AP4525GEH

Pb Free Plating Product

Advanced Power
Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

Simple Drive Requirement

N-CH BVDSS

D1/D2

40V

RDS(ON)

Good Thermal Performance

ID

Fast Switching Performance

S1

RoHS Compliant

28m

G1

15A

P-CH BVDSS

S2
G2

TO-252-4L

Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

-40V

RDS(ON)

42m

ID

-12A

D1

D2

G1

G2

S1

S2

Absolute Maximum Ratings

Symbol

Parameter

Rating
N-channel

Units

P-channel

VDS

Drain-Source Voltage

40

-40

VGS

Gate-Source Voltage

16

16

ID@TA=25

Continuous Drain Current

15.0

-12.0

ID@TA=70

Continuous Drain Current

12.0

-10.0

50

-50

IDM

Pulsed Drain Current

PD@TA=25

Total Power Dissipation

10.4

Linear Derating Factor

0.083

W/

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol

Parameter

Value

Unit

Rthj-c

Thermal Resistance Junction-case

Max.

12

/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

110

/W

Data and specifications subject to change without notice

200725064-1/7

AP4525GEH
o

N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)

Symbol

Parameter

Test Conditions

Typ.

Max. Units

40

BVDSS

Drain-Source Breakdown Voltage

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA

0.03

V/

RDS(ON)

Static Drain-Source On-Resistance 2

VGS=10V, ID=6A

28

VGS=4.5V, ID=4A

32

VDS=VGS, ID=250uA

VDS=10V, ID=6A

Drain-Source Leakage Current (Tj=25 C)

VDS=40V, VGS=0V

uA

Drain-Source Leakage Current (Tj=70oC)

VDS=32V, VGS=0V

25

uA

Gate-Source Leakage

VGS=16V

30

uA

ID=6A

14

nC

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

IGSS

VGS=0V, ID=250uA

Min.

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=20V

1.5

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

nC

td(on)

Turn-on Delay Time

VDS=20V

ns

tr

Rise Time

ID=6A

20

ns

td(off)

Turn-off Delay Time

RG=3,VGS=10V

20

ns

tf

Fall Time

RD=3.3

ns

Ciss

Input Capacitance

VGS=0V

580

930

pF

Coss

Output Capacitance

VDS=25V

100

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

70

pF

Rg

Gate Resistance

f=1.0MHz

Min.

Typ.

IS=15A, VGS=0V

1.8

Source-Drain Diode
Symbol
VSD

Parameter
Forward On Voltage

2
2

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=6A, VGS=0V

20

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

15

nC

2/7

AP4525GEH
o

P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

-40

-0.03

V/

VGS=-10V, ID=-5A

42

VGS=-4.5V, ID=-3A

60

-0.8

-2.5

BVDSS

Drain-Source Breakdown Voltage

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA

RDS(ON)

Static Drain-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS
IGSS

VGS=0V, ID=-250uA

VDS=VGS, ID=-250uA

Max. Units

VDS=-10V, ID=-5A

VDS=-40V, VGS=0V

-1

uA

Drain-Source Leakage Current (Tj=70 C)

VDS=-32V, VGS=0V

-25

uA

Gate-Source Leakage

VGS=16V

30

uA

Drain-Source Leakage Current (Tj=25 C)

Qg

Total Gate Charge

ID=-5A

24

nC

Qgs

Gate-Source Charge

VDS=-20V

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

nC

VDS=-20V

8.5

ns

td(on)

Turn-on Delay Time

tr

Rise Time

ID=-5A

15

ns

td(off)

Turn-off Delay Time

RG=3,VGS=-10V

27

ns

tf

Fall Time

RD=4

25

ns

Ciss

Input Capacitance

VGS=0V

770

1230

pF

Coss

Output Capacitance

VDS=-20V

165

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

115

pF

Rg

Gate Resistance

f=1.0MHz

Min.

Typ.

IS=-12A, VGS=0V

-1.8

IS=-5A, VGS=0V

20

ns

dI/dt=-100A/s

16

nC

Source-Drain Diode
Symbol
VSD

Parameter

Test Conditions

Forward On Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Max. Units

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .

3/7

AP4525GEH
N-Channel
50

50

10V
7.0V
5.0V
4.5V

T A = 25 C

ID , Drain Current (A)

40

10V
7.0V
5.0V
4.5V

T A = 150 C

40

ID , Drain Current (A)

30

20

V G =3.0V

30

20

V G =3.0V
10

10

0
0

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

120

ID=4A
T A =25 o C

1.6

Normalized RDS(ON)

RDS(ON) (m )

100

ID=6A
V G =10V

80

60

1.2

40

0.8

20
2

25

10

50

75

100

125

150

T j , Junction Temperature ( o C)

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature
1.6

14

Normalized VGS(th) (V)

12

10

IS(A)

T j =150 o C

T j =25 o C

1.2

0.8

0.4

0
0

0.2

0.4

0.6

0.8

1.2

1.4

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.6

-50

50

100

150

T j , Junction Temperature ( C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
4/7

AP4525GEH
N-Channel
f=1.0MHz
1000

C iss

I D =6A
V DS =20V
8

C (pF)

VGS , Gate to Source Voltage (V)

12

C oss

100

C rss

10

0
0

10

15

20

Q G , Total Gate Charge (nC)

13

17

21

25

29

V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

ID (A)

10

100us

1ms
10ms
100ms
1s
DC

T A =25 o C
Single Pulse
0.1

Normalized Thermal Response (Rthjc)

100

Duty factor=0.5

0.2

0.1

0.1
0.05

PDM
0.02

t
T

0.01

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

Single Pulse

0.01
0.1

10

100

0.00001

0.0001

V DS , Drain-to-Source Voltage (V)

0.001

0.01

0.1

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

50

VG
V DS =5V
ID , Drain Current (A)

40

T j =25 o C

T j =150 o C

QG
4.5V

30

QGS

QGD

20

10

Charge

0
0

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

5/7

AP4525GEH
P-Channel
50

50

-10V
-7.0V
-5.0V
-4.5V

-ID , Drain Current (A)

40

T A = 150 C

40

30

V G = - 3.0V

20

-10V
-7.0V
-5.0V
-4.5V

-ID , Drain Current (A)

T A = 25 C

30

20

V G = - 3.0V

10

10

0
0

-V DS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1.6

200

I D = -3 A

I D = -5A
V G = -10V

T A =25 o C

170

Normalized RDS(ON)

RDS(ON) (m)

1.4
140

110

80

1.2

1.0

50

0.8

20
2

25

10

-V GS ,Gate-to-Source Voltage (V)

50

75

100

125

150

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature
1.6

12

Normalized -VGS(th) (V)

10

-IS(A)

T j =150 o C

T j =25 o C

1.2

0.8

0.4
0.1

0.3

0.5

0.7

0.9

1.1

1.3

-V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.5

-50

50

100

150

T j , Junction Temperature ( C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
6/7

AP4525GEH
P-Channel
f=1.0MHz

10000

I D = -5 A
V DS = - 2 0 V
8

1000

C iss
C (pF)

-VGS , Gate to Source Voltage (V)

12

C oss
C rss

100

10
0

12

16

20

Q G , Total Gate Charge (nC)

13

17

21

25

29

-V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

Normalized Thermal Response (Rthjc)

Duty factor=0.5

10

-ID (A)

100us

1ms
1

10ms
100ms
1s
DC

T c =25 C
Single Pulse
0.1

0.2

0.1

0.1
0.05

PDM
0.02

t
T

0.01

Duty factor = t/T

Peak Tj = PDM x Rthjc + T C

Single Pulse

0.01
0.1

10

100

0.00001

0.0001

-V DS , Drain-to-Source Voltage (V)

0.001

0.01

0.1

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

50

VG

V DS =-5V
-ID , Drain Current (A)

40

T j =25 o C

QG

T j =150 o C

30

-4.5V
QGS

QGD

20

10

Charge

0
0

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

7/7