Sentaurus TCAD Training for

CMOS Application
s y n o p s y s ~
Predictable Success
Section 1. Course Outline
Sentaurus TeAD Overview
Sentaurus Workbench
Sentaurus Process 10 & 20
Tecplot SV
Sentaurus Structure Editor - Building Meshes
Sentaurus Device I-V simulation
Inspect
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Section 2. Course Outline
20/30 Sentaurus Structure Editor
Ligament introduction
C-V Device Simulation
Breakdown Device Simulation
90nm nMOSFET Exercise
pMOSFET Device Exercise
SolvNet Resources
SolvNet Introduction
2D Strained Silicon 45nm CMOS Reference Flow Demo
3D nMOSFET Demo
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reAD: What's it used for?
TCAD is used to develop and
semiconductor technologies
Designers focus on the chip
TCAD users focus on the transistor!
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Putting Simulation to Work
You can learn to fly a jet by
actually flying one at great
expense and risk
Or you can use a flight
simulator at a fraction of the
price and a lot less risk I!!
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Simulating Semiconductor Manufacturing
With TeAD, engineers simulate the
process fabrication flow and resulting
electrical behavior
RF
00: substrate
TCAD Application Areas
Opto
'LED, LASER
'Image sensor
Photodetector
Solar cell
'High-speed device
Compound semiconductor
Emitter
Process Gate oxide
3nm
Poly gate deposition
Gate formation
100 nm gate length
Halo implant
BF
2
, 40 keY, 8e12, 35
deg, quad
SID extension
As, 5 keY, 5e14, 0 deg
SID extension anneal
1050 degC, 3 s
De,, Vth, lon, loft ....... .
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and many types of customers
Research/University
Research Labs, Professors,
Students
Process, Device, Interconnect
Military/Government
Research Labs, Government
Agencies
Device, Process,
Interconnect, C&E
10M
'c,',
,i
Foundry
TCAD, R&D,Tech; Dev.,
Production
Process; Device,
Interconnect, TFM, C&E
Fabless
Foundry Interface; Device
Modeling, Library Development
Interconnect, Device, Process
c
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Sentaurus Product Family
Flexible Framework Environment
Advanced Visualization
20/30 Process Simulation
Calibration Library
Structure Editor Interface
20/30 Oevice Simulation
Structure Editor and Mesher
Application Specific Options
Process Compact Models
Based on Calibrated Flow
Links Process Variation and
Device Performance
Integrated TCAD Flow from Development to Manufacturing
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Benefits of Using TCAD
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The MOSFET is Getting a Face Lift!
Gate insulator
Si02/HiK
Leakage
Trapping
interface
Gate
Work function Channel
Depletion Mobility
Raised SID
Material
Activation
Diffusion
SID extension
Activation
Junction (USJ)
STI
Stress
Device Scaling = More Simulation Needed
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Strained Silicon
Stress Distribution in a PMOS with SiGe
300
!l
C 250
<JJ
E
2l 200
c
<U
- 150
<JJ
g 100
:0
o
::;; 50
Experiment Set 1
Experiment Set 2
"" ' 1st order piezo model
" 2nd order piezo model
"'. - --4 6-band-kp Monte Carlo
,

Essential for 65nm development and
beyond
Provides key insight into physical
effects
-2000 -1500 -1000 -500
Stress (MPa)
Behavior of various models for high stress,
Experimental data from L Shifren ot aI, Appl,
Phys, Lett., vol, 85, pp, 6188-6190, 2004,
o
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Atomistic Effects
Discrete Dopant
Distributions
Electron Density in
Sen taurus Device
10'
0.2 0.4 0.6 0.8
Gate Voltage (V)
Statisticallds-Vgs
Physical basis for simulating emerging effects:
Random Doping Fluctuation (RDF)
Line Edge Roughness (LER)
SON OS Device Structure
Silicon Nitride - __
.7 11m
2D Mesh Generation
2301 vertices
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Image Sensor Pixel
Microlens
N
-2 -I o
y
3D to 2D cut to see the buried photodiode
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Omega FinFET
Sentaurus Device simulation using Quantum Transport Model
Omega FinFET with
electron current streamlines
Run-time statistics:
13000 nodes
Single-carrier quantum transport
95 CPU minutes
< 1 GB RAM
Electron concentration at center of the channel
Red: > 10
19
cm-
3
Blue: < 10
18
cm-
3
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Framework - SWB
Provides a GUI-based simulation
environment
Organizes simulation projects, runs
and results
Allows large Design of Experiment
(DOE) and statistical analysis
Manages job scheduling & network
computing
Enables interactive visualization
and analysis of simulation results
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I
reAD Product Architecture
Sentaurus Device Editor
Sentarus Workbench
/
Mesh
Process Simulation


Models wafer fabrication steps
Implantation, diffusion, oxidation &
lithography models are calibrated and
highly predictive
Etching and deposition are typically
modeled geometrically
Starts from flow description and
layout
Sentaurus Device
E
~ 0.0004
~
5
~ 00002
~
/
Drain Voltage {Vi
..........
PCM Studio
t. l .. _. L L t.t
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TCAD process flow editor
oo.sut6-trille
90nm nFET
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I Structure Editor
3D Emulation
From layout and geometrical
photo, etch, & deposition to
generate 3D structure.
20 and 3D iterative editor
Device Simulation
Models the electrical, optical,
mechanical & magnetic behavior of ' ~
semiconductor devices
Simulation is typically performed
on structures created by process
simulation
Modes of simulation
Static, time-dependent, large and
small signal frequency dependent
and noise modeling
Highly accurate CAD models can be
extracted from device simulation
results
Intuitive user interface
Interactive scripting
record GUI actions
type/paste script command
easy to debug
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Simulated current density and
flow lines in 100nm device
"./
Simulated electrical
characteristics
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PCM Studio
PCM acts as a link between the Yield Management
System (YMS) and TCAD
PCM from TCAD
In-process Metrology and Device Characteristics from
Manufacturing
Graphical & Statistical analysis
Visualization of experimental data
Visualization of process-device relations
Algorithmic analysis
Reverse analysis
Feed-forward analysis
Process Window analysis
.-------
.... i
:7
.
j 1 j . .I: .'. i J r .I"
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rCAD Consulting and Engineering
Dedicated team of highly proficient engineers with
long professional experience
collaboration with the Synopsys software
'Ohlf:/,Loo,r
1E21 :-.... I$"Y:FU.>OP'
1 :,,:!.. ..
lE20 _$'-,,",5.1041
i lE19' "S::
g ....
engmeers il lE18 '_ -
Close collaboration with customers in consulting and
engineering projects 0 10 O:;lh(n:, 40
Service project examples
Calibration
Process analysis and optimization
Difficult simulation types, such as 3D, full-chip,
SEU/SER, ESD
Customer specific technology templates
Customer specific training and know-how transfer
Model development and integration
Software integration: TCAD FabLink
Dedicated engineering projects
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Synopsys reAD
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WMj,a;h' (a GUI tool to assemble process flow and layout data,
n then translate to the input file of SProcess)
UWMi**j==========+------.
n
<===:> Emittitl
n 1L---__ --1
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Sentaurus Workbench
15
Node Information


P<,


15 Qi1Ect/Jf

\.""""" (,jiO ..
.. --..--.-.. .... ..
Noo. 10
Toot
5.",
HaIoEr>e/W
V"'"'
Slelus::
I-
Oae: m42:23Ocl2G2007
HOlt !v.,().HcadJ3
"'.
211
NodoJ;lochd;' fV


l> l.3S5e-Ol
Yow<-
.. ....
j lf: 1{
1><;
! Ygox: 1{
i To" It __ .,, ____ ._.<
J H-*'DoseAlel)
abEneI!B,,15
J
_:1
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Online Manuals and Training Material
S ... _ ... F ...... .... " ..".. :"'''..".. ..... ..
""'1 ...... )*""''''' ........ .tm.. .... I" .. "H ........ _"
U;;"''''<'III> ThO l.-.",.n...
.. ......... , .. ",a
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Basic Operation
Attach 1 Detach folders
Copy 1 Delete projects
Clean up 1 Pre-process 1 Select nodes / Run projects 1
Abort projects
View Output Results
Export (tar) 1 Import (tar) projects
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Outline
Sentaurus TCAO coordinate systems
Script file setup sequence
10 example
20 example
Implement external variable on Sentaurus Workbench
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Sentaurus TCAD Coordinate Systems
(default setting)
0.2
T'""
I
0: E 0
02-
.......... (f)
~ ~ 02
0.4
SProcess
02 0.4
Y-axis (urn)
[1,-1,0] .....
Silicon miller indices
0.2
T'""
I
~ E 0
o 2-
.......... (f)
I . ~ 0.2
t >-
0.4
Tecplot, SDE, SDevice
o
X-axis (urn)
[ 1,-1,0] .....
0.5
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Coordinates in 3D
Simulation CCJxdinates Vicualization Coordina.tes
3D
J!
"'\
'\
z y
x
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Wafer Coordinate & Slice Angle
z,
x"
Figure 12 Wafer coordinate system
Y,
I
___
Z,
". > .. :(
, .,/
/

