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LF253 - LF353
WIDE BANDWIDTH
DUAL J-FET OPERATIONAL AMPLIFIERS
..
..
.
..
.
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
DESCRIPTION
The LF353 are high speed JFET input dual operational amplifiers incorporating well matched, high
voltageJFET andbipolartransistorsin a monolithicintegrated circuit.
The devicesfeaturehigh slew rates, low input bias and
offset currents, and low offset voltage temperature
coefficient.
ORDER CODES
Part Number
Temperature
Package
N
LF353
0 C, +70 C
LF253
40oC, +105oC
LF153
55 C, +125 C
1
2
June 1998
8
7
-
1
2
3
4
5
6
7
8
- Output 1
- Inverting input 1
- Non-inverting input 1
- VCC- Non-inverting input 2
- Inverting input 2
-Output 2
+
- VCC
1/9
input
Non-inverting
input
Inverting
100
200
Output
100
30k
8.2k
1.3 k
35k
1.3k
35k
100
VCC
Offs e t Null1
Offse t Null2
Parameter
Unit
18
Vi
15
Vid
30
Ptot
Power Dissipation
680
mW
VCC
Tstg
Notes :
2/9
Value
Infinite
LF353
LF253
LF153
0 to 70
40 to 105
55 to 125
65 to 150
1. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the
zero reference level is the midpoint between VCC+ and VCC.
2. Differential voltages are at the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less.
4. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the
dissipation rating is not exceeded.
DV io
Iio
Iib
Avd
SVR
ICC
Parameter
Min.
Max.
10
13
10
100
4
pA
nA
20
200
20
pA
nA
mV
50
25
200
80
80
86
dB
mA
1.4
11
+15
-12
CMR
70
70
86
10
10
40
10
12
10
12
12
13.5
12
16
VOPP
SR
tr
KOV
GBP
Ri
THD
en
m
VO1/VO2
V/oC
V/mV
Vicm
Ios
Unit
Typ.
3.2
3.2
V
dB
mA
60
60
V
RL
RL
RL
RL
=
=
=
=
2k
10k
2k
10k
Slew Rate
(Vi = 10V, R L = 2k, C L = 100pF, T amb = 25oC, unity gain)
V/s
Rise Time
o
(Vi = 20mV, RL = 2k, CL = 100pF, Tamb = 25 C, unity gain)
0.1
Overshoot
o
(Vi = 20mV, RL = 2k, CL = 100pF, Tamb = 25 C, unity gain)
10
%
MHz
2.5
4
1012
Input Resistance
Total Harmonic Distortion (f = 1kHz, AV = 20dB, R L = 2k,
o
CL = 100pF, Tamb = 25 C, VO = 2VPP)
0.01
15
nV
Hz
Phase Margin
45
Degrees
120
dB
* The input bias currents are junction leakage currents which approximately double for every 10oC increase in the junction temperature.
3/9
30
VCC = 15V
R L= 2k
Tamb = +25 C
See Figure 2
25
20
VCC = 10V
15
10
VCC =
5V
5
0
100
1K
10K
100K
1M
10M
MAXIMUMPEAK-TO-PEAK OUTPUT
VOLTAGE (V)
MAXIMUMPEAK-TO-PEAK OUTPUT
VOLTAGE (V)
30
25
V CC = 15V
20
V CC = 10V
15
10
5
0
100
1K
10K
15V
15
Ta mb = -55 C
10
5
Ta mb = +125 C
10k
40k
100k
400k
1M
4M
10M
MAXIMUMPEAK-TO-PEAK OUTPUT
VOLTAGE (V)
MAXIMUMPEAK-TO-PEAK OUTPUT
VOLTAGE (V)
VCC =
R L = 2k
Se e Figure 2
1M
10M
30
20
100K
FREQUENCY (Hz)
25
5V
VCC =
FREQUENCY (Hz)
Tamb = +25 C
R L= 10k
T amb = +25 C
S e e F igure 2
30
25
20
15
= 10k
= 2k
10
V CC =
15V
S e e Figu re 2
0
-75
-50
-25
25
50
75
-50
125
TEMPER ATURE ( C)
FREQUENCY (Hz)
4/9
30
25
