SOT23 PNP SILICON PLANAR

FMMT555 MEDIUM POWER TRANSISTOR FMMT555

ISSUE 4 – AUGUST 2003
FEATURES
TYPICAL CHARACTERISTICS * 150 Volt VCEO
* 1 Amp continuous current E
ZTX554/55-2
C
IB1=IB2=IC/10
-0.8
tr ts tf
COMPLEMENTARY TYPE – FMMT455
IC/IB=10 ns µs ns
-0.6 500 5 ts 1000 B
VCE(sat) - (Volts)

PARTMARKING DETAIL – 555

Switching time
400 4 800

-0.4 tf
300 3 600 td
SOT23
200 2
ns
400 100
ABSOLUTE MAXIMUM RATINGS.
-0.2 td
100 1 200 50 PARAMETER SYMBOL VALUE UNIT
tr
0 -0.0001 -0.001 -0.01 -0.1 -1
0 0
-0.01 -0.1 -1
0 0 Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base Voltage VEBO -5 V
VCE(sat) v IC Switching Speeds Peak Pulse Current ICM -2 A
Continuous Collector Current IC -1 A
Base Current IB -200 mA
100 -1.4
Power Dissipation at Tamb = 25°C Ptot 500 mW
hFE - Normalised Gain (%)

80 -1.2 IC/IB=10
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
VCE=-10V
VBE(sat) - (Volts)

60
-1.0
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
40
-0.8 PARAMETER SYMBOL MIN. MAX UNIT CONDITIONS.

20 Collector-Base V(BR)CBO -160 V IC=-100 A

-0.6 Breakdown Voltage
0 Collector-Emitter V(BR)CEO -150 V IC=-10mA*
-0.0001 -0.001 -0.01 -0.1 1 -0.0001 -0.001 -0.01 -0.1 -1
Breakdown Voltage
IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base V(BR)EBO -5 V IE=-100 A


hFE v IC VBE(sat) v IC Breakdown Voltage
Collector Cut-Off Current ICBO -0.1
A VCB =-140V
Single Pulse Test at Tamb=25°C
-10
A VCB =-140V, Tamb =100°C
-1.4 10
Emitter Cut-Off Current IEBO -0.1
A VEB=-4V
IC-Collector Current (A)

-1.2 1 Collector-Emitter VCE(sat) -0.3 V IC=-100mA, IB=-10mA*

VCE=-10V Saturation Voltage
VBE - (Volts)

-1.0
0.1
Base-Emitter VBE(sat) -1 V IC=-100mA, IB=-10mA*
DC
1s Saturation Voltage
100ms
10ms
-0.8
0.01 1ms Base-Emitter VBE(on) -1 V IC=-100mA, VCE =-10V*
100
s
Turn-on Voltage
-0.6
Static Forward Current hFE 50 IC=-10mA, VCE =-10V*
0.001
-0.0001 -0.001 -0.01 -0.1 -1 0.1V 1V 10V 100V 1000V Transfer Ratio 50 300 IC=-300mA, VCE =-10V*
Transition Frequency fT 100 MHz IC=-50mA, VCE =-10V
IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) f=100MHz
VBE(on) v IC Safe Operating Area Output Capacitance Cobo 10 pF VCB =-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%


Spice parameter data is available upon request for this device
3 - 132 3 - 131
 SOT23 PNP SILICON PLANAR
FMMT555 MEDIUM POWER TRANSISTOR FMMT555
ISSUE 3 – JANUARY 1996
FEATURES
TYPICAL CHARACTERISTICS * 150 Volt VCEO
* 1 Amp continuous current E
ZTX554/55-2
C
IB1=IB2=IC/10
-0.8
tr ts tf
COMPLEMENTARY TYPE – FMMT455
IC/IB=10 ns µs ns
-0.6 500 5 ts 1000 B
VCE(sat) - (Volts)

PARTMARKING DETAIL – 555

Switching time
400 4 800

-0.4 tf
300 3 600 td
SOT23
200 2
ns
400 100
ABSOLUTE MAXIMUM RATINGS.
-0.2 td
100 1 200 50 PARAMETER SYMBOL VALUE UNIT
tr
0 -0.0001 -0.001 -0.01 -0.1 -1
0 0
-0.01 -0.1 -1
0 0 Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base Voltage VEBO -5 V
VCE(sat) v IC Switching Speeds Peak Pulse Current ICM -2 A
Continuous Collector Current IC -1 A
Base Current IB -200 mA
100 -1.4
Power Dissipation at Tamb = 25°C Ptot 500 mW
hFE - Normalised Gain (%)

80 -1.2 IC/IB=10
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
VCE=-10V
VBE(sat) - (Volts)

60
-1.0
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
40
-0.8 PARAMETER SYMBOL MIN. MAX UNIT CONDITIONS.

20 Collector-Base V(BR)CBO -160 V IC=-100 A

-0.6 Breakdown Voltage
0 Collector-Emitter V(BR)CEO -150 V IC=-10mA*
-0.0001 -0.001 -0.01 -0.1 1 -0.0001 -0.001 -0.01 -0.1 -1
Breakdown Voltage
IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base V(BR)EBO -5 V IE=-100 A


hFE v IC VBE(sat) v IC Breakdown Voltage
Collector Cut-Off Current ICBO -0.1
A VCB =-140V
Single Pulse Test at Tamb=25°C
-10
A VCB =-140V, Tamb =100°C
-1.4 10
Emitter Cut-Off Current IEBO -0.1
A VEB=-4V
IC-Collector Current (A)

-1.2 1 Collector-Emitter VCE(sat) -0.3 V IC=-100mA, IB=-10mA*

VCE=-10V Saturation Voltage
VBE - (Volts)

-1.0
0.1
Base-Emitter VBE(sat) -1 V IC=-100mA, IB=-10mA*
DC
1s Saturation Voltage
100ms
10ms
-0.8
0.01 1ms Base-Emitter VBE(on) -1 V IC=-100mA, VCE =-10V*
100
s
Turn-on Voltage
-0.6
Static Forward Current hFE 50 IC=-10mA, VCE =-10V*
0.001
-0.0001 -0.001 -0.01 -0.1 -1 0.1V 1V 10V 100V 1000V Transfer Ratio 50 300 IC=-300mA, VCE =-10V*
Transition Frequency fT 100 MHz IC=-50mA, VCE =-10V
IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) f=100MHz
VBE(on) v IC Safe Operating Area Output Capacitance Cobo 10 pF VCB =-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%


Spice parameter data is available upon request for this device
3 - 132 3 - 131