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B
E
TO-92
C
B
E
B
C
C
SOT-223
E
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings* T
A
= 25C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 C
2001 Fairchild Semiconductor Corporation
Thermal Characteristics T
A
= 25C unless otherwise noted
Symbol Characteristic Max Units
2N3904 *MMBT3904 **PZT3904
PD Total Device Dissipation
Derate above 25C
625
5.0
350
2.8
1,000
8.0
mW
mW/C
RJC
Thermal Resistance, Junction to Case 83.3 C/W
RJA
Thermal Resistance, Junction to Ambient 200 357 125 C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
2N3904 MMBT3904
SOT-23
Mark: 1A
PZT3904
2
N
3
9
0
4
/
M
M
B
T
3
9
0
4
/
P
Z
T
3
9
0
4
2N3904/MMBT3904/PZT3904, Rev A
Electrical Characteristics T
A
= 25C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown
Voltage
IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 6.0 V
IBL Base Cutoff Current VCE = 30 V, VEB = 3V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VEB = 3V 50 nA
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
Spice Model
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz
300 MHz
Cobo
Output Capacitance VCB = 5.0 V, IE = 0,
f = 1.0 MHz
4.0 pF
Cibo
Input Capacitance VEB = 0.5 V, IC = 0,
f = 1.0 MHz
8.0 pF
NF Noise Figure IC = 100 A, VCE = 5.0 V,
RS =1.0k,f=10 Hz to 15.7kHz
5.0 dB
t
d
Delay Time V
CC
= 3.0 V, V
BE
= 0.5 V, 35 ns
t
r
Rise Time I
C
= 10 mA, I
B1
= 1.0 mA 35 ns
t
s
Storage Time V
CC
= 3.0 V, I
C
= 10mA 200 ns
t
f
Fall Time I
B1
= I
B2
= 1.0 mA 50 ns
h
FE
DC Current Gain I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
40
70
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.2
0.3
V
V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65 0.85
0.95
V
V
2
N
3
9
0
4
/
M
M
B
T
3
9
0
4
/
P
Z
T
3
9
0
4
NPN General Purpose Amplifier
(continued)
2
N
3
9
0
4
/
M
M
B
T
3
9
0
4
/
P
Z
T
3
9
0
4
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
B
E
(
O
N
)
C
V = 5V
CE
25 C
125 C
- 40 C
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
B
E
S
A
T
C
= 10
25 C
125 C
- 40 C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
C
E
S
A
T
25 C
C
= 10
125 C
- 40 C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
n
A
)
A
V = 30V
CB
C
B
O
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
C
obo
C
ibo
f = 1.0 MHz
Typical Pulsed Current Gain
vs Collector Current
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
Y
P
IC
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
I
N
F
E
- 40 C
25 C
C
V = 5V
CE
125 C
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
W
)
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
N
F
-
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
V = 5.0V
CE
I = 100 A, R = 500
C S
I = 1.0 mA
R = 200
C
S
I = 50 A
R = 1.0 k
C
S
I = 0.5 mA
R = 200
C
S
k
Noise Figure vs Source Resistance
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
N
F
-
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
I = 100 A
C
I = 1.0 mA
C
S
I = 50 A
C
I = 5.0 mA
C
-
D
E
G
R
E
E
S
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h
-
C
U
R
R
E
N
T
G
A
I
N
(
d
B
)
V = 40V
CE
I = 10 mA
C
h
fe
f
e
Turn-On Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
T
I
M
E
(
n
S
)
I = I =
B1
C
B2
I c
10
40V
15V
2.0V
t @V = 0V
CB d
t @V = 3.0V
CC r
Rise Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
R
I
S
E
T
I
M
E
(
n
s
)
I = I =
B1
C
B2
I c
10
T = 125C
T = 25C
J
V = 40V
CC
r
J
2
N
3
9
0
4
/
M
M
B
T
3
9
0
4
/
P
Z
T
3
9
0
4
NPN General Purpose Amplifier
(continued)
2
N
3
9
0
4
/
M
M
B
T
3
9
0
4
/
P
Z
T
3
9
0
4
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
S
T
O
R
A
G
E
T
I
M
E
(
n
s
)
I = I =
B1
C
B2
I
c
10
S
T = 125C
T = 25C
J
J
Fall Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
F
A
L
L
T
I
M
E
(
n
s
)
I = I =
B1
C
B2
I c
10
V = 40V
CC
f
T = 125C
T = 25C
J
J
Current Gain
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h
-
C
U
R
R
E
N
T
G
A
I
N
V = 10 V
CE
C
f
e
f = 1.0 kHz
T = 25 C
A
o
Output Admittance
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
O
U
T
P
U
T
A
D
M
I
T
T
A
N
C
E
(
m
h
o
s
)
V = 10 V
CE
C
o
e
f = 1.0 kHz
T = 25 C
A
o
Input Impedance
0.1 1 10
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
I
N
P
U
T
I
M
P
E
D
A
N
C
E
(
k
)
V = 10 V
CE
C
i
e
f = 1.0 kHz
T = 25 C
A
o
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