z,
Figurt! 14 Default simulilboll coordinate lS}'slem (slice . lflgla = -00) Figure 13 Slmul41ion coordiOuto system {slk:9.angle '" 45)
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Script File Setup Sequence
Setup initial mesh
Define initial simulation domain
Initialize simulation & define substrate condition
Setup process flow
Oxidation / Deposition / Etching / Implantation / Annealing
Rebuild mesh at appropriate steps
Define electrodes
Save full structure
Extract parameters
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1D Example
Copy project "1 D_SProcess" from training_library
Refer to the command file of example "1 D _ SProcess"
Check 1 D doping profile by INSPECT
Output file introduction
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I
, I
I
Reference: SProcess, p34 - Oxide
Thickness
Meauring oxide thickness:
Select z=Boron
layers
{ Top Bottom
{-6.43e-03 4.11 e-03
{ 4.11 e-03 2.00e+OO
Integral
1.54e+09
1.98e+11
Integral Boron
Concentration
Material}
Oxide}
Silicon}
final oxide thickness is 4.11 nm + 6.43 nm = 10.54 nm
Reference: SProcess, p734 I p672 I
p741 I p775 I p98 - select I layers I
SetPlxList I WritePlx I Datasets
Select
Selects the plot variable for the postprocessing routines
Layers
Prints material interfaces and integrated data field values
SetPlxList
Sets a list of solution and term names to be passed to
WritePlx command
WritePlx
Writes a 10 pix file.
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2D Example
Copy project "20_SProcess" from training_library
Refer to the command file of "20 SProcess"
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2D Example Process Flow
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I
I I
2D Example Mesh Setting
Extract Parameters
Ygox (X coordinate of oxide/silicon interface)
Ypol (X coordinate of POLY/oxide interface)
Tox (gate oxide thickness) = Ygox-Ypol
Lgeff (effective channel length) = 2*Xgd
Xj (Source/Drain junction depth)
0.1
0.2
Ocp,["t"}COil:.e!lll<lI,yNNelh!Ntf; teln- -J)
~ .) 4 E ~ 2 0
, ')'OE+ 17
. 27E .. 14
--64E.ll
Ii : ~ : : : ;
0.4
c=J
0.6
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Implement External Variables on SWB
copy 2D _ SProcess > clean up > add parameters> modify command
file> clear up & renumber the experiment tree
I Add external parameters on workbench I
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Implement External Variables on SWB
copy 2D _ SProcess > clean up > add parameters> modify command
file> clear up & renumber the experiment tree
Link external variables to internal variables
#--- set variable ---------------------
#--- set variable ---------------------
setlgate 0.18
set Igate @Igate@
set ymax [expr $/gateI2+0.4]
set ymax @<lgate/2+0.4>@
set HaloDose 1e13
set HaloDose @HaloDose@
set HaloEnergy 15 set HaloEnergy @HaloEnergy@
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2D Example
Copy project "20_SProcess" from training_library
Refer to the command file of "20 SProcess"
Run & check extracted variables
User exercise: Add the SWB variables & change code
accordingly
Reference: SProcess, p453 ; SWB,
p160 I p95
Advanced Calibration
calibrated to deep-submicron CMOS & SOl technology
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power devices or SiGe devices, may require simpler or
additional diffusion models, which are not yet included in the
Advanced Calibration
# - command
#set <varname> <value> : Sets the value of <varname>
Extracted variables
puts "DOE: <varname> <value>"
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Tecplot SV Overview
Tecplot SV is software for scientific visualization.
Extended by Synopsys to accommodate the special
requirements.
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Specify Equations
Use the Specify Equations dialog to alter data in existing zones_
Data> Alter> Specify Equations __ .
The dialog allows you to change the values of entire variables or
specific data points_
You can also use the dialog to create new variables_
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Generating 1 D Cuts
One-dimensional cuts can be made along either the x or
y coordinate axes.
Slicer >Orthogonal Cut
Normal Direction: .... X
vV
",Z
.J Cut at mouse position
Number of Cuts::
First Cut At
Last Cut At
Merga Zones in Cut
...., Cut Zone By Zone
~ ~ : <, ~ ~ . ,
x {umJ
YlumJ
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Exporting 1 D Cuts to Inspect
Select the frame that includes the cuts to be exported.
File> Export> Inspect Graph ...
:t :eees "fiE . , ...
;.\-.. . ":::G:: ...
---
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Ex 1. Plot 1 D Band Structure (1/7)
Project: /PostBasiclquestionltecp/otitecp/oC 1 dband
Open the IdVg tool's tdr file.
"."<.-;
Iii':,:::
Select
Data> Alter> Specify Equations ...
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Ex 1. Plot 1 D Band Structure (2/7)
Set as follows (The unit is necessary.):
{ Ef } = [V]}
oafa Set In(o._
Remove -<:>'$
1. Input equations
load EquaUons ..
) Save EqualJons ..
I."
Default EquaUon Modifiers
Close
Index Ranges
Start End SkJp



New Var Oala Type
New Val location
Help
1
Abs(Exlrapolalion_eOe/ ..."l
Abs(Extrapolat/on_hOel
AcceptorConceniration
ConducUonBandEnergy
OonorConcenlratlon
Dop!ngConcentraUon [c
ElectroslallcPotentlai [V l
"------' -
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Ex 1. Plot 1 D Band Structure (3/7)
Select Ef. Abs{Exirapolatlon_eOel
Abs(ExtrapolaUon_hDs/ J
AcceplorConcentration
ConductionBandEnergy
DonorConcentratlon [cn
DoplngConcenlration (c
Slicer >Orthogonal Cut, select X, and set
First Cut At 0 in the form.
EleclrostatlcPotential IV ;
,J------.J '
Normal DJrecllon: .. X
v
y
vZ
...J Col at mouse posllion
Numberore"!s:
FlrslCutAI:
Last Cut At: '0, .).3.i:5 4.
.. Merge Zones In Cut
v Cut Zone By Zone
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Ex 1. Plot 1 D Band Structure (4/7)
Keep pressing control key, and select
ConductionBandEnergy and ValenceBandEnergy.
QuaslFermlPolentiai IVI
SpaceChar..9.e lcnr-l1 i1
Vertexlndex
eCurrentoenslty [Aem'
eDensity [Cm"-31
eMoblllly
Ex 1. Plot 1 D Band Structure (5/7)
10 band structure.
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'1.
Cut at X=Oum
Silicon
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Ex 1. Plot 10 Band Structure (6/7)
Select the slice frame, and press
File>Export>lnspect graph ...
__ .. :::;.l. "'"."' .... "-. "_ . ____ . __ . ___.._________ ._.

'.;"U'l
-_ .. _ ..... _ ...... - .-----.. .. .. ...... - ..-
Ex 1. Plot 10 Band Structure (7/7)
Y _[urn] : To X-Axis
ConductionBandEnergy: }
ValenceBandEnergy: To Left Y-Axis
Ef:
------;
.-_.--"--- ". __ ... _,
><--. -;.::-
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Manual Introduction
(refer to Tecplot-SV manual)
Getting started
Starting Tecplot
Main T ecplot window
Loading files
Synopsys sidebar
20/30 Mode
XY Mode
Native Tecplot
Generating cuts
User Exercise
Load Sprocess_2D example
Load 3D example
Perform the x-cut
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For doing 3D cut, go to slicer
=> orthogonal cut (Y-normal
direction), select 3 cuts with
default end points
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Outline
Mesh strategy of MOSFET device simulation
GUI operation on interactive mode
Script a command file for batch mode
[Screen Res should be set to 1 024x870 to accommodate External Profile
Placement Dialog Box]
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Flow of Input and Output in SDE
Intput:
Device Structure
from SProcess
Intput:
Mesh Strategy
}
Output:
Runtime messages
MOSFET Mesh Setup Strategy
(for SDevice Simulation)
Load boundary from previous SProcess output
Define initial mesh for Silicon and PolySilicon
materials
Refine Source/Drain junction mesh
Refine LDD junction mesh
Refine silicon surface region between channel to
o
SID contact 0.5
Define gate oxide mesh
Refine channel mesh
Refine PolySilicon mesh
Load doping profile from previous SProcess output
Define PolyGate (PolySilicon) doping
Output:
structure, doping, mesh
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o 0.5
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MOSFET Mesh Setup Result
(for SDevice Simulation)
Batch Mode
E
2-
>-
Refer to command file "sde_dvs.cmd" of example
0.18um nMOS
Check output files
4/2/2009
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Interactive Mode
Start Structure Editor => type "sde"
Journal on => record the command line of each step
Import boundary file from n4_bnd.tdr
Load sub mesh (geometry and doping data) from n4_fps.tdr
turn off "auto region name", turn on "exact coordinates"
Step by step setup mesh by GUI
Silicon => (0.1, 0.1) / (0.05, 0.1)
Poly => (0.02, 0.05) / (0.01, 0.025)
SO' => (0.09, 0.0) / (0.49, 0.3) => (0.1, 0.03) / (0.006, 0.006)
LOO => (0.05, 0.0) / (0.09, 0.05) => (0.006, 0.006) / (0.005, 0.005)
CtoC => (0.09, -0.002) / (0.49, 0.006) => (99, 0.002) / (66, 0.001)
Gox => (0.0, -0.002681) / (0.09, 0.00065) => (99, 4e-4) / (66, 4e-4)
Channel => (0.0, 0.00065) / (0.09, 0.075) => (0.02, 0.05) / (0.01, 2e-4) / (-1.45, 1.45)
Gate => (0.0, -0.18) / (0.09, -0.002681) => (99, 0.04) / (66, 4e-4) / (0.0, -1.75)
Define PolyGate doping type and concentration (Arsenic 6e19)
Save
Build mesh
Journal off
Check .tdr .jrl
Reference: MeshGen, p72; SDataEx,
p11-15
snmesh <options> project_name
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SMesh automatically adds .bnd and .cmd to the base name
project_name to obtain input file filenames. SMesh creates
the output file project_name_msh.tdr that contains mesh
geometry information and doping information.
In the case of TOR files as input file, special naming rules
apply.
tdx -mtt -x -ren drain=source n@node@_haICmsh n@node@_msh
-mtt: Mirrors TOR geometry and saves the result to another
TOR file
-x: Mirror at xmin
-ren: Rename a region or regions
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The Final Mesh for SDevice
o
0.2
E
2-
>- 004
0.6
0.8
User Exercise
o 0.5
x [urn]

