MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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Amplifier Transistors
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER

P2N2222A

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

CASE 2904, STYLE 17 TO92 (TO226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO ICEO IBEX 0.01 10 10 10 20 nAdc nAdc nAdc 40 75 6.0 10 Vdc Vdc Vdc nAdc Adc

Motorola SmallSignal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996

P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 35 50 75 35 100 50 40 VCE(sat) VBE(sat) 0.6 1.2 2.0 0.3 1.0 Vdc 300 Vdc

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product(2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) fT Cobo Cibo hie 2.0 0.25 hre hfe 50 75 hoe 5.0 25 rbCc NF 35 200 150 4.0 ps dB 300 375 8.0 4.0 8.0 1.25 X 10 4 300 8.0 25 MHz pF pF k

mmhos

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) td tr ts tf 10 25 225 60 ns ns ns ns

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

P2N2222A
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V +16 V 0 2 V 1.0 to 100 s, DUTY CYCLE 2.0% 1 k < 2 ns 200 +16 V 0 CS* < 10 pF 14 V < 20 ns 1k 1N914 4 V CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% + 30 V 200

Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.

Figure 1. TurnOn Time

Figure 2. TurnOff Time

1000 700 500 hFE , DC CURRENT GAIN 300 200

TJ = 125C

25C 100 70 50 30 20 10 0.1 55C VCE = 1.0 V VCE = 10 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k

Figure 3. DC Current Gain

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

1.0 TJ = 25C 0.8

0.6

IC = 1.0 mA

10 mA

150 mA

500 mA

0.4

0.2

0 0.005

0.01

0.02 0.03

0.05

0.1

0.2

0.3 0.5 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0

10

20

30

50

Figure 4. Collector Saturation Region

Motorola SmallSignal Transistors, FETs and Diodes Device Data

P2N2222A
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 ts = ts 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C

t, TIME (ns)

tf

Figure 5. Turn On Time

Figure 6. Turn Off Time

10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE

10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A 100 A 500 A 1.0 mA

6.0

6.0

4.0

4.0

2.0

2.0

0 0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

20

50 100

0 50

100 200

500 1.0 k 2.0 k

5.0 k 10 k 20 k

50 k 100 k

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

Figure 8. Source Resistance Effects

30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1

500 VCE = 20 V TJ = 25C

300 200

100 70 50 1.0

0.2 0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)

20 30

50

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 9. Capacitances

Figure 10. CurrentGain Bandwidth Product

Motorola SmallSignal Transistors, FETs and Diodes Device Data

P2N2222A
1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVB for VBE RqVC for VCE(sat) +0.5

0.2

Figure 11. On Voltages

Figure 12. Temperature Coefficients

Motorola SmallSignal Transistors, FETs and Diodes Device Data

P2N2222A
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43

A R P
SEATING PLANE

L K D

X X G H V
1

C N N

SECTION XX

DIM A B C D F G H J K L N P R V

CASE 02904 (TO226AA) ISSUE AD

STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER

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P2N2222A/D Motorola SmallSignal Transistors, FETs and Diodes Device Data

*P2N2222A/D*