AP4511GM-HF

Halogen-Free Product

Advanced Power Electronics Corp.

Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS Compliant & Halogen-Free
SO-8
S1 D1 D2 D1 D2

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CH BVDSS RDS(ON) ID

G2 S2 G1

35V 25m 7A -35V 40m -6.1A

P-CH BVDSS RDS(ON) ID

Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

D1

D2

G1 S1

G2 S2

Absolute Maximum Ratings

Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3

Rating N-channel 35 +20 7 5.7 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -35 +20 -6.1 -5 -30

Units V V A A A W W/

Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range

Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3

Value 62.5

Unit /W 1 201108022

Data and specifications subject to change without notice

AP4511GM-HF
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj

Parameter Drain-Source Breakdown Voltage

Test Conditions VGS=0V, ID=250uA

Min. 35 1 -

Typ. 0.02 18 29 9 11 3 6 12 7 22 6 830 150 110 1.2

Max. Units 25 37 3 1 25 +100 18 1330 1.8 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF

Breakdown Voltage Temperature Coefficient Reference to 25 , ID=1mA

RDS(ON)

Static Drain-Source On-Resistance 2

VGS=10V, ID=7A VGS=4.5V, ID=5A

VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg

Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current

VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=35V, VGS=0V VGS=+20V, VDS=0V ID=7A VDS=28V VGS=4.5V VDS=18V ID=1A RG=3.3,VGS=10V RD=18 VGS=0V VDS=25V f=1.0MHz f=1.0MHz

Drain-Source Leakage Current (T j=70oC) VDS=28V, VGS=0V

Gate-Source Leakage Total Gate Charge

2

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2

Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2

Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V dI/dt=100A/s

Min. -

Typ. 18 12

Max. Units 1.2 V ns nC

Reverse Recovery Time

Reverse Recovery Charge

AP4511GM-HF
P-CH Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj

Parameter Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Test Conditions VGS=0V, ID=-250uA Reference to 25 ,ID=-1mA VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-35V, VGS=0V
o

Min. -35 -1 -

Typ. -0.02 32 50 9 10 2 6 10 6 26 7 690 165 130 5.2

Max. Units 40 60 -3 -1 -25 +100 16 1100 7.8 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF

RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg

Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2

Drain-Source Leakage Current (Tj=70 C) VDS=-28V, VGS=0V

VGS=+20V, VDS=0V ID=-6A VDS=-28V VGS=-4.5V VDS=-18V ID=-1A RG=3.3,VGS=-10V RD=18 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2

Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2

Test Conditions IS=-1.7A, VGS=0V IS=-6A, VGS=0V dI/dt=-100A/s

Min. -

Typ. 20 12

Max. Units -1.2 V ns nC

Reverse Recovery Time

Reverse Recovery Charge

Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

AP4511GM-HF
N-Channel
50 50

T A = 25 o C
40

ID , Drain Current (A)

30

ID , Drain Current (A)

10V 7.0V 5.0V

T A = 150 o C
40

10V 7.0V 5.0V

30

4.5V
20

20

4.5V

10

V G =3.0V

10

V G =3.0V

0 0 1 2 3 4 5

0 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

40

1.8

ID=5A
35

1.6

T A =25 o C Normalized RDS(ON)

1.4

ID=7A V G =10V

RDS(ON) (m )

30

1.2

1.0

25 0.8

20
2 4 6 8 10

0.6 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V)

T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature

1.5

5 1.3

Normalized VGS(th) (V)

IS(A)

T j =150 o C
3

T j =25 o C

1.1

0.9

0.7 1

0 0 0.2 0.4 0.6 0.8 1 1.2

0.5 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V)

T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

4

AP4511GM-HF
N-Channel
f=1.0MHz
12 1000

10

I D =7A V DS =28V

C iss

VGS , Gate to Source Voltage (V)

C (pF)

C oss
100

C rss

0 0 5 10 15 20 25

10 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC)

V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

1
Duty factor=0.5

Normalized Thermal Response (Rthja)

0.2

10

10us 1ms

0.1

0.1

ID (A)

0.05

10ms 100ms
0.1

0.02

0.01

PDM 0.01
Single Pulse

t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135o C/W

T A =25 o C Single Pulse

1s DC

0.01 0.1 1 10 100

0.001 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

30

V DS =5V T j =25 o C ID , Drain Current (A)

20

VG
T j =150 o C

QG 4.5V QGS QGD

10

Charge
0 0 2 4 6 8

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

AP4511GM-HF
P-Channel
50 50

T A = 25 C
40

-10V -7.0V
40

T A = 150 C -ID , Drain Current (A)

-10V -7.0V

-5.0V -ID , Drain Current (A)

30

-4.5V

30

-5.0V -4.5V

20

20

V G = - 3.0V
10

10

V G = - 3.0V

0 0 1 2 3 4 5

0 0 1 2 3 4 5

-V DS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

60

1.4

55

I D = -4 A T A =25 o C
1.2

I D =-6A V G =-10V Normalized RDS(ON)

RDS(ON) (m)

50

45

1.0

40

0.8

35

30
2 4 6 8 10

0.6 -50 0 50 100 150

-V GS ,Gate-to-Source Voltage (V)

T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature

1.5

Normalized -VGS(th) (V)

1.3

1.1

-IS(A)

T j =150 o C

T j =25 o C

0.9

0.7 1

0 0 0.2 0.4 0.6 0.8 1 1.2

0.5 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V)

T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

6

AP4511GM-HF
P-Channel
12 10000

f=1.0MHz

10

I D = -6 A V DS = - 28V

-VGS , Gate to Source Voltage (V)

C (pF)

1000

C iss

C oss C rss

0 0 5 10 15 20 25

100 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC)

-V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

Normalized Thermal Response (Rthja)

Duty factor=0.5

10

100us 1ms

0.2

0.1

0.1

-ID (A)

0.05

10ms 100ms

0.02 0.01

PDM 0.01
Single Pulse

t T
Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W

0.1

T c =25 C Single Pulse

1s DC

0.01 0.1 1 10 100

0.001 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

30

V DS =-5V -ID , Drain Current (A) T j =25 o C

20

VG
T j =150 o C

QG -4.5V QGS QGD

10

Charge
0 0 2 4 6 8

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform