbol
Unit
180
VCBO
30
Ratings
Symbol
4.0max
20.0min
LAPT
80
40
5
0
Without Heatsink
0
25
50
75
100
125
150
2000
2SC3179
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262)
100max
IEBO
VEB=6V
100max
V(BR)CEO
hFE
IC=25mA
60min
VCE=4V, IC=1V
40min
V
IB
VCE(sat)
IC=2A, IB=0.2A
0.6max
PC
30(Tc=25C)
fT
VCE=12V, IE=0.2A
15typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
60typ
pF
55 to +150
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
20
10
10
200
200
0.2typ
1.9typ
0.29typ
10mA
0
0.005 0.01
0.05
0.1
0.5

(V C E =4V)
200
100
50
0.5
125C
100
25C
30C
50
20
0.02
0.1
0.5
Te
Te
mp
mp
p)
10
100
1000
Time t(ms)
P c T a Derating
30
1m
s
10
m
10
he
at
si
nk
Without Heatsink
Natural Cooling
ite
0.5
fin
20
In
ith
0m
10
1.2
0.5
10
30
Typ
1.0
(V C E =12V)
20
0.8
40
Typ
500
0.1
0.6
(V C E =4V)
0
0.4
20
0.01
em
2A
I C =1 A
se
3A
(Ca
0.5
eT
20mA
as
30mA
1.0
(C
40mA
5C
12
60mA
j- a ( C/W)
(V CE =4V)
Maximu m Power Dissipa tion P C (W)
=1
1.4
2.5

a. Part No.
b. Lot No.
IB
1.35
B C E
RL
()
80m
2.5
VCC
(V)
3.750.2
0.65 +0.2
-0.1
0m
2.00.1
Tstg
4.80.2
30
IC
se
VEBO
Ca
60
C(
VCEO
10.20.2
25
3.00.2
VCB=80V
80
16.00.7
ICBO
VCBO
8.80.2
Unit
Symbol
(Ta=25C)
Ratings
Unit
4.0max
Conditions
Ratings
Symbol
12.0min
10
Without Heatsink
2
0
0.005 0.01
0.2
0.1
0.5 1
10
50
100
25
50
75
100
125
150
63
2SC3263
Unit
VCB=230V
100max
VCEO
230
IEBO
VEB=5V
100max
IC=25mA
230min
VCE=4V, IC=5A
50min
3.20.1
IB
VCE(sat)
IC=5A, IB=0.5A
2.0max
PC
130(Tc=25C)
fT
VCE=12V, IE=2A
60typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
250typ
pF
55 to +150
hFE Rank O(50 to 100), Y(70 to 140)
2
3
1.05 +0.2
-0.1
5.450.1
5.450.1
B
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
500
500
0.30typ
2.40typ
0.50typ
200m
10 0m A
50mA
I B =20mA
I C =10A
0.5
1.0
1.5
2.0

(V C E =4V)
200
200
100
25C
30C
50
10
0.02
10 15
Typ
50
0.1
0.5
10 15
3
1
0.5
0.1
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
130
40
10
80
si
nk
at
Without Heatsink
Natural Cooling
he
0.5
20
ite
fin
40
100
In
60
DC
ith
Typ
10
100
125C
0.5
1
(V C E =4V)
0.1
10
0.02
5A
100
10
p)
10
eT
em
p
Tem )
p)
mA
se
400
Ca
mA
C(
600
(V C E =4V)
15
25
as
1.0
(C
5A
5C
1.
12
0A
3.
2.
1.4
j - a ( C/W)
0A
15

a. Part No.
b. Lot No.

0.65 +0.2
-0.1
Tem
Tstg
se
hFE
(Ca
V(BR)CEO
2.00.1
15
4.80.2
30
IC
19.90.3
VEBO
15.60.4
9.6
1.8
Ratings
ICBO
5.00.2
Conditions
2.0
Unit
230
4.0
Symbol
Ratings
VCBO
Symbol
(Ta=25C)
4.0max
20.0min
LAPT
50
Without Heatsink
0
0.02
0.1
0.1
64
10
10
100
300
3.5
0
25
50
75
100
125
150
2SC3264

Symbol
ICBO
Unit
VCB=230V
100max
VEB=5V
100max
IC=25mA
230min
24.40.2
VCEO
230
IEBO
VEBO
V(BR)CEO
IC
17
hFE
VCE=4V, IC=5A
50min
IB
VCE(sat)
IC=5A, IB=0.5A
2.0max
PC
200(Tc=25C)
fT
VCE=12V, IE=2A
60typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
250typ
pF
55 to +150
hFE Rank O(50 to 100), Y(70 to 140)
21.40.3
a
b
2
3
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
0.5
0.5
0.30typ
2.40typ
0.50typ
400m
10
A
200m
10 0m A
50mA
I B =20mA
0
15
I C =10A
0.5
1.0
1.5
2.0

(V C E =4V)
200
200
Typ
50
100
100
25C
30C
50
10
5
10 17
0.02
0.1
0.5
10 17
3
1
0.5
0.1
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
40
200
10
80
10
100
300
nk
10
si
at
0.1
0.1
he
0
0.02
120
ite
Without Heatsink
Natural Cooling
fin
0.5
20
In
ith
40
160
Typ
DC
10
60
100
Cut-o ff Fr eque ncy f T ( MH Z )
125C
(V C E =4V)
0.5
0.1
5A
10
0.02
10
p)
600m
em
17
eT
1.0
15
(V C E =4V)
Cas
C (
1.5
125
0A
2.
j- a ( C/W)

a. Part No.
b. Lot No.

0
3.
3.0 +0.3
-0.1
5.450.1
B
VCC
(V)
17
0.65 +0.2
-0.1
1.05 +0.2
-0.1
2.1
2-3.20.1
20.0min
Tstg
6.00.2
36.40.3
mp)
Ratings
e Te
230
VCBO
(Ta=25C)
Conditions
(Cas
Unit
30C
Ratings
25C

Symbol
4.0max
LAPT
80
40
5
0
Without Heatsink
0
25
50
75
100
125
150
65
2SC3284
Ratings
Unit
ICBO
VCB=150V
100max
VCEO
150
IEBO
VEB=5V
100max
IC=25mA
150min
VCE=4V, IC=5A
50min
VCE(sat)
IC=5A, IB=0.5A
2.0max
125(Tc=25C)
fT
VCE=12V, IE=2A
60typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
200typ
pF
55 to +150
20.0min
PC
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
0.5
0.5
0.2typ
1.5typ
0.35typ
I B =20mA
5A
0
0.2
0.4
0.6
0.8

(V C E =4V)
200
200
Typ
50
100
25C
30C
50
20
0.02
10 14
125C
0.5
0.1
0.5
p)
10 14
3
1
0.5
0.1
10
100
1000 2000
Time t(ms)
Tem
(V C E =4V)
0.1
1.0
20
0.02
p)
I C =10A
100
se
em
50mA
10
eT
10 0m A
as
15 0m A
(C
5C
200m
12
(V C E =4V)
14
12
A
00m
1.4
j- a ( C/W)
mA

a. Part No.
b. Lot No.

400
75
0m
14
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
A
0m
60 mA
0
0
5
2
3
1.05 +0.2
-0.1
3.20.1
IB
Tstg
(Ca
hFE
2.00.1
V(BR)CEO
4.80.2
30
14
IC
19.90.3
VEBO
15.60.4
9.6
1.8
Conditions
5.00.2
Unit
150
2.0
Ratings
VCBO
Symbol
(Ta=25C)
25
Symbol
(Ta=25C)
4.0
4.0max
LAPT
P c T a Derating
(V C E =12V)
40
130
1m
10
Typ
66
0.2
3
10
100
200
nk
10
si
Without Heatsink
Natural Cooling
at
100
he
ite
0.1
0.5
0
0.02
fin
20
0m
In
40
10
ith
60
10
80
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SC3519/3519A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)
VCB=
VEBO
IEBO
IC
15
V(BR)CEO
IB
hFE
PC
130(Tc=25C)
VCE(sat)
Tj
150
fT
55 to +150
COB
VCB=10V, f=1MHz
180
160
50min
IC=5A, IB=0.5A
2.0max
VCE=12V, IE=2A
50typ
MHz
250typ
pF

IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.2typ
1.3typ
0.45typ
I B =20mA
0.2
0.4
0.6
0.8

(V C E =4V)
Typ
50
125C
100
25C
30C
50
10
0.02
10 15
0.1
0.5
10 15
0.1
)
mp
Te
nk
2
200
si
100
at
10
50
he
10
ite
1.2SC3519
2.2SC3519A
fin
Without Heatsink
Natural Cooling
100
In
1
0.5
1
1
1000 2000
ith
ms
DC
0.05
5
100
P c T a Derating
0.1
10
20
0.1
Time t(ms)
10
0
0.02
p)
0.5
130
10
40
se
40
Typ
(Ca
80
(V C E =12V)
60
100
300
300
(V C E =4V)
0.5
1.0
0.1
5A
10
0.02
em
I C =10A
50mA
eT
10
as
10 0m A
(C
200m
10
25
mA
(V C E =4V)
300
1.4
15
12
m
400
5.450.1
C
j- a ( C/W)
mA
0.65 +0.2
-0.1

a. Part No.
b. Lot No.

A
0m
70
500
2
3
RL
()
3.20.1
5.450.1
VCC
(V)
m
00
1.05 +0.2
-0.1
15
2.00.1
VCE=4V, IC=5A
1.8
2.0
180min
160min
4.80.2
100max
VEB=5V
IC=25mA
15.60.4
9.6
30
Tstg
180
ICBO
Unit
4.0
Conditions
19.90.3
160
Symbol
4.0max
VCEO
Unit
(Ta=25C)
Ratings
2SC3519 2SC3519A
100max
5.00.2

Ratings
Symbol
2SC3519 2SC3519A
VCBO
160
180
20.0min
LAPT
50
Without Heatsink
3.5
0
25
50
75
100
125
150
67
2SC3678
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)
IEBO
VEB=7V
100max
A
V
V(BR)CEO
IC=10mA
800min
IC
3(Pulse6)
hFE
VCE=4V, IC=1A
10 to 30
IB
1.5
VCE(sat)
IC=1A, IB=0.2A
0.5max
PC
80(Tc=25C)
VBE(sat)
IC=1A, IB=0.2A
1.2max
Tj
150
fT
VCE=12V, IE=0.3A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
50typ
pF
I B =50mA
V B E (sat)
p)
55C (Case Tem
e Temp)
25C (Cas
125C
(Case
Temp)
55
V C E (sat)
0
0.02
0.05
0.1
5C
t on t stg t f I C Characteristics (Typical)

8
t on t st g t f ( s)
50
55C
10
5
t s tg
V C C 250V
I C :I B 1 :I B2
=2:0.3:1Const.
1
tf
0.5
t on
0.2
0.1
0.5
0.5
0.3
10
P c T a Derating

1000
Collecto r Curr ent I C (A)
nk
500
si
100
40
at
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
60
he
1000
500 1000
ite
500
0.1
50
100
80
0.5
50
Time t(ms)
fin
100
In
Without Heatsink
Natural Cooling
1.2
ith
0.5
1. 0
68
0.8
10
10
0.6
Reverse Bias Safe Operating Area
10
0.4
0.1
50
25C
Switching T im e
125C
0.5
0.2
(V C E =4V)
0.1
0.05
12
0.5
2
mp)
5
0.01
(V CE =4V)
e Te
100mA

Base-Emitter Saturation Voltage V B E (s at) (V)
1max
(I C /I B =5)
200 mA
5max
400mA
300mA
1max
j - a (C /W )
500mA
0.5
V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)
3
0.15

a. Part No.
b. Lot No.
p)
10
1.4
ase Tem
tf
(s)
55C (C
250
IB1
(A)
tstg
(s)
0.65 +0.2
-0.1
5.450.1
B
ton
(s)
(Cas
VBB2
(V)
5.450.1
IB2
(A)
125C
VBB1
(V)
2
3
1.05 +0.2
-0.1
2 5 Cas
eT
C
e m p)
250
RL
()
IC
(A)
3.20.1

VCC
(V)
2.00.1
mp)
Tstg
4.80.2
ase Te
VEBO
25C (C
800
20.0min
VCEO
15.60.4
9.6
1.8
100max
5.00.2
VCB=800V
900
2.0
ICBO
VCBO
4.0
Unit
Symbol
19.90.3
Ratings
Unit
(Ta=25C)
Conditions
Ratings
4.0max

Symbol
Application : Switching Regulator and General Purpose
20
3.5
0
Without Heatsink
0
25
50
75
100
12 5
150
2SC3679
IEBO
VEB=7V
100max
V(BR)CEO
IC=10mA
800min
5(Pulse10)
hFE
VCE=4V, IC=2A
10 to 30
2.5
VCE(sat)
IC=2A, IB=0.4A
0.5max
PC
100(Tc=25C)
VBE(sat)
IC=2A, IB=0.4A
1.2max
Tj
150
fT
VCE=12V, IE=0.5A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
75typ
pF
1.05 +0.2
-0.1
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
125
10
0.3
1max
5max
1max
C
125C (
V C E (sat)
0
0.03 0.05
0.1
0.5
as
10

10
25C
55C
10
0.5
t s tg
V C C 250V
I C :I B1 :I B 2
=2:0.3:1Const.
tf
0.5
t on
0.2
0.1
0.5
0.1
100
1000
P c T a Derating
500
1000
nk
100
si
0.01
50
50
at
1000
he
500
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than1%
ite
C)
0.1
fin
In
100
10
100
0.5
0.05
0.05
50
ith
=2
Without Heatsink
Natural Cooling
10
p)
0.5
Time t(ms)
( Tc
1.2
1m
DC
1.0
0m
0.8
10
s
10
0.5
0.01
5
10
10
0.6
20
20
10
0.4
10
0.2
0.1
t on t s t g t f ( s)
125C
Swi tchi ng T im e
50
0.1
(V C E =4V)
0.05
mp)
5
0.02
ase Tem
55C (Case Temp)

25C (Case Temp)
e Temp)
125C (Cas
e Te
V B E (sat)
55C (C
I B =100mA
(Cas
125C
200mA
j - a ( C/W)
300mA
(V CE =4V)
Te
m p)
25
C
5 5 C
400 mA
1.4
(I C /I B =5)
500mA

a. Part No.
b. Lot No.

0.65 +0.2
-0.1
5.450.1
B
RL
()
600mA
2
3
5.450.1
VCC
(V)
700mA
3.20.1
2.00.1
IB
Tstg
4.80.2
VEBO
1.8
15.60.4
9.6
5.00.2
A
19.90.3
100max
Temp
800
VCB=800V
(Case
VCEO
ICBO
25C
Unit
2.0
900
Ratings
4.0
VCBO
(Ta=25C)
Conditions
Symbol
4.0max
Unit
IC
(Ta=25C)
Ratings
Symbol
20.0min
3.5
0
Without Heatsink
0
25
50
75
100
125
150
69
2SC3680
Ratings
Unit
ICBO
VCB=800V
100max
VCEO
800
IEBO
VEB=7V
100max
V(BR)CEO
IC=10mA
800min
7(Pulse14)
hFE
VCE=4V, IC=3A
10 to 30
3.5
VCE(sat)
IC=3A, IB=0.6A
0.5max
PC
120(Tc=25C)
VBE(sat)
IC=3A, IB=0.6A
1.2max
Tj
150
fT
VCE=12V, IE=2A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
105typ
pF
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
83
10
0.45
1.5
1max
5max
1max
12
0.05
0.1
0.5
10
10
0.05
0.1
0.5
t s tg
5
V C C 250V
I C :I B1 :I B2 =2:0.3:1Const.
tf
0.5
t on
0.2
0.1
0.5
0.1
mp)
)
p)
ase Tem
1000
P c T a Derating
120
100
500
1000
nk
0.01
50
si
1000
at
500
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
he
0.1
100
ite
100
fin
100
Temp
10
In
50
Time t(ms)
0.5
0.05
10
(Case
0.5
ith
Without Heatsink
Natural Cooling
0.05
70
1.2
10
0.5
0.01
2
1.0
10
0.8
1m
0.6
20
20
10
0.4
10
0.2
0.1
Swi tchi ng T im e
55C
5
0.02
50
25C
e Te
5 7
(V C E =4V)
(Cas
5C
25C
55C (C
V C E (sat)
12
125C
(C
emp
125C
0
0.02
emp
ase T
j - a ( C/W)
p)
ase Tem
eT
I B =100mA
55C (C
as
200mA
V B E (sat)
25C (C
(V CE =4V)
ase Temp)
(C
300 mA
(I C /I B =5)
1.4
500mA
5.450.1
C
25

0.65 +0.2
-0.1

a. Part No.
b. Lot No.
700m A
2
3
RL
()
1A
3.20.1
5.450.1
VCC
(V)
2.00.1
1.05 +0.2
-0.1
4.80.2
IB
Tstg
4.0
IC
19.90.3
VEBO
15.60.4
9.6
1.8
Conditions
5.00.2
Unit
900
2.0
Ratings
VCBO
Symbol
(Ta=25C)
4.0max
Symbol
20.0min
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SC3830
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)
(Ta=25C)
1max
mA
IEBO
VEB=10V
100max
10
V(BR)CEO
6(Pulse12)
hFE
IC=25mA
500min
VCE=4V, IC=2A
10 to 30
IB
VCE(sat)
IC=2A, IB=0.4A
0.5max
PC
50(Tc=25C)
VBE(sat)
IC=2A, IB=0.4A
1.3max
Tj
150
fT
VCE=12V, IE=0.5A
8typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
45typ
pF
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
100
10
0.2
0.4
1max
4.5max
0.5max
12
0
0.02
0.05
0.1
0.5
55C
10
5 6
1
0.5
t on
tf
0.1
0.2
0.5
mp)
e Te
0.5
0.3
10
100
1000
P c T a Derating
50
nk
si
500 600
at
100
he
0.02
50
30
ite
500 600
fin
0.1
Without Heatsink
Natural Cooling
L=3mH
IB2=0.5A
Duty:less than 1%
In
0.5
40
ith
ms
0.05
1.4
1m
10
D
Without Heatsink
Natural Cooling
0.05
100
1.2
Time t(ms)
0.5
50
1.0
10
10
0.8
0.6
20
10
5
0.4
20
10
0.2
0.02
7
t s tg
V C C 200V
I C :I B1 :I B 2 =10:1:2
0.1
7
5
25C
Swi tchi ng T im e
125C
0.5
50
0.1
(V C E =4V)
0.05
mp
5
0.02
V C E (sat)
j - a ( C/W)
p)
ase Tem
125C (C
(Cas
I B =100mA
p)
55C (Case Tem
Temp)
25C (Case
Te
se
200mA
V B E (sat)
(Ca
300mA
(V C E =4V)
125
400 mA
60 0m A
1.4
(I C /I B =5)
(C
as
2 5 e Te
m p)
C

2.5

a. Part No.
b. Lot No.
80 0m A
1.35
B C E
RL
()
1A
2.5
VCC
(V)
3.750.2
0.65 +0.2
-0.1
2.00.1
55C
Tstg
4.80.2
emp
VEBO
se T
500
(Ca
VCEO
10.20.2
25C
3.00.2
VCB=600V
600
16.00.7
ICBO
VCBO
8.80.2
Unit
Symbol
4.0max
Ratings
Unit
IC
Conditions
Ratings
12.0min
Symbol
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
71
2SC3831
1max
mA
VCEO
500
IEBO
VEB=10V
100max
10
V(BR)CEO
IC=25mA
500min
10(Pulse20)
hFE
VCE=4V, IC=5A
10 to 30
IB
VCE(sat)
IC=5A, IB=1A
0.5max
PC
100(Tc=25C)
VBE(sat)
IC=5A, IB=1A
1 . 3 max
Tj
150
fT
VCE=12V, IE=1A
8typ
55 to +150
COB
VCB=10V, f=1MHz
105typ
V
V
MHz
1.05 +0.2
-0.1
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
40
10
0.5
1.0
1max
4.5max
0.5max
0.05 0.1
0.5
10
10
t s tg
V C C 200V
I C :I B 1 :I B 2 =10:1:2
1
0.5
t on
tf
0.1
0.2
0.5
10
0.1
10
100
Maxim um Power Dissipatio n P C ( W)

500 600
nk
Without Heatsink
Natural Cooling
L=3mH
I B 2 =0.5A
Duty:less than 1%
50
si
0.01
50
mp)
P c T a Derating
at
500 600
1000
he
100
100
ite
50
fin
0.05
Temp
0.5
In
0.02
8 10
1
0.5
0.05
(Case
ith
Without Heatsink
Natural Cooling
1.2
ms
0.5
1.0
100
0.8
Time t(ms)
10
10
10
0.6
30
30
72
0.4
0.2
0.1
5 5C
Switching T im e
25C
10
10
125C
1m
p)
10
50
0.5
Tem
2
C
(V C E =4V)
0.1
se
C
0.05
55C
C
5
V C E (sat)
5
0.02
(Ca
)
mp
12
0
0.02
(Case
)
Temp
j- a ( C/W)
125C
125
100mA
2
p)
ase Tem
25C (C
Te
200mA
e Temp)
55C (Cas
se
400 mA
V B E (sat)
1
(C
a
60 0m A
(V CE =4V)
10
1.4
25

A
.2
IB
=1
800 mA

a. Part No.
b. Lot No.
(I C /I B =5)
1A
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
2
3
pF
10
3.20.1
e Te
Tstg
2.00.1
(Cas
IC
4.80.2
25C
VEBO
15.60.4
9.6
1.8
Unit
VCB=600V
Symbol
5.00.2
Ratings
ICBO
2.0
Conditions
4.0
Unit
600
19.90.3
Ratings
VCBO
20.0min
Symbol
(Ta=25C)
4.0max
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SC3832
(Ta=25C)
Unit
ICBO
VCB=500V
100max
IEBO
VEB=10V
100max
10
V(BR)CEO
IC=25mA
400min
7(Pulse14)
hFE
VCE=4V, IC=3A
10 to 30
IB
VCE(sat)
IC=3A, IB=0.6A
0.5max
PC
50(Tc=25C)
VBE(sat)
IC=3A, IB=0.6A
1.3max
Tj
150
fT
VCE=12V, IE=0.5A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
50typ
pF
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
66.7
10
0.3
0.6
1max
3max
0.5max
0.05
t o n t s t g t f ( s)
25C
30 C
Sw it ching Time
0.5
10
1
0.5
t on
tf
0.1
0.2
0.5
0.3
mp)
100
1000
P c T a Derating
500
nk
100
si
50
at
10
30
he
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
40
ite
10
fin
500
e Te
0.5
In
100
0.1
5
(Cas
ith
0.1
1.2
Without Heatsink
Natural Cooling
0.5
1.0
50
0.8
Time t(ms)
10
0.6
50
0.4
20
10
10
0.2
20
V C C 200V
I C :I B1 :I B 2 =10:1:2
0.5
p)
5 7
t s tg
10
Tem
125 C
0.1
10
50
0.5
(V C E =4V)
0.1
0.05
C
5
55C
12
5
0.02
Temp
V C E (sat)
0
0.02
(Case
se
125C
(Ca
e Temp)
25C (Cas
j - a ( C/W)
e Temp)
55C (Cas
125
I B =100mA
200mA
6
V B E (sat)
(V C E =4V)
as
e
2 5 Tem
p)
C
300mA
(I C /I B =5)
(C
80
400mA
1.4

a. Part No.
b. Lot No.

0m
2.5
B C E
RL
()
60 0m A
3.00.2
2.5
VCC
(V)
1.35
0.65 +0.2
-0.1
emp
Tstg
3.750.2
se T
VEBO
2.00.1
(Ca
400
4.80.2
25C
VCEO
10.20.2
16.00.7
8.80.2
500
4.0max
VCBO
12.0min
Symbol
Ratings
Unit
IC
Conditions
Ratings
Symbol
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
73
2SC3833
Unit
100max
VCEO
400
IEBO
VEB=10V
100max
10
V(BR)CEO
IC=25mA
400min
12(Pulse24)
hFE
VCE=4V, IC=7A
10 to 30
VCE(sat)
IC=7A, IB=1.4A
0.5max
PC
100(Tc=25C)
VBE(sat)
IC=7A, IB=1.4A
1.3max
Tj
150
fT
VCE=12V, IE=1A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
105typ
pF
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
28.5
10
0.7
1.4
1.0max
3.0max
0.5max
12
0.05 0.1
0.5
10
t on t st g t f I C Characteristics (Typical)
8
50
30C
10
10 12
t s tg
V C C 200V
I C :I B1 :I B2 =10:1:2
1
0.5
t on
tf
0.1
0.5
10
)
Temp
1000
P c T a Derating
100
0.01
5
10
50
100
500
nk
500
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
si
0.1
50
at
he
100
ite
100
mp)
p)
10
fin
In
0.01
74
0.1
Time t(ms)
0.5
0.05
50
0.5
ith
0.05
10
1.2
25
Without Heatsink
Natural Cooling
10
0.5
0.1
10
ms
c=
(T
1.0
1ms
10
DC
0.8
30
0
0.6
10
0.4
30
0.2
0.5
25C
Swit ching Time
125C
0.1
(V C E =4V)
0.05
Tem
5
0.02
V C E (sat)
0
0.02
(C
(Case
125C
6
se
emp
ase T
e Te
e Temp)
25C (Cas
j - a ( C/W)
Temp)
55C
I B =100mA
55C (Case
(Ca
200mA
10
V B E (sat)
125
400m A
(V CE =4V)
12
(I C /I B =5)
as
e
2 5 Temp
)
C
60 0m A
1.4
(C

80 0m A
10

a. Part No.
b. Lot No.
A
1000m
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
12
2
3
1.05 +0.2
-0.1
3.20.1
IB
Tstg
2.00.1
(Cas
IC
4.80.2
25C
VEBO
15.60.4
9.6
1.8
VCB=500V
2.0
ICBO
4.0
19.90.3
Unit
500
5.00.2
Ratings
Conditions
Ratings
VCBO
4.0max
Symbol
(Ta=25C)
20.0min
Symbol
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SC3834
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)
Conditions
Ratings
Unit
ICBO
VCB=200V
100max
VCEO
120
IEBO
VEB=8V
100max
V(BR)CEO
IC=50mA
120min
7(Pulse14)
hFE
VCE=4V, IC=3A
70 to 220
IB
VCE(sat)
IC=3A, IB=0.3A
0.5max
PC
50(Tc=25C)
VBE(sat)
IC=3A, IB=0.3A
1.2max
Tj
150
fT
VCE=12V, IE=0.5A
30typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
110typ
pF
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
50
16.7
10
0.3
0.6
0.5max
3.0max
0.5max
0
0.005 0.01
0.05
0.1
0.5

(V C E =4V)
100
50
1 2 5 C
25
100
Typ
30
50
20
0.01
0.05
0.1
0.5
5 7
20
10
10
0m
)
Temp
(Case
nk
200
si
120
at
50
he
10
30
ite
0.05
fin
Without Heatsink
Natural Cooling
In
0.5
40
ith
1000
0.1
100
10
0.3
P c T a Derating
ms
20
0.5
50
10
0.5
Time t(ms)
10
0.05 0.1
4
(V C E =12V)
30
1.0 1.1
0.5
300
0
0.01
(V C E =4V)
0.5
mp)
200
0.1
p)
20
0.02
30C
I B =10mA
4
Tem
20 mA
5A
3A
40m
se
(Ca
60mA
6
2
125
mA
(V CE =4V)
I C= 1
100
2.6
j- a ( C/W)
A
50m
1.4

a. Part No.
b. Lot No.

2.5
B C E
RL
()
m
200
1.35
2.5
VCC
(V)
0.65 +0.2
-0.1
3.750.2
e Te
Tstg
2.00.1
(Cas
IC
4.80.2
25C
VEBO
10.20.2
3.00.2
Unit
200
16.00.7
Ratings
VCBO
Symbol
(Ta=25C)
8.80.2
Symbol
4.0max
12.0min
Application : Humidifier, DC-DC Converter, and General Purpose
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
75
2SC3835
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)
IEBO
VEB=8V
100max
V(BR)CEO
IC=50mA
120min
7(Pulse14)
hFE
VCE=4V, IC=3A
70 to 220
VCE(sat)
IC=3A, IB=0.3A
0.5max
PC
70(Tc=25C)
VBE(sat)
IC=3A, IB=0.3A
1.2max
Tj
150
fT
VCE=12V, IE=0.5A
30typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
110typ
pF
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
50
16.7
10
0.3
0.6
0.5max
3.0max
0.5max
I B =10mA
1
0
0.005 0.01
0.05
0.1
0.5

(V C E =4V)
100
50
1 2 5 C
25
100
Typ
30
50
20
0.01
0.05
0.1
0.5
5 7
20
0.5
0.4
10
he
at
si
nk
ite
fin
76
40
30
20
10
Without Heatsink
0.05
1
In
Without Heatsink
Natural Cooling
50
ith
0.5
60
W
0.1
0.5
1000 2000
100
P c T a Derating
ms
10
10
70
10
20
0.05 0.1
Time t(ms)
10
5
5
(V C E =12V)
30
1.0 1.1
0.5
Cut-o ff Fr equ ency f T (MH Z )
300
0
0.01
(V C E =4V)
0.5
200
mp)
0.1
p)
20
0.02
Temp
4
Tem
20 mA
5A
3A
40m
se
(Ca
60mA
6
2
125
mA
(V C E =4V)
I C= 1
100
2.6
1.4
j - a ( C/W)
A
50m

a. Part No.
b. Lot No.