34E.20
3 OE ... 17
2.7E+14
e.ltE.ll
.-1.2Ed5
-14E't-18
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Import command file & go through batch mode
Do the refinement manually as stated in the interactive
mode.
Build the mesh & check result
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The Final Mesh for SDevice
0
0.2
E
2-
0.4
>-
0.6
0.8
o 0.5
X [um)
User Exercise
DopmgConcenlra!lcm !cm-'-31
III 34E.20
',,.-. ;"JOE+- 17
",: 2.7E+ t4
c: -S 4E+ 11
1.2E.1S
-14E ... 18
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Import command file & go through batch mode
Do the refinement manually as stated in the interactive
mode.
Build the mesh & check result
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4/2/2009
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Outline
Flow of input and output in SDevice
Command file introduction
Parameter file introduction
O.18um nMOS Id_Vg example
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38
Flow of Input and Output in SDevice
Input
Device Structure
Command File
File
Input
Models, Parameter, SWeeps
Output:
Runtime messages
"define the input and output files of the simulation"
Electrode {
Output:
IVs. Field
distributions
"define electrical (or thermal) contacts, initial bias condition, special
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}
boundary condition" }
Physics {
"declare physical models" }
Plot {
"specify the solution variables that are to be saved in the Plot file" }
Math {
"options of numeric solver"
Solve {
" set bias sweeps sequence and solve transport models"
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Parameter File
Refer to SDevice manual 2007.12 P .56
Check default parameter file by materials
When parameter file is empty, use default parameters
Reference: SDevice, p56
The parameter file contains user-defined values for
model parameters (coefficients).
The parameters in this file replace the values
contained in a default parameter file models. par.
Model coefficients can be specified separately for
each region or material in the device structure
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40
E
2-
>-
0.2
Refer to 0.18um_nMOS example
Vg=O-1.5v
80-006 ,----------,-8&-005
/
.02 o 02
0.6
x [urn]
Vg{vonj
Vb=Ov
User Exercise
Use 2D_Sprocess example, do:
Add Structure Editor, add "PolyDop" parameter, import
command file
Add Sdevice, add "Vdd", "Vds", import command file, and
specify import parameter
6&-006
20-006
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Run (Result checking will be demo'ed in the next section)
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Outline
GUI interactive mode
Load curve file, plot curves
Edit Plot area, Axes
Create new curve
Formula library - refer to manual 2007.12 P .25,48
Macros - refer to manual 2007.12 P .26,50
Save, Export
Script file batch mode
Record each operation step on interactive mode to generate
a script file.
Script a command file - refer to example 0.18um nMOS
Extract standard parameters of the extraction library
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Reference (Inspect, p48 I p50)
Function Table:
MACRO Example:
The macro ADO is defined as:
<c 1>+ <c 2>
Relum:. II"" .... 0Jr. .... Vallk':-- mtl'J

Retulm tho! Ill>:" retumL-J {odi:ml ..... -n in tl:v!-
r.m.,..:--lt ... : If.\:'t. Z
Rottum,;. tn.!::lI.'I:' Ttl ... rewm..."Il.:1llgkIr.:Jd1a:tl is 21......0 In
tho:-'.I1lt<!'-1I: '1 1.
R ...tun!$ the hyf'<:rt'C"i,: 1ml",cL CtIf\.\ \,:du...", lnu.-.l tlc-
aud I .
R(.u,""tTf' .. tb::lll

This macro adds two curves. The macro prototype looks like:
AOOCURVE>, <CURVE
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Predictable Success
User Exercise
Open Inspect, plot IdNg in log scale, and obtain gm
by getting max(diff(curve))
Create an inspect script by GUI: record, load pit, plot,
save, modify code.
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43
Agenda
Inspect Script Basic
Version A-200B.09
RevO.O
Basic Operations and Script Commands
~ Load pit File: proUoad
~ Create Curve: cv createDS
~ Set Attributes: gr_setAxisAttr; cv_setCurveAttr
~ Extract Variables: cv_compute; ft_scalar
Mathematical Formulas and Macros
~ Mathematical Formulas
~ Macros
Threshold Voltage Extraction
~ Definitions of Threshold Voltage
~ Inspect Script
4/2/2009
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44
Inspect Script
Inspect can be controlled by using a simple scrip language. For
example, a script can load a project (data file), draw curves, and
perform mathematical computations on curves.
A script can be written manually or created automatically by recording
actions performed interactively through the graphical user interface.
Inspect script can extract variables to SWB family table.
Variable Values
- .......... __ ...._ .. _ .... .
FamUyTree
I .
... . ..
.. __ __ --' -. --!.- .. ,-,-====..,.,..-==--..
-----'r; __ --1i-,
.... 0 075 ...... - "0.2'-5-- ...
. 0.01 , 1 0.OB5 If 327' -- . . o.2olf .
. -.... 0 100 ...... 0'3,5 '0' ;"99" ...
oj'io .... 0298 . -. --0 ,'6e'-
. . 0.250' 0257 0.158
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Basic Operations and Script
Commands
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Basic Operations and Script Commands
The basic operations and script commands are
explained:
Load pIt File: proUoad
Create Curves: cv_createDS
Set Attributes: gr _ setAxisAttr; cv _ setCurveAttr
Extract Variables: cv_compute; ft_scalar
A backslash '\' is used to extend a command to multiple
lines if it appears as the last character on the line.
Load pit File - Operation - (1/3)
Is-i?fflj!tiHbfflfttfi,.rlAli vi
Eile; gdit Urve tielp
==:::. ____. ________________.. ____ :;;;;;;;;;:.;;-.--,.-;r:-1< __
Automatically Update Datasets._ r"---"""i 1 -,-----------
lletete Oatasets 1. CliCk" oad Dataset ... "
...................................__ ......_ ......... __........___ .1 .
i
l..O<, Setup... !
Setup_.. 1
.-.-.-.. -...... -.-..................... -. --1
Restore AIL .
sate AIL i
-------------1
,
>l>ort rj
--............. - .. ----.. _ ...... 1
WrtleEPS_ 'I'
WritePS_
Print._ ctrf+p t
..
CtrI+Qj
0.8
0.6
0.4
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46
Load pit File - Operation - (2/3)
ft4$ltMM 6 .. >.2!lJ
I ihJ i 1
IiJ n14_des.plt
[E nlS_des_pTt f
IE n16_des.plt I
n17_des.plt f
III n18_des.plt I'
nlS_des,ptt ., C, .1,.4- 4';
2. Set "Files of type" 4. Click "Open"
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Load pit File - Operation - (3/3)
c .........,.
.---
i 5. name
___::.::::: __ J ...___

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Load pit File - Command -
Load pit file
proj_7oad n2 des.p7L
n2 des 3. 5.
n2_des.plt : the name of the file to load.
n2_des : the arbitrary name user can define for this dataset.
Create Curve - Operation - (1/4)
:;<>;
g' :i--' -,::.. --c-"-,,-c.-c_ ;"'''-
c"..,.'<!'<
-1 ;fCfiCK "Qatasets"
-1
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48
4/2/2009
Create Curve - Operation - (2/4)
"contact"
"OuterVoltage"
_4..G.!i.ck 'To X-Axis"
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Create Curve - Operation - (3/4)
WIT?
5. Selec "contact"
, ,-
"TotaICurrent"
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49
Create Curve - Operation - (4/4)
~ i " " ' - " " " ' " "'i
8. Curv,e Name
~ J
,
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Predictable Success
Create Curve - Command -
cv_createDS Tota7Current Drain \
\ 8.
{n2 des gate OuterVo7tage} \
\ 1. 2. 4.
{n2 des drain Tota7Currentl y
1. 5. 6. 7.
TotalCurrent_Drain : a unique name for the new curve.
{n2_des gate OuterVoltage} : a list of data to use for the x-dataset
{n2_des drain TotalCurrent} : a list of data to use for the y-dataset
y : optional parameter specifying the axis to use; the default is y; the
options are y or y2.
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50
Set Attributes
This section describes the functions that change the
attributes of the axes, curves, and legend.
synopsys"
Predictable Success
Set the Axis Attributes
- Operation: Start -
1 ' 1. Double-click the axis

M',"y,_ I
......:.::-:".::...J _=. ___ ;
.. __ l
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4/2/2009
Set the Axis Attributes
- Operation: Editing Title (1/2)
CUN8t----
68'-05
Color.
3. Change ,j
Font..
2a-05
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PredictabJeSuccess
Set the Axis Attributes
- Operation: Editing Title (2/2)
Be-OS
P:attems. -Scale l1IJe -TIcks:
6e-OS

Color:
49-05
5. Change "Fon
2a-05
----------- LI ___ ="'sa:::ffi,-p_le_te_xt ____ -'
__ _ "
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52
Set the Axis Attributes
- Operation: Editing Scale-
Be-OS
L;
;,
Set the Axis Attributes
- Operation: Editing Pattern (1/2)
8a-OS
10. Click "Patterns" tab
iN.. t
X-Ms !leIl.V-Ms 1 Right Y-AxIs
6e-OS Scale 11tIe' nets
4e-OS
2e-OS
.. OJspta!lX-Ax!s
...) Display VarlIcaJ Una AI x-o
11. Color"
)
0.5
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4/2/2009
Set the Axis Attributes
-- Operation: Editing Pattern (2/2) --
ae-os
12. Click "Patterns" tab
Y-AXI$ Y-AxI& .
tie-OS : PallBms :Scale Title ,Tlcb
... -.--:
...,; Ol$play Vefl!calline At X"O
.-....................... _ ..... .

4e-OS
COlOr: II
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Set the Axis Attributes - Command -
gr_setAxisAttr 2{ {Vg [V77- {aria7 15]- a 8 b7ack 1 \
\ 1. 3. 5. 8. 11. 13.
{aria7 is} a 5 a b7ack
X: a keyword (X, Y, or Y2) specifying an axis.
Vg M : the axis title .
{arial 15} : the font size of the axis title.
0 8 : minimal and maximal values of the axis.
black: the color of the axis.
1 : the width of the axis line.
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4/2/2009
Set the Axis Attributes
- Operation Editing Ticks (1/2)
Sa-OS
Subdivislan'
Type
4(>-05
Ze-OS
16.
05
17. Clic " K"
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Predictable Success
Set the Axis Attributes
- Operation: Editing Ticks (2/2)
hi! L w:Rl2ix:>:;": 2<l
X-AId, : LmlV-AlGs. :Rlgllty-Axis ,
18. Change TiGk b.abehAngle"
Typ. J4;9:-Change
I'
FollL ;
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4/2/2009
Set the Axis Attributes
-- Operation: Changing Log/Lin --
Ss-os we. 2SJ
X-Axi' :lI.J1'lY-MS i.RlghtV-AAi,:
20. Click "Scale"
Min.: r---
6,-05 21.
4e-05
-------..---....-.-----
Za-OS
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Set the Axis Attributes
-- Operation: Editing Font of Title --
iN "_ ',i!.!
X-AxIS; len V-AxIs: Righi.
P"'m, Click
------." ----------....--_ .._--_ ..
....... .... .
Ze-as
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56
Set the Axis Attributes - Command -
gr_setAxisAttr K {Vg [V]} {aria7 1S} 0 8 b7ack 1 \
\
{aria7 1St Q i Q b7ack
16. 18. 19.20. 23.
X : a keyword (X, Y, or Y2) specifying an axis
{arial 15} :the font size of the tick label
0 : the angle at which the tick labels are drawn
5: the number of secondary ticks between the main ticks
black: the color of the axis title
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Set Curve Drawing Attributes
- Operation: Start -
1Ii:1$!===:::=I!II ______

c,J;.Sv-:;,.. ..
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Set Curve Drawing Attributes
..... Operation: Editing General Part .....
2. Click "General" tab
!&.::tJJ
: M."....
.. ...... :
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Set Curve Drawing Attributes
..... Operation: Editing Line Part (1/2)-
4. Click "Line" tab
i2! .... t!!:.i!::!Zl},,::!,i1__
..rastsr .
COIOr. .... a ....... -. _. __ ...... ..
: l1li00l1lil1li:
'-1 n
w,,,,,j 1'00000 l :1
} 5. ChangelW'Color"
............................