VCC= 15V
Ta mb= +25 C
S e e Figu re 2
20
15
10
5
0
0.1 0.2
0.4
0.7 1
10
MAXIMUMPEAK-TO-PEAK OUTPUT
VOLTAGE (V)
30
25
R L = 10 k
Ta mb = +25 C
20
15
10
5
0
10
12
14
16
1000
VCC =
1 5V
DIFFERENTIAL VOLTAGE
AMPLIFICATION (V/V)
1 00
10
1
0 .1
0 .01
-50
400
200
100
40
20
10
4
2
1
-25
25
50
75
10 0
125
VCC = 15V
VO = 10V
R L = 2k
-75 -50
-25
TEMPERATURE ( C)
DIFFERENTIAL
VOLTAGE
AMPLIFICATION
(le ft s ca le )
P HASE S HIFT
(right sca le)
180
10
1
100
90
R L = 2k
C L = 100pF
V CC = 15V
T a mb = +125 C
1K
10K
0
100K
1M
10M
FREQUENCY (Hz)
VCC = 15V
No signa l
No loa d
-25
25
50
50
75
100 125
75
TEMPERATURE ( C)
10 0 125
250
225 V CC +/-15V
200 No s igna l
No loa d
175
150
100
75
50
25
0
-75 -50 -25
0
25
50
75
100 125
TEMPERATURE ( C)
25
DIFFERENTIAL VOLTAGE
AMPLIFICATION(V/V)
100
TEMPERATURE ( C )
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta mb= +25 C
No s ignal
No loa d
10
12
14
16
5/9
89
88
R L = 10 k
VCC = 15V
87
86
85
84
83
-75 -50
-25
25
50
75
100
125
6
4
OUTPUT
INPUT
2
0
VCC = 15V
R L = 2 k
C L= 100pF
Ta mb = +25 C
-2
-4
-6
0
0.5
TEMPERATURE ( C)
OVERSHOOT
90%
16
12
4
0
-4
VCC= 15V
R L= 2k
Ta mb = +25 C
10%
tr
0
0.5
50
40
3.5
30
20
10
0
10
0.6 0.7
40
100
400 1k
4k
FREQUENCY (Hz)
VCC = 15V
A V = 10
R S = 100
Ta mb = +25 C
60
TIME (s )
1
0.4
0.1
0.04
VV
= = 15V
15V
CC
CC
AA
V V= =1 1
VV(rms)
= 6V
O O (rms)= 6V
=
+25 C
TaTmb
a mb = +25 C
0.01
0.004
0.001
100
400
1k
4k
10k
6/9
2.5
70
24
28
20
1.5
TIME (s )
40k
100k
10k
40k 100k
10k
1k
1/2
eo
LF153
eI
eI
1/2
RL = 2k
CL= 100pF
eo
LF153
RL
CL= 100pF
TYPICAL APPLICATIONS
QUADRUPLE OSCILLATOR
1N 4148
18k
-15V
18pF
18pF
1/2
88.4k
-
LF353
1/2
88.4k
6 s in t
LF353
18k
18pF
88.4k
1N 4148
+15V
7/9
PM-DIP8.EPS
A
a1
B
b
b1
D
E
e
e3
e4
F
i
L
Z
8/9
Min.
Millimeters
Typ.
3.32
0.51
1.15
0.356
0.204
Max.
1.65
0.55
0.304
10.92
9.75
7.95
Min.
0.020
0.045
0.014
0.008
Max.
0.065
0.022
0.012
0.430
0.384
0.313
2.54
7.62
7.62
3.18
Inches
Typ.
0.131
0.100
0.300
0.300
6.6
5.08
3.81
1.52
0.125
0260
0.200
0.150
0.060
DIP8.TBL
Dimensions
PM-SO8.EPS
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
Min.
Millimeters
Typ.
0.1
0.65
0.35
0.19
0.25
Max.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
Min.
Inches
Typ.
0.026
0.014
0.007
0.010
Max.
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.189
0.228
0.197
0.244
0.004
45 (typ.)
4.8
5.8
5.0
6.2
1.27
3.81
3.8
0.4
0.050
0.150
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
SO8.TBL
Dimensions
8 (max.)
ORDER CODE :
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this pub lication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support
devices or systems without express written approval of STMicroelectronics.
The ST log o is a trademark of STMicroelectronics
1998 STMicroelectronics Printed in Italy All Rights Reserved
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