A
00m
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
2
3
1.05 +0.2
-0.1
3.20.1
IB
Tstg
2.00.1
(Case
IC
4.80.2
30C
VEBO
15.60.4
9.6
1.8
100max
5.00.2
VCB=200V
e Te
120
ICBO
(Cas
VCEO
Unit
25C
Ratings
2.0
200
(Ta=25C)
Conditions
Symbol
4.0
VCBO
19.90.3
Unit
4.0max
Ratings
Symbol
20.0min
10
50
120
200
3.5
0
25
50
75
100
125
150
2SC3851/3851A
V(BR)CEO
IB
hFE
VCE=4V, IC=1A
60min
80min
40 to320
PC
25(Tc=25C)
VCE(sat)
IC=2A, IB=0.2A
0.5max
Tj
150
fT
VCE=12V, IE=0.2A
15typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
60typ
pF
Tstg
3.30.2
a
b
3.9
IC=25mA
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
12
10
200
200
0.2typ
1typ
0.3typ
10mA
1
5mA
0.5
3A
0
0.005 0.01
0.05
0.1
0.5
(V C E =4V)
100
50
Typ
125C
25 C
100
3 0 C
50
20
0.01
0.05
0.1
0.5
p)
10
100
0m
ite
he
at
si
nk
fin
Without Heatsink
Natural Cooling
In
0.5
20
ith
DC
0.5 1
1000
10
10
10
Without Heatsink
0.05
0
0.1
P c T a Derating
0.1
30
0.005
0.5
10
30
10
1.2
Time t(ms)
1m
Typ
1.0
(V C E =12V)
20
0.5
500
40
500
(V C E =4V)
0.5
Tem
I C =1 A
0.1
2A
20
0.01
se
20mA
1.0
(Ca
30mA
40mA
125
IB
=7
50mA
(V CE =4V)
j - a (C/W)
0m
60 m A

a. Part No.
b. Lot No.
B C E
2.40.2
2.20.2
mp)
e Te
IC
100max
VEB=6V
(Cas
IEBO
30C
emp
VEBO
100
0.80.2
80
VCB=
4.00.2
100max
ICBO
se T
4.20.2
2.8 c0.5
(Ca
80
10.10.2
25C
100
60
Unit
8.40.2
80
VCEO
Conditions
16.90.3
VCBO
Symbol
13.0min
Unit
(Ta=25C)
Ratings
2SC3851 2SC3851A
0.2

Ratings
Symbol
2SC3851 2SC3851A
Application : Audio and PPC High Voltage Power Supply, and General Purpose
10
50
80
50
100
150
77
2SC3852/3852A
High hFE
LOW VCE (sat)
Silicon NPN Epitaxial Planar Transistor
IC
V(BR)CEO
VEB=6V
100max
IC=25mA
60min
80min
hFE
VCE=4V, IC=0.5A
500min
PC
25(Tc=25C)
VCE(sat)
IC=2A, IB=50mA
0.5max
Tj
150
fT
VCE=12V, IE=0.2A
15typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
50typ
pF
Tstg
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
20
20
1.0
10
15
30
0.8typ
3.0typ
1.2typ
1mA
0.5mA
0.5
0
0.001
0.005 0.01
0.05
0.1
0.5
125C
1000
Typ
500
25 C
500
3 0 C
100
0.01
0.1
p)
100
si
nk
at
10
Without Heatsink
0.05
0.5
he
0.1
ite
Without Heatsink
Natural Cooling
fin
0.5
20
In
DC
ith
10
0m
10
1000
P c T a Derating
Typ
78
10
1m
20
0.05 0.1
30
10
V CB =10V
I E =2A
Time t(ms)
10
5
0
0.005 0.01
(V C E =12V)
30
0.5
1.0 1.1
0.5
0.5
(V C E =4V)
2000
0.5
2000
(V C E =4V)
0.1
em
2A
I C =1A
100
0.01
3A
1000
eT
2mA
1.0
Cas
3mA
C (
5mA
125
8mA
(V CE =4V)
3
1.0
j - a ( C/W)
=1
IB
2m

a. Part No.
b. Lot No.
B C E
2.40.2
2.20.2
VCC
(V)
4.00.2
3.9
IB
3.30.2
a
b
IEBO
Temp
(Case
100
30C
VEBO
80
0.80.2
VCB=
0.2
ICBO
mp)
e Te
80
4.20.2
2.8 c0.5
(Cas
100
60
10.10.2
25C
80
VCEO
Unit
16.90.3
VCBO
Conditions
13.0min
Symbol
Unit
(Ta=25C)
Ratings
2SC3852 2SC3852A
10max
8.40.2

Ratings
Symbol
2SC3852 2SC3852A
Application : Driver for Solenoid and Motor, Series Regulator and General Purpose
10
50
100
50
100
150
2SC3856
Conditions
Ratings
Unit
ICBO
VCB=200V
100max
VCEO
180
IEBO
VEB=6V
100max
IC=50mA
180min
VCE=4V, IC=3A
50min
VCE(sat)
IC=5A, IB=0.5A
2.0max
130(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
300typ
pF
55 to +150
20.0min
PC
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.5typ
1.8typ
0.6typ
I B =20mA
I C =10A
0.5
1.0
1.5

(V C E =4V)
300
200
100
25C
50
30C
20
0.02
10 15
0.1
0.5
10 15
1
0.5
0.1
10
(V C E =12V)
10
10
Typ
at
si
nk
Without Heatsink
Natural Cooling
he
0.5
ite
100
fin
In
10
ith
20
0m
130
s
10
3m
1000 2000
P c T a Derating
40
30
100
Time t(ms)
Maxim um Power Dissi pation P C (W)
0.5
Typ
50
125C
0.1
(V C E =4V)
20
0.02
2.0
mp)
5A
100
Temp)
e Te
50mA
10
mp)
100 mA
e Te
20 0m A
10
Cas
C (
300m
(V C E =4V)
15
125
mA
0
50
1.4
j- a ( C/W)

a. Part No.
b. Lot No.

1A
m
00
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
15
2
3
1.05 +0.2
-0.1
3.20.1
IB
Tstg
(Cas
hFE
2.00.1
(Case
V(BR)CEO
4.80.2
30C
15
25C
IC
19.90.3
VEBO
15.60.4
9.6
1.8
Unit
200
2.0
Ratings
VCBO
5.00.2
Symbol
(Ta=25C)
4.0
Symbol
4.0max
50
Without Heatsink
0
0.02
0.1
1
10
0.1
10
100
200
3.5
0
25
50
75
100
125
150
79
2SC3857
Ratings
Unit
ICBO
VCB=200V
100max
IEBO
VEB=6V
100max
IC=50mA
200min
200
24.40.2
V(BR)CEO
IC
15
hFE
VCE=4V, IC=5A
50min
IB
VCE(sat)
IC=10A, IB=1A
3.0max
VCE=12V, IE=0.5A
20typ
MHz
VCB=10V, f=1MHz
250typ
pF
150(Tc=25C)
Tj
150
COB
55 to +150
Tstg
21.40.3
20.0min
PC
a
b
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
0.5
0.5
0.3typ
2.4typ
0.4typ
I B =50mA

(V C E =4V)
50
100
125C
25C
100
30C
50
20
0.02
10 15
0.1
0.5
10 15
0.5
0.1
10
100
300
nk
10
si
80
at
0.1
10
he
Without Heatsink
Natural Cooling
ite
0.5
fin
120
In
ith
10ms
10
20
10
3m
0m
Typ
1000
P c T a Derating
10
30
100
Time t(ms)
160
20
80
50
40
(V C E =12V)
Typ
0.1
300
0
0.02
300
p)
5A
0
(V C E =4V)
0.5
Tem
I C =15A
0.1
10A
20
0.02
10
se
10 0m A
(Ca
20 0m A
10
(V CE =4V)
15
125
400m
mA
3.0 +0.3
-0.1
j- a ( C/W)
0
60

a. Part No.
b. Lot No.

5A
1.
1A
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
15
2
3
1.05 +0.2
-0.1
9
7
VEBO
fT
2.1
2-3.20.1
VCEO
6.00.2
36.40.3
Temp
(Case
200
30C
Unit
VCBO
Symbol
(Ta=25C)
Conditions
Ratings
25C
Symbol
4.0max
40
5
0
Without Heatsink
0
25
50
75
100
125
150
2000
2SC3858
Symbol
Conditions
Ratings
Unit
VCB=200V
100max
VEB=6V
100max
IC=50mA
200min
Ratings
Unit
VCBO
200
ICBO
VCEO
200
IEBO
VEBO
V(BR)CEO
IC
17
hFE
VCE=4V, IC=8A
50min
IB
VCE(sat)
IC=10A, IB=1A
2.5max
PC
200(Tc=25C)
fT
VCE=12V, IE=1A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
300typ
pF
55 to +150
hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)
24.40.2
7
21.40.3
20.0min
a
b
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.5typ
1.8typ
0.6typ
I B =20mA
(V C E =4V)
200
100
25C
30C
50
10
0.02
10 17
0.1
0.5
10 17
Typ
10
2000
300
nk
100
si
10
at
he
Without Heatsink
Natural Cooling
120
ite
0.5
fin
In
160
ith
3
10 ms
m
s
0.1
10
1000
10
10
100
P c T a Derating
0m
20
p)
Time t(ms)
10
0.1
200
20
0.5
50
30
0.1
(V C E =12V)
0
0.02
Typ
50
125C
0.5
300
0.1
(V C E =4V)
20
0.02
Tem
I C =15A
10A
100
5A
Temp
(Case
50mA
10
se
100mA
(Ca
20 0m A
10
15
125
300m
(V C E =4V)
17
mA
3.0 +0.3
-0.1
j - a ( C/W)
500

a. Part No.
b. Lot No.

5A
1.
15
mA
0.65 +0.2
-0.1
5.450.1
B
IC
(A)
0
70
2
3
5.450.1
RL
()
1A
1.05 +0.2
-0.1
VCC
(V)
17
2.1
2-3.20.1
6.00.2
36.40.3
30C
Tstg
(Ta=25C)
25C
Symbol
4.0max
80
40
5
0
Without Heatsink
0
25
50
75
100
125
150
81
2SC3890
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
100max
IEBO
VEB=10V
100max
V(BR)CEO
IC=25mA
400min
hFE
VCE=4V, IC=3A
10 to 30
IB
VCE(sat)
IC=3A, IB=0.6A
0.5max
PC
30(Tc=25C)
VBE(sat)
IC=3A, IB=0.6A
1.3max
Tj
150
fT
VCE=12V, IE=0.5A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
50typ
pF
3.9
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
66
10
0.3
0.6
1max
3max
0.5max
12
0.05
0.1
Typ
Swi tchi ng T im e
50
10
0.5
0.5
0.5
p)
0.2
t on
0.1
0.2
0.5
0.4
0.3
10
10
P c T a Derating
fin
ite
he
at
si
nk
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
20
In
1000
ith
0.5
100
Without Heatsink
Natural Cooling
1.2
30
1.0
Time t(ms)
0.8
0.5
0.6
20
0.5
tf
20
10
Tem
5 7
10
se
t s tg
V C C 200V
I C :I B1 :I B 2 =10:1:2
7
5
70
0.1
(V C E =4V)
0.05
C
5
7
0.02
V C E (sat)
0
0.02
(Case
j - a ( C/W)
125C
emp)
25
M aximu m Power Dissi pation P C (W)
Temp)
C (Case
(Ca
100mA
e Temp)
55C (Cas
200 mA
125
6
V B E (sat)
300 mA
(V C E =4V)
as
e
2 5 Tem
p)
C
40 0m A
(I C /I B =5)
(C

I B=

a. Part No.
b. Lot No.
B C E
800
mA
600m
2.40.2
2.20.2
VCC
(V)
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
1.350.15
mp)
Tstg
3.30.2
a
b
e Te
(Cas
7(Pulse14)
IC
55C
10
emp
400
VEBO
4.20.2
2.8 c0.5
se T
VCEO
10.10.2
(Ca
ICBO
25C
4.00.2
VCB=500V
500
0.80.2
Unit
16.90.3
Ratings
VCBO
(Ta=25C)
Conditions
Unit
0.2
Symbol
Ratings
13.0min
Symbol
8.40.2
10
Without Heatsink
2
0.1
5
10
50
100
82
500
0.1
5
10
50
100
500
25
50
75
100
125
150
2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
ICBO
VCB=800V
100max
VCEO
550
IEBO
VEB=7V
100max
V(BR)CEO
IC=10mA
550min
10(Pulse15)
hFE
VCE=4V, IC=5A
10 to 28
VCE(sat)
IC=5A, IB=1A
0.5max
PC
120(Tc=25C)
VBE(sat)
IC=5A, IB=1A
1.2max
Tj
150
fT
VCE=12V, IE=1A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
105typ
pF
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
50
10
0.75
1.5
1max
5max
0.5max
0.5
10
10
t s tg
5
V C C 250V
I C :I B1 :I B 2 =10:1.5:3
1
0.5
t on
tf
0.1
0.2
0.5
10
10
55C
(Case
Temp)
Temp
0.5
0.1
10
100
1000
Time t(ms)
P c T a Derating
120
500
1000
nk
100
si
0.02
50
at
500 600
he
100
ite
0.05
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
fin
0.05
0.1
In
Without Heatsink
Natural Cooling
1
0.5
100
ith
50
1.2
10
0
0.5
0.02
10
1.0
M aximu m Power Dissipa tion P C (W)
1m
0.8
ms
0.6
20
10
0.4

20
DC
0.2
0.1
5 5 C
Swit ching Time
25 C
10
125 C
10
p)
10
50
0.5
em
(V C E =4V)
0.1
eT
C (
55
0.05
(Case
)
mp
C
5
V C E (sat)
0.05 0.1
5
0.02
Cas
Temp
12
0
0.02
(Case
j- a ( C/W)
125C
125
I B =100mA
p)
ase Tem
25C (C
Te
200mA
e Temp)
55C (Cas
se
400m A
(V CE =4V)
V B E (sat)
(C
a
60 0m A
1.4
10
80 0m A
5.450.1
C
(I C /I B =5)
25
1A
0.65 +0.2
-0.1

a. Part No.
b. Lot No.

Base-Emitter Saturation Voltage V B E (s at) (V )
2A
2
3
RL
()
1.
3.20.1
5.450.1
VCC
(V)
10
2.00.1
1.05 +0.2
-0.1
4.80.2
IB
Tstg
25C
IC
15.60.4
9.6
1.8
Unit
900
5.00.2
Unit
Ratings
2.0
Ratings
VCBO
VEBO
(Ta=25C)
Conditions
19.90.3
Symbol
4.0
4.0max
Symbol
20.0min
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
83
2SC4020
IEBO
VEB=7V
100max
V(BR)CEO
IC=10mA
800min
3(Pulse 6)
hFE
VCE=4V, IC=0.7A
10 to 30
VEBO
IB
1.5
VCE(sat)
IC=0.7A, IB=0.14A
0.5max
PC
50(Tc=25C)
VBE(sat)
IC=0.7A, IB=0.14A
1.2max
Tj
150
fT
VCE=12V, IE=0.3A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
40typ
Tstg
10.20.2
0.65 +0.2
-0.1
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
357
0.7
10
0.1
0.35
1max
5max
1max
60mA
I B =20mA
V B E (sat)
0.1
0.5

6
5
50
25C
30C
Sw it ching Time
10
0.5
t s tg
VCC 250V
IC:IB1: IB2=2:0.3:1 Const.
1
tf
0.5
t on
0.2
0.1
0.5
P c T a Derating
500
1000
nk
100
30
si
0.1
50
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
40
at
1000
1000 2000
50
0.5
100
he
500
10
ite
Without Heatsink
Natural Cooling
100
fin
0.3
In
0.5
1.2
ith
1.0
0.8
Time t(ms)
5
0
0.6
0.5
10
84

10
0.1
50
10
0.4
125C
0.1
0.2
(V C E =4V)
0.05
2
0.02
mp)
V C E (sat)
0
0.03 0.05
j- a ( C/W)
e Te
100mA
(Cas
140mA
(V C E =4V)
125C
200 mA
300m A
(I C /I B =5)
40 0m A
1.4

a. Part No.
b. Lot No.

2.5
B C E
IC
(A)
50
1.35
2.5
RL
()
pF
VCC
(V)
mA
2.00.1
3.750.2
4.80.2
3.00.2
100max
16.00.7
VCB=800V
mp)
ase Tem
p)
800
ICBO
30C (C
VCEO
Unit
ase Te
Ratings
25C (C
900
(Ta=25C)
Conditions
8.80.2
VCBO
Symbol
4.0max
Unit
IC
(Ta=25C)
Ratings
Symbol
12.0min
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
2SC4024
High hFE
LOW VCE (sat)
IEBO
VEB=15V
10max
V(BR)CEO
IC=25mA
50min
VCE=4V, IC=1A
300 to 1600
VCE(sat)
IC=5A, IB=0.1A
0.5max
PC
35(Tc=25C)
fT
VCE=12V, IE=0.5A
24typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
150typ
pF
55 to +150
1.350.15
1.350.15
2.54

RL
()
IC
(A)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
20
0.1
0.1
0.5typ
2.0typ
0.5typ
5mA
0.5
10A
0.01
0.1
(V C E =4V)
Typ
10
1 2 5 C
500
1000
25C
30
100
0.02
0.1
0.5
10
0.5
0.3
10
10
10
0m
100
10
nk
50
150x150x2
si
10
at
he
ite
0.2
10
20
fin
Without Heatsink
Natural Cooling
In
30
ith
DC
0.5
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
10
1000
P c T a Derating
Typ
10
100
Time t(ms)
40
1m
30
20
1.2
30
1.0
(V C E =12V)
0.5
0.5
500
1000
0
0.05 0.1
mp
I C= 1 A
(V C E =4V)
0.5
Te
5A
0
0.002
0.1
3A
100
0.02
se
1.0
(Ca
10mA
15mA
j- a ( C/W)
20m A
(V CE =4V)
10
1.5
125
30mA
25mA
I B =35m A

a. Part No.
b. Lot No.
B C E
10
2.40.2
2.20.2
VCC
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
mp)
Tstg
13.0min
IB
3.30.2
a
b
e Te
hFE
(Cas
10
emp
IC
30C
se T
15
4.20.2
2.8 c0.5
(Ca
50
VEBO
25C
VCEO
10.10.2
4.00.2
ICBO
0.80.2
Unit
10max
0.2
Ratings
VCB=100V
Unit
100
3.9
Conditions
Symbol
Ratings
VCBO
(Ta=25C)
8.40.2
Symbol
16.90.3
Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
100x100x2
50x50x2
2
0
Without Heatsink
0
25
50
75
100
125
150
85
2SC4064
V(BR)CEO
IC
12
hFE
VEB=6V
10max
IC=25mA
50min
VCE=1V, IC=6A
50min
IB
VCE(sat)
IC=6A, IB=0.3A
0.35max
PC
35(Tc=25C)
fT
VCE=12V, IE=0.5A
40typ
MHz
150
COB
VCB=12V, f=1MHz
180typ
pF
55 to +150
Tj
Tstg
10.10.2
1.350.15
1.350.15
6
20mA
4
10mA
I B =5mA
0.8
1.6
2.4
3.2
4.8
10
1.0
0.5
9A
0
0.002
0.01
0.1
(V C E =1V)
1000
125C
500
Typ
100
50
500
25C
3 0C
100
50
20
0.02
10 12
0.1
10 12
0.5
0.3
10
40
20
ite
he
86
10 12
10
50
100
nk
si
0.05
1
at
150x150x2
10
100x100x2
50x50x2
0.1
0.5
fin
Without Heatsink
Natural Cooling
In
0.5
30
ith
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
0m
10
DC
20
10
10
10
1m
Typ
1000
P c T a Derating
30
30
100
Time t(ms)
(V C E =12V)
1.0 1.1
0.5
0
0.05 0.1
1000
(V C E =1V)
6A
3A
I C= 1 A
5.6 6
0.1
12A
20
0.02
p)
40mA
(V CE =1V)
12
Tem
1.3
se
60mA
0.4typ
20
100m A
10
1.4typ
B C E
12
0.6typ
0.12
0.12

a. Part No.
b. Lot No.
tf
(s)
(Ca
10
tstg
(s)
125
ton
(s)
IB2
(A)
IB1
(A)
VBB2
(V)
VBB1
(V)
2.40.2
2.20.2
j - a ( C/W)
24
IC
(A)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
RL
()
3.30.2
a
b

VCC
(V)
4.20.2
2.8 c0.5
e Te
mp)
(Case
Temp
)
IEBO
Unit
100max
30C
Ratings
VCB=50V
4.00.2
50
VEBO
Conditions
0.80.2
VCEO
Symbol
0.2
ICBO
(Cas
3.9
50
25C
Unit
VCBO
(Ta=25C)
16.90.3
Ratings
8.40.2

Symbol
Application : DC Motor Driver and General Purpose
13.0min
LOW VCE (sat)
2
0
Without Heatsink
0
25
50
75
100
125
150
2SC4065
12
IC
VEB=6V
60max
mA
IC=25mA
60min
hFE
VCE=1V, IC=6A
50min
IC=6A, IB=1.3A
0.35max
VECO=10A
2.5max
IB
VCE(sat)
PC
35(Tc=25C)
VFEC
Tj
150
fT
VCE=12V, IE=0.5A
24typ
MHz
COB
VCB=10V, f=1MHz
180typ
PF
Tstg
55 to +150
1.350.15
1.350.15
60mA
8
40mA
6
20mA
I B =10mA
2
10
1.0
0.5
6A
0
0.005 0.01
0.1

(V C E =1V)
400
100
50
10
5
12
100
25
50
Typ
10
5
3
0.02
10 12
0.1
10 12
5
0.5
0.2
10
(V C E =12V)
40
fin
ite
si
10 12
nk
100x100x2
50x50x2
Without Heatsink
0.05
0.5
at
150x150x2
10
0.1
0
0.05 0.1
he
Without Heatsink
Natural Cooling
20
In
0.5
30
ith
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
0m
10
DC
20
10
10
10
1m
Typ
1000
P c T a Derating
30
30
100
Time t(ms)
1.0 1.1
0.5
400
9A
(V C E =1V)
3A
I C =1 A
0.1
12A
3
0.02
(V CE =1V)
12
p)
100m A
10
1.3
Tem
0.4typ
se
A
0m
20
m
50
1.4typ
0.6typ

a. Part No.
b. Lot No.
B C E
12
0.12
0.12
tf
(s)
(Ca
10
tstg
(s)
ton
(s)
IB2
(A)
IB1
(A)
125
24
VBB2
(V)
VBB1
(V)
2.40.2
2.20.2
IC
(A)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
j - a ( C/W)
RL
()
3.30.2
a
b

VCC
(V)
4.20.2
2.8 c0.5
e Te
mp)
e Tem
p)
V(BR)CEO
10.10.2
(Cas
IEBO
(Cas
100max
30C
60
VEBO
Unit
VCB=60V
4.00.2
VCEO
Conditions
0.80.2
ICBO
0.2
25C
Unit
60
(Ta=25C)
Ratings
3.9
Ratings
VCBO
8.40.2
Symbol
Symbol
( 400 )
Application : DC Motor Driver and General Purpose
16.90.3
13.0min
Built-in Diode at CE
Low VCE (sat)
Equivalent
circuit
10
50
100
2
0
25
50
75
100
125
150
87
2SC4073
VCEO
400
VEBO
10
5(Pulse10)
IC
Conditions
Ratings
Unit
VCB=500V
100max
IEBO
VEB=10V
100max
V(BR)CEO
IC=25mA
400min
hFE
VCE=4V, IC=2A
10 to 30
IB
VCE(sat)
IC=2A, IB=0.4A
0.5max
PC
30(Tc=25C)
VBE(sat)
IC=2A, IB=0.4A
1.3max
Tj
150
fT
VCE=12V, IE=0.3A
10typ
MHz
COB
VCB=10V, f=1MHz
30typ
pF
Tstg
55 to +150
10.10.2
3.30.2
a
b
3.9
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
100
10
0.2
0.4
1max
3max
0.5max

a. Part No.
b. Lot No.
B C E
(I C /I B =5)
V C E (sat)
0
0.01
0.05 0.1
0.5

5
50
t on t s tg t f ( s)
25C
55C
Switching Ti me
10
0.5
1
0.5
t on
tf
0.1
0.1
0.5
20
20
10
10
10
0.3

50
100
88
500
)
mp)
(Cas
nk
Without Heatsink
Natural Cooling
L=3mH
IB2=0.5A
Duty:less than1%
20
si
10
1000
at
0.01
5
100
P c T a Derating
10
Without Heatsink
2
0.01
2
e Te
p)
10
he
0.5
0.05
emp
Tem
ite
Without Heatsink
Natural Cooling
se T
0.5
fin
0.05
1.4
30
0.1
1.2
In
0.1
1.0
ith
0.5
0.8
Time t(ms)
0.6
10
1m
t s tg
V C C 200V
I C :I B 1 :I B 2 =10:1:2
0.4
125C
0.1
0.2
(V C E =4V)
0.05
5
0.01
se
(Ca
(Ca
55C
55
25C
j- a ( C/W)
12
55C (Case Temp)

p)
25C (Case Tem
e Temp)
125C (Cas
125
50mA
1
100mA
V B E (sat)
emp
200mA
eT
300m A
as
IB
4
400 mA
(V C E =4V)
5
25
=8
00
60 0m A
(C

2.40.2
2.20.2
VCC
(V)
4.20.2
2.8 c0.5
4.00.2
ICBO
0.80.2
0.2
Unit
500
8.40.2
Symbol
Ratings
VCBO
(Ta=25C)
16.90.3
Symbol
13.0min
10
50
100
500
25
50
75
100
125
150
2SC4130
Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor)
PC
30(Tc=25C)
Tj
hFE
VCE=4V, IC=3A
10 to 30
VCE(sat)
IC=3A, IB=0.6A
0.5max
VBE(sat)
IC=3A, IB=0.6A
1.3max
150
fT
VCE=12V, IE=0.5A
15typ
MHz
Tstg
55 to +150
COB
VCB=10V, f=1MHz
50typ
pF
200
67
VBB2
(V)
VBB1
(V)
IB2
(A)
tstg
(s)
ton
(s)
0.6
0.3
tf
(s)
2.2max
1max
0.5max
(I C /I B =5)
50mA
(C
125C
V C E (sat)
0
0.02
0.05
0.1
0.5
as
10
0.5
1
0.5
t on
tf
0.1
0.2
0.5
1.2
0.5
0.3
10
100
1000
Time t(ms)
P c T a Derating
30
si
nk
0.05
at
Without Heatsink
Natural Cooling
L=3mH
IB2=0.5A
Duty:less than 1%
0.1
he
Without Heatsink
Natural Cooling
ite
0.1
0.5
20
fin
0.5
In
ith
1.0
DC
1m
0.8
10
10
0.6
20
10
0.4
20
10
0.2
t s tg
V C C 200V
I C :I B 1 :I B2 =10:1:2
0.05
55C
Swit ching Time
25C
0.1
125C
0.05
mp
5 7
(V C E =4V)
2
0.02
Te
50
se
j- a ( C/W)
55C (Case Temp)

p)
25C (Case Tem
e Temp)
125C (Cas
5C
V B E (sat)
1
12
100m A
200 mA
p)
C
em
IB
400mA
(V C E =4V)
25
60 0m A
=1

40
0m
10 00 m A

a. Part No.
b. Lot No.
B C E
2.40.2
2.20.2
IB1
(A)
10
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
(Ca
IC
(A)
RL
()
1.350.15
2.54

VCC
(V)
3.30.2
a
b
3.9
IC
16.90.3
400min
mp)
IB
100max
IC=25mA
e Te
VEB=10V
V(BR)CEO
(Cas
7(Pulse14)
IEBO
4.20.2
2.8 c0.5
4.00.2
10.10.2
0.80.2
10
0.2
400
VEBO
100max
p)
VCEO
VCB=500V
55C
ICBO
Tem
Unit
ase
500
Ratings
C (C
VCBO
(Ta=25C)
Conditions
Symbol
25
Unit
8.40.2
Ratings
Symbol
13.0min
10
Without Heatsink
2
0.01
2
10
50
100
500
0.01
2
10
50
100
500
25
50
75
100
125
150
89
2SC4131
LOW VCE (sat)

IEBO
VEB=15V
10max
15
V(BR)CEO
50min
15(Pulse25)
hFE
IC=25mA
60 to 360
VCE=1V, IC=5A
IB
VCE(sat)
IC=5A, IB=80mA
0.5max
PC
60(Tc=25C)
VBE(sat)
IC=5A, IB=80mA
1.2max
Tj
150
fT
VCE=12V, IE=1A
18typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
210typ
pF
3.30.2
a
b
3.3
3.0
1.75
1.05 +0.2
-0.1

IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
20
10
0.08
0.08
0.5typ
2.0typ
0.4typ
I B =7mA
0
0.002
0.01
0.1

(V C E =1V)
Typ
12 5 C
500
2 5 C
3 0 C
100
1
70
0.02
10 15
0.1
10
at
si
20
nk
10
he
ite
40
fin
In
10
1000
ith
0m
Without Heatsink
0.4
5
100
DC
10
10
Without Heatsink
Natural Cooling
Collector C urrent I C (A)
0.3
P c T a Derating
0.5
60
t on
0.5
Time t(ms)
10
tf
90
10 15
1m
0.5
0.1
0.08
0.1
40
1.5
1.0
V C C 20V
I C =5A
I B1 =I B 2
=80mA
t stg
0.5
1000
100
Switching Time
1000
(V C E =1V)
0.1
70
0.02
5A
3A
I C =1 A
500
10A
mp)
15A
mp
0.5
Te
15mA
se
25mA
10
(Ca
1.0
40mA
(V C E =1V)
125
80mA
12

a. Part No.
b. Lot No.
15
1.3
85mA
3.35
1.5
j - a ( C/W)
15
4.4

0.65 +0.2
-0.1
5.450.1
1.5
RL
()
0.8
2.15
5.450.1
VCC
(V)
3.45 0.2
e Te
Tstg
5.50.2
(Cas
IC
15.60.2
30C
VEBO
0.80.2
5.5
10max
1.6
VCB=100V
50
ICBO
emp
VCEO
Unit
se T
Ratings
(Ca
100
(Ta=25C)
Conditions
Symbol
25C
VCBO
9.50.2
Unit
23.00.3
Ratings
Symbol
16.2
Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
50
100
3.5
0
50
100
150
2SC4138
Unit
ICBO
VCB=500V
100max
VCEO
400
IEBO
VEB=10V
100max
10
V(BR)CEO
IC=25mA
400min
10(Pulse20)
hFE
VCE=4V, IC=6A
10 to 30
VCE(sat)
IC=6A, IB=1.2A
0.5max
PC
80(Tc=25C)
VBE(sat)
IC=6A, IB=1.2A
1.3max
Tj
150
fT
VCE=12V, IE=0.7A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
85typ
pF
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
33.3
10
0.6
1.2
1max
3max
0.5max
0.1
0.5

10
25C
55C
10
0.1
0.5
10
t s tg
V C C 200V
I C :I B1 :I B 2 =10:1:2
1
0.5
t on
tf
0.1
0.1
0.5
10
0.1
5
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
10
50
100
500
40
)
emp
mp)
se T
(Cas
55C
nk
60
si
e Te
Te
P c T a Derating
at
500
1000
he
100
0.5
100
ite
50
10
fin
0.1
10
In
Without Heatsink
Natural Cooling
mp
0.3
ith
0.5
se
0.5
1.2
80
10
1.0
Time t(ms)
10
0.8
10
0.6
30
30
0.4
1m
0.2
t o n t s tg t f ( s)
125C
Switching Ti me
100
0.05
(V C E =4V)
5
0.02
(Ca
10
(Ca
V C E (sat)
0.05
50
0
0.02
I B =100m A
V B E (sat)
25C
200m A
125
400mA
(V C E =4V)
8
600 mA
1.4
10
j- a ( C/W)
5.450.1
C
(I C /I B =5)
1.4
1A
0.65 +0.2
-0.1

a. Part No.
b. Lot No.

