HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL

20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs

March 2004

Features
Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ = 175oC Ignition Energy Capable

Packages
JEDEC TO-220AB
E C G

COLLECTOR (FLANGE)

JEDEC TO-263AB

Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING PART NUMBER HGTP20N36G3VL HGT1S20N36G3VL HGT1S20N36G3VLS PACKAGE TO-220AB TO-262AA TO-263AB BRAND 20N36GVL 20N36GVL 20N36GVL
COLLECTOR (FLANGE) G E COLLECTOR (FLANGE)

JEDEC TO-262AA
E C G

Symbol
COLLECTOR

The development type number for this device is TA49296.

R1 GATE R2

EMITTER

Absolute Maximum Ratings

TC = +25oC, Unless Otherwise Specified HGTP20N36G3VL HGT1S20N36G3VL HGT1S20N36G3VLS 395 28 37.7 26 10 21 16 500 150 1.0 -40 to +175 260 6

Collector-Emitter Bkdn Voltage At 10mA, RGE = 1k . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100 Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +150oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Electrostatic Voltage at 100pF, 1500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD NOTE: May be exceeded if IGEM is limited to 10mA.
2004 Fairchild Semiconductor Corporation

UNITS V V A A V A A mJ W W/oC o C o C KV

HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1

Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS

Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage SYMBOL BVCES TEST CONDITIONS IC = 10mA, VGE = 0V TC = +175oC TC = +25oC TC = -40oC Collector-Emitter Breakdown Voltage BVCER IC = 10mA VGE = 0V RGE = 1k TC = +175oC TC = +25oC TC = -40oC Gate-Emitter Plateau Voltage VGEP IC = 10A VCE = 12V IC = 10A VGE = 5V VCE = 12V IC = 10A RG = 1K IC = 10mA VCE = 250V VCE = 250V Emitter-Collector Leakage Current Collector-Emitter Saturation Voltage IECS VCE(SAT) VEC = 24V IC = 10A VGE = 4.5V TC = +25oC TC = +25oC MIN 345 355 355 320 335 335 TYP 380 385 390 360 365 370 3.7 MAX 415 415 425 395 395 410 UNITS V V V V V V V

Gate Charge

QG(ON)

28.7

nC

Collector-Emitter Clamp Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current

BVCE(CL)

TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +25oC

330

360

415

BVECS ICES

28 1.1

36 1.3 1.25 1.6 1.9 1.6

5 250 1.0 1.6 1.5 1.9 2.4 2.3

V
A A

mA V V V V V

IC = 20A VGE = 5.0V

Gate-Emitter Threshold Voltage

VGE(TH)

IC = 1mA VCE = VGE

Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load

R1 R2 IGES BVGES tD(OFF)I + tF(OFF)I VGE = 10V IGES = 2mA

10
330 12

75 20
500 14

30
1000

k
A

30

V
s

IC = 10A, RG = 25, L = 550H, RL = 26.4, VGE = 5V, VCL = 300V, TC = +175oC L = 2.3mH, VG = 5V, RG = 1K TC = +150oC TC = +25oC

15

Inductive Use Test

ISCIS

16 21 -

1.0
o

A A C/W

Thermal Resistance

RJC

2004 Fairchild Semiconductor Corporation

HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1

Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Typical Performance Curves

ICE, COLLECTOR to EMITTER CURRENT (A) 50 PULSE DURATION = 250s, DUTY CYCLE <0.5%, VCE = 10V 40 ICE, COLLECTOR to EMITTER CURRENT (A) 100 VGE = 10V 80 5.0V 60 4.5V 40 4.0V 3.5V 20 PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = +25oC 0 0 2 4 6 8 10 VCE, COLLECTOR to EMITTER VOLTAGE (V) 7V

30 TC = 175oC 20 TC = 25oC

10 TC = -40oC 0 1 2 3 4 5 6 VGE, GATE to EMITTER VOLTAGE (V)

FIGURE 1. TRANSFER CHARACTERISTICS

FIGURE 2. SATURATION CHARACTERISTICS

ICE , COLLECTOR to EMITTER CURRENT (A)

ICE , COLLECTOR to EMITTER CURRENT (A)

40

TC = 175oC VGE = 5.0V

50 VGE = 4.5V 40 -40oC 25oC

30 VGE = 4.5V 20 VGE = 4.0V

30

175oC

20

10

10

0 0 2 3 VCE(SAT) , SATURATION VOLTAGE (V) 1 4

0 0 1 2 3 4 5 VCE(SAT) , SATURATION VOLTAGE (V)