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Set Curve Drawing Attributes
-Operation: Editing Line Part (2/2)-
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Set Curve Drawing Attributes
- Operation: Editing Marker (1/4) -
8. Click "Marker" tab
WMti I.!f. 0 29;

9. chaJbe "Shape"
;Sll8. :s:: :
................... ," ... 10. Change
CMorc II U

FII!Q)lot:
.. _ .. ....-.. -.-- ---- ,--_. ... . ------_ .. - .._-_.-
.. -.... jl
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Set Curve Drawing Attributes
- Operation: Editing Marker (2/4) --
o's
Ouh'fl,lQlI3ge M
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Set Curve Drawing Attributes
- Operation: Editing Marker (3/4)-
m t i. .
GIIf>II.al.l.tni! Matkin lln!orpolalklfl

,....._._ ......._._-_ .._--,

Ij
il
12. "Outline Width"
__ J!

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Set Curve Drawing Attributes
- Operation : Editing Marker (4/4) -
__ . ..!91
:lIrIa MarIoor InterpOlaIlOn: !
I
_.
j'JqllilN
!
OutllnilC010f"_. I
13. Change "Fill Color"
...................... c...... .1
( FlUcoloe,. : 'I
: DooD.d ,j
...
. .1
\ ............. _ ... __ ... _--_ .. ---
14. Click "OK"
Set Curve Drawing Attributes
- Command-
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Predictable Success
cv_setCurveAttr Tota7Current Drain IdVg b7ack so7id 1 \
\ 3 5 6 7
square 5. b7ack 1 b7ack
9 10 11 12 13
Tota7Curren'LDrain": the curve name.
IdVg: the curve legend.
b7ack: the color of the curve line.
so 7 i d : the drawing style of the curve line.
3 : the width of the curve line.
square: a keyword for the marker shape.
5: the marker size.
b 7 ack : the color of the marker outline.
1: the width of the marker outline.
b 7 ack : the fill-in color of the marker.
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61
Compute a Scalar Using the Formula
The formula library allows some basic calculations to be
performed on one or more selected curves.
cv_compute "formula" xmin xmax ymin ymax
~ formula: the string with the formula to evaluate.
~ xmin, xmax, ymin, ymax : the range for which the formula is applied.
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Extract Variables
The Inspect command ft_sca 1 ar prints the extracted
value and passes it to Sentaurus Workbench.
Examples:
set maxid [cv_compute "vecmax( <Id" 0 0.5 0 1.0]
fLsca 7 ar i dJT}ax $maxi d
set vt [cv_compute "vecva7x( <Id> , 1e-S)" 0 1.0 0 1.0]
ft_sca7ar Vt $vt
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Extraction Library
The commands provided by this library are used to
extract various parameters from I-V curves. The library is
loaded with the command:
17oad_7ibrary EXTRACT I
Refer to Inspect manual for more information.
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Predictable Success
RF Extraction Library
The commands provided in this library are used to extract
RF parameters from small-signal data. The library is
loaded with the command:
I 1oad_1ibrary RFXI
Refer to Inspect manual for more information.
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Recording Script
A script can be created automatically by recording actions
performed interactively through the graphical user
interface.
To create a script:
}- A Script Name dialog box is displayed, which prompts you to
select or create a script file.
Script> Record> Start
}- After selecting the file name, Inspect starts to store every
operation until recording is stopped. ''''
S
. t R d St n;; ..... RunScnpt Ctr/ ..R 'q. II?
cnp > ecor > ___ ' start. __ [
Add Pau,e j
--:-;--.,-___ Add Breat 1
stop ...J

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Inspect Execution Mode
Inspect has two execution modes: interactive and batch mode. You
can change mode
Right button>Edit Input>Preferences ...
'"n' .......

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Mathematical Formulas and

Predictable Success
Mathematical Formulas (1/2)
Click the New button below the Curves area in the Inspect main
window .
The Create Curve dialog box is displayed. The right pane lists
available
Cur/e1 jWiY-,_,---
5 .. ::'
j MO!:p Cllf'.l1I 'To .. t.sfl Y...to'4 v F1fgr.t V-A>d:
<&0'$. :oe1nh, li:$Ilr,-atL1t;.. e.n. 'Stann, c:",II.. coe, ctt'n. f:rt.


... l,:':C';'JI;k.
ll'I1t1e tlJlTOU!ltleti ltyol.l1lJll
mm; mwo}, CURVftros1: be teplar-I!(t iIo'l!l :'Ittro

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65
Mathematical Formulas (2/2)
vecmax (curve)
>- Maximum y-value.
vecmin (curve)
>- Minimum y-value.
vecvalx (curve, scalar)
>- x-value at a given y
vecvaly (curve, scalar)
>- y-value at a given x
vecmax
veczero (curve)
>- x-value at y = o.
diff (curve)
____
>- Retums the first derivative of the curve.
integr (curve)
>- Retums the integral of the curve.
tangent (curve)
>- Retums the tangent
Macros (1/3)
vecmin
synopsys'
Predictable Success
Macros are predefined commands that can be later recalled. For
example, in Inspect, there is a predefined macro, VT, which
performs the threshold voltage extraction.
Macros

vfI;, Dl'. ......... ...... <In.

"cml.. .....
c ..... ...

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Macros (2/3)
Macro usage:
__ !l'1L*t)fi@i,;
C>. ;;<,,-__._ =.,
Id "5. Vgs (Lg-O.oss urn. Vds..o.OS V)
""'5 .
2e{)5
0.5
Macros (3/3)
3. Select curve_'o",_o ---------
..... 1aDI.fbrmulleCllrHno'''"'
lCOI.oeoofl,asln._.'II""._.Cl>/tcOji.co<,CO<ll.err.
:HIe._.flot>l.noo gam..... JO.lt.Ig ...... a.,loq.IIIqIO.j>O'>< ln
.... h
4. Click "OK"
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Predictable Success
Macro definition can be edited by
Edit>Define Macros ...
MacroUst
1. "VT"
fRnU1
jRon
:IOSS
'iest1
'testtZ
Add fEd"
Delete
Name:
Macro: ivecvaIX(tangent(<:c l>.veczaro(ditr(<C 1 - vecmax(dttfC';'

available (Qrm(..!la commands to create macros are:
acos, acosh, asin .... asinh. atan, atanh# cbrt, ceil, cos, cosh. ert
erfc. 6Xp. fabs .. lloor. gamma, jO, j1 ... Igarnma. 109 .. log10. pow, sin.
sinh. sqrt. tan. tanh, yO, 1'1. dllC lntegr
vecmax, vecmln. vecvalX. vecyaly, tangent, veczera
Use "<c n> as place holders for curves: and -<5 n> for scalar values
In the macros, where n represerrts: the argument used in the macro (n
must start with 1) .
.close
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67
Threshold Voltage Extraction
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Definitions of Threshold Voltage (1/2)
I d Maximum slope of the curve
VT
t
Definition 1
Definition 2

