UniFET

TM

FDB44N25
250V N-Channel MOSFET
Features

Description

44A, 250V, RDS(on) = 0.069 @VGS = 10 V

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe,
DMOS technology.

Low gate charge ( typical 47 nC)

Low Crss ( typical 60 pF)

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.

Fast switching
100% avalanche tested
Improved dv/dt capability

D
{

G{

 
z
z

Absolute Maximum Ratings

Symbol

Parameter

VDSS

Drain-Source Voltage

ID

Drain Current

- Continuous (TC = 25C)

- Continuous (TC = 100C)
- Pulsed

IDM

Drain Current

VGSS

Gate-Source voltage

EAS

Single Pulsed Avalanche Energy

IAR

Avalanche Current

EAR
dv/dt
PD

Power Dissipation

FDB44N25

Unit

250

44
26.4

A
A

176

30

(Note 2)

2055

mJ

(Note 1)

44

Repetitive Avalanche Energy

(Note 1)

30.7

mJ

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

307
2.45

W
W/C

-55 to +150

300

(Note 1)

(TC = 25C)
- Derate above 25C

TJ, TSTG

Operating and Storage Temperature Range

TL

Maximum Lead Temperature for Soldering Purpose,

1/8 from Case for 5 Seconds

Thermal Characteristics
Symbol

Parameter

Min.

Max.

Unit

RJC

Thermal Resistance, Junction-to-Case

--

0.41

C/W

RJA*

Thermal Resistance, Junction-to-Ambient*

--

40

C/W

RJA

Thermal Resistance, Junction-to-Ambient

--

62.5

C/W

* When mounted on the minimum pad size recommended (PCB Mount)

2005 Fairchild Semiconductor Corporation

FDB44N25 Rev A

www.fairchildsemi.com

FDB44N25 250V N-Channel MOSFET

September 2005

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDB44N25

FDB44N25TM

D2-PAK

330mm

24mm

800

Electrical Characteristics
Symbol

TC = 25C unless otherwise noted

Parameter

Conditions

Min.

Typ.

Max Units

250

--

--

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250A

BVDSS
/ TJ

Breakdown Voltage Temperature

Coefficient

ID = 250A, Referenced to 25C

--

0.25

--

V/C

IDSS

Zero Gate Voltage Drain Current

VDS = 250V, VGS = 0V

VDS = 200V, TC = 125C

---

---

1
10

A
A

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30V, VDS = 0V

--

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30V, VDS = 0V

--

--

-100

nA

3.0

--

5.0

--

0.058

0.069

--

32

--

--

2210

2870

pF

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250A

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10V, ID = 22A

gFS

Forward Transconductance

VDS = 40V, ID = 22A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

--

450

585

pF

--

60

90

pF

--

55

120

ns

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 125V, ID = 44A

RG = 25

(Note 4, 5)

VDS = 200V, ID = 44A

VGS = 10V
(Note 4, 5)

--

400

810

ns

--

85

180

ns

--

115

240

ns

--

47

61

nC

--

18

--

nC

--

24

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

44

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

--

176

VSD

Drain-Source Diode Forward Voltage

VGS = 0V, IS = 44A

--

--

1.4

trr

Reverse Recovery Time

--

195

--

ns

Qrr

Reverse Recovery Charge

VGS = 0V, IS = 44A

dIF/dt =100A/s

--

1.8

--

(Note 4)

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 44A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

2
FDB44N25 Rev A

www.fairchildsemi.com

FDB44N25 250V N-Channel MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :

10

ID, Drain Current [A]

10

ID, Drain Current [A]

Figure 2. Transfer Characteristics

10

150 C
1

10

25 C
o

-55 C

Notes :

Notes :

10

1. VDS = 40V
2. 250 s Pulse Test

1. 250 s Pulse Test

2. TC = 25

-1

10

10

10

10

VDS, Drain-Source Voltage [V]

10

12

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperatue

0.125
2

IDR, Reverse Drain Current [A]

RDS(ON) [ ],
Drain-Source On-Resistance

10

0.100

0.075

VGS = 10V

0.050

VGS = 20V
0.025

Note : T = 25

10

150

25

Notes :

1. VGS = 0V
2. 250 s Pulse Test

0.000
0

25

50

75

100

125

10

150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

VSD, Source-Drain voltage [V]

ID, Drain Current [A]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

12

6000

Capacitances [pF]

5000

4000

3000

Coss
Ciss

Note ;

2000

1000

VGS, Gate-Source Voltage [V]

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

1. VGS = 0 V
2. f = 1 MHz

Crss

VDS = 50V

10

VDS = 125V
VDS = 200V

Note : I = 44A
D

0
-1
10

0
0

10

10

20

30

40

50

60

QG, Total Gate Charge [nC]

VDS, Drain-Source Voltage [V]

3
FDB44N25 Rev A

10

www.fairchildsemi.com

FDB44N25 250V N-Channel MOSFET

Typical Performance Characteristics

FDB44N25 250V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation
vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature
3.0

1.1

1.0

Notes :

0.9

1. VGS = 0 V
2. ID = 250 A

0.8
-100

-50

50

100

2.5

RDS(ON), (Normalized)
Drain-Source On-Resistance

BVDSS, (Normalized)
Drain-Source Breakdown Voltage

1.2

150

2.0

1.5

1.0

Notes :

0.5

1. VGS = 10 V
2. ID = 22 A

0.0
-100

200

-50

50

100

TJ, Junction Temperature [ C]

150

200

TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

10

50

10 s
2

100 s
1 ms
10 ms
100 ms
DC

10

40

ID, Drain Current [A]

ID, Drain Current [A]

10

Operation in This Area

is Limited by R DS(on)

10

Notes :
o

1. TC = 25 C

-1

10

2. TJ = 150 C
3. Single Pulse

30

20

10

-2

10

10

0
25

10

10

50

75

VDS, Drain-Source Voltage [V]

100

125

150

TC, Case Temperature [ ]

Z JC(t), Thermal Response

Figure 11. Transient Thermal Response Curve

D = 0 .5
10

-1

0 .2
0 .1

0 .0 5

10

0 .0 2
0 .0 1

-2

N o te s :
1 . Z J C( t) = 0 .4 1
/W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t)

PDM
s in g le p u ls e

t1
t2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]

4
FDB44N25 Rev A

www.fairchildsemi.com

FDB44N25 250V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

VGS

Same Type
as DUT

50K

Qg

200nF

12V

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD

VGS
RG

VGS

DUT

10V

10%

td(on)

tr

td(off)

t on

tf
t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS
BVDSS
IAS

ID
RG

VDD

tp

tp

5
FDB44N25 Rev A

VDS (t)

VDD

DUT

10V

ID (t)

Time

www.fairchildsemi.com

Preliminary
FDB44N25 250V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop

6
FDB44N25 Rev A

www.fairchildsemi.com

FDB44N25 250V N-Channel MOSFET

Mechanical Dimensions

D2-PAK

FDB44N25 Rev A

www.fairchildsemi.com

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with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16