FIGURE 3. COLLECTOR to EMITTER CURRENT vs SATURATION VOLTAGE

FIGURE 4. COLLECTOR to EMITTER CURRENT vs SATURATION VOLTAGE

1.4 VCE(SAT) , SATURATION VOLTAGE (V)

2.2 VCE(SAT) , SATURATION VOLTAGE (V) ICE = 10A ICE = 20A 2.1 2.0 1.9 1.8 1.7 1.6 1.5 -25 25 75 125 175 -25 25 75 125 175 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) VGE = 4.5V 5.0V VGE = 4.5V VGE = 4.0V

VGE = 4.0V 1.3 VGE = 4.5V

1.2

VGE = 5.0V

1.1

FIGURE 5. SATURATION VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 6. SATURATION VOLTAGE vs JUNCTION TEMPERATURE

2004 Fairchild Semiconductor Corporation

HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1

Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Typical Performance Curves (Continued)

VTH, NORMAILZED THRESHOLD VOLTAGE (V) ICE, COLLECTOR-EMITTER CURRENT (A) 40 VGE = 5.0V 30 1.2 ICE = 1mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -25 25 75 125 175 TJ , JUNCTION TEMPERATURE (oC)

20

10

0 25

50

75

100

125

150

175

TC, CASE TEMPERATURE (oC)

FIGURE 7. COLLECTOR-EMITTER CURRENT vs CASE TEMPERATURE

FIGURE 8. NORMALIZED THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE

105 104 VECS = 20V 10

3

18

VCL= 300V, RGE = 25, VGE = 5V, L= 550H

t(OFF)I, TURN OFF TIME (s)

LEAKAGE CURRENT (A)

16 ICE = 6A, RL= 50 14 ICE =10A, RL= 30 12

102 101 VCES = 250V 100 10-1 25

10 50 75 100 125 150 175 25 50 TJ , JUNCTION TEMPERATURE (oC)

ICE =15A, RL= 20 75 100 125 150 175

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 9. LEAKAGE CURRENT vs JUNCTION TEMPERATURE

60 VGE = 5V, RG = 1K, VDD = 14V 50 EAS , ENERGY (mJ) 500

FIGURE 10. TURN-OFF TIME vs JUNCTION TEMPERATURE

ICE , COLLECTOR-EMITTER CURRENT (A)

500 VGE = 5V, RG = 1K, VDD = 14V

+25oC 400

40 30 +25oC 20 +150oC 10

300 +150oC 200

100

0 0 2 4 6 8 10 INDUCTANCE (mH)

2 3 INDUCTANCE (mH)

FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs INDUCTANCE

2004 Fairchild Semiconductor Corporation

FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY vs INDUCTANCE

HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1

Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Typical Performance Curves (Continued)

ICE , COLLECTOR-EMITTER CURRENT (A) 60 50 40 30 +25oC 20 10 0 0 50 100 150 200 250 300 350 400
tCLP, TIME IN CLAMP (S)

1600 FREQUENCY = 1MHz 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 CRES 0 0 5 20 10 15 VCE , COLLECTOR-TO-EMITTER VOLTAGE (V) 25 COES CIES

+150 C

FIGURE 13. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs TIME IN CLAMP

12 IG REF = 1.022mA, RL = 1.2, TC = +25oC 10 VCE = 12V 8 4 3 VCE = 8V VCE = 4V 5 VGE, GATE-EMITTER VOLTAGE (V) 6

FIGURE 14. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE

VCE, COLLECTOR-EMITTER VOLTAGE (V)

ZJC , NORMALIZED THERMAL RESPONSE

100 0.5 0.2 PD 10-1 0.1 0.05 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC t2 t1

6 4

2 1

10-2 10-5

SINGLE PULSE 10-4 10-3 10-2 10-1 100 101

0 0 10

20 QG, GATE CHARGE (nC)

30

40

t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 13. GATE CHARGE

FIGURE 14. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE

350 ICER = 10mA BVCER , COLLECTOR-EMITTER BREAKDOWN VOLTAGE (V)

345

TC = 25oC AND 175oC 340

335 0 2 4 6 8 10 RGE , GATE-TO-EMITTER RESISTANCE (K)

FIGURE 15.BREAKDOWN VOLTAGE vs GATE EMITTER RESISTANCE

2004 Fairchild Semiconductor Corporation

HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1

Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Test Circuits

RL 2.3mH VDD C 1/RG = 1/RGEN + 1/RGE RGEN = 50 10V E RGE = 50 E G DUT + L = 550H

C RGEN = 25 5V RG DUT G

VCC 300V

FIGURE 16. USE TEST CIRCUIT

FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT

2004 Fairchild Semiconductor Corporation

HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1

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First Production

No Identification Needed

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Rev. I9