Id
Vg
- - ~ ~ - - - - - - ~ Vg
VT1
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Definitions of Threshold Voltage (2/2)
Macros
VT:
I vecva7x(tangentc1>, veczero(diffcl> - vecmax(diffc1))) , 0.0)
VT1:
I vecva 7x( <cl>, 1.0e-7)
Script functions
VT:
I f_VT curveName xmin xmax ymin ymax
VT1:
I f_VT1 curveName xmin xmax ymin ymax I
Inspect Script (1/4)
set N @node@
set Vd 0.05
set Lgshift @Lgshift@
set Lg [expr 2. O"SLgshift+O. 065]
fLscalar Lg [format %O.3f SLg]
proj_load @plot@ PLT(SN)
cv_createDS IdVg(SN) \
>-xmin, xmax, ymin, ymax,
the range for computing the
result; default values
correspond to the full curve
range.
synopsys'
Predictable Success
"PLT(SN) gaLe OuterVoltage" "PLT(SN) drain TotalCurrent" y
cv_setCurveAttr IdVg(SN) "Id" red solid 2 circle 0 defcolor 1 defcolor
gr_setAxisAUr X {Gate Voltage (V)} 12 {} {} black 1 10 0 5 0
gr_setAxisAttr Y {Drain Current (A/urn)} 12 {} {} black 1 10 0 5 0
gr_setTitleAtLr "Id vs. Vgs (Lg=SLg urn, Vds=SVd V)" 14 center
#- Extraction
#- Calculate the threshold voltage [V]
set vt [f_VT IdVg(SN)]
fLscalar vt [format %O.3f Svt]
set vLl [CVT1 IdVg(SN)]
fLscalar vt1 [format %O.3f SvLl]
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Predictable Success
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69
Inspect Script (2/4)
Set variables:
set
set
set
set
N
Vd
Lgshift
Lg
@node@
0.05
@Lgshift@
[expr 2.0*$Lgshift+0.065]
Inspect Script (3/4)
Load plot file:
I proj_load @plot@ PLT($N)
Create curve:
cv_createDS IdVg($N) \
H
Lgshift
"PLT($N) gate OuterVoltage" "PLT($N) drain TotalCurrent" y
Set curve attribution:
Lg
H
Lgshift
synopsys'
Predictable Success
cv_setCurveAttr IdVg($N) "Id" red solid 2 circle 0 defcolor 1 defcolor
Set axis attributions:
gr_setAxisAtLr X {Gate Voltage (V)} 12 {} {} black 1 10 050
gr_setAxisAttr Y {Drain Current (A/um)} 12 {} {} black 1 10 0 5 0
Set title:
I gr_setTitleAtLr "Id vs. Vgs (Lg=$Lg um, Vds=$Vd V)" 14 center
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Predictable Success
4/2/2009
70
Inspect Script (4/4)
Calculate VT:
Iset vt [f_VT IdVg($N)] I
Export the variable to the Family
Table of Sentaurus Workbench:
Calculate VT1 :
Iset vtl [LVTl IdVg($N)) I
fcsca7ar
...
fcsca7ar
fcsca7ar
Lg [format %0.3f $Lg]
vt [format %0.3f $vt]
vtl [format %0.3f $vtl]
synopsys'
Predictable Success
Ex 1. Threshold Voltage Calculation
Project: IPostBasiclquestionlinspectinmos_rol/off_inspect
Using macros:
>Select batch mode
Edit Input>Preferences ...
Using inspect script:
>Select interactive mode
Edit Input>Preferences ...
>Run.
synopsys'
Predictable Success
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71
synopsys'
Predictable Success
Sentaurus Structure Editor
~ ~ ~ ~ ~ ~
Generating 20 Boundaries
With Online Training Material
s y n o p s y s ~
Predictable Success
4/2/2009
72
4/2/2009
20 Exercise
synopsys'
Predictable Success
Steps
Draw> Exact Coordinates
Draw> Overlap Behavior> New Replaces Old
synopsys'
Predictable Success
73
Regions
Region Material Coordinates
Substrate Silicon (-0.5,0), (0.5, 1.0)
Gate
oxide
Si02 (-0.2 -40e-4), (0.2 0.0)
Nitride
(-0.2 -0.2), (0.2 -40e-4) Si3N4
spacer
Poly gate PolySi (-0.1-0.2), (0.1-40e-4)
Buried
oxide
Si02 (-0.5 0.1), (0.5 0.2)
Edit> Separate Lumps.
Rounding Edges
.... Ix
>'. r:':;-' ;--'.;..:.... -'-' :.....;-:...;......;. >-'--, : . .
) ... , . r "l
',\/Woe; .. -.. .. 1 J
..... :r::-:-. .. -"'.:.-. -.l: ..
llJrtU-<4
D
IAPerture selectl .
Edit> Edit 2D >
Fillet
4/2/2009
synopsys'
Predictable Success
synopsys'
Predictable Success
74
Declare Contacts
""""
"",
3IJ1;tt.!t411)"
S
"" I I "'""
jW)(lOOO
I 0- I il
\ .J
(sdegeo:define-contact-set "source" 4.0 (color:rgb 1.0 0.0 0.0 ) "##")
(sdegeo:define-contact-set "drain" 4.0 (color:rgb 0.0 1.00.0) "##")
(sdegeo:define-contact-set "gate" 4.0 (color:rgb 0.00.0 1.0) "##")
(sdegeo:define-contact-set "substrate" 4.0 (color:rgb 1.0 1.00.0) "##")
(sdegeo:define-contact-set "bodytie" 4.0 (color:rgb 1.0 0.0 1.0 ) "##")
synopsys'
Predictable Success
Set Contact (1)
Contacts> Set Edge(s)
(sdegeo:define-2d-contact (find-edge-id (position -OA 0.0 0.0))
"source")
(sdegeo:define-2d-contact (find-edge-id (position OA 0.0 0.0))
"drain")
(sdegeo:define-2d-contact (find-edge-id (position 0.0 1.0 0.0))
"substrate")
synopsyS'
Predictable Success
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75
Add Vertices
(sdegeo:insert-vertex (position -0.10 0.1 0.0))
(sdegeo:insert-vertex (position -0.05 0.1 0.0))
(sdegeo:define-2d-contact (find-edge-id (position -
0.07 0.1 0.0)) nbodytie
n
)
Define Region as Contact
Select Body
Contacts> Set Region Boundary Edges
Edit> Remove> Region
(sdegeo:set-current-contact-set "gate")
synopsys'
Predictable Success
(sdegeo:set-contact-boundary-edges (find-body-id (position 0.0 -
0.1 0.0)))
(sdegeo:delete-region (find-body-id (position 0.0 -0.1 0.0)))
synopsys'
Predictable Success
4/2/2009
76
Renaming Regions
Select Body
Edit> Change Region Name
(sde:add-material (find-body-id (position 0.0 0.8 0.0 "Silicon" "RSubstrate")
(sde:add-material (find-body-id (position 0.0 0.15 0.0 "Si02" "RBox")
(sde:add-material (find-body-id (position 0.0 0.05 0.0 "Silicon"
"RSiliconepi")
(sde:add-material (find-body-id (position 0.0 -20e-4 0.0 "Si02" "RGateox")
(sde:add-material (find-body-id (position -0.15 -0.1 0.0 "Si3N4"
"RSpacerleft")
(sde:add-material (find-body-id (position 0.15 -0.1 0.0 "Si3N4"
"RSpacerright")
(sde:showattribs "all")
Saving the Model
File> Save Model
(sde:save-model "soifet_bnd
n
)
model geometry - native ACIS format file soifet.sat
Ref/Eval windows and parameters - soifet.scm
DF-ISE format refinement and doping - soifet.cmd
DF-ISE format boundary - soifet.bnd
To use the TOR format for the boundary file:
synopsys'
Predictable Success
(sdeio:save-tdr-bnd (get-body-list) "soifet_bnd.tdr")
synopsys'
Predictable Success
4/2/2009
77
Defining Constant Doping Levels in
Materials
(sdedr:define-constant-
profile "ConsLSilicon"
"BoronActiveConcentration
" 1e+15)
(sdedr:define-constant-
profile-material
"PlaceCD .Silicon"
"ConsLSilicon" "Silicon")

i
; """"""""'"

PlillCeTneotType
0"'""'"
.J
ORog;on .J
Mat"'" I .. oon

CortrtantProfiltDe1inition------------,
Name
Specb I Bor0n.Activ6Concentration

j i
j!

Decay factor 0 On Replace
I Ch", .. ___ I I "'.Ie"-,n! I ;
L..-_______ ------_=-..1
synopsys'
Predictable Success
Defining Constant Doping Levels in
Regions
(sdedr:define-constant-
profile "ConsLEpi"
"BoronActiveConcentration"
1e17)
(sdedr:define-constant-
profile-region
"PlaceCD.Epi" "ConsLEpi"
"R.Siliconepi")
rPlaalmentType---------,
o flef/'Mn
@Atglen I A.SI\Ic:onepl
,CorohlntProllleDefnition------------,
I NMn, 1<-:0;."_,...:",,,________ .
I
lConct:ntnillon
j
Decay FlIC101'
I _""""",eor-"""on . I
Jle+17
1
0 DOn
: I I I'-_""_',_ ..
OR"".,.
lb..-.-.-.-.-..---...--------... ..- .. --.--...--.. --..--.... -...--..-.-...
synopsys'
Predictable Success
4/2/2009
78
Defining Analytic Doping Profiles (1)
Define Baseline
(sdedr:define-refinement-window "BaseLine.Source" "Line" (position -0.80.00.0) (position -0.2 0.0 0.0))
(sdedr:define-refinement-window "BaseLine.Drain" "Line" (position 0.2 0.0 0.0) (position 0.8 0.0 0.0))
(sdedr:define-refinement-window "BaseLine.SourceExt" "Line" (position -0.8 0.0 0.0) (position -0.1 0.0 0.0))
(sdedr:define-refinement-window "BaseLine.DrainExt" "Line" 0.1 0.0 0.8 0.0 0.0))
Junctions Basolino Name start Point EndPoint
BaseUne.Source .(l.80 .(l.20
Dram BaseUne.Orain 020) 0.80)
Qurce extenS10n BaseUne.SourceExt .(l.80) .(l.10)
rain extension BaseUne.OrainExt 0.10 0.80
I
Defining Analytic Doping Profiles (2)
~ 2 ~ - - - - - - - - - - - - - - - - '
Junctions Placement Name Baseline Name ProfiloName
PlaceAP.Source BaseUne.Source Gaussian.SourceOrain
Dram PlaceAP .Drain BaseUne.Drain Gaussian.SourceOrain
ource ExtenSIon PlaceAP .$ourceExt BaseUne.SourceExt Gaussian.SourceOrainExt
Dram Extension PlaceAP.DrainExt BaseUne.OrainExt Gaussian.SourceDrainExt
Profile Name
Peak Peak Junction Junction Lateral
Concontmtion Position Concontnation Depth Factor
Gaussian.SourceOrain x10,g cm--J Dum 10
17
cm-3 0.12um 0.8
aussian.$ourceQrainEx 5x1016 cm-J Dum 1011'cm-J 0.035 m 0.8
~ 1
01
02
03
)-0.4
05
OS
07
08
09
-05 -025
(sdedr:define-analytical-profile-placement "PlaceAP_Source" "Gauss_SourceDrain"
"Baseline. Source" "Positive" "NoRepiace" "Eval")
o
X
025 05
(sdedr:define-gaussian-profile "Gauss.SourceDrain" "PhosphorusActiveConcentration" "PeakPos"
0.0 "PeakVal" 5e19 "ValueAtDepth" 1e17 "Depth" 0.12 "Gauss" "Factor" 0.8)
(sdedr:define-analytical-profile-placement "PlaceAP.Drain" "Gauss.SourceDrain" "BaseLine.Drain"
"Positive" "NoReplace" "Eval")
(sdedr:define-analytical-profile-placement "PlaceAP.SourceExt" "Gauss.SourceDrainExt"
"BaseLine.SourceExt" "Positive" "No Replace" "EvaI'")
(sdedr:define-gaussian-profile "Gauss.SourceDrainExt" "ArsenicActiveConcentration" "PeakPos" 0.0
"PeakVal" 5e18 "ValueAtDepth" 1e17 "Depth" 0.035 "Gauss" "Factor" 0.8)
(sdedr:define-analytical-profile-placement "PlaceAP.DrainExt" "Gauss.SourceDrainExt"
"Baseline. Drain Ext" "Eval")
synopsys'
PredictableSucce$$
4/2/2009
79
Defining Mesh Strategies in Regions
(sdedr:define-refinement-
size "RefDef.Epi" 0.1
0.01250.0050.005)
(sdedr:define-refinement-
region "PlaceRF.Epi"
"RefDef.Epi"
''R.Siliconepi'')
(sdedr:define-refinement-
function "RefDef.Epi"
"Doping Concentration"
"MaxTransDiff' 1)
-""""
IIp,,;,,RF . .,,, .