2
3
RL
()
1.2
2.00.1
3.20.1
5.450.1
VCC
(V)
10
4.80.2
1.05 +0.2
-0.1
15.60.4
9.6
IB
Tstg
4.0
IC
19.90.3
VEBO
Symbol
1.8
Ratings
5.00.2
Conditions
500
2.0
Unit
VCBO
Symbol
(Ta=25C)
4.0max
Ratings
20.0min
20
3.5
0
Without Heatsink
0
25
50
75
100
125
150
91
2SC4139
IEBO
VEB=10V
100max
A
V
10
V(BR)CEO
IC=25mA
400min
15(Pulse30)
hFE
VCE=4V, IC=8A
10 to 30
IB
VCE(sat)
IC=8A, IB=1.6A
0.5max
PC
120(Tc=25C)
VBE(sat)
IC=8A, IB=1.6A
1.3max
Tj
150
fT
VCE=12V, IE=1.5A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
85typ
pF
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
25
10
0.8
1.6
1max
3max
0.5max
0.5
5
5
10
20

8
50
55C
10
0.1
0.5
10 15
5
t s tg
25C
Sw it ching Time
125C
V C C 200V
I C :I B1 :I B2 =10:1:2
1
0.5
t on
tf
0.1
0.5
10
15
0.1
10
Temp)
P c T a Derating

100
500
nk
50
si
10
at
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
100
he
1000
ite
1
5
100
fin
500
(Case
0.5
In
100
92
ith
10
1.2
Without Heatsink
Natural Cooling
1.0
120
0.8
Time t(ms)
10
10
0.6
50
50
0.4

50
10
0.2
(V C E =4V)
0.05
mp)
e Te
V C E (sat)
0.1
5
0.02
Cas
Temp
C (
(Case
12
0
0.03 0.05
125C
0.5
Temp)
j- a ( C/W)
ase
25C (C
125
I B =100mA
e Temp)
55C (Cas
em
p)
C
200mA
1.0
eT
400m A
8
V B E (sat)
25
600mA
10
(V CE =4V)
10
1.5
as
800 mA
1.4
(I C /I B =5)
1 .2 A
5A

a. Part No.
b. Lot No.

1.
0.65 +0.2
-0.1
5.450.1
B
VCC
(V)
15
2
3
1.05 +0.2
-0.1
3.20.1
55C
Tstg
IC
Temp
VEBO
2.00.1
(Case
400
4.80.2
25C
VCEO
15.60.4
9.6
1.8
100max
5.00.2
VCB=500V
2.0
ICBO
500
19.90.3
Unit
VCBO
(Ta=25C)
Ratings
Unit
20.0min
Symbol
Conditions
Ratings
Symbol
4.0max
4.0
50
3.5 Without Heatsink

0
0
25
50
75
100
125
150
2SC4140
Unit
VCB=500V
100max
VCEO
400
IEBO
VEB=10V
100max
10
V(BR)CEO
IC=25mA
400min
18(Pulse36)
hFE
VCE=4V, IC=10A
10 to 30
VCE(sat)
IC=10A, IB=2A
0.5max
PC
130(Tc=25C)
VBE(sat)
IC=10A, IB=2A
1.3max
Tj
150
fT
VCE=12V, IE=2.0A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
165typ
pF
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
20
10
10
1max
3max
0.5max
12
0.5
55C
10
10 18
1
0.5
t on
tf
0.1
0.2
0.5
10
10
18
0.1
10
mp)
e Te
(Cas
1000
P c T a Derating
130
50
100
500
nk
10
si
0.03
5
at
500
he
0.1
0.05
ite
0.1
Without Heatsink
Natural Cooling
L=3mH
IB2=0.5A
Duty:less than 1%
fin
1
0.5
100
In
0.05
100
ith
Without Heatsink
Natural Cooling
100
mp)
mp
Te
0.5
1
0.5
50
1.2
Time t(ms)
10
10
1.0
DC
10
0.8
1m
ms
0.6
50
10
0.4

50
0.2
0.03
5
t s tg
V C C 200V
I C :I B1 :I B 2 =10:1:2
Switching Ti me
25C
10
0.5
10 18
125C
0.1
se
(V C E =4V)
50
e Te
55
0.05
(Ca
V C E (sat)
5
0.02
(Cas
Temp
(Case
0
0.02 0.05 0.1
125C
j - a (C /W)
e Temp)
25C (Cas
12
55C
I B =100mA
Temp)
55C (Case
eT
em
p)
25
C
200mA
4
V B E (sat)
1
as
400m A
16
(C
600mA
(V CE =4V)
18
125

12
1.4
(I C /I B =5)
1.4
800 mA

a. Part No.
b. Lot No.
1.2 A
0.65 +0.2
-0.1
5.450.1
B
IC
(A)
16
2
3
5.450.1
RL
()
1 .6 A
3.20.1
1.05 +0.2
-0.1
VCC
(V)
18
2.00.1
4.80.2
IB
Tstg
15.60.4
9.6
25C
IC
4.0
VEBO
Symbol
1.8
Ratings
ICBO
5.00.2
Conditions
2.0
Unit
500
19.90.3
Ratings
VCBO
Symbol
(Ta=25C)
4.0max
20.0min
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
93
2SC4153
Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor)
120min
hFE
VCE=4V, IC=3A
70 to 220
IB
VCE(sat)
IC=3A, IB=0.3A
0.5max
PC
30(Tc=25C)
VBE(sat)
IC=3A, IB=0.3A
1.2max
Tj
150
fT
VCE=12V, IE=0.5A
30typ
MHz
COB
VCB=10V, f=1MHz
110typ
pF
3.9
1.350.15
1.350.15
2.54
mA
100
mA
5
60m
40mA
20m A
I B =10mA
0
0.005 0.01
0.1

(V C E =4V)
Typ
100
50
12 5 C
300
25C
100
30
20
0.01
5 7
50
0.1
0.5
5 7
5
0.5
0.2
10
100
1000
Time t(ms)
1.0 1.1
0.5
300
5A
3A
I C = 1A
(V C E =4V)
0.5
0.1
(V C E =4V)
20
0.01
p)
150
0.5max
Tem
mA
3max
se
200
0.5max

a. Part No.
b. Lot No.
B C E

7
0.6
0.3
tf
(s)
(Ca
10
tstg
(s)
ton
(s)
IB2
(A)
IB1
(A)
125
16.7
50
VBB2
(V)
VBB1
(V)
IC
(A)
2.40.2
2.20.2
j - a (C /W)
RL
()
VCC
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
55 to +150
Temp
Tstg
3.30.2
a
b
mp)
100max
4.20.2
2.8 c0.5
(Case
7(Pulse14)
IC
VEB=8V
IC=50mA
10.10.2
30C
V(BR)CEO
4.00.2
IEBO
100max
0.80.2
Unit
VCB=200V
0.2
120
VEBO
Conditions
e Te
VCEO
Symbol
(Cas
ICBO
25C
16.90.3
Unit
200
13.0min
Ratings
VCBO
(Ta=25C)
Ratings
8.40.2

Symbol
P c T a Derating
(V C E =12V)
20
40
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
he
100x100x2
at
si
10
nk
150x150x2
ite
0.1
fin
Without Heatsink
Natural Cooling
In
0.5
ith
20
10
ms
20
10
30
Maxim um Power Dissipatio n P C (W)
10
Typ
10
30
50x50x2
Without Heatsink
2
0
0.01
0.05
0.1
94
10
50
100
200
25
50
75
100
125
150
2SC4296
400min
hFE
VCE=4V, IC=6A
10 to 30
23.00.3
100max
IC=25mA
IB
VCE(sat)
IC=6A, IB=1.2A
0.5max
PC
75(Tc=25C)
VBE(sat)
IC=6A, IB=1.2A
1.3max
Tj
150
fT
VCE=12V, IE=0.7A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
85typ
pF
3.3
3.0
1.75
1.05 +0.2
-0.1
5.450.1

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
33
10
0.6
1.2
1max
3max
0.5max
1.4
I B = 100mA
0.1
0.5
10

10
25C
55C
10
0.1
0.5
10
t s tg
V C C 200V
I C :I B 1 :I B2 =10:1:2
1
0.5
t on
tf
0.1
0.1
0.5
10
0.5
0.3
P c T a Derating
100
500
nk
50
si
10
40
at
0.02
5
he
500
ite
0.02
fin
0.1
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
60
In
1
0.5
0.05
100
1000
ith
0.05
50
100
80
Without Heatsink
Natural Cooling
10
10
Time t(ms)
10
0.5
0.1
1.2
Collect or Cur re nt I C (A)
10
10
1.0
50
0.8
30
1m
0.6

30
10
0.4
125C
Sw it ching Time
100
0.2
(V C E =4V)
0.05
5
0.02
V C E (sat)
0.05
50
0
0.02
6
mp
V B E (sat)
Te
200m A
8
1
se
400mA
(V C E =4V)
10
(Ca
600 mA

a. Part No.
b. Lot No.
125
1A
3.35
1.5
(I C /I B =5)
j - a (C/W)
1.2

10
4.4
0.65 +0.2
-0.1
5.450.1
1.5
0.8
2.15
Tstg
3.30.2
a
b
emp
VEB=10V
V(BR)CEO
3.45 0.2
mp)
10(Pulse20)
IC
IEBO
5.50.2
se T
15.60.2
e Te
10
(Cas
400
VEBO
100max
55C
VCEO
VCB=500V
0.80.2
ICBO
5.5
Unit
1.6
500
Ratings
(Ca
VCBO
(Ta=25C)
Conditions
Symbol
25C
Unit
16.2
Ratings
Symbol
9.50.2
20
3.5
0
Without Heatsink
0
50
100
150
95
2SC4297
VCB=500V
100max
VCEO
400
IEBO
VEB=10V
100max
10
V(BR)CEO
IC=25mA
400min
12(Pulse24)
hFE
VCE=4V, IC=7A
10 to 30
IB
VCE(sat)
IC=7A, IB=1.4A
0.5max
PC
75(Tc=25C)
VBE(sat)
IC=7A, IB=1.4A
1.3max
Tj
150
fT
VCE=12V, IE=1A
10typ
MHz
COB
VCB=10V, f=1MHz
105typ
pF
3.30.2
a
b
3.3
3.0
1.75
1.05 +0.2
-0.1
5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
28.5
10
0.7
1.4
1max
3max
0.5max
12
V C E (sat)
0
0.02
0.05 0.1
0.5
10

8
50
30C
10
0.5
10 12
5
t s tg
V C C 200V
I C :I B 1 :I B2 =10:1:2
1
0.5
t on
tf
0.1
0.5
30
10
0.1
10
100
1000
Time t(ms)
P c T a Derating
80
100
500
nk
50
si
10
40
at
0.1
5
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
he
500
0.5
ite
0.1
60
fin
Without Heatsink
Natural Cooling
In
mp)
0.5
ith
100
1.2
10
50
1.0
10
10
0.8
0.6
30
10
0.4
0.5
0.2
96
25C
Swi tchi ng T im e
125C
0.1
(V C E =4V)
0.05
p)
5
0.02
Temp
125C
e Te
mp)
Te
(Case
Tem
e Temp)
25C (Cas
(Case
I B =100mA
2
Temp)
se
200mA
55C (Case
(Ca
400m A
(V C E =4V)
125
10
V B E (sat)
j - a ( C/W)
60 0m A

a. Part No.
b. Lot No.
12
80 0m A
10
3.35
(I C /I B =5)
as
e
2 5 Temp
)
C
1A
1.5
(C
12
4.4

0.65 +0.2
-0.1
5.450.1
1.5
VCC
(V)
0.8
2.15
55C
55 to +150
3.45 0.2
(Cas
Tstg
5.50.2
25C
IC
15.60.2
16.2
VEBO
Symbol
0.80.2
Unit
ICBO
5.5
Ratings
1.6
Conditions
500
23.00.3
Unit
VCBO
Symbol
(Ta=25C)
Ratings
9.50.2
20
3.5
0
Without Heatsink
0
50
100
150
2SC4298
100max
IEBO
VEB=10V
100max
10
V(BR)CEO
IC=25mA
400min
15(Pulse30)
hFE
VCE=4V, IC=8A
10 to 30
IB
VCE(sat)
IC=8A, IB=1.6A
0.5max
PC
80(Tc=25C)
VBE(sat)
IC=8A, IB=1.6A
1.3max
Tj
150
fT
VCE=12V, IE=1.5A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
85typ
pF
3.3
3.0
1.75
1.05 +0.2
-0.1
5.450.1

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
25
10
0.8
1.6
1max
3max
0.5max
Temp
12
0.5
10
20
Sw it ching Time
55C
10
0.5
10 15
5
t s tg
25C
V C C 200V
I C :I B1 :I B2 = 10:1:2
1
0.5
t on
tf
0.1
0.5
0.2
0.4
10
15
0.5
0.1
10
1000
P c T a Derating
In
fin
ite
he
40
at
si
nk
ith
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
60
Without Heatsink
Natural Cooling
10
100
80
1.2
Time t(ms)
10
10
1.0
50
50
0.8
0.6
125C
0.1
50
(V C E =4V)
0.05
mp)
2
5
5
5
0.02
V C E (sat)
0.1
e Te
(Case
Temp)
125C
0.5
Temp)
Cas
ase
25C (C
0
0.03 0.05
(V CE =4V)
C (
e Temp)
55C (Cas
j- a ( C/W)
125
I B =100mA
200mA
1.0
em
p)
C
400mA

a. Part No.
b. Lot No.
8
V B E (sat)
eT
600m A
10
25
800 mA
3.35
1.5
10
1.5
as
1. 2A
5A

1.
4.4
(I C /I B =5)
15
0.65 +0.2
-0.1
5.450.1
1.5
0.8
2.15
(Case
Tstg
3.30.2
a
b
55C
IC
Temp
VEBO
3.45 0.2
(Case
400
5.50.2
25C
VCEO
15.60.2
16.2
0.80.2
VCB=500V
500
5.5
ICBO
VCBO
1.6
Unit
Symbol
23.00.3
Ratings
Unit
(Ta=25C)
Conditions
Ratings
Symbol
9.50.2
20
Without Heatsink
1
5
10
50
100
500
1
5
10
50
100
500
3.5
0
25
50
75
100
125
150
97
2SC4299
Unit
VCB=800V
100max
VCEO
800
IEBO
VEB=7V
100max
V(BR)CEO
IC=10mA
800min
3(Pulse6)
hFE
VCE=4V, IC=1A
10 to 30
IB
1.5
VCE(sat)
IC=1A, IB=0.2A
0.5max
PC
70(Tc=25C)
VBE(sat)
IC=1A, IB=0.2A
1.2max
Tj
150
fT
VCE=12V, IE=0.3A
6typ
MHz
COB
VCB=10V, f=1MHz
50typ
pF
3.30.2
a
b
3.3
3.0
1.75
1.05
5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
250
10
0.15
0.5
1max
5max
1max
I B =50mA
125C
Temp)
55
V C E (sat)
0.05
0.1
12
0.5
5C
55C
10
t s tg
VCC 250V
IC:IB1:IB2
=2:0.3:1 Const.
1
tf
0.5
t on
0.2
0.1
0.5
10
0.5
0.3
10
70
60
40
he
at
si
nk
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
ite
50
fin
Without Heatsink
Natural Cooling
P c T a Derating
10
0.5
1000
In
0.5
100
ith
1.2
Time t(ms)
1.0
10
0.8
0.6
0.4
Sw it ching Time
25C
0.5
0.2
t on t st g t f I C Characteristics (Typical)
125C
0.1
50
0.05
p)
(Case
2
mp)
e Temp)
25C (Cas
(V C E =4V)
5
0.01
(V CE =4V)
e Te
p)
55C (Case Tem
V B E (sat)
0
0.02
3.35
ase Tem
(Cas
100mA
0.65 +0.2
-0.1

a. Part No.
b. Lot No.
125C
200mA
1.5
j- a ( C/W)
300mA
4.4
(I C /I B =5)

400mA
2 5 Cas
eT
C
e m p)
500mA
+0.2
-0.1
5.450.1
1.5
VCC
(V)
0.8
2.15
55C (C
55 to +150
3.45 0.2
mp)
Tstg
5.50.2
ase Te
IC
15.60.2
25C (C
VEBO
0.80.2
Ratings
ICBO
5.5
Conditions
1.6
Unit
900
23.00.3
Ratings
VCBO
Symbol
(Ta=25C)
9.50.2
Symbol
(Ta=25C)
16.2
30
20
10
Without Heatsink
0.1
50
100
500
98
1000
0.1
50
100
500
1000
3.5
0
25
50
75
100
125
150
2SC4300
IEBO
VEB=7V
100max
V(BR)CEO
IC=10mA
800min
5(Pulse10)
hFE
VCE=4V, IC=2A
10 to 30
IB
2.5
VCE(sat)
IC=2A, IB=0.4A
0.5max
PC
75(Tc=25C)
VBE(sat)
IC=2A, IB=0.4A
1.2max
Tj
150
fT
VCE=12V, IE=0.5A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
75typ
pF
3.30.2
a
b
3.3
3.0
1.75
1.05 +0.2
-0.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
125
10
0.3
1max
5max
1max
2
I B =100mA
V B E (sat)
55C (Case Temp)
25C (Case Temp)
e Temp)
125C (Cas
V C E (sat)
0
0.03 0.05
C
125C (
0.1
0.5
as
10
55C
10
t s tg
VCC 250V
IC:IB1:IB2
=2:0.3:1 Const.
tf
0.5
t on
0.2
0.1
0.5
20
10
10
10
80
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
100
500
1000
60
40
nk
0.01
50
P c T a Derating
si
1000
1000
at
500
100
he
100
0.1
ite
50
0.5
Time t(ms)
0.5
0.05
10
fin
0.05
0.01
0.1
1.2
In
Without Heatsink
Natural Cooling
1.0
ith
0.8
0.5
0.1
10
0.6
20
10
0.4
0.2
1m
25C
Switching T im e
125C
10
0.5
50
0.1
(V C E =4V)
0.05
5
0.02
(V CE =4V)
mp)
e Te
200mA

a. Part No.
b. Lot No.
(Cas
3.35
1.5
j- a ( C/W)
300mA
4.4
125C
400 mA
0.65 +0.2
-0.1
5.450.1
(I C /I B =5)
60 0m A
500m A
Te
m p)
25
C
5 5 C

700mA
1.5
5
0.8
2.15
5.450.1
VCC
(V)
3.45 0.2
p)
Tstg
5.50.2
ase Tem
IC
15.60.2
55C (C
VEBO
0.80.2
A
23.00.3
100max
5.5
800
VCB=800V
1.6
VCEO
ICBO
Unit
Temp
900
Ratings
(Case
VCBO
(Ta=25C)
Conditions
Symbol
25C
Unit
16.2
Ratings
9.50.2

Symbol
20
3.5
0
Without Heatsink
0
50
100
150
99
2SC4301
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
Unit
VCB=800V
100max
VCEO
800
IEBO
VEB=7V
100max
V(BR)CEO
IC=10mA
800min
7(Pulse14)
hFE
VCE=4V, IC=3A
10 to 30
IB
3.5
VCE(sat)
IC=3A, IB=0.6A
0.5max
PC
80(Tc=25C)
VBE(sat)
IC=3A, IB=0.6A
1.2max
Tj
150
fT
VCE=12V, IE=1A
6typ
MHz
COB
VCB=10V, f=1MHz
105typ
3.3
3.0
1.05 +0.2
-0.1
1.5
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
83
10
0.45
1.5
1max
5max
1max
0.05
0.1
0.5
10
0.1
0.5
t s tg
5
VCC 250V
I C :I B1 :I B2 =2:0.3:1 Const.
tf
0.5
t on
0.2
0.1
0.5
20
10
p)
0.5
0.1
10
100
1000
P c T a Derating
ite
he
40
at
si
nk
fin
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty :less than1%
60
In
mp)
ith
0.5
1.2
80
Without Heatsink
Natural Cooling
1.0
Time t(ms)
10
0.8
0.6
20
0.4
10
0.2
0.5
Sw it ching Time
55C
0.05
10
5
0.02
e Te
5 7
50
(Cas
5C
(V C E =4V)
12
125C
25C
Temp
)
emp
12
V C E (sat)
0
0.02
(C
j - a (C /W )
emp
ase T
eT
I B =100mA
125C
(V CE =4V)
as
200mA
p)
ase Tem
25C (C
)
(Case Temp
(C
300 mA

a. Part No.
b. Lot No.
V B E (sat)
55C
3.35
1.5
(I C /I B =5)
4.4
500mA
0.65 +0.2
-0.1
5.450.1
25

700m A
0.8
2.15
5.450.1
VCC
(V)
1A
1.75
pF
3.30.2
a
b
ase Tem
55 to +150
3.45 0.2
(Case
Tstg
5.50.2
55C (C
IC
15.60.2
25C
VEBO
0.80.2
Ratings
ICBO
5.5
Conditions
1.6
Unit
900
23.00.3
Ratings
VCBO
Symbol
(Ta=25C)
9.50.2
Symbol
16.2
20
Without Heatsink
0.1
50
100
500
100
1000
0.1
50
100
500
1000
3.5
0
25
50
75
100
125
150
2SC4304
Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor)
hFE
800min
VCE=4V, IC=0.7A
10 to 30
IB
1.5
VCE(sat)
IC=0.7A, IB=0.14A
0.5max
PC
35(Tc=25C)
VBE(sat)
IC=0.7A, IB=0.14A
1.2max
Tj
150
fT
VCE=12V, IE=0.3A
15typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
50typ
pF
Tstg
3.9
0.1
100mA
I B =50mA
0.7max
V C E (sat)
55C (Case Temp)
25C (Case Temp)
125C (Case Temp)
V B E (sat)
p)
55C (Case Tem
p)
25C (Case Tem
Temp)
125C (Case
0.05
0.1
0.5
7
5
10
0.5
t s tg
V C C 250V
I C :I B1 :I B 2 =10:1.5:5
55C
Sw it ching Time
25C
0.1
1
tf
0.5
t on
0.1
0.1
0.5
10
10
20
nk
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
30
si
1000
P c T a Derating
at
500
1000
he
100
100
ite
0.3
fin
50
0.5
In
0.01
0.005
50
10
ith
0.1
0.01
1.2
0.005
2
1.0
10
ms
=2
10
( Tc
Without Heatsink
Natural Cooling
0.8
35
0.5
0.05
0.6
Time t(ms)
50
1m
DC
0.1
0.05
0.4

10
0.2
0.5
125C
0.05
(V C E =4V)
2
0.01
50
(V C E =4V)
0
0.01
(I C /I B =5)
mp)
200m A
4.0max
0.7max
e Te
300m A
2
2.40.2

a. Part No.
b. Lot No.
B C E
Cas

700mA
500 mA
0.35
tf
(s)
3
tstg
(s)
ton
(s)
C (
10
IB2
(A)
125
0.7
357
IB1
(A)
250
VBB2
(V)
VBB1
(V)
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.20.2
j - a ( C/W)
IC
(A)
RL
()
1.350.15
2.54

VCC
(V)
3.30.2
a
b
p)
100max
e Tem
3(Pulse6)
IC
VEB=7V
IC=10mA
(Cas
V(BR)CEO
4.20.2
2.8 c0.5
4.00.2
IEBO
10.10.2
0.80.2
0.2
800
VEBO
100max
55C
VCEO
VCB=800V
mp)
ICBO
Unit
e Te
Ratings
(Cas
900
(Ta=25C)
Conditions
25C
VCBO
Symbol
16.90.3
Unit
8.40.2
Ratings
Symbol
13.0min
10
Without Heatsink
100
500
1000
2
0
25
50
75
100
125
150
101
2SC4381/4382
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668)
ICBO
VCB=
VEBO
IEBO
IC
V(BR)CEO
150
VEB=6V
200
10max
IC=25mA
150min
200min
hFE
VCE=10V, IC=0.7A
60min
PC
25(Tc=25C)
VCE(sat)
IC=0.7A, IB=0.07A
1.0max
Tj
150
fT
VCE=12V, IE=0.2A
15typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
35typ
pF
Tstg
1.350.15
1.350.15
100
50
1.6
1.2
I B =5mA/Step
0.8
0.4
3.0typ
1.0typ
I C = 0 .5
10
10
100
1000
(V C E =10V)
50
0.1
125 C
2 5 C
3 0 C
100
50
30
0.01
0.1
0.5
10
100
(V C E =12V)
30
In
fin
ite
he
at
si
nk
Without Heatsink
Natural Cooling
1.2SC4381
2.2SC4382
20
ith
0.1
1m
ms
5m
10
20
Typ
P c T a Derating
20
1000
Time t(ms)
1.0
100
0.5
Typ
30
2A
1A
400
30
0.01
(V C E =10V)
400

2
(V C E =10V)
1.5typ

a. Part No.
b. Lot No.
B C E

100
tf
(s)
tstg
(s)
ton
(s)
Temp
10
IB2
(mA)
(Case
IB1
(mA)
VBB2
(V)
125C
20
20
VBB1
(V)
IC
(A)
2.40.2
2.20.2
j - a ( C/W)
RL
()
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

VCC
(V)
3.30.2
a
b
IB
4.20.2
2.8 c0.5
4.00.2
200
10.10.2
e Temp)
150
0.80.2
VCEO
10max
0.2
3.9
200
Unit
55C (Cas
150
Conditions
e Temp)
VCBO
Symbol
25C (Cas
2SC4381 2SC4382
Unit
8.40.2
Symbol
(Ta=25C)
Ratings
2SC4381 2SC4382
16.90.3
Ratings
Application : TV Vertical Output, Audio Output Driver and General Purpose
(Ta=25C)
13.0min
10
Without Heatsink
0
0.01
0.1
0.5
102
1 2
0.01
1
10
100
300
50
100
150
2SC4388
ICBO
VCB=200V
10max
VCEO
180
IEBO
VEB=6V
10max
IC=50mA
180min
VCE=4V, IC=3A
50min
IB
VCE(sat)
IC=5A, IB=0.5A
2.0max
PC
85(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
300typ
55 to +150
hFE Rank
pF
1.75
16.2
Tstg
3.30.2
a
b
3.0
hFE
1.05 +0.2
-0.1
5.450.1
5.450.1
1.5
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.5max
1.8max
0.6max
I B =20mA
I C =10A
0.5
1.0
1.5

(V C E =4V)
300
200
0.5
Typ
50
100
25C
50
30C
20
0.02
10 15
0.1
0.5
10 15
3
1
0.5
0.1
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
30
40
100
10
Typ
he
at
si
nk
Without Heatsink
Natural Cooling
ite
0.5
60
fin
80
In
10
DC
ith
20
0m
10
10
125C
0.1
(V C E =4V)
20
0.02
2.0
mp)
5A
100
e Te
(Cas
50mA
10
25C
100 mA
mp)
20 0m A
10
e Te
(V C E =4V)
Cas
300m
3.35

a. Part No.
b. Lot No.
15
C (
mA
125
0
50
0.65 +0.2
-0.1
1.5
j - a (C /W)
m
00
4.4

1A
15
0.8
2.15
O(50 to 100), P(70 to 140), Y(90 to 180)
3.45 0.2
Temp)
V(BR)CEO
5.50.2
(Case
15
15.60.2
23.00.3
IC
0.80.2
Unit
200
5.5
Unit
Ratings
1.6
Ratings
VCBO
VEBO
(Ta=25C)
Conditions
3.3
Symbol
30C
Symbol
9.50.2
40
20
0.1
0
0.02
0.1
1
10
0.05
3
10
50
100
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
103
2SC4418
IEBO
VEB=10V
100max
V(BR)CEO
IC=25mA
400min
hFE
VCE=4V, IC=1.5A
10 to 30
IB
VCE(sat)
IC=1.5A, IB=0.3A
0.5max
PC
30(Tc=25C)
VBE(sat)
IC=1.5A, IB=0.3A
1.3max
Tj
150
fT
VCE=12V, IE=0.3A
20typ
MHz
COB
VCB=10V, f=1MHz
30typ
pF
Tstg
55 to +150
3.9
0.15
60 0m A
400 mA
200 mA
100 mA
I B =50mA
0.5max
55C (Case Temp)
25C (Case Temp)

125C (Case Temp)
V B E (sat)
1
55C (Case Temp)

Temp)
25C (Case
p)
ase Tem
(C
C
5
12
0.05
0.1
0.5
5
V C C 200V
I C :I B 1 :I B2 =10:1:2
1
tf
t on
0.1
0.1
0.5
0.5
0.4
50
s
1000
P c T a Derating
30
10
si
nk
Without Heatsink
Natural Cooling
L=3mH
IB2=0.5A
Duty:less than 1%
at
0.1
0.05
he
Without Heatsink
Natural Cooling
ite
0.1
0.5
20
fin
0.5
In
ith
10
10
100
DC
1m
10
Time t(ms)
20
20
1.6
t s tg
0.5
0.05
10
1.0
j - a (C /W)
Sw it ching Time
10
0.5
Typ
0.1
100
0.05
(V C E =4V)
2
0.01
50
(V CE =4V)
V C E (sat)
0
0.01
(I C /I B =5)
eT
em
Tem p)
p
e Te )
mp)
1A
4
2.5max
as
1.4 A
2.40.2

a. Part No.
b. Lot No.
B C E
(C

1.8
1max
0.3
tf
(s)
tstg
(s)
5
ton
(s)
IB2
(A)
5C
10
1.5
IB1
(A)
12
133
200
VBB2
(V)
VBB1
(V)
IC
(A)
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.20.2
RL
()
1.350.15
2.54

