Ordering number:€N 1792C. No.1792C Features + Low noise: NP= +848 typ (f= 100MHz) N-Channel MOS Silicon FET + High power gain: PG=27dB typ (f=100MHz) - Small reverse transfer capacitance: Cpgg=0-035PF (Upg=10V, f=1Mliz) FM Tuner, VHF Amp Applications Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Yps, 20 0¥ Gate to Source Voltage CS 2 oy Drain Current Ip 30 mk, Allowable Power Dissipation Pp 300 a Channel Tenperature Teh 125 8c Storage Temperature Tete “55 to +125 °C Electrical Characteristics at Ta=25°C min typ max unit Drain to Source Voltage Vpsx — Vgg==4V,Tp=100#4 20 v Gate Cutoff Current Igss _Vpg*0Vs Vgg=*5V 10 nk Drain Current Ings Vps=10V, Vgg=0¥ 1.28 12" ok Gate to Source Ves(orr) Yps=10V,Ip=100#A 2.5 0 Cutoff Voltage Forward Transfer Admittance |¥es| Vogt 10V, Vggt0V, fs tkHz "1 nS Input Capacitance Criss — Ypst10V, Vggr0V, f= tk 2.4 BF Reverse Transfer Capacitance ones 0.035 BF Power Gain Pe Vpg#10V, Voge OV, f= 100Ht2 2t eB Noise Figure .F S88 specified Test Cérout. 1,8 3.0 4B #: The 2SK54 4s classified by Ings as follows (unit:mA): (2D 5-0 [2.5 E 6.0 [5.0 F 72) Te Cem aot Package Dimensions 2040 Cunit:mm) 2 ete itt G: cate S: Source D: brain savor SPA ic Co. 6037TA/2075KI,TS No. 1792-1742sk544 To vos Yost 3 i i E . § i & 5 9S 3 c tate to Source Yoltase,Vos Lyfsl = Vos a lytsl= Io a Ht as al as Y €+b- 4 i Se + % Gabe vo Source Vortaberdgs Drain CurrentTp - h Vos(off) = Toss Iyfst~ Toss . [ Vos= 107 > : T a q By Sn0) ER i i a | 8 é ay i i ol fyb 44 $ is Drain Current,Tpgs ~ aA Drain CurrentsIpgs ~ mk Cissetrss = Vos ie lyfs| - Vos. ga" ard 5, | vs=or af vos=0v i ff as 3s 10 = i Peet Ed eH gE E I ogo Ef ae ree om ae i Eeroaeereer@ peer maeerereras cera £ 7% Drain’ to Source Vortage, Tyg = ¥ Drain to Source Toltage,¥pg ~ ¥ No.1792-2/4Input Adnittance vis - Vos ate, on eC a % Drain to Source Yoltage,Vpg ~ V forward Transfer Adni ttance y#s ~ Vos 7% i 82, fen a; as j 1 Hore wd + a Drain to Soufee Voltage tps“ ¥ Input Adnittance yig - f Wage IO ‘0 ° # & ' 7 1 a ” s 3 ee Frequenoysf = Mie * Forward Transfer Adni ttance Yfs~f 0 1 i J Frequency,f = Milz Reverse ‘Transfer Adnittance'yrs ~ VOS Vos=Ov = cor % { ic 1 1 cre [ cal a 76 Drain to Source Voltage, Yps = V Output Adwittance yos - vOS Vos = voce wo HS fe Boe oy T4680 Drain to Source Voltage,Yps = V Reverse Transfer Admittance yrs - al eo g ® I 1 bd oo ro " © 2 a Frequency, ~ Miz i Output Admittance yos - f Vigg= 107 8 go oe i 1 10, Frequency, f iz No.1792=3/4,.2SK544 Pp - Ta SK PG.NF = Ip Vos= 107 © root. 4¥ =o a8 ge 55 he Fy 5 5 © % 6s re Drain Current Ip ~ mh ‘Ambient Tenperature,ta ~ °C Mlovable Pover Dissipation, Py = mil WF Test Cirouit Unit(Capacitance : F) 1,0mmé plated wire 10mmé 67, tap: 3T from H side 1,0mmé plated wire 10mmé 77, tap: HT from H side No products descriped or contained herein are intended for use in surgical implants, iMo-eupport systems, rospace equipment, nuclear power contol systoms, vehiles, disaster/orime-prevention equipment and the lke, the fature of which may dieoty or indeecty’ cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall @ Accept full responsitity and indemnity and defend SANYO ELECTRIC CO, LTD, ite affilates, subsidangs and distnbutors and all their officers and employees, jointly and Severaly, against any and all claims and ligation ang all damages, cost and expenses associated with such use: ® Not impose any responsibilty for any fault or negligence which may be cited in any suoh claim or Itgation on SANYO ELECTRIC CO. LTD, is afftates, subsidavies and dstabutors or aay of their officers and employees jointly or several, Minvornaton (including cout dagrams and ciouit parameters) hors is for example only: it ia not guarant- ‘ed for volume produatin, SANYO beleves information herein is aoourate and relabl, but no guarantees fre made or implied regaring ts use or any infringements of intelectual property rights or other rights of third parties, Wo. 1792-74