SEMICONDUCTOR

TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
B

2N3906
EPITAXIAL PLANAR PNP TRANSISTOR

Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. Complementary to 2N3904.
L M
1 2 3 F
H

FEATURES

N K D G E

DIM A B C D E F G H J K L M N

MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00

1. EMITTER 2. BASE 3. COLLECTOR

MAXIMUM RATING (Ta=25

CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25

)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -40 -40 -5 -200 -50 625 1.5 150 -55 150 UNIT V V V mA mA mW W

TO-92

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2N3906
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage SYMBOL ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=-5V, IC=-0.1mA, Rg=1k , f=10Hz 15.7kHz
Vout V in 275

TEST CONDITION VCE=-30V, VEB=-3V VCE=-30V, VEB=-3V IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VBE=-0.5V, IC=0, f=1MHz

MIN. -40 -40 -5.0 60 80 100 60 30 -0.65 250 2.0

TYP. -

MAX. -50 -50 300 -0.25

UNIT nA nA V V V

V -0.4 -0.85 V -0.95 4.5 10 12 10 400 60 4.0 dB MHz pF pF k x10-4

Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure

VCE=-10V, IC=-1mA, f=1kHz

1.0 100 3.0 -

Delay Time

td

10k

C Total 4pF

35

Rise Time Switching Time

tr

0.5V -10.6V 300ns

VCC =-3.0V 0 t r ,t f < 1ns, Du=2%

35 nS

Vout V in 275

Storage Time

tstg

10k 1N916 or equiv.

C Total 4pF

225

Fall Time

tf

9.1V -10.9V 20s

VCC =-3.0V 0 t r ,t f < 1ns, Du=2%

75

* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.

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2N3906

I C - VCE
COLLECTOR CURRENT I C (mA) -100 -80 -60 -40 -20 0
-1 -0.9 -0.8

h FE - I C
1k DC CURRENT GAIN h FE 500 300
Ta=125 C Ta=25 C Ta=-55 C COMMON EMITTER VCE =-1V

-0.7 -0.6 -0.5 -0.4 -0.3 -0.2 IB =-0.1mA COMMON EMITTER Ta=25 C

100 50 30

-1

-2

-3

-4

10 -0.1

-0.3

-1

-3

-10

-30

-100

-300

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT I C (mA)

VBE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -5 -3
COMMON EMITTER I C /I E =10

VCE(sat) - I C
-1 -0.5 -0.3
COMMON EMITTER I C /I B =10

-1 -0.5 -0.3

Ta=-55 C Ta=25 C Ta=125 C

-0.1 -0.05 -0.03

Ta=1

25 C
Ta=25 C Ta=-55 C

-0.1 -0.1

-0.3

-1

-3

-10

-30

-100

-300

-0.01 -0.1

-0.3

-1

-3

-10

-30

-100

-300

COLLECTOR CURRENT I C (mA)

COLLECTOR CURRENT I C (mA)

COLLECTOR-EMITTER VOLTAGE VCE (V)

I C - VBE
COLLECTOR CURRENT I C (mA) -200 -160 -120
5 C Ta=25 C Ta=55 C

VCE - I B
-1.0 -0.8
IC =1mA

COMMON EMITTER VCE =-1V

IC =10mA

I C =30mA

-0.6 -0.4 -0.2

-40 0

Ta=12

-80

-0.4

-0.8

-1.2

-1.6

0 -0.001

COMMON EMITTER Ta=25 C

-0.01

-0.1

-1

I C =100mA

-10

BASE-EMITTER VOLTAGE V BE (V)

BASE CURRENT I B (mA)

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2N3906

50 30 CAPACITANCE C ob (pF) C ib (pF)

COLLECTOR POWER DISSIPATION PC (mW)

C ob - VCB , C ib - VEB
f=1MHz Ta=25 C

Pc - Ta
700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175

10 5 3
C ib

C ob

1 0.5 -0.1 -0.3 -1 -3 -10 -30

REVERSE VOLTAGE V CB (V) V EB (V)

AMBIENT TEMPERATURE Ta ( C)

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