VCC
(V)
3.30.2
a
b
Cas
se
5(Pulse10)
IC
C (
Ca
10
4.20.2
2.8 c0.5
55
400
VEBO
C(
VCEO
10.10.2
25
ICBO
4.00.2
Unit
100max
0.80.2
Ratings
VCB=500V
Unit
500
16.90.3
Conditions
Symbol
Ratings
VCBO
Symbol
(Ta=25C)
0.2
13.0min
8.40.2
10
Without Heatsink
2
0.01
2
10
50
100
104
500
0.01
5
10
50
100
500
25
50
75
100
125
150
2SC4434
100max
VCEO
400
IEBO
VEB=10V
100max
VEBO
10
V(BR)CEO
IC=25mA
400min
15(Pulse30)
hFE
VCE=4V, IC=8A
10 to 25
VCE(sat)
IC=8A, IB=1.6A
0.7max
PC
120(Tc=25C)
VBE(sat)
IC=8A, IB=1.6A
1.3max
Tj
150
fT
VCE=12V, IE=1.5A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
135typ
pF
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
25
10
1.6
3.2
0.5max
2.0max
0.15max
Switching Ti me
25C
10
0.1
0.5
10 15
t on
0.1
tf
0.05
0.5
10
15
p)
25
C (C
ase
Tem
p)
p)
em
Tem
eT
se
0.5
0.1
10
100
1000
P c T a Derating
120
nk
500
si
100
at
50
he
10
ite
0.1
5
fin
500
0.5
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
In
0.1
ith
Without Heatsink
Natural Cooling
100
Ca
as
15
100
1.0
Time t(ms)
10
50
0.5
10
10
40
(C
0C
10
10
0.5
C(
)
7 5 C
t s tg
1 V C C 200V
I C :I B 1 :I B2 =5:1:2
0.5
40
150C
75C
0.5
V C E (sat)
(V C E =4V)
0.1
10
5
0.05
emp
15
50
eT
0
0.05
Temp)
j - a ( C/W)
ase
50C (C
e Temp)
25C (Cas
e Temp)
as
(C
75C
V B E (sat)
I B =100m A
as
200m A
12
25
400mA
(V C E =4V)
15
14
(C
600 mA
1.4
(I C /I B =5)


a. Part No.
b. Lot No.
1A
0.65 +0.2
-0.1
5.450.1
B
IC
(A)
2
3
5.450.1
RL
()
1.2
3.20.1
1.05 +0.2
-0.1
VCC
(V)
10
2.00.1
4.80.2
IB
Tstg
75
IC
15.60.4
9.6
1.8
Unit
VCB=500V
5.00.2
Ratings
ICBO
2.0
Conditions
4.0
Unit
500
19.90.3
Ratings
VCBO
20.0min
Symbol
(Ta=25C)
4.0max

Symbol
Application : Switching Regulator, Lighting Inverter, and General Purpose
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
105
2SC4445
Unit
VCB=800V
100max
VCEO
800
IEBO
VEB=7V
100max
V(BR)CEO
3(Pulse6)
hFE
IC=10mA
800min
VCE=4V, IC=0.7A
10 to 30
IB
1.5
VCE(sat)
IC=0.7A, IB=0.14A
0.5max
PC
60(Tc=25C)
VBE(sat)
IC=0.7A, IB=0.14A
1.2max
Tj
150
fT
VCE=12V, IE=0.3A
15typ
MHz
COB
VCB=10V, f=1MHz
50typ
pF
3.0
3.3
1.5
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
357
0.7
10
0.1
0.35
0.7max
4max
0.7max
V C E (sat)
0.05
0.1
0.5
7
5
55C
10
0.5
1
tf
0.5
t on
0.1
0.1
0.5
0.3
10
50
p)
nk
si
1000
at
500
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
40
he
100
P c T a Derating
ite
0.05
1000
fin
0.05
100
60
0.5
0.1
mp)
10
Time t(ms)
0.1
106
0.5
In
Without Heatsink
Natural Cooling
1.2
ith
0.5
1.0
10
0.8
50
50
10
0.6

10
10
0.4
t s tg
V C C 250V
I C :I B1 :I B 2 =10:1.5:5
25C
0.2
Sw it ching Time
125C
0.1
(V C E =4V)
0.05
mp)
2
0.01
e Tem
p)
55C (Case Tem
p)
25C (Case Tem
Temp)
125C (Case
(Cas
V B E (sat)
e Te
25C (Case Temp)

125C (Case Temp)
Cas
55C (Case Temp)
50
(V C E =4V)
0
0.01
j - a ( C/W)

a. Part No.
b. Lot No.
55C
50mA
3.35
1.5
C (
100mA
4.4
125
200m A
0.65 +0.2
-0.1
5.450.1
(I C /I B =5)

300m A
500 mA
0.8
2.15
1.05 +0.2
-0.1
RL
()
I B =700mA
1.75
5.450.1
VCC
(V)
3.30.2
a
b
3.45 0.2
e Te
55 to +150
5.50.2
(Cas
Tstg
15.60.2
25C
IC
0.80.2
Ratings
ICBO
5.5
Conditions
23.00.3
Unit
900
VEBO
(Ta=25C)
VCBO
Symbol
Symbol
1.6
Ratings
16.2
9.50.2
20
Without Heatsink
100
500
1000
3.5
0
50
100
150
2SC4466
IEBO
VEBO
V(BR)CEO
IC
hFE
VEB=6V
10max
A
V
IC=50mA
80min
VCE=4V, IC=2A
50min
VCE(sat)
IC=2A, IB=0.2A
1.5max
60(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
110typ
pF
55 to +150
hFE Rank
20.0min
PC
2
3
1.05 +0.2
-0.1
5.450.1
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
0.3
0.3
0.16typ
2.60typ
0.34typ
I B =10mA
2A
0
0.5
1.0
(V C E =4V)
200
125C
Typ
50
100
25C
30C
50
20
0.02
56
0.1
0.5
56
0.5
0.3
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
20
60
10
si
nk
Collector Curr ent I C ( A)
at
Without Heatsink
Natural Cooling
he
0.5
ite
40
fin
10
DC
In
20
ith
Typ
1m
s
ms
0m
s
10
30
10
40
300
0.5
(V C E =4V)
0.1
1.5
30
0.02
mp)
p)
I C =6A
4A
100
e Tem
(Cas
20mA
25C
30mA
e Te
50 mA
(V C E =4V)
Cas
A
80m
C (
125
m
00
j - a ( C/W)
15
0m
1.4

a. Part No.
b. Lot No.

20
0m
0.65 +0.2
-0.1
5.450.1
B
2.00.1
3.20.1
O(50 to100), P(70 to140), Y(90 to180)
4.80.2
IB
Tstg
15.60.4
9.6
1.8
10max
5.00.2
80
Unit
VCB=120V
VCEO
Conditions
Temp
ICBO
(Case
30C
120
2.0
Unit
VCBO
(Ta=25C)
Ratings
19.90.3
Symbol
4.0
Ratings
Symbol
4.0max
20
Without Heatsink
0
0.02
0.1
0.1
10
50
100
3.5
0
25
50
75
100
125
150
107
2SC4467
Ratings
Unit
ICBO
VCB=160V
10max
VCEO
120
IEBO
VEB=6V
10max
VEBO
V(BR)CEO
IC
hFE
120min
IC=50mA
VCE=4V, IC=3A
50min
19.90.3
Symbol
VCE(sat)
IC=3A, IB=0.3A
1.5max
80(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
200typ
pF
55 to +150
hFE Rank
20.0min
PC
5.450.1
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.4
0.4
0.13typ
3.50typ
0.32typ
0.1 0.2 0.3 0.4
(V C E =4V)
200
Typ
50
100
25C
30C
50
20
0.02
125C
100
0.1
0.5
)
Temp
mp)
(Case
1.0
1.5
0.5
0.3
10
100
1000
Time t(ms)
e Te
0.5
200
P c T a Derating
(V C E =12V)
40
80
20
10
10
40
at
si
nk
Without Heatsink
Natural Cooling
he
0.5
ite
10
60
fin
20
DC
In
Typ
ith
30
100ms
(V C E =4V)
0.5
mp)
4A
2A
0.5 0.6 0.7 0.8 0.9 1.0
0.1
e Te
I C =8A
20
0.02
30C
I B =10mA
Cas
(Cas
20mA
C (
25C
50m A
125
75 m A
(V C E =4V)
1.4
j- a ( C/W)
m
100

a. Part No.
b. Lot No.

0m
20
350m
0.65 +0.2
-0.1
5.450.1
B
RL
()
m
50
2
3
1.05 +0.2
-0.1
VCC
(V)
2.00.1
3.20.1
O(50 to100), P(70 to140), Y(90 to180)
4.80.2
IB
Tstg
15.60.4
9.6
1.8
Conditions
5.00.2
Unit
160
2.0
Ratings
VCBO
Symbol
(Ta=25C)
4.0
4.0max
20
Without Heatsink
0
0.02
0.1
1
108
0.1
5
10
50
100
200
3.5
0
25
50
75
100
125
150
2SC4468
10max
IEBO
VEB=6V
10max
V(BR)CEO
10
hFE
140min
IC=50mA
50min
VCE=4V, IC=3A
VCE(sat)
IC=5A, IB=0.5A
0.5max
100(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
250typ
pF
55 to +150
20.0min
PC
hFE Rank
3.20.1
IB
Tstg
2
3
O(50 to100), P(70 to140), Y(90 to180)
1.05 +0.2
-0.1
5.450.1
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
0.5
0.5
0.24typ
4.32typ
0.40typ
4
20mA
I B =10mA
0
2
I C =10A
0.5
1.0
1.5

(V C E =4V)
200
Typ
100
50
125C
25C
100
30C
50
20
0.02
10
300
0.5
0.1
0.5
10
3
1
0.5
0.1
10
100
1000 2000
Time t(ms)
(V C E =4V)
P c T a Derating
(V C E =12V)
100
30
3m
10
100
200
nk
50
si
10
50
at
he
0.1
3
ite
Without Heatsink
Natural Cooling
fin
10
0.5
In
ith
0.1
0
0.02
ms
10
10
20
DC
0m
Typ
10
30
40
2.0
0.1
5A
20
0.02
(Case
50 mA
25C
75 m A
mp)
e Te
100m
(V C E =4V)
10
Cas
mA
C (
150
125
m
00
1.4
j - a (C /W)
30
A
0m

a. Part No.
b. Lot No.

40
0m
10
0.65 +0.2
-0.1
5.450.1
B
2.00.1
Temp)
IC
VEBO
4.80.2
(Case
140
Temp
VCEO
15.60.4
9.6
30C
1.8
VCB=200V
200
5.00.2
ICBO
VCBO
2.0
Unit
Symbol
(Ta=25C)
Ratings
Unit
4.0
Conditions
Ratings
19.90.3
Symbol
4.0max
3.5
0
Without Heatsink
0
25
50
75
100
125
150
109
2SC4495
High hFE
LOW VCE (sat)
hFE
IB
VCE(sat)
PC
25(Tc=25C)
fT
Tj
150
COB
55 to +150
Tstg
50min
VCE=4V, IC=0.5A
500min
IC=1A, IB=20mA
0.5max
VCE=12V, IE=0.1A
40typ
MHz
VCB=10V,f=1MHz
30typ
pF
1.350.15
1.350.15
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
20
20
10
15
30
0.45typ
1.60typ
0.85typ
2mA
1
1mA
I B =0.5mA
0.5
3A
0.5
10
100
0.5
(V C E =4V)
5000
125C
25C
55C
1000
1000
500
D C Cur r ent Gai n h FE
Typ
500
100
50
20
0.01
0.1
1.5
0.5
7
5
10
100
1000 2000
Time t(ms)
3000
1000
(V C E =4V)
0.5
2A
0.1
1.5
I C =1A
100
0.01
Tem
p)
mp)
3mA
se
5m A
(Ca
2.5
8mA
125
(V CE =4V)
1.5
12m
j- a ( C/W)
A
8m

a. Part No.
b. Lot No.
B C E
2.40.2
2.20.2
RL
()
0m
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
VCC
(V)
3.30.2
a
b
4.00.2
10max
4.20.2
2.8 c0.5
0.80.2
IC
VEB=6V
IC=25mA
10.10.2
0.2
V(BR)CEO
3.9
IEBO
Unit
10max
Temp)
Ratings
VCB=80V
(Case
50
VEBO
Conditions
55C
VCEO
Symbol
e Te
ICBO
(Cas
25C
Unit
80
16.90.3
Ratings
VCBO
Symbol
(Ta=25C)
8.40.2
13.0min
Application : Audio Temperature Compensation and General Purpose
P c T a Derating
(V C E =12V)
30
1m
10
40
20
DC
0m
Typ
10
M aximum Power Dissipa tion P C (W)
10
60
1
0.5
Without Heatsink
Natural Cooling
0.1
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
W
ith
In
150x150x2
1 00x 1 0
10
0x
fin
ite
he
at
si
nk
50x50x2
Without Heatsink
2
0
0.005 0.01
0.05
0.1
110
10
50
100
25
50
75
100
125
150
2SC4511
V(BR)CEO
IC
hFE
VEB=6V
10max
IC=25mA
80min
VCE=4V, IC=2A
50min
10.10.2
VCE(sat)
IC=2A, IB=0.2A
0.5max
PC
30(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
110typ
pF
55 to +150
hFE Rank
Tstg
1.350.15
1.350.15
O(50 to100), P(70 to140), Y(90 to180)
0.3
A
1
m
00
A
80m
5
50 mA
30mA
20mA
I B =10mA
0.34typ
2A
0
0.5
1.0

(V C E =4V)
200
50
100
25C
30C
50
20
0.02
56
Typ
0.1
0.5
56
0.5
0.4
10
100
1000 2000
Time t(ms)
125C
P c T a Derating
(V C E =12V)
30
20
10
10
si
nk
0.1
at
Without Heatsink
Natural Cooling
he
0.5
ite
20
fin
In
10
0m
ith
20
DC
Typ
s
10
30
40
1.5
300
0.5
I C =6A
(V C E =4V)
0.1
4A
30
0.02
(V CE =4V)
100
B C E
C (
15
0m
20
2.60typ
6
0m
0.16typ
0.3

a. Part No.
b. Lot No.
tf
(s)
tstg
(s)
125
ton
(s)
IB2
(A)
Cas
e Te
mp
(Cas
e Tem )
p)
10
IB1
(A)
10
30
VBB2
(V)
VBB1
(V)
IC
(A)
2.40.2
2.20.2
j- a ( C/W)
RL
()
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

VCC
(V)
3.30.2
a
b
13.0min
IB
4.20.2
2.8 c0.5
4.00.2
IEBO
0.80.2
10max
0.2
80
VEBO
Unit
VCB=120V
VCEO
Conditions
Temp
ICBO
(Case
30C
Unit
120
25C
Ratings
VCBO
Symbol
(Ta=25C)
Ratings
3.9
Symbol
8.40.2
16.90.3
10
Without Heatsink
2
0
0.02
0.1
0.05
3
10
50
100
25
50
75
100
125
150
111
2SC4512
Conditions
Ratings
Unit
ICBO
VCB=120V
10max
VCEO
80
IEBO
VEB=6V
10max
VEBO
V(BR)CEO
IC=25mA
80min
IC
hFE
VCE=4V, IC=2A
50min
10.20.2
VCE(sat)
IC=5A, IB=0.2A
0.5max
PC
50(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
110typ
pF
55 to +150
hFE Rank
2.5
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
0.3
0.3
0.16typ
2.60typ
0.34typ
I B =10mA
I C =6A
2A
0
0.5
1.0

(V C E =4V)
300
200
Typ
50
0.5
100
25C
30C
50
20
0.02
56
125C
0.1
0.1
0.5
56
5
0.5
0.4
10
100
1000 2000
Time t(ms)
(V C E =4V)
30
0.02
1.5
4A
100
Temp
20mA
(Case
30mA
30C
50 mA
(V CE =4V)
Cas
e Te
mp
(Cas
e Tem )
p)
A
80m
C (
125
m
00
j - a ( C/W)
15
0m
1.4

a. Part No.
b. Lot No.

20
2.5
B C E
VCC
(V)
0m
1.35
0.65 +0.2
-0.1
O(50 to100), P(70 to140), Y(90 to180)
2.00.1
3.750.2
25C
Tstg
12.0min
IB
4.80.2
3.00.2
Unit
120
16.00.7
Ratings
VCBO
Symbol
(Ta=25C)
8.80.2
Symbol
4.0max
P c T a Derating
(V C E =12V)
20
50
10
100ms
0.1
112
0.05
3
10
50
100
nk
0
0.02
si
0.1
at
Without Heatsink
Natural Cooling
he
0.5
30
ite
10
fin
20
40
In
Typ
DC
ith
30
10
40
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
2SC4517/4517A
ICBO
VCB=800V
100max
VEB=7V
100max
IC=10mA
550min
hFE
VCE=4V, IC=1A
10 to 30
VCEO
550
IEBO
VEBO
V(BR)CEO
3(Pulse6)
IC
2SC4517 2SC4517A
10.10.2
IB
1.5
VCE(sat)
IC=1A, IB=0.2A
0.5max
PC
30(Tc=25C)
VBE(sat)
IC=1A, IB=0.2A
1.2max
Tj
150
fT
VCE=12V, IE=0.25A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
35typ
pF
Tstg
3.9
1.350.15
1.350.15
250
10
0m
300mA
200 mA
150 mA
2
100m A
I B =40mA
4max
0.7max
tf
(s)
0.5max
1.0
V B E (sat)
0.5
0.5
7
5
55C
10
t s tg
V C C 250V
I C :I B 1 :I B2 =1:0.15:0.45
1
tf
0.5
t on
0.1
0.2
0.5
0.5
0.3
P c T a Derating
30
500 1000
100
500
1000
nk
100
2SC4517A
si
50
0.01
50
at
0.05
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
he
0.1
20
ite
1
0.5
2SC4517
1000
fin
Without Heatsink
Natural Cooling
100
In
0.1
10
10
ith
Time t(ms)
0.5
1.0
0.8
50
0.6
10
10
0.01
2
0.4
10
0.2
0.05
25C
Switching Ti me
125C
50
0.5
V C E (sat)
0.1
(V C E =4V)
0.1
0.05
(V CE =4V)
3
I C /I B =5 Const.
5
0.02
1.5
0
0.03 0.05

a. Part No.
b. Lot No.
B C E

40
tstg
(s)
ton
(s)
0.45
0.15
3
IB2
(A)
250
2.40.2
2.20.2
IB1
(A)
VBB2
(V)
VBB1
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
j - a ( C/W)
IC
(A)
RL
()
3.30.2
a
b

VCC
(V)
4.20.2
2.8 c0.5
4.00.2
1000
Unit
0.80.2
900
Conditions
0.2
2SC4517 2SC4517A
VCBO
Ratings
Symbol
Unit
8.40.2
Ratings
(Ta=25C)
16.90.3
Symbol
(Ta=25C)
13.0min
10
Without Heatsink
2
0
25
50
75
100
125
150
113
2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
Conditions
ICBO
VCB=800V
100max
VCEO
550
IEBO
VEBO
V(BR)CEO
5(Pulse10)
hFE
IC
2SC4518 2SC4518A
VEB=7V
100max
IC=10mA
550min
VCE=4V, IC=1.8A
10 to 25
2.5
VCE(sat)
IC=1.8A, IB=0.36A
0.5max
PC
35(Tc=25C)
VBE(sat)
IC=1.8A, IB=0.36A
1.2max
Tj
150
fT
VCE=12V, IE=0.35A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
50typ
pF
3.9
1.350.15
1.350.15
IB1
(A)
10
1.8
0
70
600mA
mA
400 mA
250 mA
3
150 mA
2
I B =50mA
0.7max
0.9
0.5max
4max
1.0
V B E (sat)
0.5
0.5
10
1
tf
0.5
t on
0.1
0.2
0.5
1.0
1.2
0.5
0.3
10
100
1000
Time t(ms)
P c T a Derating
35
nk
si
1000
at
500
10
Without Heatsink
0.05
0.03
50
20
he
0.1
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
ite
Without Heatsink
Natural Cooling
0.5
fin
0.5
In
30
ith
100
0.8
10
50
0.6
20
0
0.4
20
10
0.2
114
t s tg
V C C 250V
I C :I B 1 :I B 2 =1:0.15:0.5
10
55C
0.05
0.03
10
10
7
5
25C
Swi tchi ng T im e
125C
0.1
V C E (sat)
0.1
50
0.5
(V C E =4V)
0.1
(V CE =4V)
0.05
I C /I B =5 Const.
5
0.02
B C E
1.5
0
0.03 0.05

a. Part No.
b. Lot No.
tf
(s)
tstg
(s)

ton
(s)
IB2
(A)
0.27
2.40.2
2.20.2
139
250
VBB2
(V)
VBB1
(V)
IC
(A)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
j - a (C /W)
RL
()
3.30.2
a
b

VCC
(V)
4.20.2
2.8 c0.5
4.00.2
10.10.2
IB
Tstg
Unit
0.80.2
1000
Ratings
Symbol
Unit
0.2
900
(Ta=25C)
8.40.2
VCBO
16.90.3
Ratings
Symbol
2SC4518 2SC4518A
13.0min
2SC4518
100
500
2SC4518A
1000
2
0
25
50
75
100
125
150
2SC4546
Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
7(Pulse14)
IB
400min
hFE
VCE=4V, IC=3A
10 to 25
VCE(sat)
IC=3A, IB=0.6A
0.7max
IC=3A, IB=0.6A
1.3max
16.90.3
100max
30(Tc=25C)
VBE(sat)
Tj
150
fT
VCE=12V, IE=0.5A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
55typ
pF
3.9
PC
Tstg
200m A
2
I B =50m A
I C / I B =5 Const.
6
0.5
125C (Case Temp)
25C (Case Temp)
0
0.02
0.05
0.1
0.5
10
t s tg
1
0.5
tf
t on
0.1
0.05
V C C 200V
I C :I B1 :I B 2 =5:1:2
0.02
0.2
0.5
0.5
0.3
10
P c T a Derating
ite
he
at
si
nk
fin
Without Heatsink
Natural Cooling
L=3mH
IB2=0.5A
Duty:less than 1%
20
In
Without Heatsink
Natural Cooling
ith
10
0.5
1000
30
100
Time t(ms)
0.5
20
20
1.0
10
0.5
10
Sw it ching Time
25C
30C
0.5
10

2
125C
0.1
(V C E =4V)
0.05
5
0.02
30C (Case Temp)
50
(V C E =4V)
1.0
p)
Tem
300 mA
0.15max
se
40 0m A
2max
0.5max
(Ca
60 0m A
6
800mA
1A
2.40.2

a. Part No.
b. Lot No.
B C E
V CE ( sat ) I C Characteristics (Typical)
7
1.2
0.6
tf
(s)
10
tstg
(s)
ton
(s)
125
67
IB2
(A)
IB1
(A)
200
VBB2
(V)
VBB1
(V)
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.20.2
j- a ( C/W)
IC
(A)
RL
()
1.350.15
2.54

VCC
(V)
3.30.2
a
b
IC
VEB=7V
IC=25mA
Temp
V(BR)CEO
4.20.2
2.8 c0.5
(Case
IEBO
10.10.2
4.00.2
0.80.2
400
VEBO
100max
30C
VCEO
VCB=600V
mp)
ICBO
e Te
Unit
(Cas
600
Ratings
25C
VCBO
(Ta=25C)
Conditions
0.2
Symbol
Unit
8.40.2
Ratings
Symbol
13.0min
10
Without Heatsink
2
0.1
10
50
100
500 700
0.1
10
50
100
500 700
25
50
75
100
125
150
115
2SC4557
Unit
VCB=800V
100max
VCEO
550
IEBO
VEB=7V
100max
V(BR)CEO
IC=10mA
550min
10(Pulse20)
hFE
VCE=4V, IC=5A
10 to 28
VCE(sat)
IC=5A, IB=1A
0.5max
80(Tc=25C)
VBE(sat)
IC=5A, IB=1A
1.2max
Tj
150
fT
VCE=12V, IE=1A
6typ
MHz
COB
VCB=10V, f=1MHz
105typ
3.3
1.75
1.05 +0.2
-0.1
5.450.1
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
50
10
0.75
1.5
1max
5max
0.5max
ase
125C (C
V C E (sat)
0.05
0.1
0.5
Te m
5
5
10
10
0.1
0.5
10
t s tg
5
V C C 250V
I C :I B1 :I B2 =10:1.5:3
1
0.5
t on
tf
0.1
0.2
0.5
20
10
0.5
0.1
10
P c T a Derating
he
40
at
si
nk
ite
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
60
fin
1000
In
0.5
100
ith
Without Heatsink
Natural Cooling
1.2
80
10
1.0
Time t(ms)
0.8
0.6
20
10
0.4
10
0.2
0.5
5 5 C
Sw it ching Time
25 C
0.05
10
125 C
Temp)
5C
(V C E =4V)
50
p)
5
0.02
p)
25C
0
0.02
(Case
I B =100mA
55C (Case Temp)

Temp)
25C (Case
p)
ase Tem
125C (C
em
200mA
V B E (sat)
eT
400m A
(V CE =4V)
10
Cas
600 mA
C (
80 0m A
8

a. Part No.
b. Lot No.
125
1A
3.35
1.5
(I C /I B =5)
j- a ( C/W)
1.2

10
4.4
0.65 +0.2
-0.1
5.450.1
1.5
0.8
2.15
55C
55 to +150
pF
Temp
Tstg
3.0
PC
3.45 0.2
3.30.2
a
b
IB
5.50.2
(Case
IC
15.60.2
25C
VEBO
0.80.2
Ratings
ICBO
5.5
Conditions
1.6
Unit
900
23.00.3
Ratings
VCBO
Symbol
(Ta=25C)
9.50.2
Symbol
16.2
20
Without Heatsink
0.1
10
50
100
500
116
1000
0.1
10
50
100
500
1000
3.5
0
25
50
75
100
125
150
2SC4662
IEBO
VEB=10V
100max
V(BR)CEO
IC=25mA
400min
hFE
VCE=4V, IC=1.5A
10 to 30
IB
VCE(sat)
IC=1.5A, IB=0.3A
0.5max
PC
30(Tc=25C)
VBE(sat)
IC=1.5A, IB=0.3A
1.3max
Tj
150
fT
VCE=12V, IE=0.3A
20typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
30typ
pF
3.9
0.3
0.15
tf
(s)
2.5max
1max
0.5max
(I C /I B =5)
(V C E =4V)
5
mp)
p)
ase Tem
125C (C
C
125
V C E (sat)
0
0.01
0.05
p)
em
Temp)
Te
25C (Case
0.1
0.5
(C
as
C (
55C (Case
eT
V B E (sat)
Cas
55C

25C
0.2
55C
10
5
0.01
0.05
0.1
0.5
j - a ( C/W)
V C C 200V
I C :I B 1 :I B2 =10:1:2
t s tg
1
0.5
t on
tf
0.1
0.1
0.5
0.5
0.4
10
10
ite
he
at
si
nk
fin
Without Heatsink
Natural Cooling
L=3mH
IB2=0.5A
Duty:less than 1%
20
In
0.5
1000
ith
Without Heatsink
Natural Cooling
100
P c T a Derating
0.5
1.4
30
10
10
1. 2
Time t(ms)
20
20
1.0
0.8
25C
Sw it ching Time
125C
0.6
(V C E =4V)
50
0.4

a. Part No.
b. Lot No.
B C E
125
10
tstg
(s)
ton
(s)
mp
1.5
133
IB2
(A)
IB1
(A)
Te
200
VBB2
(V)
VBB1
(V)
2.40.2
2.20.2
IC
(A)
RL
()
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

VCC
(V)
1.350.15
Tstg
3.30.2
a
b
Temp
(Case
5(Pulse10)
IC
mp)
55C
10
e Te
400
VEBO
4.20.2
2.8 c0.5
(Cas
VCEO
10.10.2
25C
ICBO
4.00.2
100max
0.80.2
VCB=500V
500
0.2
Unit
16.90.3
Ratings
VCBO
(Ta=25C)
Conditions
Symbol
Unit
8.40.2
Ratings
Symbol
13.0min
10
Without Heatsink
2
0.1
10
50
100
500
0.1
5
10
50
100
500
25
50
75
100
125
150
117
2SC4706
100max
VCEO
600
IEBO
VEB=7V
100max
V(BR)CEO
IC=10mA
600min
14(Pulse28)
hFE
VCE=4V, IC=7A
10 to 25
IB
VCE(sat)
IC=7A, IB=1.4A
0.5max
PC
130(Tc=25C)
VBE(sat)
IC=7A, IB=1.4A
1.2max
Tj
150
fT
VCE=12V, IE=1.5A
6typ
MHz
55to+150
COB
VCB=10V, f=1MHz
160typ
pF
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
35.7
10
1.05
3.5
1max
5max
0.7max
I B =100mA
2
Temp
V C E (sat)
0.05 0.1
0.5
10
0.2
0.4
0.6
0.8
1.0
1.2
0
0.02
(Case
200mA
V B E (sat)
55C
mp)
400m A
emp
10
eT
600mA
12
Cas
10
I C /I B =5 Const.
C (
800mA
(V CE =4V)
14
125
12
1.4
1.2 A

a. Part No.
b. Lot No.

0.65 +0.2
-0.1
5.450.1
B
IC
(A)
6
1.
5.450.1
RL
()
14
2
3
1.05 +0.2
-0.1
3.20.1
VCC
(V)
2.00.1
e Te
Tstg
4.80.2
(Cas
IC
25C
VEBO
15.60.4
9.6
1.8
Unit
VCB=800V
5.00.2
Ratings
ICBO
2.0
Conditions
4.0
Unit
900
19.90.3
Ratings
VCBO
Symbol
(Ta=25C)
4.0max
Symbol
20.0min
(V C E =4V)
8
50
25C
Sw it ching Time
55C
10
5
0.02
0.05
0.1
0.5
10 14
5
V C C 250V
I C :I B1 :I B2 =10:1.5:5
1
t on
0.5
tf
0.1
0.2
0.5
10
14
P c T a Derating
130
500
1000
nk
100
si
0.1
50
at
1000
he
500
ite
100
fin
50
0.5
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
In
Without Heatsink
Natural Cooling
ith
100
10
10
10
50
50
118
0.1
10
1
0.5
t s tg
125C
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SC4883/4883A
Application : Audio Output Driver and TV Velocity-modulation
(Ta=25C)
IC
V(BR)CEO
180min
150min
IC=10mA
IB
hFE
VCE=10V, IC=0.7A
PC
20(Tc=25C)
VCE(sat)
IC=0.7A, IB=70mA
1.0max
Tj
150
fT
VCE=12V, IE=0.7A
120typ
55 to +150
COB
VCB=10V, f=1MHz
30typ
Tstg
10max
VEB=6V
60 to 240
V
MHz
pF
1.350.15
1.350.15
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
20
20
10
100
100
0.5typ
1.5typ
0.5typ
I B =5mA
10
50
100
500
(V C E =4V)
100
125C
300
Typ
25C
100
55C
50
50
0.5
30
0.01
0.05
1.0
0.1
0.5
7
5
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
20
10
50
100
2
200
nk
si
10
at
he
0.01
0.1
ite
20
fin
Without Heatsink
Natural Cooling
1.2SC4883
2.2SC4883A
0.5
In
0.1
ith
0.5
40
60
80
0m
100
ms
10
Typ
120
0
0.01
1m
10
140
160
0.5
300
0.1
(V C E =4V)
0.05
1000
40
0.01
I C =2A
1A
0.5A
0
10
1
emp
eT
Cas
10m
C (
125
15m
(V C E =4V)
j- a ( C/W)
30m

a. Part No.
b. Lot No.
B C E
60mA
2.40.2
2.20.2
VCC
(V)
100mA
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
3.30.2
a
b
Temp)
IEBO
(Case
55C
180
150
VCB=
VEBO
4.00.2
ICBO
0.80.2
0.2
180
4.20.2
2.8 c0.5
mp)
150
3.9
VCEO
10.10.2
10max
e Te
(Cas
180
Unit
25C
150
Ratings
2SC4883 2SC4883A
Conditions
8.40.2
VCBO
Symbol
16.90.3
2SC4883 2SC4883A
Unit
13.0min
Ratings
Symbol
2
0
Without Heatsink
0
25
50
75
100
125
150
119
2SC4886
hFE
150min
VCE=4V, IC=5A
50min
VCE(sat)
IC=5A, IB=500mA
2.0max
PC
80(Tc=25C)
fT
VCE=12V, IE=2A
60typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
200typ
pF
hFE Rank
55 to +150
16.2
1.05 +0.2
-0.1
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
0.5
0.5
0.26typ
1.5typ
0.35typ
I B =20mA
0.2
0.4
0.6
0.8
(V C E =4V)
200
Typ
50
100
25C
30C
50
20
0.02
10 14
0.1
0.5
0.5
0.1
10
80
1m
Typ
10
10
5
40
at
si
nk
Without Heatsink
Natural Cooling
he
0.5
ite
60
fin
In
20
ith
40
DC
10
0m
60
20
0.1
0
0.02
0.1
120
10
0.05
2
1000 2000
P c T a Derating
40
80
100
Time t(ms)
(V C E =12V)
10 14
125C
200
0.5
(V C E =4V)
0.1
1.0
20
0.02
p)
I C =10A
5A
100
em
eT
50m A
10
as
10 0m A
(C
5C
150m
(V C E =4V)
12
j - a ( C/W)
200m
10

a. Part No.
b. Lot No.
14
A
300m
3.35
1.5
A
0m
75
400m
4.4
0.65 +0.2
-0.1
5.450.1
1.5
RL
()
0.8
2.15
5.450.1
VCC
(V)
A
0m
60 0mA
50
1.75
O(50 to 100), P(70 to 140), Y(90 to 180)
14
3.30.2
a
b
3.0
IB
Tstg
0.80.2
14
100max
3.45 0.2
5.5
IC
VEB=5V
IC=25mA
5.50.2
1.6
V(BR)CEO
15.60.2
p)
IEBO
Tem
Unit
100max
se
150
VEBO
Ratings
VCB=150V
(Ca
VCEO
Conditions
ICBO
30
Unit
150
3.3
Symbol
Ratings
VCBO
(Ta=25C)
25
Symbol
23.00.3
9.50.2
LAPT
Without Heatsink
5
10
50
100
200
150
3.5
0
25
50
75
100
125
150
2SC4907
mA
VEB=10V
100max
IC=25mA
500min
VCEO
500
IEBO
VEBO
10
V(BR)CEO
6(Pulse12)
hFE
VCE=4V, IC=2A
10to30
IB
VCE(sat)
IC=2A, IB=0.4A
0.5max
PC
30(Tc=25C)
VBE(sat)
IC=2A, IB=0.4A
1.3max
Tj
150
fT
VCE=12V, IE=0.5A
8typ
MHz
COB
VCB=10V, f=1MHz
45typ
pF
3.9
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
100
10
0.2
0.4
1max
4.5max
0.5max
(C
125C
V C E (sat)
0
0.02
0.05 0.1
0.5
ase
Te
10
5 6
1
0.5
t on
tf
0.1
0.2
0.5
0.4
0.3
mp)
e Te
(Cas
10
100
1000
P c T a Derating
he
at
si
nk
ite
Without Heatsink
Natural Cooling
L=3mH
IB2=0.5A
Duty:less than 1%
20
fin
0.5
In
0.5
emp
ith
Without Heatsink
Natural Cooling
1.4
30
1.2
1.0
Time t(ms)
10
0.8
20
0.6
10
0.2
20
t s tg
V C C 200V
I C :I B 1 :I B2 =10:1:2
0.5
55C
10
7
5
25C
Sw it ching Time
125C
0.5
50
0.1
Te
(V C E =4V)
0.05
mp
5
0.02
55C
25C
se
I B =100mA
p)
55C (Case Tem
Temp)
25C (Case
Temp)
(Case
125C
(Ca
200mA
j - a ( C/W)
V B E (sat)
125
300m A
5
400m A
(V C E =4V)
p)

600m A
(I C /I B =5)

a. Part No.
b. Lot No.
B C E
80 0m A
1A
2.40.2
2.20.2
VCC
(V)
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
1.350.15
se T
55 to +150
(Ca
Tstg
4.20.2
2.8 c0.5
3.30.2
a
b
25C
IC
10.10.2
4.00.2
Unit
1max
ICBO
0.80.2
Ratings
VCB=600V
0.2
Conditions
Unit
600
16.90.3
Symbol
Ratings
VCBO
Symbol
(Ta=25C)
8.40.2
13.0min
10
Without Heatsink
2
0.1
10
50
100
500
1000
0.1
10
50
100
500
1000
25
50
75
100
125
150
121
2SC4908
VCEO
800
IEBO
VEBO
V(BR)CEO
3(Pulse6)
hFE
IC
Symbol
Conditions
Ratings
Unit
VCB=800V
100max
VEB=7V
100max
IC=10mA
800min
VCE=4V, IC=0.7A
10 to 30
10.10.2
IB
1.5
VCE(sat)
IC=0.7A, IB=0.14A
0.5max
PC
35(Tc=25C)
VBE(sat)
IC=0.7A, IB=0.14A
1.2max
Tj
150
fT
VCE=12V, IE=0.3A
6typ
MHz
COB
VCB=10V, f=1MHz
40typ
pF
Tstg
55 to +150
IC
(A)
RL
()
250
0.7
357
VBB2
(V)
VBB1
(V)
3.9
1.350.15
1.350.15
2.40.2
2.20.2
IB2
(A)
tstg
(s)
ton
(s)
0.35
0.1
5max
1max
tf
(s)

a. Part No.
b. Lot No.
B C E
1max
0.1
0.5
30C
10
0.5
t s tg
V C C 250V
I C :I B 1 :I B2 =2:0.3:1
1
tf
0.5
t on
0.2
0.1
0.5
0.3
10
p)
ase Tem
1000
fin
ite
20
he
at
si
nk
In
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
ith
30
0.5
100
P c T a Derating
Without Heatsink
Natural Cooling
1.2
Time t(ms)
0.5
mp)
mp)
35
1.0
0.5
10
0.8
10
0.6
10
0.4
25C
Swi tchi ng T im e
125C
0.1
0.2
50
0.05
(V C E =4V)
2
0.02
e Te
ase Te
V C E (sat)
0
0.03 0.05
30C (C
I B =20mA
V B E (sat)
(Cas
60mA
25C (C
140mA
125C
200m A
I C /I B =5 Const,
j - a (C /W)
300m A
(V C E =4V)
400 mA
50

0m
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
IB1
(A)
10
3.30.2
a
b

VCC
(V)
4.20.2
2.8 c0.5
4.00.2
ICBO
0.80.2
0.2
900
16.90.3
Unit
VCBO
(Ta=25C)
13.0min
Ratings
8.40.2

Symbol
10
Without Heatsink
0.1
50
100
500
122
1000
0.1
50
100
500
1000
2
0
25
50
75
100
125
150
2SC5002
7(Pulse14)
IB
3.5
PC
80(Tc=25C)
Tj
150
55 to +150
Tstg
0.80.2
5.5
3.30.2
a
b
3.0
IC
V
V
MHz
pF
1.75
1.05 +0.2
-0.1
700 mA
400 mA
3
200m A
2
I B =100 mA
(I C : I B = 5 :1)
0
0.02
0.1
0.5
20
3 0 C
0.1
0.5
10
.
V C C =200V
.
I C : I B 1 : I B 2 =5 :1: 2
t stg
t s t g t f ( s)
25 C
Swi tchi ng T im e
125C
0.05
tf
1
0.5
0.1
0.2
0.5
0.5
0.5
0.1
10
1000 2000
P c T a Derating
20
20
100
Time t(ms)
1.5
1.0
t stg t f I C Characteristics (Typical)
100
2
0.02
10
(V C E =5V)
10
50
(V CE =5V)
mp)
e Te
1. 2A
125C
1.5
0.2max
VCE(sat)IC Characteristics (Typical)
7
4.0max
1.6
0.8

a. Part No.
b. Lot No.
tf
(s)
B
3.35
1.5
(Cas
10
4.4
25C (C
50
tstg
(s)
IB2
(A)
IB1
(A)
200
VBB2
(V)
VBB1
(V)
0.65 +0.2
-0.1
5.450.1
1.5
j- a ( C/W)
IC
(A)
RL
()
0.8
2.15
5.450.1
VCC
(V)
3.45 0.2
1.6
VEBO
5.50.2
3.3
15.60.2
Temp)
800
100max
1max
100max
800min
8min
4 to 9
5max
1.5max
4typ
100typ
(Case
VCEO
ICBO1
ICBO2
IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
COB
Unit
A
mA
A
V
30C
(Ta=25C)
Ratings
Conditions
VCB=1200V
VCB=1500V
VEB=6V
IC=10mA
VCE=5V, IC=1A
VCE=5V, IC=5A
IC=5A, IB=1.2A
IC=5A, IB=1.2A
VCE=12V, IE=0.5A
VCB=10V, f=1MHz
mp)
1500
Symbol
ase Te
VCBO
9.50.2
Unit
23.00.3
Ratings
Symbol
16.2
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
80
100s
40
at
si
nk
he
ite
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
fin
0.5
In
60
ith
Without Heatsink
Natural Cooling
10
10
20
Without Heatsink
1
100
500
1000
0.1
50
100
500
1000
2000
3.5
0
50
100
150
123
2SC5003
7(Pulse14)
IB
3.5
PC
80(Tc=25C)
150
55 to +150
Tj
Tstg
V
V
V
MHz
pF
0.80.2
3.30.2
a
b
3.0
IC
VEBO
1.75
1.05 +0.2
-0.1

IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
tstg
(s)
tf
(s)
200
50
10
0.8
1.6
4.0max
0.2max
300mA
2
I B =100mA
0.2
0.5
10
20
t s t g t f ( s)
C
0C
2
0.02
0.05
0.1
0.5
.
V C C =200V
.
I C : I B 1 : I B 2 =5 :1: 2
10
Swit ching Time
5C
0.5
t stg
tf
1
0.5
0.1
0.2
0.5
0.5
0.1
10
1000 2000
P c T a Derating
20
20
100
Time t(ms)
1.5
1.0
50
10
(V C E =5V)
25
12
4
mp)
e Te
ase Te
600 mA
(I C : I B = 5 :1)
(Cas
(V CE =5V)
125C
900 mA
25C (C

a. Part No.
b. Lot No.
1. 4A
3.35
1.5
j - a ( C/W)
1.7
4.4
7
0.65 +0.2
-0.1
5.450.1
1.5
RL
()
0.8
2.15
5.450.1
VCC
(V)
3.45 0.2
5.5
5.50.2
1.6
800
15.60.2
3.3
VCEO
ICBO1
ICBO2
ICEO
VEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VFEC
fT
COB
Unit
A
mA
mA
V
Temp)
Ratings
100max
1max
1max
6min
8min
4 to 9
5max
1.5max
2.0max
4typ
100typ
(Case
1500
(Ta=25C)
Conditions
VCB=1200V
VCB=1500V
VCE=800V
IEB=300mA
VCE=5V, IC=1A
VCE=5V, IC=5A
IC=5A, IB=1.2A
IC=5A, IB=1.2A
IEC=7A
VCE=12V, IE=0.5A
VCB=10V, f=1MHz
Symbol
30C
VCBO
mp)
Unit
23.00.3
Ratings
Symbol
( 50 )
9.50.2
16.2
Built-in Damper Diode

Equivalent
circuit
80
100s
2000
nk
1000
si
500
40
at
100
he
124
0.1
50
ite
1000
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
fin
500
0.5
In
1
100
60
ith
Without Heatsink
Natural Cooling
10
10
20
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SC5071
100max
IEBO
VEB=10V
100max
A
V
VCEO
400
10
V(BR)CEO
IC=25mA
400min
12(Pulse24)
hFE
VCE=4V, IC=7A
10 to 30
IB
VCE(sat)
IC=7A, IB=1.4A
0.5max
PC
100(Tc=25C)
VBE(sat)
IC=7A, IB=1.4A
1.3max
Tj
150
fT
VCE=12V, IE=1A
10typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
105typ
pF
Tstg
19.90.3
IC
VEBO
15.60.4
9.6
200
RL
()
VBB1
(V)
28.5
10
2
3
1.05 +0.2
-0.1
5.450.1
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
0.7
1.4
1.0max
3.0max
0.5max
2.00.1
3.20.1
0.65 +0.2
-0.1
5.450.1
B
IC
(A)
4.80.2

VCC
(V)
1.8
VCB=500V
5.00.2
ICBO
500
2.0
Unit
VCBO
(Ta=25C)
4.0
Symbol
Ratings
Unit
4.0max
Conditions
Ratings
Symbol
20.0min
1.4

a. Part No.
b. Lot No.
(I C /I B =5)
12
0.5

5
125C
Swi tchi ng T im e
25C
30C
10
1
10 12
1
0.5
tf
t on
0.1
0.5
10 12
10
e Te
(Cas
100
1000
P c T a Derating
100
nk
500
si
100
50
at
50
he
10
ite
0.1
5
Without Heatsink
Natural Cooling
L=3mH
I B2 =1.0A
Dut y:less than 1%
fin
500
0.5
In
Without Heatsink
Natural Cooling
ith
mp)
)
mp
0.3
Time t(ms)
10
100
emp
0.5
10
50
se T
10
10
Te
30
30
1.0
0.1
5
0.5
0.5
t s tg
V C C 200V
I C :I B1 :I B2 =10:1:2
t on t s tg t f ( s)
40
0.5
(V C E =4V)
0.1
10
0.05
0.05 0.1
8
0.02
V C E (sat)
0
0.02
(C
se
125C
55C
emp
ase T
(Ca
I B =100mA
e Temp)
25C (Cas
(Ca
200mA
Temp)
25C
55C (Case
5C
400m A
12
10
V B E (sat)
j - a ( C/W)
60 0m A
80 0m A
10
(V CE =4V)
12
as
e
25 Temp
)
C
1A
(C

12
3.5
0
Without Heatsink
0
25
50
75
100
125
150
125
2SC5099
IEBO
VEB=6V
10max
V(BR)CEO
IC=50mA
80min
hFE
VCE=4V, IC=2A
50min
IB
VCE(sat)
IC=2A, IB=0.2A
0.5max
PC
60(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
110typ
pF
55 to +150
hFE Rank
O(50 to 100), P(70 to 140), Y(90 to 180)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
0.3
0.3
0.16typ
2.60typ
0.34typ
I B =10mA
I C =6A
4A
0
0.5
1.0

(V C E =4V)
300
200
Typ
50
100
25C
30C
50
20
0.02
56
0.1
0.5
56
5
0.5
0.3
10
100
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
20
60
10
si
nk
Without Heatsink
Natural Cooling
at
0.5
he
40
ite
DC
fin
10
ms
In
20
0m
1m
ith
Typ
10
30
10
40
125C
0.5
(V C E =4V)
0.1
1.5
30
0.02
2A
100
e Te
mp
e Tem )
p)
20mA
Cas
30mA
C (
50 mA

a. Part No.
b. Lot No.
(V CE =4V)
125
3.35
1.5
10
0mA
j- a ( C/W)
15
A
0m
4.4
0m
0.65 +0.2
-0.1
5.450.1

20
0m
0.8
2.15
1.5
RL
()
1.75
1.05 +0.2
-0.1
VCC
(V)
3.45 0.2
3.30.2
a
b
5.450.1
5.50.2
3.0
23.00.3
15.60.2
16.2
Tstg
0.80.2
5.5
IC
10max
1.6
VEBO
VCB=120V
3.3
80
ICBO
VCEO
Unit
Temp
Ratings
(Case
120
(Ta=25C)
Conditions
30C
VCBO
Symbol
(Cas
Unit
25C
Ratings
9.50.2

Symbol
20
Without Heatsink
0
0.02
0.1
0.1
126
10
50
100
3.5
0
25
50
75
100
125
150
2SC5100
hFE
IB
VCE(sat)
PC
75(Tc=25C)
fT
150
COB
hFE Rank
Tj
Tstg
55 to +150
120min
IC=50mA
VCE=4V, IC=3A
50min
IC=3A, IB=0.3A
0.5max
VCE=12V, IE=0.5A
20typ
MHz
VCB=10V, f=1MHz
200typ
pF
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
0.4
0.4
0.13typ
3.50typ
0.32typ
I B =10mA
0.2
0.4
2A
0.6
0.8
1.0
0.5
(V C E =4V)
200
Typ
50
100
25C
30C
50
20
0.02
125C
100
0.1
0.5
1.5
0.5
0.2
10
100
1000 2000
Time t(ms)
1.0
200
P c T a Derating
(V C E =12V)
80
20
40
10
he
at
40
si
nk
ite
Without Heatsink
Natural Cooling
fin
0.5
In
60
ith
10
20
0m
DC
Typ
10
30
10
(V C E =4V)
0.5
mp)
4A
0.1
I C =8A
20
0.02
4
e Te
20mA
2
Cas
C (
50m A
(V C E =4V)
125

a. Part No.
b. Lot No.
75 m A
3.35
1.5
j- a ( C/W)
A
00m
4.4
0m
20
350m
15
0.65 +0.2
-0.1
5.450.1
1.5
IC
(A)
0.8
2.15
1.05 +0.2
-0.1
RL
()
1.75
5.450.1
VCC
(V)
0m
3.30.2
a
b
O(50 to 100), P(70 to 140), Y(90 to 180)
3.45 0.2
3.0
V(BR)CEO
0.80.2
5.5
IC
10max
5.50.2
1.6
VEBO
VEB=6V
15.60.2
IEBO
Temp
10max
(Case
120
VCB=160V
30C
VCEO
Conditions
mp)
ICBO
e Te
(Cas
160
Unit
25C
Unit
VCBO
(Ta=25C)
Ratings
3.3
Symbol
9.50.2
Ratings
23.00.3
Symbol
16.2
20
Without Heatsink
0
0.02
0.1
1
0.1
5
10
50
100
150
3.5
0
25
50
75
100
125
150
127
2SC5101
Ratings
Unit
ICBO
VCB=200V
10max
VCEO
140
IEBO
VEB=6V
10max
A
V
140min
IC=50mA
VCE=4V, IC=3A
50min
IB
VCE(sat)
IC=5A, IB=0.5A
0.5max
PC
80(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
250typ
55 to +150
hFE Rank
pF
1.75
16.2
Tstg
3.30.2
a
b
3.0
hFE
3.3
V(BR)CEO
O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1
5.450.1
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
60
12
10
0.5
0.5
0.24typ
4.32typ
0.40typ
4
20mA
10mA
0
2
I C =10A
0.5
1.0
1.5

(V C E =4V)
200
Typ
100
50
125C
25C
100
30C
50
20
0.02
10
300
0.5
0.1
0.5
10
3
1
0.5
0.1
10
100
1000 2000
Time t(ms)
Base-Emitter Voltage V B E (V)
(V C E =4V)
2.0
0.1
5A
20
0.02
e Te
mp)
Temp
)
50 mA
(Case
75 m A
25C
(V CE =4V)
Cas
100m

a. Part No.
b. Lot No.
10
C (
mA
125
150
3.35
1.5
j - a ( C/W)
m
00
8
30
A
0m
IB
=4
00
10
4.4
0.65 +0.2
-0.1
5.450.1
1.5
0.8
2.15
Temp)
10
3.45 0.2
(Case
IC
5.50.2
30C
VEBO
15.60.2
23.00.3
Symbol
0.80.2
Conditions
5.5
Unit
200
1.6
Ratings
VCBO
Symbol
(Ta=25C)
9.50.2
P c T a Derating
(V C E =12V)
80
si
nk
40
at
Without Heatsink
Natural Cooling
he
0.5
ite
60
fin
In
ith
10
ms
s
0m
20
10
Typ
10
10
30
30
40
20
Without Heatsink
0
0.02
0.1
1
128
10
0.1
3
10
50
100
200
3.5
0
25
50
75
100
125
150
2SC5124
IC
10(Pulse20)
IB
PC
100(Tc=25C)
Tj
150
55 to +150
Tstg
V
V
MHz
pF
0.80.2
1.75
1.05 +0.2
-0.1
1.5
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
33.3
10
1.2
2.4
0.1typ
4.0typ
0.2typ
1. 8A
1. 2A
700 mA
300 mA
I B =100mA
0.65 +0.2
-0.1
5.450.1
4.4
3.35
1.5

a. Part No.
b. Lot No.

(V C E =5V)
10
I C / I B =5:1
2.4
10
0.8
2.15

RL
()
3.45 0.2
3.30.2
a
b
5.450.1
VCC
(V)
5.50.2
3.0
VEBO
15.60.2
5.5
Unit
A
mA
A
V
100max
1max
100max
800min
8min
4 to 9
5max
1.5max
3typ
130typ
1.6
800
Ratings
Conditions
VCB=1200V
VCB=1500V
VEB=6V
IC=10mA
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=8A, IB=2A
IC=8A, IB=2A
VCE=12V, IE=1A
VCB=10V, f=1MHz
3.3
VCEO
Symbol
ICBO1
ICBO2
IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
COB
9.50.2
23.00.3
Unit
1500
(Ta=25C)
19.1
16.2
Ratings
VCBO
Symbol
0
0.02
0.05
0.1
0.5
10
0.5
1.0
(V C E =5V)
10
125C
25C
Switching Ti me
40
55C
10
5
3
0.02
0.1
0.5
10
t s tg
5
V C C 200V
I C :I B 1 :I B 2 =5:1:2
1
0.5
tf
0.1
0.2
0.5
10

30
30
100
10
500
1000
0.1
50
100
500
1000
2000
nk
100
si
50
50
at
10
he
Without Heatsink
Natural Cooling
L=3mH
IB2=1A
Duty:less than 1%
ite
0.1
0.5
fin
0.5
In
ith
10
10
P c T a Derating
3.5
0
Without Heatsink
0
25
50
75
100
125
150
129
2SC5130
Ratings
Unit
VCB=500V
100max
VEB=10V
10max
IC=25mA
400min
ICBO
VCEO
400
IEBO
VEBO
10
V(BR)CEO
5(Pulse10)
hFE
VCE=4V, IC=1.5A
10 to 30
10.10.2
VCE(sat)
IC=1.5A, IB=0.3A
0.5max
30(Tc=25C)
VBE(sat)
IC=1.5A, IB=0.3A
1.3max
Tj
150
fT
VCE=12V, IE=0.3A
20typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
30typ
pF
Tstg
3.9
PC
3.30.2
a
b
IB
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
133
1.5
10
0.15
0.3
1max
2max
0.3max
0.05 0.1
0.5
10
t s tg
55C
Swi tchi ng T im e
0.5
t on
tf
V C C 200V
I C :I B 1 :I B2 =10:1:2
0.1
0.1
0.5
0.5
0.4
50
(Case
Temp
mp)
100
1000
P c T a Derating
ite
he
at
si
nk
Without Heatsink
Natural Cooling
L=3mH
IB2=0.5A
Duty:less than 1%
20
fin
Without Heatsink
Natural Cooling
1
0.5
e Te
10
In
1
0.5
ith
1.4
30
10
1.2
10
1.0
Time t(ms)
20
20
0.8
0.6
10
0.4
Maximu m Power Dissi pation P C ( W)
25C
0.5
0.2
125C
0.1
(V C E =4V)
0.05
p)
55C (Case Temp)
0
0.01
5
0.01
em
50
eT
25C (Case Temp)
j - a ( C/W)
55C
I B =50mA
125C (Case Temp)
0.5
Cas
1.0
(Cas
15 0m A
C (
30 0m A
I C / I B =5 Const.
25C
50 0m A
1.5
125
mA
4
800

a. Part No.
b. Lot No.
B C E
(V C E =4V)
2.40.2
2.20.2
VCC
(V)
4.20.2
2.8 c0.5
4.00.2
0.80.2
Unit
600
0.2
Conditions
Ratings
VCBO
IC
8.40.2
Symbol
(Ta=25C)
16.90.3
Symbol
13.0min
10
Without Heatsink
2
0.1
5
10
50
100
130
500
0.1
5
10
50
100
500
25
50
75
100
125
150
2SC5239
Ratings
Unit
ICBO
VCB=800V
100max
VCEO
550
IEBO
VEB=7V
100max
V(BR)CEO
IC=10mA
550min
3(Pulse6)
hFE
VCE=4V, IC=1A
10 to 30
VEBO
IC
Symbol
10.20.2
IB
1.5
VCE(sat)
IC=1A, IB=0.2A
0.5max
PC
50(Tc=25C)
VBE(sat)
IC=1A, IB=0.2A
1.2max
Tj
150
fT
VCE=12V, IE=0.25A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
35typ
pF
Tstg
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
250
10
0.15
0.45
0.7max
4.0max
0.5max
100m A
I B =40mA
5
I C /I B =5 Const.
1.0
V B E (sat)
0.5
0.1
0.5
55C
10
5 6
t s tg
V C C 250V
I C :I B 1 :I B2 =1:0.15:0.45
1
tf
0.5
t on
0.1
0.2
0.5
100
1000
Time t(ms)
P c T a Derating
50
100
500
1000
nk
50
si
0.01
10
at
0.05
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
he
0.1
30
ite
500
0.5
40
fin
100
In
Without Heatsink
Natural Cooling
50
10
ith
0.1
10
0.5
0.01
0.3
7
5
0.05
0.5
50
10
1.0
7
5
7
5
25C
Swit ching Time
125C
0.5
0.5
(V C E =4V)
0.1
0.05
V C E (sat)
5
4
0.02
0
0.03 0.05
40
1.4
1.5
j- a ( C/W)
150 mA
2.5
(V C E =4V)
300mA
200 mA
1.35

a. Part No.
b. Lot No.

40
B C E
RL
()
0m
3.750.2
2.5
VCC
(V)
2.00.1
0.65 +0.2
-0.1
4.80.2
3.00.2
Conditions
16.00.7
Unit
900
8.80.2
Ratings
VCBO
Symbol
(Ta=25C)
4.0max
12.0min
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
131
2SC5249
IB
1.5
PC
35(Tc=25C)
Tj
Tstg
600min
hFE
VCE=4V, IC=1A
20 to 40
VCE(sat)
IC=1A, IB=0.2A
0.5max
VBE(sat)
IC=1A, IB=0.2A
1.2max
150
fT
VCE=12V, IE=0.3A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
50typ
pF
16.90.3
100max
3.9
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
200
200
10
0.1
0.1
1.0max
19max
1.0max
0
0.01
0.05
0.1
0.5
30
25C
55C
10
0.5
10
V C C 200V
5 I C :I B1 :I B 2 =10:1:1
t on
tf
1
0.5
0.2
0.1
0.5
Tem
0.5
0.3
10
100
nk
si
0.05
10
at
0.05
10
20
he
0.1
ite
0.1
Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than 1%
fin
0.5
In
30
ith
Without Heatsink
Natural Cooling
P c T a Derating
0.5
1000
35
100
Time t(ms)

7
1.0
0.5
0.1
t s tg
100
Switching Ti me
125C
0.05
200
5
0.01
p)
(V C E =4V)
50
j- a ( C/W)
25C (Case Temp)

55C (Case Temp)
se
I B =20mA
125C (Case Temp)
(Ca
50mA
I C / I B =5 Const.
100m A
(V C E =4V)
0.5
125
200 mA
2.40.2

a. Part No.
b. Lot No.
B C E
300mA
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.20.2
VCC
(V)
1.350.15
2.54
3.30.2
a
b
3(Pulse6)
IC
VEB=7V
IC=10mA
Temp
V(BR)CEO
4.20.2
2.8 c0.5
(Case
IEBO
10.10.2
55C
4.00.2
600
VEBO
100max
0.80.2
VCEO
VCB=600V
0.2
ICBO
Unit
mp)
Ratings
e Te
600
(Ta=25C)
Conditions
(Cas
VCBO
Symbol
25C
Unit
8.40.2
Ratings
Symbol
13.0min
10
Without Heatsink
50
100
132
500
50
100
500
2
0
25
50
75
100
125
150
2SC5271
ICBO
VCEO
200
IEBO
VEBO
V(BR)CEO
5(Pulse10)
hFE1
IB
hFE2
VCE=2V, IC=1mA
15min
PC
30(Tc=25C)
VCE(sat)
IC=2.5A, IB=0.5A
1.0max
Tj
150
VBE(sat)
IC=2.5A, IB=0.5A
1.5max
55 to +150
fT
VCE=12V, IE=0.5A
10typ
MHz
COB
VCB=10V, f=1MHz
45typ
pF
Tstg
100max
VEB=7V
100max
IC=10mA
200min
VCE=2V, IC=2.5A
10 to 30
150
RL
()
60
IC
(A)
2.5
4.20.2
2.8 c0.5
3.30.2
a
b
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.40.2
2.20.2

VCC
(V)
10.10.2
3.9
IC
VCB=300V

4.00.2
300
Unit
0.80.2
VCBO
Ratings
0.2
(Ta=25C)
Conditions
8.40.2
Symbol
Unit
16.90.3
Ratings
Symbol
13.0min
Application : Resonant Switching Regulator and General Purpose
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
10
0.5
1.0
0.3max
1.0max
0.1max
B C E

a. Part No.
b. Lot No.
133
2SC5287
100max
VCEO
550
IEBO
VEB=7V
100max
V(BR)CEO
5(Pulse10)
hFE
IC
IC=10mA
550min
VCE=4V, IC=1.8A
10 to 25
IB
2.5
VCE(sat)
IC=1.8A, IB=0.36A
0.5max
PC
80(Tc=25C)
VBE(sat)
IC=1.8A, IB=0.36A
1.2max
Tj
150
fT
VCE=12V, IE=0.35A
6typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
50typ
pF
Tstg
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(s)
tstg
(s)
tf
(s)
250
139
1.8
10
0.27
0.9
0.7max
4.0max
0.5max
1.4

a. Part No.
b. Lot No.
400 mA
250 mA
3
150 mA
2
I B =50mA
1.0
V B E (sat)
0.5
0
0.03 0.05
0.1
0.5
25C
Switching T im e
55C
10
10
tf
0.5
t on
0.1
0.2
0.5
50
10
0.5
0.3
10
P c T a Derating
fin
ite
he
40
at
si
nk
0.1
0.1
Without Heatsink
Natural Cooling
IB2=1.0A
L=3mH
Duty:less than 1%
In
0.5
ith
60
Without Heatsink
Natural Cooling
20
0.05
0.05
100
500
1000
80
0.5
100
Time t(ms)
10
134
1.0
20
50
0.5
20
10
0.03
10
t s tg
V C C 250V
I C :I B1 :I B 2 =1:0.15:0.5
5 7
6
5
125C
0.5
(V C E =4V)
0.1
0.05
5
4
0.02
V C E (sat)
j - a ( C/W)
I C /I B =5 Const.
1.5