""""""''''''

! o Aef/Wln
1

RogIOn
IR.-""" I


i
0""1"'"
1
Reflf'lementDef.rutlon-.-----------
X Directlon yOirectlon ZOlrcctlon
Max Element Size 10.100000
Min EJementSlze rjooo-,-ooo-- r----
Change P1ac:ement I I Dele:te PIacemerlt I
Defining Mesh Strategies in Refinement
Windows
(sdedr:define-refinement-
window "RefWin.all"
"Rectangle" (position -0.5
1.0 0.0) (position 0.5 -0.2
0.0
(sdedr:define-refinement-
window
"RefWin.Channel"
"Rectangle" (position -0.1
0.00.0) (position 0.1 0.1
0.0
( sdedr:define-refinement-
size "RefDef.all" 0.25 0.1
0.250.1)
(sdedr:define-refinement-
placement "PlaceRF .all"
"RefDef.all" "RefWin.all")
"'.;IA.I I . ,
Placement Name
MaX Bement SIze
Min 8ementS@

""""'="':=' =======::: I
1 j
YOirectlon
1
0250000
r-lo,-ooooo---lo.looooo


Z Direction
,Refrnemenifu'lctiOr'l:l---------------,
i 180"'Wtiv<Conrentntlon : '"'" "1' ---
II __ ...1I=Crit=,ria_ _.L.:I\kruo"'__ __ __'1 : :: :
I a.n,,_, I I ""'I,,,,,,,,",,,,,
4/2/2009
80
Defining a Multibox Mesh Strategy in
Refinement Windows
(sdedr:define-
multibox-size
"MB.Channel"
0.050.01250.025
1e-41 1.35)
(sdedr:define-
multibox-
placement
"PlaceMB.Chann
el" "MB.Channel"
"RefWin.Channel"
)
Build Mesh
Placement Name Llfptace_M_B.O=m __ ' _____
r
p",,""""TYP'
! RefI'Mn ,-, "-""o-.o,-ann-d I
! __
i -,I ______
j X v
"""
1050000
-
1
0
.
01
=
-
1
M;n
1
0
.
025000
"'"
10.000100
"'"
1
Ratio
)1.000000 Ratio 11.350000[
R>.tlo
I

I I =.,p,=",. I I "'."P""""'" I I 00" II
L ....................... --........ -----.--.-... -............ -... -.. -. ".J
synopsys'
Predictable Success
Mesh> Build Mesh.
>-
001
002
0>-
003
004
005
o
0.5
0.5 -0.25 0 0.25 0.5
X
synopsys'
Predictable Success
4/2/2009
81
4/2/2009
Sentaurus Structure Editor
3D Structure
With Online Training Material
~ - - ~ ~ = = = = = = - - ~
synopsys"
Predictable Success
2D 501 M05FET
Draw> Auto Region Naming [off]
Exact Coordinates
Draw> Overlap Behavior> New Replaces Old
Isometric View
Draw> Create 3D Region> Cuboid
(sdegeo:create-cuboid (position -0.25 -0.2 0) (position 0.25 0.2 -1.0) "Silicon" "SubsSilicon")
(sdegeo:create-cuboid (position -0.2 -0.2 0) (position 0.2 -0.1 -0.2) "Oxide"
"T renchOxide _Right")
{sdegeo:create-cuboid (position -0.2 0.1 0) (position 0.2 0.2 -0.2) "Oxide" ''TrenchOxide_Left")
(sdegeo:create-cuboid (position -0.15 -0.2 0) (position 0.15 0.2 0.002) "Oxide" "GateOxide")
(sdegeo:create-cuboid (position -0.1 -0.1 0.002) (position 0.1 0.2 0.1) "PolyS;" "PolyGate")
synopsys'
Predictable Success
82
Changing View
Poly Re-oxidation
Old Replaces New

tOld replaces nOWl
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-cuboid (position -0.103 -0.1030)
(position 0.103 0.2 0.1) "Oxide" "PolyReOxide1 If)
(sdegeo:create-cuboid (position -0.15 -0.103 0)
(position 0.15 0.2 0.005) "Oxide" "PolyReOxide2")
4/2/2009
synopsys'
Predictable Success
synopsys'
Predictable Success
83
Nitride Spacer
(sdegeo:create-cuboid (position -0.15 -0.15 0) (position 0.15 0.2
0.08) "Si3N4" "NiSpacer")
(sde:define-parameter "fillet-radius" 0.03 0.0 0.0 )
(sdegeo:fillet-edges (list (car (find-vertex-id (position -0.15 -0.15
0.08))) (car (find-vertex-id (position 0.15 -0.150.08))) ) fillet-
radius)
synopsys'
Predictable Success
Define Contacts
I ~ It
(sdegeo:define-contact-set "gate" 4.0 (color:rgb 1.00.00.0) "##" )
(sdegeo:define-contact-set "drain" 4.0 (color:rgb 1.00.00.0 ) "II" )
(sdegeo:define-contact-set "source" 4.0 (color:rgb 1.00.00.0) "==" )
(sdegeo:define-contact-set "substrate" 4.0 (color:rgb 1.00.00.0 ) "<><>" )
synopsys'
Predictable Success
4/2/2009
84
Setting Contacts at Existing Faces
i none
gate
drain
source
Contacts> Set Face(s)
I J ~ : < 0'0
, IAPerture Selec(
(sdegeo:set-current-contact-set "substrate")
(sdegeo:set-contact-faces (find-face-id (position 00 -1)) "substrate")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-faces (find-face-id (position 0 0 0.1)) "gate")
synopsys'
Predictable Success
Setting Contacts at New Faces
The corresponding Scheme commands for creating and deleting the
two metal regions are:
(sdegeo:create-cuboid (position 0.17 -0.1 0) (position 0.25 0.1 0.05) "Metal"
"Source")
(sdegeo:create-cuboid (position -0.25 -0.1 0) (position -0.17 0.1 0.05)
"Metal" "Drain")
(sdegeo:delete-region (find-body-id (position 0.22 0 0.025)))
(sdegeo:delete-region (find-body-id (position -0.22 0 0.025)))
The corresponding Scheme commands for placing the source and
drain contacts are:
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-faces (find-face-id (position -0.22 0 0)) "source")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-faces (find-face-id (position 0.220 0)) "drain")
synopsys"
Predictable Success
4/2/2009
85
Defining Constant Doping Levels in a
Region
(sdedr:define-constant-profile
"Const.Bulk"
"BoronActiveConcentration" 1 e17)
(sdedr:define-constant-profile-region
"PlaceCD.Bulk" "Const.Bulk"
"SubsSilicon")
(sdedr:define-constant-profile
"Const.Poly"
"ArsenicActiveConcentration" 1 e20)
(sdedr: define-constant-profile-region
"PlaceCD. Poly" "Const. Poly"
"PolyGate")
I ~
I ~ - ;1
1,-"
Defining Analytic Doping Profiles
Mesh> Define Ref/Eval Window> Rectangle.
(sdedr:define-refinement-window "Baseline. Source" "Rectangle"
(position 0.30 -0.25 0.0) (position 0.15 0.25 0.0) )
(sdedr:define-refinement-window "BaseLine.Drain" "Rectangle"
(position -0.30 -0.25 0.0) (position -0.15 0.25 0.0) )
Device> Analytic Profile Placement
(sdedr:define-gaussian-profile "Gauss.SourceDrain"
"ArsenicActiveConcentration" "PeakPos" 0.0 "PeakVal" 1e19
"ValueAtDepth" 1e17 "Depth" 0.1 "Gauss" "Factor" 0.8)
synopsys'
Predictable U C ~ $ $
(sdedr:define-analytical-profile-placement "PlaceAP.Source"
"Gauss.SourceDrain" "Baseline. Source" "Both" "NoReplace" "Eva I")
(sdedr:define-analytical-profile-placement "PlaceAP.Drain"
"Gauss. SourceD rain" "Baseline. Drain" "Both" "NoReplace" "Eval")
synopsys'
Predictable Success
4/2/2009
86
Defining a Meshing Strategy in a
Window
(sdedr:define-refinement-window
"RefWin.Global" "Cuboid" (position -0.25-
0.2 -0.5) (position 0.25 0.2 0.1))
(sdedr:define-refinement-size
"RefDef.Global" 0.1 0.1 0.1 0.05 0.05 0.05
)
(sdedr:define-refinement-placement
"Place. Global" "RefDef.Global
n
"RefWin.Global" )
(sdedr:define-refinement-window
"RefWin.Active" "Cuboid" (position -0.25 -
0.2 -0.15) (position 0.25 0.2 0.0))
(sdedr:define-refinement-size
"RefDef.Active
n
0.025 0.025 0.025 0.0125
0.01250.0125 )
(sdedr:define-refinement-placement
"Place.Active" "RefDef.Active"
"RefWin.Active")
r:Vtlfiniffffft"f'ITf?WtiiW.-'7
1-- [:-
I
!_o_ c=J l
O/lq>n I '
J Ololal_ I c=J :
I .-------------- ---- ---,
i .... i-- 'I '
!
i---
1---
1 r:==::----;IIv.::---- ..:l-; ..----..---- ...ll.
Il[ ______ .. _________ I!

