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BTA/BTB12 and T12 Series

12A TRIACS

SNUBBERLESS, LOGIC LEVEL & STANDARD

MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 12 600 and 800 10 to 50 Unit A V mA
A1 A2 G
G

A2

A1

A2

DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) Parameter RMS on-state current (full sine wave)

D2PAK (T12-G)
A2

A1 A2 G

A1 A2 G

TO-220AB Insulated (BTA12)

TO-220AB (BTB12)

Value Tc = 105C 12 Tc = 90C t = 20 ms t = 16.7 ms 120 126 78 Tj = 125C Tj = 25C Tj = 125C Tj = 125C 50 VDRM/VRRM
+ 100

Unit A A

DPAK/TO-220AB TO-220AB Ins.

ITSM

Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns

F = 50 Hz F = 60 Hz

I t dI/dt

tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 s

A s A/s V A W C 1/7

VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range

4 1 - 40 to + 150 - 40 to + 125

April 2002 - Ed: 5A

BTA/BTB12 and T12 Series


ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
s

SNUBBERLESS and LOGIC LEVEL (3 Quadrants)


Symbol Test Conditions Quadrant T12 T1235 IGT (1) VGT VGD IH (2) IL dV/dt (2) (dI/dt)c (2) VD = 12 V RL = 30 I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. I - III II VD = 67 %VDRM gate open Tj = 125C (dV/dt)c = 0.1 V/s (dV/dt)c = 10 V/s Without snubber Tj = 125C Tj = 125C Tj = 125C MIN. MIN. MAX. 35 50 60 500 6.5 15 25 30 40 6.5 2.9 35 SW 10 1.3 0.2 35 50 60 500 6.5 50 70 80 1000 12 V/s A/ms BTA/BTB12 CW 35 BW 50 mA V V mA mA Unit

VD = VDRM RL = 3.3 k Tj = 125C IT = 100 mA IG = 1.2 IGT

STANDARD (4 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB12 C IGT (1) VD = 12 V VGT VGD IH (2) IL dV/dt (2) VD = VDRM RL = 3.3 k Tj = 125C IT = 500 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125C Tj = 125C I - III - IV II MIN. MIN. (dV/dt)c (2) (dI/dt)c = 5.3 A/ms RL = 30 I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 50 100 400 10 V/s V/s B 50 100 mA V V mA mA Unit

STATIC CHARACTERISTICS
Symbol VT (2) Vto (2) Rd (2) IDRM IRRM
Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1

Test Conditions ITM = 17 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX.

Value 1.55 0.85 35 5 1

Unit V V m A mA

Threshold voltage Dynamic resistance VDRM = VRRM

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BTA/BTB12 and T12 Series


THERMAL RESISTANCES
Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Parameter DPAK/TO-220AB TO-220AB Insulated Junction to ambient S=1 cm DPAK TO-220AB TO-220AB Insulated
S = Copper surface under tab

Value 1.4 2.3 45 60

Unit C/W

C/W

PRODUCT SELECTOR
Voltage (xxx) Part Number 600 V BTA/BTB12-xxxB BTA/BTB12-xxxBW BTA/BTB12-xxxC BTA/BTB12-xxxCW BTA/BTB12-xxxSW T1235-xxxG
BTB: non insulated TO-220AB package

Sensitivity 800 V X X X X X X 50 mA 50 mA 25 mA 35 mA 10 mA 35 mA X X X X X X

Type Standard Snubberless Standard Snubberless Logic level Snubberless

Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB DPAK

ORDERING INFORMATION

BT A 12 TRIAC SERIES INSULATION: A: insulated B: non insulated CURRENT: 12A

600

BW

(RG)
PACKING MODE Blank: Bulk RG: Tube

VOLTAGE: 600: 600V 800: 800V

SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS SW: 10mA LOGIC LEVEL

T 12 35
TRIAC SERIES CURRENT: 12A

600 G
PACKAGE: G: D2PAK

(-TR)

VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 35: 35mA

PACKING MODE: Blank: Tube -TR: Tape & Reel

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BTA/BTB12 and T12 Series


OTHER INFORMATION
Part Number BTA/BTB12-xxxyz BTA/BTB12-xxxyzRG T1235-xxxG T1235-xxxG-TR Marking BTA/BTB12-xxxyz BTA/BTB12-xxxyz T1235xxxG T1235xxxG Weight 2.3 g 2.3 g 1.5 g 1.5 g Base quantity 250 50 50 1000 Packing mode Bulk Tube Tube Tape & reel

Note: xxx = voltage, yy = sensitivity, z = type

Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).
P (W) 16 14 12 10 8 6 4 2 0 0 1 2 3 4
IT(RMS)(A)

Fig. 2-1: RMS on-state current versus case temperature (full cycle).
IT(RMS) (A) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
BTB/T12

BTA

Tc(C)

10 11 12

25

50

75

100

125

Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35m),full cycle.
IT(RMS) (A) 3.5 3.0 2.5 2.0
D2PAK (S=1cm2)

Fig. 3: Relative variation of thermal impedance versus pulse duration.

K=[Zth/Rth] 1E+0
Zth(j-c)

1E-1

Zth(j-a)

1.5 1.0 0.5 0.0 0 25 Tamb(C) 50 75 100 125


1E-2 1E-3 1E-2 1E-1

tp(s)
1E+0 1E+1 1E+2 5E+2

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BTA/BTB12 and T12 Series

Fig. 4: values).
ITM (A) 100

On-state characteristics (maximum

Fig. 5: Surge peak on-state current versus number of cycles.


ITSM (A) 130 120 110 100 90 80 70 60 50 40 30 20 10 0

t=20ms

Tj max

Non repetitive Tj initial=25C

One cycle

10
Tj=25C Tj max. Vto = 0.85 V Rd = 35 m

Repetitive Tc=90C

VTM(V)

Number of cycles

1 0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

10

100

1000

Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of It.
ITSM (A), It (As) 1000
dI/dt limitation: 50A/s Tj initial=25C

Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C] 2.5 2.0
IGT

ITSM

1.5
100
It

IH & IL

1.0 0.5
Tj(C)

tp (ms) 10 0.01 0.10 1.00 10.00

0.0 -40

-20

20

40

60

80

100

120

140

Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.8 2.4 2.0
C SW

Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3

1.6 1.2 0.8 0.4

B BW/CW/T1235

2
(dV/dt)c (V/s)

1
100.0

Tj (C) 0 25 50 75 100 125

0.0 0.1

1.0

10.0

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BTA/BTB12 and T12 Series

Fig. 10: DPAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 m).
Rth(j-a) (C/W) 80
DPAK

70 60 50 40 30 20 10 0 0 4 8 12 16 S(cm) 20 24 28 32 36 40

PACKAGE MECHANICAL DATA DPAK (Plastic)


DIMENSIONS
A E L2 C2

REF.

Millimeters Min. Typ. Max. 4.60 2.69 0.23 0.93 Min.

Inches Typ. Max.

D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R

A A1 A2 B B2 C C2 D E G L L2 L3 R V2

4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0

1.40

0.40

0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8 0 8

FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic)


16.90

10.30 1.30

5.08

3.70 8.90

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BTA/BTB12 and T12 Series


PACKAGE MECHANICAL DATA TO-220AB / TO-220AB Ins.
DIMENSIONS
B C

REF.

Millimeters Min. Typ. Max. Min.

Inches Typ. Max. 0.625

b2

L F I A

l4

a1

c2

l3
l2 a2

b1 e

M c1

A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M

15.20

15.90 0.598

3.75 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

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