600mA
mA
4
(V CE =4V)
0
70
0.65 +0.2
-0.1
5.450.1
B
IC
(A)
2
3
5.450.1
RL
()
40
3.20.1
1.05 +0.2
-0.1
VCC
(V)
2.00.1
4.80.2
20.0min
VEBO
15.60.4
9.6
1.8
Unit
VCB=800V
Symbol
5.00.2
Ratings
ICBO
2.0
Conditions
4.0
Unit
900
19.90.3
Ratings
VCBO
Symbol
(Ta=25C)
4.0max
0.03
50
Without Heatsink
100
500
1000
3.5
0
25
50
75
100
125
150
2SC5333
IC
hFE
VEB=6V
1.0max
mA
IC=25mA
300min
VCE=4V, IC=0.5A
30min
IB
0.2
VCE(sat)
IC=1.0A, IB=0.2A
1.0max
PC
35(Tc=25C)
fT
VCE=12V, IE=0.2A
10typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
75typ
pF
55to+150
Tstg
1.350.15
1.350.15
IB1
(A)
0.1
0.2
to p
4.0typ
1.0typ
0.1
0.2
(V C E =4V)
10
1000 2000
125
100
Typ
50
0.2
25C
50
10
3
30
10
50
100
0.4
1.0
500 1000 2000
0.5
0.3
10
100
1000
Time t(ms)
P c T a Derating
(V C E =12V)
35
ith
In
fin
ite
20
he
at
si
nk
30
W
10
0.8
20
Typ
0.6
200
100
(V C E =4V)
10
0.3
200
2A
I C =1A
100
(V CE =4V)
mp)
0.3typ

a. Part No.
b. Lot No.
B C E
e Te
mA
A /s
I B =2 0m
tf
(s)
2
I
tstg
(s)
(Cas
200
B=
ton
(s)
IB2
(A)
125C
1.0
2.40.2
2.20.2
100
100
VB2
(V)
IC
(A)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
j- a (C /W )
RL
()
3.30.2
a
b

VCC
(V)
4.20.2
2.8 c0.5
p)
V(BR)CEO
10.10.2
mp)
IEBO
mA
ase Te
1.0max
ase Tem
300
VEBO
VCB=300V
30C (C
VCEO

4.00.2
ICBO
Unit
25C (C
Ratings
0.80.2
300
Conditions
0.2
VCBO
Symbol
3.9
Unit
16.90.3
Ratings
Symbol
(Ta=25C)
8.40.2
13.0min
Application : Series Regulator, Switch, and General Purpose
10
Without Heatsink
0
0.003
0.01
0.05 0.1
0.5
2
0
25
50
75
100
125
150
135
2SC5370
40
IEBO
VEBO
V(BR)CEO
IC
12
Ratings
Unit
VCB=60V
10max
Conditions
VEB=7V
10max
IC=25mA
40min
hFE
VCE=2V, IC=6A
70min
IB
VCE(sat)
IC=6A, IB=0.3A
0.3max
PC
30(Tc=25C)
VBE(sat)
IC=6A, IB=0.3A
1.2max
Tj
150
fT
VCE=12V, IE=3A
90typ
MHz
COB
VCB=10V, f=1MHz
120typ
pF
Tstg
55to+150
hFE Rank
O(70 to 140), Y(120 to 240), G(200 to 400)
10.10.2
4.00.2
VCEO
Symbol
4.20.2
2.8 c0.5
3.30.2
a
b
0.80.2
ICBO
0.2
3.9
Unit
60
8.40.2
Ratings
VCBO
Symbol
(Ta=25C)
16.90.3
13.0min
Application : Emergency Lighting Inverter and General Purpose
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.40.2
2.20.2
B C E
136

a. Part No.
b. Lot No.
2SD1769
Unit
Conditions
120
ICBO
VCB=120V
10max
VCEO
120
IEBO
VEB=6V
20max
mA
V(BR)CEO
6(Pulse10)
hFE
IC=10mA
120min
VCE=2V, IC=3A
2000min
10.20.2
IB
VCE(sat)
IC=3A, IB=3mA
1.5max
PC
50(Tc=25C)
VBE(sat)
IC=3A, IB=3mA
2.0max
Tj
150
fT
VCE=12V, IE=0.2A
100typ
55 to +150
COB
VCB=10V, f=1MHz
typ
0.65 +0.2
-0.1
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
1.5
0.5typ
5.5typ
1.5typ
I B =0.3mA
0
0.3
10
50
10000
5000
1000
500
1000
5C
C
25
500
12
100
50
30
0.03 0.05 0.1
10
0.5
10
10
p)
Temp
mp)
Tem
0.5
0.2
10
50 100
1000
5000
Time t(ms)
P c T a Derating
(V C E =12V)
20
120
50
100
200
nk
50
si
10
at
he
0.08
3
30
ite
fin
Without Heatsink
Natural Cooling
In
0.5
ith
0.5
40
W
0.05
500
50
s
1m
s
3m
ms
10
D
10
Typ
100
(V C E =2V)
Typ
0.5
10000
0.1
(V C E =2V)
80
0.03
100
5000
(Case
4A
2A
30C
I C =6 A
e Te
0 .4 m A
se
(Ca
A
0 .5 m
(Cas
0 .7 m
1mA
125
1 .5 m
(V CE =2V)
j - a (C /W)
5m
2mA
mA
1.4

a. Part No.
b. Lot No.

A
m
20
10
2.5
B C E
RL
()
1.35
2.5
VCC
(V)
pF
2.00.1
3.750.2
V
MHz
4.80.2
25C
Tstg
Unit
3.00.2
Ratings
VCBO
IC
(2.5k)(200) E
(Ta=25C)
16.00.7
Symbol
8.80.2
Ratings
VEBO
4.0max
Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
12.0min
Darlington
Symbol
Equivalent
circuit
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
137
2SD1785
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258)
VCEO
120
IEBO
VEBO
V(BR)CEO
6(Pulse10)
hFE
IC
Symbol
Conditions
Unit
VCB=120V
10max
10max
mA
VEB=6V
IC=10mA
120min
VCE=2V, IC=3A
2000min
VCE(sat)
PC
30(Tc=25C)
fT
VCE=12V, IE=0.1A
100typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
70typ
pF
55 to +150
Tstg
1.5max
RL
()
VCC
(V)
IC
(A)
10
30
VBB1
(V)
10
1.5
1.5typ
5.5typ
0.3
10
50
(V C E =2V)
10000
5000
1000
500
12
25
1000
500
100
50
30
0.03 0.05 0.1
100
1
5C
C
Ty
0.5
10
0.5
)
mp)
10
0.5
10
100
1000
Time t(ms)
emp
10000
0.1
0.4
(V C E =2V)
0.03
100
5000
e Te
4A
2A
(Cas
I C =6 A
30C
0 .4 m A
mp
0 .5 m
se T
Te
0 .7 m
se
1mA
(Ca
(Ca
1 .5 m
25C
2mA
5C
3m
12
5m
j- a ( C/W)
A
m
1
20
0.5typ
B C E
(V CE =2V)
0m
I B =0.3mA
2.40.2

a. Part No.
b. Lot No.
tf
(s)
tstg
(s)
ton
(s)
IB2
(mA)
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.20.2
IB1
(mA)
VBB2
(V)
1.350.15
2.54
4.20.2
2.8 c0.5
3.30.2
a
b
IB
IC=2A, IB=3mA
10.10.2
4.00.2
ICBO
0.80.2
0.2
Unit
120
3.9
Ratings
(Ta=25C)
Ratings
8.40.2
VCBO
(2.5k)(200) E
16.90.3
13.0min
Darlington
Symbol
Equivalent
circuit
P c T a Derating
(V C E =12V)
he
at
si
nk
ite
0.1
fin
Without Heatsink
Natural Cooling
20
In
0.5
ith
ms
10
50
1m
10
Typ
100
30
20
120
10
Without Heatsink
2
0
0.05
0.1
0.5
138
0.05
3
10
50
100
200
25
50
75
100
125
150
2SD1796
Built-in Avalanche Diode

for Surge Absorbing
Darlington
IC
hFE
10max
mA
VEB=6V
IC=10mA
6010
VCE=4V, IC=3A
2000min
0.5
VCE(sat)
IC=3A, IB=10mA
1.5max
PC
25(Tc=25C)
fT
VCE=12V, IE=0.2A
60typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
45 typ
pF
55 to +150
1.350.15
1.350.15
0 .6 m A
0. 5m A
0.4 mA
0.3mA
(V CE =2V)
I C=
I C= 2 A
I C =1 A
0
0.2
0.5
4A
I C= 3 A
10
50
100
(V C E =4V)
20000
Typ
5000
1000
500
100
10000
5000
125
C
25
0C
3
1000
500
100
50
1
50
0.05
0.1
0.5
1
V C B =10V
I E =2V
0.5
10
100
1000
Time t(ms)
10000
0.5
20000
0.1
(V C E =4V)
0.05
P c T a Derating
(V C E =10V)
30
10
10
100
Typ
60
40
20
0m
80
DC
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
1m
10
120
p)
A
0 .8 m
1.5typ
e Tem
1.0m
4.0typ
B C E
(Cas
=2
IB
0m

a. Part No.
b. Lot No.
tf
(s)
4
1.0typ
10
10
tstg
(s)
125C
10
ton
(s)
IB2
(mA)
IB1
(mA)
2.40.2
2.20.2
j- a ( C/W)
10
30
VBB2
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54

VBB1
(V)
3.30.2
a
b
13.0min
IB
4.20.2
2.8 c0.5
p)
V(BR)CEO
10.10.2
p)
IEBO
ase Tem
10max
ase Tem
6010
VEBO
Unit
VCB=50V
25C (C
VCEO
Conditions
30C (C
ICBO
4.00.2
0.80.2
Unit
6010
(Ta=25C)
Ratings
0.2
Ratings
IC
(A)
(3 k )(15 0) E
3.9
Symbol
VCBO
RL
()
8.40.2
Symbol
VCC
(V)
16.90.3
Tstg
Equivalent
circuit
1
0.5
Without Heatsink
Natural Cooling
0.1
20
W
ith
In
150x150x2
1 00x 1 0
10
0x
fin
ite
he
at
si
nk
50x50x2
Without Heatsink
2
0
0.01
0.05
0.1
10
50
100
25
50
75
100
125
150
139
2SD2014
ICBO
VCEO
80
IEBO
VEBO
V(BR)CEO
IC
hFE
VCE=2V, IC=3A
2000min
Conditions
Unit
VCB=120V
10max
VEB=6V
10max
mA
IC=10mA
80min
10.10.2
IB
0.5
VCE(sat)
IC=3A, IB=3mA
1.5max
PC
25(Tc=25C)
VBE(sat)
IC=3A, IB=3mA
2.0max
Tj
150
fT
VCE=12V, IE=0.1A
75typ
MHz
COB
VCB=10V, f=1MHz
45typ
pF
3.9
1.350.15
1.350.15
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
10
10
1.0typ
4.0typ
1.5typ
0.3mA
1A
0.2
10
50
(V C E =4V)
20000
10000
Typ
5000
1000
500
100
5000
125
C
25
0C
3
1000
500
100
50
0.5
10000
0.1
50
30
0.03
0.1
0.5
p)
ase Tem
ase Tem
0.5
10
50
100
500 1000
Time t(ms)
p)
p)
e Tem
20000
P c T a Derating
(V C E =10V)
25
10
si
nk
at
0.1
0x
he
Without Heatsink
Natural Cooling
1 00x 1 0
10
ite
0.5
150x150x2
fin
20
In
20
DC
ith
40
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Typ
60
0m
80
10
100
10
30
1m
M aximu m Power Dissipa tion P C (W)
120
100
(V C E =4V)
0.03
30
(Cas
2A
1
I C =4 A
3A
30C (C
125C
0. 4m A
0. 5m A
(V CE =4V)
4
j- a ( C/W)
0 .6 m A
IB
0 .8 m

a. Part No.
b. Lot No.
B C E
=2
0m
m
1.0
2.40.2
2.20.2
VCC
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
3.30.2
a
b
25C (C
55 to +150
4.20.2
2.8 c0.5
4.00.2
0.80.2
120
0.2
Unit
VCBO
Tstg
(Ta=25C)
Ratings
8.40.2
Ratings
Symbol
(3k) (200) E
16.90.3
13.0min
Darlington
Symbol
Equivalent
circuit
50x50x2
Without Heatsink
2
0
0.02
0.05
0.05 0.1
0.5
140
10
50
100
25
50
75
100
125
150
2SD2015
IC
10max
mA
VEB=6V
IC=10mA
120min
hFE
VCE=2V, IC=2A
2000min
IB
0.5
VCE(sat)
IC=2A, IB=2mA
1.5max
PC
25(Tc=25C)
VBE(sat)
IC=2A, IB=2mA
2.0max
Tj
150
fT
VCE=12V, IE=0.1A
40typ
MHz
COB
VCB=10V, f=1MHz
40typ
pF
55 to +150
Tstg
3.9
1.350.15
1.350.15
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
40
20
10
10
10
0.6typ
5.0typ
2.0typ
I C =4 A
3A
2A
1A
0.2
10
50
(V C E =4V)
20000
Typ
1000
500
100
10000
5000
5000
12
5C
25
1000
500
0C
100
0.03
0.1
0.5
mp)
50
0.03 0.05
0.1
0.5
0.5
10
50
100
500 1000
Time t(ms)
20000
P c T a Derating
(V C E =12V)
30
10
5
10
100ms
50
40
Typ
30
20
1m
m
30
DC
1
0.5
Without Heatsink
Natural Cooling
0.1
10
0.5
ith
In
150x150x2
1 00x 1 0
10
0x
fin
ite
he
at
si
nk
50x50x2
0.03
0.05 0.1
20
Without Heatsink
0.05
0
0.02
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
60
100
(V C E =4V)
50
10000
e Te
0.3mA
Cas
C (
0.4mA
125
0.5mA
(V CE =4V)
j- a ( C/W)
0.6mA
0.8mA

a. Part No.
b. Lot No.
B C E

IB
m
=1
2.40.2
2.20.2
VCC
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
3.30.2
a
b
p)
V(BR)CEO
4.20.2
2.8 c0.5
mp)
IEBO
10.10.2
ase Te
ase Tem
120
VEBO
10max
30C (C
VCEO
Unit
VCB=150V
4.00.2
ICBO
0.80.2
Ratings
0.2
150
(Ta=25C)
Conditions
25C (C
Unit
VCBO
Symbol
8.40.2
Ratings
(3k) (500) E
16.90.3
13.0min
Darlington
Symbol
Equivalent
circuit
10
50
100
200
25
50
75
100
125
150
141
2SD2016
VCEO
200
IEBO
VEBO
V(BR)CEO
IC
hFE
Symbol
Conditions
VCB=200V
10max
10max
mA
VEB=6V
200min
IC=10mA
1000 to 15000
VCE=4V, IC=1A
0.5
VCE(sat)
IC=1A, IB=1.5mA
1.5max
PC
25(Tc=25C)
VBE(sat)
IC=1A, IB=1.5mA
2.0max
Tj
150
fT
VCE=12V, IE=0.1A
90typ
MHz
COB
VCB=10V, f=1MHz
40typ
pF
55 to +150
4.20.2
2.8 c0.5
3.30.2
a
b
IB
Tstg
10.10.2
4.00.2
ICBO
0.80.2
0.2
200
Unit
3.9
Unit
VCBO
Symbol
(Ta=25C)
Ratings
8.40.2
Ratings
(2k) (200) E
Application : Igniter, Relay and General Purpose
16.90.3
13.0min
Darlington
Equivalent
circuit
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.40.2
2.20.2

a. Part No.
b. Lot No.
B C E
0.2
(V C E =4V)
10000
1000
500
125
5000
5000
1000
25
500
C
55
100
50
100
0.5
10
0.03
0.1
0.5
p)
ase Tem
0.5
10
50
100
500 1000
Time t(ms)
mp)
10000
0.1
(V C E =4V)
P c T a Derating
(V C E =12V)
30
80
50
0.03
12 5C
55C (C
25C
e Te
5 5C
(Cas
p)
25C
.3m
Tem
I B= 0
se
(Ca
0.5m
(V CE =4V)
1mA
125
1.5
mA
j - a ( C/W)
3m
60
40
20
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
W
ith
In
150x150x2
1 00x 1 0
10
0x
fin
ite
he
at
si
nk
50x50x2
Without Heatsink
2
0
0.01
0.05
0.1
0.5
142
25
50
75
100
125
150
2SD2017
VCEO
250
IEBO
VEBO
20
V(BR)CEO
IC
hFE
VCE=2V, IC=2A
2000min
Conditions
Unit
VCB=300V
100max
VEB=20V
10max
mA
IC=25mA
250min
10.10.2
IB
VCE(sat)
IC=2A, IB=2mA
1.5max
PC
35(Tc=25C)
VBE(sat)
IC=2A, IB=2mA
2.0max
Tj
150
fT
VCE=12V, IE=1A
20typ
MHz
COB
VCB=10V, f=1MHz
65typ
pF
3.9
1.350.15
1.350.15
1mA
I B = 0 .4
mA
I C =8A
1
I C =3A
0
0.2 0.5
10
50 100
(V C E =2V)
10000
5000
Typ
1000
500
100
1000
125
25
0C
500
100
50
30
0.03
5 6
0.1
0.5
56
0.5
0.3
10
50
100
500 1000
Time t(ms)
P c T a Derating
(V C E =12V)
30
35
20
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
10
25
C)
150x150x2
at
si
nk
Without Heatsink
Natural Cooling
0.05
he
0.1
ite
0.5
20
fin
C=
In
(T
ith
10
30
20
D.
1m
10
Typ
10000
0.5
500 1000
(V C E =2V)
0.1
50
30
0.03
I C =1A
5000
e Te
mp)
(Case
Temp
)
30C
2mA
(Cas
25C
4m
p)
(V C E =2V)
Tem
8m
se
3.0typ
m
20
6
A
16.0typ
B C E
0m
0.6typ
10

a. Part No.
b. Lot No.
tf
(s)
(Ca
10
tstg
(s)
125
ton
(s)
IB2
(mA)
IB1
(mA)
VBB2
(V)
50
100
VBB1
(V)
2.40.2
2.20.2
j- a ( C/W)
IC
(A)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
RL
()
3.30.2
a
b

VCC
(V)
4.20.2
2.8 c0.5
4.00.2
ICBO
0.80.2
Ratings
0.2
Unit
300
Symbol
(Ta=25C)
VCBO
55 to +150
8.40.2
Ratings
Tstg
( 4k )
16.90.3
13.0min
Darlington
Symbol
Equivalent
circuit
100x100x2
10
50x50x2
Without Heatsink
0
0.02 0.05 0.1
0.5
5 6
0.02
3
10
50
100
300
2
0
25
50
75
100
125
150
143
2SD2045
VCB=120V
10max
VCEO
120
IEBO
VEB=6V
10max
mA
V(BR)CEO
IC=10mA
120min
6(Pulse10)
hFE
VCE=2V, IC=3A
2000min
IB
VCE(sat)
IC=3A, IB=3mA
1.5max
PC
50(Tc=25C)
VBE(sat)
IC=3A, IB=3mA
2.0max
Tj
150
fT
VCE=12V, IE=1A
50typ
MHz
COB
VCB=10V, f=1MHz
70typ
pF
3.3
3.0
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
10
0.5typ
5.5typ
1.5typ
0.5
0.1
10
50
(V C E =2V)
10000
1000
500
5000
12
1000
500
Typ
C
25
C
0
3
100
100
1
50
0.03
5 6
mp)
Temp
)
0.1
0.5
56
0.5
0.2
10
10000
0.5
(V C E =2V)
0.1
100
50
0.03
p)
5000
2A
4A
e Te
I C =8A
em
(Cas
eT
Cas
.4 m
B= 0
C (

a. Part No.
b. Lot No.
125
0.5m
3.35
(V C E =2V)
1.5
j- a (C /W)
0.7m
4.4

2m
5m
20mA
0.65 +0.2
-0.1
5.450.1
1.5
RL
()
mA
0.8
2.15
1.05 +0.2
-0.1
VCC
(V)
1.75
5.450.1
3.30.2
a
b
(Case
55 to +150
3.45 0.2
25C
Tstg
5.50.2
30C
IC
15.60.2
23.00.3
.VEBO
0.80.2
Unit
ICBO
5.5
Ratings
1.6
Conditions
120
9.50.2
Unit
VCBO
Symbol
(Ta=25C)
Ratings
Symbol
(2.5k)(200) E
Application : Driver for Solenoid, Motor and General Purpose
(Ta=25C)
16.2
Darlington
Equivalent
circuit
100
1000
Time t(ms)
P c T a Derating
(V C E =12V)
50
20
120
Typ
10
50
100
200
20
nk
144
5 6
si
at
0.5
0.05
3
he
0
0.05 0.1
ite
0.1
30
fin
Without Heatsink
Natural Cooling
20
In
0.5
ith
40
W
40
60
1m
80
DC
ms
10
100
10
10
Without Heatsink
0
25
50
75
100
125
150
2SD2081
ICBO
VCEO
120
IEBO
VEBO
V(BR)CEO
10(Pulse15)
IC
VCB=120V
10max
10max
mA
VEB=6V
IC=10mA
120min
hFE
VCE=4V, IC=5A
2000min
VCE(sat)
IC=5A, IB=5mA
1.5max
30(Tc=25C)
VBE(sat)
IC=5A, IB=5mA
2.0max
fT
VCE=12V, IE=0.5A
60typ
MHz
COB
VCB=10V, f=1MHz
95typ
pF
150
Tstg
55 to +150
3.9
PC
4.20.2
2.8 c0.5
3.30.2
a
b
IB
Tj
10.10.2
4.00.2
Unit
0.80.2
Unit
120
Ratings
0.2
Ratings
VCBO
(Ta=25C)
Conditions
8.40.2
Symbol
(2k) (200) E
16.90.3
13.0min
Darlington
Symbol
Equivalent
circuit
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.40.2
2.20.2

a. Part No.
b. Lot No.
B C E

I B =0.5mA
1A
2
0.2
0.5
10
50
(V C E =4V)
20000
10000
Typ
5000
1000
500
100
5000
12
5C
25
1000
10000
0.5
500
0C
100
50
30
0.03
10
0.1
0.5
p)
10
0.5
0.2
10
p)
20000
0.1
(V C E =4V)
100
1000
Time t(ms)
P c T a Derating
(V C E =12V)
120
30
30
10
100
DC
si
nk
0.1
at
20
he
Without Heatsink
Natural Cooling
ite
1
0.5
20
fin
40
In
60
ith
80
10
1m
Typ
Cut- off Fr equ ency f T ( MH Z )
100 200
50
30
0.03
ase Tem
5A
ase Tem
I C =10A
25C (C
0. 7m A
30C (C
1mA
mp)
10
e Te
2m A
(Cas
3mA
(V C E =4V)
10
125C
5mA
j - a ( C/W)
A
m
50
A
0m
15
10
Without Heatsink
2
0
0.05 0.1
0.5
10
0.05
3
10
50
100
200
25
50
75
100
125
150
145
2SD2082
Conditions
ICBO
VCB=120V
10max
VCEO
120
IEBO
VEB=6V
10max
mA
V(BR)CEO
16(Pulse26)
hFE
IC=10mA
120min
VCE=4V, IC=8A
2000min
15.60.2
23.00.3
VCE(sat)
IC=8A, IB=16mA
1.5max
PC
75(Tc=25C)
VBE(sat)
IC=8A, IB=16mA
2.5max
Tj
150
fT
VCE=12V, IE=1A
20typ
MHz
COB
VCB=10V, f=1MHz
210typ
pF
3.3
1.05
5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
40
10
16
16
0.6typ
7.0typ
1.5typ
0.2
0.5
10
50
(V C E =4V)
20000
5000
1000
500
10
125
5000
25
10000
Typ
30
1000
500
100
0.02
16
0.5
mp)
e Te
Cas
10
16
1
0.5
0.1
10
30000
0.5
(V C E =4V)
100 200
100
0.2
C (
4A
30
8A
1
8
mp
I C =16A
10000
12
emp
10
Te
I B =1m A
(V CE =4V)
16
se
1. 5m A
3.35

a. Part No.
b. Lot No.
(Ca
3mA
5C
20
1.5
12
6mA
0.65 +0.2
-0.1
j - a (C /W)
m
12
20
40m
26
4.4
+0.2
-0.1
5.450.1
1.5
VCC
(V)
0.8
2.15
se T
55 to +150
1.75
(Ca
Tstg
3.45 0.2
3.0
IB
5.50.2
3.30.2
a
b
25C
IC
Unit
0.80.2
Unit
120
5.5
Ratings
VCBO
VEBO
(Ta=25C)
Ratings
1.6
Symbol
(2k) (100) E
9.50.2
16.2
Darlington
Symbol
Equivalent
circuit
100
1000
Time t(ms)
P c T a Derating
(V C E =12V)
30
80
50
0
DC
146
10 16
0.05
0.03
3
10
50
100
200
nk
0.5
si
0
0.05 0.1
40
at
Without Heatsink
Natural Cooling
0.1
he
0.5
ite
60
fin
10
In
10
1m
ith
20
10
10
Typ
20
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SD2083
IEBO
VEB=6V
10max
mA
V(BR)CEO
25(Pulse40)
hFE
IC=25mA
120min
VCE=4V, IC=12A
2000min
VCE(sat)
IC=12A, IB=24mA
1.8max
PC
120(Tc=25C)
VBE(sat)
IC=12A, IB=24mA
2.5max
Tj
150
fT
VCE=12V, IE=1A
20typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
340typ
pF
5.450.1
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
24
12
10
24
24
1.0typ
6.0typ
1.0typ
10
0
0.5
10
50
100

(V C E =4V)
20000
10000
Typ
5000
1000
500
0.5
10
125
5000
25
20000
100
0.2
C
30
1000
500
100
0.02
40
0.5
p)
10
mp)
2.2
40
3
0.5
0.1
10
em
(V C E =4V)
100
1000
Time t(ms)
P c T a Derating
(V C E =12V)
120
100
100
1m
10
0.2
3
10
50
100
200
nk
si
at
0.5
he
0
0.1
ite
0.5
fin
Without Heatsink
Natural Cooling
In
ith
10
50
DC
10
100
W
50
Typ
Cut -off Fre quency f T (M H Z )
500
10000
10
e Te
I B =1.5m A
12A
6A
eT
3m A
20
I C =25A
as
5mA
20
(C
8mA
5C
30
(V C E =4V)
25
12
12mA
1.4
j - a (C/W)
20m

a. Part No.
b. Lot No.