11--11 1
I .. ________ :J
synopsys'
Predictable Success
Defining a Multibox Mesh Strategy in a
Refinement Window
(sdedr:define-refinement-
window "RefWin.Channel"
"Cuboid" (position -0.12 -0.1 -
0.05) (position 0.12 0.1 0
(sdedr:define-multibox-size
"RefDefMB.Channel" 0.1 0.1
0.01 0.050.050.001 1 1 -1.5
)
(sdedr:define-multibox-
placement
"PlaceMB.Channel"
"RefDefMB. Channel"
"RefWin. Channel" )
t!"ml:>tlrla:Ollrn.1 ;1
synopsys-
Predictable Success
4/2/2009
87
Build Mesh
The corresponding Scheme command is:
(sde:build-mesh "mesh" "-P" "3dmos")
In the TOR format, the Scheme command for the meshing operation is:
(sde:build-mesh "mesh" "-P -F tdr" "soifet_msh")
Note: use SNMESH (doping profile [tdr] can be viewed with option in postprocess)
synopsys'
Predictable Success
synopsys'
Predictable Success
4/2/2009
88
Sprocess simulation by Ligament
Sprocess > properties: select "Use Ligament" option
on the dialog box
Edit Input> Ligament flow: set up a process flow
Ligament Workspace: refer to on-line training material
"Ligament 0.7 Ligament Workspace"
On-line training material provide a detail introduction
in chapter "Ligament"
synopsys'
Predictable-Success
Ligament
Use Ligament to Build up the Device Structure
........... b O ~ O n
synopsys'
Predictable Success
4/2/2009
89
Environment & Substrate
Names
S'-:;::::i'Flow"-

substrate
9--!i" well
Gox
Po!yGate
e-!Ei" LOO
S.pacer
SO
Metal
r!1t- struc
extraccsa ..... _e
title

"e

:.4! nM.OSFET
: boron concen
# 2D nMOSFET save
boron concen
Name : ... __
Stnng__-
l-:-::-(-:l s.ave Boolean
f-{-) grid : Boolean
i-(-) debug . Soolean
H-) Boolean


j--(-) node .. string
H-) sIde : Sjde
}-(-) . Boolean
r-:--<-) depth :"Dlstarlce
1--<-) uSer-9r1d ; GrId
8--(-) gnd_refinement _
.. velf:.
r--<-) Distance
r--(-) tsuprem4_mln_ Distance
Y-:-)
Name

'-(-) concentration
i..-.{-) resistivity
1-{-) orientation
Y-ltype
Type
"O'opa"t
Concentration
Resistivity
Number
Type
Value
iii 20
we
true
false
false
false
sprocess
"0011
'n@oode@
\@node@
front
r3Jse
Un"
5 "um

0.5
'O.S :um
0.1
0.1
Value
boron
1e15
o
100
defautt
/emJ
ohm-em
synopsys'
Predictable Success
Well Implant, Gate Oxide, PolyGate
material


species
time

'iext
'dia-s'

material
'matertaJ
A
.. 20 nMOSFET save.
boron
OXide
""biiro"Tl
boron
boron
_
oxide
.- Gate
10 min
S

poly.
poly
resist
oxide
10 min
conce
thicknes
doss
dose
dose

thicknes

tempe


...
thicknes
ttircknes
thicknes

synopsys'
Predictable Success
4/2/2009
90
LDD, Nitride Spacer, Source/Drain,
Metal Pad
Names
. , .... .. _ .._. ..-.. ..;
AI

f..-B environment title ., 20 nMOSFET save
substrate
well
dopaf'!1 boron concent
13-'}; Gox
e-!.F Po!yGate
LDD
1 text
...
LDD
:-----;}> Insert dlDS spracss
boron dose
implant species tioron . dose
J-- implant specie:s. boron "dose
,
Implant .
1 dlos spraees
arsenic dose
anneal ,time 0.02 sec
Spacer
I. text .
I, deposit material nitride thlCknes
I l--"T etch material nitride thlcknes
1 matedai oxide thicknes
SO
1 -}--c;D comment text SD
1 diDS sproees
I
!mplant species arsenic dose
L_,..6"", anneal time 0.02 sec tempera:
material oxide : 1hlcknes
material aluminum thicknes
f-/;5 rnsert dlos sproc.es
: r--i!, etch matenal aluminum thlcknes
! material resist thicknes
8--!a- struc
extract_save
Environment
Title: 20 nMOSFET 0.18
Simulator: sprocess
Region: 0 0 1 1
Substrate
Dopant: boron
Concentration: 1 e15 Icm3
4/2/2009
synopsys'
Pred lctable SUccess
synopsys'
Predictable Success
91
4/2/2009
Well
Deposit: oxide, 0.01 um
Implant:
Boron, does 2e13/cm2, energy 200 keV
Boron, dose 1e13/cm2, energy 80 keV
Boron, dose 6e12/cm2, energy 25 keV
Anneal: 0.3 sec, 1050 C, 1 atm, Nitrogen 100%
Etch: oxide, strip
synopsys'
Predictable Success
Gate Oxide
Anneal: 5 min, 650-850 C, 1 atm, Nitrogen 100%
Anneal: 10 min, 860 C, 1 atm, Oxygen 100%
Anneal: 5 min, 850-650 C, 1 atm, Nitrogen 100%
Grid Remesh (Insert)
grid remesh
select z=Boron
layers
synopsys'
Predictable Success
92
Poly Gate
Deposit: poly, 0.18 urn
Mask (insert):
mask name=gate_mask left=-0.1 right=\$lgate/2 negative
photo mask=gate_mask thickness=2
Etch: poly, 0.2 urn, anisotropic
Etch: resist, strip
Etch: oxide, 0.1 urn, anisotropic
Anneal: 10 min, 900 C, 1 atm, nitrogen 5 IImin, oxygen 5
IImin
synopsys"
Predictable Success
LDD
Remesh (insert)
refinebox silicon min= {O.O O.S*\$lgate-O.OS} max= {0.06 0.S*\$lgate+0.04}
xrefine= {O.01 0.01 O.01} yrefine= {O.01 0.003 O.01} add
refinebox remesh
transform reflect left
Implant:
boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,
rotation=O
boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,
rotation=90
boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,
rotation=180
boron, Dose=\$HaloDose/4 cm2, energy= \$HaloEnergy keV, tilt=30,
rotation=270
Cut (insert): transform cut location=O.O left
Implant: arsenic, 1 e15 cm2, 20 keV
Anneal: 0.02 s, 1050 C, 1 atm, nitrogen 100%
synopsys'
Predictable Success
4/2/2009
93
Spacer
Deposit: nitride, 60 nm
Etch: nitride, 84 nm, anisotropic
Etch: oxide, 10 nm, anisotropic
Source/Drain
Mesh refine (insert)
refinebox silicon min= {O.O \$lgate/2-0.02} max= {0.22
\$lgate/2+0, 15} yrefine= {0.02 0.01 0.02} add
refinebox remesh
Implant: arsenic, 4e15 Icm2, 30 keV
Anneal: 0.02 s, 1080 C, 1 atm, nitrogen 100%
4/2/2009
synopsys'
Predictable Success
synopsys"
Predictable Success
94
Metal
Etch: oxide, 5 nm, anisotropic
Deposit: aluminium, 30 nm
Mask:
mask name=contacts_mask segments = {-O.1 \$lgate/2-0.005
\$lgate/2+0.1 \$ymax} negative
photo mask=contacts_mask thickness=2
Etch: aluminum, 0.25 um, anisotropic
Etch: resist, strip
synopsys'
Predictable Success
Finalise (insert)
transform clip min= {-1 -1} max= {2 10}
contact name=gate point x=-O.2 y=O.001 replace
contact name=drain point y=\[expr \$ymax - 0.001\] replace
contact name=substrate box silicon xlo=1.5 ylo=O xhi=2.5 yhi=\$ymax
set Ygox oxide /silicon y = 0.001 \]
set Ypol poly /oxide y = 0.001 \]
setYtmp \[expr\$Ygox + 0.005\]
setTox \[expr\$Ygox - \$Ypol\]
sel z = NetActive
set Xgd \[interpolate x = \$Ytmp silicon val=1 e15\]
set Xj \[interpolate y = 0.5"\$lgate+0.39 silicon val=1e15\]
#set Lgeff x
puts \"DOE: Lgeff\[format %.3e \[expr 2.0*\$Xgd\]\]\"
#setXj x
puts \"DOE: Xj \[format %.3e \$Xj\]\"
#setYgox x
puts \"DOE: Ygox \[format %.3e \$Ygox\]\"
#setTox x
puts \"DOE: Tox \[format %.3e \$Tox\]\"
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Predictable Success
cvQVrfWrve: long channel transistor
Accumulation
region:
Good fit indicates
correct oxide
thickness.
Bottom region:
Good fit indicates. that
the channel profile is
correct
Inversion region:
Used to adjust the
doping concentration
in poly-SiJicon.
______________ J

le-14
-2 -1
Threshold voltage:
yDopant concentration at
the gate oxide interface
)- Interface charges
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C-V Device Simulation
Small-signal AC analysis (2007.12 P.183)
AC simulation are performed in mixed mode (2007.12 P.163).
Extract conductance and capacitance of each node, and output
matrix A (conductance) and matrix C (capacitance).
j = Yu = Au + iwCu
j is the vector containing the small-signal currents at all nodes.
u is the corresponding voltage vector.
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C-V Simulation Command File
Device "device1" {
File { "define device input and output file"}
Electrode { "same with IV simulation"}
Physics { "same with IV simulation and tum on minority carrier quantum
}
File
Plot
Math
potential equation for accumulation side CV extraction" }
{ "define system output file"}
{ "same with IV simulation"}
{ "same with IV simulation" }
System { "based on previous device1 and the voltage source of each node
construct a simple circuif' }
Solve { "set bias sweeps sequence, solve transport models and
extract AC parameters" }
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"
- ~
c-v Device Simulation Result
Cgg: gate node capacitor
Ccg: drain node + source node
Cbg: substrate node
Cgg = Ccg + Cbg
1e-013
1e-15
-1
Gate Voltage (V)
~ 5e-014
v
-1 o
Convergence - Breakdown Device Simulation
n-th step converge, next l1 V n+1 > l1 V n
n+1-th step diverge, then l1 V n+1 = l1 V n/2
The voltage step will be divided by 2 again and again,
until it converges or until it reaches a minimum step that
we define in the command file.
10
,_-----VL:
,
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Breakdown Device Simulation
An approach to solve divergent and snapback issues
Introduction please refer to on-line training material "SDevice
section 0.1 MOSFET Breakdown Simulation"
~ ...10S Breakdown
Vd_outer (force)
rl l----,
Drain Voltage (V)
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Breakdown Device Simulation
Modify SDevice command file
Turn on Avalanche and Band2Band model
Solve dual carrier transport
Detail please refer to 90nm nMOS breakdown example.
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Preparation
Copy the 0.18um_nMOS project and rename it as
90nm_nMOS, then clear up all the output files
SProcess uses the -f option to speed up the
simulation time for structure verification
-f option skip diffusion and monte carlo implant step
Refer to SProcess manual 2007.12 P .52
It will cause some parameter extraction failure because
of a missing net doping profile. When we are sure the
device structure is correct, we should remove the -f
option to do a complete simulation.
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Reference: SProcess, pS2
Command-line options
Option
--Fa"n!ode

