$GYDQFHG 3RZHU 026)(7

FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current: 10A (Max.) @ VDS = 60V Lower RDS(ON): 0.020 (Typ.)

IRFZ44
BVDSS = 60 V RDS(on) = 0.024 ID = 50 A
TO-220

1 2 3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25C) Continuous Drain Current (TC=100C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (3) (1)

Value 60 50 35.4 200 20 857 50 12.6 5.5 126 0.84 - 55 to +175

Units V A A V mJ A mJ V/ns W W/C

C 300

Thermal Resistance
Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.19 -62.5 C/W Units

Rev. B

1999 Fairchild Semiconductor Corporation

IRFZ44
Electrical Characteristics (TC=25C unless otherwise specified)
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units 60 -2.0 -----------------0.063 ------32.6 590 220 20 16 68 70 64 12.3 23.6 --4.0 100 -100 10 100 0.024 -680 255 40 40 140 140 83 --nC ns A V V nA

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Test Condition VGS=0V,ID=250A

V/ C ID=250A VGS=20V VGS=-20V VDS=60V

See Fig 7

VDS=5V,ID=250A

VDS=48V,TC=150C VGS=10V,ID=25A VDS=30V,ID=25A

(4) (4)

1770 2300 pF

VGS=0V,VDS=25V,f =1MHz

See Fig 5
VDD=30V,ID=50A, RG=9.1

See Fig 13
VDS=48V,VGS=10V, ID=50A

(4) (5)

See Fig 6 & Fig 12 (4) (5)

Source-Drain Diode Ratings and Characteristics

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
(1) (4)

Min. Typ. Max. Units --------85 0.24 50 200 1.8 --A V ns C

Test Condition Integral reverse pn-diode in the MOSFET TJ=25C,IS=50A,VGS=0V TJ=25C,IF=50A diF/dt=100A/s
(4)

Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=0.4mH, IAS=50A, VDD=25V, RG=27, Starting TJ =25C (3) ISD 50A, di/dt 350A/ s, VDD BV DSS , Starting TJ =25C (4) Pulse Test : Pulse Width = 250s, Duty Cycle 2% (5) Essentially Independent of Operating Temperature

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Fig 1. Output Characteristics
VGS

IRFZ44
Fig 2. Transfer Characteristics
2 1 0

2 1 0

Top :

ID , Drain Current [A]

ID , Drain Current [A]

15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V

1 1 0

1 1 0

1 7 5 oC
0 1 0

2 5 oC

@N o t e s: 1 .2 5 0 s P u l s eT e s t 2 .T 5 oC C =2
0 1 0 -1 1 0

-5 5 oC 1 0
1 -1 1 0

@N o t e s: 1 .V GS = 0 V 0V 2 .V DS = 3 3 .2 5 0 s P u l s eT e s t 6 8 1 0

1 0

VDS , Drain-Source Voltage [V]

VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

0 . 0 4

Fig 4. Source-Drain Diode Forward Voltage IDR , R eve rs eD ra in Cu rr ent [A]

2 1 0

RDS(on) , [ ] Dr ainSour ce O n-Re sis tanc e

0 . 0 3

V 0V GS = 1

0 . 0 2

1 1 0

0 . 0 1

V 0V GS = 2 @N o t e :T 5 oC J =2

1 7 5 oC 2 5 oC
0

@N o t e s: 1 .V GS = 0 V 2 .2 5 0 s P u l s eT e s t

0 . 0 0 0

4 0

8 0

1 2 0

1 6 0

2 0 0

2 4 0

1 0 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 2 . 2 2 . 4 2 . 6 2 . 8 3 . 0

I in C urre nt [A] D , Dra Fig 5. Capacitance vs. Drain-Source Voltage

3 5 0 0 C h o r t e d) iss= C gs+ C gd ( C ds= s C oss= C ds+ C gd C rss= C gd

VSD , S our ce -Dr ai n Vol ta ge [ V] Fig 6. Gate Charge vs. Gate-Source Voltage

2 8 0 0

1 0

V 2V DS = 1 V 0V DS = 3 V 8V DS = 4

2 1 0 0

C oss

VGS , Gate-Source Voltage [V]

C iss

Capacitance [pF]

1 4 0 0 C rss 7 0 0

@N o t e s: 1 .V GS = 0 V 2 . f =1 M H z

@N o t e s :I 0 . 0A D =5 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0

00 1 0

1 0

VDS , Drain-Source Voltage [V]

QG , Total Gate Charge [nC]

IRFZ44
Fig 7. Breakdown Voltage vs. Temperature
1 . 2 2 . 5

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Fig 8. On-Resistance vs. Temperature

BVDSS , (Normalized) Drain-Source Breakdown Voltage

1 . 1

RDS(on) , (Normalized) Drain-Source On-Resistance

2 . 0

1 . 0

1 . 5

0 . 9

@N o t e s: 1 .V GS = 0 V 5 0 A 2 .I D =2 5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5
o

1 . 0

@N o t e s: 1 .V 0V GS = 1 2 5A 2 .I D= 5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 2 0 0

0 . 8 7 5

1 5 0

1 7 5

2 0 0

0 . 5 7 5

TJ , Junction Temperature [ C]

TJ , Junction Temperature [oC]

Fig 9. Max. Safe Operating Area

3 1 0

Fig 10. Max. Drain Current vs. Case Temperature

6 0

O p e r a t i o ni nT h i sA r e a i sL i m i t e db y R DS(on) 1 0 s 1 0 0 s 1m s 1 0m s

ID , Drain Current [A]

1 0

ID , Drain Current [A]

5 0

4 0

1 1 0

D C

3 0

2 0

0 1 0

@N o t e s: 5 oC 1 .T C =2 2 .T 7 5 oC J =1 3 .S i n g l eP u l s e

1 0

-1 1 0 0 1 0

1 1 0

2 1 0

0 2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

1 7 5

VDS , Drain-Source Voltage [V]

Tc , Case Temperature [oC]

Fig 11. Thermal Response

Thermal Response
100 D=0.5 @ Notes : 1. Z J C (t)=1.19 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t)
PDM

0.2 10- 1 0.1 0.05

Z JC(t) ,

0.02 0.01

single pulse

t1 t2

10- 2 - 5 10

10- 4

10- 3

10- 2

10- 1

100

101

t1 , Square Wave Pulse Duration

[sec]

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Fig 12. Gate Charge Test Circuit & Waveform

IRFZ44

Current Regulator
50k 12V 200nF 300nF

Same Type as DUT

VGS Qg
10V

VDS VGS DUT

3mA

Qgs

Qgd

R1
Current Sampling (IG) Resistor

R2
Current Sampling (ID) Resistor

Charge

Fig 13. Resistive Switching Test Circuit & Waveforms

RL Vout Vin RG DUT Vin 10V

td(on) t on tr td(off) t off tf 10%

Vout VDD
( 0.5 rated VDS )

90%

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

LL VDS
Vary tp to obtain required peak ID

BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp

ID

RG DUT 10V
tp

ID (t) VDS (t) Time

IRFZ44
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

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DUT

+ VDS --

IS L Driver RG VGS
Same Type as DUT

VGS

VDD

dv/dt controlled by RG IS controlled by Duty Factor D

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

Vf

VDD

Body Diode Forward Voltage Drop

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