0.65 +0.2
-0.1
5.450.1
B
RL
()
m
30
2
3
1.05 +0.2
-0.1
VCC
(V)
40
3.20.1
2.00.1
IB
Tstg
4.80.2
Cas
IC
19.90.3
VEBO
1.8
15.60.4
9.6
5.00.2
2.0
10max
C (
120
VCB=120V
emp
VCEO
Unit
ICBO
30
Ratings
se T
120
(Ta=25C)
Conditions
(Ca
VCBO
Symbol
(2k) (100) E
25C
Unit
4.0
Ratings
4.0max
20.0min
Darlington
Symbol
Equivalent
circuit
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
147
Equivalent circuit
2SD2141
ICBO
VCEO
38050
IEBO
VEBO
V(BR)CEO
6(Pulse10)
hFE
IC
Symbol
Conditions
VCB=330V
10max
VEB=6V
20max
mA
IC=25mA
330 to 430
1500min
VCE=2V, IC=3A
VCE(sat)
IC=4A, IB=20mA
1.5max
PC
35(Tc=25C)
fT
VCE=12V, IE=0.5A
20typ
MHz
150
COB
VCB=10V, f=1MHz
95typ
pF
55 to +150
Tstg
4.20.2
2.8 c0.5
3.30.2
a
b
13.0min
IB
Tj
10.10.2
4.00.2
38050
Unit
0.80.2
Unit
VCBO
(Ta=25C)
Ratings
3.9
Ratings
0.2
Symbol
(1.5k)(100) E
8.40.2
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
16.90.3
Built-in Avalanche Diode

for Surge Absorbing
Darlington
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.40.2
2.20.2

a. Part No.
b. Lot No.
B C E
0.2
0.5
10
50
10000
(V C E =2V)
5000
1000
500
100
50
12
1000
25
500
Typ
100
50
0.1
0.5
20
0.02
10
0.1
1.0
0.5
Temp
2.4
10
1
0.5
0.1
10
2.0

10000
10
0.02
1.0
(V C E =2V)
5000
100 200
p)
25
12
j- a ( C/W)
(Case
1A
30C
5
p)
I C =7A
5A
3A
em
I B =1 mA
Tem
eT
2mA
ase
4mA
(V CE =4V)
10
A
20m mA
18
as
(C
5C
0
15
10
90mA 60mA
120mA
C (C
100
1000
Time t(ms)
P c T a Derating
(V C E =12V)
40
20
40
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
10

148
0.01
1
10
50
100
500
nk
0.5
150x150x2
10
si
01
at
0.05
he
0
0.01
ite
0.05
20
fin
Without Heatsink
Natural Cooling
In
0.1
ith
1
0.5
30
1ms
10
0m
ms
10
5
30
20
10
Typ
100x100x2
50x50x2
2
0
Without Heatsink
0
25
50
75
100
125
150
Equivalent circuit
2SD2389
VCEO
150
VEBO
IC
Unit
ICBO
VCB=160V
100max
IEBO
VEB=5V
100max
V(BR)CEO
IC=30mA
150min
hFE
VCE=4V, IC=6A
5000min
IC=6A, IB=6mA
2.5max
19.90.3
Ratings
4.80.2
2.00.1
3.20.1
IB
VCE(sat)
PC
80(Tc=25C)
VBE(sat)
IC=6A, IB=6mA
3.0max
Tj
150
fT
VCE=12V, IE=1A
80typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
85typ
pF
Tstg
15.60.4
9.6
1.8
160
(Ta=25C)
Conditions
5.00.2
VCBO
Symbol
2.0
Unit
4.0
(Ta=25C)
Ratings
Symbol
4.0max
(7 0 )
20.0min
Darlington
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.450.1

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
10
10
0.6typ
10.0typ
0.9typ
0.2
0.5
10
50
100 200

(V C E =4V)
40000
50000
5000
Typ
10000
25C
10000
5000
30C
1000
1
500
0.2
0.5
(Cas
e Te
mp)
mp)
4
0.5
0.2
10
50 100
500 1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
120
80
20
m
10
Typ
40
at
si
nk
he
Without Heatsink
Natural Cooling
ite
0.1
20
fin
0.5
In
40
60
ith
60
80
0m
100
10
10
125C
0.5
(V C E =4V)
1000
02
e Te
I C =4A
(Cas
I B =0.3mA
I C =6A
30C
I C =8A
mp)
0.5mA
25C
e Te
0.8 mA
Cas
1.0m A
(V CE =4V)
C (
1. 3m A
125
1.5m
1.4
j - a ( C/W)
5m
2. A
0m
A
1.

a. Part No.
b. Lot No.
A
8m
2.
10mA
5.450.1
B
20
0.05
0
0.02
0.1
0.03
3
Without Heatsink
5
10
50
100
150
200
3.5
0
25
50
75
100
125
150
149
Equivalent circuit
2SD2390
VCB=160V
100max
IEBO
VEB=5V
100max
A
V
VCEO
150
5
V(BR)CEO
IC=30mA
150min
IC
10
hFE
VCE=4V, IC=7A
5000min
IB
VCE(sat)
IC=7A, IB=7mA
2.5max
PC
100(Tc=25C)
VBE(sat)
IC=7A, IB=7mA
3.0max
Tj
150
fT
VCE=12V, IE=2A
55typ
MHz
55 to +150
COB
4.80.2
2.00.1
3.20.1
pF
95typ
VCB=10V, f=1MHz
19.90.3
VEBO
Tstg
15.60.4
9.6
1.8
ICBO
160
2.0
Unit
VCBO
(Ta=25C)
Ratings
Unit
5.00.2
Symbol
Conditions
Ratings
4.0max
Symbol
4.0
(7 0 )
20.0min
Darlington
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.450.1

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
70
10
10
0.5typ
10.0typ
1.1typ
0.2
0.5
10
50
100 200
(V C E =4V)
70000
50000
10000
5000
10000
25C
5000
30C
125C
Typ
1000
5
500
0.2
10
0.5
mp)
mp)
e Te
e Te
2.5
10
1
0.5
0.1
10
50 100
500 1000 2000
Time t(ms)
40000
(V C E =4V)
0.5
1000
02
(Cas
I C =5A
p)
I C =7A
1
30C
I B =0.4mA
2
I C =10A
(Cas
0.6mA
Tem
0.8mA
25C
se
1m A
(Ca
1.2 mA
(V C E =4V)
10
125
1. 5m A
1.4
j- a ( C/W)
2m
10 m A
2.
5m
A
10

a. Part No.
b. Lot No.
5.450.1
B
P c T a Derating
(V C E =12V)
80
10
100
10
100
30
50
at
si
nk
he
Without Heatsink
Natural Cooling
20
ite
0.5
fin
In
40
ith
60
0m
Typ
10
DC
0.1
0
0.02
0.1
1
150
10
0.05
3
10
50
100
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Equivalent circuit
2SD2401

Unit
VCBO
160
ICBO
VCB=160V
100max
VCEO
150
IEBO
VEB=5V
100max
A
V
Ratings
Unit
VEBO
V(BR)CEO
IC=30mA
150min
IC
12
hFE
VCE=4V, IC=7A
5000min
IB
VCE(sat)
IC=7A, IB=7mA
2.5max
IC=7A, IB=7mA
3.0max
24.40.2
150(Tc=25C)
VBE(sat)
Tj
150
fT
VCE=12V, IE=2A
55typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
95typ
pF
a
b
2
3
5.450.1
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
70
10
10
0.5typ
10.0typ
1.1typ
0.2
0.5
10
50
(V C E =4V)
Typ
10000
5000
125C
10000
25C
5000
30C
70000
50000
1000
5
600
0.2
10 12
0.5
mp)
emp
e Te
Cas
2.6
10 12
0.5
0.1
10
50
100
500 1000 2000
Time t(ms)
se T
40000
P c T a Derating
(V C E =12V)
30
80
10
160
ite
he
80
at
si
nk
Without Heatsink
Natural Cooling
20
fin
0.5
In
120
ith
0m
40
DC
Typ
60
10
10
100
(V C E =4V)
100 200
0.5
p)
1000
02
C (
I C =5A
30
I B =0.4mA
I C =7A
Tem
0.6mA
I C =10A
(Ca
0.8mA
se
25C
1.0 mA
(Ca
1.2m A
10
1.5 mA
j- a ( C/W)
(V C E =4V)
12
125
2 .0 m
10
mA

a. Part No.
b. Lot No.

A
10m
2.5
3.0 +0.3
-0.1
5.450.1
B
VCC
(V)
0.65 +0.2
-0.1
1.05 +0.2
-0.1
12
2.1
2-3.20.1
PC
Tstg
6.00.2
36.40.3
Conditions
21.40.3
Symbol
(Ta=25C)
Ratings
Symbol
4.0max
(7 0 )
20.0min
Darlington
40
0.1
0
0.02
0.1
1
10
0.05
3
10
50
100
150
200
5
0
Without Heatsink
0
25
50
75
100
125
150
151
Equivalent circuit
2SD2438
ICBO
VCB=160V
100max
IEBO
VEB=5V
100max
V(BR)CEO
IC=30mA
150min
hFE
VCE=4V, IC=6A
5000min
IC=6A, IB=6mA
2.5max
150
VEBO
IC
PC
75(Tc=25C)
VBE(sat)
IC=6A, IB=6mA
3.0max
Tj
150
fT
VCE=12V, IE=1A
80typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
85typ
pF
1.75
16.2
Tstg
3.0
VCE(sat)
1.05 +0.2
-0.1
5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
( mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
60
10
10
0.6typ
10.0typ
0.9typ
I B =0.3mA
I C =4A
0.2
0.5
10
50
100 200

(V C E =4V)
40000
50000
Typ
10000
5000
125C
25C
10000
5000
30C
1000
1
500
0.2
0.5
2.5
4
0.5
0.2
10
50 100
500 1000 2000
Time t(ms)
(V C E =4V)
0.5
1000
02
4
)
Temp
)
I C =6A
Temp
I C =8A
(Case
0.5mA
mp)
e Te
0.8 mA
(V C E =4V)
25C
1.0m A

a. Part No.
b. Lot No.
(Cas
1. 3m A
125C
1.5m
3.35
1.5
j- a ( C/W)
5m
2. A
0m
A
2.
10mA
1.
4.4
A
8m
0.65 +0.2
-0.1
5.450.1
1.5
VCC
(V)
0.8
2.15
3.45 0.2
3.30.2
a
b
IB
5.50.2
5.5
VCEO
15.60.2
(Case
23.00.3
160
0.80.2
Unit
VCBO
(Ta=25C)
3.3
Symbol
Ratings
Unit
1.6
Conditions
Ratings
Symbol
P c T a Derating
(V C E =12V)
120
80
20
10
m
152
10
50
100
200
40
nk
si
at
0.1
0.05
3
he
0.1
0
0.02
ite
Without Heatsink
Natural Cooling
20
fin
40
1
0.5
60
In
60
ith
80
0m
DC
10
100
10
Typ
30C
(7 0 )
9.50.2
Darlington
20
3.5
0
Without Heatsink
0
50
100
150
Equivalent circuit
2SD2439
IEBO
VEB=5V
100max
A
V
V(BR)CEO
IC
10
hFE
IC=30mA
150min
VCE=4V, IC=7A
5000min
IC=7A, IB=7mA
2.5max
15.60.2
PC
80(Tc=25C)
VBE(sat)
IC=7A, IB=7mA
3.0max
Tj
150
fT
VCE=12V, IE=2A
55typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
95typ
pF
3.3
5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
70
10
10
0.5typ
10.0typ
1.1typ
0.6mA
I B =0.4mA
2
I C =10A
I C =7A
I C =5A
0.2
0.5
10
50
(V C E =4V)
10000
5000
125C
10000
25C
5000
30C
Typ
1000
5
500
0.2
10
0.5
2.5
10
1
0.5
0.1
10
50 100
500 1000 2000
Time t(ms)

70000
50000
(V C E =4V)
P c T a Derating
(V C E =12V)
80
30
10
10
he
40
at
si
nk
Without Heatsink
Natural Cooling
20
ite
0.5
fin
60
In
40
0m
ith
Typ
60
DC
10
80
100
100 200
40000
0.5
1000
02
p)
0.8mA
Tem
se
1m A
(V C E =4V)
10
(Ca
1.2 mA
3.35

a. Part No.
b. Lot No.
125
1. 5m A
0.65 +0.2
-0.1
1.5
j- a ( C/ W)
2m
10 m A
2.
5m
A
10
4.4
+0.2
-0.1
5.450.1
1.5
VCC
(V)
0.8
2.15
1.05
1.75
16.2
Tstg
3.0
VCE(sat)
3.45 0.2
3.30.2
a
b
IB
5.50.2
mp)
VEBO
0.80.2
5.5
100max
23.00.3
VCB=160V
1.6
150
ICBO
mp)
VCEO
Unit
e Te
Ratings
e Te
160
(Ta=25C)
Conditions
Symbol
(Cas
VCBO
(Cas
Unit
30C
Ratings
Symbol
25C
(7 0 )
9.50.2
Darlington
20
0.1
0
0.02
0.1
1
10
0.05
3
Without Heatsink
5
10
50
100
200
3.5
0
50
100
150
153
Equivalent circuit
2SD2557
Unit
VCB=200V
100max
VCEO
200
IEBO
VEB=6V
5max
mA
VEBO
V(BR)CEO
IC
hFE
IC=10mA
200min
VCE=5V, IC=1A
1500 to 6500
4.80.2
2.00.1
3.20.1
IB
VCE(sat)
IC=1A, IB=5mA
1.5max
PC
70(Tc=25C)
fT
VCE=10V, IE=0.5A
15typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
110typ
pF
55 to +150
Tstg
15.60.4
9.6
1.8
Ratings
ICBO
5.00.2
Conditions
2.0
Unit
200
19.90.3
Ratings
Symbol
(Ta=25C)
4.0
VCBO
Symbol
(3.2k)(450) E
4.0max
Application : Series Regulator and General Purpose
20.0min
Darlington
3
1.05 +0.2
-0.1
5.450.1
0.65 +0.2
-0.1
5.450.1
B
1.4

a. Part No.
b. Lot No.
V CE (sat) I C Temperature Characteristics (Typical)

Collector to Emitter Saturation Voltage V C E (sat) (V )
0.2
0.5
(V C E =5V)
8000
5000
C
125
C
25
30
100
50
10
5
0.02
0.1
0.5
5.0
1.0
0.5
0.3
10
70
ite
40
he
at
si
nk
0.1
fin
Without Heatsink
Natural Cooling
In
0.5
50
ith
60
W
1m
10
m
50 s
10
m
s
0m
s
10
500 1000 2000
P c T a Derating
30
30
20
10
Without Heatsink
10
50
100
154
50 100
Time t(ms)
0.05
5
2.5
500
p)
Collector Current Ic(A)
1000
ase Tem
em
p)
mp)
30C (C
eT
e Te
25
as
0 .3 m
(Cas
0 .6 m
(C
1 .2 m
25C
mA
5C
2.5
12
mA
(V C E =4V)
10
j- a (C /W)
50
mA
m
50
I B = 1 .0
(IC/IB=1000)
12
300
3.5
0
25
50
75
100
125
150
Equivalent circuit
2SD2558
ICBO
VCB=200V
100max
VCEO
200
IEBO
VEB=6V
5max
mA
VEBO
V(BR)CEO
IC
hFE
IC=10mA
200min
VCE=5V, IC=1A
1500 to 6500
Unit
VCE(sat)
IC=1A, IB=5mA
1.5max
fT
VCE=10V, IE=0.5A
15typ
MHz
Tj
150
COB
VCB=10V, f=1MHz
110typ
pF
3.30.2
a
b
1.75
1.05 +0.2
-0.1
5.450.1
5.450.1
1.5
4.4
V BE (sat) I C Temperature Characteristics (Typical)
0.5
0.2
(V C E =5V)
8000
5000
C
125
C
25
30
100
50
10
5
0.02
0.1
0.5
5.0
1.0
0.5
0.3
10
50 100
500 1000 2000
Time t(ms)
P c T a Derating
60
30
1m
s
10
40
In
fin
ite
he
at
si
nk
Without Heatsink
Natural Cooling
ith
1
0.5
20
0.1
0.05
5
2.5
500
p)
1000
ase Tem
125
em
p)
mp)
eT
0 .3 m
2 5 C
e Te
3 0 C
as
0 .6 m
(Cas
(C
1 .2 m
25C
mA
(V C E =4V)
5C
2.5
3.35

a. Part No.
b. Lot No.
12
mA
10
4
mA
0.65 +0.2
-0.1
j - a (C /W)
50
Base to Emitter Saturation Voltage V B E (sat)(V )
A
I B = 1 .0
25
1.5
(IC/IB=1000)
5
A
0m
0.8
2.15
30C (C
55 to +150
3.45 0.2
3.0
60(Tc=25C)
5.50.2
3.3
PC
Tstg
15.60.2
IB
0.80.2
Conditions
5.5
Unit
200
1.6
Ratings
VCBO
Symbol
(Ta=25C)
9.50.2
Ratings
Symbol
(3.2k)(450) E
Application : Series Regulator and General Purpose
23.00.3
16.2
Darlington
Without Heatsink
10
50
100
300
3.5
0
25
50
75
100
125
150
155
Equivalent circuit
2SD2560
100max
IEBO
VEB=5V
100max
A
V
V(BR)CEO
hFE
IB
PC
130(Tc=25C)
150min
5000min
VCE(sat)
IC=10A, IB=10mA
2.5max
VBE(sat)
IC=10A, IB=10mA
3.0max
150
fT
VCE=12V, IE=2A
70typ
MHz
55to+150
COB
VCB=10V, f=1MHz
120typ
pF
Tj
Tstg
19.90.3
IC=30mA
VCE=4V, IC=10A
3.20.1
2
3
1.05 +0.2
-0.1

5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
10
10
0.8typ
4.0typ
1.2typ
I B =0.3mA
I C =.10A
1
I C =.5A
0
0.2
0.5
10
50

(V C E =4V)
50000
Typ
10000
5000
1000
12
5C
50000
10000
25
5000
0C
1000
1
10
500
02
15
0.5
10
15
1.0
0.5
0.1
10
P c T a Derating
0m
ite
he
at
si
nk
Without Heatsink
Natural Cooling
fin
1
0.5
In
100
ith
10
DC
Maxim um Power Dissipa tion P C (W)
10
20
50
0.1
0.5
156
10
1000 2000
130
10
40
100
Time t(ms)
50
60
2.2
3.0
80
(V C E =12V)
0
0.02 0.05 01
100 200
(V C E =4V)
0.5
500
02
emp
I C =.15A
10
(Cas
0.5mA
eT
0. 8m A
10
Cas
1. 0m A
25C
mA
125
1.5
(V CE =4V)
15
2m
j- a ( C/W)
50mA
3mA
1.4

a. Part No.
b. Lot No.

10mA
C (
15
5.450.1
B
VCC
(V)
0.65 +0.2
-0.1
mp)
15
e Te
IC
mp)
VEBO
2.00.1
(Cas
150
4.80.2
30C
VCEO
15.60.4
9.6
e Te
1.8
VCB=150V
150
2.0
Unit
ICBO
VCBO
Symbol
0.05
10
(Ta=25C)
Ratings
Unit
5.00.2
Conditions
Ratings
4.0
Symbol
4.0max
(7 0 )
20.0min
Darlington
50
100
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Equivalent circuit
2SD2561
ICBO
Unit
VCB=150V
100max
24.40.2
100max
150min
VCE=4V, IC=10A
5000min
IC=10A, IB=10mA
2.5max
IC=10A, IB=10mA
3.0max
fT
VCE=12V, IE=2A
70typ
MHz
COB
VCB=10V, f=1MHz
120typ
pF
hFE
VCE(sat)
PC
200(Tc=25C)
VBE(sat)
Tj
150
55 to +150
17
IB
a
b
2
3
5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
10
10
0.8typ
4.0typ
1.2typ
I B =0.3mA
I C =.10A
1
I C =.5A
0
0.2
0.5
10
50

(V C E =4V)
50000
10000
5000
1000
12
5C
50000
Typ
10000
25
5000
30
1000
1
10
500
02
17
0.5
10
17
0.5
0.1
10
200
120
ite
he
at
si
nk
Without Heatsink
Natural Cooling
fin
1
0.5
In
160
ith
0m
DC
10
10
10
20
1000 2000
P c T a Derating
50
40
100
Time t(ms)
60
2.6
(V C E =12V)
80
Cut-o ff Fr equ ency f T ( MH Z )
100 200
(V C E =4V)
0.5
500
02
10
p)
I C =.15A
Tem
0.5mA
se
10
(Ca
0. 8m A
15
125
1. 0m A
(V C E =4V)
17
1 .5 m A
mA
j- a ( C/W)
15
3m
50mA
17

a. Part No.
b. Lot No.
10mA
3.0 +0.3
-0.1
5.450.1
B
VCC
(V)
0.65 +0.2
-0.1
1.05 +0.2
-0.1
mp)
IC
2-3.20.1
e Te
V(BR)CEO
(Cas
IEBO
2.1
30C
6.00.2
36.40.3
VEB=5V
150
VEBO
Tstg
Ratings
IC=30mA
VCEO
(Ta=25C)
Conditions
mp)
Symbol
e Te
150
VCBO
(Cas
Unit
25C
Ratings
21.40.3
Symbol
4.0max
(7 0 )
20.0min
Darlington
80
40
0.1
0
0.02
0.1
1
10
0.05
10
50
100
200
5
0
Without Heatsink
0
25
50
75
100
125
150
157
Equivalent circuit
2SD2562
100max
IEBO
VEB=5V
100max
A
V
150min
5000min
VCE(sat)
IC=10A, IB=10mA
2.5max
PC
85(Tc=25C)
VBE(sat)
IC=10A, IB=10mA
3.0max
Tj
150
fT
VCE=12V, IE=2A
70typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
120typ
pF
5.450.1

RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
40
10
10
10
10
0.8typ
4.0typ
1.2typ
I B =0.3mA
I C =.15A
I C =.10A
1
I C =.5A
0
0.2
0.5
10
50

(V C E =4V)
50000
Typ
10000
5000
1000
12
5C
50000
100 200
10000
25
5000
30
1000
1
10
500
02
15
0.5
2.2
10
15
3.0
1.0
0.5
0.1
10
100
(V C E =4V)
0.5
500
02
10
emp
0.5mA
(V CE =4V)
15
eT
0. 8m A
10
Cas
1. 0m A
C (
1.5
mA
3.35

a. Part No.
b. Lot No.
125
2m
0.65 +0.2
-0.1
1.5
j- a (C /W )
50mA
15
3mA
4.4
10mA
+0.2
-0.1
5.450.1
1.5
VCC
(V)
0.8
2.15
1.05
1.75
mp)
Tstg
3.30.2
a
b
IB
3.0
IC=30mA
VCE=4V, IC=10A
mp)
hFE
e Te
V(BR)CEO
(Cas
15
30C
IC
3.3
VEBO
3.45 0.2
e Te
150
5.50.2
(Cas
VCEO
15.60.2
25C
0.80.2
VCB=150V
150
5.5
ICBO
VCBO
1.6
Unit
Symbol
(Ta=25C)
Ratings
Unit
9.50.2
Conditions
Ratings
Symbol
23.00.3
(7 0 )
16.2
Darlington
1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
80
100
50
ite
he
at
si
nk
Without Heatsink
Natural Cooling
60
fin
1
0.5
In
80
ith
Collecto r Cur ren t I C ( A)
Cut-o ff Fr eque ncy f T (MH Z )
20
0m
40
DC
10
10
10
60
40
20
0.1
0
0.02 0.05 01
0.5
158
10
0.05
10
50
100
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
2SD2589
VCB=110V
100max
IEBO
VEB=5V
100max
V(BR)CEO
IC=30mA
110min
hFE
VCE=4V, IC=5A
5000min
IB
VCE(sat)
IC=5A, IB=5mA
2.5max
PC
50(Tc=25C)
VBE(sat)
IC=5A, IB=5mA
3.0max
Tj
150
fT
VCE=12V, IE=0.5A
60typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
110
VCEO
110
VEBO
IC
Tstg
10.20.2
pF
55typ
2.00.1
3.750.2
a
b
1.35
0.65 +0.2
-0.1

2.5
2.5
1.4
B C E
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
0.8typ
6.2typ
1.1typ
4.80.2
3.00.2
ICBO
VCBO
16.00.7
Unit
Symbol
External Dimensions FM-25(TO220)
(Ta=25C)
Ratings
Unit
8.80.2
Conditions
Ratings
Symbol
4.0max
12.0min
Darlington

a. Part No.
b. Lot No.
I B =0.1mA
I C =3A
0.1
0.5
10
50
(VCE=4V)
10000
5000
1000
500
5 6
10000
12
5000
Typ
5C
25
0C
1000
500
100
0.02
0.1
0.5
)
Temp
mp)
2.5
56
0.5
0.4
10
100
1000 2000
Time t(ms)
P c T a Derating
(VCE=12V)
50
80
60
at
si
nk
he
30
ite
0.1
fin
0
0.02
In
20
ith
40
40
W
M aximu m Power Dissipa tion P C ( W)
Typ

40000
0.5
(VCE=4V)
40000
0.1
100
200
0.02
(Case
30C
I C =5A
Temp
0.2mA
e Te
(Case
0.3 mA
(VCE=4V)
25C
0. 4m A
(Cas
125C
5m
0.
j - a ( C/W)
5mA
1m
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
159
Equivalent circuit
2SD2641
Unit
ICBO
VCB=110V
100max
VCEO
110
IEBO
VEB=5V
100max
VEBO
IC
V(BR)CEO
IC=30mA
110min
hFE
VCE=4V, IC=5A
5000min
IB
VCE(sat)
IC=5A, IB=5mA
2.5max
PC
60(Tc=25C)
VBE(sat)
IC=5A, IB=5mA
3.0max
Tj
150
fT
VCE=12V, IE=2A
60typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
55typ
pF
Tstg
15.60.4
9.6
1.8
Ratings
4.80.2
5.00.2
110
(Ta=25C)
Conditions
Symbol
2.0
VCBO
4.0
Unit
19.90.3
Ratings
Symbol
2.00.1
3.20.1
4.0max
(7 0 )
20.0min
Darlington
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.450.1

VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
0.8typ
6.2typ
1.1typ
1.4

a. Part No.
b. Lot No.
I B =0.1mA
I C =3A
0.1
0.5
10
50

(V C E =4V)
Typ
1000
500
0.5
125C
50000
5000
10000
25C
5000
30C
1000
500
100
0.01
56
0.1
p)
em
eT
as
(C
)
Temp
0.5
2.5
5
0.5
1
56
10
50 100
500 1000 2000
Time t(ms)
P c T a Derating
(V C E =12V)
80
60
20
Typ
nk
160
si
at
0.1
he
0
0.02
ite
0.1
fin
Without Heatsink
Natural Cooling
40
In
0.5
ith
0m
20
10
40
60
10
10
50000
0.1
(V C E =4V)
100
0.01
100
10000
(Case
30C
I C =5A
0.2mA
Temp
5C
0.3 mA
(V CE =4V)
12
0. 4m A
(Case
25C
5m
0.
j - a (C /W)
5mA
1m
5.450.1
B
20
Without Heatsink
0.05
3
10
50
100
200
3.5
0
25
50
75
100
125
150
Equivalent circuit
2SD2642
V
VCEO
110
VEBO
.V(BR)CEO
IC
ICBO
Unit
VCB=110V
100max
100max
110min
hFE
VCE=4V, IC=5A
5000min
IC=5A, IB=5mA
2.5max
16.90.3
VEB=5V
IC=30mA
IEBO
10.10.2
PC
30(Tc=25C)
VBE(sat)
IC=5A, IB=5mA
3.0max
Tj
150
fT
VCE=12V, IE=0.5A
60typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
55typ
pF
Tstg
3.9
VCE(sat)
1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.40.2
2.20.2
VCC
(V)
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
0.8typ
6.2typ
1.1typ

a. Part No.
b. Lot No.
B C E
I B =0.1mA
I C =3A
0.5
0.1
10
50

(V C E =4V)
Typ
1000
500
0.5
125C
50000
5000
10000
25C
5000
30C
1000
500
100
0.01
56
0.1
p)
em
eT
as
(C
)
)
Temp
0.5
2.5
4
0.5
0.3
56
10
50
100
500 1000
Time t(ms)
P c T a Derating
(V C E =12V)
30
30
80
10
he
at
si
nk
Without Heatsink
Natural Cooling
ite
1
0.5
20
fin
20
DC
10
m
s
0m
s
In
40
10
ith
60
Typ
50000
0.1
(V C E =4V)
100
0.01
100
10000
(Case
30C
I C =5A
Temp
0.2mA
5C
12
0.3 mA
(V CE =4V)
(Case
0. 4m A
25C
mA
5
0.
j - a (C /W)
5mA
1m
3.30.2
a
b
IB
4.20.2
2.8 c0.5
4.00.2
110
Ratings
0.80.2
VCBO
(Ta=25C)
Conditions
0.2
Symbol
Unit
8.40.2
Ratings
Symbol

(7 0 )
13.0min
Darlington
10
0.1
Without Heatsink
2
0
0.02
0.1
0.05
3
10
50
100
200
25
50
75
100
125
150
161
Equivalent circuit
2SD2643
110
ICBO
VCEO
110
IEBO
VEBO
V(BR)CEO
IC
(Ta=25C)
Conditions
Ratings
Unit
VCB=110V
100max
VEB=5V
100max
IC=30mA
110min
hFE
VCE=4V, IC=5A
5000min
15.60.2
VCE(sat)
IC=5A, IB=5mA
2.5max
60(Tc=25C)
VBE(sat)
IC=5A, IB=5mA
3.0max
Tj
150
fT
VCE=12V, IE=0.5A
60typ
MHz
55 to +150
COB
VCB=10V, f=1MHz
55typ
pF
RL
()
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(s)
tstg
(s)
tf
(s)
30
10
0.8typ
6.2typ
1.1typ
3.3
0.8
2.15
5.450.1
0.65 +0.2
-0.1
5.450.1
1.5
4.4
3.35
1.5

a. Part No.
b. Lot No.
I B =0.1mA
I C =3A
0.1
0.5
10
50
(V C E =4V)
Typ
5000
1000
500
125C
50000
0.5
p)
em
eT
as
(C
10000
25C
5000
30C
1000
500
100
0.01
56
)
Temp
0.1
0.5
2.5
0.5
1
56
10
50 100
500 1000 2000
Time t(ms)
50000
0.1
(V C E =4V)
100
0.01
100
10000
(Case
I C =5A
30C
0.2mA
Temp
5C
0.3 mA
(V CE =4V)
12
0. 4m A
(Case
25C
5m
0.
j - a (C /W)
5mA
1m
1.75
1.05 +0.2
-0.1

VCC
(V)
3.45 0.2
3.0
PC
5.50.2
3.30.2
a
b
IB
Tstg

0.80.2
VCBO
Symbol
5.5
Unit
1.6
Ratings
9.50.2
Symbol
23.00.3
(7 0 )
16.2
Darlington
P c T a Derating
(V C E =12V)
80
si
nk
at
162
he
ite
0.1
fin
0.1
0
0.02
40
In
Without Heatsink
Natural Cooling
ith
1
0.5
0m
20
10
40
60
10
10
Cut- off F req uenc y f T (M H Z )
60
20
Typ
20
Without Heatsink
0.05
3
10
50
100
200
3.5
0
25
50
75
100
125
150
Equivalent circuit
SAH02
Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode
IEBO
VEB=10V
10max
V(BR)CEO
IC=10mA
30min
ICBO
VCEO
30
VEBO
10
IC
hFE1
VCE=2V, IC=1A
100min
IB
0.5
hFE2
VCE=2V, IC=0.5A
150min
PC
800(Ta=25C)
mW
VCE(sat)
IC=0.5A, IB=20mA
0.3max
125
fT
VCE=12V, IE=0.3A
100typ
40 to +125
COB
VCB=10V, f=1MHz
45typ
pF
VR
IR=100A
VF
IF=0.5A
trr
IF=100mA
V
V
1.40.2
3.60.2
6.8max
4.0max
6.30.2
0~0.1
1.00.3

a. Part No.
b. Lot No.
3.00.2
9.80.3
100mA
30 min
0.55 max
0.25
Tstg
8.00.5
MHz
Tj
4.320.2
Unit
10max
4.8max
Ratings
VCB=30V
Unit
30
2.540.25
Conditions
Ratings
VCBO
Symbol
External Dimensions PS Pack
(Ta=25C)
0.3 +0.15
-0.05
0.890.15
Symbol
15 typ
ns
Di ode I F V F Characteristics
20mA
Application : Chopper Regulator
0.75 +0.15
-0.05
(V C E =2V)
0.5
0.8
t stg
t on
tf
0.2
0
0.1
0.5
125C
500
25C
30C
100
0.01
0.05
0.1
0.5
(I C =0.5A)
(Case
Temp
mp)
30C
1.5
100
10
1
0.3
0.001
0.01
0.1
10
100
1000
Time t(ms)
V CE (sat) I B Temperature Characteristics (Typical)
1.0
300
1.5
V C C 12V
I B 1 =I B2 =30mA
0.4
0.5

1000
1.0
0.6
(V C E =2V)
P c T a Derating
1.0
25C
1.0
125C
0.5
10
10
50
100
300
0.5
0.1
0.05
0
1
100s
1m
30C
1.0
Forward Voltage V F (V)
Swit ching Time
emp
C (
125
25
j- a (C /W)
12
Collecto r-Emitte r Satu ration Voltage V C E( s a t ) ( V)
Cas
eT
I B =3mA
e Te
5m A
(Cas
5m A
25C
1 0m A
Forward Current I F (A)
15mA
0.03
3
Without Heatsink
Natural Cooling
10
50
0.5
Glass epoxy substrate

(95 x 69 x 1.2mm)
Natural Cooling
0
25
50
75
100
125
163
Equivalent
circuit
2
(4k)
SAH03
Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode
Ratings
Unit
VCBO
60
ICBO
VCEO
60
IEBO
VEBO
V(BR)CEO
IC
1.2
hFE
VCE=4V, IC=1A
IB
0.1
VCE(sat)
IC=1A, IB=2mA
1.4max
PC
1.0(Ta=25C)
fT
VCE=12V, IE=0.1A
100typ
MHz
8.00.5
Tj
150
COB
VCB=10V, f=1MHz
30typ
pF
6.30.2
40to+150
VR
IR=100A
100 min
VF
IF=0.5A
1.5 max
trr
IF=100mA
100 typ
ns
3max
mA
0.890.15
60min
2000 to 12000
1.40.2
0.75 +0.15
-0.05
VEB=6V
IC=10mA
4.320.2
Unit
10max
2.540.25
Ratings
VCB=60V
3.60.2
6.8max
4.0max
0.3 +0.15
-0.05
Tstg
Conditions
0.25
Symbol
0~0.1
1.00.3

a. Part No.
b. Lot No.
3.00.2
9.80.3
125
tf
12
1000
0.5
t on
5000
5C
C
25
500
0
3
100
1
50
0.02
2.4
V CE (sat) I B Temperature Characteristics (Typical)
0.1
0.5
2.4
1
0.3
0.001
0.01
0.1
10
100
1000
Time t(ms)
P c T a Derating
1.5
3
10
125C
mp)
10
(I C =0.5A)
30C
ms
25C
2
1m
10
Collecto r-Emitte r Satu ration Vo lt age V C E( s a t ) ( V)
0.05
100
300
Switching T im e
V C C 30V
I B 1 =I B 2 =2mA