--pdb

-b
-f
Function
Switcb off graphics.
00 ditru};ton.. n(l rncimpiUlll. and so
Oil.
-11 SwItch off Jot.: creation.
-p Run F"J.t"::U11Ct.:.( Browser 'Showing par:l.mct'ls
,:tfc s>.!'t duriUf: dcia.ult pafatnt.!'tr.:t"'3
and pafamc("'" ffOOl the input 111< if
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Structure Comparison
0.18um nMOS 90nm nMOS
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Process Comparison
0.18um nMOS
WeliNth implant & anneal
Boron dose=2e13 energy=200 till=O rol=O
Boron dose=l e13 energy=80 till=O rol=O
Boron dose=6e12 energy=25 till=O rol=O
diffuse temp=1050 time=0.3<s>
Gox-33A
diffuse temp=650 ramprate=0.6666 time=5
diffuse temp=850 time=10 02 1 atm
diffuse temp=850 ramprate=-O.6666 time=5
POLY height = O.18um
deposit poly type=isotropic thickness=0.18
Halo/LDD implant & anneal
Boron dose=le13 energy=15 till=30 I
roI=0,90,180,270
Arsenic dose=le15 energy=20 tilt=O rol=O
diffuse temp=l 050 time=0.02<s>
90nm nMOS
WeliNth implant & anneal
Boron dose=2e13 energy=200 till=O rot=O
Boron dose=le13 energy=80 till=O rot=o
Boron dose=8e12 energy=30 till=O rol=O
diffuse temp=l 050 time=0.3<s>
Gox-18A
diffuse temp=650 ramprate=0.6666 time=5
diffuse temp=850 time=l 0 02=0.8<l/min> N2=9.2<l/min> 1 atm
diffuse temp=850 ramprate=-O.6666 time=5 ../
POLY height = O.15um
deposit poly type=isotropic thickness=0.15
Halo/LDD implant & anneal
Boron dose=2e13 energy=12 tilt=30 I
rot=d,90,180,270
Arsenic dose=l e15 energy=5 tilt=O rot=o
diffuse temp=l 020 time=0.03<s>
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Predictable Success
Process Comparison
0.18um nMOS
Nitride Spacer
deposit nitride type=isotropic thickness=0.06
etch nitride type=anisotropic thickness=O.084
etch oxide type=anisotropic thickness=O.Ol
Source/Drain implant & anneal
implant Arsenic dose=4e15 energy=30 till=O rot=O
diffuse temp=1080 time=0.02<s>
90nm nMOS
ONO Spacer
deposit oxide type=isotropic thickness=0.005
deposit nitride type=isotropic thickness=0.015
deposit oxide type=isotropic thickness=0.06
diffuse temperature=720 time=20
etch oxide type=anisotropic thickness=0.1
etch nitride type=anisotropic thickness=0.03
etch oxide type=anisotropic thickness=0.015
#- consider native oxide -------
deposit oxide type=isotropic thickness=0.0015
Source/Drain implant & anneal
implant Phosphorus dose=1e15 energy=6 till=O rol=O
implant Arsenic dose=5e15 energy=30 tilt=O rol=O
diffuse temp=l 050 time=0.03<s>
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SProcess Mesh Comparison
0.18um nMOS 90nm nMOS
= = - - - - - - - - ~ ~ - - - - - - - - - - ~
SDevice Mesh Comparison
0.18um nMOS 90nm nMOS
=-=-=c;;-----,,------: _'--1
103
Id_ Vg Curve Comparison
0.18um nMOS
90nm nMOS
Vdd=1.5v; Vds=O.05v
Vdd=1.2v; Vds=O.05v
0.0001
8e-05
E


::!:!

2e-05
0
Hints
O.18um VS. 90nm nMOS IdVg Vds=O.05
.---gm_0.18um
---gm_90nrn
-ld_0.18um
-ld_90nm ;
0.0002
0.00015
00001


0 0.5 1.5
Vg (volt)
(!l
3

<'

c
3

Need to translate the process conditions into correct syntax
of Sprocess.
Poly height has been changed from O.18um to O.15um, need
to update the coordinate of gate contact in Sprocess.
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After finish the modification of Sprocess, whole simulation
flow (Sprocess, SSE, Sdevcie, Inspect) can be executed well.
In Sprocess, fine tune LOO & SO refine-box to get a more
accurate doping profile.
In SSE, fine tune variable "PNres" to optimize the mesh of
LOO and SO junction to get a more accurate Sdevice
simulation result.
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Modify nMOS Template to pMOS
SProcess: change to pMOS process condition
SDE: change PLOY dopant type from N-type to P-type
SDevice
Change majority carrier from electron to hole and related
models. (Exchange e and h in input file in most cases.)\
Biasing Condition
Inspect: change device type and extraction region for
"Extraction library"
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Structure Comparison
90nm nPOS 90nm nMOS
1.....
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Process Comparison
90nm pMOS
WeliNth implant & anneal
Phosphorus dose=2e13 energy=3S0 tilt=O rot=O
Phosphorus dose=1 e13 energy=200 tilt=O rot=O
Arsenic dose=4e12 energy=100 tilt=O rot=o
diffuse temp=1 OSO time=0.3<s>
Halo/LDD implant & anneal
Arsenic dose=2e13 energy=80 tilt=30 I
rot=O,90,180,270
BF2 dose=6e14 energy=3 tilt=O rot=o
diffuse temp=1 020 time=0.03<s>
Source/Drain implant & anneal
implant Boron dose=1e1S energy=3 tilt=O rot=O
implant Boron dose=Se13 energy=6 tilt=O rot=O
diffuse temperature=10S0<C> time=0.03<s>
90nm nMOS
WeliNth implant & anneal
Boron dose=2e13 energy=200 tilt=O rot=O
Boron dose=1 e13 energy=80 tilt=O rot=o
Boron dose=8e12 energy=30 tilt=O rot=O
diffuse temp=1 OSO time=0.3<s>
Halo/LDD implant & anneal
Boron dose=2e13 energy=12 tilt=30 I
rot=O,90,180,270
Arsenicdose=1e15 energy=5 tilt=O rot=O
diffuse temp=1020 time=0.03<s>
Source/Drain implant & anneal
implant Phosphorus dose=1e15 energy=6 tilt=O rot=O
implant Arsenic dose=5e15 energy=30 tilt=O rot=O
diffuse temp=1050 time=0.03<s>
Structure Extraction Source/Drain implant & anneal
set Xgd Dnterpolate x = $Ytmp silicon val=-1e15] set Xgd Dnterpolate x = $Ytmp silicon val=1e15]
set Xj [interpolate y = 0.5*$lgate+0.39 silicon val=-1e15] setXj Dnterpolate y = 0.5*$lgate+0.39 silicon val=1e15]
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Other Parameters
90nm pMOS
Poly Doping
(sdedr:define-constant-profile "Const.Gate"
"BoronActiveConcentration" PolyDop )
Biasing
Goal { Name="drain" Voltage=-@Vds@ }
Goal { Name="gate" Voltage=-@Vdd@ }
Coupling
Coupled { Poisson Hole hQuantumPotential }
Inspect
90nm nMOS
Poly Doping
(sdedr:define-constant-profile "Const.Gate"
"BoronActiveConcentration" PolyDop )
Biasing
Goal { Name="drain" Voltage=@Vds@ }
Goal { Name="gate" Voltage=@Vdd@ }
Coupling
Coupled { Poisson Electron eQuantumPotential }
Inspect
setT ype pMOS
set SS [ExtractSS SS
set Type nMOS
IdVg($N) [expr $Vti+O.0511 set SS [ExtractSS SS IdVg($N) [expr $Vti-O.0511
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4/2/2009
Outline
How to register a SolvNet account?
What kind of TCAD resources we can find on SolvNet?
Software,
Manual
Release Notes
TCAD Example updates
synopsys'
Predictable Success
SolvNet Website http://solvnet.synopsys.com/
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Wek:o.me To Syn0:p-sysSlg" In
.... ... .. )u<>-. _ .. , '.r";;

I L
Apply an account firstly
Login
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SolvNet Register
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New User Registration
SolvNet Register
O::.rl;- 6 ;.$ .....":1' ;-
-.-...-
New User Registration
FlrstNllm.l
,I, .. ... ,..,,;;;'tr-.t ...... , ro ...l';l' .',r,"; ::,rr.n.;: 'h ...
.. <--f;" ;-;r,. ...,.--.<; .1 r.,-,nn :-.-ro .:.. -. ;e':''!::r
:l-., ...,.:j . .,->, /:-;",ns" .. .,..>. fl' .l J;:r",--m,,,-.c>
4/2/2009
synopsys'
Predictable Success
.. :'k,""" ,,,,,,"",f<. t ... ,"-7-.....
C' . ":-:,;,:::,.,,. .::f .. "n
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SolvNet Register
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New Use,. Registration
Important: Please Read Before Registering
i
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serdees include .
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SolvNet HomePage
search TCAD documents by keyword
ViHATS Nfj."'1 ON SOLVNH
c"",: ,-, ;" .' r-a,><,';-'>
Soh-Net Do'hnlo.ad Center f<:!atur,:-s a
redeslqned that dispLays the
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> VI."!"" ST AR<;
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> ttv Product!>
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Untitled
We will be conducting a TCAD Sentaurus product tralnlng in our office on the 8th and
9th of April in our synopsys singapore training center:
300 Beach Road, #31-06, The concourse, singapore 199555.
The agenda are as follows:
Title: Sentaurus TCAD Training for CMOS Application
Day 1:
Day 2:
Sentaurus TCAD Overview
Sentaurus workbench
Sentaurus Process 1D & 2D
Tecplot SV
Sentaurus Structure Editor - Building Meshes
Sentaurus Device I-V simulation
Inspect
90nm nMOSFET Exercise
c-v Device Simulation
Breakdown Device Simulation
pMOSFET Device Simulation
Ligament Introduction
SolvNet Resources
. - - - - - - - - - - - - - - - - - - ~ - ~ ~ - - - . -
t iC
a
t
7i
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.-
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