10000
0.5
(V C E =4V)
0.1
0.2
1.6
Forward Voltage V F (V)
t stg
)
C (
Cas
0.01
j- a ( C/W)
1 0 C
2 5 C
125
e Te
0.05
I B =0.3m A
mp)
0.1
(Cas
0 .4m A
emp
eT
0 .5 m
0.5
(V CE =4V)
e Te
2.4
0 .6 m
Forward Current I F (A)
0 .8 m A
1.2
1
30C
1 .0 m A
(Cas
2.4
Di od e I F V F Characteristics
1.2mA
5.0mA
10.0mA
2.0mA
25C
External Dimensions PS Pack
(Ta=25C)
4.8max
Symbol
(100)
Application : Voltage change switch for motor
0.5
Without Heatsink
Natural Cooling
0.1
0
0.1
0.5
164
0.05
1
10
50
100
1.0
0.5
Glass epoxy substrate

(95 x 69 x 1.2mm)
Natural Cooling
0
25
50
75
100
125
150
Equivalent
circuit
SAP09N
Application: Audio
IC
10
IB
PC
80 ( Tc = 25C)
10
mA
150
40 to +150
Di IF
Tj
Tstg
typ
Unit
max
100
100
IEBO
VEB = 5V
VCEO
IC =30mA
150
hFE
VCE =4V, IC =6A
5000
VCE (sat)
IC =6A, IB =6mA
2.0
VBE (sat)
IC =6A, IB =6mA
2.5
(36)
V
20000
a
b
VBE
VCE =20V, IC =40mA
1220
mV
IF =2.5mA
705
mV
Di VF
IE =1A
RE
0.176
0.22
IC VCE Characteristics (Typical)
3.810.1
2.540.1
(12.7)
1.0m
1.8mA
0.8m
Collector Current IC (A)
0.5mA
6
0.3mA
4
IB = 0.2mA
2
2
IC =8A
6A
4A
1
0
0.3 0.5
j-a (C/W)
25C
30C
1000
500
200
0.03
0.1
0.5
125C
25C
10
50
100
30C
Base-Emitter Voltage VBE (V)
Characteristics
0.5
0.1
1
10
10
50
100
500 1000 2000
Time t (ms)
PC Ta Derating
30
10
m
0m s
s
10
D.
ite
fin
at
he
40
k
sin
Without Heatsink
Natural Cooling
In
0.5
ith
60
W
Maximum Power Dissipation Pc (W)
80
10
DC Current Gain hFE
j-a t
125C
5000
Base Current IB (mA)
hFE IC Characteristics (Typical)
10000
(VCE = 4V)
(VCE =4V)
50000
S E
10
1.3mA
Weight: Approx 8.3g

a. Part No.
b. Lot No.
IC VBE Temperature Characteristics
Collector-Emitter Saturation Voltage VCE(sat) (V)
mA
1.5
+0.2
0.65 0.1
3.810.1
(7.62)
17.80.3
40.1
VCE(sat) IB Characteristics (Typical)
10.1
+0.2
0.8 0.1
2.540.1
0.264
+0.2
0.65 0.1
B D
10mA
2.5mA
2.0mA
4.50.2
1.60.2
+0.2
1.35 0.1
hFE Rank O (5000 to 12000), Y (8000 to 20000)
10
3.20.2
15.40.3
9.90.2
20.1
min
VCB =150V
(41)
150
Conditions
ICBO
50.2
VCEO
VEBO
Symbol
(Unit: mm)
(18)
External Dimensions
70.2
220.3
230.3
280.3
150
( Ta = 25C )
Ratings
3.30.2
VCBO
(2.5)
Unit
3.4max

Ratings
S
Emitter resistor
RE: 0.22 Typ.
R: 70 Typ.
(Complement to type SAP09P)
Symbol
20
0.1
0.05
10
50
100
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta (C)
165
Equivalent
circuit
SAP09P
B
C
Application: Audio
IC
10
IB
PC
80 ( Tc=25C)
10
mA
150
40 to +150
Tj
Tstg
typ
Unit
max
100
100
IEBO
VEB = 5V
VCEO
IC = 30mA
150
hFE
VCE = 4V, IC = 6A
5000
VCE (sat)
IC = 6A, IB = 6mA
2.0
VBE (sat)
IC = 6A, IB = 6mA
2.5
(36)
V
20000
a
b
VCE = 20V, IC = 40mA
1230
mV
IF = 2.5mA
1580
mV
Di VF
IE =1A
RE
0.176
0.22
2.540.1
0.8mA
10m
1.5mA
1.8mA
0.5mA
0.3mA
4
IB = 0.2mA
2
2
IC = 8A
6A
4A
1
j-a (C/W)
DC Current Gain hFE
30C
5000
1000
500
200
0.03
0.1
0.5
0
0.3
50
100
0.5
0.1
1
10
50
100
500 1000 2000
Time t (ms)
PC Ta Derating

80
10
D.
s
at
40
in
Without Heatsink
Natural Cooling
he
0.5
ite
60
fin
In
ith
10
m
s
0m
s
10
30
20
0.1
0.05
3
10
50
100
166
200
3.5
0
4
125C
25C
Without Heatsink
0
25
50
75
100
Characteristics
10
10
(VCE = 4V)
30C
j-a t
25C
10000
IC VBE Temperature Characteristics (Typical)
125C
D B

50000
10
(VCE = 4V )
Weight: Approx 8.3g

a. Part No.
b. Lot No.
40.1
+0.2
0.65 0.1
3.810.1
(12.7)
1.0mA
(18)
2.540.1
(7.62)
17.80.3

mA
3
1.
10.1
+0.2
0.8 0.1
3.810.1
0.264
+0.2
(2.5)
VBE
0.65 0.1
E S
2.0mA
2.5mA
4.50.2
1.60.2
+0.2
1.35 0.1
hFE Rank O (5000 to 12000), Y (8000 to 20000)
10
3.20.2
15.40.3
9.9 0.2
20.1
min
(41)
VCE = 150V
50.2
150
VEBO
Conditions
ICBO
280.3
VCEO
Symbol
70.2
(Unit: mm)
230.3
150
External Dimensions
220.3
VCBO
( Ta = 25C )
Ratings
3.30.2
Unit
3.4max
Ratings
Di IF
(Ta=25C)
Symbol
Emitter resistor
RE: 0.22 Typ.
S
R: 70 Typ.
(Complement to type SAP09N)
125
150
Equivalent
circuit
SAP10N
Application: Audio
12
IC
IB
PC
10
mA
Di IF
150
40 to +150
Tj
Tstg
A
W
IEBO
VEB =5V
VCEO
IC = 30mA
150
hFE
VCE = 4V, IC =7A
5000
VCE (sat)
IC =7A, IB =7mA
VBE (sat)
100
100
2.0
2.5
1200
mV
IF =2.5mA
705
mV
Di VF
IE = 1A
RE
0.176
0.22
a
b
+0.2
0.65 0.1
2.540.1
(7.62)
(12.7)
1.0mA
0.8mA
0.6mA
0.4mA
4
IB =0.2mA
IC =10A
7A
1
5A
0
0.4
j-a t
j-a (C/W)
25C
30C
5000
1000
0.3
0.5
125C
25C
50
100
200
30C
2.5
Characteristics
0.5
0.1
1
10 12
10
50
100
500 1000 2000
Time t (ms)
PC Ta Derating

100
10
10
10
0m
ite
k
sin
at
he
Without Heatsink
Natural Cooling
60
fin
0.5
In
80
ith
W
D.
30
DC Current Gain hFE
125C
10000
10

40000
(VCE =4V)
(VCE =4V)
10
S E
12
1.2m
m
1.5
Weight: Approx 8.3g

a. Part No.
b. Lot No.

3
2.5mA
2.0m
10mA
+0.2
0.65 0.1
3.810.1
17.80.3
40.1
B D
12
10.1
+0.2
2.540.1
3.810.1
hFE Rank O (5000 to 12000), Y (8000 to 20000)
4.50.2
1.60.2
0.8 0.1
0.264
3.20.2
+0.2
1.35 0.1
VCE =20V, IC =40mA
15.40.3
9.90.2
(36)
V
20000
IC =7A, IB =7mA
VBE
Unit
max
VCB =150V
ICBO
100( Tc=25C)
typ
20.1
min
(41)
150
Conditions
50.2
VCEO
VEBO
Symbol
(Unit: mm)
(18)
External Dimensions
70.2
220.3
0.3
23
280.3
150
( Ta = 25C )
Ratings
3.30.2
VCBO
3.4max
Unit
(2.5)

Ratings
S
Emitter resistor
RE: 0.22 Typ.
R: 70 Typ.
Symbol
40
20
0.1
0.05
10
50
100
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
167
Equivalent
circuit
SAP10P
B
C
Application: Audio
150
IC
12
IB
100 ( Tc = 25C)
10
mA
150
40 to +150
Tj
Tstg
VCB =150V
min
typ
Unit
max
100
100
IEBO
VEB = 5V
VCEO
IC =30mA
150
hFE
VCE =4V, IC = 7A
5000
VCE (sat)
IC =7A, IB =7mA
2.0
VBE (sat)
IC =7A, IB =7mA
2.5
15.40.3
9.90.2
(36)
V
20000
a
b
VBE
1210
mV
IF =2.5mA
1540
mV
Di VF
IE = 1A
RE
0.176
0.22
1.0mA
0.6mA
0.4mA
4
IB =0.2mA
IC =10A
7A
1
5A
0
0.4
j-a (C/W)
DC Current Gain hFE
j-a t
25C
5000
30C
1000
0.3
0.5
50
100 200
0.5
0.1
1
10
50
100
500 1000 2000
Time t (ms)
PC Ta Derating
100
10
10
10
0m
60
ite
in
k
in
s
at
he
Without Heatsink
Natural Cooling
f
In
0.5
ith
80
W
D.
30
40
20
0.1
0.05
3
10
50
100
168
200
3.5
0
6
125C
4
25C
30C
Without Heatsink
0
25
50
75
100
Characteristics
10
10 12
10000
(VCE = 4V)
12
125C
D B
10
40000
Weight: Approx 8.3g

a. Part No.
b. Lot No.
(VCE = 4V)
+0.2
0.65 0.1
3.810.1
(12.7)
A
m
.0
2
1.2m
5m
1.
(18)
2.540.1
(7.62)
17.80.3
40.1
0.8mA
10.1
+0.2
0.8 0.1
2.540.1
3.810.1
0.264
+0.2
0.65 0.1
E S
10mA
2.5mA
4.50.2
1.60.2
+0.2
hFE Rank O (5000 to 12000), Y (8000 to 20000)
12
3.20.2
1.35 0.1
(2.5)
PC
Di IF
Conditions
ICBO
20.1
VCEO
VEBO
Symbol
(Unit: mm)
(41)
External Dimensions
50.2
150
( Ta = 25C )
Ratings
70.2
220.3
0.3
23
280.3
VCBO
3.30.2
Unit
3.4max

Ratings
Emitter resistor
RE: 0.22 Typ.
R: 70 Typ.
Symbol
125
150
2.5
Equivalent
circuit
SAP16N
IC
15
IB
150( Tc = 25C)
10
mA
150
40 to +150
Tj
Tstg
Unit
max
100
100
IEBO
VEB = 5V
VCEO
IC = 30mA
160
hFE
VCE = 4V, IC = 10A
5000
VCE (sat)
IC = 10A, IB = 10mA
2.0
VBE (sat)
IC = 10A, IB = 10mA
2.5
3.20.2
15.40.3
9.90.2
(36)
V
20000
4.50.2
1.60.2
a
b
+0.2
VBE
1190
mV
IF = 2.5mA
705
mV
Di VF
IE = 1A
RE
0.176
0.22
0.264
90
100
110
REB
1.35 0.1
+0.2
0.65 0.1
+0.2
0.8 0.1
2.540.1
2.540.1
3.810.1
+0.2
0.65 0.1
3.810.1
(7.62)
(12.7)
17.80.3
40.1
Weight: Approx 8.3g

a. Part No.
b. Lot No.
hFE Rank O (5000 to 12000), Y (8000 to 20000)

B D
2.
5.0mA
1.2mA
3.0mA
1.0mA
0.8mA
10
0.5mA
5
IB =0.3mA
IC =15A
10A
1
5A
0
0.4
30C
1000
0.3
0.5
10
50
100
200
10
2.5
0.1
1
15
10
50
100
500 1000 2000
Time t (ms)
PC Ta Derating
Di IF VF Characteristics (Typical)
150
10
in
ts
a
he
Without Heatsink
Natural Cooling
100
ite
fin
1
0.5
In
Forward Current IF (mA)
ith
W
10
D.
0.5
40
0m
10
25C
Characteristics
10
125C
j-a (C/W)
25C
5000
DC Current Gain hFE
j-a t
125C
10000
10

40000
(VCE =4V)
30C
(VCE =4V)
S E
15
1.5m
0m

15
50mA
10.1
(18)
Di IF
typ
(2.5)
PC
min
VCB =160V
20.1
160
Conditions
ICBO
(41)
VCEO
VEBO
Symbol
(Unit: mm)
50.2
External Dimensions
70.2
220.3
0.3
23
280.3
160
( Ta = 25C )
Ratings
3.30.2
VCBO
3.4max
Unit
S
Emitter resistor
RE: 0.22 Typ.
Application: Audio

Ratings
R: 100 Typ.
Symbol
50
0.1
0.05
10
50
100
200
0.5
1.0
1.5
Forward Voltage VF ( V )
2.0
3.5
0
Without Heatsink
0
25
50
75
100
125
150
169
Equivalent
circuit
Application: Audio
160
IC
15
IB
150 ( Tc=25C)
10
mA
IEBO
VEB = 5V
VCEO
IC = 30mA
160
hFE
VCE = 4V, IC=10A
5000
typ
max
Unit
100
100
(36)
V
20000
VCE (sat)
IC = 10A, IB =10mA
2.0
VBE (sat)
IC = 10A, IB = 10mA
2.5
3.20.2
15.40.3
9.90.2
4.50.2
1.60.2
a
b
150
C
C
VBE
1200
mV
IF = 2.5mA
1540
mV
Di VF
IE = 1A
RE
0.176
0.22
0.264
90
100
110
REB
1.35 0.1
+0.2
0.65 0.1
+0.2
0.8 0.1
2.540.1
2.540.1
3.810.1
+0.2
0.65 0.1
3.810.1
(7.62)
(12.7)
17.80.3
40.1
Weight: Approx 8.3g

a. Part No.
b. Lot No.
hFE Rank O (5000 to 12000), Y (8000 to 20000)

E S
1.2m
1.0mA
0.8mA
10
0.5mA
5
IB = 0.3mA
2
IC = 15A
10A
1
5A
0
0.4
25C
30C
5000
1000
0.3
0.5
50
100 200
10
2.5
0.1
1
15
10
50
100
500 1000 2000
Time t (ms)
PC Ta Derating
Di IF VF Characteristics (Typical)
150
ite
fin
k
sin
at
he
Without Heatsink
Natural Cooling
100
In
1
0.5
ith
Forward Current IF (mA)
10
s
D.
10
0m
0.5
40
10
10
25C
Characteristics
10
125C
j-a (C/W)
DC Current Gain hFE
j-a t
125C
10000
10

40000
(VCE =4V)
30C
(VCE = 4V)
D B
15
1.5m
m
2.0

50mA
5.
0m
A
3
.0m
A
15
10.1
+0.2
40 to +150
Tj
Tstg
min
(18)
Di IF
VCB = 160V
(2.5)
PC
Conditions
ICBO
20.1
VCEO
VEBO
Symbol
(Unit: mm)
(41)
External Dimensions
50.2
160
( Ta = 25C )
Ratings
70.2
220.3
0.3
23
280.3
VCBO
3.30.2
Unit
3.4max

Ratings
Emitter resistor
RE: 0.22 Typ.
S
Symbol
R: 100 Typ.
SAP16P
50
0.1
0.05
3
10
50
100
170
200
1
0
0.5
1.0
1.5
Forward Voltage VF ( V )
2.0
3.5
0
Without Heatsink
0
25
50
75
100
125
150
SAP Series
Application Information
1. Recommended Operating Conditions
Add a variable resistor (VR) between diode terminals to adjust the idling current. The
resistor having 0 to 200 is to be used.
Adjust the forward current flowing over the diodes at 2.5mA.
Adjust the idling current at 40mA with the external variable resistor.
Both the temperature coefficients for the transistor and the diodes are matched under the above conditions.
Both the PNP and the NPN are Darlington transistors, so the temperature change ratio of the total four VBE
of the transistors is subject to the compensation. One PN junction diode in the NPN and five Schottky
barrier diodes in the PNP are built-in, and the total six diodes are operating as the temperature compensation.
The temperature coefficient of the total diodes (its variable value) becomes smaller with a larger forward
current (approximately 0.2mV/ to 1mA), and the coefficient of the total transistors (its variable value)
also becomes smaller with a larger idling current (approximately 0.1mV/ to 10mA), but the both variable
values are small.
Thus, the distortion of the temperature coefficient caused by the different current is small, so the thermal
runaway may not be occurred due to the changes of the recommended ratings; however, the actual operation
is to be confirmed by using an experimental equipment or board.
+VCC
NPN
D
2.5mA
40mA
E
D
External variable
resistor (VR)
(0 to 200)
PNP
C
VCC
171
2. External Variable Resistor

Total forward voltage (at IF =2.5mA) of the diodes is designed to be equal or less than that of total VBE (at IC
= 40mA) of the transistor, thus the idling current is required to be adjusted at 40mA with an additional
external variable resistor.
The relations are shown as below:
Total VF of Diode
V=0 to 500mV
Total VBE of Transistor + Total VRE of Emitter Resistor
The VBE of the transistor is dependent to the hFE, and the VBE is lower with higher hFE and vice versa. The
hFE for both the PNP and the NPN varies between 5k and 20k; thus the VBE is the lowest with the
combination of maximum hFE (20k) each and it is the highest with the combination of minimum hFE (5k)
each.
Presuming the voltage difference between the VF of the diodes and the VBE of the transistors (including the
total voltage drops of the two emitter resistors) as V.
Minimum VBE Maximum VF variations of the diodes = 0
Maximum VBE Minimum VF variations of the diodes = 500mV
The current flowing over the diodes and the VR is adjusted at 2.5mA; therefore
500mV
2.5mA = 200
Consequently, the applicable VR value is to be 0 to 200
VBE Min.
(P and N: hFE Max.)
VBE Max.
(P and N: hFE Min.)
IC
40mA
Di VF
Variations
VBE
TR VBE
Variations
VF =500mV
172
3. Characteristics of the temperature compensation diodes

The several temperature compensation diodes are connected in series, so the forward voltage is varied with
small current fluctuations. Therefore, in case the forward current flowing over the diodes is set at 2.5mA and
over, the forward voltage rises, and in the worst combinations, the idling current reaches to 40mA and over
with minimum VR of 0. On the contrary, in case the forward current is set at 2.5mA or below, the idling
current may not reach to 40mA with maximum VR of 200.
10.0
Ta=25C
PN-Di
SBD
(5 diodes Total)
PNDi+SBD
IF (mA)
5.0
1.0
0
500
1000
1500
2000
2500
3000
VF (mV)
IF VF Characteristics
4. Parallel push-pull application

Adjustments of the idling current are required by each the resistor in parallel push-pull applications. One
side adjustment will cause the idling current to be unstable (seesaw operation) because of the different hFE.
To be adjusted individually
173
5. Destruction capacity of the built-in emitter resistor

A thick-film resistor is used for the built-in resistor. The thick-film resistor has weaker destruction point in
the Pc area (especially for large current flowing area) than that of the transistor chip itself. There is less
concern, however, as this is subject to the area beyond an Are of Safe Operation (A.S.O.).
However, under the evaluation like a short circuit test in which the current exceeds the guaranteed value, it
may cause the emitter resistor to be destroyed before the transistor itself is destroyed.
Consequently, the current value (or time) that operates the protection circuit is to be set at lower than that of
discrete device configurations. In the application of car audio amplifiers, the same manners as the above
need to be considered because the large current is flowed at low impedance.
In addition, once the transistor falls into thermal runaway due to a soldering failure to the external VR added
between diodes or other failure manners, as the worst case, there may cause a resin crack or smoke emissions
by flare up. Flame retardant molding resin is used, and the material of the product is conformed to the most
sever standard UL94V0. However it is recommended that the careful consideration be given to a protection
circuit, and the protection circuits should be provided appropriately in due course.
If the operating conditions are not to be matched to the ratings, it is also recommended that the E (Emitter
resistor) terminal should be opened and the external emitter resistor should be added to the S (Sensing)
terminal shown as below.
IC
Transistor destruction point
Thick-film resistor
destruction point
B
A.S.O.
Curve
S
D
External
emitter resistor
E
Output terminal
VCE
174
MEMO
175
Discontinued Parts Guide

Discontinued Parts
Replace ment Parts
Discontinued Parts
Replacement Parts
Discontinued Parts
Replacement Parts
2SD219to221
2SC3179,3851,3851A
2SD219Fto221F
2SC3179,3851,3851A
2SD222to224
2SC3179,3851,3851A
2SD236to238
2SC3179,3851,3851A
2SC1888to1889
2SC3852,3852A
2SD241to244
2SC3179,3851,3851A
2SA744to745
2SA1694to1695
2SC1829
2SA746to747
2SA1695
2SC1830
2SA764to765
2SA1725to1726
2SC1831
2SA807to808
2SA1693to1694
2SC1832
2SD2082,2083
2SA878
2SA892
2SB1351
2SC2022
2SC2023
2SD256to259
2SC3179,3851,3851A
2SA907to909
2SA1215to1216,1295
2SC2147
2SD419to421
2SD1769,1785
2SC2198
2SC4024
2SD556to557
2SC4468
2SA1694
2SC2199
2SC4131
2SD593to594
2SC4020
2SA1067
2SC2256
2SD605
2SA1068
2SC2260to2262
2SC4467
2SD606
2SA1102
2SA1693
2SC2302
2SC3832
2SD614to615
2SD1769,1785
2SA1103
2SA1694
2SC2303
2SC3833
2SD617
2SD2082
2SA1104
2SA1694
2SC2304
2SC3833
2SD721
2SD2081
2SA1105
2SA1695
2SC2305
2SD722
2SD2081
2SA1106
2SA1695
2SC2306
2SC4140
2SD807
2SC3679
2SA1116
2SA1493
2SC2307
2SC3833
2SD810
2SC4024
2SA1117
2SA1494
2SC2317
2SD2016
2SD971
2SA1135
2SA1693
2SC2354
2SC2023
2SD972
2SD1796
2SA1169
2SA1493
2SC2364
2SD1031
2SD1769,1785
2SA1170
2SA1494
2SC2365
2SC3831
2SD1170
2SD2045
2SA1187
2SC2491
2SC4024
2SD1532
2SD2015
2SA1205
2SA1746
2SC2492
2SD2231
2SD2493
2SA1355
2SA1262,1488
2SC2493
2SD2437
2SD2494
2SC2577
2SC4466
2SA971
2SA980to982
2SB622
2SB711to712
2SB1259,1351
2SC2578
2SC4467
2SB1005
2SB1257
2SC2579
2SC4467
2SA768to769
2SA1262,1488,1488A
2SB1476
2SB1624
2SC2580
2SC4468
2SA770to771
2SA1725,1726
2SB1586
2SB1625
2SC2581
2SC4468
2SA957to958
2SA1667,1668
2SC1107
2SC3179,3851
2SC2607
2SC3857
2SA1489
2SA1693
2SC1108
2SC3851A
2SC2608
2SC3858
2SA1490
2SA1694
2SC1109
2SC3179,3851
2SC2665
2SC4466
2SA1491
2SA1695
2SC1110
2SC3851A
2SC2723
2SC4140
2SA1643
2SA1725
2SC1111to1112
2SC4467to4468
2SC2761
2SA1670
2SA1907
2SC1113
2SC4511to4512
2SC2773
2SC3857
2SA1671
2SA1908
2SC1114
2SC2774
2SC3858
2SA1672
2SA1909
2SC1115to1116
2SC4468
2SC2809
2SB1624
2SB1685
2SC1402to1403
2SC4467to4468
2SC2810A
2SC4820
2SB1625
2SB1687
2SC2825
2SD2045
2SB1626
2SB1686
2SC1826to1827
2SC3179,3851,3851A
2SC1983to1984
2SC3852,3852A
2SC1985to1986
2SC4511,4512
2SC2167to2168
2SC4381,4382
2SC1436
2SC1437
2SC2838
2SC1440to1441
2SC2900
2SC1442to1443
2SC3409
2SC3679
2SC4511to4512
2SC3520
2SC3706
2SC1477
2SC3909
2SC3680
2SC1504
2SC2023
2SC4023
2SC5124
2SC1577to1578
2SC3833,3831
2SC4199,4199A
2SC5124
2SC1579to1580
2SC4706
2SC4302
2SC4301
2SC1584to1585
2SC2921-2922,3264
2SC4303,4303A
2SC5002
2SC1618to1619
2SC4466-4467
2SC4494
2SC4495
2SC1629
2SD2045
2SC4756
2SC5002
2SC1664
2SC4558
2SD15to18
2SC1768
2SC1777
2SC1444to1445
2SC4140
Repair Parts
Replacement Parts
2SC2315to2316
2SC4558
2SC2810
2SC3890
2SC3300
2SC4131
2SC3853
2SC4466
2SC3854
2SC4467
2SC3855
2SC4468
2SC4385
2SC5099
2SC4386
2SC5100
2SC4387
2SC5101
2SC4468
2SC4503
2SD2083
2SD80to84
2SC4466,4467
2SC4558
2SD2495
2SD90to94
2SC3179,3851,3851A
2SC4820
2SC4518
2SC1783
2SD163to166
2SC4468
2SD2493
2SD2641
2SC1786
2SD201to203
2SC4466to4467
2SD2494
2SD2643
2SD211to214
2SC4468
2SD2495
2SD2642
2SC1454
2SC1828
176
2SC3832,3830
Sanken Electric Co.,Ltd.

1-11-1 Nishi-Ikebukuro,Toshima-ku, Tokyo
PHONE: 03-3986-6164
FAX: 03-3986-8637
Overseas Sales Offices

Asia
Sanken Electric Korea Co.,Ltd.
SK Life B/D 6F,
168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
PHONE: 82-2-714-3700
FAX: 82-2-3272-2145
Taiwan Sanken Electric Co.,Ltd.

Room 902, No.88, Chung Hsiao E. Rd., Sec. 2
Taipei, Taiwan R.O.C.
PHONE: 886-2-2356-8161
FAX: 886-2-2356-8261
Sanken Electric Singapore Pte.Ltd.

150 Beach Road, #14-03 The Gateway West,
Singapore 0718
PHONE: 291-4755
FAX: 297-1744
Sanken Electric Hong Kong Co.,Ltd.

1018 Ocean Centre, Canton Road,
Kowloon, Hong Kong
PHONE: 2735-5262
FAX: 2735-5494
North America
Allegro MicroSystems,Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615, U.S.A.
PHONE: (508) 853-5000
FAX: (508) 853-7861
Europe
Allegro MicroSystems Europe Limited.
Balfour House, Churchfield Road,
Walton-on-Thames, Surrey KT12 2TD, U.K.
PHONE: 01932-253355
FAX: 01932-246622
Contents of this catalog are subject to change due to modification
PRINTED in JAPAN H1-T01EE0-0107020SB

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POWER TRANSISTORS

SANKEN ELECTRIC CO.,LTD.

SANKEN POWER TRANSISTORS

Transistor Selection Guide

Collector Current IC(A)

CollectorEmitter Voltage VCEO(V)

Transistor Selection Guide

Transistor Selection Guide

MT-200 (2-screw mount)

(Multi emitter for High Frequency)

MT-200 (2-screw mount)

with built in temperature compensation diodes for audio amplifier

Transistor Selection Guide

MT-200 (2-screw mount)

Temperature compensation Transistors and Driver Transistors

Driver, Complement 2SA1859

Driver, Complement 2SA1859A

The word reliablity is an abstract term which refers to the degree to

Collector Current Ic(A)

SOA(Safe Operating Area)

Collector-Emitter Voltage Vce(V)

Figure 1 Bath Tub Curve

3. Quantitative Expression of Reliability

F R = r 100 (%/1,000 hours)(2)

In general, there are three types of failure modes in electronic components:

a) The type and specifications of our transistors and semiconductor

d) The reliability of transistors and semiconductor devices is greatly

Continuous Operations Test

Collector dissipation with maximum junction temperature is applied continuously at

Intermittent Operation Test

High Temperature Storage Test

Confirms the highest storage temperature and operating temperature of transistors.

Moisture Resistance Test

Heat Cycle Test

Heat Shock Test

Soldering Heat Test

Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for

Tested by dropping 10 times from 75 cm height to check for mechanical endurance

Reliability Standard : 60%

Figure 3 Quality Assurance System

Physical and Chemical Inspection

Specialized Tests for all units

Periodical Quality Assurance Test

Screw Tightening Torque

0.490 to 0.686 N m (5 to 7kgf cm)

FM20 (TO-220 Full Mold)

0.490 to 0.686 N m (5 to 7kgf cm)

0.686 to 0.822 N m (7 to 9kgf cm)

FM100 (TO-3P Full Mold)

0.686 to 0.822 N m (7 to 9kgf cm)

MT200 ( two-point mount)

0.686 to 0.822 N m (7 to 9kgf cm)

2GR ( one-point mount)

0.686 to 0.822 N m (7 to 9kgf cm)

Collector Current Ic (A)

Collector-Emitter Voltage VCE (V)

Case Temp Tc (C)

Fig.1 Safe Operating Area

Fig.2 Derating Curve of Safe Operating Area

Insulater: Mica, with a thickness of 0.06mm, +0.045 0.005 allowance

Insulation Bush for MT-25 (TO220)

Switching Characteristics Test Circuit/Measurement Wave Forms

DC Voltage between Collector and Base when Emitter is open

DC voltage between Emitter and Base when Collector is open